JPS6274350U - - Google Patents
Info
- Publication number
- JPS6274350U JPS6274350U JP16741185U JP16741185U JPS6274350U JP S6274350 U JPS6274350 U JP S6274350U JP 16741185 U JP16741185 U JP 16741185U JP 16741185 U JP16741185 U JP 16741185U JP S6274350 U JPS6274350 U JP S6274350U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photodiode
- diffusion
- impurity
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Description
第１図は本考案光半導体装置の第１実施例の構
成を示す平面図、第２図はその要部拡大断面図、
第３図は本考案光半導体装置の第２実施例の構成
を示す平面図、第４図は本考案光半導体装置の第
３実施例の構成を示す平面図、第５図はその要部
拡大断面図である。
１……シリコン基板、２……フオトダイオード
、３……不感帯、４……拡散キヤリヤ吸収帯、５
……Ｐ形拡散層、６……電極、７……シリコン酸
化膜、８……Ｎ＋層、９……Ｐ形拡散層、１０…
…短絡用Ｎ＋層拡散層、１１……電極、１２……
Ｎ＋拡散層、１３……電極。
FIG. 1 is a plan view showing the configuration of the first embodiment of the optical semiconductor device of the present invention, FIG. 2 is an enlarged cross-sectional view of the main part thereof,
FIG. 3 is a plan view showing the configuration of the second embodiment of the optical semiconductor device of the present invention, FIG. 4 is a plan view showing the configuration of the third embodiment of the optical semiconductor device of the present invention, and FIG. 5 is an enlarged view of the main parts. FIG. 1...Silicon substrate, 2...Photodiode, 3...Dead zone, 4...Diffused carrier absorption band, 5
... P type diffusion layer, 6 ... Electrode, 7 ... Silicon oxide film, 8 ... N + layer, 9 ... P type diffusion layer, 10 ...
...N + layer diffusion layer for short circuit, 11...electrode, 12...
N + diffusion layer, 13...electrode.
Claims (1)
対の導電型を形成する不純物を選択的に拡散して
フオトダイオードを形成してなる光半導体装置に
おいて、 上記フオトダイオードを構成する拡散面の近傍
に、上記不純物と同型の不純物を選択的に拡散す
ると共に、形成される拡散面と上記半導体基板と
を短絡してなる拡散キヤリヤ吸収帯を設けて、同
一基板の他の領域からフオトダイオードへの拡散
キヤリヤ流れ込みを減少する構成としたことを特
徴とする光半導体装置。 (2) 上記フオトダイオードを構成する拡散面の
近傍に、上記基板と同型の不純物を高濃度に選択
拡散した部分を設け、この高濃度拡散部と、上記
拡散キヤリヤ吸収帯とを電極で接続して、該拡散
キヤリヤ吸収帯と基板とを短絡してなる実用新案
登録請求の範囲第１項記載の光半導体装置。[Claims for Utility Model Registration] (1) In an optical semiconductor device in which a photodiode is formed by selectively diffusing an impurity that forms a conductivity type opposite to that of the substrate into a suitable location of a semiconductor substrate, In the vicinity of the diffusion surface constituting the photodiode, an impurity of the same type as the above impurity is selectively diffused, and a diffusion carrier absorption band formed by short-circuiting the formed diffusion surface and the semiconductor substrate is provided. An optical semiconductor device characterized in that the device is configured to reduce the flow of diffused carriers from other regions of the substrate into the photodiode. (2) A region in which an impurity of the same type as the substrate is selectively diffused at a high concentration is provided near the diffusion surface constituting the photodiode, and this high concentration diffusion region and the diffusion carrier absorption band are connected by an electrode. The optical semiconductor device according to claim 1, wherein the diffused carrier absorption band and the substrate are short-circuited.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16741185U JPS6274350U (en) | 1985-10-30 | 1985-10-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16741185U JPS6274350U (en) | 1985-10-30 | 1985-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6274350U true JPS6274350U (en) | 1987-05-13 |
Family
ID=31099313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16741185U Pending JPS6274350U (en) | 1985-10-30 | 1985-10-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6274350U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06350122A (en) * | 1993-06-08 | 1994-12-22 | Hamamatsu Photonics Kk | Semiconductor light detecting element |
| JP2011159984A (en) * | 2003-10-20 | 2011-08-18 | Hamamatsu Photonics Kk | Semiconductor photodetecting element and radiation detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140790A (en) * | 1974-10-04 | 1976-04-05 | Oki Electric Ind Co Ltd | |
| JPS552113B2 (en) * | 1975-03-01 | 1980-01-18 | ||
| JPS5730348A (en) * | 1980-07-03 | 1982-02-18 | Ibm | Method of forming mutual connection wire |
-
1985
- 1985-10-30 JP JP16741185U patent/JPS6274350U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140790A (en) * | 1974-10-04 | 1976-04-05 | Oki Electric Ind Co Ltd | |
| JPS552113B2 (en) * | 1975-03-01 | 1980-01-18 | ||
| JPS5730348A (en) * | 1980-07-03 | 1982-02-18 | Ibm | Method of forming mutual connection wire |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06350122A (en) * | 1993-06-08 | 1994-12-22 | Hamamatsu Photonics Kk | Semiconductor light detecting element |
| JP2011159984A (en) * | 2003-10-20 | 2011-08-18 | Hamamatsu Photonics Kk | Semiconductor photodetecting element and radiation detector |
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