JPS6273261A - Production of photomask - Google Patents
Production of photomaskInfo
- Publication number
- JPS6273261A JPS6273261A JP60213467A JP21346785A JPS6273261A JP S6273261 A JPS6273261 A JP S6273261A JP 60213467 A JP60213467 A JP 60213467A JP 21346785 A JP21346785 A JP 21346785A JP S6273261 A JPS6273261 A JP S6273261A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photomask
- resist
- film
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
、〔産業上の利用分野〕
本発明は、ガラス基板等の透光性基板とその透光性基板
トに被着（）ｔこ遮光性膜とがらｈるフォトマスク基板
の辿）Ｙ、ｆ’ｌ膜を、［ツヂングしてパターンを形成
ηる）Ａ１〜マスクの製造方法に関り−る。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a photomask substrate comprising a light-transmitting substrate such as a glass substrate and a light-shielding film deposited on the light-transmitting substrate. 1) A1 to mask manufacturing method (where the Y and f'l films are formed to form a pattern).
（従来の技術）
従来、フォトマスクの製造り法には、フォトマスク基板
の遮光付膜上に塗布したレジストを露光・現像して、遮
光性膜−１−に残存レジス］へパターンを形成し、この
フォトマスク基板をリンス処理後、スピン乾燥、ボス１
〜ベーク、エツチング、レジスト剥離の各■稈を順次行
うものがあった。(Prior art) Conventionally, in the manufacturing method of a photomask, a resist coated on a light-shielding film of a photomask substrate is exposed and developed to form a pattern on the resist remaining on the light-shielding film-1-. , After rinsing this photomask substrate, spin drying, boss 1
~There was a method in which baking, etching, and resist stripping were performed sequentially.
すなわち、透光性基板−ににＣｒ膜等の遮光性膜を被着
してフォトマスク基板を製作し、さらに、その遮光性膜
にレジストを塗布してレジスト付ぎフォトマスク基板を
製作し、そのレジストに所定のレジストパターンを潜像
すべく、電子線描画装置等を用いて露光し、次に、遮光
性股上に所定の残存レジストパターンを形成すべく、現
像液により所定時間現像処理し、次に、現像液とは異な
るタイプのリンス液でリンス処理する。その後、このフ
ォ］・マスク基板を高速回転させ、遠心力によりリンス
液を除去するスピン乾燥法によって乾燥し、次に、クリ
ーンオーブンやホットプレート等を用いてポス１−ベー
クすることにより、未乾燥状態にあったリンス液を除去
し、残存レジストパターンとその下の遮光性膜との密着
性を回復している。That is, a photomask substrate is produced by coating a light-shielding film such as a Cr film on a light-transmitting substrate, and a resist-coated photomask substrate is produced by coating the light-shielding film with a resist. In order to form a latent image of a predetermined resist pattern on the resist, the resist is exposed to light using an electron beam drawing device or the like, and then developed with a developer for a predetermined time to form a predetermined residual resist pattern on the light-shielding crotch. Next, rinsing is performed using a rinsing solution different from the developer. After that, this photomask substrate is rotated at high speed and dried by a spin drying method in which the rinsing liquid is removed by centrifugal force, and then post-baked using a clean oven, hot plate, etc. The rinsing liquid that was in the condition is removed, and the adhesion between the remaining resist pattern and the underlying light-shielding film is restored.
次に、遮光↑／Ｉ膜に対応づる■ツー１ング液Ｃ所定時
間エツチングしく、露出している遮光性膜をな刻する。Next, the exposed light-shielding film is etched for a predetermined period of time using tooling liquid C corresponding to the light-shielding ↑/I film.
すると、フォトマスモ
光竹基板十には、残存レジストパターンどその＝１・の
遮光性膜パターンが残る。ざら１Ｊ、レジスト剥離液中
に浸漬して、残存レジストパターンを剥離し、透光＋ｑ
基板十に遮光性膜パターンを形成したフォトマスクを製
造する。Then, a light-shielding film pattern with the remaining resist pattern = 1 remains on the photomass light bamboo substrate 10. Zara 1J, immersed in resist stripping solution, peeled off the remaining resist pattern, transparent +q
A photomask having a light-shielding film pattern formed on a substrate is manufactured.
ところで、蒸気乾燥法は、被乾燥物に付着した水や有機
溶媒等を蒸発潜熱の小さい有機溶媒（例えば、水に対し
−Ｃはイソブ［１ピルアル］−ル（以下、ｒｒＰＡＪと
言う。）、有機溶媒に対（）ではフロン１１３やＩＰＡ
）に蔚換【ノ、その有機溶媒を蒸発させることにより、
被乾燥物を乾燥づるＩＪ法であるが、フォトマスクの製
造方法においては、フォトマスク基板又はフォトマスク
の洗浄−「稈後に使用されていた。By the way, in the steam drying method, water or an organic solvent adhering to the material to be dried is removed using an organic solvent with a small latent heat of evaporation (for example, -C is isobut[1-pyral]-ol (hereinafter referred to as rrPAJ) for water), For organic solvents (), Freon 113 and IPA
) by evaporating the organic solvent,
The IJ method is used to dry the material to be dried, but in the photomask manufacturing method, it was used after cleaning the photomask substrate or photomask.
〔発明が解決しようと１Ｊる問題点）
前述したリンス処理後のフォトマスクＭ＆をスピン乾燥
法で乾燥する場合、残存レジストパターンにＩａ！埃が
イ・１着していると、（−１＠ した塵埃と共に、塵埃
のｆ＞１着した部分及びその近傍の残存レジストパター
ンが高速回転中に振り飛ばされ−（しよう。[Problems to be Solved by the Invention] When drying the photomask M& after the above-mentioned rinsing process using a spin drying method, Ia! If the dust has settled on the surface of the resist pattern, the remaining resist pattern in the area where the dust has adhered (f>1) and its vicinity will be blown off during high-speed rotation, along with the dust that has fallen (-1@).
りるど、“［ツブング、レジスト剥１１１１ Ｌ、た後
、透光祠基＆−１に所定の進光ｆ’ｌ膜パターンが形成
されない、１また、スピン乾燥法では、リンス処理時の
リンス液を完全には除去できず、残存レジストパターン
とその下の遮光性膜との密名゛性を回復すべく、クリー
ンオーブンやホットプレート等を用いてボスｉ・ベーク
する必要があった。Rudo, ``[Tubung, after removing the resist 1111 L, the prescribed light traveling f'l film pattern is not formed on the transparent abrasive base &-1. The liquid could not be completely removed, and it was necessary to perform boss i-baking using a clean oven, hot plate, etc. in order to restore the tightness between the remaining resist pattern and the light-shielding film underneath.
本発明は、以！−の、Ｊ、うな事情を鑑みてなされたも
のであり、前述し！ごリンス処理後の７４］〜マスク基
板の乾燥時に、付着した塵埃と共に、塵埃の付着した部
分及びその近傍の残存レジス］−パターンが振り飛ばさ
れることがなく、かつ、乾燥後、クリーンオーブンやホ
ツ；−プレート等を用いてポストベークリ−る必費の生
じないフォトマスクの製造方法を１１？供することを目
的とＪる。The present invention is as follows! -This was done in consideration of the circumstances mentioned above. 74 after rinsing process] ~During the drying of the mask substrate, along with the dust that adhered, the pattern will not be blown off and the remaining resist in the area where the dust has adhered and its vicinity] - 11. Methods for manufacturing photomasks that do not require post-baking using plates, etc.? The purpose is to provide.
（問題点を解決ψるための手段）
本発明は、１記の目的を達成Ｊるため軒なされたもので
あり、透光↑４Ｍ板十１遮光性膜を被着したフＪ ｌ−
マスク基板の前記遮光性膜上ｋＴレジス１−を塗布１ノ
、前記１ノジス１へを露光・現像ｌノーＣ１前記遮光性
膜Ｆに残存レジス（〜パターンを形成しｌＪ前記フォト
マスク基板をリンス処理後、蒸気乾燥し、次に前記遮光
性膜を］ツチングし、前ｉ１１残存レジストパターンを
剥離ｔ にとを特徴と覆るノーＡｔ−マスクの製造ＩＪ
法である。(Means for solving the problems) The present invention has been made to achieve the object stated in 1 above.
Coat kT resist 1- on the light-shielding film of the mask substrate 1, expose and develop the 1-noise 1; After the treatment, the light-shielding film is steam-dried, and the remaining resist pattern is peeled off.
It is the law.
〔作 用］
本発明においては、前述したリンス処理後のフォトマス
ク基板を熱気乾燥することから、このフォトマスク基板
からリンス液を完全に除去でき、また、残存レジメ１−
パターンとその下の遮光性膜との密着性を回復すること
ができる。[Function] In the present invention, since the photomask substrate after the above-mentioned rinsing process is dried with hot air, the rinsing liquid can be completely removed from the photomask substrate, and the remaining regimen 1-
Adhesion between the pattern and the light-shielding film underneath can be restored.
〔実施例）
先ず、透光性基板（材Ｆｌ二石英ガラス、５×５Ｘ Ｏ
，０９インチ）の一方の４Ｊ表面干に、スパッタリング
法により遮光性膜としてＣｒ膜（光学１１度：３．０．
ＩＪ厚＝９００人）を被着してフォトマスク基板を製
作する。次に、このＣｒ膜土にレジスト（例；東し製ポ
ジ型電子線レジストＦＢＲ−９，膜厚：５０００人）を
塗布してレタスｌ−付ぎフォトマスク基板を製作−リ“
る。[Example] First, a transparent substrate (material Fl diquartz glass, 5×5×O
, 09 inches) was coated with a Cr film (optical 11 degrees: 3.0 inches) as a light-shielding film by sputtering on one 4J surface.
A photomask substrate is manufactured by depositing IJ (IJ thickness = 900). Next, a resist (e.g. positive electron beam resist FBR-9 manufactured by Toshi Co., Ltd., film thickness: 5,000) was applied to this Cr film soil to produce a photomask substrate with lettuce l.
Ru.
次に、このレジスト付ぎフォトマスク基板のレジス１〜
に所定のレジス１〜パターンを潜像Ｊべく、電子線描内
装Ｗ（例；パーキン・■ルマー製ＨＥ８ＥＳ −ｎ［）
を用いて露光し、さらに、露光部分を除去してＣｒ Ｉ
ＩＱ上に所定の残存レジストパターンを形成Ｊべく、現
像液（例；専用現像液）により所定時間（例；１０分）
現像処理し、次に、リンス液（例；ＩＰＡ液）中に浸漬
してリンス処理する。Next, resists 1 to 1 of this resist-attached photomask substrate are
In order to form a latent image of the predetermined registers 1 to 1 on the pattern, apply an electron beam drawn interior W (e.g., Perkin Rumar HE8ES-n[).
Then, the exposed part was removed and CrI
To form a predetermined residual resist pattern on the IQ, use a developer (e.g., dedicated developer) for a predetermined time (e.g., 10 minutes).
The film is developed and then rinsed by immersion in a rinsing solution (eg, IPA solution).
イの後、Ｃｒ１ｌｌ上に所定の残存レジストパターンを
形成したフォトマスク基板を、フロン１１３を収容した
蒸気乾燥装置の槽内（蒸気温度：４４℃）に所定時間（
例：９０秒）浸漬づる。すると、このフォトマスク基板
からリンス液を十分に除去することができ、残存レジス
トパターンとその下のＣｒ膜との密着性を回復すること
ができ、また、乾燥中に塵埃が付着することも防止でき
る。After that, the photomask substrate with a predetermined residual resist pattern formed on the Cr1ll is placed in a tank of a steam drying device containing Freon 113 (steam temperature: 44°C) for a predetermined time (
Example: 90 seconds) Soak. Then, the rinsing liquid can be sufficiently removed from the photomask substrate, and the adhesion between the remaining resist pattern and the underlying Cr film can be restored, and the adhesion of dust during drying can also be prevented. can.
次に、エツチング液（例；硝酸第２セリウムアンモニウ
ムと過塩素酸よりなる混合水溶液）中に所定時間（例；
２５秒）浸漬しＣエツチング【ノ、露出しているＣｒ１
ｌｌを食刻する。Ｊると、透光竹入を板子には、残存レ
ジメ（・パターンとそのＦのＣｒ１ｌＱパターンが残る
。さらｆＪ−、レジスト剥離液（例；ＦＢＲ−９ｓＩ用
剥Ｅ１中に浸漬１〕で残存レジス］・パターンを剥離し
、透光性Ｌ１板子にＣｒ膜パターンを形成したフォトマ
スクを製造４る。Next, it is placed in an etching solution (e.g., a mixed aqueous solution of ceric ammonium nitrate and perchloric acid) for a predetermined period of time (e.g.,
25 seconds) Soaking and C etching [No, exposed Cr1
Engrave ll. When using J, the remaining regimen (pattern and its F Cr1lQ pattern remain.Furthermore, fJ-, resist stripping solution (e.g., immersion in stripper E1 for FBR-9sI) remains. A photomask with a Cr film pattern formed on the light-transmitting L1 plate is manufactured by peeling off the resist pattern.
蒸気乾燥法では、スピン乾燥法のように、リンス処理後
のフォトマスク基板を高速回転さ１４−る必賛がないの
で、イ・１看した塵埃とハに、塵埃の付着した部分及び
その近傍の残存レジス１〜パターンが振り飛ばされるこ
とがなく、エツチング、レジメト剥離した後、所定のＣ
ｒ膜パターンを有４るフォトマスクを製造４ることがで
きる。In the steam drying method, unlike the spin drying method, it is not necessary to rotate the photomask substrate after rinsing at high speed. The remaining resist 1~ pattern is not shaken off, and after etching and peeling off the resist, a predetermined C.
A photomask having an r film pattern can be manufactured.
まＩこ、蒸気乾燥法によれば、リンス処理後のフォトマ
スク基板からリンス液をほぼ完全に除去でき、また、残
存レジストパターンとその下のＣｒ膜どの密着性を回１
ＳｊΦることができるので、クリーンオーブンやボッ１
〜プレー１へ等を用いたポストべ一りが省け、よって、
この■稈に要した時間（３０分）及びボストベーク後の
７Ａ１−マスク基板の冷ＦＪ１時間（２０分）が省（）
る。さらに、ポストベーク中や冷７４１中におけるノオ
］〜マスク基板への冷埃のイ・１肴も防Ｊｔ４ることが
できる。However, according to the vapor drying method, the rinsing liquid can be almost completely removed from the photomask substrate after rinsing treatment, and the adhesion between the remaining resist pattern and the underlying Cr film can be improved once.
Since it can be cleaned in a clean oven or in a
〜Play 1, etc. can be omitted, and therefore,
The time required for this process (30 minutes) and 1 hour (20 minutes) of cold FJ of the 7A1-mask substrate after boost baking are saved ()
Ru. Furthermore, it is possible to prevent cold dust from forming on the mask substrate during post-baking or during cooling.
本発明は、１−記した実施例に限定されるものではない
。透光性基板として、石英ガラス基板の他に、アルミノ
シリケ−１〜、ボ［１シリケート及びソーダライム等の
多成分系ガラス基板でもよいし、その大きさも適宜決定
されうる。The invention is not limited to the embodiments described. In addition to the quartz glass substrate, the light-transmitting substrate may be a multi-component glass substrate such as aluminosilicate-1 to bo[1-silicate and soda lime, and its size may be determined as appropriate.
遮光ｆ’Ｉ Ｎとしｒｃｒ膜の他に、Ｔａ、 Ｎｏ、
Ｎｉ、 Ａ４゜ＮｉＣｒ等のエツチング可能な金属や
、これ等金属の窒化物、炭化物、酸化物、珪化物等の躾
や、これ等二双［−の多層膜でもよく、また、その膜厚
は９００人に限定されず所定の光学濃度に従って適宜決
定されつる。遮光性膜の成膜手段としてスパッタリング
法の他に貞空蒸着法やイオンブレーティング法を用いて
もよい。In addition to light-shielding f'IN and RCR films, Ta, No,
Etchable metals such as Ni, A4゜NiCr, etc., nitrides, carbides, oxides, silicides, etc. of these metals, or multilayer films of these two layers may be used, and the film thickness may vary. It is not limited to 900 people, but can be determined as appropriate according to a predetermined optical density. As a method for forming the light-shielding film, in addition to the sputtering method, an air vapor deposition method or an ion-blating method may be used.
レジス１〜は、ポジ型電子線レジストの他に、ネガ型電
子線しジスｌ〜や、ポジ型及びネガ型フォトレジスト等
であってもよい。また、レジストの厚さは５０００人に
限定されず、適宜決定される。The resists 1~ may be negative type electron beam resists 1~, positive type and negative type photoresists, etc. in addition to positive type electron beam resists. Further, the thickness of the resist is not limited to 5,000, but is determined as appropriate.
露光■稈ｒは、電子線レジストに対しては、電子線描画
装置を用い′Ｃ’ｄＡ子線で露光し！、二が、フォトレ
ジス１〜に対して番、Ｌ遠紫外光や紫外線で露光しても
よい。Exposure ■ For the electron beam resist, expose the culm with a 'C'dA diagonal beam using an electron beam lithography system! , 2 may be exposed to far ultraviolet light or ultraviolet light for the photoresists 1 to 1.
実施例ではリンス処理時のリンス液としてＩＰＡを用い
たが、電子線レジストに対しては、純水あるいはＩＰＡ
以外の有機溶媒をリンス液として用いてもよいし、フォ
（ヘレジス］〜にり・ロノでは、純水をリンス液として
用いる。In the example, IPA was used as the rinsing liquid during the rinsing process, but for electron beam resist, pure water or IPA was used.
Organic solvents other than those mentioned above may be used as the rinsing liquid, and pure water is used as the rinsing liquid in Fo (heregis) to Niri/Rono.
蒸気乾燥では、実施例のフ［１ン１１３の代わりにリン
ス液と同様１Ｆ〕Ａを用いてもよく、リンス液として純
水を用いた場合にはＩＰＡを、リンス液としてＩＰＡ以
外の有機溶媒を用いた場合にはフロン１１３又はＩＰＡ
をそれぞれ用いてもよい。それらの蒸気湯度及び処理時
間し適宜決定されつる。In the steam drying, 1F]A may be used in place of the rinsing liquid in place of F[1F]A in the example, and if pure water is used as the rinsing liquid, IPA may be used, and an organic solvent other than IPA may be used as the rinsing liquid. When using Freon 113 or IPA
may be used respectively. The steam temperature and processing time are determined as appropriate.
エツチング方法は、浸漬法等の湿式１ツチングの他に、
ガスプラズマ１ツブングやスパッタエツチング等の乾式
エツチングであってもよい。In addition to wet etching methods such as dipping, etching methods include
Dry etching such as gas plasma etching or sputter etching may be used.
本発明によれば、付着した塵埃と共に、塵埃の６１着し
た部分及びその近傍の残存レジストパターンが振り飛ば
されることがなく、また、乾燥中に塵埃が付着しないの
で、所定の遮光性膜パターンを有するフォトマスクを製
造できる。さらに、クリーンオーブンやホットプレート
等を用いたポストベークが省ｔＪるので、ポストベーク
中に塵埃の付着を防止することができ、また、製造時間
も大幅に短縮される。According to the present invention, the residual resist pattern in the part where the dust has adhered and the vicinity thereof is not blown away together with the dust, and since the dust does not adhere during drying, the predetermined light-shielding film pattern can be It is possible to manufacture a photomask having the following characteristics. Furthermore, since post-baking using a clean oven, hot plate, etc. can be omitted, it is possible to prevent dust from adhering to the product during post-baking, and the manufacturing time can also be significantly shortened.
Claims (1)
基板の前記遮光性膜上にレジストを塗布し、前記レジス
トを露光・現像して、前記遮光性膜上に残存レジストパ
ターンを形成した前記フォトマスク基板をリンス処理後
、蒸気乾燥し、次に前記遮光性膜をエッチングし、前記
残存レジストパターンを剥離することを特徴とするフォ
トマスクの製造方法。(1) A resist is applied onto the light-shielding film of a photomask substrate in which a light-shielding film is coated on a light-transmitting substrate, and the resist is exposed and developed to form a residual resist pattern on the light-shielding film. A method for manufacturing a photomask, comprising rinsing the formed photomask substrate, drying it with steam, etching the light-shielding film, and peeling off the remaining resist pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60213467A JPS6273261A (en) | 1985-09-26 | 1985-09-26 | Production of photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60213467A JPS6273261A (en) | 1985-09-26 | 1985-09-26 | Production of photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6273261A true JPS6273261A (en) | 1987-04-03 |
Family
ID=16639685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60213467A Pending JPS6273261A (en) | 1985-09-26 | 1985-09-26 | Production of photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6273261A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5433113A (en) * | 1993-05-12 | 1995-07-18 | Hitachi Metals Ltd. | Probe and apparatus for detecting defects of cylindrical member with surface ultrasonic wave |
-
1985
- 1985-09-26 JP JP60213467A patent/JPS6273261A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5433113A (en) * | 1993-05-12 | 1995-07-18 | Hitachi Metals Ltd. | Probe and apparatus for detecting defects of cylindrical member with surface ultrasonic wave |
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