JPS6269579A - Semiconductor laser - Google Patents

Semiconductor laser

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Publication number
JPS6269579A
JPS6269579A JP20940185A JP20940185A JPS6269579A JP S6269579 A JPS6269579 A JP S6269579A JP 20940185 A JP20940185 A JP 20940185A JP 20940185 A JP20940185 A JP 20940185A JP S6269579 A JPS6269579 A JP S6269579A
Authority
JP
Japan
Prior art keywords
layer
refractive index
type
substrate
high refractive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20940185A
Other languages
Japanese (ja)
Inventor
Toshitaka Aoyanagi
利隆 青柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20940185A priority Critical patent/JPS6269579A/en
Publication of JPS6269579A publication Critical patent/JPS6269579A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To control a horizontal lateral mode accurately and stably, by controlling the width of a wave guiding groove by the thickness of the growth of a semiconductor layer having a high refractive index. CONSTITUTION:On a substrate 2, multiple thin layers 14 are formed. A horizontal lateral-mode control surface 15 is formed at one end of the layers 14 by etching. Then an N-type lower clad layer 3 is continuously formed from the upper part of the multiple thin layers 14 to the upper part of the substrate 2. On the layer 3, an N-type active layer 4, a P-type upper clad layer 5 and a contact layer 8 are sequentially formed. An N-side electrode 1 is formed on the lower part of the substrate 2. A P-side electrode 9 is formed on the upper part of the horizontal lateral-mode control surface 15. A width W2 of a groove can be controlled by the thickness of the growth of the N-type layer 13 having a high refractive index. When the width W2 of the groove is made sufficiently narrow, the horizontal lateral mode becomes only the basic mode.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、水平横モード制御が可能な半導体Ｖ−ザ装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor V-za device capable of horizontal transverse mode control.

〔従来の技術〕[Conventional technology]

第５図は従来の半導体Ｖ−ザ装置のｌ＃１面ならびに上
側クラッド層上■における等価的屈折率分布を示す図で
、１はｎ側ｔｔ他、２は基板、３はｎ型の下側クラッド
層、４はｎ型の活性層、５はｐ型の上側クラッド層、６
は低屈折率のｎ型層、７は高屈折率のｐ型層、８はｐ型
のコンタクＨＬ９はｐ側電極、１０は前記下側クラッド
層３．活性層４および上側クラッド層５よりなるダブル
へテロ構造、１１はｎ「起上側クラッド層５の上面であ
る水平横モード制御面である。FIG. 5 is a diagram showing the equivalent refractive index distribution on the l#1 plane and the upper cladding layer of a conventional semiconductor V-ther device, where 1 is the n-side tt, etc., 2 is the substrate, and 3 is the n-type bottom. side cladding layer, 4 is an n-type active layer, 5 is a p-type upper cladding layer, 6
7 is a low refractive index n-type layer, 7 is a high refractive index p-type layer, 8 is a p-type contact HL9 is a p-side electrode, and 10 is the lower cladding layer 3. In the double heterostructure consisting of the active layer 4 and the upper cladding layer 5, reference numeral 11 denotes a horizontal transverse mode control surface which is the upper surface of the raised cladding layer 5.

次に動作について説明する。Next, the operation will be explained.

まず、ｐ１１１１電極９から正孔、ｎｇ８電極１から電
子が注入され、各キャリアはダブルへテロ構造１０によ
って活性層４に閉じ込められる。そして、注入キャリア
を増加させると、やがて発振に至る。First, holes are injected from the p1111 electrode 9 and electrons are injected from the ng8 electrode 1, and each carrier is confined in the active layer 4 by the double heterostructure 10. Then, when the number of injected carriers is increased, oscillation eventually occurs.

このとき、活性層４と平行な方向に関しては、低屈折率
のｎ型層６　Ｋ　＠Ｗ　Ｉ　の導波用の溝！形成して高
屈折率のｐ型層７を埋め込むことにより、水平横モード
制御面１１上で同方向の等価的屈折率分布ｎ、を形成し
、元を活性層４中の幅Ｗ、の領域に閉じ込める。同時に
低屈折率のｎｕ層６と上側クラッド層５の接合面には、
逆バイアスか加わり電流が流れないため、キャリアの注
入もＩｌｌ　Ｗ　ｔの領域内に限定される。このように
して、幅ＷＩの領域内にキャリアおよび元を閉じ込める
ことにより、従来はＶ−ザ晃光部の水平横モードを制御
していた。At this time, in the direction parallel to the active layer 4, the waveguide groove of the low refractive index n-type layer 6 K @W I! By forming and embedding the p-type layer 7 with a high refractive index, an equivalent refractive index distribution n in the same direction is formed on the horizontal transverse mode control surface 11, and the original area of the active layer 4 has a width W. to be confined in At the same time, at the joint surface between the low refractive index nu layer 6 and the upper cladding layer 5,
Since a reverse bias is applied and no current flows, carrier injection is also limited to the Ill W t region. Conventionally, the horizontal transverse mode of the V-the optical part was controlled by confining carriers and elements within the region of width WI in this manner.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記のような従来の半導体レーザ装置では、屈折率の低
いｎ型Ｎ１６に幅Ｗ１の導波用の溝を形成し、その上に
高屈折率のｐ型層？’４−埋め込み成長させていたが、
写真製版技術およびエツチング技術上の制約により、溝
の暢Ｗ、Ｙ２μｍ以下にすることができなかった。この
場合、水平横モードを基本モードのみに制御するために
は、高屈折率のｐ型層７と低屈折率のｎ型層６との屈折
率差を極めて小さくする必要があるが、そうした場合高
出力時における導波部分の温度上昇およびキャリア密度
の分布変化により等価的屈折率分布が変化してしまい、
水平横そ一層が不安定になるという問題点があった。In the conventional semiconductor laser device as described above, a waveguide groove having a width W1 is formed in the n-type N16 having a low refractive index, and a p-type layer having a high refractive index is formed on the waveguide groove. '4-I was growing the implant, but
Due to limitations in photolithography and etching technology, it was not possible to make the groove width W and Y less than 2 μm. In this case, in order to control the horizontal transverse mode to only the fundamental mode, it is necessary to make the refractive index difference between the high refractive index p-type layer 7 and the low refractive index n-type layer 6 extremely small. The equivalent refractive index distribution changes due to the temperature rise of the waveguide part and the change in carrier density distribution at high output.
There was a problem that the horizontal and lateral layers became unstable.

この発明は、かかる問題点な解決するためになされたも
ので、正確で安定した水平横モード制御の可能な半導体
Ｖ−ザ装置ｖ得ることを目的とする。The present invention was made to solve these problems, and an object of the present invention is to provide a semiconductor V-za device capable of accurate and stable horizontal transverse mode control.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体レーザ装置は、少なくとも二層の
低屈折率の半導体層にはさまれた少なくとも一層の高屈
折率の半導体層からなる基板上の一部に形成した多層薄
膜層と、この多ｊ−薄膜層上より基板上まで連続して形
成した下側クラッド層と、この下側クラッド層上に形成
した活性層と、この活性層上に形成した上側クラッド層
とを備えたものである。A semiconductor laser device according to the present invention includes a multilayer thin film layer formed on a part of a substrate consisting of at least one high refractive index semiconductor layer sandwiched between at least two low refractive index semiconductor layers; J-It is equipped with a lower cladding layer formed continuously from above the thin film layer to above the substrate, an active layer formed on this lower cladding layer, and an upper cladding layer formed on this active layer. .

〔作用〕[Effect]

この発明においては、多ノー薄膜層内の高屈折率の半導
体層の下側クラッド層と接する部分が導波用の溝となり
、この溝の幅は高屈折率の半導体層を成長させる厚さに
よって制御することができる。In this invention, the portion of the high refractive index semiconductor layer in the multilayer thin film layer that contacts the lower cladding layer becomes a waveguide groove, and the width of this groove depends on the thickness of the high refractive index semiconductor layer grown. can be controlled.

〔実施例〕〔Example〕

第１図はこの発明の半導体レーザ装置の一実施例の断面
ならびに下側クラッド層下面における等価的屈折率分布
の例を示す図で、第５図と同一符号は同一部分を示し、
１２ａ、１２ｂはそれぞれ低屈折率の半導体層であるｎ
型層（以下低屈折率のｎｆｆ１層という）、１３は高屈
折率の半導体層であるｎ型層（以下高屈折率のｎ型層と
いう）、１４は前記低屈折率のｎ型層１２ｍ、１２ｂお
よび高屈折率のｎ型層１３とからなる多層薄膜層、１５
は水平横モード制御面、Ｗ、は導波用の溝の幅である。FIG. 1 is a diagram showing an example of the cross section of an embodiment of the semiconductor laser device of the present invention and the equivalent refractive index distribution on the lower surface of the lower cladding layer, and the same reference numerals as in FIG. 5 indicate the same parts;
12a and 12b are semiconductor layers with a low refractive index, respectively.
a type layer (hereinafter referred to as a low refractive index nff1 layer), 13 is an n-type layer which is a high refractive index semiconductor layer (hereinafter referred to as a high refractive index n-type layer), 14 is the low refractive index n-type layer 12m, 12b and a high refractive index n-type layer 13, a multilayer thin film layer 15
is the horizontal transverse mode control surface, and W is the width of the waveguide groove.

次に、この実施例で示す半導体レーザ装置の製造工程に
ついて説明する。Next, the manufacturing process of the semiconductor laser device shown in this example will be explained.

まず、基板２上に１例えばＬＰＥ、ＭＢＥおよびＣＶＤ
法等を用いて多層薄膜層１４を形成したのち、エツチン
グによってその一端に水平横モード制御面１５を形成す
る。次に、多層薄膜１−１４上より基板２上まで連続し
てｎ型の下側クラッド層ＳＶ形成し、さらＫその上にｎ
型の活性）ｆＩＩ４　。First, on the substrate 2, one such as LPE, MBE and CVD
After forming the multilayer thin film layer 14 using a method or the like, a horizontal transverse mode control surface 15 is formed at one end thereof by etching. Next, an n-type lower cladding layer SV is formed continuously from the top of the multilayer thin film 1-14 to the top of the substrate 2.
type activity) fII4.

ｐ型の上側クラッド層５．コンタクト層８を順次形成す
る。そして、基板２の下部および水平横モード制御面１
５の上部にそれぞれｎ側側１およびｐＨｌ電極９を形成
する。p-type upper cladding layer5. Contact layers 8 are sequentially formed. Then, the lower part of the substrate 2 and the horizontal transverse mode control surface 1
An n-side side 1 and a pHl electrode 9 are formed on the top of the electrode 5, respectively.

以上の工程で構成された半導体レーザ装置においては、
高屈折率のｎ型層１３と水平横モード制御面１５との接
する部分が導波用の溝となり、その幅Ｗ、は高屈折率の
ｎ型層１３を成長させる厚さによって制御することがで
きる。そして、この溝の幅Ｗ、を充分狭くしておけば、
低屈折率のｎ型層１２ａ、１２ｂと高屈折率のｎ型層１
３の屈折率差な大きくしても水平横モードは基本モード
のみとなる。このため、高出力時に温度上昇およびキャ
リア密度の分布変化かあっても屈折率分布が大きく変化
することはない。In the semiconductor laser device configured with the above steps,
The part where the high refractive index n-type layer 13 and the horizontal transverse mode control surface 15 are in contact becomes a waveguide groove, and its width W can be controlled by the thickness of the high refractive index n-type layer 13 grown. can. If the width W of this groove is made narrow enough,
Low refractive index n-type layers 12a and 12b and high refractive index n-type layer 1
Even if the refractive index difference is increased to 3, the horizontal transverse mode becomes only the fundamental mode. Therefore, even if there is a temperature rise or a change in carrier density distribution at high output, the refractive index distribution does not change significantly.

なお、第１図において、ｎｌは水平横モード制御面１５
における等価的屈折率分布を示したものであるか、低屈
折率のｎ型層１２ｍ、１２ｂの屈折率を適当に変化させ
ることにより、ｎ、のような等価的屈折率分布を得るこ
ともできる。In addition, in FIG. 1, nl is the horizontal transverse mode control surface 15
By appropriately changing the refractive index of the low refractive index n-type layers 12m and 12b, an equivalent refractive index distribution such as n can also be obtained. .

第２図は水平横モード制御面１５を基板２に対して垂直
に形成したこの発明の半導体レーザ装置の他の実施例を
示す断面図である〇 第３図はこの発明の半導体レーザ装置のさらに他の実施
例の断面ならびに下側クラッド層下曲における等測的屈
折率分布の例を示す図で、第１図と同一符号は同一部分
を示し、多層薄膜層１４は低屈折率のｎ型層１２ａ〜１
２ｄおよび高屈折率のｎ型層　１３　ａ〜１３ｃからな
っている。FIG. 2 is a sectional view showing another embodiment of the semiconductor laser device of the present invention in which the horizontal transverse mode control surface 15 is formed perpendicular to the substrate 2. FIG. 3 is a cross-sectional view showing another embodiment of the semiconductor laser device of the present invention. This is a diagram showing an example of the isometric refractive index distribution in the cross section and the lower bend of the lower cladding layer of another embodiment, in which the same reference numerals as in FIG. 1 indicate the same parts, and the multilayer thin film layer 14 is a low refractive index n-type Layers 12a-1
2d and high refractive index n-type layers 13a to 13c.

この実施例で示す半導体レーザ装置では、多層薄膜層１
４内に三Ｊ−の高屈折率のｎ型層１３ａ。In the semiconductor laser device shown in this example, the multilayer thin film layer 1
4, an n-type layer 13a having a high refractive index of 3 J-.

１３ｂ、１３ｃを設けたので、こハらか水平横モード制
御面１５に接する部分にそれぞれ導波用の溝が形成され
、その等測的屈折率分布ｎ４のようになる。この構造に
おいてンーザ発振は、活性層４内の３箇所で生じるが、
低屈折率のｎ型層１２ａ　〜１２　ｄおよび高屈折率の
ｎ型１１＃１３ａ〜１３ｅｂ 各Ｖ−ザ発振の位相を同期させるとともに、水平横モー
ドを基本モードのみとすることかできる。Since the grooves 13b and 13c are provided, waveguide grooves are formed in the portions in contact with the horizontal transverse mode control surface 15, and the isometric refractive index distribution thereof becomes as shown in n4. In this structure, laser oscillation occurs at three locations in the active layer 4.
It is possible to synchronize the phase of each V-za oscillation of the low refractive index n-type layers 12a to 12d and the high refractive index n-type layers 11#13a to 13eb, and to make the horizontal transverse mode only the fundamental mode.

なお、上記実施例では高屈折率のｎ型層１３＆〜１３ｅ
を三Ｊ一般けて３個のンーザを集積した場合について説
明したが、集槓するＶ−ザの１１ｉＡ数を自由に選べる
ことはいうまでもない。In addition, in the above embodiment, high refractive index n-type layers 13&~13e
Although the case has been described in which three V-zers are integrated, it goes without saying that the number of 11iA of V-zers to be integrated can be freely selected.

第４図はこの発明の半導体レーザ装置のさらに他の実施
例ケ示す断面図で、第１図と同一符号は同一部分を示し
、１６は絶縁性基板、１９は低屈折率のｐ型層１７ａ、
１７ｂおよび高屈折率のｎ型層１８からなる多層薄膜層
％　２０は口１■記多層薄膜層１９の端面に設けたｎ　
１１１１電極である。FIG. 4 is a sectional view showing still another embodiment of the semiconductor laser device of the present invention, in which the same symbols as in FIG. 1 indicate the same parts, 16 is an insulating substrate, 19 is a low refractive index p-type layer 17a ,
17b and a high refractive index n-type layer 18;
1111 electrode.

この実施例では、ｐ側電極９とｎ側電極２０より正孔お
よび電子を注入した時、多層薄膜層１９と下側クラッド
Ｉｎ　３の接する面においては、高屈折率のｎ型層１Ｂ
の部分のみストライプ状の電流通路となり、さらに水平
横モードを安定にできるうえ、効率も高くできる。In this embodiment, when holes and electrons are injected from the p-side electrode 9 and the n-side electrode 20, the high refractive index n-type layer 1B is
Only the part formed by the current path becomes a striped current path, further stabilizing the horizontal transverse mode and increasing efficiency.

〔発明の効果〕〔Effect of the invention〕

この発明は以上説明したとおり、少なくとも二層の低屈
折率の半導体層にはさまれた少なくとも一層の高屈折率
の半導体層からなる基板上の一部に形成した多層薄膜層
と、この多層薄膜層上より基板上まで連続して形成した
下側クラッド層と、この下側クラッド層上に形成した活
性層と、この活性ｌ−上に形成した上側クラッド層とか
ら半導体Ｖ−ザ装置暑構成したので、Ａｉ　ＪｉＩｌ折
率の半導体層を成長させる厚さによって導波用の溝のｍ
を制御でき、正確で安定Ｅ−だ水平横モード制御が可能
になるという効果がある。As explained above, the present invention includes a multilayer thin film layer formed on a part of a substrate consisting of at least one high refractive index semiconductor layer sandwiched between at least two low refractive index semiconductor layers; A semiconductor V-device structure is formed by a lower cladding layer formed continuously from the top of the layer to the top of the substrate, an active layer formed on this lower cladding layer, and an upper cladding layer formed on this active layer. Therefore, the m of the waveguide groove can be determined depending on the thickness of the semiconductor layer with the refractive index of AiJIIl.
This has the effect of enabling accurate and stable horizontal transverse mode control.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の半導体レーザ装置の一実施例の断面
ならびに下側クラッド層下面における等測的屈折率分布
の例を示す図、第２図はこの発明の半導体／−ザ装置の
他の実施例を示す断面図、第３図はこの発明の半導体レ
ーザ装置のさらに他の実施例の断面ならびに下側クラッ
ド層下面における等測的屈折率分布の例を示す図、第４
図はこの発明の半導体レーザ装置のさらに他の実施例を
示す断面図、第５図は従来の半導体レーザ装置の断面な
らびに上側クラッド層上面における等測的屈折率分布ケ
示す図である。 図において、２は基板、３はｎ型の下側クラッド層、４
はｎ型の活性層、５はｐ型の上側クラッド層、１２ｍ、
１２ｂは低屈折率のｎ型層、１３は高屈折率のｎ型層、
１４は多層薄膜層である。 なお、各図中の同一符号は同一または相当部分を示す。 代理人　大岩　増　雄　（外２名） 第１図 第２図 第４図 手続補正書（自発） １・事件の表示　　　特願昭８０−２０９４０１号２・
発明ノ名称　　　　半導体レーザ装置３、補正をする者 代表者　志　岐　守　哉 ４、代理人 ５、補正の対象 明細書の特許請求の範囲の欄および発明の詳細な説明の
欄 ６、補正の内容 （１）明細書の特許請求の範囲を別紙のように補正する
。 （２）同じく第４頁７〜８行、および第８頁１７〜１８
行の［この多層薄膜層りより基板−１−まで連続して形
成した］を、「この多層薄膜層を含む基板−Ｌに形成し
た」と補正する。 （３）同じく第５頁１１〜１２行の「例えばＬＰＥ、Ｍ
ＢＥおよびＣＶＤ法等」を、「例えばＬ　ＰＥあるいは
ＭＢＥあるいはＭＯ−ＣＶＤ法等」と補正する。 以　　１−。 ２、特許請求の範囲 少なくとも二層の低屈折率の半導体層にはさまれた少な
くとも一層の高屈折率の半導体層からなる基板−１−の
一部に形成した多層薄膜層と、この多層薄膜層東倉本前
記基板」−栢形成した下側クラッド層と、この下側クラ
ッド層」−に形成した活性層と、この活性層−１−に形
成した上側クラッド層とを備えたことを特徴とする半導
体レーザ装置。FIG. 1 is a diagram showing a cross section of an embodiment of the semiconductor laser device of the present invention and an example of the isometric refractive index distribution on the lower surface of the lower cladding layer, and FIG. FIG. 3 is a cross-sectional view showing an embodiment of the present invention; FIG. 3 is a cross-sectional view of still another embodiment of the semiconductor laser device of the present invention; FIG.
This figure is a sectional view showing still another embodiment of the semiconductor laser device of the present invention, and FIG. 5 is a diagram showing the cross section of the conventional semiconductor laser device and the isometric refractive index distribution on the upper surface of the upper cladding layer. In the figure, 2 is a substrate, 3 is an n-type lower cladding layer, and 4 is a substrate.
is an n-type active layer, 5 is a p-type upper cladding layer, 12m,
12b is a low refractive index n-type layer, 13 is a high refractive index n-type layer,
14 is a multilayer thin film layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 4 Procedure amendment (voluntary) 1. Indication of case Patent Application No. 1980-209401 2.
Name of the invention Semiconductor laser device 3, Representative of the person making the amendment Moriya Shiki 4, Agent 5, Claims column of the specification to be amended and Detailed description of the invention column 6, Contents of the amendment ( 1) Amend the claims of the specification as in the attached sheet. (2) Similarly, page 4, lines 7-8, and page 8, lines 17-18
The line "This multilayer thin film layer was formed continuously up to the substrate -1-" is corrected to "The multilayer thin film layer was formed on the substrate -L including this multilayer thin film layer." (3) Also on page 5, lines 11-12, “For example, LPE, M
"BE and CVD method, etc." is corrected to "For example, LPE, MBE, MO-CVD method, etc." Below 1-. 2. Claims A multilayer thin film layer formed on a part of a substrate-1- consisting of at least one high refractive index semiconductor layer sandwiched between at least two low refractive index semiconductor layers, and this multilayer thin film. The present invention is characterized by comprising an active layer formed on the above-mentioned substrate - a lower cladding layer formed with a layer, an active layer formed on the lower cladding layer, and an upper cladding layer formed on the active layer -1-. Semiconductor laser equipment.

Claims (1)

【特許請求の範囲】[Claims] 少なくとも二層の低屈折率の半導体層にはさまれた少な
くとも一層の高屈折率の半導体層からなる基板上の一部
に形成した多層薄膜層と、この多層薄膜層上より前記基
板上まで連続して形成した下側クラッド層と、この下側
クラッド層上に形成した活性層と、この活性層上に形成
した上側クラッド層とを備えたことを特徴とする半導体
レーザ装置。A multilayer thin film layer formed on a part of a substrate, consisting of at least one high refractive index semiconductor layer sandwiched between at least two low refractive index semiconductor layers, and a continuous layer from above the multilayer thin film layer to the substrate. What is claimed is: 1. A semiconductor laser device comprising: a lower cladding layer formed using the same method, an active layer formed on the lower cladding layer, and an upper cladding layer formed on the active layer.
JP20940185A 1985-09-20 1985-09-20 Semiconductor laser Pending JPS6269579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20940185A JPS6269579A (en) 1985-09-20 1985-09-20 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20940185A JPS6269579A (en) 1985-09-20 1985-09-20 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6269579A true JPS6269579A (en) 1987-03-30

Family

ID=16572282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20940185A Pending JPS6269579A (en) 1985-09-20 1985-09-20 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6269579A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10626648B2 (en) 2015-05-13 2020-04-21 Nabtesco Corporation Sliding door apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10626648B2 (en) 2015-05-13 2020-04-21 Nabtesco Corporation Sliding door apparatus

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