JPS6263449A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6263449A
JPS6263449A JP61179906A JP17990686A JPS6263449A JP S6263449 A JPS6263449 A JP S6263449A JP 61179906 A JP61179906 A JP 61179906A JP 17990686 A JP17990686 A JP 17990686A JP S6263449 A JPS6263449 A JP S6263449A
Authority
JP
Japan
Prior art keywords
resin
molding bodies
heating
heated
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61179906A
Other languages
Japanese (ja)
Inventor
Yoshiaki Wakashima
若島　喜昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61179906A priority Critical patent/JPS6263449A/en
Publication of JPS6263449A publication Critical patent/JPS6263449A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/08—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/02—Preparation of the material, in the area to be joined, prior to joining or welding
    • B29C66/024—Thermal pre-treatments
    • B29C66/0242—Heating, or preheating, e.g. drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/114—Single butt joints
    • B29C66/1142—Single butt to butt joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/50—General aspects of joining tubular articles; General aspects of joining long products, i.e. bars or profiled elements; General aspects of joining single elements to tubular articles, hollow articles or bars; General aspects of joining several hollow-preforms to form hollow or tubular articles
    • B29C66/51—Joining tubular articles, profiled elements or bars; Joining single elements to tubular articles, hollow articles or bars; Joining several hollow-preforms to form hollow or tubular articles
    • B29C66/54—Joining several hollow-preforms, e.g. half-shells, to form hollow articles, e.g. for making balls, containers; Joining several hollow-preforms, e.g. half-cylinders, to form tubular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/50—General aspects of joining tubular articles; General aspects of joining long products, i.e. bars or profiled elements; General aspects of joining single elements to tubular articles, hollow articles or bars; General aspects of joining several hollow-preforms to form hollow or tubular articles
    • B29C66/51—Joining tubular articles, profiled elements or bars; Joining single elements to tubular articles, hollow articles or bars; Joining several hollow-preforms to form hollow or tubular articles
    • B29C66/54—Joining several hollow-preforms, e.g. half-shells, to form hollow articles, e.g. for making balls, containers; Joining several hollow-preforms, e.g. half-cylinders, to form tubular articles
    • B29C66/542—Joining several hollow-preforms, e.g. half-shells, to form hollow articles, e.g. for making balls, containers; Joining several hollow-preforms, e.g. half-cylinders, to form tubular articles joining hollow covers or hollow bottoms to open ends of container bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/73—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/739—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/7392—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of at least one of the parts being a thermoplastic
    • B29C66/73921—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of at least one of the parts being a thermoplastic characterised by the materials of both parts being thermoplastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the breakdown of the main body of an IC due to mechanical or thermal shocks when molding bodies are bonded and to prevent the deterioration of an element due to accumulation of moisture in a gap of the inside of the molding bodies after bonding and sealing, by preheating the element at a temperature lower than the heating temperature of the resin molding bodies. CONSTITUTION:A unit comprising an IC and a lead frame is held with package shaped thermoplastic-resin molding bodies 6 and 7 at the upper and lower sides. A holding part 8 is heated at the molding temperature of the resin molding bodies, e.g., at 350 deg.C. Thus the resin molding bodies are bonded and sealed. The heating of the holding part is carried out as follows. At first the part is preheated at about 200 deg.C. Then the part is locally heated for a short time by a means such as ultrasonic-wave electric vibration, high frequency heating, infrared-ray heating or hot jet. Namely, the bonding parts are not heated and connected one time but are heated and connected (sealed) in a plurality of times (two times). Before main sealing, the part is preheated at a lower temperature. Thereafter, the frame is cut from leads, which are protruded to the outside, and the IC device of one unit is obtained.

Description

【発明の詳細な説明】 この発明は半導体装置の製造法特に樹脂封止半導体装置
の封止技術に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and particularly to a sealing technique for a resin-sealed semiconductor device.

集積回路（以下ＩＣと略称する）は一般に多数のＩＣ単
位を一体的に製造し、次いでこの一体品を型枠中で各Ｉ
Ｃ単位ごとに樹脂でモールドし、さらにリード等の不要
部分を打ち抜き加工して各ＩＣ単位に分離する方法が採
用されている。Integrated circuits (hereinafter abbreviated as IC) are generally manufactured by integrally manufacturing a large number of IC units, and then this integrated circuit is assembled into a mold for each IC.
A method is adopted in which each C unit is molded with resin, and unnecessary parts such as leads are punched out to separate each IC unit.

、従来のＩＣ製造工程における樹脂成形法では、エポキ
シ樹脂やシリコーン樹脂等の熱硬化性樹脂によるトラン
スファーモールド法が多く採用されている。このような
モールド法によれば、型枠にモールド用樹脂を流し込む
通路（う／ナー）およびこの型枠から樹脂が流出しない
ようにするためのダム等をそなえた特別のモールド装置
が必要であり、又樹脂の硬化に少なからぬ時間（６０〜
１８０秒）がかかるため生産性が低く、前記ランナー内
で樹脂が硬化してしまうので樹脂がむだになる等の欠点
がある。As a resin molding method in a conventional IC manufacturing process, a transfer molding method using a thermosetting resin such as an epoxy resin or a silicone resin is often adopted. According to this molding method, a special molding device is required, which is equipped with a channel for pouring the molding resin into the mold and a dam to prevent the resin from flowing out of the mold. , and it takes a considerable amount of time for the resin to harden (60~
There are disadvantages such as low productivity because it takes 180 seconds) and waste of resin because the resin hardens within the runner.

このような樹脂成形法の欠点にかんがみ、本願にかかる
出願人は、さきに特願昭５０−２２９０９号（特開昭５
ｌ−９８９６９−）で「集積回路のモールド方法」の発
明を提案した。上記発明はＩＣの一単位をあらかじめ準
備された上下に分れた樹脂成型体で挾持し、次いでその
挟持部分を接合する）ＩＣのモールド方法を特徴とする
ものである。上記発明によれば大量生産に適合し、かつ
モールドに必要な樹脂の量を著しく低減させる利点を有
する。In view of these drawbacks of the resin molding method, the applicant of this application previously filed Japanese Patent Application No. 50-22909 (Japanese Unexamined Patent Application No. 50-22909).
1-98969-), he proposed the invention of ``a method for molding integrated circuits.'' The invention is characterized by an IC molding method in which one unit of an IC is sandwiched between upper and lower resin molded bodies prepared in advance, and then the sandwiched parts are joined. The above invention has the advantage of being suitable for mass production and significantly reducing the amount of resin required for the mold.

しかしこのような成形体の接合時の機械的又は熱的衝撃
でＩＣ本体が破損したり、接合封止後に成型体内部の空
隙に水分がたまり素子が劣化する等の問題があった。However, there have been problems such as the IC body being damaged by mechanical or thermal shock during bonding of such molded bodies, and moisture accumulating in the voids inside the molded bodies after bonding and sealing, resulting in deterioration of the element.

本発明は上記した従来技術の欠点を取除くためになされ
たものである。The present invention has been made to eliminate the drawbacks of the prior art described above.

以下、本発明を実施例に従って詳述する。Hereinafter, the present invention will be explained in detail according to examples.

第１図乃至第４図は本発明による樹脂封止ＩＣの製造法
の組立工程を示す。1 to 4 show the assembly process of the method for manufacturing a resin-sealed IC according to the present invention.

第１図（ａ）および第１図（ｂ）に示すようにリードフ
レームの連続体ｌの各単位フレームに対してシリコンよ
り成るＩＣチップ（半導体素子）２をベレットボンディ
ングし、次いでチップの電極とリードとの間をワイヤ３
でボンディングする。点線枠Ｌｌは後述する樹脂成形体
が位置するところを示している。なお、第１図（ｂ）は
第１図（ａ）のＡ−入切゛断断面図を示す。As shown in FIGS. 1(a) and 1(b), an IC chip (semiconductor element) 2 made of silicon is bullet-bonded to each unit frame of the lead frame continuum l, and then the chip electrodes and Wire 3 between the leads
Bonding with. A dotted line frame Ll indicates a position of a resin molded body, which will be described later. Note that FIG. 1(b) shows a sectional view taken along the line A in FIG. 1(a).

第２図を参照し粘稠性の軟質材料５をボッティング（滴
下）により少なくとも半導体素子の露出するＡ２電極と
その電極に接触している金属ワ・イヤ部とを包囲する範
囲で被覆する。すなわち、第２図（ｂ）で示すように露
出するＡ２電極部分Ａ、および金属ワイヤ３の一部は軟
質材料の絶縁物５によって被覆される。なお、第２図（
ｂ）においてＪｌはＰＮ接合、１０はＳｊＯ！膜、１１
はリンガラス膜あるいはポリイミドイソインドロキナゾ
リンジオン樹脂等の最終絶縁膜である。軟質材料５とし
ては例えばシリコーンゲル、シリコーングリース。Referring to FIG. 2, a viscous soft material 5 is coated by botting (dropping) in an area surrounding at least the exposed A2 electrode of the semiconductor element and the metal wire portion in contact with the electrode. That is, as shown in FIG. 2(b), the exposed A2 electrode portion A and a part of the metal wire 3 are covered with an insulator 5 made of a soft material. In addition, Figure 2 (
In b), Jl is a PN junction, and 10 is SjO! membrane, 11
is a final insulating film such as a phosphorus glass film or a polyimide isoindoquinazoline dione resin. Examples of the soft material 5 include silicone gel and silicone grease.

シリコーンゴム等が適当である。この後、１００〜２０
０℃で処理し、軟質材料がその軟質性乃至弾力性を失わ
ずかつ最初のボッティングの状態を保持するようにする
。Silicone rubber etc. are suitable. After this, 100-20
The treatment is carried out at 0° C. so that the soft material does not lose its softness or elasticity and retains its original potting condition.

次に、予め準備された第５図に示すごときパッケージ状
の熱可塑性樹脂（例えばＰＰＳ樹脂：ポリフェニレンサ
ルファイド樹脂）成形体６，７で第３図に示すように上
下より上記ＩＣとリードフレームからなる一単位を挾持
する。Next, as shown in FIG. 5, a package-shaped thermoplastic resin (for example, PPS resin: polyphenylene sulfide resin) molded body 6, 7 as shown in FIG. 5 is prepared in advance, and as shown in FIG. Hold one unit.

この後樹脂成形体の成形温度、例えば３５０℃で挟持部
分８を加熱することＫより、第４図に示すように樹脂成
形体を接合封止するが、上記挟持部分の加熱は予め２０
０℃程度で予備加熱し、その後、超音波電気振動、高周
波加熱、赤外線加熱。Thereafter, the resin molded body is bonded and sealed by heating the clamped portion 8 at the molding temperature of the resin molded body, for example, 350°C, as shown in FIG.
Preheat at around 0℃, then apply ultrasonic electric vibration, high frequency heating, and infrared heating.

あるいはホットジェット等の手段によって短時間で局部
加熱を行ない封止する。すなわち、接合部を一度に加熱
・接続せずに複数回（２回）に分けて加熱・接続（封止
）し、かつ、水封上前にそれよりも低い温度で予備加熱
するのである。この後、図示されないが、外部に出てい
るリードからフレーム部分を切断し、各単位のＩＣ装置
を得る。Alternatively, local heating is performed in a short period of time by means such as a hot jet to seal. That is, the joint portions are not heated and connected all at once, but are heated and connected (sealed) in multiple (twice) times, and are preheated at a lower temperature before being water-sealed. Thereafter, although not shown, the frame portion is cut from the external leads to obtain each unit of the IC device.

以上実施例で述べた本発明によれば下記の理由で前記目
的が達成できる。According to the present invention described in the embodiments above, the above object can be achieved for the following reasons.

（１）樹脂成形体と素子との間に空間が存在する場合、
樹脂成形体内部あるいは外部から樹脂成形体内に浸入し
た水分が空間部で飽和して水滴を作り、これが特性劣化
の原因例えばｉ腐蝕による特性劣化となっていたが、軟
質材料で素子のＡ２電極表面を密着被飽しであるため水
分が素子の電極表面に到達してもそれが水滴や水膜等の
液体となっ゛て滞留することなくしたがって劣化を防止
できる。(1) If there is a space between the resin molded body and the element,
Moisture that has entered the resin molded body from inside or outside the resin molded body becomes saturated in the space and forms water droplets, which is the cause of characteristic deterioration, for example due to i-corrosion. Since the electrodes are closely saturated, even if moisture reaches the electrode surface of the element, it does not become a liquid such as water droplets or a water film and stay there, thereby preventing deterioration.

（２）軟質材料５はシリコーンゴムのような弾力性を有
するものである。したがって上下の樹脂成形体の接合時
に与えられる振動により金属ワイヤ間の接触をこの軟質
材料被覆の弾力性によって保護することができる。また
、接合時に加熱する場合にもこの軟質材料被覆によって
熱的変化による素子の特性劣化を保護できる。このよう
な理由により、金属ワイヤの一部のみならずすべてこの
軟質材料で覆うことが好ましい。金属ワイヤもすべて軟
質材料で覆うことは何等困難性を有するものではない。(2) The soft material 5 has elasticity like silicone rubber. Therefore, the contact between the metal wires can be protected by the elasticity of the soft material coating due to the vibrations applied when the upper and lower resin molded bodies are joined. Further, even when heating is applied during bonding, this soft material coating can protect the characteristics of the element from deteriorating due to thermal changes. For this reason, it is preferable to cover not only a part of the metal wire but also the entire metal wire with this soft material. It is not difficult to cover all the metal wires with a soft material.

（３）この熱可塑性樹脂による成形体バフケージは従来
のトランスファモールドに比べて設備費、設置スペース
の点でいずれも一１／２以下に低減でき、また組立の自
動化が容易である。(3) This molded buff cage made of thermoplastic resin can reduce equipment costs and installation space to less than 1/2 compared to conventional transfer molds, and can be easily automated for assembly.

（４）本発明によれば軟質材料及び成形体の樹脂を適当
忙選ぷことにより、従来セラミックパッケージ等で問題
となっていたα線によるＩＣメモリ等の誤動作への対策
ともなる。(4) According to the present invention, by appropriately selecting the soft material and the resin of the molded body, it is possible to prevent malfunctions of IC memories and the like caused by alpha rays, which have been a problem with conventional ceramic packages and the like.

さらに、本発明によれば以下の効果が得られる。Furthermore, according to the present invention, the following effects can be obtained.

（１）　　加熱を予備加熱と本加熱の２回に分けている
ため本加熱の時間を短くすることができ良好な封止を行
うことができる。(1) Since the heating is divided into two stages, preheating and main heating, the time for main heating can be shortened and good sealing can be achieved.

本発明は前記実施例に限定されない。The invention is not limited to the above embodiments.

第６図は本発明においてリードフレーム１のペレゾト取
り付は部分（タブ部分）を折り曲げておぎ、ＩＣチップ
２の上を軟質材料５で核種しタブ部分の下面が下側の樹
脂成形体の底面に接する状態で上側の樹脂成形体を重ね
て挾持、接合させる場合の例を示す。このような構造に
よれば下側の樹脂成形体の空間部を有効に利用でき、樹
脂封止半導体装置を薄く形成できる。また、金属ワイヤ
が接続されるリード面と素子の電極面との位置関係にお
いて、電極面はリード面とほぼ同じ平面上に位置するか
リード面より下に位置するためワイヤか素子のかど部に
接触することはない。FIG. 6 shows that according to the present invention, the lead frame 1 is mounted by bending the part (tab part), and applying a nuclide over the IC chip 2 with a soft material 5, so that the bottom surface of the tab part is the bottom surface of the resin molded body. An example is shown in which the upper resin molded bodies are stacked, clamped, and joined in a state in which they are in contact with each other. According to such a structure, the space in the lower resin molded body can be effectively used, and the resin-sealed semiconductor device can be formed thin. In addition, regarding the positional relationship between the lead surface to which the metal wire is connected and the electrode surface of the element, the electrode surface is either on the same plane as the lead surface or is located below the lead surface, so the wire or the edge of the element There will be no contact.

第７図は本発明において半導体素子表面を軟質材料で被
覆する際にリードフレームの下面に粘着材を塗布した絶
縁テープ４又は絶縁板を接着した例である。このテープ
４により軟質材の流出防止を計ることができ、軟質材の
横方内拡がりを規定することができる。FIG. 7 shows an example in which an insulating tape 4 coated with an adhesive material or an insulating plate is adhered to the lower surface of a lead frame when covering the surface of a semiconductor element with a soft material in the present invention. This tape 4 can prevent the soft material from flowing out and can define the lateral inward expansion of the soft material.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第４図は本発明による半導体装置の製造法の
一実施例を示し、このうち第１図（ａ）は平面図、第１
図（ｂ）はＡ−Ａ切断断面図、第２図（ａｌは一工程断
面図、第２図（ｂ）は第２図（ａｌの部分拡大断面図、
第３図、第４図はそれぞれ一工程断面図である。さらに
、第５図は樹脂成形体の形状を示す斜面図、そして第６
図及び第７図は本発明による半導体装置の製造法の他の
実施例によって製造された半導体装置の断面図である。 １・・・リードフレーム、２・・・ＩＣ２子チツプ、３
・・・ワイヤ、４・・・絶縁テープ、５−・・・軟質材
料、６゜７・・・樹脂成形体、８・・・挾持（接合）部
。 第　　１　　図　（ｃＬ） 第　　１　　図（ｂ） 第　　４　　図 第　　５　　図 第　　６　　図 第　　７　　図1 to 4 show an embodiment of the method for manufacturing a semiconductor device according to the present invention, of which FIG. 1(a) is a plan view, and FIG.
Figure (b) is a cross-sectional view taken along the line A-A, Figure 2 (al is a cross-sectional view of one step, Figure 2 (b) is a partially enlarged cross-sectional view of al,
3 and 4 are sectional views of one step, respectively. Furthermore, FIG. 5 is a perspective view showing the shape of the resin molded body, and FIG.
7 and 7 are cross-sectional views of a semiconductor device manufactured by another embodiment of the method for manufacturing a semiconductor device according to the present invention. 1...Lead frame, 2...2 IC chips, 3
. . . Wire, 4 . Figure 1 (cL) Figure 1 (b) Figure 4 Figure 5 Figure 6 Figure 7

Claims (1)

【特許請求の範囲】[Claims] １、半導体素子が取り付けられたリードフレーム及び上
型・下型の樹脂成形体を用意し、前記上型・下型の樹脂
成形体の間に前記リードフレーム及び半導体素子が位置
するようにそれらを配置し、かつ前記樹脂成形体を加熱
して前記樹脂成形体を接続する半導体装置の製造法にお
いて、前記樹脂成形体の加熱温度よりも低い温度で前記
樹脂成形体を予備加熱することを特徴とする半導体装置
の製造法。1. Prepare a lead frame and upper and lower molded resin bodies to which a semiconductor element is attached, and place them so that the lead frame and semiconductor element are located between the upper and lower resin molded bodies. In the method for manufacturing a semiconductor device, the resin molded body is preheated at a temperature lower than the heating temperature of the resin molded body. A method for manufacturing semiconductor devices.
JP61179906A 1986-08-01 1986-08-01 Manufacture of semiconductor device Pending JPS6263449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61179906A JPS6263449A (en) 1986-08-01 1986-08-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61179906A JPS6263449A (en) 1986-08-01 1986-08-01 Manufacture of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9728679A Division JPS5623759A (en) 1979-08-01 1979-08-01 Resin-sealed semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6263449A true JPS6263449A (en) 1987-03-20

Family

ID=16073975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61179906A Pending JPS6263449A (en) 1986-08-01 1986-08-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6263449A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0299775A2 (en) * 1987-07-16 1989-01-18 Digital Equipment Corporation Method of assembling a tab bonded semiconductor chip package
JP2010272696A (en) * 2009-05-21 2010-12-02 Panasonic Electric Works Co Ltd Semiconductor device
US8147364B2 (en) 2006-03-28 2012-04-03 Toyota Jidosha Kabushiki Kaisha Flow rate regulation valve, rotating body, and belt-type stepless transmission

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158651A (en) * 1979-05-28 1980-12-10 Hitachi Chem Co Ltd Molding method for package of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158651A (en) * 1979-05-28 1980-12-10 Hitachi Chem Co Ltd Molding method for package of semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0299775A2 (en) * 1987-07-16 1989-01-18 Digital Equipment Corporation Method of assembling a tab bonded semiconductor chip package
US8147364B2 (en) 2006-03-28 2012-04-03 Toyota Jidosha Kabushiki Kaisha Flow rate regulation valve, rotating body, and belt-type stepless transmission
JP2010272696A (en) * 2009-05-21 2010-12-02 Panasonic Electric Works Co Ltd Semiconductor device

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