JPS625597A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPS625597A JPS625597A JP60144908A JP14490885A JPS625597A JP S625597 A JPS625597 A JP S625597A JP 60144908 A JP60144908 A JP 60144908A JP 14490885 A JP14490885 A JP 14490885A JP S625597 A JPS625597 A JP S625597A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- light absorption
- film
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 11
- 230000031700 light absorption Effects 0.000 claims description 12
- 239000011195 cermet Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 く技術分野〉 本発明は薄膜ＥＬ素子に関するものである。[Detailed description of the invention] Technical fields> The present invention relates to a thin film EL device.
〈従来技術〉
薄膜ＥＬ素子は、高輝度、高い信頼性および高精細度の
特徴を有し、高度情報化社会における平面情報表示素子
として注目を集めている。背面電極は通常ＡＡ’が用い
られるが、ＡＩ！の可視光の反射率は９０ｃ４と非常に
高く、外部光の反射による表示品質の低下が明るい環境
下で生じ得る。<Prior Art> Thin film EL devices have the characteristics of high brightness, high reliability, and high definition, and are attracting attention as flat information display devices in an advanced information society. AA' is normally used for the back electrode, but AI! The reflectance of visible light is extremely high at 90c4, and display quality may deteriorate in bright environments due to reflection of external light.
〈発明の目的〉
本発明は上記外部光反射を低減することを目的とし、外
部光の吸収層を発光層と背面電極との間に設けることに
より、明るい環境のもとてのコントラスト低下防止を行
うものである。<Object of the Invention> The present invention aims to reduce the above-mentioned external light reflection, and by providing an external light absorption layer between the light emitting layer and the back electrode, it is possible to prevent the contrast from decreasing in a bright environment. It is something to do.
〈発明の構成〉
本発明の薄膜ＥＬ素子は、背面電極層と発光層との間に
光吸収層としてのサーメツト膜を設けたことを特徴とす
るものである。<Structure of the Invention> The thin film EL device of the present invention is characterized in that a cermet film as a light absorption layer is provided between the back electrode layer and the light emitting layer.
〈実施例〉
誘電体層中に金属の微粒子を分散させた材料はサーメッ
トと呼ばれ、薄膜電気抵抗体、太陽エネルギー吸収体等
の目的で開発されている。<Example> A material in which fine metal particles are dispersed in a dielectric layer is called cermet, and has been developed for purposes such as thin film electrical resistors and solar energy absorbers.
該サーメットは、電気抵抗値および光学（可視）吸収係
数の制御性に優れている。したがって、薄膜ＥＬ素子用
の光吸収層材料に適している。The cermet has excellent controllability of electrical resistance value and optical (visible) absorption coefficient. Therefore, it is suitable as a light absorption layer material for thin film EL devices.
薄膜ＥＬ素子において、光吸収層の特性から、２通りの
用い方がある。すなわち、高い比抵抗おく
よび高い絶縁破壊電界を有し、好まし颯は高い比誘電率
をもち、薄膜ＥＬ素子の基本構成層である絶縁層として
用いる場合と、低比抵抗で背面電極もしくは背面電極の
一部として用いる場合とがある。一般に、サーメットの
光吸収係数と比抵抗とは相反する関係があるため、光吸
収係数を高くすると比抵抗は低くなるため、実用上は背
面電極として用いる後者の方法が適している。There are two ways to use thin-film EL devices depending on the characteristics of the light absorption layer. In other words, it has a high specific resistance and a high dielectric breakdown electric field, and preferably has a high dielectric constant and is used as an insulating layer which is a basic constituent layer of a thin film EL element, and also has a low specific resistance and is used as a back electrode or back surface. It may be used as part of an electrode. Generally, there is a contradictory relationship between the light absorption coefficient and specific resistance of a cermet, and as the light absorption coefficient increases, the specific resistance decreases, so the latter method of using the cermet as a back electrode is suitable in practice.
実施例に用いたＳｉＯ：Ｎｉ膜の光吸収係数を第２図に
示す。FIG. 2 shows the light absorption coefficient of the SiO:Ni film used in the example.
Ｓｉｎ：Ｎｉ蒸着膜を光吸収層とした場合の素子作成方
法および素子特性について以下に記す。A method for manufacturing a device and device characteristics in the case where a Sin:Ni vapor deposited film is used as a light absorption layer will be described below.
ガラス基板上に透明電極ＣＩＴＯ）、下部絶縁層（Ｙ２
Ｏ２）、発光層（ＺｎＳ：Ｍｎ）、上部絶縁層（Ｙ２Ｏ
２）を順次ＥＢ蒸着法およびスパッタリング法により形
成し、その上にポジタイプのフォトレジストにより所定
の電極パターン用のレジストパターンを形成し、その上
に、Ｎｉを１０〜９０ａｔ％含むＳｉｎ：ＮｉおよびＡ
Ｉ！を蒸着により、それぞれ１００〜５０００Ａおよび
５００〜３０００Ａ形成する。A transparent electrode CITO) and a lower insulating layer (Y2
O2), light emitting layer (ZnS:Mn), upper insulating layer (Y2O
2) is sequentially formed by EB evaporation method and sputtering method, a resist pattern for a predetermined electrode pattern is formed using a positive type photoresist, and on top of that, a resist pattern of Sin:Ni and A containing 10 to 90 at% Ni is formed.
I! 100 to 5000 A and 500 to 3000 A, respectively, are formed by vapor deposition.
その後、レジストの剥離によシリフトオフを完了し、所
定の背面電極パターンを有する背面黒化薄膜ＥＬ素子が
得られる。Thereafter, lift-off is completed by peeling off the resist, and a back-blackened thin film EL element having a predetermined back electrode pattern is obtained.
第１図に、その構造を示す。図に於いて、■はガラス基
板、２は透明電極（ＩＴＯ）、３は下部絶縁層（Ｙ２Ｏ
２）、４は発光層（ＺｎＳ：Ｍｎ）、５は上部絶縁層（
Ｙ２Ｏ２）、６は光吸収層（Ｓｉｎ：Ｎｉ） 、７は背
面電極（ＡＩりである。Figure 1 shows its structure. In the figure, ■ is a glass substrate, 2 is a transparent electrode (ITO), and 3 is a lower insulating layer (Y2O
2), 4 is a light emitting layer (ZnS:Mn), 5 is an upper insulating layer (
6 is a light absorption layer (Sin:Ni), and 7 is a back electrode (Al).
第３図に示すように、本実施例（ａ）では、従来技術（
ｂ）（光吸収層をもたないもの）に比べ、著しくコント
ラストを改善できる。As shown in FIG. 3, in this embodiment (a), the conventional technology (
Compared to b) (which does not have a light absorption layer), the contrast can be significantly improved.
〈発明の効果〉
以上詳細に説明したように、本発明によれば、外部光反
射を低減することができ、明るい環境下に於いても高い
コントラスト比が得られる、きわめて有用な薄膜ＥＬ素
子を提供することができるものである。<Effects of the Invention> As explained in detail above, the present invention provides an extremely useful thin film EL element that can reduce external light reflection and provide a high contrast ratio even in bright environments. It is something that can be provided.
なお、光吸収材料には、例えば、低反射率金属、ＺｎＴ
ｅ、Ｓｉ等のバンドギャップエネルギーの小さい半導体
材料等、多数存在するが、膜作成の容易さ、膜の安定性
、コスト、毒性等の点から、本発明によるサーメット適
用の実用性は高いものである。Note that the light-absorbing material includes, for example, a low reflectance metal, ZnT
Although there are many semiconductor materials with small band gap energy such as E, Si, etc., the practicality of applying the cermet according to the present invention is high in terms of ease of film creation, film stability, cost, toxicity, etc. be.
第１図は本発明の一実施例の断面図、第２図は同実施例
に用いたＳｉＯ：Ｎｉ 膜の光吸収係数の波長依存性を
示す図、第３図は同実施例と従来素子のコントラスト比
を示す図である。
符号の説明
■・・・ガラス基板、２・・・透明電極ＣＩＴＯ）、
３・・・下部絶縁層（Ｙ２Ｏ２）、４・・・発光層（Ｚ
ｎＳ：Ｍｎ）、５・・・上部絶縁層（Ｙ２Ｏ２）、６・
・・光吸収層（ＳｉＯ：Ｎｉ）、７・・・背面電極（Ａ
Ｉ）。
八
入理人 弁理士 福 士 愛 彦（他２名）／＝−ガラ
人蓼不欠
ノトノ４６朗グー ９ｒ放イＩｑ Ｏ力Ｊ 図第１図Fig. 1 is a cross-sectional view of one embodiment of the present invention, Fig. 2 is a diagram showing the wavelength dependence of the optical absorption coefficient of the SiO:Ni film used in the same embodiment, and Fig. 3 is a diagram showing the same embodiment and a conventional element. It is a figure which shows the contrast ratio of. Explanation of symbols■...Glass substrate, 2...Transparent electrode CITO),
3... Lower insulating layer (Y2O2), 4... Light emitting layer (Z
nS:Mn), 5... Upper insulating layer (Y2O2), 6.
...Light absorption layer (SiO:Ni), 7... Back electrode (A
I). Yarihito Patent Attorney Fukushi Aihiko (and 2 others)／=-Garajin 蓼ふくんのトノ 46 郎Ｇ 9r 類 い q O 力 J Figure 1
Claims (1)
に光吸収層としてのサーメット膜を設けたことを特徴と
する薄膜ＥＬ素子。1. A thin film EL device characterized in that a cermet film as a light absorption layer is provided between a back electrode layer and a light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60144908A JPS625597A (en) | 1985-07-01 | 1985-07-01 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60144908A JPS625597A (en) | 1985-07-01 | 1985-07-01 | Thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS625597A true JPS625597A (en) | 1987-01-12 |
Family
ID=15373082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60144908A Pending JPS625597A (en) | 1985-07-01 | 1985-07-01 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS625597A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262310A (en) * | 1991-05-31 | 1993-11-16 | Akebono Brake Industry Co, Ltd. | Enzymatic decomposition method of chitin-containing materials |
| JP2013101971A (en) * | 2013-01-29 | 2013-05-23 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
| US9166180B2 (en) | 2001-06-20 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having an organic light emitting diode that emits white light |
-
1985
- 1985-07-01 JP JP60144908A patent/JPS625597A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262310A (en) * | 1991-05-31 | 1993-11-16 | Akebono Brake Industry Co, Ltd. | Enzymatic decomposition method of chitin-containing materials |
| US9166180B2 (en) | 2001-06-20 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having an organic light emitting diode that emits white light |
| US9178168B2 (en) | 2001-06-20 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | White light emitting device |
| US9276224B2 (en) | 2001-06-20 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting device having dual flexible substrates |
| JP2013101971A (en) * | 2013-01-29 | 2013-05-23 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
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