JPS6254447A - Heat treatment for photoconductive cell - Google Patents

Abstract

PURPOSE:To contrive equalization of an atmosphere for heat treatment by a method wherein the inflow port for inert gas is formed in a shower form and inert gas is uniformly flowed over the whole surface of the substrate from the vertical direction, and at the same time, is flowed out through both ends of the heat-treating furnace. CONSTITUTION:A photoconductive cell forming substrate (substrate to be treated) 1 is housed in a heat-treating jig 2 installed in the furnace core part. In contrast thereto, a shower gas introducing port 8 in a heat-treating furnace 3 is coupled with gas bombs 5 and 6 outside the furnace via a pipe 10 and ON-OFF valves 11-13. The introducing port 8 is formed equal in size with the jig 2 or larger than it and gas is led out from the vertical direction so as to uniformly spread over the whole surface of the substrate. Hereby, an atmosphere for activation treatment is uniformly distributed on the substrate 1 being housed in the jig. As a result, dispersion of the substrate temperature which is caused by unbalance of an inert gas flow can be dissolved.

Description

【発明の詳細な説明】 〔概要〕 蒸着法またはスパッタ法により例えばＣｄＳｅ、　Ｃｄ
Ｓなどが成膜された密着形と呼ばれる光導電性センサ基
板に対する活性化処理に係る炉内不活性ガスの雰囲気条
件の均整化をはかるものである。[Detailed Description of the Invention] [Summary] For example, CdSe, Cd
This is intended to equalize the atmosphere conditions of the inert gas in the furnace related to the activation process for a so-called contact type photoconductive sensor substrate on which a film of S or the like is formed.

〔産業上の利用分野〕[Industrial application field]

本発明はファクシミリ装置などの光電変換系を構成する
光導電素子の熱処理法に関す。The present invention relates to a heat treatment method for a photoconductive element constituting a photoelectric conversion system of a facsimile machine or the like.

■−■族化合物の半導体例えばＣｄＳｅ、　ＣｄＳなど
の蒸着、スパッタ薄膜は、該薄膜生成に続き光応答性機
能を付与する活性化処理が行われる。活性化処理は基板
温度を６５０℃とし、窒素Ｎ２ガス雰囲気中でＣｄＳｅ
、　ＣｄＳ粉末と共に時間９０分間行う。After the thin film is formed by vapor deposition or sputtering of a semiconductor of the 1-2 group compound, such as CdSe or CdS, an activation treatment is performed to impart a photoresponsive function. In the activation process, the substrate temperature was set to 650°C, and CdSe was heated in a nitrogen N2 gas atmosphere.
, with CdS powder for a time of 90 minutes.

しかしながら１本発明に係るセンサ素子形成基板は、横
方向２１０ｍｍ、幅２０ＩＩｌｌ１）の寸法、及び基板
内に千数百個の素子を搭載するものであるため、基板全
面にわたり再現性よく且つ各素子に付与する光電流／暗
電流などの光応答特性が均一となるような処理温度を付
与することが要請される。However, since the sensor element forming substrate according to the present invention has dimensions of 210 mm in the horizontal direction and 20 mm in width, and has over 1,000 elements mounted on the substrate, it can be easily reproducibly distributed over the entire surface of the substrate, and each element can be It is required to apply a processing temperature such that photoresponse characteristics such as applied photocurrent/dark current are uniform.

〔従来の技術と発明が解決しようとする問題点〕第２図
は従来の熱処理炉の構成を示す炉断面図である。[Prior art and problems to be solved by the invention] FIG. 2 is a sectional view of a conventional heat treatment furnace showing the structure thereof.

図中、ｌは予成膜の半導体薄膜形成基板、２は前記基板
ｌを収納する処理治具、３は熱処理炉。In the figure, 1 is a preformed semiconductor thin film forming substrate, 2 is a processing jig for storing the substrate 1, and 3 is a heat treatment furnace.

４は熱処理炉３のヒータ部、及び５と６は熱処理炉３に
付設されるＮ２等の不活性ガスボンベである。熱処理炉
３による処理冶具２内の基板１は。4 is a heater section of the heat treatment furnace 3, and 5 and 6 are inert gas cylinders such as N2 attached to the heat treatment furnace 3. The substrate 1 inside the processing jig 2 in the heat treatment furnace 3.

温度６５０℃、処理時間９０分間行なわれるが、炉内は
不活性ガスを１〜５／／ｍｉｎの速度で流して。The treatment was carried out at a temperature of 650°C for 90 minutes, with inert gas flowing through the furnace at a rate of 1 to 5 minutes.

予成膜の半導体薄膜に対する固溶化促進とその結晶化が
行なわれる。The solid solution of the preformed semiconductor thin film is promoted and its crystallization is performed.

ところで、前記寸法を具備する基板サイズはもとより、
処理基板の大型化にともない均一な炉温度設定をするこ
とが要請されているが、炉管の一端から他端へ流すガス
流構成では千数百個の素子について光応答変換特性のバ
ラツキが解消出来ず問題である。By the way, as well as the substrate size having the above dimensions,
As processing substrates become larger, uniform furnace temperature settings are required, but a gas flow configuration in which the gas flows from one end of the furnace tube to the other eliminates variations in photoresponse conversion characteristics for over 1,000 elements. This is a problem because it cannot be done.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

第１図は本発明の熱処理炉実施例図である。 FIG. 1 is a diagram showing an embodiment of a heat treatment furnace of the present invention.

不活性ガス中において、　　ＩＩ−Ｖｌ族化合物の半導
体蒸着薄膜が形成された基板ｌの前記結晶化促進の熱処
理に当たり、熱処理炉３内へ導入する不活性ガスがシャ
ワー口８を経て導入され、また炉内不活性ガスは炉管の
両端部９から流出する如きガス流を形成させる炉構成と
して熱処理するものである。In an inert gas, during the heat treatment for promoting crystallization of the substrate l on which a semiconductor vapor-deposited film of a II-Vl group compound is formed, the inert gas introduced into the heat treatment furnace 3 is introduced through the shower port 8, and The inert gas in the furnace is heat treated by means of a furnace configuration that forms a gas flow that flows out from both ends 9 of the furnace tube.

〔作　用〕[For production]

光導電膜を形成する熱処理に対して、不活性ガスの流入
口をシャワー状にして、基板全面に垂直方向から均一に
流入させると共に熱処理炉の両端から流出させて該熱処
理雰囲気の一様化が図られる。For heat treatment to form a photoconductive film, the inert gas inlet is shaped like a shower to uniformly flow vertically over the entire surface of the substrate and to flow out from both ends of the heat treatment furnace to make the heat treatment atmosphere uniform. It will be planned.

〔実施例〕〔Example〕

以下１本発明による第１図熱処理炉内ガス流の構成につ
いて説明する。The configuration of the gas flow in the heat treatment furnace shown in FIG. 1 according to the present invention will be explained below.

尚２図中の炉構成に係る従来と同一構成要素には第２図
と同じ参照番号が付与しである。In addition, the same reference numerals as in FIG. 2 are given to the same components as in the conventional furnace configuration in FIG.

実施例図中、炉心部装着になる熱処理治具２収納の光導
電素子形成基板ｌに対して、８は不活性ガスのシャワー
導入口である。炉内のガス導入口８はパイプ１０．及び
開閉弁１）．１２．１３をへて炉外部のガスボンベ５．
６に連結される。In the drawing of the embodiment, reference numeral 8 designates an inert gas shower inlet for a photoconductive element forming substrate l housed in a heat treatment jig 2 which is attached to the reactor core. The gas inlet 8 in the furnace is a pipe 10. and on-off valve 1). 12. Gas cylinder outside the furnace through 13 5.
6.

又、９は熱処理炉３の炉管両端部に設けられるガス導出
口である。Further, reference numeral 9 denotes gas outlet ports provided at both ends of the furnace tube of the heat treatment furnace 3.

シャワー導入口８は熱処理治具２と等しいかまたは該冶
具より大きい寸法とされ、基板全面にわたり均等になる
如く垂直方向からガス導出がされるようにする。The shower inlet 8 has a size equal to or larger than the heat treatment jig 2, so that the gas is led out from the vertical direction so as to be uniform over the entire surface of the substrate.

かくして冶具収納の基板１に対して活性化処理の雰囲気
が均等となり、従来の同処理における炉管の一端から流
入し他端から流出する不活性ガス流の不均衡さに起因す
る基板温度のバラツキが解決されることになる。In this way, the activation processing atmosphere becomes uniform for the substrate 1 housed in the jig, and the variation in substrate temperature caused by the imbalance of the inert gas flow flowing in from one end of the furnace tube and out from the other end in the conventional same processing is eliminated. will be resolved.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明の不活性ガス流構成とすれば
、熱処理炉内部の雰囲気が一様となり。As explained above, with the inert gas flow configuration of the present invention, the atmosphere inside the heat treatment furnace becomes uniform.

従って大型基板に多数集積される光導電素子に対して光
電気変換特性を醸成する素子熱処理の均一化が実現され
ると云う顕著な効果がある。Therefore, there is a remarkable effect that uniform heat treatment of the photoconductive elements, which develops photoelectric conversion characteristics, can be achieved for a large number of photoconductive elements integrated on a large substrate.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の熱処理炉実施例図。 第２図は従来の熱処理炉の構成を示す断面図である。 図中、１は基板、　　３は熱処理炉。 ８は炉内導入のガスシャワー口。 ５と６は不活性ガス（ボンベ）。 及び９は熱処理炉３の炉管端部である。 FIG. 1 is a diagram showing an embodiment of the heat treatment furnace of the present invention. FIG. 2 is a sectional view showing the configuration of a conventional heat treatment furnace. In the figure, 1 is the substrate and 3 is the heat treatment furnace. 8 is the gas shower port that is introduced into the furnace. 5 and 6 are inert gas (cylinder). and 9 are the ends of the furnace tube of the heat treatment furnace 3.

Claims (1)

【特許請求の範囲】[Claims] 不活性ガス中、半導体薄膜が予形成された基板（１）の
処理に際して、熱処理炉（３）内へシャワー状導入口（
８）を経てガス（５）（または（６））が導入され、炉
管端（９）から炉内ガスを導出するガス流れとしたこと
を特徴とする光導電素子の熱処理法。When processing a substrate (1) on which a semiconductor thin film has been preformed in an inert gas, a shower-shaped inlet (
A heat treatment method for a photoconductive element, characterized in that the gas (5) (or (6)) is introduced through the furnace tube end (9), and the gas flow is such that the furnace gas is led out from the furnace tube end (9).