JPS6247980U - - Google Patents
Info
- Publication number
- JPS6247980U JPS6247980U JP14103385U JP14103385U JPS6247980U JP S6247980 U JPS6247980 U JP S6247980U JP 14103385 U JP14103385 U JP 14103385U JP 14103385 U JP14103385 U JP 14103385U JP S6247980 U JPS6247980 U JP S6247980U
- Authority
- JP
- Japan
- Prior art keywords
- contact portion
- socket
- contact
- pair
- contact pieces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims 1
Landscapes
- Connecting Device With Holders (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第1図はこの考案の一実施例によるバーンイン
用ソケツトの断面図、第2図は第1図のソケツト
に半導体装置を挿入し高温での状態を示す断面図
、第3図は従来のバーンイン用ソケツトの断面図
、第4図は第3図のソケツトに半導体装置を挿入
した状態を示す断面図である。
1…絶縁基体、5…半導体装置、6…リード、
11,12…接触片、13…接触部。なお、図中
同一符号は同一又は相当部分を示す。
Fig. 1 is a cross-sectional view of a burn-in socket according to an embodiment of this invention, Fig. 2 is a cross-sectional view showing the state at high temperature when a semiconductor device is inserted into the socket of Fig. 1, and Fig. 3 is a conventional burn-in socket. FIG. 4 is a cross-sectional view of the socket, showing a state in which a semiconductor device is inserted into the socket of FIG. DESCRIPTION OF SYMBOLS 1... Insulating base, 5... Semiconductor device, 6... Lead,
11, 12...Contact piece, 13...Contact part. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
が絶縁基体に複数個所に埋込み支持されており、
半導体装置のリードが上記接触片間の接触部に差
込まれ通電されるようにしたソケツトにおいて、
上記1対の接触片のうち少なくともその一方は形
状記憶合金からなり、常温では上記接触部を開い
た形状をなしており、所定の上昇温度では接触部
を閉じた形状になるようにしたことを特徴とする
バーンイン用ソケツト。 A pair of contact pieces forming a contact portion by opposing surfaces are embedded and supported at multiple locations in the insulating base,
In a socket in which a lead of a semiconductor device is inserted into a contact portion between the contact pieces and is energized,
At least one of the pair of contact pieces is made of a shape memory alloy, and the contact portion has an open shape at normal temperature, and the contact portion has a closed shape at a predetermined temperature rise. Features a burn-in socket.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14103385U JPS6247980U (en) | 1985-09-13 | 1985-09-13 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14103385U JPS6247980U (en) | 1985-09-13 | 1985-09-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6247980U true JPS6247980U (en) | 1987-03-24 |
Family
ID=31048445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14103385U Pending JPS6247980U (en) | 1985-09-13 | 1985-09-13 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6247980U (en) |
-
1985
- 1985-09-13 JP JP14103385U patent/JPS6247980U/ja active Pending
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