JPS6244751A - Electrophotographic sensitive body - Google Patents

Electrophotographic sensitive body

Info

Publication number
JPS6244751A
JPS6244751A JP18463485A JP18463485A JPS6244751A JP S6244751 A JPS6244751 A JP S6244751A JP 18463485 A JP18463485 A JP 18463485A JP 18463485 A JP18463485 A JP 18463485A JP S6244751 A JPS6244751 A JP S6244751A
Authority
JP
Japan
Prior art keywords
layer
curl
electrophotographic photoreceptor
photoreceptor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18463485A
Other languages
Japanese (ja)
Inventor
Saburo Tanaka
三郎 田中
Nobuhiko Fujita
藤田　順彦
Shoji Nakagama
詳治 中釜
Hajime Ichiyanagi
一柳　肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP18463485A priority Critical patent/JPS6244751A/en
Publication of JPS6244751A publication Critical patent/JPS6244751A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/10—Bases for charge-receiving or other layers
    • G03G5/102—Bases for charge-receiving or other layers consisting of or comprising metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/142—Inert intermediate layers
    • G03G5/144—Inert intermediate layers comprising inorganic material

Abstract

PURPOSE:To obtain a flat flexible a-Si photosensitive body which curls less and is flat by providing one or >=2 layers of curling preventive layers so as to sandwich a photoconductive layer consisting of a-Si between said photoconductive layer and electrode, thereby exerting the residual stress in the tension direction to the layer. CONSTITUTION:A polyimide film is used as a substrate and is heated to a softening temp. or below to thoroughly release the gas contained therein. Ni is then deposited on the film to form an electrode layer 21. A silicon nitride film consisting of gaseous silane and gaseous ammonia is formed on the electrode according to a plasma CVD method by RF glow discharge to form the 1st curling preventive layer 23. A mixture composed of gaseous phosphine and gaseous silane (400ppm flow rate mixing ratio of PH3/SiH4) is passed and an Si semiconductor layer of an N-type is deposited thereon to similarly obtain a residual voltage suppressing layer 25 on the 1st curling preventive layer 25 a photoconductive layer layer 22 is formed on the layer 25 by cracking the gaseous silane by the plasma CVD method using RF glow discharge. The silicon nitride film as the 2nd curling preventive layer 24 is further formed thereon.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電子写真感光体に関する。更に詳しくは、光導
電層材料としてアモルファスシリコンを使用し、カール
発生を防止することを可能とした新規な可撓性アモルフ
ァスシリコン電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to electrophotographic photoreceptors. More specifically, the present invention relates to a novel flexible amorphous silicon electrophotographic photoreceptor that uses amorphous silicon as a photoconductive layer material and can prevent curling.

従来の技術 人間社会における情報伝達用媒体の１つとして）　　　
　　　　ハードコピーと呼ばれるものが知られている。Conventional technology (as one of the media for information transmission in human society)
What is known as a hard copy is known.

これは様々な情報の複写物を与えるばかりでなく、ファ
クシミリ、データ通信、電子計算器等の情報機器からの
必要な情報を肉眼で読めるほぼ恒久的な記録物を与える
点でもまた無視できず、様々な情報伝達媒体として社会
に大きな貢献を果している。This cannot be ignored in that it not only provides copies of various information, but also provides an almost permanent record of the necessary information from information devices such as facsimiles, data communications, and electronic calculators that can be read with the naked eye. It has made a great contribution to society as a variety of information transmission media.

このハードコピーの記録方式としては、放電記録方式、
感光記録方式、感熱記録方式、電気・光感応記録方式な
ど様々なものが知られているが、複写物の品位の点から
は光を用いた記録方式に属する電子写真記録方式が最も
有力なものといえよう。こ゛の電子写真記録方式として
は、一旦電子潜像を形成した後普通紙に転写するゼログ
ラフィー法と、特殊紙に直接可視像を形成するエレクト
ロブアックス法がある。前記電子写真記録方式の中では
ゼログラフィー法が最も応用範囲が広いとされ、そこで
使用される感光体について広範な研究がなされている。The recording methods for this hard copy include discharge recording method,
Various types of recording methods are known, including photosensitive recording methods, heat-sensitive recording methods, and electric/light-sensitive recording methods, but in terms of the quality of copies, the electrophotographic recording method, which belongs to the recording methods that use light, is the most promising. You could say that. These electrophotographic recording methods include the xerography method, in which an electronic latent image is once formed and then transferred onto plain paper, and the electrobax method, in which a visible image is directly formed on special paper. Among the electrophotographic recording methods, the xerography method is said to have the widest range of applications, and extensive research has been conducted on the photoreceptors used there.

従来、電子写真感光体として一般的に利用されていた光
導電体材料はＣ，，５ｅＳＴｅなどの単体光導電体、酸
化物系（ＺｎＯ１ＰｂＯ１ＣｄＯ）、硫化物系（ＣｄＳ
、　Ｚｎ５ＳＰｂＳ等）、°セレン化物系（ＺｎＳｅ。Conventionally, photoconductor materials commonly used as electrophotographic photoreceptors include single photoconductors such as C, 5eSTe, oxide-based (ZnO1PbO1CdO), and sulfide-based (CdS).
, Zn5SPbS, etc.), ° selenide-based (ZnSe.

ＣｄＳｅ、　Ｐｂ５ｅ等）、テルル化物系（ＺｎＴｅ、
　ＣｄＴｅ等）等の化合物光導電体の他、ＩｎＳｂ、　
ＩｎＡｓ、　ＧａＡｓ。CdSe, Pb5e, etc.), telluride (ZnTe,
In addition to compound photoconductors such as CdTe, etc.), InSb,
InAs, GaAs.

ＧａＰ等の金属間化合物あるいはアントラセン、フタロ
シアニン、ローダミン等の有機光導電体が利用されてい
た。Intermetallic compounds such as GaP or organic photoconductors such as anthracene, phthalocyanine, and rhodamine have been used.

その構成は、例えばセレンを用いた感光体についてみる
と、基本的には第３図に示すように、金属または紙など
の基板１と、Ｓｅを蒸着法などにより堆積するか、ある
いは分散剤に分散したものを塗布して得られる光導電層
２とからなっている。For example, when looking at a photoreceptor using selenium, its structure is basically as shown in Fig. 3, in which Se is deposited on a substrate 1 made of metal or paper, and Se is deposited by vapor deposition or in a dispersant. It consists of a photoconductive layer 2 obtained by coating a dispersed material.

また、紙を基板とする場合には電極層が必要とされる。Further, when paper is used as a substrate, an electrode layer is required.

一方、特に太陽電池において、研究、開発が進められて
いる新材料としてアモルファスシリコン（以下、簡単の
ためにａ−３ｉという）が知られており、このものは薄
膜として容易に形成でき、製造工程が簡単であり、大面
積化が容易であるなどといった各種の興味ある利点を有
しており、大きな注目をあびている。On the other hand, amorphous silicon (hereinafter referred to as a-3i for simplicity) is known as a new material that is currently being researched and developed, especially in solar cells. It has various interesting advantages such as being simple and easy to increase the area, and is attracting a lot of attention.

最近、このａ−３ｉが耐熱性、耐久性に優れ、かつ毒性
も低いことから、電子写真感光体における光導電層材料
として利用すべく、活発な研究開発が進められている。Recently, since this a-3i has excellent heat resistance, durability, and low toxicity, active research and development has been carried out to utilize it as a photoconductive layer material in electrophotographic photoreceptors.

また、多くの場合、感光体の形状はアルミニウム合金な
どを中心とするドラム状であったが、最近では装置の小
型化が可能であり、また連続生産可能である等の利点か
ら、シート状の可撓性ａ−８１感光体の実現に力が注が
れている。In addition, in many cases, the shape of the photoreceptor was drum-shaped, mainly made of aluminum alloy, etc., but recently, sheet-shaped photoreceptors have become available due to the advantages such as miniaturization of equipment and continuous production. Efforts are being made to realize a flexible A-81 photoreceptor.

この電子写真の原理は、簡単に述べると、第４図（ａ）
〜（ｄ）に示したように、導電性基板１０上に光導電性
材料の層１１を設けた感光膜１２を暗所にてコロナ放電
によって一様に帯電させ（第４図（ａ）参照）、次いで
第４図ら〕に示すようにパターン１３を介して光１４を
照射することにより受光部分の電荷を光導電現像により
減衰させて静電潜像を得、これにトナー１５と呼ばれる
現像粉末を静電吸着させ（第４図（Ｃ）参照）、次いで
トナー粉末を転写電極により普通紙１６に転写しく第４
図（ｄ）参照）、加熱溶融または加圧により定着するこ
とからなる。The principle of this electrophotography can be briefly described as shown in Figure 4(a).
As shown in FIG. 4(d), a photoresist film 12 having a layer 11 of photoconductive material provided on a conductive substrate 10 is uniformly charged by corona discharge in a dark place (see FIG. 4(a)). ), then, as shown in FIG. 4 et al., by irradiating light 14 through the pattern 13, the charge on the light-receiving area is attenuated by photoconductive development to obtain an electrostatic latent image, and a developing powder called toner 15 is applied to this latent image. is electrostatically attracted (see FIG. 4(C)), and then the toner powder is transferred onto the plain paper 16 by the transfer electrode.
(see Figure (d)), and is fixed by heating and melting or applying pressure.

しかしながら、可撓性ａ−３ｉ感光体はａ　−３ｉ部分
の残留応力により、弓なりにカールするとい好ましくな
い現象があり、取扱が難しいばかりでなく、ａ−３ｉ部
分の剥離の原因にもなるという大きな欠点があった。ま
た、ａ　−Ｓｉ膜に可撓性を持たせるためにはその膜厚
を薄くする必要があるが、膜厚を薄くすれば、逆に十分
な、所謂感光体特性が得られないという欠点があった。However, the flexible A-3i photoreceptor has an undesirable phenomenon of curling in an arched shape due to residual stress in the A-3i portion, which is not only difficult to handle but also causes peeling of the A-3i portion. There was a big drawback. In addition, in order to make the a-Si film flexible, it is necessary to reduce its thickness, but if the film thickness is made thin, it has the disadvantage that sufficient photoreceptor characteristics cannot be obtained. there were.

発明が解決しようとする問題点 上記のように、電子写真感光体の光導電層材料として、
最近ａ−３ｉの利用が注目されている。感光膜として特
に要求される性質は電荷を保持する必要性から高抵抗で
あり、しかも光導電性に優れていること、即ち光による
キャリヤ励起効率が高く、その移動度並びにライフタイ
ムが大きいことなどである。この中で、抵抗については
ａ−３ｉはＳｅなどに比して小さいが、可視域で高い感
度を示すなどの興味深い特性を有しており、その実用化
に向けて広範な研究が進められている。Problems to be Solved by the Invention As mentioned above, as a photoconductive layer material for an electrophotographic photoreceptor,
Recently, the use of A-3i has been attracting attention. The properties particularly required for a photoresist film include high resistance due to the need to retain charge, and excellent photoconductivity, that is, high carrier excitation efficiency by light, and long mobility and lifetime. It is. Among these, a-3i has a smaller resistance than Se, etc., but it has interesting characteristics such as high sensitivity in the visible range, and extensive research is being carried out toward its practical application. There is.

従来の可撓性のａ−３ｉ感光体は第２図に示したように
、基板２０と、その上に設けられた電極層２１および光
導電層２２とを含む。ここで基板２０としては絶縁性、
導電性いずれの材料で作製することもでき、導電性材料
で形成した場合には電極２１を設ける必要はなく、基板
自体が電極としても機能し得る。A conventional flexible A-3I photoreceptor, as shown in FIG. 2, includes a substrate 20 with an electrode layer 21 and a photoconductive layer 22 disposed thereon. Here, the substrate 20 is insulating,
It can be made of any conductive material, and if it is made of a conductive material, it is not necessary to provide the electrode 21, and the substrate itself can function as an electrode.

ところで、このａ−５ｉを感光体として用いる場合には
、上記のように、ａ−３ｉの残留応力に基く変形ひいて
はａ−３ｉ層の剥離の問題、および可撓性を確保すべく
薄層化する必要があるために、感光体特性の劣化を招く
という問題などが実用化する際の大きな障害となってい
る。従って、これらの難点を解決し得る新たな構成の可
撓性ａ　−３ｉ電子写真感光体を開発することが望まれ
ており、また、これによってａ　−３ｉ感光体の実用化
が促進されるので、上記問題を解決することは電子写真
の今後の発展にとって極めて意義あることである。By the way, when this a-5i is used as a photoreceptor, as mentioned above, there are problems with deformation due to residual stress of a-3i and peeling of the a-3i layer, and thinning of the layer to ensure flexibility. Because of the need to do so, problems such as deterioration of photoreceptor characteristics are a major obstacle to practical application. Therefore, it is desired to develop a flexible a-3i electrophotographic photoreceptor with a new configuration that can solve these difficulties, and this will promote the practical application of the a-3i photoreceptor. , Solving the above problems is extremely significant for the future development of electrophotography.

そこで、本発明の目的も、このような諸欠点を示すこと
のない改良された可撓性ａ　−３ｉ電子写真感光体を提
供することにある。Therefore, it is an object of the present invention to provide an improved flexible a-3i electrophotographic photoreceptor that does not exhibit such drawbacks.

問題点を解決するための手段 本発明者等は可撓性ａ　−３ｉ感光体における従来技術
の上記の如き現状に鑑みて、上記諸欠点を示すことのな
い新しい構成の可撓性ａ　−３ｉ感光体を開発すべく種
々検討を重ねた結果、従来の欠点がａ−３ｉ光導電層の
残留応力並びにａ　−３ｉ層の膜厚が小さいことに起因
するものであることを念頭におき、これらが特定のカー
ル防止層および残留電圧抑制層を設けることにより有利
に解決し得ることを見出し、本発明を完成した。Means for Solving the Problems In view of the above-mentioned current state of the prior art in the flexible a-3i photoreceptor, the present inventors have developed a flexible a-3i of a new configuration that does not exhibit the above-mentioned drawbacks. As a result of various studies in order to develop a photoreceptor, we have kept in mind that the drawbacks of the conventional photoconductive layer are due to the residual stress of the a-3i photoconductive layer and the small film thickness of the a-3i layer, and we have developed these photoreceptors. The present invention has been completed based on the discovery that the problem can be advantageously solved by providing a specific anti-curl layer and a specific residual voltage suppressing layer.

即ち、本発明の電子写真感光体は基板と該基板上に設け
られた電極層および光導電層をこの順序で有する電子写
真感光体であって、前記電極層と光導電層との間に第１
のカール防止層および残留電圧抑制層をこの順序で設け
たことを特徴とするものである。That is, the electrophotographic photoreceptor of the present invention is an electrophotographic photoreceptor having a substrate, an electrode layer provided on the substrate, and a photoconductive layer in this order, and a third layer is provided between the electrode layer and the photoconductive layer. 1
The anti-curl layer and the residual voltage suppressing layer are provided in this order.

まず、支持体としてはポリイミドの他、可撓性を付与し
得る程度の厚さく通常ｌ　ｍｍ以下）を有する高分子フ
ィルム、ステンレスなどの金属帯が主として用いられる
が、これらに制限されず、従来公知の任意の材料を使用
し得る。First, as a support, in addition to polyimide, a polymer film having a thickness sufficient to impart flexibility (usually 1 mm or less), and a metal band such as stainless steel are mainly used, but the support is not limited to these. Any known material may be used.

次に、電極層はＮｉ１ステンレススチール、Ａ１、Ｃｒ
Ｓ　Ａｇｓ　　八ｕ、ＩＴＯ１Ｓｎ○２　　、Ｃｕ、Ｐ
ｄ、ＳｎＳ　Ｔｔなどをいずれも使用することができ、
これらは真空蒸着法、イオンブレーティング法、イオン
化蒸着、スパッタリング法など公知の膜形成技術のいず
れかに従って基板上に堆積される。Next, the electrode layer is Ni1 stainless steel, A1, Cr
S Ags 8u, ITO1Sn○2, Cu, P
d, SnS Tt, etc. can be used.
These are deposited on the substrate according to any of the known film forming techniques such as vacuum evaporation, ion blating, ionization vapor deposition, and sputtering.

尚、基板として金属帯などの導電性材料を用いる場合に
は、既に述べたようにこの電極層は別に設ける必要はな
く、基板が電極の機能をも果たすことになる。Note that when a conductive material such as a metal strip is used as the substrate, there is no need to separately provide this electrode layer as described above, and the substrate also functions as an electrode.

電極層の厚さとしては１，００℃〜５．０００人の範囲
、好ましくは１．０００〜２．０００　Ａの範囲内とす
ることが望ましい。上記下限に満たない場合には感光体
特性を十分に確保できず、また上限を越える場合には使
用中にクラックを発生するなどの問題があるためにいず
れも避けるべきである。The thickness of the electrode layer is desirably in the range of 1,00°C to 5,000 Å, preferably in the range of 1,000 to 2,000 Å. If it is less than the above lower limit, sufficient photoreceptor characteristics cannot be ensured, and if it exceeds the upper limit, problems such as cracks may occur during use, so both should be avoided.

更に、カール防止層については、前記第１のカール防止
層の他、前記光導電層上に第２のカール防止層を更に設
けることもできる。これらは窒化ケイ素、酸化珪素、ま
たはダイヤモンド系炭素であり得、また、これらが酸素
を含んでいてもよく、各種公知の薄膜形成技術に従って
得ることができる。例えば、カール防止層を窒化ケイ素
膜とする場合には反応ガスとしてシラン（ＳｉＨ，）お
よびアンモニア（ＮＨ３）を使用してＤＣ，ＲＦ等のグ
ロー放電によるプラズマＣＶＤ法などに従って膜形成さ
れる。Furthermore, regarding the anti-curl layer, in addition to the first anti-curl layer, a second anti-curl layer may be further provided on the photoconductive layer. These may be silicon nitride, silicon oxide, or diamond-based carbon, which may also contain oxygen, and may be obtained according to various known thin film formation techniques. For example, when the anti-curl layer is a silicon nitride film, the film is formed using silane (SiH, ) and ammonia (NH3) as reactive gases and according to a plasma CVD method using glow discharge such as DC or RF.

また、残留電圧抑制層は、カール防止層を設けたことに
より、カール発生防止を達成する反面、残留電圧を上げ
、感光体特性を阻害するのでこの点を補償するために設
けられるものであって、感光体の帯電特性に応じてＮ型
半導体またはＰ型半導体の中から選ばれ、例えばＮ型の
Ｓｉ半導体層、Ｐ型のＳｉ半導体層を挙げることができ
、夫々Ｎ型ドーパント源（ホスフィン：ＰＨ３など）と
シランガスとを用いたグロー放電によるプラズマＣＶＤ
ｊ　　　　　　　法あるいはＰ型ドーパント源（ジボラ
ン：Ｂ２Ｈ６など）とシランガスとを用いた同様なプラ
ズマＣＶＤ法などによって形成される。これらの形成の
際のＰ　Ｈ３／　Ｓ　Ｉ　Ｈ４およびＢ２Ｈ，／ＳｉＨ
＜の流量混合比は夫々５０〜１．０００ｐＨｍ、好まし
くはｌＯＯ〜５００ｐｐｍおよび５０〜１０．０００ｐ
ｐｍ、好ましくは１００〜１、０００ｐｐｍである。こ
の混合比は上記下限に満たない場合には十分な残留電圧
の低減効果が得られず、また上限を越える場合には、欠
陥を増加させることになり、感光体特性が低下する。Further, the residual voltage suppressing layer is provided to compensate for the fact that although the anti-curling layer achieves prevention of curling, it increases the residual voltage and impairs the characteristics of the photoreceptor. , selected from an N-type semiconductor or a P-type semiconductor depending on the charging characteristics of the photoreceptor, such as an N-type Si semiconductor layer and a P-type Si semiconductor layer, each containing an N-type dopant source (phosphine: Plasma CVD using glow discharge using PH3, etc.) and silane gas
J method or a similar plasma CVD method using a P-type dopant source (such as diborane: B2H6) and silane gas. P H3/ S I H4 and B2H, /SiH during these formations
The flow rate mixing ratio of < is 50 to 1.000 pHm, preferably lOO to 500 ppm and 50 to 10.000 pHm, respectively.
pm, preferably 100 to 1,000 ppm. If this mixing ratio is less than the above lower limit, a sufficient residual voltage reduction effect cannot be obtained, and if it exceeds the upper limit, defects will increase and the photoreceptor characteristics will deteriorate.

最後に、光導電層としてのａ−３ｉ層はシラン、ジシラ
ン、四フッ化シリコンなどを原料ガスとするグロー放電
によるプラズマＣＶＤ法の他、スパッタリング法、イオ
ンブレーティング法などによって形成することができる
。更に、ａ　−３ｉ層の高抵抗化を図る目的でホウ素等
の微量ドーピング（シランガスに対して数ｐｐｍ〜１０
ｐｐｍのＢ、Ｈ６を使用）などを行うことも本発明の範
囲内にはいるものと理解すべきである。Finally, the a-3i layer as a photoconductive layer can be formed by a plasma CVD method using glow discharge using silane, disilane, silicon tetrafluoride, etc. as a raw material gas, as well as by a sputtering method, an ion blating method, etc. . Furthermore, in order to increase the resistance of the a-3i layer, a trace amount of doping with boron, etc. (several ppm to 10 ppm to silane gas) is added.
It is to be understood that it is within the scope of the present invention to perform procedures such as using ppm of B, H6), etc.

この光導電層の厚さは一般に２μｍ〜６μｍ１好ましく
は２μｍ〜４μｍの範囲内であり、薄すぎると十分な所
謂感光体特性を確保できず、また厚すぎてもクラック発
生などの欠点があるのでいずれも避けるべきである。The thickness of this photoconductive layer is generally in the range of 2 μm to 6 μm, preferably 2 μm to 4 μm; if it is too thin, sufficient so-called photoreceptor characteristics cannot be secured, and if it is too thick, there are drawbacks such as cracking. Both should be avoided.

添付第１図（ａ）および（ハ）は本発明の電子写真感光
体の模式的な断面図であり、第１図（ａ）はカール防止
層を電極と光導電層との間に１層だけ設けた例を示し、
また第１図（ハ）は光導電層をはさむように２層のカー
ル防止層を設けた例を示す。第１および第２カール防止
層２３．２４および残留電圧抑制層２５以外は第２図に
示した従来の感光体と同様であり、同一の番号を付して
説明を省略する。また、参考のために第１図（Ｃ）には
第１図（ハ）におけるような態様で、カール防止層のみ
を付与した例を示した。この例は残留電圧抑制層を除い
た以外は第２図（社）とまったく同様であるので、同一
の参照番号を付して説明に代える。Attached FIGS. 1(a) and 1(c) are schematic cross-sectional views of the electrophotographic photoreceptor of the present invention, and FIG. 1(a) shows one anti-curl layer between the electrode and the photoconductive layer. Here is an example where only
Further, FIG. 1(c) shows an example in which two anti-curl layers are provided so as to sandwich a photoconductive layer. The components other than the first and second anti-curl layers 23, 24 and the residual voltage suppressing layer 25 are the same as the conventional photoreceptor shown in FIG. 2, so the same numbers are given and the explanation will be omitted. For reference, FIG. 1(C) shows an example in which only an anti-curl layer is provided in the manner shown in FIG. 1(c). Since this example is completely the same as FIG. 2 (Company) except for the removal of the residual voltage suppression layer, the same reference numerals will be given and the explanation will be omitted.

前記のような配置となるようにカール防止層および残留
電圧抑制層を設けることにより、カールの発生、その結
果としてのａ　−３ｉ層の剥離をほぼ完全に防止でき、
優れた感光体特性を有する製品が得られる。この製品は
電子複写機、レーザプリンターなどにおいて有利に用い
られる。By providing the curl prevention layer and the residual voltage suppression layer in the above-described arrangement, the occurrence of curl and the resulting peeling of the a-3i layer can be almost completely prevented,
A product with excellent photoreceptor properties is obtained. This product is advantageously used in electronic copiers, laser printers, etc.

−作月 以上述べたように、可撓性電子写真感光体、特にａ−３
ｉを感光体として使用する場合には、解決しなければな
らない大きな二つの問題があった。- As mentioned above, flexible electrophotographic photoreceptors, especially a-3
When using i as a photoreceptor, there were two major problems that had to be solved.

しかしながら、本発明の電子写真感光体によれば上記問
題はいずれも解決できる。即ち、電極と光導電層との間
に単一のカール防止層を、あるいは光導電層をサンドイ
ッチ状にはさむ２層のカール防止層を設けることにより
解決された。このようにカール防止層によりカール発生
を防止するためには、該防止層の形成方法膜厚等を正し
く調節する必要がある。However, according to the electrophotographic photoreceptor of the present invention, all of the above problems can be solved. That is, the problem was solved by providing a single anti-curl layer between the electrode and the photoconductive layer, or by providing two anti-curl layers sandwiching the photoconductive layer. In order to prevent the occurrence of curl by using the anti-curl layer as described above, it is necessary to properly adjust the method for forming the anti-curl layer, the thickness, etc.

例えば、ａ−３ｉ悪感光は１５０〜２５０℃で成膜され
た場合に、感光体としての電気的、機械的特性が最良で
あるとされているが、このような条件下で作製された膜
は圧縮方向に残留応力を残しており、これがカール発生
要因となっているものと思われる。For example, it is said that a-3i photoreceptor has the best electrical and mechanical properties as a photoreceptor when it is formed at 150 to 250°C. leaves residual stress in the compression direction, which is thought to be the cause of curling.

そこで、引張り方向に残留応力を残すように、ａ−３ｉ
層と重ねてカール防止層を形成すれば、ａ−３ｉ膜およ
びカール防止膜の有する圧縮方向および引張り方向の応
力が相互に相殺され、カール防止が可能となるものと思
われる。この層は第１層のみでも有効であるが、光導電
層をはさむ２層で構成することにより、より大きな効果
を期待できる。Therefore, in order to leave residual stress in the tensile direction, a-3i
It is thought that if an anti-curl layer is formed by stacking the two layers, the stresses in the compressive direction and the tensile direction of the a-3i film and the anti-curl film will cancel each other out, making it possible to prevent curling. Although this layer is effective with only the first layer, a greater effect can be expected by constructing it with two layers sandwiching the photoconductive layer.

ところで、カール防止層に引張り方向の応力を残すため
には、例えば窒化ケイ素膜を使用する場合には、成膜を
１００〜２５０℃の範囲内で行うことが必要である。こ
の条件は本発明において重要であり、臨界的なものであ
る。By the way, in order to leave stress in the tensile direction in the anti-curl layer, when using a silicon nitride film, for example, it is necessary to form the film within the range of 100 to 250°C. This condition is important and critical in the present invention.

また、カール防止層の厚さも臨界的であり、第１のカー
ル防止層については１０〜８００人、好ましくは１００
〜６００人の範囲内であり、一方第２のカール防止層に
ついては１０〜６００人、好ましくは１５０〜２５０人
の範囲内である。このカール防止層の厚さは２．０００
Å以下であれば厚い程カール防止効果の点では有効であ
るが、厚ければ厚い程感光体特性に悪影響を及ぼし、特
に残留電圧を大きくし、複写の際の“地かぶり”の原因
となることから、無制限に大きくすることはできない。The thickness of the anti-curl layer is also critical, with the thickness of the first anti-curl layer being 10 to 800, preferably 100.
~600 people, while for the second anti-curl layer it is in the range 10-600, preferably 150-250 people. The thickness of this anti-curl layer is 2.000
The thicker it is, the more effective it is in terms of preventing curl, but the thicker it is, the more it adversely affects the characteristics of the photoreceptor, especially increasing the residual voltage and causing "background fog" during copying. Therefore, it cannot be increased without limit.

そこで、膜厚と、感光体特性およびカール防止効果とを
詳細に検討した結果、上記範囲がよいことを見出した。Therefore, as a result of a detailed study of the film thickness, photoreceptor characteristics, and curl prevention effect, it was found that the above range is preferable.

かくして、カール防止層を設けることにより、従来見ら
れたカール発生並びにａ　−３ｉ層の剥離の問題は解決
されたが、このカール防止層の存在により残留電圧は逆
に増大する。これは上記の如く感光体特性にとって不利
であり、“地かぶり”などの新たな問題を提示する。こ
の残留電圧が増大する原因は、カール防止層と光導電層
との間に多数の欠陥が存在し、キャリヤの移動を防げる
ことにあるものと考えられる。Thus, by providing an anti-curl layer, the conventional problems of curl generation and peeling of the a-3i layer are solved, but the presence of this anti-curl layer conversely increases the residual voltage. As mentioned above, this is disadvantageous to the photoreceptor characteristics and presents new problems such as "background fog". It is thought that the reason for this increase in residual voltage is that there are many defects between the anti-curl layer and the photoconductive layer, which prevent the movement of carriers.

そこで、本発明においてはこの欠陥を減少させ、キャリ
ヤの移動をスムーズにし、その結果残留電圧を減じる効
果を有するＮ型またはＰ型の半導体層を設けた。このよ
うな残留電圧抑制層は上記のような機能の他に、整流効
果を有するために、′表面電荷の保持力を増大させる機
能をも有している。Therefore, in the present invention, an N-type or P-type semiconductor layer is provided which has the effect of reducing these defects, smoothing the movement of carriers, and, as a result, reducing the residual voltage. In addition to the above-mentioned functions, such a residual voltage suppressing layer has a rectifying effect and therefore also has a function of increasing surface charge retention.

この保持力は感光体特性の中でも重要なものであり、従
って製品々位は一層良好なものとなることがわかる。It can be seen that this holding power is one of the most important characteristics of the photoreceptor, and therefore the products are even better.

この残留電圧抑制層は、１００〜２．０００　Ａ　、好
ましくは４００〜１．０００　Ａの範囲内の厚さとする
ことが望ましい。This residual voltage suppression layer desirably has a thickness in the range of 100 to 2.000 A, preferably 400 to 1.000 A.

上記下限に満たない場合には十分な残留電圧の低減効果
が得られず、また上限を越える場合には熱的なキャリア
ーの発生源となり、十分な受容型。If the lower limit is less than the above, a sufficient residual voltage reduction effect cannot be obtained, and if the upper limit is exceeded, it becomes a source of thermal carrier generation and is not a sufficient receptive type.

圧が得られなくなる。Pressure cannot be obtained.

かくして、本発明の感光体は電子写真方式の、特にゼロ
グラフィー法用あるいはレーザープリンター用の感光体
として極めて有用であると思われる。Thus, the photoreceptor of the present invention is considered to be extremely useful as a photoreceptor for electrophotography, particularly for xerography or laser printers.

実施例 以下、実施例により本発明の電子写真感光体の製造例を
示すが、本発明の範囲はこれによって何等制限されない
。EXAMPLES Hereinafter, examples of manufacturing the electrophotographic photoreceptor of the present invention will be shown in Examples, but the scope of the present invention is not limited thereby.

まず、支持体としては１２５μｍ厚のポリイミドフィル
ムを使用し、これを軟化温度以下で２時間加熱して、含
有ガスを充分に放出させた後、この上に真空蒸着法によ
り基板温度１００℃、真空度３ｘ１０−’Ｔｏｒｒなる
条件下で、Ｎｉを１．５００人堆積させ電極層とした。First, a polyimide film with a thickness of 125 μm is used as a support, and after heating this for 2 hours below the softening temperature to sufficiently release the gas contained therein, a polyimide film with a substrate temperature of 100 °C and a vacuum An electrode layer was formed by depositing 1,500 Ni under conditions of 3 x 10 Torr.

次いで、ＲＦグロー放電によるプラズマＣＶＤ法に従っ
て、シランガスおよびアンモニアガスとから窒化ケイ素
膜を５００人厚で該電極上に形成（成膜条件：基板温度
２００℃；真空度０．３Ｔｏｒｒ）　Ｌ／、第１カール
防止層とした。Next, according to the plasma CVD method using RF glow discharge, a silicon nitride film is formed from silane gas and ammonia gas to a thickness of 500 mm on the electrode (film forming conditions: substrate temperature 200°C; vacuum degree 0.3 Torr). 1 as an anti-curl layer.

更に、該第１カール防止層上に、同様にグロー放電によ
るプラズマＣＶＤ法に従って、基板温度２００℃、真空
度０．３Ｔｏｒｒにて、ホスフィンガスとシランガスと
の混合物（Ｐ　Ｈ３／　Ｓ　ｉ　Ｈ４の流量混合比＝　
４００ｐｐｍ　）を流し、Ｎ型のＳｉ半導体層を５００
　Ａの膜厚で堆積し、残留電圧抑制層を得た。Further, a mixture of phosphine gas and silane gas (P H3 / S i H4 flow rate Mixing ratio =
400 ppm), and the N-type Si semiconductor layer was deposited at 500 ppm.
The film was deposited to a thickness of A to obtain a residual voltage suppressing layer.

光伝導層は基板温度２００℃、真空度０．２Ｔｏｒｒな
る条件でのＲＦグロー放電によるプラズマＣＶＤ法によ
ってシランガスを分解し、膜厚２μｍで前記残留電圧抑
制層上に形成した。The photoconductive layer was formed on the residual voltage suppressing layer to a thickness of 2 μm by decomposing silane gas by plasma CVD using RF glow discharge at a substrate temperature of 200° C. and a vacuum of 0.2 Torr.

かくして、第１図（ａ）に示したようなカール防止層を
電極と残留電圧抑制層との間に一層だけ有する可撓性ａ
−３ｉの電子写真用感光体を得た（サンプルｌ）。Thus, a flexible a having only one anti-curl layer between the electrode and the residual voltage suppressing layer as shown in FIG.
-3i electrophotographic photoreceptor was obtained (sample 1).

更に、該電子写真感光体の光導電層上に上記第１のカー
ル防止層の形成操作と同様にして、膜厚２００人で第２
のカール防止層としての窒化ケイ素膜を形成し、第１図
面のような構成の電子写真感光体を得た（サンプル２）
。Furthermore, a second anti-curl layer was formed on the photoconductive layer of the electrophotographic photoreceptor in the same manner as the first anti-curl layer.
A silicon nitride film was formed as a curl prevention layer to obtain an electrophotographic photoreceptor having a structure as shown in the first drawing (Sample 2).
.

更に、参考例として、２層のカール防止層のみを有し、
残留電圧抑制層を含まない第１図（Ｃ）に示すような構
成の感光体（サンプル３）、および第２図に示したよう
なカール防止層および残留電圧抑制層のいずれも有さな
い従来の感光体（サンプル４）を上記と同様にして作製
した。Furthermore, as a reference example, it has only two anti-curl layers,
A photoreceptor (sample 3) having the structure shown in FIG. 1(C) that does not include a residual voltage suppressing layer, and a conventional photoreceptor having neither an anti-curl layer nor a residual voltage suppressing layer as shown in FIG. A photoreceptor (Sample 4) was prepared in the same manner as above.

以上のようにして得られた４種の感光体につき各種物性
を測定し、結果を以下の第１表に示す。Various physical properties were measured for the four types of photoreceptors obtained as described above, and the results are shown in Table 1 below.

第１表において、カールの測定は、第５図に示すように
、成膜した感光体から試験片（寸法３ＱｃｍＸ３０ｃｍ
）を切出し、これを第５図のように平面上）　　　　　
　　に置き、その際の幅Ａと高さＢの比Ｂ／Ａでカール
の程度を決定した。In Table 1, the curl measurement was performed using a test piece (dimensions 3Qcm
) and place it on a plane as shown in Figure 5).
The degree of curl was determined by the ratio B/A of width A and height B at that time.

第１表 第１表の結果から明らかな如く、本発明の電子写真感光
体（サンプル１および２）においては、従来のサンプル
４と比較してカールの程度、耐久性、受容電圧等測定し
たすべての特性において勝っており、本発明の有用性を
理解することができる。尚、カール防止層のみを付与し
、残留電圧抑制層を設けていない参考例（サンプル３）
についてはＢ／Ａ、即ちカールの程度においては一層の
み設けたサンプル１よりも改善されたが、受容電圧に劣
り、残留電圧が著しく大きくなっていることがわかる。Table 1 As is clear from the results shown in Table 1, the electrophotographic photoreceptors of the present invention (Samples 1 and 2) were found to have a higher degree of curl, durability, accepted voltage, etc. compared to the conventional Sample 4. It is possible to understand the usefulness of the present invention. In addition, a reference example (sample 3) in which only an anti-curl layer was provided and no residual voltage suppression layer was provided.
It can be seen that although B/A, that is, the degree of curl, was improved over Sample 1 in which only one layer was provided, the received voltage was inferior and the residual voltage was significantly large.

この事実から、本発明の電子写真感光体における残留電
圧抑制層の有用性を認識することができる。即ち、この
層の介在により残留電圧が低下すると共に、受容電圧も
著しく改善された。From this fact, the usefulness of the residual voltage suppressing layer in the electrophotographic photoreceptor of the present invention can be recognized. That is, the presence of this layer lowered the residual voltage and also significantly improved the received voltage.

発明の効果 以上、詳細に述べたように、本発明の可撓性ａ−３ｉの
電子写真感光体によれば、ａ　−５ｉからなる光導電層
と電極との間に一層の、あるいは該光導電層をサンドイ
ッチ型にはさむように２層のカール防止層を設け、該層
に引張り方向の残留応力を付与したことにより、ａ　−
３ｉ層の有する圧縮方向の残留応力を相殺することが可
能となり、カールの少ないフラットな可撓性ａ　−Ｓｉ
感光体を提供することが可能となった。Effects of the Invention As described in detail above, according to the flexible a-3i electrophotographic photoreceptor of the present invention, there is a layer or a layer of the photoconductive layer between the a-5i photoconductive layer and the electrode. By providing two anti-curl layers sandwiching the conductive layer and applying residual stress in the tensile direction to the layers, a -
It becomes possible to offset the residual stress in the compressive direction of the 3i layer, resulting in a flat flexible a-Si with less curling.
It became possible to provide photoreceptors.

その結果、従来の可撓性ａ−９ｉ感光体にみられたよう
な残留応力によるカール発生に伴うａ　−３ｉ層の剥離
も当然防止され、その結果感光体の耐久性はほぼ倍量上
に増大された。As a result, peeling of the A-3I layer caused by curling due to residual stress, which was observed in conventional flexible A-9I photoreceptors, is naturally prevented, and as a result, the durability of the photoreceptor is almost doubled. increased.

ところで、前記のようにカール防止層の付与によりカー
ル発生は効果的に防止されるが、逆に残留電圧の増大が
みられる。これは、感光体の帯電特性に応じてＮ型また
はＰ型半導体層からなる抑制層を、光導電層とカール防
止層との間に介在させることによって防止できた。また
、該抑制層は光導電層とカール防止層との間の界面状態
をも改善する効果を有し、そのためにキャリヤの移動が
スムーズになり、さらに整流効果を有することから、そ
の他の感光体特性も大巾に改善された。Incidentally, although curling can be effectively prevented by providing an anti-curling layer as described above, on the contrary, an increase in residual voltage is observed. This can be prevented by interposing a suppression layer consisting of an N-type or P-type semiconductor layer between the photoconductive layer and the curl prevention layer depending on the charging characteristics of the photoreceptor. In addition, the suppression layer also has the effect of improving the interface state between the photoconductive layer and the anti-curling layer, thereby smoothing the movement of carriers, and also has a rectifying effect, which makes it suitable for use with other photoreceptors. The characteristics have also been greatly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）〜（Ｃ）は本発明の可撓性ａ　−３ｉ電子
写真感光体の２種の好ましい態様（ａおよびｂ）並びに
参考としてのカール防止層のみを設けた例（ｃ）を示す
模式的な断面図であり、 第２図は従来のａ　−５ｉ感光体を説明するための第１
図と同様な図であり、 第３図は古典的な電子写真感光体の構成を説明するため
の模式的な断面図であり、 第４図（ａ）〜（ｄ）はゼログラフィー法による感光体
の作用を説明するための図であり、 第５図はカールの程度の測定法を説明するための模式的
な図である。 （主な参照番号） １・・基板、　２・・光導電層、 １０・・導電性基板、　１１・・ａ　−３ｉ層、１２・
・感光膜、　１３・・パターン、１４・・光、　１５・
・トナー、　１６・・普通紙、２０・・基板、　２１・
・電極、　２２・・光導電層、２３．２４・・カール防
止層、 ２５・・残留電圧抑制層 特許出願人　　住友電気工業株式会社 代　理　人　　弁理士　　新居　正彦 第１図 第２図　　　２０・！Ｉ根 第３図　　　　　第５図Figures 1 (a) to (C) show two preferred embodiments (a and b) of the flexible a-3i electrophotographic photoreceptor of the present invention and an example (c) in which only an anti-curl layer is provided as a reference. FIG. 2 is a schematic cross-sectional view showing a conventional a-5i photoreceptor.
Figure 3 is a schematic cross-sectional view for explaining the configuration of a classical electrophotographic photoreceptor, and Figures 4 (a) to (d) are photosensitive FIG. 5 is a diagram for explaining the action of the body, and FIG. 5 is a schematic diagram for explaining a method for measuring the degree of curl. (Main reference numbers) 1..Substrate, 2..Photoconductive layer, 10..Conductive substrate, 11..a-3i layer, 12..
・Photoresist film, 13.. Pattern, 14.. Light, 15.
・Toner, 16.. Plain paper, 20.. Substrate, 21.
- Electrode, 22... Photoconductive layer, 23. 24... Anti-curl layer, 25... Residual voltage suppression layer Patent applicant Sumitomo Electric Industries Co., Ltd. Representative Patent attorney Masahiko Arai Figure 1 Figure 2 20.! I root Fig. 3 Fig. 5

Claims (10)

【特許請求の範囲】[Claims] （１）基板と、その上に設けられた電極、第１のカール
防止層、残留電圧抑制層および光導電層をこの順序で有
することを特徴とする電子写真感光体。(1) An electrophotographic photoreceptor comprising a substrate, an electrode provided thereon, a first curl prevention layer, a residual voltage suppression layer, and a photoconductive layer in this order. （２）前記光導電層上に第２のカール防止層を設けたこ
とを特徴とする特許請求の範囲第１項記載の電子写真感
光体。(2) The electrophotographic photoreceptor according to claim 1, further comprising a second anti-curl layer provided on the photoconductive layer. （３）前記カール防止層が窒化珪素、酸化珪素、または
ダイヤモンド系炭素であることを特徴とする特許請求の
範囲第１項または第２項記載の電子写真感光体。(3) The electrophotographic photoreceptor according to claim 1 or 2, wherein the curl prevention layer is made of silicon nitride, silicon oxide, or diamond-based carbon. （４）前記第１のカール防止層の厚みが１０〜８００Å
の範囲内であることを特徴とする特許請求の範囲第３項
記載の電子写真感光体。(4) The thickness of the first anti-curl layer is 10 to 800 Å
The electrophotographic photoreceptor according to claim 3, wherein the electrophotographic photoreceptor is within the range of . （５）前記第２のカール防止層の厚みが１０〜６００Å
の範囲内であることを特徴とする特許請求の範囲第３項
記載の電子写真感光体。(5) The thickness of the second anti-curl layer is 10 to 600 Å
The electrophotographic photoreceptor according to claim 3, wherein the electrophotographic photoreceptor is within the range of . （６）前記カール防止層が窒化ケイ素であることを特徴
とする特許請求の範囲第３〜５項のいずれか１項に記載
の電子写真感光体。(6) The electrophotographic photoreceptor according to any one of claims 3 to 5, wherein the curl prevention layer is silicon nitride. （７）該カール防止層がプラズマＣＶＤ法により基板温
度１００〜２５０℃の下で成膜された窒化ケイ素層であ
ることを特徴とする特許請求の範囲第６項記載の電子写
真感光体。(7) The electrophotographic photoreceptor according to claim 6, wherein the curl prevention layer is a silicon nitride layer formed by plasma CVD at a substrate temperature of 100 to 250°C. （８）前記残留電子抑制層がＰ型またはＮ型半導体層で
ある特許請求の範囲第１〜７項のいずれか１項に記載の
電子写真感光体。(8) The electrophotographic photoreceptor according to any one of claims 1 to 7, wherein the residual electron suppression layer is a P-type or N-type semiconductor layer. （９）前記残留電圧抑制層が１００〜２，０００Åの範
囲内の厚さを有することを特徴とする特許請求の範囲第
８項記載の電子写真感光体。(9) The electrophotographic photoreceptor according to claim 8, wherein the residual voltage suppressing layer has a thickness within a range of 100 to 2,000 Å. （１０）前記基板が導電性であり、電極の機能をも果た
すことを特徴とする特許請求の範囲第１〜９項のいずれ
か１項記載の電子写真感光体。(10) The electrophotographic photoreceptor according to any one of claims 1 to 9, wherein the substrate is conductive and also functions as an electrode.
JP18463485A 1985-08-22 1985-08-22 Electrophotographic sensitive body Pending JPS6244751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18463485A JPS6244751A (en) 1985-08-22 1985-08-22 Electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18463485A JPS6244751A (en) 1985-08-22 1985-08-22 Electrophotographic sensitive body

Publications (1)

Publication Number Publication Date
JPS6244751A true JPS6244751A (en) 1987-02-26

Family

ID=16156662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18463485A Pending JPS6244751A (en) 1985-08-22 1985-08-22 Electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS6244751A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7572562B2 (en) * 2006-07-24 2009-08-11 Xerox Corporation Imaging member having antistatic anticurl back coating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7572562B2 (en) * 2006-07-24 2009-08-11 Xerox Corporation Imaging member having antistatic anticurl back coating

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