JPS6242238U - - Google Patents
Info
- Publication number
- JPS6242238U JPS6242238U JP13374685U JP13374685U JPS6242238U JP S6242238 U JPS6242238 U JP S6242238U JP 13374685 U JP13374685 U JP 13374685U JP 13374685 U JP13374685 U JP 13374685U JP S6242238 U JPS6242238 U JP S6242238U
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- annealing
- heating
- inert gas
- gas flows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000137 annealing Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 238000005192 partition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Description
第1図は、この考案の一実施例によるランプア
ニール装置における前室付きアニール室の上面図
、第2図は、従来のランプアニール装置における
アニール室の上面図、第3図は、第2図の―
線に沿う断面図である。
10,12……石英管、10A……アニール室
、12A……前室、14……仕切板、16……ふ
た、18……ウエハ保持棒。
FIG. 1 is a top view of an annealing chamber with a front chamber in a lamp annealing apparatus according to an embodiment of the invention, FIG. 2 is a top view of an annealing chamber in a conventional lamp annealing apparatus, and FIG. of-
It is a sectional view along a line. 10, 12...quartz tube, 10A...annealing chamber, 12A...front chamber, 14...partition plate, 16...lid, 18...wafer holding rod.
Claims (1)
るアニール室と、 (b) このアニール室を加熱するための赤外線ラ
ンプと、 (c) 前記アニール室の他端に該室内と連通する
ように設けられ、不活性ガスが流通する前室とを
そなえ、 前記前室を介して前記アニール室に被加熱物を
出し入れするようにしたことを特徴とするランプ
アニール装置。[Claims for Utility Model Registration] (a) an annealing chamber in which an inert gas flows from one end to the other; (b) an infrared lamp for heating the annealing chamber; (c) an infrared lamp for heating the annealing chamber; A lamp characterized in that a front chamber is provided at the other end so as to communicate with the chamber and through which an inert gas flows, and the object to be heated is brought into and out of the annealing chamber through the front chamber. Annealing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13374685U JPS6242238U (en) | 1985-08-31 | 1985-08-31 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13374685U JPS6242238U (en) | 1985-08-31 | 1985-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6242238U true JPS6242238U (en) | 1987-03-13 |
Family
ID=31034340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13374685U Pending JPS6242238U (en) | 1985-08-31 | 1985-08-31 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6242238U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0454399U (en) * | 1990-09-14 | 1992-05-11 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636130A (en) * | 1979-08-31 | 1981-04-09 | Nec Corp | Manufacturing device of semiconductor |
JPS57143803A (en) * | 1981-03-03 | 1982-09-06 | Sony Corp | Method of forming resisotr |
-
1985
- 1985-08-31 JP JP13374685U patent/JPS6242238U/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5636130A (en) * | 1979-08-31 | 1981-04-09 | Nec Corp | Manufacturing device of semiconductor |
JPS57143803A (en) * | 1981-03-03 | 1982-09-06 | Sony Corp | Method of forming resisotr |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0454399U (en) * | 1990-09-14 | 1992-05-11 |