JPS6238414B2 - - Google Patents

Info

Publication number: JPS6238414B2
Authority: JP; Japan
Prior art keywords: wire; copper alloy; alloy wire; copper; elements
Prior art date: 1984-08-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP59168684A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6148543A (ja

Inventor

Kazuo Sawada

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-08-10

Filing date

1984-08-10

Publication date

1987-08-18

1984-08-10 Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd

1984-08-10 Priority to JP59168684A priority Critical patent/JPS6148543A/ja

1986-03-10 Publication of JPS6148543A publication Critical patent/JPS6148543A/ja

1987-08-18 Publication of JPS6238414B2 publication Critical patent/JPS6238414B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims abstract description 28
229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 21
239000010949 copper Substances 0.000 claims abstract description 21
229910052737 gold Inorganic materials 0.000 claims abstract description 10
229910052733 gallium Inorganic materials 0.000 claims abstract description 7
229910052738 indium Inorganic materials 0.000 claims abstract description 7
229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
229910052759 nickel Inorganic materials 0.000 claims abstract description 5
239000000463 material Substances 0.000 claims description 9
229910052744 lithium Inorganic materials 0.000 claims description 3
229910052710 silicon Inorganic materials 0.000 abstract description 10
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
239000010703 silicon Substances 0.000 abstract description 9
229910045601 alloy Inorganic materials 0.000 abstract description 2
239000000956 alloy Substances 0.000 abstract description 2
238000010438 heat treatment Methods 0.000 abstract description 2
239000011573 trace mineral Substances 0.000 abstract description 2
235000013619 trace mineral Nutrition 0.000 abstract description 2
229910052732 germanium Inorganic materials 0.000 abstract 2
239000002994 raw material Substances 0.000 abstract 2
229910000510 noble metal Inorganic materials 0.000 abstract 1
238000003466 welding Methods 0.000 abstract 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
229910052802 copper Inorganic materials 0.000 description 16
229910052782 aluminium Inorganic materials 0.000 description 13
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
239000010931 gold Substances 0.000 description 8
238000000034 method Methods 0.000 description 8
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
229910052751 metal Inorganic materials 0.000 description 6
239000002184 metal Substances 0.000 description 6
229910000838 Al alloy Inorganic materials 0.000 description 5
239000010970 precious metal Substances 0.000 description 4
230000000052 comparative effect Effects 0.000 description 3
238000002788 crimping Methods 0.000 description 3
238000002474 experimental method Methods 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000011156 evaluation Methods 0.000 description 2
239000007789 gas Substances 0.000 description 2
238000007747 plating Methods 0.000 description 2
229910000906 Bronze Inorganic materials 0.000 description 1
229910001111 Fine metal Inorganic materials 0.000 description 1
241000587161 Gomphocarpus Species 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000010974 bronze Substances 0.000 description 1
KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000010891 electric arc Methods 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
238000005491 wire drawing Methods 0.000 description 1
238000004857 zone melting Methods 0.000 description 1

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- H01L2924/01049—Indium [In]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Wire Bonding (AREA)
Conductive Materials (AREA)

JP59168684A 1984-08-10 1984-08-10 半導体素子結線用銅合金線 Granted JPS6148543A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP59168684A JPS6148543A (ja)	1984-08-10	1984-08-10	半導体素子結線用銅合金線

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59168684A JPS6148543A (ja)	1984-08-10	1984-08-10	半導体素子結線用銅合金線

Publications (2)

Publication Number	Publication Date
JPS6148543A JPS6148543A (ja)	1986-03-10
JPS6238414B2 true JPS6238414B2 (zh)	1987-08-18

Family

ID=15872552

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59168684A Granted JPS6148543A (ja)	1984-08-10	1984-08-10	半導体素子結線用銅合金線

Country Status (1)

Country	Link
JP (1)	JPS6148543A (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6199645A (ja) *	1984-10-20	1986-05-17	Tanaka Denshi Kogyo Kk	半導体素子のボンデイング用銅線
JPS61113740A (ja) *	1984-11-09	1986-05-31	Tanaka Denshi Kogyo Kk	半導体素子のボンデイング用銅線
JPS61258463A (ja) *	1985-05-13	1986-11-15	Mitsubishi Metal Corp	半導体装置用Ｃｕ合金製ボンディングワイヤ
JPH0747791B2 (ja) *	1985-10-18	1995-05-24	住友電気工業株式会社	ボンデイングワイヤ
JPH0785483B2 (ja) *	1986-07-15	1995-09-13	株式会社東芝	半導体装置
TWI287282B (en)	2002-03-14	2007-09-21	Fairchild Kr Semiconductor Ltd	Semiconductor package having oxidation-free copper wire
SG190482A1 (en) *	2011-12-01	2013-06-28	Heraeus Materials Tech Gmbh	Doped 4n copper wire for bonding in microelectronics device
SG11201608819VA (en)	2014-04-21	2016-12-29	Nippon Steel & Sumikin Mat Co	Bonding wire for semiconductor device
SG11201604437RA (en)	2015-02-26	2016-09-29	Nippon Micrometal Corp	Bonding wire for semiconductor device
WO2016189752A1 (ja)	2015-05-26	2016-12-01	日鉄住金マイクロメタル株式会社	半導体装置用ボンディングワイヤ
WO2016189758A1 (ja)	2015-05-26	2016-12-01	日鉄住金マイクロメタル株式会社	半導体装置用ボンディングワイヤ
US10137534B2 (en)	2015-06-15	2018-11-27	Nippon Micrometal Corporation	Bonding wire for semiconductor device
KR101670209B1 (ko)	2015-06-15	2016-10-27	닛데쓰스미킹 마이크로 메탈 가부시키가이샤	반도체 장치용 본딩 와이어
JP5893230B1 (ja)	2015-07-23	2016-03-23	日鉄住金マイクロメタル株式会社	半導体装置用ボンディングワイヤ
US9887172B2 (en) *	2015-08-12	2018-02-06	Nippon Micrometal Corporation	Bonding wire for semiconductor device
JP6445186B2 (ja) *	2015-12-15	2018-12-26	日鉄ケミカル＆マテリアル株式会社	半導体装置用ボンディングワイヤ
WO2017221434A1 (ja) *	2016-06-20	2017-12-28	日鉄住金マイクロメタル株式会社	半導体装置用ボンディングワイヤ
SG11202001066VA (en) *	2017-08-09	2020-03-30	Nippon Steel Chemical & Material Co Ltd	Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
KR102187539B1 (ko)	2017-12-28	2020-12-07	닛데쓰마이크로메탈가부시키가이샤	반도체 장치용 본딩 와이어
US20230013769A1 (en)	2019-12-02	2023-01-19	Nippon Micrometal Corporation	Copper bonding wire for semiconductor devices and semiconductor device
WO2021167083A1 (ja)	2020-02-21	2021-08-26	日鉄マイクロメタル株式会社	銅ボンディングワイヤ
KR20240015610A (ko)	2021-06-25	2024-02-05	닛데쓰마이크로메탈가부시키가이샤	반도체 장치용 본딩 와이어
EP4361299A1 (en)	2021-06-25	2024-05-01	Nippon Micrometal Corporation	Bonding wire for semiconductor device
EP4361301A1 (en)	2021-06-25	2024-05-01	Nippon Micrometal Corporation	Bonding wire for semiconductor device
JPWO2022270049A1 (zh)	2021-06-25	2022-12-29
KR102497492B1 (ko)	2021-06-25	2023-02-08	닛데쓰마이크로메탈가부시키가이샤	반도체 장치용 본딩 와이어
KR102671200B1 (ko)	2022-06-24	2024-06-03	닛테츠 케미컬 앤드 머티리얼 가부시키가이샤	반도체 장치용 본딩 와이어

1984
- 1984-08-10 JP JP59168684A patent/JPS6148543A/ja active Granted

Also Published As

Publication number	Publication date
JPS6148543A (ja)	1986-03-10

Publication	Publication Date	Title
JPS6238414B2 (zh)	1987-08-18
US4355082A (en)	1982-10-19	Ultra-thin wire for semiconductor connections
JP3382918B2 (ja)	2003-03-04	半導体素子接続用金線
JPH0216580B2 (zh)	1990-04-17
JP2737953B2 (ja)	1998-04-08	金バンプ用金合金細線
JPS60124959A (ja)	1985-07-04	半導体素子結線用線
JP2922388B2 (ja)	1999-07-19	ボンディング用金合金細線
JP2701419B2 (ja)	1998-01-21	半導体素子用金合金細線及びその接合方法
JPH1145899A (ja)	1999-02-16	ボンディングワイヤ
JPH10326803A (ja)	1998-12-08	半導体素子用金銀合金細線
JP3323185B2 (ja)	2002-09-09	半導体素子接続用金線
JPH1167811A (ja)	1999-03-09	半導体素子用金銀合金細線
JP2773202B2 (ja)	1998-07-09	半導体素子ボンディング用Ａｕ合金極細線
JPH1167812A (ja)	1999-03-09	半導体素子用金銀合金細線
JP3426397B2 (ja)	2003-07-14	半導体素子用金合金細線
JPH03291340A (ja)	1991-12-20	半導体装置用銅合金極細線及び半導体装置
JP3744131B2 (ja)	2006-02-08	ボンディングワイヤ
JPS5826662B2 (ja)	1983-06-04	半導体素子のボンデイング用金線
JP3907534B2 (ja)	2007-04-18	ボンディング用金合金線
JP3586909B2 (ja)	2004-11-10	ボンディングワイヤ
JP3086126B2 (ja)	2000-09-11	バンプ用微小金ボール
JP2728216B2 (ja)	1998-03-18	半導体素子のボンディング用金線
JPH06112252A (ja)	1994-04-22	半導体素子用Ｐｔ合金極細線
JP3091076B2 (ja)	2000-09-25	バンプ用微小金ボール
JPS62130249A (ja)	1987-06-12	ボンデイング用銅細線