JPS6237370A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS6237370A JPS6237370A JP17594485A JP17594485A JPS6237370A JP S6237370 A JPS6237370 A JP S6237370A JP 17594485 A JP17594485 A JP 17594485A JP 17594485 A JP17594485 A JP 17594485A JP S6237370 A JPS6237370 A JP S6237370A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- sputtering
- cleaning
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、搬送式のスパッタ装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a transport type sputtering apparatus.
スパッタリングとは、10−5〜1O−6Torrに真
空引きされた真空槽内に1O−2Torr程度の放電雰
囲気ガスを供給し、そしてスパッタターゲットと基板間
に直流あるいは高周波電圧を印加させてプラズマ放電を
発生せしめ、これによジターゲットから放出したターゲ
ット原子や分子が基板表面に吸着して膜成長させるもの
である。また、搬送式スパッタ装置とは移動用トレーに
基板を装着してこれをターゲットと対向しながら移動し
てスパッタ成膜全得る。Sputtering is a process in which a discharge atmosphere gas of about 1O-2 Torr is supplied into a vacuum chamber evacuated to 10-5 to 1O-6 Torr, and a direct current or high-frequency voltage is applied between the sputter target and the substrate to generate plasma discharge. The target atoms and molecules released from the ditarget are adsorbed onto the substrate surface and grow a film. In addition, in a transport type sputtering apparatus, a substrate is mounted on a moving tray, and the substrate is moved while facing a target, thereby obtaining a complete sputter film.
第6図は従来の搬送式スパッタ装置を示す系統図である
。図において、(1)は真空槽、(2)は真空槽(1)
に連結して設けられたメインパルプ、(21)Hメイン
パルプ(2)と直列に接続された可変パルプ、(3)は
真空槽(1)と連結して設けられた族1!雰囲気ガスの
供給パルプで、これは図示しない流量制御装置でコント
ロールされる。(4)は真空槽(1)内に1!気的に絶
縁して設置されたスパッタターゲット、(5)は図示し
ない搬送機構によって真空槽(1)内を移動する搬送ト
レー、(6)はスパッタターゲラ) (4) (!:搬
送トレー(5)間にスパッタ放電に必要な電圧全印加す
る電源装置である。FIG. 6 is a system diagram showing a conventional conveyance type sputtering apparatus. In the figure, (1) is a vacuum chamber, and (2) is a vacuum chamber (1).
(21) a variable pulp connected in series with the H main pulp (2); (3) a group 1! connected to the vacuum chamber (1); Atmospheric gas is supplied to the pulp, and this is controlled by a flow rate controller (not shown). (4) is 1 in the vacuum chamber (1)! (5) is a transport tray that moves within the vacuum chamber (1) by a transport mechanism (not shown); (6) is a sputter target (4) (!: transport tray ( 5) A power supply device that applies all the voltage necessary for sputter discharge between the two.
次にこれらの動作について説明する。まず、真空槽(1
)内は10−5〜10−’ Torrまで高真空排気さ
れた後、可変パルプ(21)のオリフィスが閉じられ、
そして供給パルプ(3)よシアルボン等の雰囲気ガスが
供給されて1O−2Torr程変の真空度に調整される
◇次いで、スパッタターゲラ) (4)の電! (6)
が付勢され、ターゲットのスパッタ放電が開始される。Next, these operations will be explained. First, the vacuum chamber (1
) is evacuated to a high vacuum of 10-5 to 10-' Torr, the orifice of the variable pulp (21) is closed,
Then, an atmospheric gas such as sialbone is supplied to the supply pulp (3), and the degree of vacuum is adjusted to a degree of 10-2 Torr. ◇Then, the sputter targeter) (4) Electric! (6)
is energized and sputter discharge of the target is started.
このとき、雰囲気ガスは供給パルプ(3)から真空槽(
1)に供給され、そしてメインパルプ(2)の方向(第
6図において右から左の矢印m方向)に流れている。一
方、搬送トレー(5)は、上記雰囲気ガスの流れとは逆
の方向(第6図において左から右の矢印n方向)に移動
されている。これは基板表面に形成された膜表面が非常
に活性であり、そのためこの膜表面がスパッタ放電によ
って発生した不純ガスと接触(汚染)するのを避けるた
めである。次ぎに、搬送トレー(5)がターゲット(4
)のスパッタリングスペースを通過した時点で、ターゲ
ット(4)の電源(6)は消勢されてスパッタは完了す
る。At this time, the atmospheric gas is transferred from the supplied pulp (3) to the vacuum chamber (
1), and flows in the direction of the main pulp (2) (in the direction of arrow m from right to left in FIG. 6). On the other hand, the transport tray (5) is being moved in the direction opposite to the flow of the atmospheric gas (in the direction of arrow n from left to right in FIG. 6). This is because the surface of the film formed on the substrate surface is very active, and this is to avoid contact (contamination) of this film surface with impurity gas generated by sputtering discharge. Next, the transport tray (5) is placed on the target (4).
), the power source (6) of the target (4) is turned off and sputtering is completed.
従来の搬送式スパッタ装置は以上のように構成されてい
るので、ターゲット(4)に起因する汚染を避けること
は可能であるが、前工程処理やスパッタ前の放電雰囲気
等による基板の汚染については、スパッタ前に基板表面
の清浄化処理が必要である0清浄化処理した基板につい
ても、保存雰囲気や時間に制約を受けるため、スパッタ
成膜前の処理については、製造上の問題があった。Since the conventional conveyance type sputtering equipment is configured as described above, it is possible to avoid contamination caused by the target (4), but it is possible to avoid contamination of the substrate due to pre-process treatment or discharge atmosphere before sputtering. However, cleaning of the substrate surface is required before sputtering.Even for substrates that have undergone cleaning treatment, there are manufacturing problems with regard to processing before sputtering film formation, since there are restrictions on the storage atmosphere and time.
この発明は、上記のような問題点を解消するためになさ
れたもので、スパッタ成膜の前に、基板を清浄化処理す
ることができる搬送式スパッタ装置を得ることを目的と
する。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a transport type sputtering apparatus that can perform a cleaning process on a substrate before sputtering film formation.
この発明に係る搬送式スパッタ装置は、スパッタ成膜用
ターゲットの他に、基板清浄用ターゲットを設けるとと
もに、雰囲気ガスの供給部および真空排気部を複数系よ
り構成し、雰囲気ガスの流れる方向全搬送トレーの搬送
方向に応じて切り換見られるようにしたものである。The conveyance type sputtering apparatus according to the present invention is provided with a substrate cleaning target in addition to a target for sputter film formation, and is configured with a plurality of atmospheric gas supply parts and vacuum exhaust parts, and conveys the atmospheric gas in all directions in which it flows. The view can be switched depending on the conveyance direction of the tray.
この発明における雰囲気ガスの流れは、雰吐気ガスの供
給パルプおよび真空引きパルプの開閉により流れる方向
が制御され、基板清浄時およびスパッタ成膜時でそれぞ
れ搬送トレーの移動方向と雰囲気ガスの流れる方向とが
常に対向するようにしている。The direction of the flow of the atmospheric gas in this invention is controlled by opening and closing the supply pulp and vacuum pulp for the atmospheric gas, and the direction of the flow of the atmospheric gas is controlled by the direction of movement of the transport tray and the direction of the flow of the atmospheric gas during substrate cleaning and sputtering film formation, respectively. are always facing each other.
以下、この発明の一実施例を第1図の系統図について説
明する。第1図において、(1)は真空槽、(21)
、 (22)は真空槽(1)の両側下部に連結し7て設
置られたメインパルプ、(2Cはメインパルプ(21)
。An embodiment of the present invention will be described below with reference to the system diagram shown in FIG. In Figure 1, (1) is a vacuum chamber, (21)
, (22) is the main pulp connected and installed at the bottom of both sides of the vacuum chamber (1), (2C is the main pulp (21)
.
(22)のそれぞれに連結した可変パルプ、(31)。a variable pulp (31) connected to each of (22);
(62)は真空M (1)の両側上部に連結して設けら
れた放電雰囲気ガスの供給パルプで、図示しない流量制
御装置でコントロールされる。(4)は真空4Vy(1
)内に電気的に絶縁して設置されたスパッタターゲラ)
N(5)は図示しない搬送機構によって真空槽(1)内
を移動する搬送トレー、(6)はスパッタ用電源、(7
)はスパッタターゲット(4)と同様真空槽(1)内に
電気的に絶縁して設置された清浄用ターゲット、(81
) 、 (82)はスパッタ電源(6)のそれぞれの出
力端子に接続され、そしてスパッタターゲット(4)お
よび清浄用ターゲット(7)との接、断を制御する切換
え装置である。第2図は第1図に示した装置の操作手順
を示す流れ図である〇
次に第1図および第2図に基づいて本発明装置の動作を
説明する。まず、メインパルプ(21)または(22)
および可変パルプ(イ)を全開状態にして真空槽(1)
内を10−’〜1O−6Torr tで真空排気した後
(ステップ21)、可変パルプ00のオリフィスを閉じ
た後、パルプ(61)または(32)を開いて清浄スパ
ッタ放電のためのガス導入を行う。いま、搬送トレー(
5)の移動方向が第1図において実線方向n(左→右方
向)の巻合(ただし搬送トレー(5)は清浄用ターゲッ
ト(力の左方に位置している)には、メインパルプ(2
1) t−開、(22)は閉、供給パルプ(62)を開
、(31)は閉とし、雰囲気ガスの流れ′fc第1図に
おいて右→左方向に設定する(この状態をステップ22
のようにガス尊大Iと称する)。次に雰囲気ガスの流a
制御および可変パルプ(2Cのオリフィス調整により、
真空槽(1)内が1O−2Torr程度の設定圧力にな
るように調整する。次に清浄スパッタ放電(これは搬送
トレー(5)に装着された基板表面にプラズマ放電によ
って発生したイオンを衝突させて、基板表面の汚染等を
スパッタエツチングさせること)が発生するような極性
に切換え装置(81) 、 (82)が接続(ステップ
25)されると(第1図では実線で示される(lit)
、スパッタ電R(6)が付勢(ステップ24)されて清
浄スパッタターゲット(7)と搬送トレー(5)間で清
浄スパッタ放電(ステップ25)が開始される。次いで
、搬送トレー(5)を実線方向n(左→右方向)へ移動
させて基板の清浄スパッタを行う。(62) is a discharge atmosphere gas supply pulp connected to both upper sides of the vacuum M (1), and is controlled by a flow rate control device (not shown). (4) is a vacuum of 4Vy (1
sputter targeter installed electrically insulated in )
N (5) is a transport tray that moves within the vacuum chamber (1) by a transport mechanism (not shown), (6) is a sputtering power source, and (7
) is a cleaning target (81) installed electrically insulated in the vacuum chamber (1) like the sputter target (4)
) and (82) are switching devices connected to respective output terminals of the sputtering power supply (6) and controlling connection/disconnection with the sputtering target (4) and the cleaning target (7). FIG. 2 is a flowchart showing the operating procedure of the apparatus shown in FIG. 1. Next, the operation of the apparatus of the present invention will be explained based on FIGS. 1 and 2. First, the main pulp (21) or (22)
and the vacuum chamber (1) with the variable pulp (a) fully open.
After evacuating the interior at 10-' to 1O-6 Torr (step 21), close the orifice of variable pulp 00, and then open pulp (61) or (32) to introduce gas for clean sputter discharge. conduct. Now, the transport tray (
5) is moved in the solid line direction n (left to right direction) in FIG. 2
1) t-open, (22) is closed, supply pulp (62) is open, (31) is closed, and atmospheric gas flow 'fc is set from right to left in Fig. 1 (this state is set in step 22).
(referred to as Gas Dominant I). Next, the flow of atmospheric gas a
Controlled and variable pulp (by orifice adjustment of 2C,
The pressure inside the vacuum chamber (1) is adjusted to a set pressure of about 10-2 Torr. Next, change the polarity to generate a clean sputter discharge (this is a process in which ions generated by plasma discharge collide with the surface of the substrate mounted on the transfer tray (5) to sputter-etch away contamination, etc. on the substrate surface). When the devices (81) and (82) are connected (step 25) (indicated by solid lines in FIG. 1 (lit)
, the sputter electric current R (6) is energized (step 24), and clean sputter discharge (step 25) is started between the clean sputter target (7) and the transport tray (5). Next, the transport tray (5) is moved in the solid line direction n (left to right direction) to perform cleaning sputtering on the substrate.
そして搬送トレー(5)が清浄用ターゲット(力のスパ
ッタリングスペースを通過して清浄スパッタが終了する
と、スパッタ電源(6)は消勢(ステップ26)される
。さらに搬送トレー(5)は、スパッタ成膜にそなえて
、スパッタターゲット(4)の右方(第1図において破
線で示す搬送トレー(5)の位置)まで移動された後停
止する(ステップ27)。次いでメインパルプ(21)
を閉、(22)を開、そして供給パルプ(62)を閉、
(31)を開とし、雰囲気ガスの流れを第1図において
左→右方向に設定する(この状態をステップ28に示す
ようにガス導入■と称す)。次いで、スパッタ成膜が発
生するような極性(ステップ29)に切換え装置(81
) 、 (82)が接続されると(第1図においては破
線で示す位置)、スパッタ電源(6)が再び付勢(ステ
ップ30)され、スパッタターゲット(4)と搬送トレ
ー(5)間でスパッタ放電が発生する。次いで、搬送ト
レー(5)を右→左方向(破l/sm方向)へ移動(ス
テップ31)させて、スパッタ成膜を行う。次ぎに搬送
トレー(5)がスパッタリングスペースを通過してスパ
ッタ成膜が終了すれば、スパッタ電源(6)を消勢(ス
テップ32)L、そして搬送トレー(5)の移動全停止
(ステップ66)する0最後に供給パルプ(31)。Then, when the transport tray (5) passes through the sputtering space of the cleaning target (power) and the clean sputtering is completed, the sputter power supply (6) is deenergized (step 26). The main pulp (21) is moved to the right of the sputtering target (4) (the position of the conveyance tray (5) indicated by the broken line in FIG. 1) in preparation for the membrane and then stopped (step 27).
close, (22) open and feed pulp (62) closed;
(31) is opened and the flow of atmospheric gas is set from left to right in FIG. 1 (this state is referred to as gas introduction (2) as shown in step 28). Next, the polarity switching device (81
) and (82) are connected (the position indicated by the broken line in FIG. 1), the sputter power supply (6) is energized again (step 30), and the sputter target (4) and the transfer tray (5) are connected. Sputter discharge occurs. Next, the transport tray (5) is moved from right to left (in the direction of fracture l/sm) (step 31), and sputtering film formation is performed. Next, when the transport tray (5) passes through the sputtering space and sputter film formation is completed, the sputter power supply (6) is turned off (step 32), and the movement of the transport tray (5) is completely stopped (step 66). 0 Finally feed pulp (31).
(62)を閉、メインバルブ(21) 、 (22)を
開、可変パルプ翰のオリアイスを開として真空排気(ス
テップ64)を行う。(62) is closed, the main valves (21) and (22) are opened, and the orifice of the variable pulp feeder is opened to perform vacuum evacuation (step 64).
なお、上記実施例では、ガス供給パルプおよび真空排気
用メインパルプがいずれも2系統の場合について説明し
たが、これは複数の系統でも同様の効果を得ることがで
きる。In the above embodiment, the case where there are two systems for both the gas supply pulp and the vacuum evacuation main pulp has been described, but the same effect can be obtained even when a plurality of systems are used.
以上のように、この発明によれば、搬送式スパッタ装置
のガス供給部および真空排気部をそれぞれ複数糸よシ溝
成し、そして雰囲気ガスの流れる方向を制御するととも
に、スパッタ電源の極性切換え装置により、ターゲット
を基板清浄用とスパッタ成膜用に切換え使用することが
できるので、基板の汚染に対応して清浄スパッタ放電お
よびスパッタ成膜が引紐いて実施することができ、良質
なスパッタ膜が得られる効果がある。As described above, according to the present invention, the gas supply section and the evacuation section of the conveyance type sputtering apparatus each have a plurality of thread grooves, and the direction in which the atmospheric gas flows is controlled, and the polarity switching device of the sputtering power supply As a result, the target can be switched between cleaning the substrate and sputtering film formation, allowing cleaning sputter discharge and sputtering film formation to be carried out in tandem in response to substrate contamination, resulting in high-quality sputtered films. It has the effect of
第1図はこの発明の一実施例によるスパッタ装置の系統
図、第2図は第1図装置のガス導入およびスパッタ動作
過程を示す流れ図、第6図は従来のスパッタ装置の系統
図である。
図中、(1)は真空槽、(2) 、 (21) 、 (
22)はメインパルプ、(3ン、 (31) 、 (3
2)はガス供給パルプ、(4)はスパッタターゲット、
(5)は搬送トレー、(6)はスパッタ1!源、(7)
は清浄用ターゲット、(8)は切換え装置、(至)は可
変パルプである。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a system diagram of a sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a flowchart showing the gas introduction and sputtering operation process of the apparatus shown in FIG. 1, and FIG. 6 is a system diagram of a conventional sputtering apparatus. In the figure, (1) is a vacuum chamber, (2), (21), (
22) is the main pulp, (3n, (31), (3
2) is gas supply pulp, (4) is sputter target,
(5) is the transport tray, and (6) is the sputter 1! Source, (7)
is a cleaning target, (8) is a switching device, and (to) is a variable pulp. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
入部と、前記真空容器を真空排気する複数の真空排気部
と、清浄用ターゲット電極およびスパッタターゲット電
極と、前記両ターゲット電極と対向しながら移動する基
板装着電極と、前記両ターゲット電極と基板装着電極に
電圧を印加する電源装置と、該電源装置の出力極性の切
換え装置と、を有するスパッタ装置において、 前記ガス導入部と真空排気部との配置により真空容器内
におけるガス流れの方向が前記基板装着電極の移動方向
と対向するように制御し、前記電源装置の出力極性を前
記ターゲット毎に切換えて基板の清浄およびスパッタ成
膜を連続して行うようにしたことを特徴とするスパッタ
装置。[Scope of Claims] A vacuum container, a plurality of gas introduction sections that introduce gas into the vacuum container, a plurality of vacuum exhaust sections that evacuate the vacuum container, a cleaning target electrode and a sputter target electrode, A sputtering apparatus comprising: a substrate-mounted electrode that moves while facing both target electrodes; a power supply device that applies a voltage to both the target electrodes and the substrate-mounted electrode; and an output polarity switching device of the power supply device, wherein the gas The direction of gas flow in the vacuum container is controlled to be opposite to the direction of movement of the electrode attached to the substrate by the arrangement of the introduction part and the vacuum exhaust part, and the output polarity of the power supply device is switched for each target to clean the substrate. and a sputtering apparatus characterized in that sputtering film formation is performed continuously.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17594485A JPS6237370A (en) | 1985-08-12 | 1985-08-12 | Sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17594485A JPS6237370A (en) | 1985-08-12 | 1985-08-12 | Sputtering device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6237370A true JPS6237370A (en) | 1987-02-18 |
Family
ID=16004981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17594485A Pending JPS6237370A (en) | 1985-08-12 | 1985-08-12 | Sputtering device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6237370A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63240017A (en) * | 1987-03-27 | 1988-10-05 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH01111871A (en) * | 1987-10-23 | 1989-04-28 | Nec Corp | Plasma vapor phase growing device |
JPH023917A (en) * | 1988-01-20 | 1990-01-09 | Philips Gloeilampenfab:Nv | Manufacture of semiconductor device |
US4980208A (en) * | 1989-06-14 | 1990-12-25 | Menicon Company, Ltd. | Method for treating the surface of an oxygen permeable hard contact lens |
-
1985
- 1985-08-12 JP JP17594485A patent/JPS6237370A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63240017A (en) * | 1987-03-27 | 1988-10-05 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH01111871A (en) * | 1987-10-23 | 1989-04-28 | Nec Corp | Plasma vapor phase growing device |
JPH023917A (en) * | 1988-01-20 | 1990-01-09 | Philips Gloeilampenfab:Nv | Manufacture of semiconductor device |
US4980208A (en) * | 1989-06-14 | 1990-12-25 | Menicon Company, Ltd. | Method for treating the surface of an oxygen permeable hard contact lens |
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