JPS6233418A - Band melting type single crystal semiconductor layer forming device - Google Patents
Band melting type single crystal semiconductor layer forming deviceInfo
- Publication number
- JPS6233418A JPS6233418A JP17647585A JP17647585A JPS6233418A JP S6233418 A JPS6233418 A JP S6233418A JP 17647585 A JP17647585 A JP 17647585A JP 17647585 A JP17647585 A JP 17647585A JP S6233418 A JPS6233418 A JP S6233418A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- single crystal
- heating source
- radiant heating
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は帯域溶融型単結晶半導体層形成装置に関し、
特に絶縁層上の多結晶または非晶質半導体層を再結晶化
させることにより、比較的大きな面積でかつ高品質の単
結晶層を製造することができる帯域溶融型単結晶半導体
層形成装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a zone melting type single crystal semiconductor layer forming apparatus,
In particular, it relates to a zone melting type single crystal semiconductor layer forming apparatus that can manufacture a high quality single crystal layer with a relatively large area by recrystallizing a polycrystalline or amorphous semiconductor layer on an insulating layer. It is.
［従来の技術］
従来用いられている帯域溶融型単結晶半導体層形成装置
を第３図に示して説明すると、図において、１は後述す
る試料ウェハ３を下部面からカｏ熱。[Prior Art] A conventionally used zone melting type single crystal semiconductor layer forming apparatus will be described with reference to FIG. 3. In the figure, reference numeral 1 refers to a sample wafer 3, which will be described later, which is heated from the bottom surface.
昇温するように構成されたカーボンなどからなる板状の
下部ヒータ、２は同じく試料ウェハ３を上部から加熱、
昇温するとともにその一端がら他端へ向かって微速で移
動するように構成された直線状の上部ヒータである。矢
印５は上部ヒータ２の移動方向を示している。また、試
料ウェハ３は溶融、再結晶化されるべき多結晶シリコン
層を有する。この試料ウェハ３は、第４図に示すように
、単結晶のシリコン基板６の一生面上に０．５μｍ程度
の厚い二酸化シリコン層７が形成され、その面上に溶融
、再結晶化されるべき多結晶シリコン＠８が０．５μｌ
ｌ１８！度の厚さを有して形成されている。また、多結
晶シリコン層８の面上には、この多結晶シリコン層が溶
融時に単結晶のシリコン基板６から剥離することを防ぐ
ための保護層として２μｍの二酸化シリコン層つと３Ｑ
ｎｍ程度の窒化シリコン層１０とが積層して形成されて
いる。A plate-shaped lower heater made of carbon or the like configured to raise the temperature, 2 also heats the sample wafer 3 from above;
This is a linear upper heater configured to raise the temperature and move at a very slow speed from one end to the other end. An arrow 5 indicates the direction of movement of the upper heater 2. The sample wafer 3 also has a polycrystalline silicon layer to be melted and recrystallized. As shown in FIG. 4, this sample wafer 3 has a silicon dioxide layer 7 about 0.5 μm thick formed on the whole surface of a single-crystal silicon substrate 6, and is melted and recrystallized on that surface. 0.5 μl of polycrystalline silicon @8
l18! It is formed to have a thickness of 100 degrees. Further, on the surface of the polycrystalline silicon layer 8, a 2 μm thick silicon dioxide layer is formed as a protective layer to prevent this polycrystalline silicon layer from peeling off from the single crystal silicon substrate 6 during melting.
A silicon nitride layer 10 having a thickness of approximately nm is laminated.
而して、試料ウェハ３中の多結晶シリコン＠８を再結晶
化して単結晶にするには、下部ヒータ１で試料ウェハ３
を下部面から１２００℃に加熱。Therefore, in order to recrystallize the polycrystalline silicon@8 in the sample wafer 3 into a single crystal, the sample wafer 3 is heated using the lower heater 1.
is heated to 1200℃ from the bottom side.
昇温する。そして、上部ヒータ２を２０００℃に昇温し
た下で、この上部ヒータ２を試料ウェハ３の上面より１
〜２ｍ１Ｎ程１［しその一端から矢印５で示す一定方向
に、たとえば２ｍ１ｌｌ／秒のｉ１度で移動せしめて試
料ウェハ３の全域を走査する。このとき、試料ウェハ３
中には上部ヒータ２の形状に応じた溶融層４ができ、こ
れが上部ヒータ２の移動に伴って移動することにより、
試料ウェハ３中の多結晶シリコン層８の大結晶粒化が図
られることになる。なお、かかる成長はアルゴンなどの
不活性ガス雰囲気中で行なわれる。Increase temperature. Then, while raising the temperature of the upper heater 2 to 2000° C., the upper heater 2 is heated to 100° C. from the upper surface of the sample wafer 3.
The entire area of the sample wafer 3 is scanned by moving the sample wafer 3 by approximately 2 mlN from one end in a fixed direction shown by the arrow 5, for example, at a rate of 2 ml/sec. At this time, sample wafer 3
A molten layer 4 corresponding to the shape of the upper heater 2 is formed inside, and as this moves as the upper heater 2 moves,
Large crystal grains of the polycrystalline silicon layer 8 in the sample wafer 3 will be achieved. Note that this growth is performed in an inert gas atmosphere such as argon.
第５図は、従来技術のもう１つの例である帯域溶融型単
結晶半導体層形成装置を示す図である。FIG. 5 is a diagram showing a zone melting type single crystal semiconductor layer forming apparatus, which is another example of the prior art.
図において、この装置は、大略第３図の下部ヒータ１．
上部ヒータ２をそれぞれ複数本のＭＷ加熱用管状ランプ
１１ａ〜１１ｅ、溶融体形成用管状ランプ１２で置き換
えた構成となっている。ざらに詳細に説明すると、ウェ
ハ保持板１４上に、第４図と同様な構成の試料ウェハ３
ｏが置かれる。In the figure, this device generally includes the lower heater 1. of FIG.
The upper heater 2 is replaced with a plurality of MW heating tubular lamps 11a to 11e and a melt forming tubular lamp 12, respectively. To explain in detail, a sample wafer 3 having a structure similar to that shown in FIG. 4 is placed on the wafer holding plate 14.
o is placed.
試料ウェハ３０の上部にはこの上面に平行に集光ミラー
１２０を有する溶融体形成用管状ランプ１２が設けられ
ている。集光ミラー１２０は溶融体形成用管状ランプ１
２からの光を試料ウェハ３０に集光照射してこれを加熱
し、その多結晶シリコン層を帯状に溶融させる。また、
ウェハ保持板１４の下部には、このウェハ保持板の下面
に平行に複数本の基板加熱用環状ランプ１１ａ〜１１ｅ
が設けられており、各基板加熱用管状ランプｌｌａ〜１
１ｅはそれぞれ反射ミラー１１０ａ〜１１０ｅを有して
いる。各基板加熱用管状ランプ１１ａ〜１１ｅの管軸は
、溶融体形成用管状ランプ１２の管軸と平行にかつ互い
に等しい間隔を隔てて配置されている。各反射ミラー１
１０ａ〜１１０ｅはそれぞれ各基板加熱用管状ランプ１
１ａ〜１１ｅからの光の散ｉ会を防ぐａ基板加熱用管状
ランプ１１ａ〜１１ｅからの光はウニＡ保持板１４の全
下面を照射してこれを加熱し、それによって試料ウェハ
３ｏの単結晶のシリコン基板を加熱する。A tubular lamp 12 for forming a melt is provided above the sample wafer 30 and has a condensing mirror 120 parallel to the upper surface. The condensing mirror 120 is a tubular lamp 1 for forming a melt.
The sample wafer 30 is heated by condensed light from the sample wafer 2, and the polycrystalline silicon layer is melted in a band shape. Also,
At the bottom of the wafer holding plate 14, a plurality of annular lamps 11a to 11e for substrate heating are provided in parallel to the lower surface of the wafer holding plate.
are provided, and each substrate heating tubular lamp lla~1 is provided.
1e has reflective mirrors 110a to 110e, respectively. The tube axes of the substrate heating tubular lamps 11a to 11e are arranged parallel to the tube axis of the melt forming tubular lamp 12 and at equal intervals. Each reflective mirror 1
10a to 110e are tubular lamps 1 for heating each substrate, respectively.
The light from the substrate heating tubular lamps 11a to 11e that prevents the scattering of light from 1a to 11e irradiates the entire lower surface of the A holding plate 14 and heats it, thereby heating the single crystal of the sample wafer 3o. heating the silicon substrate.
この装置では、試料ウェハ３ｏの単結晶のシリコン基板
を均一に加熱するために、１１０熱用管状ランプの本数
を比較的多くしている。試料ウニｌ＼３０を基板加熱用
管状ランプ１１ａ〜１１ｅとともに矢印１５方向に溶融
体形成用管状ランプ１２に対して移動し、この溶融体形
成用管状ランプ１２からの光で試料ウェハ３０を照射し
ながらその全域を走査する。このとき、帯状に溶融され
た領域はその上下の二酸化シリコン１間で移動され、こ
のようにして試料ウェハ３０の多結晶シリコン層は再結
晶化されて単結晶になる。In this apparatus, the number of heat tubular lamps 110 is relatively large in order to uniformly heat the single crystal silicon substrate of the sample wafer 3o. The sample urchin l\30 is moved along with the substrate heating tubular lamps 11a to 11e in the direction of the arrow 15 relative to the melt forming tubular lamp 12, and the sample wafer 30 is irradiated with light from the melt forming tubular lamp 12. while scanning the entire area. At this time, the belt-shaped melted region is moved between the silicon dioxide 1 above and below it, and in this way the polycrystalline silicon layer of the sample wafer 30 is recrystallized to become a single crystal.
また、上述と同様に、試料ウェハのシリコン基板を均一
に加熱するために、基板加熱用管状ランプの本数を１本
だけに限った装置も提供されていた。Further, as described above, in order to uniformly heat the silicon substrate of the sample wafer, an apparatus has also been provided in which the number of tubular lamps for heating the substrate is limited to one.
［発明が解決しようとする問題点］
従来の帯域溶融型単結晶半導体層形成装置は以上のよう
に構成されており、試料ウェハの単結晶のシリコン基板
の加熱に関しては、これを十分均一にできるような配慮
がなされていた。しかしながら、従来の装置で実際に帯
域溶融を行なうと、試料ウェハはその上下両面から加熱
されるため、試料ウェハ中央部から熱が逃げにくく中央
部と周辺部の溶融条件が異なってくる現象が起こり、如
何に設計しても直径４インチ以上の大面積の試料ウェハ
を一度の走査による帯域溶融では再結晶化できないとい
う問題点があった。[Problems to be Solved by the Invention] The conventional zone melting type single crystal semiconductor layer forming apparatus is configured as described above, and can heat the single crystal silicon substrate of the sample wafer sufficiently uniformly. Such consideration was given. However, when band melting is actually performed using conventional equipment, the sample wafer is heated from both its top and bottom surfaces, which makes it difficult for heat to escape from the center of the sample wafer, resulting in a phenomenon in which the melting conditions at the center and the periphery differ. However, there was a problem in that no matter how designed, a large area sample wafer with a diameter of 4 inches or more could not be recrystallized by band melting by one scan.
また、試料ウェハの中央の一部のみが溶融できるよう加
熱濃度を配慮して実験をした場合も、溶融から固体に至
る際の固化潜熱を充分逃がしきれず結晶成長にかかわる
温度勾配が緩くなり、結晶成長面が帯域溶融の進行方向
に垂直な面とならない現象が起こる。この現象について
、第６図（Ａ）、（Ｂ）を参照してさらに詳細に説明す
る。第６図（Ａ）は、帯域溶融中の試料ウェハの断面図
であり、第６図（Ｂ）は第６図（Ａ＞の多結晶シリコン
層を含む平面図である。図において、８０は多結晶シリ
コン層８のランプ光１３による帯状溶融領域であり、８
１は単結晶化されたシリコン層である。結晶成長にかか
わる濃度勾配が緩くなると、結晶成長面１６は〈１１１
〉面となり鋸歯のようになってしまう。このため、１７
のような場所に不純物の１析やストレスの増加が生じて
小傾角ではあるが結晶粒界１８が発生し、多結晶シリコ
ン層が全面単結晶とはなり得ないという問題点があった
。In addition, even if the heating concentration was adjusted so that only a part of the center of the sample wafer could be melted, the latent heat of solidification from melting to solid state could not be sufficiently dissipated, and the temperature gradient related to crystal growth would become gentle. A phenomenon occurs in which the crystal growth plane is not perpendicular to the direction of progress of zone melting. This phenomenon will be explained in more detail with reference to FIGS. 6(A) and 6(B). FIG. 6(A) is a cross-sectional view of the sample wafer during zone melting, and FIG. 6(B) is a plan view including the polycrystalline silicon layer of FIG. 6(A). This is a belt-shaped melted region of the polycrystalline silicon layer 8 caused by the lamp light 13;
1 is a single crystal silicon layer. When the concentration gradient related to crystal growth becomes gentle, the crystal growth surface 16 becomes <111
> surface, resulting in a sawtooth-like appearance. For this reason, 17
There is a problem in that the crystal grain boundaries 18 are generated although the tilt angle is small due to impurity precipitation and stress increase in locations such as , and the polycrystalline silicon layer cannot become a single crystal over the entire surface.
この発明は上記のような問題点を解消するためになされ
たもので、大面積でかつ高品質の単結晶半導体層を形成
することができる帯域溶融型単結晶半導体層形成装置を
得ることを目的とする。This invention was made to solve the above-mentioned problems, and its purpose is to provide a zone melting type single crystal semiconductor layer forming apparatus that can form a large area and high quality single crystal semiconductor layer. shall be.
［問題点を解決するための手段〕
この発明に係る帯域溶融型単結晶半導体層形成装置は、
絶縁層と該絶縁層上に形成される多結晶または非晶質半
導体層を含む試料を台に置き、試料の上面と隔てて平行
に、この試料を照射し加熱して上記半導体層を帯状に溶
融させる第１長手状輻射加熱源を設け、台の下面と隔て
て平行にかつこの台に対して固定的に、試料を照射し加
熱する第２輔射加熱源を設け、移動手段により第２輻射
加熱源を第１長手状輻射加熱源の長手方向にほぼ直角な
方向に第１長手状輻射加熱源に対して相対的に移動して
、帯状溶融領域を絶縁層上で移動させ、この帯状溶！！
領域の移ｖＩ時に、帯状溶融領域に続く前方領緘の濃度
を高くし、帯状溶融領域に続く後方領域の温度を低くす
るよう、ｌ］［＋熱制御手段により第２輻射加熱源の加
熱を制御するようにしたものである。[Means for solving the problems] The zone melting type single crystal semiconductor layer forming apparatus according to the present invention includes:
A sample including an insulating layer and a polycrystalline or amorphous semiconductor layer formed on the insulating layer is placed on a stand, and the sample is irradiated and heated parallel to and apart from the top surface of the sample to form the semiconductor layer into a band shape. A first elongated radiant heating source for melting the sample is provided, a second radiant heating source for irradiating and heating the sample is provided parallel to and separated from the lower surface of the table and fixedly relative to this table, and a second elongated radiant heating source is provided for irradiating and heating the sample by moving means The radiant heating source is moved relative to the first longitudinal radiant heating source in a direction substantially perpendicular to the longitudinal direction of the first longitudinal radiant heating source to move a band-shaped melting region over the insulating layer; Melt! !
When the region is transferred, the heating of the second radiant heating source is controlled by the heat control means so as to increase the concentration of the front region following the belt-shaped melting region and lower the temperature of the rear region following the belt-shaped melting region. It was designed to be controlled.
［作用］
この発明においては、試料の帯状溶融領域の移動的に、
帯状領域に続く前方領域の温度を高（し、帯状溶融領域
に続く後方領域の温度を低くするよう制御されるので、
帯状溶！！領域の後縁における固液界面での温度勾配が
大きくなる。[Function] In the present invention, in the movement of the band-shaped melted region of the sample,
The temperature is controlled to be high in the front region following the belt-like melting region and to lower the temperature in the rear region following the belt-like melting region.
Band melt! ! The temperature gradient at the solid-liquid interface at the trailing edge of the region increases.
［実施例］ 以下、この発明の実施例を図について説明する。[Example] Embodiments of the present invention will be described below with reference to the drawings.
第１図は、この発明の実施例である帯域溶融型単結晶半
導体層形成装置を示す図である。この装置の構成につい
て説明すると、図において、ウェハ保持板１４はカーボ
ン製であり、その厚みを６１１Ｉｍ〜１０１１１．その
形状を正方形または長方形にしである。ウェハ保持板１
４上に試料ウェハ３ｏが置かれる。この試料ウェハは、
第４図の試料ウェハと同様に構成されている。すなわち
、単結晶のシリコン基板上に、二酸化シリコン層、多結
晶シリコン層、二酸化シリコン層、窒化シリコン層がこ
の順序で積層して形成されており、単結晶化すべき多結
晶シリコン層は絶縁層内に挾まれている。FIG. 1 is a diagram showing a zone melting type single crystal semiconductor layer forming apparatus according to an embodiment of the present invention. To explain the configuration of this device, in the figure, the wafer holding plate 14 is made of carbon, and its thickness is 611 Im to 10111 Im. Make the shape square or rectangular. Wafer holding plate 1
A sample wafer 3o is placed on top of the sample wafer 4. This sample wafer is
It has the same structure as the sample wafer shown in FIG. That is, a silicon dioxide layer, a polycrystalline silicon layer, a silicon dioxide layer, and a silicon nitride layer are laminated in this order on a single-crystal silicon substrate, and the polycrystalline silicon layer to be made into a single crystal is formed within an insulating layer. is sandwiched between.
試料ウェハ３０の上部にはこの上面に平行に集光ミラー
１２０を有する溶融体形成用管状ランプ１２が設けられ
ている。集光ミラー１２０は溶融体形成用管状ランプ１
２がらの光を試料ウェハ３゜に集光照射してこれを加熱
し、多結晶シリコン層をその上下の絶縁層間で帯状に溶
融させる。また、ウェハ保持板１４の下部には、このウ
ェハ保持板の下面に平行にかつ溶融体形成用管状ランプ
１２の管軸と平行に１０本の！Ｓ板加熱用筐状ランプ１
９ａ−１９ｊが互いに狂い間隔を隔てて密集して設置プ
られている。昼仮加熱用管状ランプ１９ａ〜１９ｊから
の光はウェハ保持板１４の全下面を照射してこれを加熱
し、それによって試料ウェハ３０の単結晶のシリコン基
板を加熱する。基板加熱用管状ランプ１９ａ〜１９Ｊと
ウェハ保持板１４とは互いに固定されており、移ｇｔＪ
装置（図示せず）は、試料ウェハ３０が置かれたウェハ
保持板１４と基板加熱用管状ランプ１９ａ〜１９ｊとを
溶融体形成用管状ランプ１２の管軸にほぼ直角な矢印１
５方向に溶融体形成用管状ランプ１２に対して相対的に
移動させる。これに−より、試料ウェハ３０の全域は溶
融体形成用管状ランプ１２がらの光で照射されながら走
査され、多結晶シリコン層の帯状ｒ８融領域はその上下
の絶縁層間で走査方向に移動される。ウェハ保持板１４
の側部に位置センサ２１が設けられており、この位置セ
ンサは移動する帯状溶融領域の試料ウェハ３０に対する
位置を検出する。位置センサ２１は副部装置２０に接続
され、この制御装置２０は各基板加熱用管状ランプ１９
ａ〜１９ｊに接続されている。制ｍ装置２ｏは電源を含
み、各基板加熱用管状ランプ１９ａ〜１９Ｊに電力を供
給するとともに、各基板加熱用管状ランプに供給する電
力を位置センサ２１出力に基づいて制御し、これによっ
て試料ウェハ３ｏの温度分布を制御する。A tubular lamp 12 for forming a melt is provided above the sample wafer 30 and has a condensing mirror 120 parallel to the upper surface. The condensing mirror 120 is a tubular lamp 1 for forming a melt.
Two beams of light are condensed onto the sample wafer at 3° to heat it, and the polycrystalline silicon layer is melted in a strip between the upper and lower insulating layers. Further, at the bottom of the wafer holding plate 14, there are ten lamps parallel to the lower surface of the wafer holding plate and parallel to the tube axis of the tubular lamp 12 for forming the melt. Housing lamp 1 for heating S plate
9a to 19j are installed closely spaced apart from each other. The light from the daytime temporary heating tubular lamps 19a to 19j illuminates and heats the entire lower surface of the wafer holding plate 14, thereby heating the single crystal silicon substrate of the sample wafer 30. The substrate heating tubular lamps 19a to 19J and the wafer holding plate 14 are fixed to each other, and the transfer gtJ
The apparatus (not shown) moves the wafer holding plate 14 on which the sample wafer 30 is placed and the substrate heating tubular lamps 19a to 19j in the direction of an arrow 1 substantially perpendicular to the tube axis of the melt forming tubular lamp 12.
It is moved in five directions relative to the tubular lamp 12 for forming the melt. As a result, the entire area of the sample wafer 30 is scanned while being irradiated with light from the melt forming tubular lamp 12, and the belt-shaped r8 melting region of the polycrystalline silicon layer is moved in the scanning direction between the upper and lower insulating layers. . Wafer holding plate 14
A position sensor 21 is provided on the side of the sample wafer 30, which detects the position of the moving belt-shaped melting region with respect to the sample wafer 30. The position sensor 21 is connected to a subsidiary device 20, which control device 20 controls each substrate heating tubular lamp 19.
connected to a to 19j. The control device 2o includes a power supply, supplies power to each of the substrate heating tubular lamps 19a to 19J, and controls the power supplied to each substrate heating tubular lamp based on the output of the position sensor 21, thereby controlling the sample wafer. Control the temperature distribution of 3o.
次に、この装置で帯域溶融を行なう場合について説明す
る。基板加熱用管状ランプ１９ａ〜１９ｊからの光によ
りウェハ保持板１４の全下面を照射して加熱し、溶融体
形成用管状ランプ１２からの光により試料ウェハ３０の
上面を照射して加熱し、この状態で移動装置により試料
ウェハ３０が置かれたウェハ保持板１４を基板加熱用管
状ランプ１９ａ〜１９ｊとともに、溶融体形成用管状ラ
ンプ１２の管軸にほぼ直角な矢印１５方向に溶融体形成
用管状ランプ１２に対して相対的に移動させる。このと
き、溶融体形成用管状ランプ１２からの光により試料ウ
ェハ３ｏは照射されながら走査され、試料ウェハ３ｏの
絶縁層間に約２ＩｌｌＩＩ幅の多結晶シリコン層の帯状
溶融領域が生じ、この溶融領域はその後縁で結晶成長さ
せながら絶縁層間を試料ウェハ３０の一方端から他方端
に移動される。このとき、位置センサ２１により帯状溶
融領域の試料ウェハ３０に対する位置が検出され、この
位置センサ２１出力に基づいて制御Ｉ装置２ｏにより、
帯状溶融領域の移動に応じて、帯状溶融領域に続く後方
ｗｔａ下の各基板加熱用管状ランプへの供給電力が帯状
溶融領域に続く前方領域下の各基板加熱用管状ランプへ
の供給電力より低下するように制御され、これによって
、試料ウェハ３゜の走査方向の温度分布は、帯状溶融領
域に続く前方領域の温度が高くなり、帯状溶融領域に続
く後方領域の温度が低くなるように制御される。すなわ
ち、第２図（Ａ＞に示すように、帯状溶融領域に続く接
方領域下の各基板加熱用管状ランプ１９ａ〜１９ｃへの
供給電力が帯状溶融領域に続（前方領域下の各基板加熱
用管状ランプ１９６〜１９Ｊへの供給電力より低下する
ように制御され、このとき、試料ウェハ３０の走査方向
の温度分布は、第２図（Ｂ＞に示すように、基板加熱用
管状ランプ１９６〜１９ｊ上の帯状溶融領域に続く前方
領域の１ｒ！１２０が高くなり、Ｍ仮加熱用管状ランプ
１９ａ〜１９ｃ上の帯状溶融領域に続く後方ｆｉＩ緘の
温度２１が低くなるように制御される。このため、帯状
溝！！！領域の後縁での再結晶にかかわる温度勾配が急
峻になって固化潜熱の吐き出しなど放熱を妨げる要因が
取り除かれ、結晶成長面が走査方向に垂直な面となり、
不純物の偏析などの発生が抑えられて大面積で高品質の
単結晶シリコン層を二酸化シリコン層上に容易に形ｙｉ
することができる。Next, the case where zone melting is performed using this apparatus will be explained. The entire lower surface of the wafer holding plate 14 is irradiated and heated with light from the substrate heating tubular lamps 19a to 19j, and the upper surface of the sample wafer 30 is irradiated and heated with light from the melt forming tubular lamp 12. In this state, the wafer holding plate 14 on which the sample wafer 30 is placed is moved along with the substrate heating tubular lamps 19a to 19j by the moving device in the direction of arrow 15, which is approximately perpendicular to the tube axis of the melt forming tubular lamp 12. It is moved relative to the lamp 12. At this time, the sample wafer 3o is scanned while being irradiated with light from the melt-forming tubular lamp 12, and a band-shaped melted region of the polycrystalline silicon layer with a width of about 2IllII is created between the insulating layers of the sample wafer 3o, and this melted region is The sample wafer 30 is moved from one end of the sample wafer 30 to the other end between the insulating layers while causing crystal growth at its trailing edge. At this time, the position of the belt-shaped melted region with respect to the sample wafer 30 is detected by the position sensor 21, and based on the output of this position sensor 21, the control I device 2o
According to the movement of the belt-shaped melting region, the power supplied to each substrate heating tubular lamp under the rear wta following the belt-shaped melting region is lower than the power supplied to each substrate heating tubular lamp under the front region following the belt-shaped melting region. As a result, the temperature distribution in the scanning direction of the sample wafer 3° is controlled such that the temperature in the front region following the belt-shaped melting region is high, and the temperature in the rear region following the belt-shaped melting region is low. Ru. That is, as shown in FIG. At this time, the temperature distribution of the sample wafer 30 in the scanning direction is controlled to be lower than the power supplied to the substrate heating tubular lamps 196 to 19J, as shown in FIG. 1r!120 of the front region following the belt-shaped melting region on M temporary heating tubular lamps 19a to 19c is controlled so that the temperature 21 of the rear fiI strip following the belt-shaped melting region on M temporary heating tubular lamps 19a to 19c is lowered. Therefore, the temperature gradient associated with recrystallization at the trailing edge of the band-shaped groove region becomes steeper, and factors that hinder heat radiation, such as discharging latent heat of solidification, are removed, and the crystal growth plane becomes a plane perpendicular to the scanning direction.
Easily forms a large-area, high-quality single-crystal silicon layer on a silicon dioxide layer with less segregation of impurities.
can do.
なお、上記実施例では、基板の加熱に複数の管状ランプ
を使用する場合について示したが、複数の線状ヒータを
使用して基板を加熱してもよく、また、ウェハ保持板を
陽極とし複数の線状アークトーチを陰極として基板を加
熱するようにしてもよく、これらの場合にも上記実施例
と同様の効果を秦する。In the above embodiment, a case is shown in which a plurality of tubular lamps are used to heat the substrate, but the substrate may be heated using a plurality of linear heaters. The substrate may be heated using a linear arc torch as a cathode, and in these cases, the same effect as in the above embodiment can be obtained.
また、上記実施例では、多結晶シリコン層を単結晶化す
る場合について示したが、単結晶化する層としては他の
多結晶半導体層や非晶質半導体層であってもよく、この
場合にも上記実施例と同櫟の効果を奏する。Further, in the above embodiment, a case where a polycrystalline silicon layer is made into a single crystal is shown, but the layer to be made into a single crystal may be another polycrystalline semiconductor layer or an amorphous semiconductor layer, and in this case, This embodiment also has the same effect as the above embodiment.
また、上記実施例では、二酸化シリコン層上の多結晶シ
リコン層を１１結晶化する場合について示したが、他の
絶縁層上の多結晶シリコン層を単結晶化してもよく、こ
の場合にも上記実施例と同様の効果を奏する。Further, in the above embodiment, the case where the polycrystalline silicon layer on the silicon dioxide layer is crystallized is shown, but the polycrystalline silicon layer on the other insulating layer may be made into a single crystal. The same effects as in the embodiment are achieved.
また、上記実施例では、基板加熱用管状ランプに供給す
る電力を制御して試料ウェハの温度分布を制御する場合
について示したが、基板加熱用管状ランプからの光を遮
断する断熱材を、溶融帯形成用管状ランプに対して固定
的に設け、かつこの断熱材をウェハ保持板と基板加熱用
管状ランプ間に試料の帯状溶融領域に続く後方領域に対
応して位置するように挿入して、試料ウェハの温度を制
御するようにしてもよい。Furthermore, in the above embodiment, the temperature distribution of the sample wafer is controlled by controlling the power supplied to the tubular lamp for heating the substrate. The heat insulating material is fixedly provided to the band-forming tubular lamp, and is inserted between the wafer holding plate and the substrate heating tubular lamp so as to correspond to the rear area following the band-shaped melting area of the sample. The temperature of the sample wafer may also be controlled.
［発明の効果］
以上のようにこの発明によれば、絶縁層と該絶縁層上に
形成される多結晶または非晶質半導体層を含む試料を台
に置き、試料の上面と隔てて平行に、この試料を照射し
加熱して上記半導体層を帯状に溶融させる第１長手状輻
射加熱源を設け、台の下面と隔てて平行にかつこの台に
対して固定的に、試料を照射し加熱する第２Ｉ！躬加熱
源を設け、移動手段により第２輻射加熱源を第１長手状
輻射加熱源の長手方向にほぼ直角な方向に第１長手状輻
射加熱源に対して相対的に移動して、帯状溶融領域を絶
縁層上で移動させ、この帯状溶融領域の移動時に、帯状
溶融領域に続く前方領域の湿度を高くし、帯状溶Ｆｔ１
１領域に涜く漬方ｆ！４域の温度を低くするよう、加熱
制御手段により第２輻射加熱源の加熱を制御するように
したので、大面積でかつ高品質の単結晶半導体層を絶縁
１上に形成することができる帯域溶融型単結晶半導体層
形成装置を得ることができる。[Effects of the Invention] As described above, according to the present invention, a sample including an insulating layer and a polycrystalline or amorphous semiconductor layer formed on the insulating layer is placed on a stand, and the sample is placed parallel to the upper surface of the sample. A first longitudinal radiant heating source is provided to irradiate and heat the sample to melt the semiconductor layer in a band shape, and irradiates and heats the sample parallel to and apart from the lower surface of the table and fixedly to the table. 2nd I to do! A belt-like heating source is provided, and the second radiant heating source is moved by the moving means relative to the first longitudinal radiant heating source in a direction substantially perpendicular to the longitudinal direction of the first longitudinal radiant heating source, thereby melting the belt-shaped radiant heating source. The region is moved on the insulating layer, and when the belt-shaped melting region is moved, the humidity in the front region following the belt-shaped melting region is increased, and the belt-shaped melting Ft1 is increased.
How to pickle in one area f! Since the heating of the second radiant heating source is controlled by the heating control means so as to lower the temperature in zone 4, a zone where a large-area and high-quality single crystal semiconductor layer can be formed on insulator 1. A molten single crystal semiconductor layer forming apparatus can be obtained.
第１図は、この発明の実施例である帯域溶融型単結晶半
導体層形成装置を示す図である。
第２図（Ａ＞、（Ｂ）は、この発明の実施例である帯域
溶融型単結晶゛に導体層形成装置における試料ウェハの
走査方向の温度分布の制御を説明するための図である。
第３図は、従来のカーボンヒータ、を用いた帯域溶融型
単結晶半導体層形成装置を示す図である。
第４図は試料ウェハの断面図である。
第５図は、従来の管状ランプを用いた帯域溶融型単結晶
半導体層形成装置を示す図である。
第６図（Ａ）は帯域溶融中の試料つ１ハの断面図であり
、第６図（Ｂ）は第６図＜Ａ）の多結晶シリコン層を含
む平面図である。
図において、３，３０は試料ウェハ、６は単結晶のシリ
コン基板、７．９は二酸化シリコン層、８は多結晶シリ
コン層、１０は窒化シリコン層、１２は溶融体形成用管
状ランプ、１２０は反射ミラー、１４はウェハ保持板、
１９ａ〜１９ｊは基板加熱用管状ランプ、２０は制御装
置、２１は位置センサである。
なお、各図中同一符号は同一または相当部分を示す。
代 理 人 大 岩 増 雄第１図
第２図
第３図
第４図FIG. 1 is a diagram showing a zone melting type single crystal semiconductor layer forming apparatus according to an embodiment of the present invention. FIGS. 2A and 2B are diagrams for explaining control of the temperature distribution in the scanning direction of a sample wafer in an apparatus for forming a conductor layer on a band-melting single crystal according to an embodiment of the present invention. Fig. 3 is a diagram showing a zone melting type single crystal semiconductor layer forming apparatus using a conventional carbon heater. Fig. 4 is a cross-sectional view of a sample wafer. Fig. 5 is a diagram showing a conventional tubular lamp. 6 is a diagram showing the zone melting type single crystal semiconductor layer forming apparatus used. FIG. 6(A) is a cross-sectional view of the sample during zone melting, and FIG. ) is a plan view including a polycrystalline silicon layer. In the figure, 3 and 30 are sample wafers, 6 is a single crystal silicon substrate, 7.9 is a silicon dioxide layer, 8 is a polycrystalline silicon layer, 10 is a silicon nitride layer, 12 is a tubular lamp for forming a melt, and 120 is a a reflecting mirror; 14 is a wafer holding plate;
19a to 19j are tubular lamps for heating the substrate, 20 is a control device, and 21 is a position sensor. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa Figure 1 Figure 2 Figure 3 Figure 4
Claims (7)
晶質半導体層を含む試料において、前記半導体層を帯状
に溶融させ、この帯状溶融領域を前記絶縁層上で移動さ
せて前記半導体層を単結晶化する装置であって、 前記試料を置く台と、 前記台に対して該台に置かれた前記試料の側に、該試料
の上面と隔てて平行に設けられ、該試料を照射し加熱し
て前記半導体層を帯状に溶融させる第１長手状輻射加熱
源と、 前記台に対して前記第１長手状輻射加熱源と反対側に、
該台の下面と隔てて平行にかつ該台に対して固定的に設
けられ、前記試料を照射し加熱する第２輻射加熱源と、 前記第２輻射加熱源を、前記第１長手状輻射加熱源の長
手方向にほぼ直角な方向に該第１長手状輻射加熱源に対
して相対的に移動させる移動手段と、 前記試料の前記帯状溶融領域の移動時に、該帯状溶融領
域に続く前方領域の温度を高くし、該帯状溶融領域に続
く後方領域の温度を低くするよう、前記第２輻射加熱源
の加熱を制御する加熱制御手段とを備えた帯域溶融型単
結晶半導体層形成装置。(1) In a sample including an insulating layer and a single crystal or amorphous semiconductor layer formed on the insulating layer, the semiconductor layer is melted in a band shape, and this band-shaped melted region is moved on the insulating layer to An apparatus for single-crystallizing a semiconductor layer, comprising: a table on which the sample is placed; and a table provided on the side of the sample placed on the table with respect to the table, parallel to the top surface of the sample and separated from the top surface of the sample; a first longitudinal radiant heating source that irradiates and heats the semiconductor layer to melt the semiconductor layer in a band shape; on the opposite side of the table from the first longitudinal radiant heating source;
a second radiant heating source that is fixedly provided parallel to and apart from the lower surface of the table and irradiates and heats the sample; a moving means for moving relative to the first longitudinal radiant heating source in a direction substantially perpendicular to the longitudinal direction of the source; A zone melting type single crystal semiconductor layer forming apparatus, comprising: heating control means for controlling heating of the second radiant heating source so as to increase the temperature and lower the temperature of a rear region following the belt-shaped melting region.
あり、 前記絶縁層は二酸化シリコン層である特許請求の範囲第
１項記載の帯域溶融型単結晶半導体層形成装置。(2) The zone melting single crystal semiconductor layer forming apparatus according to claim 1, wherein the polycrystalline or amorphous semiconductor layer is a silicon layer, and the insulating layer is a silicon dioxide layer.
許請求の範囲第１項記載の帯域溶融型単結晶半導体層形
成装置。(3) The zone melting type single crystal semiconductor layer forming apparatus according to claim 1, wherein the first longitudinal radiant heating source is a tubular lamp.
され、該各管状ランプは互いに間隔を隔てかつそれらの
管軸は前記第１長手状輻射加熱源の長手方向にほぼ平行
である特許請求の範囲第１項記載の帯域溶融型単結晶半
導体層形成装置。(4) The second radiant heating source is comprised of a plurality of tubular lamps, each tubular lamp being spaced apart from each other and having their tube axes substantially parallel to the longitudinal direction of the first elongated radiant heating source. A zone melting type single crystal semiconductor layer forming apparatus according to claim 1.
され、該各線状ヒータは互いに間隔を隔てかつそれらの
長手軸は前記第１長手状輻射加熱源の長手方向にほぼ平
行である特許請求の範囲第１項記載の帯域溶融型単結晶
半導体層形成装置。(5) The second radiant heating source includes a plurality of linear heaters, each of which is spaced apart from each other, and whose longitudinal axis is substantially parallel to the longitudinal direction of the first elongated radiant heating source. A zone melting type single crystal semiconductor layer forming apparatus according to claim 1.
ら構成され、該各線状アークトーチは互いに間隔を隔て
かつそれらの長手軸は前記第１長手状輻射加熱源の長手
方向にほぼ平行である特許請求の範囲第１項記載の帯域
溶融型単結晶半導体層形成装置。(6) The second radiant heating source is comprised of a plurality of linear arc torches, each of which is spaced apart from each other, and whose longitudinal axes are substantially parallel to the longitudinal direction of the first longitudinal radiant heating source. A zone melting single crystal semiconductor layer forming apparatus according to claim 1.
源間に、前記試料の前記帯状溶融領域に続く前記後方領
域に対応して位置するよう挿入され、かつ前記第１長手
状輻射加熱源に対して固定的に設けられる断熱材である
特許請求の範囲第１項記載の帯域溶融型単結晶半導体層
形成装置。(7) The heating control means is inserted between the table and the second radiant heating source so as to be positioned corresponding to the rear region following the band-shaped melting region of the sample, and 2. The zone melting type single crystal semiconductor layer forming apparatus according to claim 1, which is a heat insulating material fixedly provided with respect to the heat source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17647585A JPS6233418A (en) | 1985-08-07 | 1985-08-07 | Band melting type single crystal semiconductor layer forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17647585A JPS6233418A (en) | 1985-08-07 | 1985-08-07 | Band melting type single crystal semiconductor layer forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6233418A true JPS6233418A (en) | 1987-02-13 |
Family
ID=16014319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17647585A Pending JPS6233418A (en) | 1985-08-07 | 1985-08-07 | Band melting type single crystal semiconductor layer forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6233418A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274084A (en) * | 2000-03-24 | 2001-10-05 | Hiroshi Komiyama | Method of manufacturing crystalline silicon thin film and solar battery using the same |
| JP2010532570A (en) * | 2007-06-26 | 2010-10-07 | マサチューセッツ インスティテュート オブ テクノロジー | Recrystallization of semiconductor wafers in thin film capsules and related processes |
-
1985
- 1985-08-07 JP JP17647585A patent/JPS6233418A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274084A (en) * | 2000-03-24 | 2001-10-05 | Hiroshi Komiyama | Method of manufacturing crystalline silicon thin film and solar battery using the same |
| JP2010532570A (en) * | 2007-06-26 | 2010-10-07 | マサチューセッツ インスティテュート オブ テクノロジー | Recrystallization of semiconductor wafers in thin film capsules and related processes |
| US8633483B2 (en) | 2007-06-26 | 2014-01-21 | Massachusetts Institute Of Technology | Recrystallization of semiconductor wafers in a thin film capsule and related processes |
| US9932689B2 (en) | 2007-06-26 | 2018-04-03 | Massachusetts Institute Of Technology | Semiconductor wafers recrystallized in a partially surrounding thin film capsule |
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