JPS62297493A - Method for plating semiconductor water - Google Patents
Method for plating semiconductor waterInfo
- Publication number
- JPS62297493A JPS62297493A JP13829386A JP13829386A JPS62297493A JP S62297493 A JPS62297493 A JP S62297493A JP 13829386 A JP13829386 A JP 13829386A JP 13829386 A JP13829386 A JP 13829386A JP S62297493 A JPS62297493 A JP S62297493A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- wafer
- plating solution
- soln
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 151
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 claims description 50
- 238000003756 stirring Methods 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 9
- 238000003825 pressing Methods 0.000 abstract description 17
- 238000002347 injection Methods 0.000 abstract description 13
- 239000007924 injection Substances 0.000 abstract description 13
- 238000007789 sealing Methods 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 59
- 239000007788 liquid Substances 0.000 description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000013019 agitation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000002730 additional effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〈産業上の利用分野〉
この発明は、半導体ウェハーのメッキ方法に関するもの
である。[Detailed Description of the Invention] 3. Detailed Description of the Invention (Field of Industrial Application) This invention relates to a method of plating semiconductor wafers.
〈従来の技術〉
従来の半導体ウェハーのメッキ方法としては、半導体ウ
ェハーをランクより吊り下げメッキ液槽中に浸漬してメ
ッキを施す方法、或いは特開昭５３−１９１４７号公報
に示される如くメ・７キ液噴射による方法がある。<Prior Art> Conventional methods for plating semiconductor wafers include plating the semiconductor wafer by suspending it from a rank and immersing it in a plating solution bath, or a method as shown in Japanese Patent Application Laid-Open No. 19147-1981. There is a method using liquid injection.
前者の浸漬メッキによる方法では極めて畏い処理時間〔
約１〜２時間〕を要するため現在でｉよ主に後者のメッ
キ液噴射による方法が採用されている。このメッキ液噴
射の方法では、第３図の如く噴射メッキ液流１ 〔以下
、メッキ液流〕が、ウェハー２の表面３〔被メッキ面側
〕の略中心部５に至り、更に略中心部５より外周方向〔
矢示Ａ方向〕にメッキを施しつつ表面３に沿い拡散して
流れ、外周部６で流下、排除されるものである。The former method, which uses immersion plating, takes an extremely long processing time.
Since it takes about 1 to 2 hours, the latter method, which involves spraying a plating solution, is currently mainly used. In this method of spraying a plating solution, as shown in FIG. From 5 to the outer circumferential direction [
While applying plating in the direction of arrow A], it diffuses and flows along the surface 3, flows down at the outer peripheral part 6, and is removed.
〈発明が解決しようとする問題点〉
しかしながら、このような従来の半導体ウェハーのメッ
キ方法（メッキ液噴射方法）は、浸漬メッキ法より所要
時間を轟かに短縮できる利点があるものの、ウェハー２
の表面３に至ったメッキ液流１は、前記した如く略中心
部５から外周方向へのみ流れるため、メッキ液７の流れ
には一定の方向性が存在することとなり、この方向性に
よる影響が、略中心部５と外周部６に形成される金属メ
ッキ層に於いて顕著にみられるものであった。<Problems to be Solved by the Invention> However, although such a conventional semiconductor wafer plating method (plating liquid injection method) has the advantage of dramatically shortening the required time compared to the immersion plating method, it
Since the plating liquid flow 1 that has reached the surface 3 flows only from the substantially central portion 5 toward the outer circumference as described above, there is a certain directionality in the flow of the plating liquid 7, and the influence of this directionality is , which was noticeable in the metal plating layer formed on the substantially central portion 5 and the outer peripheral portion 6.
ウェハー２の略中心部５〔第３図中矢示■部〕では、メ
ッキ液流１が直接光たるためメッキ液７の撹拌部８が形
成され、撹拌によりメッキ液７の特定方向への流れが殆
どなく方向性による影響がない。このため、金属イオン
が豊富に供給され電流密度も安定し、形状、厚さ、サイ
ズ等の点で良好な金属メッキＮ９〔以下、メッキ層〕が
形成される〔第５図〕。At approximately the center 5 of the wafer 2 (point indicated by the arrow in FIG. 3), the plating liquid flow 1 shines directly, forming a stirring section 8 for the plating liquid 7, and the stirring causes the plating liquid 7 to flow in a specific direction. There is almost no influence from direction. Therefore, metal ions are abundantly supplied, the current density is stable, and a metal plating N9 (hereinafter referred to as plating layer) with good shape, thickness, size, etc. is formed (FIG. 5).
尚、撹拌部８とは、噴射されるメッキ液７とウェハー２
に当たって戻るメッキ液１０が混ざり合う如く、流れの
方向の異なるメッキ液同士が混合し、それがメッキ液流
１の圧力により′ｍ続的に存在する部分をいうものであ
る。Note that the stirring section 8 refers to the plating solution 7 and the wafer 2 that are sprayed.
This refers to a portion where plating solutions flowing in different directions mix with each other, just as the plating solutions 10 that hit and return mix together, and where they exist continuously due to the pressure of the plating solution flow 1.
一方、略中心部５から外周部６に移るにつれて、メッキ
液７の流れは単にウェハー２の表面３に沿う特定方向へ
の流れのみ〔第３図中矢示■部〕となり撹拌部８が生ぜ
ず、メッキ液７の流れの方向性によるメッキ層形成への
影響〔即ち、メンキ５１１がメッキ液７の流れる方向に
沿って変形して成長すること、第６図参照〕が顕著に現
れ、又金属イオンがともすれば不足がちで、更に、電流
密度の点でも不安定になりがちである。更にメッキ処理
中、ウェハー２のレジスト層１２付近に水素ガス１３が
発生するような場合〔第７図参照〕、撹拌が殆どない状
態では水素ガス１３の除去が困難で、この水素ガス１３
に対応する部分が欠けた状態でメッキＦｉ１４が形成さ
れることもある。On the other hand, as the plating solution 7 moves from the center 5 to the outer periphery 6, the plating solution 7 simply flows in a specific direction along the surface 3 of the wafer 2 (as indicated by the arrow ■ in FIG. 3), and no stirring section 8 is generated. , the influence of the directionality of the flow of the plating solution 7 on the formation of the plating layer (that is, the coating 511 deforms and grows along the flow direction of the plating solution 7, see FIG. 6) is noticeable, and the metal Ions tend to become insufficient, and furthermore, the current density tends to become unstable. Furthermore, if hydrogen gas 13 is generated near the resist layer 12 of the wafer 2 during the plating process (see FIG. 7), it is difficult to remove the hydrogen gas 13 with little stirring;
The plating Fi 14 may be formed with the corresponding portion missing.
これら各種の原因で形状、厚さ、サイズ等の点で良好な
メッキ層９の形成は容易ではなく、製品の歩留りが向上
せず改善が望まれていた。Due to these various reasons, it is not easy to form a plating layer 9 with good shape, thickness, size, etc., and the yield of products has not improved, and improvements have been desired.
そこでこの発明は、メッキ液の流れによる方向性を解消
するとともに電流密度、金属イオン分布等のメッキ条件
を均一化し、良好なメッキ層を形成し製品の歩留りを向
上し得る半導体ウェハーのメッキ方法を提供することを
目的としている。Therefore, the present invention aims to develop a semiconductor wafer plating method that eliminates the directionality caused by the flow of the plating solution, equalizes plating conditions such as current density and metal ion distribution, forms a good plating layer, and improves the yield of products. is intended to provide.
〈問題点を解決するための手段〉
上記の目的を達成するためのこの発明の詳細な説明する
と、レジスト層の形成された半導体ウェハーの被メッキ
面側の表面に、この表面面積に対し小さな区域毎にメッ
キ液の噴射と液戻りを行うことにより、全体にわたって
メッキ液の均一な撹拌状態を得て金属メッキ層を形成す
るものとしている。<Means for Solving the Problems> To explain in detail the present invention for achieving the above object, on the surface of the semiconductor wafer on which the resist layer is formed, on the side to be plated, a small area relative to the surface area is formed. By spraying and returning the plating solution each time, a uniform stirring state of the plating solution is obtained over the entire area, and a metal plating layer is formed.
く 作 用 〉
そして、この発明は前記の手段により、半導体ウェハー
の表面〔被メッキ面側〕に対し、小さな区域毎にメッキ
液の噴射と液戻りを行うため小さな区域毎にメッキ液の
撹拌状態が得られ、しかも表面全体にわたって、いわば
無数の小さな区域毎のメッキ液の撹拌により、表面全体
で均一な撹拌状態が得られることになる。これにより半
導体ウェハーの表面のメッキ液の流れの方向性を解消、
し、電流密度、金属イオン分布等のメッキ条件を均一、
安定化させ、仮令水素ガスが発生したとしても小さな区
域毎のメッキ液の撹拌で積極的に除去してしまうので、
良好な金属メッキ層の形成を容易とし、以て製品の歩留
りを向上し得るものである。By using the above-mentioned means, the present invention sprays and returns the plating solution to the surface of the semiconductor wafer (on the side to be plated) in each small area, so that the agitation state of the plating solution is adjusted in each small area. Moreover, by stirring the plating solution in countless small areas over the entire surface, a uniform stirring state can be obtained over the entire surface. This eliminates the directionality of the plating solution flow on the surface of the semiconductor wafer.
The plating conditions such as current density and metal ion distribution are uniform.
It stabilizes the plating solution, and even if hydrogen gas is generated, it is actively removed by stirring the plating solution in small areas.
This facilitates the formation of a good metal plating layer, thereby improving the yield of products.
〈実 施 例〉 以下、この発明の詳細を図面に基づいて説明する。<Example> The details of this invention will be explained below based on the drawings.
尚、従来と共通する部分は同一符号を用いることとし重
複説明を省略する。Incidentally, the same reference numerals are used for the parts common to the conventional one, and redundant explanation will be omitted.
第１図及び第２図は、この発明の一実施例を示す図であ
る。FIG. 1 and FIG. 2 are diagrams showing an embodiment of the present invention.
、 まず、この半導体ウェハーのメッキ方法にて使用す
るメッキ装置について説明する。First, the plating apparatus used in this semiconductor wafer plating method will be explained.
このメッキ装置２０は、半導体ウェハー２〔以下、ウェ
ハー〕にメッキ処理を施す略円形状の第１メッキ処理槽
２１と、該第１メッキ処理Ｗ、２１を囲繞する略円形状
の第２メッキ処理槽２２と、第１メブキ処理槽２１の上
部に載置されるウェハー２を上方より押圧し固定する押
圧手段２３と、第１メッキ処理槽２１内にメッキ液７を
供給するパイプ２４と、第１、第２両メッキ処理槽２１
．２２を支持するベース体２５とからなる。This plating apparatus 20 includes a substantially circular first plating tank 21 for plating a semiconductor wafer 2 (hereinafter referred to as wafer), and a substantially circular second plating tank 21 surrounding the first plating tank 21. A tank 22, a pressing means 23 for pressing and fixing the wafer 2 placed on the upper part of the first plating tank 21 from above, a pipe 24 for supplying the plating solution 7 into the first plating tank 21, 1. Second plating tank 21
．． 22 and a base body 25 supporting the base body 22.
この第１メッキ処理槽２１は、略円形状の枠体としての
処理槽本体２６により全体が形成され、この処理槽本体
２６の下部にパイプ２４から供給されるメッキ液７を受
は入れる受液部２７と、押圧手段２３と対応しウェハー
２を載置・固定すると共にメッキ処理を施す処理部２８
と、受液部２７と処理部２８を接続しメッキ液７の流路
〔往路〕となるメッキ液供給管２９〔以下、供給管〕と
からなる。The first plating tank 21 is entirely formed by a processing tank main body 26 as a substantially circular frame, and the lower part of the processing tank main body 26 receives the plating solution 7 supplied from the pipe 24. 27, and a processing section 28 which corresponds to the pressing means 23 and which places and fixes the wafer 2 and performs plating processing.
and a plating solution supply pipe 29 (hereinafter referred to as supply pipe) which connects the liquid receiving section 27 and the processing section 28 and serves as a flow path (outward path) for the plating solution 7.
そして処理槽本体２６の側面の、処理部２８と受液部２
７の間に相当する部分〔供給管２９相応位置〕には流下
するメッキ液３０を排出する排出開口３１〔復路〕が形
成されている。Then, the processing section 28 and the liquid receiving section 2 on the side of the processing tank main body 26
A discharge opening 31 (return path) for discharging the plating solution 30 flowing down is formed in a portion corresponding to the gap 7 (a position corresponding to the supply pipe 29).
上記受液部２７は、アノード３２と、上記供給管２９に
接続される微少な供給孔３３が多数形成されている密閉
ｌｌ３４とからなり、更にパイプ２４の開口は下向きに
配されている。The liquid receiving part 27 is composed of an anode 32 and a sealed part 134 in which a large number of minute supply holes 33 are formed, which are connected to the supply pipe 29, and the opening of the pipe 24 is arranged downward.
上記処理部２８は、ウェハー２と当接しメッキ液７の外
部流出防止用のシール部３５を有すると共に前記処理槽
本体２６の上縁部に嵌合して固定される受部材３６と、
前記供給管２９に接続されている微少な供給孔３７及び
メッキ液３０排出用の排出孔３８〔復路〕が多数形成さ
れている下部受部材３９と、この下部受部材３９上で供
給孔３７の位置に前記供給管２９と接続され多数本、立
設されている噴射ノズル４゜とからなる。The processing section 28 has a seal section 35 that contacts the wafer 2 and prevents the plating solution 7 from flowing out, and a receiving member 36 that is fitted and fixed to the upper edge of the processing tank main body 26;
A lower receiving member 39 is formed with a large number of minute supply holes 37 connected to the supply pipe 29 and a large number of discharge holes 38 (return path) for discharging the plating solution 30, and the supply holes 37 are formed on the lower receiving member 39. It consists of a large number of injection nozzles 4° connected to the supply pipe 29 and installed vertically.
この多数本の噴射ノズル４０と同じく多数の排出孔３８
は、ウェハー２の表面面積に対し小さな区域５５毎にメ
ッキ液７の噴射と液戻りを行うことで表面３の全面にメ
ッキ液層４１を形成するとともに該表面３の至るところ
でメッキ液７の撹拌部８を生ぜしめ、言わばミクロ的な
メッキ液７．３ｏの出・入りを可能とするものである。Similar to this large number of injection nozzles 40, a large number of discharge holes 38
In this method, a plating solution layer 41 is formed over the entire surface 3 by spraying and returning the plating solution 7 to each small area 55 relative to the surface area of the wafer 2, and the plating solution 7 is stirred all over the surface 3. 8, which allows the plating solution 7.3o to enter and exit on a so-called microscopic scale.
そして供給管２つは処理部２８と受液部２７の間に配さ
れ、密閉Ｍ３４の供給孔３３と下部受部材３９の供給孔
３７とを接続するものである。The two supply pipes are arranged between the processing section 28 and the liquid receiving section 27, and connect the supply hole 33 of the seal M34 and the supply hole 37 of the lower receiving member 39.
第２メッキ処理槽２２は、第１メッキ処理槽２１を囲繞
しメッキ処理を終えて流下するメッキ液３ｏを受は止め
、ベース体２５に開口形成されている排出孔４２へ導く
ものである。The second plating tank 22 surrounds the first plating tank 21 and receives the plating solution 3o flowing down after the plating process, and guides it to a discharge hole 42 formed in the base body 25.
押圧手段２３は、下面の弾性体４４〔例えば、セルスポ
ンジ〕を介してウェハー２を押圧、固定する押圧本体４
５と、この押圧本体４５を上下方向〔矢示Ｂ方向〕に上
下動自在とすると共に適度の圧力をかける上下動手段４
６とからなる。The pressing means 23 is a pressing body 4 that presses and fixes the wafer 2 via an elastic body 44 (for example, cell sponge) on the lower surface.
5, and a vertical movement means 4 that allows the pressing body 45 to be vertically movable in the vertical direction [direction of arrow B] and applies appropriate pressure.
It consists of 6.
この上下動手段４６は、押圧本体４５に設けられている
押圧本体軸４７〔以下、軸〕と、該軸４７と螺合し該軸
４７の上下動を支持する横枠部材４８と、第２メッキ処
理槽２２の外側に取付けられ横枠部材４８を固定してい
る縦枠部材４９と、からなる。This vertical movement means 46 includes a pressing main body shaft 47 [hereinafter referred to as shaft] provided on the pressing main body 45, a horizontal frame member 48 that is threadedly engaged with the shaft 47 and supports the vertical movement of the shaft 47, and a second A vertical frame member 49 is attached to the outside of the plating tank 22 and fixes a horizontal frame member 48.
軸４７は、ネジ部５０及び手動輪５１を有し、一方横枠
部材４８には押圧本体４５を上下動させるために前記ネ
ジ部５０と螺合するネジ部５２を備えているもので、手
動輪５１の回転により、横枠部材４８に対し、軸４７が
上下方向〔矢示Ｂ方向〕に相対的に移動するものである
。The shaft 47 has a threaded portion 50 and a manual wheel 51, and the horizontal frame member 48 is provided with a threaded portion 52 that is screwed into the threaded portion 50 to move the pressing body 45 up and down. The rotation of the ring 51 causes the shaft 47 to move in the vertical direction [in the direction of arrow B] relative to the horizontal frame member 48.
パイプ２４は、図示せぬリザーバタンク及びポンプと接
続されており、前記受液部２７内にメッキ液７を供給す
るものである。The pipe 24 is connected to a reservoir tank and a pump (not shown), and supplies the plating liquid 7 into the liquid receiving section 27.
ベース体２５は、第１、第２両メッキ処理槽２１．２２
を支持するものであり、この第１、第２両メッキ処理槽
２１．２２間に流下するメッキ液３ｏを排出し回収する
ための排出孔４２を備えているものである。The base body 25 has both first and second plating tanks 21 and 22.
, and is provided with a discharge hole 42 for discharging and collecting the plating solution 3o flowing down between the first and second plating tanks 21 and 22.
コノ発明は上記メッキ装置２ｏを使用してメブキを行う
もので、次にこの発明の一実施例を説明する。The present invention is to perform plating using the above-mentioned plating apparatus 2o. Next, an embodiment of the present invention will be described.
先ず、手動輪５１を回転して押圧本体４５を上方へ移動
させ、シール部３５上にウェハー２を載置、位置決めの
後、手動輪５１を先と逆回転させて押圧本体４５により
ウェハー２を押圧、固定する。First, the manual wheel 51 is rotated to move the pressing body 45 upward, and after placing and positioning the wafer 2 on the seal portion 35, the manual wheel 51 is rotated in the opposite direction, and the pressing body 45 presses the wafer 2. Press and fix.
その状態で、メッキ液７がパイプ２４から受液部２７に
供給され、更うこ密閉Ｍ３４の供給孔３３、供給管２９
、下部受部材３９の供給孔３７を経て噴射ノズル４０に
至る。処理部２８内では、多数本の噴射ノズル１１０よ
り整しい数の噴射メッキ液流５３〔以下、メッキ液流〕
が同時に噴出し、メッキ液流５３をウェハー２の表面３
〔被メッキ面４側〕に浴びせて該表面３にメッキ液層
４１を形成し、該メッキ液層４１は多数のメッキ液流５
３よりメッキ液７が供給されるのでメッキ液Ｎ４１内の
至るところでメッキ液７の撹拌部８が形成され、従来の
メッキ液７の流れの方向性を解消しているものである。In this state, the plating solution 7 is supplied from the pipe 24 to the liquid receiving part 27, and the supply hole 33 of the sealed M34 and the supply pipe 29
, and reaches the injection nozzle 40 through the supply hole 37 of the lower receiving member 39. In the processing section 28, an even number of sprayed plating liquid streams 53 (hereinafter referred to as plating liquid streams) are generated from the plurality of spray nozzles 110.
are ejected at the same time, sending the plating liquid flow 53 onto the surface 3 of the wafer 2.
A plating liquid layer 41 is formed on the surface 3 by pouring it onto the surface 4 to be plated, and the plating liquid layer 41 is formed by a large number of plating liquid streams 5.
Since the plating solution 7 is supplied from the plating solution N41, stirring portions 8 of the plating solution 7 are formed throughout the plating solution N41, thereby eliminating the conventional flow directionality of the plating solution 7.
第２図に示す如く、各噴射ノズル４０より噴射されたメ
ッキ液流５３は、一部がウェハー２の表面３に達し、そ
の近傍に撹拌部８を生じると共に他の一部はウェハー２
の表面３に沿って左右方向〔矢示Ｃ方向〕に分流しよう
とする。As shown in FIG. 2, a part of the plating liquid flow 53 injected from each injection nozzle 40 reaches the surface 3 of the wafer 2, creating an agitating section 8 in the vicinity thereof, and the other part reaches the surface 3 of the wafer 2.
The flow is attempted to be divided in the left-right direction [in the direction of arrow C] along the surface 3 of.
一方、隣合う噴射ノズル４０からも同様にメッキ液流５
３が分流しようとするため、噴射ノズル４０間でもメッ
キ液７同士が衝突して撹拌部８を生じるもので、これに
よりメッキ液層４１にはウェハー２の表面３の全体にわ
たって適度な撹拌作用が生じていることになり、金属イ
オン分布、電流密度等のメッキ条件を均一、安定化する
ことができ、仮令水素ガスが発生したとしても積極的に
除去でき、良好なメッキ層を形成し得るものである。On the other hand, the plating liquid flow 5 also flows from the adjacent injection nozzle 40.
3 tries to separate, the plating liquid 7 collides with each other even between the injection nozzles 40 and creates a stirring area 8. As a result, a moderate stirring effect is exerted on the plating liquid layer 41 over the entire surface 3 of the wafer 2. This means that plating conditions such as metal ion distribution and current density can be made uniform and stable, and even if hydrogen gas is generated, it can be actively removed and a good plating layer can be formed. It is.
このように、多数本の噴射ノズル４０によるメッキ液流
５３の噴出と、多数の排出孔３８による排出を同時に行
うことにより、ウェハー２の表面面積に対する小さな区
域５５毎のメッキ液の噴射と液戻りが達成され、言わば
ミクロ的なメッキ液７．３０の出し入れを可能とするこ
とにより、表面３の全体にわたってメッキ液７の均一な
撹拌状態が得られることになる。In this way, by simultaneously ejecting the plating liquid stream 53 from the multiple injection nozzles 40 and discharging it from the multiple discharge holes 38, the plating liquid can be ejected and returned to each small area 55 on the surface area of the wafer 2. This is achieved, and by making it possible to take in and out the plating solution 7.30 on a so-called microscopic scale, the plating solution 7 can be stirred uniformly over the entire surface 3.
そして、メッキ液７は処理部２８内を流下し、下部受部
材３９の排出孔３８を経て処理槽本体２６の排出開口３
１より第２メッキ処理槽２２に規制されてベース体２５
の排出孔４２より排出される。この排出されたメッキ液
３０は図示せぬリザーバタンクに回収され、更に循環し
て再使用されるものである。Then, the plating solution 7 flows down inside the processing section 28, passes through the discharge hole 38 of the lower receiving member 39, and passes through the discharge opening 3 of the processing tank main body 26.
1, the base body 25 is regulated by the second plating treatment tank 22.
It is discharged from the discharge hole 42. This discharged plating solution 30 is collected in a reservoir tank (not shown), and is further circulated and reused.
そして、メッキ処理の終了したウェハー２は、ウェハー
２のセント時とは逆に手動輪５１を回転し押圧本体４５
を上方へ移動させてウェハー２を取り外して交換するも
のである。Then, the wafer 2 that has been plated is rotated by the manual wheel 51 in the opposite direction to the time when the wafer 2 was sent, and the pressing body 45 is rotated.
The wafer 2 is removed and replaced by moving the wafer upward.
５４はカソード接点用のリード線であり、又押圧手段２
３は図示の例に限定されるものでなく、シリンダとピス
トンを用い空圧により所望のプレスを得るようにしても
よいものである。54 is a lead wire for the cathode contact, and the pressing means 2
3 is not limited to the illustrated example, and a cylinder and a piston may be used to obtain a desired press by pneumatic pressure.
尚、図示はしないが、上記実施例の押圧手段２３に代え
て押圧本体４５を回転自在とする回転手段を採用しても
良いものである。即ち、ネジ部５０．５２を廃止し、軸
４７にギヤ機構、歯車の如き回転力伝達手段を設け、モ
ータの如き駆動手段の回転力を前記回転力伝達手段を介
して伝達し押圧本体４５を回転自在とするものである。Although not shown in the drawings, a rotation means that allows the pressing body 45 to rotate may be used in place of the pressing means 23 of the above embodiment. That is, the threaded portions 50 and 52 are eliminated, and the shaft 47 is provided with a rotational force transmission means such as a gear mechanism or gears, and the rotational force of a driving means such as a motor is transmitted through the rotational force transmission means to push the pressing body 45. It is rotatable.
この回転手段を採用する場合、ウェハー２を適宜の保持
手段にて保持し、ウェハー２を回転させつつメッキ液７
を施すので、表面３の各微少部分が常に異なる小さな区
域５５毎のメッキ液７の噴射と液戻りを受け、メッキ液
７の流れの方向性の解消、メッキ条件のより一層の均一
、向上が達成し得るものである。When this rotation means is employed, the wafer 2 is held by an appropriate holding means, and the plating solution is removed while the wafer 2 is rotated.
As a result, each minute portion of the surface 3 receives the injection and liquid return of the plating solution 7 in different small areas 55, which eliminates the directionality of the flow of the plating solution 7 and further uniformizes and improves the plating conditions. It is achievable.
更に又ウェハー２の端部より不活性ガスを吹き出させ、
いわゆるエアカーテンにてメッキ液７の廻り込みを規制
することも十分に可能である。Furthermore, inert gas is blown out from the end of the wafer 2,
It is also possible to restrict the plating solution 7 from going around by using a so-called air curtain.
〈効 果〉
この発明に係る半導体ウェハーのメッキ方法は、以上説
明してきた如き内容のものなので、多くの効果が期待で
き、その内の主なものを列挙すると以下の通りである。<Effects> Since the semiconductor wafer plating method according to the present invention is as described above, many effects can be expected, and the main ones are listed below.
（イ）ウェハーの表面〔被メッキ面側〕には、この表面
面積に対し小さな区域毎にメッキ液の噴射と液戻りを行
ない、表面の全体にわたってメッキ液の均一な撹拌状態
を得るようにするので、半導体ウェハーの表面上で従来
見られたメッキ液流の方向性を解消することができ、
（ロ）小さな区域毎に撹拌されているメッキ液層により
ウェハーの表面〔被メッキ面側〕を覆ってイルので、電
流密度、金属イオン分布等のメッキ条件を安定化させ均
一にでき、
（ハ）方向性の解消、メッキ条件の均一化によりウェハ
ーに於けるレジスト面の位置にかかわらず形状、厚さ、
サイズ等の点で良好な金属メッキ層を形成でき製品の歩
留りを向上させることができ、（ニ）ウェハーの表面〔
被メッキ面側〕のメッキ液層内にて小さな区域毎にメッ
キ液の噴射と液戻りを行なってメッキ液の撹拌作用を生
ぜしめているので、仮令水素ガスが発生したとしても積
極的に除去でき、メッキの欠けを防止できるという効果
がある。(b) On the surface of the wafer (on the surface to be plated), spray the plating solution and return the solution in small areas relative to this surface area to obtain a uniform stirring state of the plating solution over the entire surface. Therefore, it is possible to eliminate the conventional directionality of plating liquid flow on the surface of a semiconductor wafer, and (b) the plating liquid layer stirred in small areas spreads over the surface of the wafer (on the surface to be plated). (c) By eliminating directionality and making the plating conditions uniform, the shape and shape can be maintained regardless of the position of the resist surface on the wafer. thickness,
It is possible to form a metal plating layer with good quality in terms of size, etc., improve product yield, and (d) wafer surface [
Since the plating solution is injected and returned to each small area within the plating solution layer on the surface to be plated, stirring the plating solution, even if hydrogen gas is generated, it can be actively removed. This has the effect of preventing chipping of the plating.
更に実施例によれば、
（ホ）パイプの開口面ば受液槽内に於いてベース側を向
いているので、処理槽内にて急激なメッキ液の浴出を生
ぜず、
（へ）ウェハーを保持した状態で回転させれば、ウェハ
ー表面は、メッキ液の噴射と液戻りが行なわれている各
小さな区域を相対的に変えてゆくことになるので、メッ
キ液の撹拌を促進し、より一層良好且つ均一なメッキ条
件が確保し得、更に発生した水素ガスの除去の点でもよ
り一層効果的であり、
（ト）手動輪の回転により押圧本体を上下方向へ移動さ
せれば、ウェハーの着脱、交換を極めて容易にできると
いう付随的な効果もある。Furthermore, according to the embodiment, (e) since the opening surface of the pipe faces the base side in the liquid receiving tank, there is no sudden plating solution leakage in the processing tank, and (f) the wafer By holding and rotating the wafer, the wafer surface changes relative to each small area where the plating solution is being sprayed and returned, which promotes agitation of the plating solution and improves its performance. It is possible to ensure better and more uniform plating conditions, and it is even more effective in terms of removing generated hydrogen gas. It also has the additional effect of being extremely easy to attach, detach, and replace.
第１図は、本発明に係る半導体ウェハーのメッキ方法の
一実施例にて用いられるメッキ装置を示す概略断面図、
第２図は、第１図に於いて噴射されたメッキ液の流動状
況を示す部分拡大断面図、
第３図は、従来の半導体ウェハーのメッキ方法でのメッ
キ液の流動状況を示す拡大断面図、第４図は、撹拌部の
形成状況を示す第３図中矢示■部の部分拡大断面図、
第５図は、第４図中矢示Ｖ部に形成される良好な金属メ
ッキ層を示す部分拡大断面図、第６図は、第３図中矢示
■部に形成される金属メ・７キ層を示す部分拡大断面図
、そして第７図は、ガスの発生によりメッキに欠けが発
生した状況を示す部分拡大断面図である。
ｌ、５３・・・・・・・・・噴射メッキ液流２・・・・
・・・・・・・ウェハー
３・・・・・・・・・・・表面
４・・・・・・・・・・・被メッキ面
７．１０．３０・・・・・・・メッキ液８・・・・・・
・・・・・撹拌部
９．１１．１４・・・・・・・メッキ層１２・・・・・
・・・・・・レジスト層４１・・・・・・・・・・・メ
ッキ液層第２図
第３図
第４図FIG. 1 is a schematic cross-sectional view showing a plating apparatus used in an embodiment of the semiconductor wafer plating method according to the present invention, and FIG. 2 shows the flow state of the plating solution sprayed in FIG. 1. 3 is an enlarged sectional view showing the flow of plating solution in a conventional semiconductor wafer plating method. FIG. FIG. 5 is a partial enlarged sectional view showing a good metal plating layer formed at the portion indicated by the arrow V in FIG. 4, and FIG. FIG. 7 is a partially enlarged cross-sectional view showing the seven metal plating layers, and FIG. 7 is a partially enlarged cross-sectional view showing a situation where the plating is chipped due to the generation of gas. l, 53......Spray plating liquid flow 2...
......Wafer 3...Surface 4...Surface to be plated 7.10.30...Plating solution 8...
... Stirring section 9.11.14 ... Plating layer 12 ...
・・・・・・Resist layer 41・・・・・・・・・Plating liquid layer Fig. 2 Fig. 3 Fig. 4
Claims (1)
して金属メッキ層を形成する半導体ウェハーのメッキ方
法に於いて、 上記半導体ウェハーの被メッキ面側の表面に、この表面
面積に対し小さな区域毎にメッキ液の噴射と液戻りを行
うことにより、全体にわたってメッキ液の均一な撹拌状
態を得て金属メッキ層を形成することを特徴とする半導
体ウェハーのメッキ方法。[Claims] In a semiconductor wafer plating method in which a plating solution is applied to a semiconductor wafer on which a resist layer has been formed to form a metal plating layer, the surface area of the semiconductor wafer on the side to be plated is A method for plating semiconductor wafers, characterized in that a plating solution is sprayed and returned to each small area to obtain a uniform stirring state of the plating solution over the entire area to form a metal plating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13829386A JPS62297493A (en) | 1986-06-16 | 1986-06-16 | Method for plating semiconductor water |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13829386A JPS62297493A (en) | 1986-06-16 | 1986-06-16 | Method for plating semiconductor water |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62297493A true JPS62297493A (en) | 1987-12-24 |
| JPH0240746B2 JPH0240746B2 (en) | 1990-09-13 |
Family
ID=15218499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13829386A Granted JPS62297493A (en) | 1986-06-16 | 1986-06-16 | Method for plating semiconductor water |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62297493A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05152222A (en) * | 1991-03-08 | 1993-06-18 | Motorola Inc | Method of forming material layer in semiconductor device using liquid phase deposition |
| JPH08253892A (en) * | 1995-03-16 | 1996-10-01 | Nippondenso Co Ltd | Plating device and plating method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58759A (en) * | 1981-03-30 | 1983-01-05 | ア−ルアイエイ・プロダクツ・インコ−ポレイテツド | Assay method through non-boiling degeneration |
-
1986
- 1986-06-16 JP JP13829386A patent/JPS62297493A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58759A (en) * | 1981-03-30 | 1983-01-05 | ア−ルアイエイ・プロダクツ・インコ−ポレイテツド | Assay method through non-boiling degeneration |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05152222A (en) * | 1991-03-08 | 1993-06-18 | Motorola Inc | Method of forming material layer in semiconductor device using liquid phase deposition |
| JPH08253892A (en) * | 1995-03-16 | 1996-10-01 | Nippondenso Co Ltd | Plating device and plating method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0240746B2 (en) | 1990-09-13 |
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|---|---|---|---|
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