JPS62293536A - Magneto-optical disk - Google Patents
Magneto-optical diskInfo
- Publication number
- JPS62293536A JPS62293536A JP13590186A JP13590186A JPS62293536A JP S62293536 A JPS62293536 A JP S62293536A JP 13590186 A JP13590186 A JP 13590186A JP 13590186 A JP13590186 A JP 13590186A JP S62293536 A JPS62293536 A JP S62293536A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- film
- layer
- test cell
- days
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 claims abstract description 94
- 229920006362 Teflon® Polymers 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 7
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 7
- 239000002861 polymer material Substances 0.000 claims abstract description 5
- 229920001721 polyimide Polymers 0.000 claims abstract description 4
- 239000004642 Polyimide Substances 0.000 claims abstract 2
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- 229910052796 boron Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 2
- 229910052758 niobium Inorganic materials 0.000 claims abstract 2
- 150000004767 nitrides Chemical class 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 229910052715 tantalum Inorganic materials 0.000 claims abstract 2
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 2
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 12
- 239000004809 Teflon Substances 0.000 claims description 8
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 23
- 230000003247 decreasing effect Effects 0.000 abstract description 14
- 230000006866 deterioration Effects 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 112
- 239000010410 layer Substances 0.000 description 48
- 230000007423 decrease Effects 0.000 description 15
- 239000010409 thin film Substances 0.000 description 9
- 239000002356 single layer Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
発明の詳細な説明
〔発明の利用分野〕
本発明は、レーザー光を用いて記録、再生、消去を行う
光磁気記録に係り、特に酸素及び水分等から磁気記録媒
体を保護するのに好適な保護膜の構造に関する。[Detailed Description of the Invention] Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to magneto-optical recording in which recording, reproduction, and erasing are performed using laser light, and in particular, the present invention relates to magneto-optical recording that uses laser light to perform recording, reproduction, and erasing. The present invention relates to a structure of a protective film suitable for protection.
近年、高密度で大容量の情報の任意読出し及び書換え可
能な光磁株記録が注目されている。この光磁気記録媒体
として、希土類−鉄族系非晶質が研究の中心にある。し
かしながら、これらの材料は、酸素や水分と容易に反応
して酸化物や水酸化物を生成する。そのために、光磁気
ディスクの特性、特τこカー回転角或いは保磁力の変動
が起っていた。そこで、従来の光磁気ディスクでは、記
録媒体保護のために、５ｉ０２．Ｓｉ○ｌＳｉ３Ｎ４゜
Ａ Ｑ Ｎ等を用いて、記録媒体上に約１０００〜１５
ｏＯ人の保護膜層を形成していた。この例として、特開
昭５９−１７１０５５をあげることができる。In recent years, magneto-optical records that can arbitrarily read and rewrite high-density, large-capacity information have been attracting attention. As this magneto-optical recording medium, rare earth-iron group amorphous materials are at the center of research. However, these materials easily react with oxygen and moisture to produce oxides and hydroxides. This has caused variations in the characteristics of the magneto-optical disk, such as the rotation angle or coercive force. Therefore, in conventional magneto-optical disks, 5i02. Approximately 1000 to 15
It formed a protective film layer for oO people. An example of this is JP-A-59-171055.
この保護膜は、真空蒸着、イオンブレーティング、スパ
ッタ、等の薄膜形成技術を駆使して形成さ九る。ところ
が、形成した薄膜には、ピンホールが存在する場合があ
り、そこから薄膜内部へ大気中の酸素や水分が拡散して
ゆき、記録媒体と反応して、記録媒体／保護膜界面に酸
化物または水酸化物層が形成される。この反応は記録媒
体界面から記録媒体内部へ徐々に進行してゆくため、時
間の経過に伴ないカー回転角や保磁力が減少するという
問題が生じた。そこで、光磁気ディスクの特性の安定化
及び長寿命化をめざすには、この点を解決する必要があ
る。This protective film is formed by making full use of thin film forming techniques such as vacuum evaporation, ion blasting, and sputtering. However, the formed thin film may have pinholes, through which oxygen and moisture in the atmosphere diffuse into the thin film, react with the recording medium, and form oxides at the recording medium/protective film interface. Or a hydroxide layer is formed. Since this reaction gradually progresses from the recording medium interface to the inside of the recording medium, a problem arises in that the Kerr rotation angle and coercive force decrease over time. Therefore, in order to stabilize the characteristics and extend the life of magneto-optical disks, it is necessary to solve this problem.
本発明の目的は、磁気記録媒体を大気中の酸素や水分か
ら保護し、光磁気特性の劣化を防止するのに有効な保護
膜構造を提供することにある。An object of the present invention is to provide a protective film structure that is effective in protecting a magnetic recording medium from oxygen and moisture in the atmosphere and preventing deterioration of magneto-optical characteristics.
先にも述べたように、光磁気記録媒体上に形成した保護
膜にはピンホールが存在する場合があり、そこを中心に
記録媒体の腐食が進行し、光磁気特性の変動を生じた。As mentioned above, pinholes may exist in the protective film formed on the magneto-optical recording medium, and corrosion of the recording medium progresses around these pinholes, causing fluctuations in the magneto-optical characteristics.
これを防止する１つの手法として記録媒体上に形成する
保護膜の膜厚を増加させることが考えられるが、この手
法を用いてもピンホールの数を減らすのみでゼロにする
ことはできない。そこで本発明は、従来の０．１〜１．
０μｍの膜厚に形成した第１層目の無機物の保護膜上に
、ピンホールを埋めるのが容易でかつ耐環境性に優れた
有機高分子物質でおおい、二層から成る保護膜を形成し
、ピンホールフリーな保護膜を作成するものである。そ
して、二層膜を作成する場合、第１層目に無機模、質、
第２層目に有機物とこの順序で積層する。しかし、無機
物と有機物とはいずれの組み合わせでも、密着性等特に
問題は生じなかった。One possible method for preventing this is to increase the thickness of the protective film formed on the recording medium, but even if this method is used, it will only reduce the number of pinholes, but will not eliminate them. Therefore, the present invention has an advantage of 0.1 to 1.
The first layer of inorganic protective film formed to a thickness of 0 μm is covered with an organic polymer material that is easy to fill pinholes and has excellent environmental resistance, forming a two-layer protective film. , which creates a pinhole-free protective film. When creating a two-layer film, the first layer has an inorganic pattern, texture,
The second layer is an organic substance and is laminated in this order. However, no particular problems such as adhesion occurred with any combination of inorganic and organic materials.
以下、本発明の詳細を実施例１〜５を用いて説明する。 The details of the present invention will be explained below using Examples 1 to 5.
〔実施例１〕
テストセルの構造は、第１図に示すように、洗浄したガ
ラス或いはエポキシ樹脂の基板１００上に、スパッタ法
により記録膜として厚さ０．１μｍのＴｂ ３０ Ｆｅ
ｒ、ｏｃｏｌ 。系非晶質薄膜２００を形成する。その
時のスパッタ条件は、放電ガス圧； ５ Ｘ １０−３
（Ｔｏｒｒ）、高周波電力；１．０５Ｗ／ａ＃、放電ガ
ス；Ａｒである。その上に、Ｔｌｌ Ｃｕｔ 或いはＷ
をターゲットに用いてスパッタ法で第１Ｎ目の保護膜３
００を約０．０５〜０．０７μｍの膜厚に形成する。こ
の時のスパッタ条件は、先の記録膜の作成条件と同じで
ある。[Example 1] As shown in FIG. 1, the structure of the test cell is such that a Tb 30 Fe film with a thickness of 0.1 μm is deposited as a recording film on a cleaned glass or epoxy resin substrate 100 by sputtering.
r, ocol. An amorphous thin film 200 is formed. The sputtering conditions at that time were: discharge gas pressure; 5 x 10-3
(Torr), high frequency power: 1.05 W/a#, discharge gas: Ar. On top of that, Tll Cut or W
The 1Nth protective film 3 is formed by sputtering using as a target.
00 is formed to have a film thickness of approximately 0.05 to 0.07 μm. The sputtering conditions at this time are the same as those for forming the recording film.
つづいて、この上にテフロンフィルムをターゲットに用
いてスパッタ法により膜厚＝０．１〜０．２μｍの第２
層目の保護膜４００を形成する。この時の条件は、高周
波電力を０ 、２ Ｗ ／ ｃｓｎとし、他の条件は先
の記録媒体の作成条件と同じである。Next, a second film with a thickness of 0.1 to 0.2 μm was applied on top of this by sputtering using a Teflon film as a target.
A second protective film 400 is formed. The conditions at this time were that the high frequency power was 0 and 2 W/csn, and the other conditions were the same as those for producing the recording medium.
ここで記録媒体の保護効果を増大させるためには、第１
図に示すように記録膜全体を保護膜により覆うの良い。In order to increase the protection effect of the recording medium, the first
It is best to cover the entire recording film with a protective film as shown in the figure.
このようにして作成したテストセルの保磁力（Ｈｅ）は
３ＫＯｅ、カー回転角（ＯＫ）は０．３５゜であった。The test cell thus prepared had a coercive force (He) of 3 KOe and a Kerr rotation angle (OK) of 0.35°.
本発明の二重構造の保護膜の保護効果は、温度７５℃に
て、湿度９０％の環境にテストセルを保存したときの、
Ｈｅ及びθ７の経時変化により評価した。比較のために
、第１層の無機物層のみを保護膜に用いた場合のＨｃと
０８の経時変化を測定した。その結果を第２図の曲線１
〜６に示す。曲＃！１は、第１層目にＴｉを用いた場合
、曲線２はＣｕを、そして曲線３はＷを、そして第２層
目は、いずれもテフロンを用いた場合である。The protective effect of the double-structured protective film of the present invention is as follows when the test cell is stored in an environment with a temperature of 75°C and a humidity of 90%.
Evaluation was made based on changes in He and θ7 over time. For comparison, changes over time in Hc and 08 were measured when only the first inorganic layer was used as a protective film. The result is curve 1 in Figure 2.
~6. song#! Curve 1 shows the case where Ti is used for the first layer, Curve 2 shows the case where Cu is used, Curve 3 shows the case where W is used, and Teflon is used for the second layer.
そして１曲線４〜６は１層のみの保護膜を有し、曲線４
はＴｉ、曲線５はＣｕ、曲線６はＷをそれぞれ用いた場
合である。また、図中の実線はθ３の。And one curve 4 to 6 has only one layer of protective film, and curve 4
is the case where Ti is used, curve 5 is Cu, and curve 6 is W. Moreover, the solid line in the figure is for θ3.
そして点線はＨｅの経時変化をそれぞれ示す。まず６０
日経過後までは本発明の保護膜構造のテストセルと一層
のみの保護膜からなるテストセルの間には差がみられな
かった。しかし、７０日経過後から一層のみの保護膜か
らなるテストセルの０８及びＨｃは徐々に減少してゆき
いずれの材料を用いた場合もほぼ同じで１００日経過後
でＯＫが初期の約８％１５０日後で１５％となった。ま
たＨｅの減少率はθにの場合より小さく、１００日後で
約５％、１５０Ｂ後で約１０％であった。The dotted lines each indicate the change in He over time. First 60
No difference was observed between the test cell with the protective film structure of the present invention and the test cell with only one layer of protective film until after a day had passed. However, after 70 days, the 08 and Hc of the test cell consisting of only one protective film gradually decreased, and when using any material, it was almost the same, and after 100 days it was OK, which was about 8% of the initial value after 150 days. It became 15%. Furthermore, the rate of decrease in He was smaller than in the case of θ, about 5% after 100 days and about 10% after 150B.
これに対して１本発明の二層の保護膜を有するテストセ
ルのθＫ及びＨｃの変動は、材料による差はみられず約
９０日経過後から始まり、まずθ７は約１００日経過後
で初期の約２％が、そして約１５０日経過した後で約５
％の減少がみられた。On the other hand, the fluctuations in θK and Hc of the test cell having the two-layer protective film of the present invention show no difference depending on the material and start after about 90 days, and first, θ7 changes from the initial value after about 100 days. 2%, and after about 150 days about 5
% decrease was observed.
また、Ｈｅの変動もθ３の場合と同じであった。Further, the variation in He was also the same as in the case of θ3.
このことより、保護膜を二層構造とする本発明により、
空気中の水分あるいいは酸素から磁気記録膜を保護する
ことができた。From this, the present invention in which the protective film has a two-layer structure,
It was possible to protect the magnetic recording film from moisture or oxygen in the air.
〔実施例２〕 テストセルの構造は、実施例１と同様である。[Example 2] The structure of the test cell is the same as in the first embodiment.
洗浄したガラス或いはエポキシ樹脂の基板１００上にス
パッタ法により記録膜として膜厚二０．１μｍのＴｂ３
ｏ Ｆａｇ ｏＣＯ３ｏ系非晶質薄膜２００を形成し、
つづいて第１層目の保護膜として、材料にＡ Ｑ Ｎ
、 Ｔ ａ Ｎ 、或いはＳｉ３Ｎ＊をターゲットに用
いて、窒素ガスを放電ガスとしスパッタ法により厚さ０
．１〜０．２μｍの膜３００を形成した。そして最後に
エポキシ樹脂フィルムをターゲットに用い、スパッタ法
により膜厚０．２〜０．３μｍの第２層目の保護膜４０
０を作成した。いずれの膜の作成条件とも、実施例１と
同様である。A Tb3 film with a thickness of 20.1 μm is formed as a recording film by sputtering on a cleaned glass or epoxy resin substrate 100.
o Fag oCO3o-based amorphous thin film 200 is formed,
Next, as the first layer of protective film, we added AQN to the material.
, T a N , or Si3N* as a target and a thickness of 0 by sputtering using nitrogen gas as a discharge gas.
．． A film 300 with a thickness of 1 to 0.2 μm was formed. Finally, using an epoxy resin film as a target, a second protective film 40 with a thickness of 0.2 to 0.3 μm is formed by sputtering.
0 was created. The conditions for forming both films were the same as in Example 1.
このようにして作成したテストセルの保磁力（Ｈｅ）は
３ＫＯｅ、カー回転角（θＫ）は０．３５”であった。The test cell thus prepared had a coercive force (He) of 3 KOe and a Kerr rotation angle (θK) of 0.35''.
保護膜による記録膜の保護効果は、テストセルを温度７
５℃、湿度９０％の環境で保存したときの、Ｈｅ及びθ
やの経時変化により評価した。同時に、保護膜が１層で
あるテストセルを作成し、本発明に二層構造を有する保
護膜と比較した。その結果を第３図に示す。曲線７〜９
は、本発明の保護膜構造を有するテストセルの０８及び
Ｈａの経時変化を、曲線１０〜１２は、一層からなる保
護膜を有するテストセルの０６及びＨｃの経時変化を示
す。まず１曲線７は第１層目の保護膜にＡｆｌＮを用い
た場合、曲線８はＴ ａ Ｎを。The protective effect of the protective film on the recording film is that the test cell is heated to a temperature of 7.
He and θ when stored at 5°C and 90% humidity
Evaluation was made by the change in color over time. At the same time, a test cell with a single-layer protective film was prepared and compared with the protective film of the present invention having a two-layer structure. The results are shown in FIG. Curves 7-9
Curves 10 to 12 show the time-dependent changes in 06 and Hc of the test cell having the protective film structure of the present invention. First, curve 7 shows the case where AflN is used as the first protective film, and curve 8 shows the case where T a N is used.
曲線９はＳｉ３Ｎ４を、そして第２層目の保護膜にいず
れもエポキシ樹脂を用いた場合である。そして５曲ｓ１
０〜１２は１層目のみの保護膜からなるテストセルで、
曲線１０はＡＱＮを、曲線１１はＴａＮを、曲線１２は
Ｓｉ２ Ｎ ４をそれぞれ用いた場合である。また、図
中の実線はθにのそして点線はＨｅの経時変化をそれぞ
れ示す。まず、７０日経過後までは、本発明の保護膜構
造を有するテストセルと従来の１層のみの保護膜からな
るテストセルの間には大きな差はなく、磁気特性の低下
はみられなかった。、８０日経過後から、一層のみの保
護膜からなるテストセルの０３及びＨｅは徐々に減少し
てゆき、１２０日経過後で、Ｈｅは初期の値の約８％、
ＯＫは約６％それぞれ減少した。さらに１５０日後では
、Ｈｅは１０％、θ７は９％それぞれ減少した。これに
対して、本発明の二層構造の保護膜を有するテストセル
のθＫ及びＨｅの変動は、１００日経過後から徐々には
じまり、１２０日後でＨｅ及びＯＫとともに初期の２％
の減少、１５０日後では、Ｈｅ及びＯＫともに約４％の
減少で、従来の一層からなる保護膜の場合より著しくそ
の変動は小さいことがわかった。以上のことより、保護
膜を二層構造とする本発明は著しく有効であることがわ
かった。Curve 9 is the case where Si3N4 and epoxy resin are used as the second protective film. And 5 songs s1
0 to 12 are test cells consisting of only the first layer of protective film,
Curve 10 shows the case where AQN is used, curve 11 uses TaN, and curve 12 uses Si2N4. Further, the solid line in the figure shows the change in θ and the dotted line shows the change in He over time. First, until 70 days had elapsed, there was no significant difference between the test cell having the protective film structure of the present invention and the conventional test cell having only one layer of protective film, and no deterioration in magnetic properties was observed. After 80 days, 03 and He in the test cell with only one layer of protective film gradually decreased, and after 120 days, He was about 8% of the initial value.
OK decreased by about 6% each. Furthermore, after 150 days, He decreased by 10% and θ7 decreased by 9%. On the other hand, the fluctuations in θK and He of the test cell having the two-layered protective film of the present invention gradually started after 100 days, and after 120 days, He and OK increased to 2% of the initial value.
After 150 days, both He and OK decreased by about 4%, which was found to be significantly smaller than in the case of the conventional single-layer protective film. From the above, it was found that the present invention in which the protective film has a two-layer structure is extremely effective.
〔実施例３〕 テストセルの構造は、実施例１と同様である。[Example 3] The structure of the test cell is the same as in the first embodiment.
洗浄したガラス或いはポリカーボネイト基板１００の上
に、スパッタ法により記録膜として厚さ二〇。１μｍの
Ｔｂ３０ Ｆｅ（１０Ｃａ１ｏ系非晶質薄膜２００を形
成する。その上に、ＳｉＣ，ＷＣ。A recording film with a thickness of 20 mm is formed on a cleaned glass or polycarbonate substrate 100 by sputtering. A 1 μm thick Tb30Fe(10Ca1o amorphous thin film 200 is formed. On top of that, SiC and WC are formed.
及びＴｉＣをターゲットに用いて、スパッタ法により、
膜厚０．１〜０．２μｍの第１項目の保護膜３００を形
成した。そして最後にポリイミド樹脂フィルムをターゲ
ットに用い、スパッタ法により膜厚０．２〜０．３μｍ
の第２層目の保護膜４００を作成した。いずれの膜の作
成条件とも、実施例１と同様である。And by sputtering using TiC as a target,
A protective film 300 of the first item having a film thickness of 0.1 to 0.2 μm was formed. Finally, using a polyimide resin film as a target, a film thickness of 0.2 to 0.3 μm was obtained by sputtering.
A second layer protective film 400 was created. The conditions for forming both films were the same as in Example 1.
このようにして作成したテストセルの保磁力（Ｈｅ）は
３ＫＯｅ、カー回転角（θＫ）は０，３５゜であった。The test cell thus prepared had a coercive force (He) of 3 KOe and a Kerr rotation angle (θK) of 0.35°.
保護膜による記Ｂ膜の保護効果は、テストセルを温度７
５℃、湿度９０％の環境で保存したときの、Ｈｅ及びＯ
Ｋの経時変化により評価した。同時に、保護膜が１層で
あるテストセルを作成し、本発明の二層構造を有する保
護膜と比較した。その結果を第４図に示す。曲線１３〜
１５は１本発明の保護膜を有するテストセルのθに及−
びＨｅの経時変化を、そして曲線１６〜１８は、一層か
らなる保護膜を有するテストセルのＯＫ及びＨｅの経時
変化をそれぞれ示す。また１曲線１３は第１層目の保護
膜にＳｉＣを用いた場合、曲線１４はＷＣを、そして曲
線１５はＴｉＣをそれぞれ用い、第２層目の保護膜にい
ずれもポリイミド樹脂を用いた場合である。曲線１６〜
１８は曲線１３〜１５の一層目と同じ材料をそれぞれを
用いたものである。また１図中の実線はθ３の、そして
点線はＨｅの経時変化をそれぞれ示す。まず、８０日経
過後までは、本発明の保護膜構造を有するテストセルと
従来の一層のみからなるテストセルの間には大差がなく
、磁気特性の低下はみられなかった。９ｏ〜１００日経
過後から、一層のみからなるテストセルのＨｅ及びθ３
の値が減少しはじめ、１２０日後で、Ｈｅは初期の値の
約５％に、θ３は初期の値の約７％にそれぞれ減少し、
１５０日後にはＨｅの減少は９％に、またθ８は１２％
にそれぞれ減少した。これに対して本発明の二層構造の
保護膜を有するテストセルの０８及びＨｅの変動は第１
層目の材料に関係なく１２０日後から始まり、１５０日
経過後でＨｃ及びθ８ともに初期値の約３％の減少と、
従来の一層からなる保護膜構造より、二層構造を有する
本発明の保護膜構造の方が、有効な保護効果を有してい
た。The protective effect of the B film is shown by the protective effect of the test cell at a temperature of 7.
He and O when stored at 5℃ and 90% humidity
Evaluation was made based on the change in K over time. At the same time, a test cell with a single protective film was prepared and compared with the protective film having a two-layer structure of the present invention. The results are shown in FIG. Curve 13~
15 is θ of the test cell having the protective film of the present invention.
Curves 16 to 18 show the OK and He changes over time for a test cell with a single-layer protective film, respectively. Curve 13 is when SiC is used as the first protective film, curve 14 is when WC is used, curve 15 is when TiC is used, and polyimide resin is used as the second protective film. It is. Curve 16~
18 uses the same material as the first layer of curves 13 to 15. In addition, the solid line in FIG. 1 shows the change in θ3, and the dotted line shows the change in He over time. First, until 80 days had elapsed, there was no significant difference between the test cell having the protective film structure of the present invention and the conventional test cell having only one layer, and no deterioration in magnetic properties was observed. After 90 to 100 days, He and θ3 of the test cell consisting of only one layer
The value of begins to decrease, and after 120 days, He decreases to about 5% of the initial value, θ3 decreases to about 7% of the initial value, and
After 150 days, He decreased by 9% and θ8 by 12%.
decreased respectively. On the other hand, the fluctuations in 08 and He of the test cell with the two-layer protective film of the present invention are the first.
Regardless of the material of the layer, it starts after 120 days, and after 150 days, both Hc and θ8 decrease by about 3% of the initial value,
The protective film structure of the present invention having a two-layer structure had a more effective protective effect than the conventional one-layer protective film structure.
〔実施例４〕 テストセルの構造は、実施例１と同様である。[Example 4] The structure of the test cell is the same as in the first embodiment.
洗浄したガラス或いは樹脂基板上１００上に、スパッタ
法で膜厚＝０．１μｍの
Ｔｂ３゜Ｆｅ２゜ＣＯｌ。系非晶質薄膜の記録膜層２０
０を形成する。その上に、Ｔａ２０５．Ｓｉｎ。A Tb3°Fe2°COl film having a thickness of 0.1 μm is deposited on a cleaned glass or resin substrate 100 by sputtering. Recording film layer 20 of amorphous thin film
form 0. On top of that, Ta205. Sin.
或いはＡＱ ２０３をターゲットに用いて、スパッタ法
により膜厚０．１〜０．２μｍの第１層目の保護膜３０
０を形成した。そして最後にテフロンフィルムをターゲ
ットに用い、スパッタ法により膜厚０．２〜０．３μｍ
の第２目の保護膜４００を作成した。いずれの膜とも実
施例１と同様の作成条件である。Alternatively, using AQ 203 as a target, the first protective film 30 with a film thickness of 0.1 to 0.2 μm is formed by sputtering.
0 was formed. Finally, using a Teflon film as a target, a film thickness of 0.2 to 0.3 μm was obtained by sputtering.
A second protective film 400 was created. All films were produced under the same conditions as in Example 1.
このようにして作成したテストセルの保磁力Ｈｃは３Ｋ
Ｏｅ、カー回転角（ＯＫ）は０．３５°であった。保護
膜により記録膜の保護効果は、テストセルを温度；７５
℃、湿度；９０％の環境で保存したときのＨｅ及びθ３
の経時変化により評価した。同時に、保護膜が１層であ
るテストセルを作成し、本発明の二層構造を有する保護
膜と比較した。その結果を第５図に示す。曲線１９〜２
１は、本発明の保護膜を有するテストセルのθつ及びＨ
ｃの経時変化を、そして曲線２２〜２４は、一層からな
る保護膜を有するテストセルのθヤ及びＨｅの経時変化
をそれぞれ示す。また、曲線１９は第１層目の保護膜に
Ｔａ２０５を、曲線２０はＳｉＯをそして曲線２１はＡ
Ｑ２０３をそれぞれ用い、第２層目の保護膜にいずれも
テフロンを用いた場合である。曲線２２〜２４は曲線１
９〜２１の一層目の材料と同じものを用いたものを示し
ている。また１図中の実線はθ３の、点線はＨｅの経時
変化をそれぞれ示す、これし；よると、８０日経過後ま
では、本発明の保護膜構造を有するテストセルと、従来
の一層のみからなるテストセルとの間に大きな差はみら
れず、磁気特性の変化はみられなかった。９０〜１００
日経過後から、−ｍのみからなるテストセルのＨｅ及び
θ８の値が減少しはじめ、１２０日後で保護膜にいずれ
の材料を用いた場合も、Ｈｅは初期の値の約２５％に、
θ３は初期の値の約４％にそれぞれ減少し、１５０日後
にはＨｅの減少は、保護膜にＴａ２０Ｂを用いた場合が
約１１％、ＳｉＯの場合が１０％、ＡＱ２０３の場合が
９％であった。また、Ｈｅの変化もθ８と同様、９０〜
１００日経過後あたりから減少しはじめ、１２０日経過
後で。The coercive force Hc of the test cell created in this way is 3K.
Oe and Kerr rotation angle (OK) were 0.35°. The protective effect of the recording film due to the protective film is that the temperature of the test cell is 75%.
He and θ3 when stored in an environment of ℃, humidity: 90%
Evaluation was made based on changes over time. At the same time, a test cell with a single protective film was prepared and compared with the protective film having a two-layer structure of the present invention. The results are shown in FIG. Curve 19-2
1 is the θ and H of the test cell having the protective film of the present invention.
Curves 22 to 24 show the time course of c and curves 22 to 24 show the time course of θ and He of a test cell with a single-layer protective film, respectively. Curve 19 uses Ta205 as the first protective film, curve 20 uses SiO, and curve 21 uses A
Q203 was used in each case, and Teflon was used as the second protective film in both cases. Curves 22-24 are curve 1
The same material as the first layer of Nos. 9 to 21 is used. In addition, the solid line in Figure 1 shows the change in θ3 and the dotted line shows the change in He over time.Accordingly, until 80 days have elapsed, the test cell with the protective film structure of the present invention and the conventional one-layer test cell were used. No significant difference was observed between the test cell and no change in magnetic properties. 90-100
After 1 day, the He and θ8 values of the test cell made only of -m began to decrease, and after 120 days, regardless of the material used for the protective film, the He value was about 25% of the initial value.
θ3 decreased to about 4% of the initial value, and after 150 days, the decrease in He was about 11% when using Ta20B as the protective film, 10% when using SiO, and 9% when using AQ203. there were. Also, the change in He is similar to θ8, 90~
It starts to decrease after 100 days and after 120 days.
Ｔａ２０５及びＳｉＯを用いた場合は４％、モしてＡＱ
２０３を用いた場合は、３％の減少がみられた。これに
対し、本発明の二層構造を有する保護膜構造の場合第１
層目の保３膜の材質によらず、はぼ等しい劣化曲線とな
った。本発明の場合、磁気特性が変化をはじめるのは、
１１０〜１２０日であり、１５０日経過後でＯＫは３％
、Ｈｅは２％と、その劣化は著しく小さかった。このよ
うに、本発明の保護膜構造の方が従来の単層膜の場合に
比べて有効な保護効果を有していた。4% when Ta205 and SiO are used, and AQ
When using 203, a 3% decrease was observed. On the other hand, in the case of the protective film structure having a two-layer structure according to the present invention, the first
The deterioration curves were almost the same regardless of the material of the third layer. In the case of the present invention, the magnetic properties start to change when
110-120 days, 3% OK after 150 days
, He was 2%, and the deterioration was extremely small. As described above, the protective film structure of the present invention had a more effective protective effect than the conventional single-layer film.
〔実施例５〕
光磁気ディスクの構造１２、図６に示すように、洗浄し
たビットパターンを形成しであるガラス或いは樹脂基板
（２８）上（ガラス等の基板上に直接あるいはその上に
形成されたＵＶ層にトラックを切っている。）に、スパ
ッタ法により記録膜として厚さ０．１μｍのＴｂ３０
Ｆａｇ 、）Ｃｏ１０系非晶質薄膜（２７）を形成する
。スパッタ条件は、実施例１と同様である。その上にＴ
ｉをターゲットに用いてスパッタ法により第１層目の保
護膜（２６）を形成し、つづいてテフロンをターゲット
に用いてスパッタ法により膜厚０．１〜０゜２μｍの第
２層目の保護膜（２５）を形成した。保護膜作成の場合
のスパッタ条件は、実施例１と同様である。[Example 5] Magneto-optical disk structure 12, as shown in FIG. Tracks are cut in the UV layer (Tb30) with a thickness of 0.1 μm as a recording film by sputtering.
A Co10-based amorphous thin film (27) is formed. The sputtering conditions are the same as in Example 1. T on top of that
A first layer of protective film (26) is formed by sputtering using Teflon as a target, and then a second layer of protection with a thickness of 0.1 to 0.2 μm is formed by sputtering using Teflon as a target. A film (25) was formed. The sputtering conditions for forming the protective film are the same as in Example 1.
このようにして作成した光磁気ディスクの初期特性は保
磁力Ｈｃは、４ＫＯｅ、カー回転角は０．３５°であっ
た。本発明の二層構造を有する保護膜の効果は、温度７
５°、湿度９０％の環境にディスクを保存したときのＨ
ｃ及び経時変化により評価した。比較のために、第１Ｍ
の無機物層（Ｔｉ）のみを保護膜に用いた場合の０８、
及びＨｅの経時変化も示した。その結果を図７に示す。The initial characteristics of the magneto-optical disk thus prepared were that the coercive force Hc was 4KOe and the Kerr rotation angle was 0.35°. The effect of the protective film having a two-layer structure of the present invention is
H when the disc is stored in an environment of 5° and 90% humidity.
Evaluation was made based on c and changes over time. For comparison, the 1st M
08 when using only the inorganic layer (Ti) as the protective film,
Also shown are the changes in He and He over time. The results are shown in FIG.
まず、図中の実線はθ８の経時変化をそして点線はＨｅ
のそれを示す。まず、一層からなる保護膜を有する場合
は、９０〜１００日経過後から変化をはじめ、１２０日
後でθつが初期の４％、 Ｈｅが３％減少し、１５０日
経過後で、θ、は１ｏ％、Ｈｃは７％の減少がみられた
。これに対し、本発明の二層構造を有する保護膜の場合
、１００日経過後付、近から劣化がはじまるが、変化率
は、一層の場合より著しく小さいことがわかる。すなわ
ち、１２０日経過後で０８は２％、Ｈｃは１％の減少、
そして１５０日経過後で０７は３％、Ｈｅは２％の減少
であった。このように、テストセルで得られた結果を光
磁気ディスクに適用した１例を示したが、テストセルで
の結果と同一であった。本発明の二層構造を有する保菌
膜構造は、記録膜の保護に有効である。First, the solid line in the figure represents the change in θ8 over time, and the dotted line represents the change in He
It shows that. First, in the case of a protective film consisting of a single layer, changes start to occur after 90 to 100 days, and after 120 days, θ decreases by 4% of the initial value, He decreases by 3%, and after 150 days, θ decreases by 10%, A 7% decrease in Hc was observed. On the other hand, in the case of the protective film having the two-layer structure of the present invention, deterioration begins after about 100 days, but the rate of change is significantly smaller than in the case of a single-layer structure. In other words, after 120 days, 08 decreased by 2%, Hc decreased by 1%,
After 150 days, 07 decreased by 3% and He decreased by 2%. As described above, an example was shown in which the results obtained with the test cell were applied to a magneto-optical disk, and the results were the same as those obtained with the test cell. The double-layered storage film structure of the present invention is effective in protecting the recording film.
尚、本発明の光磁気ディスクの構造は上述のものに限ら
れるものではなく、磁気記録層に上述の２層構造の保護
膜を形成したものであれば良く、基板と磁気記録層との
間に光学効果増幅また保護膜（Ｓｉ○、ＡｕＮ等）を形
成したものでも良い。The structure of the magneto-optical disk of the present invention is not limited to that described above, but may be any structure in which the above-mentioned two-layered protective film is formed on the magnetic recording layer, and between the substrate and the magnetic recording layer. It is also possible to form an optical effect amplification film or a protective film (Si○, AuN, etc.) on the film.
また、ａ低記録層としてＴｂ −Ｆｅ −Ｇｏ、 Ｇｄ
−Ｔ ｂ −Ｃｏ等の希土類−鉄族系非晶質薄膜他に
ＭｎＢ１等の材料等を用いても同様に耐凍性を向上させ
ることができる。In addition, as a low recording layer, Tb-Fe-Go, Gd
Freezing resistance can be similarly improved by using a rare earth-iron group amorphous thin film such as -T b -Co or other materials such as MnB1.
〔発明の効果〕
本発明によれば、磁気記録媒体及び光磁気ディスクを外
部環境から完全に遮断することができるので、大気中の
水分や酸素による記録媒体の酸化を防止する効果がある
。これにより光磁気ディスクの磁気特性を低下させるこ
となく、ディスクの長寿命化を達成することができた。[Effects of the Invention] According to the present invention, since the magnetic recording medium and the magneto-optical disk can be completely isolated from the external environment, there is an effect of preventing the oxidation of the recording medium due to moisture and oxygen in the atmosphere. This made it possible to extend the life of the magneto-optical disk without degrading its magnetic properties.
第１図はテストセルの断面図、第２〜５図は温度７５℃
、湿度９０％下でテストセルを保存したときの保磁力（
Ｈｃ ）及びカー回転角（θＫ）の経時変化を示す図、
第６図は光磁気ディスクの断面図、第７図は温度７５℃
、湿度９０％下でテストセルを保存したときの保磁力（
Ｈｃ ）及びカー回転角（θＫ）の経時変化を示す図で
ある。
１００・・・ガラス又は樹脂の基板
２００・・・磁気記録媒体
３００・・・第１層目の保護膜
４００・・・第２層目の保護膜
２５・・・第２層目の保護膜
２６・・・第１層目の保護膜
２７・・・磁気記録膜
２８・・・ガラス及び樹脂基板
２９・・・保護膜にＴｉを用いた場合
３０・・・保護膜にＴｉ−テフロンを用いた場合１・”
、へ。
代理人 弁理士 小 川 勝 男 ノ
４１図
箒２区
Ｉ３ 李Ｃ（Ｅっ
旧 取（Ｂつ
Ｂ 裂（８）
旧 訳（Ｆ３）
Ｂ ＫｃＢ）Figure 1 is a cross-sectional view of the test cell, Figures 2 to 5 are at a temperature of 75°C.
, coercive force when the test cell is stored under 90% humidity (
A diagram showing changes over time in Hc ) and Kerr rotation angle (θK),
Figure 6 is a cross-sectional view of the magneto-optical disk, Figure 7 is at a temperature of 75°C.
, coercive force when the test cell is stored under 90% humidity (
FIG. 3 is a diagram showing changes over time in Hc ) and Kerr rotation angle (θK). 100...Glass or resin substrate 200...Magnetic recording medium 300...First layer protective film 400...Second layer protective film 25...Second layer protective film 26 ...First layer protective film 27...Magnetic recording film 28...Glass and resin substrate 29...When Ti is used for the protective film 30...When Ti-Teflon is used for the protective film Case 1・”
,fart. Agent Patent Attorney Katsuo Ogawa No41 Figure 2 Section I3 Lee C
Claims (1)
層上に形成した無機物質からなる第１層目の保護膜と、
該第１の保護膜上に形成した有機高分子物質からなる第
２層目の保護膜を少なくとも有することを特徴とする光
磁気ディスク。 ２、無機物質の第１層目の保護膜として、Ａｌ、Ｓｉ、
Ｔａ、Ｂ、Ｚｒ、Ｎｂ、Ｗ、Ｍｏのうちから選ばれる少
なくとも１種類の金属の単体或いは窒化物、酸化物また
は炭化物を用いたことを特徴とする特許請求の範囲第１
項の光磁気ディスク。 ３、有機高分子物質の第２層目の保護膜として、エポキ
シ樹脂、ポリイミド、及びテフロンのうちから選ばれる
少なくとも１種類の物質を用いたことを特徴とする特許
請求範囲第１項の光磁気ディスク。[Claims] 1. A magnetic recording layer formed on a predetermined substrate; a first protective film made of an inorganic substance formed on the magnetic recording layer;
A magneto-optical disk comprising at least a second protective film made of an organic polymer material formed on the first protective film. 2. As the first layer of inorganic material protective film, Al, Si,
Claim 1, characterized in that at least one metal selected from Ta, B, Zr, Nb, W, and Mo is used alone, or as a nitride, oxide, or carbide.
Magneto-optical disk. 3. The magneto-optical device according to claim 1, characterized in that at least one kind of material selected from epoxy resin, polyimide, and Teflon is used as the second layer protective film of the organic polymer material. disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13590186A JPS62293536A (en) | 1986-06-13 | 1986-06-13 | Magneto-optical disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13590186A JPS62293536A (en) | 1986-06-13 | 1986-06-13 | Magneto-optical disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62293536A true JPS62293536A (en) | 1987-12-21 |
Family
ID=15162469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13590186A Pending JPS62293536A (en) | 1986-06-13 | 1986-06-13 | Magneto-optical disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62293536A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6320745A (en) * | 1986-07-14 | 1988-01-28 | Seiko Epson Corp | Magneto-optical recording medium |
| JPS63113835A (en) * | 1986-10-29 | 1988-05-18 | Kyocera Corp | Magneto-optical recording element |
| JPH01213849A (en) * | 1988-02-22 | 1989-08-28 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01307941A (en) * | 1988-06-06 | 1989-12-12 | Ricoh Co Ltd | Magneto-optical recording medium |
| JPH023133A (en) * | 1988-03-14 | 1990-01-08 | Teijin Ltd | Optical recording medium |
| JPH02152046A (en) * | 1988-12-02 | 1990-06-12 | Daicel Chem Ind Ltd | Magneto-optical medium |
| JPH02179947A (en) * | 1989-01-04 | 1990-07-12 | Ricoh Co Ltd | Magneto-optical recording medium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6150236A (en) * | 1984-08-18 | 1986-03-12 | Canon Inc | Magnetic recording medium |
-
1986
- 1986-06-13 JP JP13590186A patent/JPS62293536A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6150236A (en) * | 1984-08-18 | 1986-03-12 | Canon Inc | Magnetic recording medium |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6320745A (en) * | 1986-07-14 | 1988-01-28 | Seiko Epson Corp | Magneto-optical recording medium |
| JPS63113835A (en) * | 1986-10-29 | 1988-05-18 | Kyocera Corp | Magneto-optical recording element |
| JPH01213849A (en) * | 1988-02-22 | 1989-08-28 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH023133A (en) * | 1988-03-14 | 1990-01-08 | Teijin Ltd | Optical recording medium |
| JPH01307941A (en) * | 1988-06-06 | 1989-12-12 | Ricoh Co Ltd | Magneto-optical recording medium |
| JPH02152046A (en) * | 1988-12-02 | 1990-06-12 | Daicel Chem Ind Ltd | Magneto-optical medium |
| JPH02179947A (en) * | 1989-01-04 | 1990-07-12 | Ricoh Co Ltd | Magneto-optical recording medium |
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