JPS62291081A - Metal-insulator-metal type element - Google Patents
Metal-insulator-metal type elementInfo
- Publication number
- JPS62291081A JPS62291081A JP61133735A JP13373586A JPS62291081A JP S62291081 A JPS62291081 A JP S62291081A JP 61133735 A JP61133735 A JP 61133735A JP 13373586 A JP13373586 A JP 13373586A JP S62291081 A JPS62291081 A JP S62291081A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal electrode
- metal
- type carbon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 150000002739 metals Chemical class 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000002985 plastic film Substances 0.000 abstract description 2
- 229920006255 plastic film Polymers 0.000 abstract description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 1
- 229910001120 nichrome Inorganic materials 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
（技術分野）
本発明は、金属−絶縁物−金属（Ｍｅｔａｌ＝Ｉｎｓｕ
ｌａｔｏｒ −Ｍｅｔａｌ ；以下Ｍ−Ｉ−Ｍと略記す
る）構造を有する素子に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention (Technical Field) The present invention is a metal-insulator-metal (Metal=Insu
The present invention relates to an element having a lator-Metal (hereinafter abbreviated as M-I-M) structure.
（従来技術）
Ｍ−Ｉ−Ｍ構造を有する素子として、ダイオードがよく
知られており、このＭ−Ｉ−Ｍ型ダイオードは、液晶駆
動用スイッチング素子等への応用が期待されている。従
来、このＭ−４−Ｍ構造は、Ｔａ−Ｔａ２０５−Ｔａあ
るいは八ρ−ＡＮ２０３−１を等で構成されており、い
ずれも絶縁物として金属酸化物が使用されている（例え
ば特開昭５８−７９２８１号公報参照）。(Prior Art) A diode is well known as an element having an M-I-M structure, and this M-I-M type diode is expected to be applied to switching elements for driving liquid crystals and the like. Conventionally, this M-4-M structure has been composed of Ta-Ta205-Ta or 8ρ-AN203-1, and metal oxides have been used as insulators in both cases (for example, in JP-A-58 (Refer to Publication No.-79281).
しかしながら、この金属酸化物は、熱酸化法や陽極酸化
法で形成されるのが一般的であり、加熱工程を必要とす
るため、例えばＰＥＴなどプラスチックフィルム上にＭ
−Ｉ−Ｍ型ダイオードを形成することは困難である。例
えば、１゛ａを酸素中で熱酸化するためには、４００〜
５００℃に加熱する必要があり、基板は石英等の耐熱材
料に限られる。However, this metal oxide is generally formed by thermal oxidation or anodic oxidation, which requires a heating process.
-It is difficult to form an IM type diode. For example, in order to thermally oxidize 1゛a in oxygen, 400~
It requires heating to 500°C, and the substrate is limited to heat-resistant materials such as quartz.
また、陽極酸化法は、比較的低温で酸化物を形成できる
が、酸化剤、反応条件の最適化が難しく、さらに陽極酸
化後に１５０℃程度のアニールを施して酸化物の改質を
行なう必要がある。この他に、プラズマ酸化、酸素イオ
ンの打ち込み等の酸化法も用いられているが、これらの
場合も酸化膜の不均一性や、金属−酸化膜の界面状態の
不均一性が問題となる。In addition, although anodization can form oxides at relatively low temperatures, it is difficult to optimize the oxidizing agent and reaction conditions, and it is necessary to modify the oxide by annealing at about 150°C after anodization. be. In addition, oxidation methods such as plasma oxidation and oxygen ion implantation are also used, but these also pose problems such as non-uniformity of the oxide film and non-uniformity of the state of the metal-oxide film interface.
このように従来法では、基板材料が耐熱材料に限られる
とともに、工程が複雑で、また酸化膜や金属−酸化膜界
面状態の不均一性に起因して素子のＩ−Ｖ特性が良好な
ダイオード特性にならなかったり、素子間で特性がばら
−〕くという問題があった・
（発明の目的）
本発明は、十記問題点に鑑みてなされたもので、絶縁物
として新規の材料を使用することにより、室温で、しか
も再現性よく製造することができるＭ−Ｉ−Ｍ型構造の
素子を提供するものである。In this way, in the conventional method, the substrate material is limited to heat-resistant materials, the process is complicated, and due to the non-uniformity of the oxide film and the state of the metal-oxide film interface, it is difficult to obtain a diode with good I-V characteristics. The present invention has been made in view of the above ten problems, and uses a new material as an insulator. By doing so, it is possible to provide an element with an M-I-M type structure that can be manufactured at room temperature and with good reproducibility.
（発明の構成）
上記目的を解決するために、絶縁物として、ｉ型カーボ
ンを使用する。(Structure of the Invention) In order to solve the above object, i-type carbon is used as an insulator.
以下、実施例を用いて本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail using Examples.
（実施例）
第１図は、本発明の一実施例を示したもので、１はＰ
Ｅ Ｔフィルム等からなる基板、２は金属電極膜、３は
ｊ型カーボン膜、４は金属電極膜である。(Example) FIG. 1 shows an example of the present invention, where 1 is P
A substrate made of an ET film or the like, 2 a metal electrode film, 3 a J-type carbon film, and 4 a metal electrode film.
第２図は、その製造方法を示したものである。FIG. 2 shows the manufacturing method.
まず、基板１］−１にＡ Ｑ 、 Ｎ ｊＣｒ 、 Ｅ
″ａなどの金属電極膜２を、蒸着あるいはスパッタリン
グ等で形成する。その金属電極膜２−１−にレジスト膜
５を形成しく第２図（ａ））、これをマスクとしてエツ
チングして金属電極膜２をパターン化する（第２図（ｂ
））。First, A Q , N jCr , E
A metal electrode film 2 such as "a" is formed by vapor deposition or sputtering. A resist film 5 is formed on the metal electrode film 2-1- (FIG. 2(a)), and this is used as a mask for etching to form the metal electrode. Patterning the membrane 2 (Fig. 2(b)
)).
次に、ｊ型カーボン膜３を２０〜１００人の膜厚で形成
する（第２図（Ｃ））。さらにその−１−にへ〇等の金
属電極膜４を形成する（第２図（ｄ））、、なお］型カ
ーボン膜３をパターン化する場合は、金属電極膜４を形
成する前に、所要のパターンのレシス１へ膜５を形成し
く第２図（ｅ））、エツチングした後（第２図（ｆ））
、金属電極膜４を形成する（第２図（ｇ））。Next, a J-type carbon film 3 is formed to a thickness of 20 to 100 layers (FIG. 2(C)). Furthermore, when patterning the ] type carbon film 3, a metal electrode film 4 such as 〇 is formed on the -1- (Fig. 2 (d)), before forming the metal electrode film 4. After forming the film 5 on the resist 1 of the desired pattern (Fig. 2(e)) and etching (Fig. 2(f))
, a metal electrode film 4 is formed (FIG. 2(g)).
１型カーボン膜３の成膜は、第３図に示すようなプラズ
マＣＶＤ装置を使用する。チャンバー１１内に一対の平
行板電極１２．１３を設け、一方の電極］ ３−Ｉ：に
基板１をセットする。ガス導入［１１４より原料ガスを
チャンバー内に導入し、−・方真空ポンプによって排気
することでチャンバー１１内を一定圧力に保持する。一
対の電極１．２．１３間に高周波電力を印加し、グロー
放電を発生させることにより、原料ガスが分解し、基板
１上に１型カーボンが堆積する。なお基板１はヒータ１
５により任意の温度に加熱することも可能である。The type 1 carbon film 3 is formed using a plasma CVD apparatus as shown in FIG. A pair of parallel plate electrodes 12 and 13 are provided in the chamber 11, and the substrate 1 is set on one electrode] 3-I:. A raw material gas is introduced into the chamber through gas introduction [114] and is evacuated by a vacuum pump to maintain a constant pressure inside the chamber 11. By applying high frequency power between the pair of electrodes 1.2.13 and generating glow discharge, the source gas is decomposed and type 1 carbon is deposited on the substrate 1. Note that the substrate 1 is the heater 1
5, it is also possible to heat to any temperature.
高抵抗（ρ≧］（１”Ω・ｃｍ）のｌ型カーボン膜が得
られる条件は、ＣｌＩ４流量； １−１０ ｓｅｃｍ、
Ｈ２流量； １０−１００ ｓｃ：ｃｍ、ＣＨ４／ｌ
−Ｉ２； ２−３０容量％、圧力； ０．０１−０．
Ｉ Ｔ ｏｒｒＳＲＦパワー；２Ｏ−１００Ｗ、基板温
度；室温であった。特にρ≧１０１３Ω・■が得られる
のは、ＣＩＴ４／ＩＩ２が５容量％、ＣＨ４流量が５
ｓｃｅｍ、圧力が０．０２Ｔｏｒｒ、 ＲＦパワーが５
０Ｗ、基板温度が室温という各条件であった。The conditions for obtaining an l-type carbon film with high resistance (ρ≧] (1”Ω・cm) are: ClI4 flow rate; 1-10 sec;
H2 flow rate; 10-100 sc:cm, CH4/l
-I2; 2-30% by volume, pressure; 0.01-0.
IT orrSRF power: 2O-100W, substrate temperature: room temperature. In particular, ρ≧1013Ω・■ can be obtained when CIT4/II2 is 5% by volume and CH4 flow rate is 5%.
scem, pressure 0.02 Torr, RF power 5
The conditions were 0 W and the substrate temperature was room temperature.
以」二の方法により、室温で、Ｐ Ｅ Ｔフィルム上に
ＡＮ−ｊ型カーボン膜−Ａｆｆ型のダイオードを作製し
、ｊ型カーボン膜の膜厚が２０〜５０人のもので、しき
い値電圧ｖＩｈユＩＶ、
電流比Ｉ ｏＮ／ Ｉ ＯＦＦ≧１０！′であった。An AN-j type carbon film-Aff type diode was fabricated on a PET film at room temperature by the following method, and the thickness of the j type carbon film was 20 to 50 nm. Voltage vIh uIV, current ratio I oN/I OFF≧10! 'Met.
（発明の効果）
以」二説明したように、本発明によれば、Ｍ−Ｉ−Ｍ型
素子の絶縁物としてｊ型カーボンを使用することにより
、室温での素子の製造が可能となり、従ってプラスチッ
クフィルム等も基板として使用することができ、コスト
の低減に大きく寄与するものである。(Effects of the Invention) As explained below, according to the present invention, by using J-type carbon as the insulator of the M-I-M type element, it is possible to manufacture the element at room temperature. Plastic films and the like can also be used as the substrate, which greatly contributes to cost reduction.
第１図は、本発明の一実施例の構成図、第２図は、同実
施例の製造方法を示す図、第３図は、ｉ型カーボンの成
膜装置を示す図である。
１ ・・基板、 ２，４ ・・・金属電極膜、３・・・
ｌ型カーボン膜。
特許出願人 株式会社 リ コー
第１図
第３図
１３．５６ＭＨｚ
１昌
誹乳FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is a diagram showing a manufacturing method of the same embodiment, and FIG. 3 is a diagram showing an i-type carbon film forming apparatus. 1...Substrate, 2,4...Metal electrode film, 3...
l-type carbon film. Patent applicant: Ricoh Co., Ltd. Figure 1 Figure 3 13.56MHz 1.
Claims (1)
前記絶縁物として、ｉ型カーボンを使用することを特徴
とする金属−絶縁物−金属型素子。In an element made by sequentially laminating metals, insulators, and metals,
A metal-insulator-metal type element, characterized in that i-type carbon is used as the insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61133735A JPH0736453B2 (en) | 1986-06-11 | 1986-06-11 | Metal-insulator-metal element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61133735A JPH0736453B2 (en) | 1986-06-11 | 1986-06-11 | Metal-insulator-metal element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62291081A true JPS62291081A (en) | 1987-12-17 |
| JPH0736453B2 JPH0736453B2 (en) | 1995-04-19 |
Family
ID=15111689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61133735A Expired - Fee Related JPH0736453B2 (en) | 1986-06-11 | 1986-06-11 | Metal-insulator-metal element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0736453B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5142390A (en) * | 1989-02-23 | 1992-08-25 | Ricoh Company, Ltd. | MIM element with a doped hard carbon film |
| US5153753A (en) * | 1989-04-12 | 1992-10-06 | Ricoh Company, Ltd. | Active matrix-type liquid crystal display containing a horizontal MIM device with inter-digital conductors |
| US5202605A (en) * | 1988-10-31 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Mim cold-cathode electron emission elements |
| US5214416A (en) * | 1989-12-01 | 1993-05-25 | Ricoh Company, Ltd. | Active matrix board |
| US5319479A (en) * | 1990-09-04 | 1994-06-07 | Ricoh Company, Ltd. | Deposited multi-layer device with a plastic substrate having an inorganic thin film layer |
-
1986
- 1986-06-11 JP JP61133735A patent/JPH0736453B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5202605A (en) * | 1988-10-31 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Mim cold-cathode electron emission elements |
| US5142390A (en) * | 1989-02-23 | 1992-08-25 | Ricoh Company, Ltd. | MIM element with a doped hard carbon film |
| US5153753A (en) * | 1989-04-12 | 1992-10-06 | Ricoh Company, Ltd. | Active matrix-type liquid crystal display containing a horizontal MIM device with inter-digital conductors |
| US5214416A (en) * | 1989-12-01 | 1993-05-25 | Ricoh Company, Ltd. | Active matrix board |
| US5319479A (en) * | 1990-09-04 | 1994-06-07 | Ricoh Company, Ltd. | Deposited multi-layer device with a plastic substrate having an inorganic thin film layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0736453B2 (en) | 1995-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |