JPS62286579A - Method for coating substrate with resist - Google Patents

Method for coating substrate with resist

Info

Publication number
JPS62286579A
JPS62286579A JP13022186A JP13022186A JPS62286579A JP S62286579 A JPS62286579 A JP S62286579A JP 13022186 A JP13022186 A JP 13022186A JP 13022186 A JP13022186 A JP 13022186A JP S62286579 A JPS62286579 A JP S62286579A
Authority
JP
Japan
Prior art keywords
substrate
resist
applying
film
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13022186A
Other languages
Japanese (ja)
Other versions
JPH0659453B2 (en
Inventor
Shigeru Ogawa
茂 小川
Akiko Itou
伊藤 亮子
Yoshinori Kataoka
好則 片岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61130221A priority Critical patent/JPH0659453B2/en
Publication of JPS62286579A publication Critical patent/JPS62286579A/en
Publication of JPH0659453B2 publication Critical patent/JPH0659453B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0079Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a film having a thickness almost uniform up to the corner parts thereof by enhancing the wettability of a substrate with a resist, in forming a resist film to the substrate by a rotary coating method, by preliminarily applying pretreatment due to irradiation of ultraviolet rays and heat treatment to the substrate. CONSTITUTION:For example, in applying a resist to a square glass substrate 1b, said square substrate 1b is placed on a hot plate held to set temp. of 150-200 deg.C while pretreatment using a 65W low pressure mercury lamp as an ultraviolet ray source to irradiate the substrate with ultraviolet rays for 120sec is performed. By this method, the resist coating surface of the square substrate 1b is purified and the wettability thereof with the resist is improved. In this state, the square substrate 1b is sucked to and supported by the vacuum chuck 4 on a rotary shaft 3 rotating by a rotary drive mechanism 2 and coated with the resist according to a rotary coating method to form a film having a thickness uniform in the side and angle directions of the substrate.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔発明の目的〕 (産業上の利用分野)   ゛ 本発明は基板へのレジスト塗布方法に係り。[Detailed description of the invention] 3. Detailed description of the invention [Purpose of the invention] (Industrial application field) ゛ The present invention relates to a method of applying resist to a substrate.

特に角部などを有する基板の所定面に均一な膜厚の塗布
層を容易に形成しうるレジスト塗布方法に関する。
In particular, the present invention relates to a resist coating method that can easily form a coating layer of uniform thickness on a predetermined surface of a substrate having corners or the like.

(従来の技術) 例えば回路基板など所要のパターンを形成するに当って
フォトレジストをマスキング材として一般に使用してい
る。即ちフォトレジストを所定”の基板面に塗布し、露
光、現慮を施して所定゛のフォトレジストマスク(パタ
ーン)を作成してからエツチング処理や蒸着処理を施す
こ□とによって所望の回路パターンなどを形成している
。ところで上記レジスト膜の塗布形成において、′膜厚
の薄い塗布層を形成する場合、基板について純水洗浄或
いは加熱などの清浄化処理を施し゛た後、一般にスピン
塗布法(回転塗布法)によりレジスト塗布“塗布形成し
ている。しかし上記レジスト塗布゛におい゛て′は膜厚
の均一な塗膜を形成し難く、特′に基板が角部を有する
場合1例えば−辺250鵡の正方形の基板に回転塗布法
で塗布し、100℃で乾燥を施して形成した塗II!、
についてその膜厚を測定したところ第3図に示す如くで
あった。即ち辺方向についてはいずれの点(a)も膜厚
が1.2μmであったのに対して。
(Prior Art) Photoresist is generally used as a masking material when forming a required pattern on a circuit board, for example. In other words, photoresist is applied to a predetermined substrate surface, exposed to light, and a predetermined photoresist mask (pattern) is created, and then etched or vapor-deposited to create a desired circuit pattern. By the way, in coating and forming the above-mentioned resist film, when forming a thin coating layer, the spin coating method ( Resist coating is performed using the spin coating method. However, in the above-mentioned resist coating, it is difficult to form a coating film with a uniform thickness, especially when the substrate has corners. Coating II formed by drying at 100℃! ,
When the film thickness was measured, it was as shown in FIG. That is, in the side direction, the film thickness at all points (a) was 1.2 μm.

角方向における膜厚は中央寄りの点(′b)が1.2μ
m。
The film thickness in the angular direction is 1.2μ at the point ('b) near the center.
m.

内側の点(C)が2.3 μm 、点(d)が3.8μ
rnで基板(1)中央部に較べ角部の膜厚は3〜4倍で
あった。このように塗布膜について膜厚ムラが存在する
ことは。
Inner point (C) is 2.3 μm, point (d) is 3.8 μm
At rn, the film thickness at the corners of the substrate (1) was 3 to 4 times greater than that at the center. The existence of film thickness unevenness in the coating film as described above.

例えばフォトレジスI&布膜を形成し、露光、現儂を施
して所要のパターン化を行なう場合について考えてみる
とパターンの解像度の低下などを伴ない精度の低下をも
たらす。特に微細な回路を角形基板などく形成したい場
合1例えば液晶テレビなど小型表示装置用の回路基板を
製造する際においては、上記レジスト膜の膜厚ムラは所
定の回路パターンの形成を妨げる要因となっている。こ
のためレジスト塗布層を太き目の基板に形成し所要寸法
の角形基板を切り出すなど煩雑な操作を要する。
For example, if we consider the case where a photoresist I and a cloth film are formed and a desired pattern is formed by exposing and developing the film, the resolution of the pattern is lowered and the accuracy is lowered. Particularly when you want to form a fine circuit on a rectangular substrate 1 For example, when manufacturing circuit boards for small display devices such as LCD televisions, the unevenness of the resist film thickness becomes a factor that prevents the formation of a predetermined circuit pattern. ing. This requires complicated operations such as forming a resist coating layer on a thick substrate and cutting out a rectangular substrate of required dimensions.

(発明が解決しようとする問題点) 本発明は上記事情に対処して、基板に略均−な膜厚のレ
ジスト膜を容易に形成することのできる実用的なレジス
ト塗布方法を提供しようとするものである。
(Problems to be Solved by the Invention) The present invention addresses the above-mentioned circumstances and seeks to provide a practical resist coating method that can easily form a resist film of approximately uniform thickness on a substrate. It is something.

〔発明の構成〕[Structure of the invention]

(問題を解決するための手段) 本発明は1回転塗布法によって基板にレジストを塗布す
るに当って、予め基板に紫外線照射および力1熱処理に
よる前処理を施した場合、レジストに対する基板の濡れ
性が著しく改善され、均一な塗膜が形成されることに着
目してなされたものである。即ち本発明は基板に回転塗
布法でレジスト膜を形成するに当り、予め基板のレジス
ト塗布面に紫外線照射処理と同時または事前に加熱処理
とを施しておくことを要点とするものである。
(Means for Solving the Problems) The present invention provides that when a resist is applied to a substrate by a one-turn coating method, the wettability of the substrate with respect to the resist is improved when the substrate is pretreated by ultraviolet irradiation and heat treatment. This was developed with the focus on the fact that the coating film is significantly improved and a uniform coating film is formed. That is, in forming a resist film on a substrate by the spin coating method, the main point of the present invention is to heat-treat the resist-coated surface of the substrate at the same time as or in advance of ultraviolet irradiation treatment.

(作用) 上記の如く基板の所定面(レジスト塗布面)について加
熱処理によって昇温化した状態下で紫外線照射処理を予
め施した場合には、その処理面の清浄化が効果的【行な
わ・れ、もってレジストに対する濡れ性が改善される。
(Function) If the predetermined surface (resist coated surface) of the substrate is subjected to ultraviolet irradiation treatment in advance under a state where the temperature is raised by heat treatment as described above, cleaning of the treated surface is effective. , thereby improving the wettability to the resist.

かくして回転塗布法にてレジストを塗布した場合、基板
の辺方向および角方向において膜厚ム2のみられない(
IiK厚均一)塗膜が容易に且つ常に形成される。
In this way, when the resist is applied using the spin coating method, no film thickness difference 2 is observed in the side and corner directions of the substrate (
IiK (uniform thickness) coatings are easily and consistently formed.

(実施例) 以下本発明の詳細な説明する。先ず厚さ1關1辺の長さ
250朋の正方形のガラス製角形基板を用意し、この角
型基板を設定温度150〜200℃のホットプレート上
に略水平に載置する一方、65Wの低圧水銀ランプを紫
外線源として120秒間紫外線を角形基板面゛に照射し
た。かくして角形基板について紫外線照射処理と加熱処
理とを施し、角形基板の所定面(レジスト塗布面)を清
浄化した。次いで第1図に示す如、<1回転駆動機構(
2)によって回転する回転軸(3)に装着された真壁チ
ャック(4)にて、前記角形基板(1b)を吸着支持さ
せた。なおこの角形基板(1b)の真空チャック8(4
)による吸着支持は前記基板(1b)の処理面に対し反
対側の面を真空チャック(4)illとしている。しか
る後、上記真空チャック(4)にて支持された角形基板
(1b)の上面(処理面)の中心部に例えば粘度30 
C1)8のレジストを滴下し、続いて回転駆動機構(2
)を駆動して真空チャック(4)に吸着支持されている
角形基板(1b)を回転させる。この角形基板(1b)
の回転は例えば5Qr、p6m程度の低速回転によって
前記滴下しであるレジストを角形基板(1b)面に先ず
拡げ1次いで例えば3500 r、f)、m *度の高
速回転に切り換えて、上記レジストを回転による遠心力
で角形基板(1b)の外周縁方向へさらく拡げることに
よって所要のレジスト塗布がなされる。第2図は上記回
転塗布後110℃で乾燥を施して形成したレジスト塗布
層の厚さの状態を示したもので辺方向および角方向とも
略均−な膜厚であった。なお第2図において点(a)は
膜厚1.2μm1点(a)は膜厚1.3μmである。
(Example) The present invention will be described in detail below. First, a rectangular glass substrate with a thickness of 250 mm per side is prepared, and this rectangular substrate is placed approximately horizontally on a hot plate with a set temperature of 150 to 200°C, while being heated at a low pressure of 65 W. The surface of the rectangular substrate was irradiated with ultraviolet light for 120 seconds using a mercury lamp as an ultraviolet source. In this manner, the square substrate was subjected to ultraviolet irradiation treatment and heat treatment, and a predetermined surface (resist-coated surface) of the square substrate was cleaned. Next, as shown in Fig. 1, <1 rotation drive mechanism (
The rectangular substrate (1b) was suction-supported by the Makabe chuck (4) attached to the rotating shaft (3) rotated by the method 2). It should be noted that the vacuum chuck 8 (4) of this square substrate (1b)
), the surface opposite to the processing surface of the substrate (1b) is used as a vacuum chuck (4) ill. After that, the center part of the upper surface (processing surface) of the rectangular substrate (1b) supported by the vacuum chuck (4) is coated with a material having a viscosity of, for example, 30.
C1) 8 resists are dropped, and then the rotation drive mechanism (2
) to rotate the rectangular substrate (1b) suction-supported by the vacuum chuck (4). This square board (1b)
First, the dropped resist is spread on the surface of the rectangular substrate (1b) by rotating at a low speed of, for example, 5 Qr, p6 m.Then, the resist is rotated at a high speed of, for example, 3500 r, f), m* degrees, and the resist is spread. The required resist coating is performed by further spreading the resist toward the outer periphery of the rectangular substrate (1b) due to centrifugal force caused by rotation. FIG. 2 shows the thickness of the resist coating layer formed by drying at 110 DEG C. after the spin coating, and the thickness was approximately uniform in both the side and corner directions. In FIG. 2, point (a) has a film thickness of 1.2 μm, and point (a) has a film thickness of 1.3 μm.

上記実施例においては、基板に対する紫外線照射処理と
加熱処理とを同時に行なったが、この処理は加熱処理を
先ず行ない1次いで紫外線照射処理を行なりてもよい。
In the above embodiments, the ultraviolet irradiation treatment and the heat treatment on the substrate were performed at the same time, but the heat treatment may be performed first and then the ultraviolet irradiation treatment may be performed.

即ちこの前処理における加熱処理は紫外線照射処理を助
長するものである故。
That is, the heat treatment in this pretreatment promotes the ultraviolet irradiation treatment.

予め加熱処理し引続いて紫外線照射処理を行なっても支
障ない。しかして上記加熱処理のための加熱源はホット
プレートに限らず他の手段でもよく。
There is no problem even if heat treatment is performed in advance and then ultraviolet irradiation treatment is performed. However, the heat source for the above-mentioned heat treatment is not limited to a hot plate, but other means may be used.

また紫外線照射のための紫外線源も低圧水銀ランプに限
らない。一方回転塗布において上記では回転を低速−高
速の2段切換えで行なったが、さらに多段的に切換えて
もよいし、また逆に定速回転で行なうこともできる。要
は使用するレジストの粘度など考慮して適宜選択すれば
よい。さらに基板は上記形状に限らず例えば角部に丸み
をもたせたものなどでもよい。
Furthermore, the ultraviolet source for ultraviolet irradiation is not limited to a low-pressure mercury lamp. On the other hand, in the rotary coating, the rotation was performed in two stages of low speed and high speed in the above example, but it may be changed in more stages, or conversely, rotation can be performed at a constant speed. In short, it may be selected appropriately taking into consideration the viscosity of the resist used. Further, the shape of the substrate is not limited to the above shape, and may have rounded corners, for example.

なおレジストを塗布するに先立つ基板の前処理は紫外線
照射のみでも均一な膜厚の塗布層形成に有効ではあるが
照射処理に比較的長時間を要するため量産性の点から実
用上十分満足しうるとは云い難い。
Although the pretreatment of the substrate prior to resist coating is effective in forming a coated layer with a uniform thickness by irradiation with ultraviolet rays alone, the irradiation process requires a relatively long time, so it is not practical enough from the point of view of mass production. It's hard to say.

〔発明の効果〕〔Effect of the invention〕

上記具体例から明らかの如く本発明によれば基板1例え
ば液晶表示素子用の四角形の基板などに対して全面略均
−な膜厚のレジスト塗布層を形成しつる。しかしてこの
種基板の所定面に対して膜厚ムラのない均一な塗膜層を
容易に形成しうることは1例えばフォトレジストを塗布
し、露光。
As is clear from the above specific examples, according to the present invention, a resist coating layer having a substantially uniform thickness is formed over the entire surface of the substrate 1, such as a rectangular substrate for a liquid crystal display element. However, one way to easily form a uniform coating layer with no uneven thickness on a predetermined surface of a substrate is to apply, for example, a photoresist and expose it to light.

現像処理を施してマスクパターンなど作成する場合に特
に有効である。即ち上記レジスト塗布層は膜厚ムラがな
いため路光工程において解像度のバラツキもなくなり、
また現倭処理におけるサイドエツチングのバラツキやレ
ジスト残りもなくなり、所望の回路パターンなどを精度
よく形成しうるからである。勿論フォトレジストを用い
たマスク形成の場合に限らず、一般塗膜層の形成にも適
用できる。即ち膜厚にムラなく美観など良好で、しかも
基板から剥離し難い塗膜層の形成が可能である。
This is particularly effective when developing a mask pattern or the like. In other words, since the resist coating layer has no thickness unevenness, there is no variation in resolution during the optical path process.
Furthermore, variations in side etching and residual resist in the current Japanese process are eliminated, and desired circuit patterns can be formed with high precision. Of course, the present invention is not limited to forming a mask using a photoresist, but can also be applied to forming a general coating layer. That is, it is possible to form a coating layer that is uniform in thickness, has a good appearance, and is difficult to peel off from the substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明方法を説明するための説明図。 第2図は本発明の一実施例によって角形基板に塗布形成
したレジスト膜厚の分布状態を模写的に示す平面図、第
3図は従来方法によって角形基板に塗布形成したレジス
ト膜厚の分布状態を模写的に示す平面図である。 σb)1友  (2) β声μ珈膚精 m     mt#14       (SL)   
pEケ+  ・y 、7代理人 弁理士  則 近 憲
 借 間   竹 花 喜久男 第2図   第3図
FIG. 1 is an explanatory diagram for explaining the method of the present invention. FIG. 2 is a plan view schematically showing the distribution of the thickness of a resist film coated on a rectangular substrate according to an embodiment of the present invention, and FIG. 3 is a schematic plan view showing the distribution of the thickness of a resist film coated and formed on a rectangular substrate by a conventional method. FIG. σb) 1 friend (2) β voiceμ Kohadasei m mt#14 (SL)
pEke+ ・y, 7 Agent Patent Attorney Nori Chika Rent a space Kikuo Takehana Figure 2 Figure 3

Claims (3)

【特許請求の範囲】[Claims] (1)加熱された基板のレジスト被塗布面に紫外線照射
処理を施す工程と、前記紫外線照射処理した基板の処理
面の略中央部にレジストを滴下し、その基板を回転させ
、この回転に伴なう遠心力にて前記レジストを滴下した
基板面全面にレジストを塗布する工程とを有することを
特徴とする基板へのレジスト塗布方法。
(1) A step of applying ultraviolet ray irradiation to the resist-coated surface of the heated substrate, dropping a resist onto the approximate center of the treated surface of the substrate that has been subjected to the ultraviolet irradiation treatment, rotating the substrate, and following the rotation. A method for applying a resist to a substrate, comprising the step of applying the resist to the entire surface of the substrate onto which the resist has been dropped using centrifugal force.
(2)紫外線照射処理において低圧水銀ランプを紫外線
照射源として用いることを特徴とする特許請求の範囲第
1項記載の基板へのレジスト塗布方法。
(2) A method for applying a resist to a substrate according to claim 1, wherein a low-pressure mercury lamp is used as an ultraviolet irradiation source in the ultraviolet irradiation treatment.
(3)基板の回転によるレジスト塗布において、基板の
回転を低速次いで高速と切り換えることを特徴とする特
許請求の範囲第1項または第2項記載の基板へのレジス
ト塗布方法。
(3) A method for applying resist to a substrate according to claim 1 or 2, characterized in that in applying resist by rotating the substrate, the rotation of the substrate is switched from low speed to high speed.
JP61130221A 1986-06-06 1986-06-06 Method of applying resist to substrate Expired - Lifetime JPH0659453B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61130221A JPH0659453B2 (en) 1986-06-06 1986-06-06 Method of applying resist to substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61130221A JPH0659453B2 (en) 1986-06-06 1986-06-06 Method of applying resist to substrate

Publications (2)

Publication Number Publication Date
JPS62286579A true JPS62286579A (en) 1987-12-12
JPH0659453B2 JPH0659453B2 (en) 1994-08-10

Family

ID=15028981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61130221A Expired - Lifetime JPH0659453B2 (en) 1986-06-06 1986-06-06 Method of applying resist to substrate

Country Status (1)

Country Link
JP (1) JPH0659453B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797647B2 (en) 2001-06-19 2004-09-28 Matsushita Electric Industrial Co., Ltd. Method for fabricating organic thin film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541864A (en) * 1978-09-20 1980-03-24 Fuji Photo Film Co Ltd Spin coating method
JPS5994823A (en) * 1982-11-24 1984-05-31 Ushio Inc Ultraviolet purifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541864A (en) * 1978-09-20 1980-03-24 Fuji Photo Film Co Ltd Spin coating method
JPS5994823A (en) * 1982-11-24 1984-05-31 Ushio Inc Ultraviolet purifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797647B2 (en) 2001-06-19 2004-09-28 Matsushita Electric Industrial Co., Ltd. Method for fabricating organic thin film

Also Published As

Publication number Publication date
JPH0659453B2 (en) 1994-08-10

Similar Documents

Publication Publication Date Title
KR970702222A (en) COATING OF SUBSTRATES
JPH035573B2 (en)
JPS62286579A (en) Method for coating substrate with resist
US3986876A (en) Method for making a mask having a sloped relief
JPS63185028A (en) Manufacture of semiconductor device
JPS6137774B2 (en)
US3951659A (en) Method for resist coating of a glass substrate
KR100837338B1 (en) Exposure device for non planar substrate, patterning method for non planar substrate using the device and patterned non planar substrate using the method thereof
JPH0475025A (en) Lcd panel
JPH0519265A (en) Method for forming liquid crystal oriented film
JPS61265822A (en) Formation of thin metal film
JPS593430A (en) Formation of photoresist film
JPH02259622A (en) Covering of base body panel for liquid crystal cell
JPS5823735B2 (en) Method for producing tantalum layers for thin film capacitors or thin film resistors
JPS6151414B2 (en)
KR100269616B1 (en) Method of forming resist pattern
JP2894772B2 (en) X-ray window manufacturing method
JPS62274722A (en) Formation of resist film
KR100384877B1 (en) A method for coating photoresist
JP2617923B2 (en) Pattern formation method
JPS63234530A (en) Resist periphery removing device
JPS6353925A (en) Resist mask coating
JPH02295107A (en) Manufacture of semiconductor device
JPS6250759A (en) Method for preventing contamination of rear side of substrate
JPH07147220A (en) Method of drying coating film