JPS62278198A - Production of black star sapphire by light-conversion floating zone process - Google Patents
Production of black star sapphire by light-conversion floating zone processInfo
- Publication number
- JPS62278198A JPS62278198A JP12182686A JP12182686A JPS62278198A JP S62278198 A JPS62278198 A JP S62278198A JP 12182686 A JP12182686 A JP 12182686A JP 12182686 A JP12182686 A JP 12182686A JP S62278198 A JPS62278198 A JP S62278198A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- light
- floating zone
- black star
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 10
- 239000010980 sapphire Substances 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000006243 chemical reaction Methods 0.000 title abstract 3
- 239000002994 raw material Substances 0.000 claims abstract description 11
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 5
- 229910000428 cobalt oxide Inorganic materials 0.000 claims abstract description 5
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims abstract description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000654 additive Substances 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000003786 synthesis reaction Methods 0.000 abstract description 4
- 239000010437 gem Substances 0.000 abstract 1
- 229910001751 gemstone Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 238000005204 segregation Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明
〔産業上の利用分野)
本発明はブラックスターサファイアの製造方法に関する
◎
〔従来の技術〕
ブラックスターサファイアは、天然、合成共に存在しな
かった。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method for producing black star sapphire ◎ [Prior art] Black star sapphire did not exist, neither natural nor synthetic. .
しかしながら、ブラックスターサファイアは宝石部材と
して有望であるが、現在までのところその合成技術は確
立されていなかった。そこで本発明はこのような問題点
を解決するもので、その目的とするところは、宝石部材
としてのブラックスターサファイアの合成技術を提供す
るところにある。However, although black star sapphire is promising as a jewelry component, the synthesis technology for it has not been established to date. The present invention is intended to solve these problems, and its purpose is to provide a synthesis technique for black star sapphire as a jewelry member.
本発明のブラックスターサファイアの製造方法は基本組
成として酸化アルミニウムと、添加物として酸化クロム
、酸化チタン、酸化鉄、酸化コバルトからなる原料を使
用し集光フローティングゾーン法により合成することを
特徴とする。The method for producing black star sapphire of the present invention is characterized by using a raw material consisting of aluminum oxide as a basic composition and chromium oxide, titanium oxide, iron oxide, and cobalt oxide as additives, and synthesizing it by a condensed floating zone method. .
以下、本発明について実施例に基づき詳細に説明する。 Hereinafter, the present invention will be described in detail based on examples.
第1表は本発明に使用した原料の組成を示した物である
。まず第1表の組成となる様秤量した後、蒸留水により
十分混合し、200℃で1時間乾燥した・乾燥した混合
物をできるだけ細かく粉砕しゴムチューブに外径約10
語、長さ約100腸になる様に詰め、静水圧発生装置に
て1ton/cJの圧力で約5分間加圧、成形した。こ
れにより得られた丸棒状試料を電気炉にて1600℃で
4時間焼結し焼結原料棒を3種類得た。この焼結原料棒
を集光yz炉の上側にそれぞれセットし、種結晶として
ベルヌイルビーを下(11i1にセットする。ハロゲン
ランプのパワーを原料棒種結晶相方の先端が溶けるまで
除々に上げる。そして相方の先端が溶けた所で原料棒を
静かに降下させ相方を融着させる。融着した所で原料棒
と種結晶を良くなじませるため1時間そのままの状態で
保持し、1時間後に2 W / Hのスピードで結晶育
成させた。Table 1 shows the composition of the raw materials used in the present invention. First, the composition was weighed so as to have the composition shown in Table 1, and then thoroughly mixed with distilled water and dried at 200℃ for 1 hour.
The pieces were packed to a length of about 100 intestines, and pressed and molded using a hydrostatic pressure generator at a pressure of 1 ton/cJ for about 5 minutes. The round rod-shaped samples thus obtained were sintered in an electric furnace at 1600° C. for 4 hours to obtain three types of sintered raw material rods. Set each of these sintered raw material rods on the upper side of the condensing YZ furnace, and set the Bernoulbee lower (11i1) as a seed crystal. Gradually increase the power of the halogen lamp until the tip of the raw material rod seed crystal partner melts. Then At the point where the tip of the partner is melted, the raw material rod is gently lowered and the partner is fused.At the fused place, the raw material rod and the seed crystal are held in that state for 1 hour to blend well, and after 1 hour, 2 W The crystals were grown at a speed of /H.
その結果30時間後に長さ約60腸、外径約7襲の黒い
色の結晶を得た。この結晶を観察したところ、実施例3
においては添加量が多過ぎたため結晶中心部に偏析が発
生し、クラックが入っていた。As a result, after 30 hours, black crystals with a length of about 60 squares and an outer diameter of about 7 squares were obtained. When this crystal was observed, it was found that Example 3
Because the amount added was too large, segregation occurred in the center of the crystal, resulting in cracks.
残、る実施例1,2については偏析は見られなかっ\た
。そこで実施例1.2について1300℃で30時間熱
処理しカボノション形にカットしたところ、実施例1に
ついては色が灰色に近くスター効果も不鮮明であった。No segregation was observed in the remaining Examples 1 and 2. Therefore, when Examples 1 and 2 were heat-treated at 1300° C. for 30 hours and cut into cabonochon shapes, the color of Example 1 was close to gray and the star effect was not clear.
実施例2については色も良くスター効果も大変鮮明であ
った。In Example 2, the color was good and the star effect was very clear.
第 1 表
〔発明の効果〕
以上述べた様に本発明によれば、基本組成として酸化ア
ルミニウムと添加物として酸化クロム、酸化チタン、酸
化鉄、酸化コバルトからなる原料を使用し集光フローテ
ィングゾーン法で合成することにより、宝石部材として
有望であるブラックスターサファイアの合成が可能とな
った。Table 1 [Effects of the Invention] As described above, according to the present invention, the light-concentrating floating zone method uses a raw material consisting of aluminum oxide as a basic composition and chromium oxide, titanium oxide, iron oxide, and cobalt oxide as additives. The synthesis of black star sapphire, which is promising as a jewelry component, has become possible.
以 上that's all
Claims (1)
クロム、酸化チタン、酸化鉄、酸化コバルトからなる原
料を使用し集光フローティングゾーン法により合成する
ことを特徴とする集光フローティングゾーン法によるブ
ラックスターサファィアの製造方法。Black star sapphire is synthesized by the light-concentrating floating zone method using raw materials consisting of aluminum oxide as the basic composition and chromium oxide, titanium oxide, iron oxide, and cobalt oxide as additives. manufacturing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12182686A JPS62278198A (en) | 1986-05-27 | 1986-05-27 | Production of black star sapphire by light-conversion floating zone process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12182686A JPS62278198A (en) | 1986-05-27 | 1986-05-27 | Production of black star sapphire by light-conversion floating zone process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62278198A true JPS62278198A (en) | 1987-12-03 |
Family
ID=14820886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12182686A Pending JPS62278198A (en) | 1986-05-27 | 1986-05-27 | Production of black star sapphire by light-conversion floating zone process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62278198A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0625594A2 (en) * | 1993-05-21 | 1994-11-23 | General Electric Company | Solid state process for the conversion of a polycrystallic ceramic material to a single crystal, particulary sapphir |
US5451553A (en) * | 1993-09-24 | 1995-09-19 | General Electric Company | Solid state thermal conversion of polycrystalline alumina to sapphire |
US5487353A (en) * | 1994-02-14 | 1996-01-30 | General Electric Company | Conversion of doped polycrystalline material to single crystal |
-
1986
- 1986-05-27 JP JP12182686A patent/JPS62278198A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0625594A2 (en) * | 1993-05-21 | 1994-11-23 | General Electric Company | Solid state process for the conversion of a polycrystallic ceramic material to a single crystal, particulary sapphir |
US5427051A (en) * | 1993-05-21 | 1995-06-27 | General Electric Company | Solid state formation of sapphire using a localized energy source |
US5451553A (en) * | 1993-09-24 | 1995-09-19 | General Electric Company | Solid state thermal conversion of polycrystalline alumina to sapphire |
US5487353A (en) * | 1994-02-14 | 1996-01-30 | General Electric Company | Conversion of doped polycrystalline material to single crystal |
US5588992A (en) * | 1994-02-14 | 1996-12-31 | General Electric Company | Conversion of doped polycrystalline material to single crystal material |
US5683949A (en) * | 1994-02-14 | 1997-11-04 | General Electric Company | Conversion of doped polycrystalline material to single crystal material |
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