JPS62277234A - Electrostatic chuck device - Google Patents
Electrostatic chuck deviceInfo
- Publication number
- JPS62277234A JPS62277234A JP11752786A JP11752786A JPS62277234A JP S62277234 A JPS62277234 A JP S62277234A JP 11752786 A JP11752786 A JP 11752786A JP 11752786 A JP11752786 A JP 11752786A JP S62277234 A JPS62277234 A JP S62277234A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- electrostatic chuck
- chuck device
- support table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 238000001179 sorption measurement Methods 0.000 claims description 18
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 239000002826 coolant Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 abstract description 8
- 238000007667 floating Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract 3
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 22
- 238000005530 etching Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007651 thermal printing Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Jigs For Machine Tools (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
［産業上の利用分野］
本発明は静電チャック装置に関し、特に半導体製造用の
ドライプロセス装置におけるウェハの保持を静電吸着電
極によって行なう静電チャック装置に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an electrostatic chuck device, and in particular to an electrostatic chuck device that holds a wafer using an electrostatic chuck electrode in a dry process device for semiconductor manufacturing. This invention relates to an electric chuck device.
［従来の技術］
半導体製造装置における一従来の静電チャック装置は、
第５図に示すようにセラミック等に絶縁物基板３の表面
に、ＡｇまたはＰｄ等のメタライズパターン層の熱印刷
等による静電吸着電極２を形成し、その上を数十〜数百
μｍの厚さのセラミック溶射膜１で被って表面研摩によ
り平面精度を出したもの、あるいは第６図に示すように
ステンレス等の金属板６上にポリイミド樹脂などの絶縁
層７を施してその表面側に静電吸着電極２を形成し、さ
らに表面にポリイミド絶縁膜５を施して同様に平面精度
を出したものなどが用いられており、これらを図示しな
いＸＹステージ上などに取り付け、基板内に埋込まれた
通電ブツシュとしてのスルーホール電極４を介して電極
２への通電を行なうようにしている。[Prior Art] One conventional electrostatic chuck device in semiconductor manufacturing equipment is
As shown in FIG. 5, an electrostatic adsorption electrode 2 is formed on the surface of an insulating substrate 3 made of ceramic or the like by thermal printing of a metallized pattern layer of Ag or Pd, etc. It can be coated with a thick ceramic sprayed film 1 and polished to achieve flatness, or as shown in FIG. Electrostatic adsorption electrodes 2 are formed and a polyimide insulating film 5 is applied on the surface to achieve similar flatness accuracy.These are mounted on an XY stage (not shown) and embedded in a substrate. Electricity is supplied to the electrode 2 through a through-hole electrode 4 which serves as a current-carrying bush.
このような静電チャック装置では、電極２の上部にウェ
ハを載せて電極間に数百ｖ〜数ＫＶの電圧を印加すると
、絶縁膜１または５の誘電率をε、同じく絶縁膜厚さを
ｌ、電極２の面積をＡ、印加電圧をＶとすれば、ウェハ
に対してＦ＝（εＡ／Ｂｌｊ−２）Ｖ２
なる静電吸着力が働く。In such an electrostatic chuck device, when a wafer is placed on top of the electrode 2 and a voltage of several hundred volts to several kilovolts is applied between the electrodes, the dielectric constant of the insulating film 1 or 5 changes to ε, and the thickness of the insulating film changes to ε. 1, the area of the electrode 2 is A, and the applied voltage is V, then an electrostatic attraction force of F=(εA/Blj-2)V2 acts on the wafer.
また特に従来より反応性イオンビームエツチング装置（
ＲＩＢＥ）に使用されている静電チャック装置としては
第７図に概略を示すようなウェハホルダがある。In particular, reactive ion beam etching equipment (
As an electrostatic chuck device used in RIBE, there is a wafer holder as schematically shown in FIG.
このウェハホルダでは、下面中央にボス部１６を有する
釉一体形の回転支持テーブル８の上面に絶縁層１７を介
して静電吸着電極１８を形成し、その表面をさらに絶縁
膜１９で被って平面精度を出したテーブル一体形のウェ
ハホルダとなっている。支持テーブル８にはその内部に
イオンビームによる温度上昇を抑えるための冷却媒体流
通路９が形成され、ボス部１６を介して本体１０側の冷
却媒体供給源へ連通されている。電８ｉ１８への通電も
ボス部１６内を介してスリップリング１１から行なわれ
、ボス部１６がギア１２を介してモータ１３により駆動
されることによるテーブル８の回転中も、スリップリン
グ１１によって電極１８への通電が保たれるようになっ
ている。本体ｌＯは図示しないアクチュエータによって
図において左右に可動であり、これによってウェハホル
ダがエツチング装置のロードロック室とエツチング室と
の間を往復し、ロードロック室内にて大気圧下でのクエ
への着脱が行なわれ、エツチング室ではシールパツキン
１５を有する蓋１４による密閉を果して真空下でのエツ
チング処理が行なわれれるようになっている。In this wafer holder, an electrostatic adsorption electrode 18 is formed on the upper surface of an integrally glazed rotary support table 8 having a boss portion 16 at the center of the lower surface via an insulating layer 17, and the surface is further covered with an insulating film 19 to ensure flatness. It is a wafer holder with an integrated table. A cooling medium flow path 9 is formed inside the support table 8 to suppress a temperature rise due to the ion beam, and is communicated via a boss portion 16 to a cooling medium supply source on the main body 10 side. Electricity is supplied to the electrode 8i18 from the slip ring 11 through the inside of the boss portion 16, and even while the table 8 is rotating due to the boss portion 16 being driven by the motor 13 via the gear 12, the slip ring 11 supplies electricity to the electrode 18. electricity is maintained. The main body 1O is movable left and right in the figure by an actuator (not shown), whereby the wafer holder is reciprocated between the load lock chamber and the etching chamber of the etching apparatus, and can be attached to and detached from the wafer under atmospheric pressure in the load lock chamber. The etching chamber is sealed with a lid 14 having a seal packing 15, and the etching process is performed under vacuum.
ところで、従来の静電チャック装置では、電極への印加
電圧を取り去っても絶縁物の残留電荷等によりウェハの
離脱がすぐには行なわれず、特に減圧ないし真空条件下
ではこの離脱が長時間経過しないと行なわれず、処理サ
イクルタイムの短縮化を妨げていた。これを改善する一
手法として、ウェハ交換時に電極電位を逆にするなどの
電気的な方法が考えられているが、常に安定した離脱時
間を得るまでには至っておらず、離脱時間の短縮の面で
もあまり効果を上げていないのが実情である。By the way, in conventional electrostatic chuck devices, even if the voltage applied to the electrodes is removed, the wafer does not detach immediately due to residual charges in the insulator, and especially under reduced pressure or vacuum conditions, the wafer does not detach for a long time. This has hindered shortening of processing cycle time. Electrical methods, such as reversing the electrode potential when exchanging wafers, have been considered as a way to improve this, but it has not yet been possible to always obtain a stable detachment time, and it is difficult to reduce the detachment time. However, the reality is that it is not very effective.
また従来の特にエツチング装置に用いられていた回転支
持テーブルによるウェハホルダでは、テーブルと静電チ
ャックとが一体構造で分離不能なため、吸着面の損傷と
いったときにテーブルを軸受から外して全体を交換しな
ければならず、取外しと取付けに軸受の調整を含めて長
時間を要し、電極交換作業が困難になる欠点もある。In addition, in conventional wafer holders using rotary support tables, especially those used in etching equipment, the table and electrostatic chuck are integrated and cannot be separated, so if the suction surface is damaged, the table must be removed from the bearing and the entire table replaced. This also has the disadvantage that removal and installation, including bearing adjustment, take a long time, making electrode replacement difficult.
［発明が解決しようとする問題点］
本発明の課題は、前述の従来技術の欠点を除去して、ウ
ェハ等の被吸着物を離脱させようとするときに吸着面か
らの被吸着物の離脱が直ちに可能となるように残留吸着
力に対向する強制離脱力を被吸着物に作用させることが
でき、しかも吸着面損傷時などの電極交換を容易にする
こともできる静電チャック装置を提供することにある。[Problems to be Solved by the Invention] An object of the present invention is to eliminate the drawbacks of the prior art described above, and to solve the problem of detachment of an object to be attracted, such as a wafer, from the attraction surface. To provide an electrostatic chuck device which can apply a forced separation force opposite to the residual adsorption force to an object to be adsorbed so as to make it possible to do so immediately, and which can also facilitate electrode replacement when the adsorption surface is damaged. There is a particular thing.
本発明の別の課題は、強制離脱力の付与を被吸着物に損
傷を与えることなく行なうようにした前記静電チャック
装置を提供することにある。Another object of the present invention is to provide the electrostatic chuck device described above, which can apply a forced separation force without damaging an object to be attracted.
［問題点を解決するための手段］
前述の課題を達成するために、本発明の静電チャック装
置においては、静電吸着基板として、被吸着物を離脱さ
せるために被吸着物と吸着面間に加圧気体を噴出する気
体放出手段を有する基板を備えている。この基板は支持
テーブルに着脱可能に固定され、加圧気体の供給は好ま
しくはこの支持テーブル内を介して行なわれる。[Means for Solving the Problems] In order to achieve the above-mentioned problems, in the electrostatic chuck device of the present invention, as an electrostatic chuck substrate, there is provided an electrostatic chuck that connects the chuck between the chucked object and the chuck surface in order to detach the chucked object. The substrate is equipped with a gas emitting means for ejecting pressurized gas. The substrate is removably fixed to a support table, and the pressurized gas is preferably supplied through the support table.
前記支持テーブルは、ひとつの実施態様においては下面
中央のボス部で枢支された回転支持テーブルであり、こ
の他にも非回転の例えばＸＹステージの一部であっても
よいことは述べるまでもない。In one embodiment, the support table is a rotary support table pivotally supported by a boss at the center of the lower surface, and it goes without saying that it may also be a part of a non-rotating XY stage, for example. do not have.
また前記基板は、ひとつの実施態様によれば内部に冷却
媒体流通路を含むセラミック一体成形品であり、別の実
施態様によればステンレス等の金属板からなり、この場
合はこの金属板の裏面と接する前記支持テーブルの上面
部に冷却媒体流通路が設けられる。According to one embodiment, the substrate is a ceramic integrally molded product including a cooling medium flow path inside, and in another embodiment, it is made of a metal plate such as stainless steel, and in this case, the back side of the metal plate A cooling medium flow path is provided on the upper surface of the support table that is in contact with the support table.
基板と支持テーブルとの固定は着脱可能なように取付ネ
ジで行なってもよく、この場合、着脱を容易にするには
、一般的には取付ネジを基板の表面側から支持テーブル
にねじ込むのがよい。The board and the support table may be fixed in a removable manner using mounting screws. In this case, in order to facilitate the mounting and removal, it is generally recommended to screw the mounting screws into the support table from the front side of the board. good.
被吸着物の強制離脱用の気体としてはプロセスおよび装
置に影響を及ぼさないものがよく、大気中なら空気やＮ
２ガス、処理室内であるならその処理に使うガスを強制
離脱用の気体として供給する。The gas for forced removal of the adsorbed material should preferably be one that does not affect the process or equipment, and if it is in the atmosphere, air or N
2 gas, if it is inside the processing chamber, the gas used for the processing is supplied as the gas for forced removal.
［作用］
本発明の静電チャック装置では、吸着用基板の表面に被
吸着物の強制離脱用の気体放出孔があるので、電極への
通電を断って、あるいはざらに逆極性の電圧を印加して
、残留吸着力が存在する期間内であっても、気体放出孔
から吸着面間に気体を噴出することでこの残留吸着力に
打ち勝つ浮上刃を被吸着物に与えることができ、この操
作は気体の加圧供給を電磁弁等により制御する一般的な
方式で容易に実現可能であって、遅れのない迅速な気体
噴出による浮上刃の付与を被吸着物に非接触で行なえる
ものである。[Function] In the electrostatic chuck device of the present invention, since there is a gas release hole on the surface of the adsorption substrate for forced removal of the adsorbed object, it is possible to cut off the electricity to the electrode or roughly apply a voltage of opposite polarity. Even during the period when residual adsorption force exists, by ejecting gas between the adsorption surfaces from the gas discharge hole, it is possible to provide the object with a floating blade that can overcome this residual adsorption force, and this operation This can be easily realized using a general method in which the pressurized supply of gas is controlled by a solenoid valve, etc., and a floating blade can be applied without contacting the object to be adsorbed by quickly blowing out gas without delay. be.
また本発明の静電チャック装置では、前述の特徴を備え
た基板を支持テーブルに着脱可能に固定する方式である
ので、吸着面損傷に際しては基板のみを支持テーブルか
ら外して交換することが可能である。Furthermore, in the electrostatic chuck device of the present invention, the substrate having the above-mentioned features is removably fixed to the support table, so if the suction surface is damaged, it is possible to remove only the substrate from the support table and replace it. be.
次に本発明の好適は実施例を図面と共に説明すれば以下
の通りである。Next, preferred embodiments of the present invention will be described below with reference to the drawings.
［実施例］
第１図および第２図は、前述の第７図に示したＲＩＢＥ
用のウェハホルダに使用可能な回転支持テーブル形の静
電チャック装置に本発明を適用した場合の実施例を示す
縦断面図と平面図で、下面中央にボス部２６を一体に有
するステンレス製回転支持テーブル２４の上面にはＡＪ
１２０３などのセラミック基板２０が下面側から取付ネ
ジ２５によって固定されて、いる。この基板２０はその
内部に冷却水路２９を有すると共に、その上面に一対の
半月形の静電吸着電極２８がメタライズ層によって形成
されており、さらに表面にはセラミック溶射層などの絶
縁膜２１が所定の平面精度で被着されている。基板２０
の表面には、電極周辺部に気体放出孔２２ａが開孔して
おり、基板内を貫通して支持テーブル２４内の通路２２
ｂと連通され、図示しない本体側軸受部を介して加圧気
体供給源に通じている。また基板２０の下面部には各電
極２８に電気的に接続されたスルーホール電極２７ａが
通電ブツシュとして設けられており、これには支持テー
ブル２４側の通電端子２７ｂが挿込まれている。基板２
０内の冷却水路２９は第７図の場合と同様にボス部２６
を介して外部給水源と接続されており、ボス部２６の直
上部で支持テーブル側の通路と接続するために、第２図
に示すように基板２０の冷却水路２９の出入口２３は、
スルーホール電極２７ａと同様にそのほぼ中央部に集中
配置されている。なお、第１図で４０は吸着されたウェ
ハを示す。また支持テーブル２４と基板２０との合わせ
面間には、気体通路や冷却水通路および通電ブツシュ間
を相互からシールするために複数の０リングが同心状に
介装されている。[Example] Figures 1 and 2 show the RIBE shown in Figure 7 above.
These are longitudinal cross-sectional views and plan views showing an embodiment of the present invention applied to a rotating support table type electrostatic chuck device that can be used in a wafer holder made of stainless steel and having a boss portion 26 integrally at the center of the lower surface. AJ on the top surface of table 24
A ceramic substrate 20 such as 1203 is fixed from the bottom side with mounting screws 25. This substrate 20 has a cooling channel 29 inside thereof, and has a pair of half-moon-shaped electrostatic adsorption electrodes 28 formed of a metallized layer on its upper surface, and further has an insulating film 21 such as a ceramic sprayed layer on its surface in a predetermined manner. It is deposited with a flatness accuracy of . Substrate 20
A gas release hole 22a is formed on the surface of the electrode around the electrode, and a gas release hole 22a is formed on the surface of the support table 24, passing through the substrate.
b, and communicates with a pressurized gas supply source via a main body side bearing portion (not shown). Further, on the lower surface of the substrate 20, a through-hole electrode 27a electrically connected to each electrode 28 is provided as a current-carrying bush, into which a current-carrying terminal 27b on the support table 24 side is inserted. Board 2
The cooling water channel 29 in 0 is connected to the boss part 26 as in the case of FIG.
As shown in FIG. 2, the inlet/outlet 23 of the cooling water channel 29 of the board 20 is connected to an external water supply source via the
Similar to the through-hole electrode 27a, the electrodes are concentrated at approximately the center thereof. In addition, in FIG. 1, 40 indicates a wafer that has been sucked. Further, a plurality of O-rings are interposed concentrically between the mating surfaces of the support table 24 and the substrate 20 in order to seal the gas passage, the cooling water passage, and the current-carrying bushings from each other.
さてウェハ離脱に際しては図示しない本体側から気体を
供給して通路２２ｂを介して放出孔２２ａから加圧気体
を噴出させると、吸着しているウェハ４０の吸着面の間
にこの気体による浮上刃が作用し、ウェハが残留吸着力
に打勝って離脱されることになる。この場合、反応チャ
ンバ内でウェハをはがすときは、その反応チャンバ内で
使用している反応ガスを離脱用気体として給気し、ウニ
ハホルダがロードロック室等の大気中にあるときにウェ
ハをはがす場合には離脱用ガスとして空気やＮ２ガス等
の不活性ガスを離脱用気体に用いるものとすればよい。Now, when the wafer is detached, when gas is supplied from the main body side (not shown) and pressurized gas is ejected from the discharge hole 22a through the passage 22b, a floating blade is created by this gas between the suction surfaces of the wafer 40 being adsorbed. As a result, the wafer overcomes the residual attraction force and is detached. In this case, when peeling the wafer in the reaction chamber, the reaction gas used in the reaction chamber is supplied as a separation gas, and when the wafer is peeled off while the unifer holder is in the atmosphere such as a load lock chamber. In this case, an inert gas such as air or N2 gas may be used as the desorption gas.
第３図は本発明のもうひとつの実施例を示しており、ス
テンレス製の回転支持テーブル３４の上面には冷却水路
３９が掘られており、その上にステンレス基板３０が表
面側から取付ネジ３５によって固定されている。基板３
Ｇにはその表面にセラミック溶射等による絶縁層３１を
介して前述と同様の半月形の一対の静電吸着電ｆ！３８
が形成され、その上にセラミック溶射等による絶縁膜３
３が平らに形成されている。このステンレス基板にもそ
の表面に開孔する気体放出孔３２ａが設けられており、
テーブル３４側の給気通路３２ｂと連通されている。ま
た基板３０のほぼ中央部において通電ブツシュ３７が配
設されているのは前述の例と同様である。FIG. 3 shows another embodiment of the present invention, in which a cooling water channel 39 is dug in the upper surface of a rotary support table 34 made of stainless steel, and a stainless steel substrate 30 is placed on top of the cooling water channel 39 from the surface side with mounting screws 35. Fixed by Board 3
G has a pair of half-moon-shaped electrostatic adsorption charges f! 38
is formed, and an insulating film 3 is formed thereon by ceramic spraying or the like.
3 is formed flat. This stainless steel substrate is also provided with gas release holes 32a opened on its surface.
It communicates with the air supply passage 32b on the table 34 side. Further, the current-carrying bush 37 is disposed approximately in the center of the board 30, as in the previous example.
この実施例では、取付ネジ３５を基板３００表面側から
ねじ込むようにしであるので、基板の取り外し取り付け
がウエハホｉシダの上面側から行え、その作業が容易に
なる利点をもっている。In this embodiment, since the mounting screws 35 are screwed in from the surface side of the substrate 300, it is possible to remove and attach the substrate from the upper surface side of the wafer hoist, which has the advantage of making the work easier.
第４図は前述第１図または第３図の例における冷却水路
２９または３９の配置パターンの一例を示しており、は
ぼ中央部に出入口を有する種々のパターンを用いること
ができる。FIG. 4 shows an example of the arrangement pattern of the cooling water channels 29 or 39 in the example of FIG. 1 or FIG. 3, and various patterns having entrances and exits in the center portions can be used.
なお、本発明は、半導体製造装置、特にドライプロセス
装置におけるウェハ静電チャック装置に用いるのに好適
であるが、その他の工作機械等におけるワーク固定用の
静電チャックにも勿論応用可能である。Although the present invention is suitable for use in a wafer electrostatic chuck device in semiconductor manufacturing equipment, particularly dry process equipment, it is of course applicable to electrostatic chucks for fixing workpieces in other machine tools and the like.
［発明の効果コ
以上に述べたように、本発明の静電チャック装置では、
静電吸着面にガスを噴出させる構造をもっているので、
被吸着物を離脱させる際に残留電荷によって離脱が困難
となることがなく、迅速な離脱が可能であり、またそれ
に加えて吸着面の損傷等に対しても基板だけをテーブル
から取り外して交換することができるので作業が容易で
短時間のうちに終了できる利点がある。[Effects of the Invention As stated above, the electrostatic chuck device of the present invention has the following effects:
It has a structure that ejects gas onto the electrostatic adsorption surface, so
When detaching an object to be attracted, it is not difficult to detach due to residual charge, and it can be quickly detached.In addition, in case of damage to the attracting surface, only the substrate can be removed from the table and replaced. This has the advantage that the work is easy and can be completed in a short time.
第１図は本発明の一実施例を示す要部の縦断面図、第２
図はその平面図、第３図は本発明のもうひとつの実施例
を示す要部の縦断面図、′ｓ４図は冷却水路の配置パタ
ーンの一例を示す平面図、第５図および第６図は従来の
静電吸着基板の例を示す断面図、第７図は従来の反応性
イオンビームエツチング装置用の静電吸着式ウニ八ホル
ダの例を示す縦断面図である。
２０：セラミック基板、
２１：絶縁膜、
２２ａ：気体放出孔、
２３：冷却水出入口、
２４；回転支持テーブル、
２５：取付ネジ、
２６：ボス部、
２７ａニスルーホール電極（通電ブツシュ）、２８、静
電吸着電極、
２９：冷却水路、
３０；ステンレス基板、
３２ａ：気体放出孔、
３４：回転支持テーブル、
３５：取付ネジ、
３６：ボス部、
３７；通電ブツシュ、
３８；静電吸着電極。Fig. 1 is a vertical sectional view of the main part showing one embodiment of the present invention, Fig.
The figure is a plan view, FIG. 3 is a vertical sectional view of the main part showing another embodiment of the present invention, FIG. 4 is a plan view showing an example of the arrangement pattern of cooling channels, and FIGS. 7 is a cross-sectional view showing an example of a conventional electrostatic adsorption substrate, and FIG. 7 is a vertical cross-sectional view showing an example of a conventional electrostatic adsorption type urchin holder for a reactive ion beam etching apparatus. 20: Ceramic substrate, 21: Insulating film, 22a: Gas release hole, 23: Cooling water inlet/outlet, 24; Rotating support table, 25: Mounting screw, 26: Boss portion, 27a Varnish through hole electrode (current carrying bush), 28, Electrostatic adsorption electrode, 29: Cooling channel, 30: Stainless steel substrate, 32a: Gas discharge hole, 34: Rotating support table, 35: Mounting screw, 36: Boss portion, 37: Current-carrying bush, 38: Electrostatic adsorption electrode.
Claims (1)
加圧気体を噴出する気体放出手段を有する静電吸着基板
を備えたことを特徴とする静電チャック装置。 ２、基板が支持テーブルに着脱可能に固定されているこ
とを特徴とする特許請求の範囲第１項に記載の静電チャ
ック装置。 ３、支持テーブルが、下面中央のボス部で枢支された回
転支持テーブルであることを特徴とする特許請求の範囲
第２項に記載の静電チャック装置。 ４、基板が内部に冷却媒体流通路を含むセラミック一体
成形品からなることを特徴とする特許請求の範囲第１項
に記載の静電チャック装置。 ５、基板がステンレス等の金属板からなることを特徴と
する特許請求の範囲第１項に記載の静電チャック装置。 ６、基板を取付ネジによって支持テーブルに固定したこ
とを特徴とする特許請求の範囲第２項に記載の静電チャ
ック装置。 ７、取付ネジを基板の表面側から支持テーブルにねじ込
んだことを特徴とする特許請求の範囲第６項に記載の静
電チャック装置。 ８、被吸着物に対する処理用ガスを強制離脱用ガスとし
て気体放出口から噴出させるようにしたことを特徴とす
る特許請求の範囲第１項に記載の静電チャック装置。[Claims] 1. An electrostatic chuck characterized by comprising an electrostatic adsorption substrate having a gas discharge means for ejecting pressurized gas between an object to be adsorbed and an adsorption surface in order to separate the object to be adsorbed. Device. 2. The electrostatic chuck device according to claim 1, wherein the substrate is removably fixed to the support table. 3. The electrostatic chuck device according to claim 2, wherein the support table is a rotary support table pivotally supported by a boss portion at the center of the lower surface. 4. The electrostatic chuck device according to claim 1, wherein the substrate is made of an integrally molded ceramic product including a cooling medium flow path therein. 5. The electrostatic chuck device according to claim 1, wherein the substrate is made of a metal plate such as stainless steel. 6. The electrostatic chuck device according to claim 2, wherein the substrate is fixed to the support table with a mounting screw. 7. The electrostatic chuck device according to claim 6, wherein the mounting screw is screwed into the support table from the surface side of the substrate. 8. The electrostatic chuck device according to claim 1, wherein the processing gas for the adsorbed object is ejected from the gas outlet as a forced separation gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11752786A JPS62277234A (en) | 1986-05-23 | 1986-05-23 | Electrostatic chuck device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11752786A JPS62277234A (en) | 1986-05-23 | 1986-05-23 | Electrostatic chuck device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62277234A true JPS62277234A (en) | 1987-12-02 |
Family
ID=14713994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11752786A Pending JPS62277234A (en) | 1986-05-23 | 1986-05-23 | Electrostatic chuck device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62277234A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01227453A (en) * | 1988-03-08 | 1989-09-11 | Fujitsu Ltd | Transfer tool for wafer |
| JPH0267745A (en) * | 1988-09-02 | 1990-03-07 | Canon Inc | Wafer holding apparatus |
| JPH0297035A (en) * | 1988-05-24 | 1990-04-09 | Balzers Ag | Vacuum apparatus |
| JPH03108737A (en) * | 1989-05-24 | 1991-05-08 | Toto Ltd | Electrostatic chuck having refrigerant flow path and manufacture thereof |
| JPH04100255A (en) * | 1990-08-18 | 1992-04-02 | Fujitsu Ltd | Semiconductor manufacturing device |
| JP2007043170A (en) * | 2005-08-02 | 2007-02-15 | Applied Materials Inc | Heating and cooling of substrate support |
| US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
-
1986
- 1986-05-23 JP JP11752786A patent/JPS62277234A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01227453A (en) * | 1988-03-08 | 1989-09-11 | Fujitsu Ltd | Transfer tool for wafer |
| JPH0297035A (en) * | 1988-05-24 | 1990-04-09 | Balzers Ag | Vacuum apparatus |
| JPH0267745A (en) * | 1988-09-02 | 1990-03-07 | Canon Inc | Wafer holding apparatus |
| JPH03108737A (en) * | 1989-05-24 | 1991-05-08 | Toto Ltd | Electrostatic chuck having refrigerant flow path and manufacture thereof |
| JPH04100255A (en) * | 1990-08-18 | 1992-04-02 | Fujitsu Ltd | Semiconductor manufacturing device |
| JP2007043170A (en) * | 2005-08-02 | 2007-02-15 | Applied Materials Inc | Heating and cooling of substrate support |
| US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
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