JPS622712B2 - - Google Patents
Info
- Publication number
- JPS622712B2 JPS622712B2 JP56137331A JP13733181A JPS622712B2 JP S622712 B2 JPS622712 B2 JP S622712B2 JP 56137331 A JP56137331 A JP 56137331A JP 13733181 A JP13733181 A JP 13733181A JP S622712 B2 JPS622712 B2 JP S622712B2
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- layer
- substrate
- solar cell
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000006059 cover glass Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 9
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002431 hydrogen Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
【発明の詳細な説明】
この発明は、光エネルギーを電気エネルギーに
交換する太陽電池の製造方法に係り、特にその機
械的強度を保持しつつ、軽量化を計るための製造
方法の効良に関するものである。[Detailed Description of the Invention] The present invention relates to a method for manufacturing a solar cell that exchanges light energy into electrical energy, and particularly relates to the effectiveness of the manufacturing method for reducing weight while maintaining mechanical strength. It is.
近年、人工衛星などの宇宙空間用機器の電源と
して太陽電池が広く用いられつつあり、現在主と
してシリコン太陽電池が広く用いられている。し
かし、このような用途に対しては限られた容積
で、より多くの電力を得るために、高い変換効率
をもつた太陽電池が要望され、さらに、宇宙空間
においては放射線が降りそそいでいるので、放射
線による特性の劣化のないことが要求される。こ
のような要求に対して、現在最も高い変換効率を
有し、耐放射線性にも優れているヒ化ガリウム
（GaAs）太陽電池が注目されている。 In recent years, solar cells have been widely used as a power source for space equipment such as artificial satellites, and silicon solar cells are currently widely used. However, for such applications, solar cells with high conversion efficiency are required in order to obtain more power in a limited volume, and furthermore, since radiation is pouring down in outer space, , it is required that there is no deterioration of characteristics due to radiation. In response to these demands, gallium arsenide (GaAs) solar cells, which currently have the highest conversion efficiency and excellent radiation resistance, are attracting attention.
第１図は従来のGaAs太陽電池の一例を示す平
面図、第２図は第１図の―線での断面図であ
る。この従来のGaAs太陽電池は、250〜300μｍ
の厚さをもつｎ形のGaAs基板１の上にｐ形GaAs
層２を形成して、両者間にpn接合３が形成され
ており、さらに、ｐ形GaAs層２の上にｐ形アル
ミニウム・ガリウム・ヒ素（AlGaAs）層４が形
成されている。そして、ｎ側電極５はｎ形GaAs
基板１の裏面に形成され、ｐ側電極６はｐ形
AlGaAs層４の表面に、同表面への光入射をあま
り妨げないように部分的に（この例では第１図に
示すように櫛状に）形成されている。ｐ形
AlGaAs層４の表面の上記ｐ側電極６が形成され
ていない部分には反射防止膜７が形成されてい
る。さらに、太陽光に対して透明な板、例えば、
100〜250μｍの厚さをもつ溶融シリカまたはセリ
ウームをドープしたマイクロシートのカバーガラ
ス８が透明シリコーン樹脂９によつてｐ側電極６
および反射防止膜７の上に接着されている。 FIG. 1 is a plan view showing an example of a conventional GaAs solar cell, and FIG. 2 is a sectional view taken along the line - in FIG. This conventional GaAs solar cell is 250-300 μm
A p-type GaAs substrate 1 is placed on an n-type GaAs substrate 1 with a thickness of
A p-n junction 3 is formed therebetween, and a p-type aluminum gallium arsenide (AlGaAs) layer 4 is formed on the p-type GaAs layer 2 . And the n-side electrode 5 is n-type GaAs
Formed on the back surface of the substrate 1, the p-side electrode 6 is a p-type
They are formed partially on the surface of the AlGaAs layer 4 (in this example, in a comb shape as shown in FIG. 1) so as not to significantly impede the incidence of light onto the surface. p-type
An antireflection film 7 is formed on a portion of the surface of the AlGaAs layer 4 where the p-side electrode 6 is not formed. Additionally, plates transparent to sunlight, e.g.
A cover glass 8 made of a microsheet doped with fused silica or cerium and having a thickness of 100 to 250 μm is attached to the p-side electrode 6 by a transparent silicone resin 9.
and is adhered onto the antireflection film 7.
このような構造のGaAs太陽電池１１において
は、光電流発生に有効な光キヤリヤは主としてｐ
形GaAs層２内で発生する。ｐ形GaAs層２の上に
はｐ形AlGaAs層４が設けられているので、発生
した光キヤリヤのｐ形GaAs層２表面での再結合
による損失をかなり防ぐことができ、高効率の太
陽電池が実現されている。さらに、空乏層領域、
およびｎ形GaAs基板１内のpn接合３からホール
の拡散長さ程度までの領域内で発生した光キヤリ
ヤも光電流発生に寄与する。これより奥深いｎ形
GaAs基板１内で発生する光キヤリヤは非常にわ
ずかであり、かつ、pn接合３に到達しないの
で、光電流発生には寄与しない。なお、ｐ形
AlGaAs層４内で発生する光キヤリヤは、表面再
結合するので光電流発生には寄与できない。従つ
て、この層４での光の吸収はできるだけ少なくす
ることが望ましく、この層４の厚さは１μｍ以下
というように薄くされている。通常ｐ形GaAs層
２の厚さは数μｍ以下、空乏層の厚さは１μｍ以
下、ｎ形GaAs基板１中のホールの拡散長さは数
μｍ以下であり、有効な受光領域はｐ形AlGaAs
層４とｐ形GaAs層２との界面から10μｍ程度、
深くても20μｍ以下という極めて薄い厚さであ
る。従つて、表面から10〜20μｍ以上離れた所で
生じる放射線損傷は変換効率には影響せず、表面
から200〜300μｍの有効受光領域を有するシリコ
ン太陽電池に比して耐放射線性に優れているとい
える。 In the GaAs solar cell 11 having such a structure, the optical carrier effective for photocurrent generation is mainly p.
This occurs within the GaAs layer 2. Since the p-type AlGaAs layer 4 is provided on the p-type GaAs layer 2, loss due to recombination of generated optical carriers on the surface of the p-type GaAs layer 2 can be significantly prevented, resulting in a highly efficient solar cell. has been realized. Furthermore, the depletion layer region,
In addition, optical carriers generated within the region from the pn junction 3 to the hole diffusion length within the n-type GaAs substrate 1 also contribute to photocurrent generation. Deeper n-type than this
The optical carriers generated within the GaAs substrate 1 are very small and do not reach the pn junction 3, so they do not contribute to photocurrent generation. In addition, p-type
Optical carriers generated within the AlGaAs layer 4 recombine on the surface and cannot contribute to photocurrent generation. Therefore, it is desirable to minimize light absorption in this layer 4, and the thickness of this layer 4 is made as thin as 1 μm or less. Normally, the p-type GaAs layer 2 has a thickness of several μm or less, the depletion layer has a thickness of 1 μm or less, the diffusion length of holes in the n-type GaAs substrate 1 is several μm or less, and the effective light-receiving region is p-type AlGaAs.
About 10 μm from the interface between layer 4 and p-type GaAs layer 2,
It is extremely thin, less than 20 μm deep. Therefore, radiation damage that occurs at a distance of 10 to 20 μm or more from the surface does not affect the conversion efficiency, and the solar cell has superior radiation resistance compared to silicon solar cells, which have an effective light-receiving area of 200 to 300 μm from the surface. It can be said.
このように、GaAs太陽電池は宇宙空間機器用
として優れた特性を有しているが、GaAsはシリ
コンに比して比重が大きいので、同一寸法のシリ
コン太陽電池より重くなる。これは人工衛星の打
上げ時などに重大な欠点となる。一方上述のよう
にGaAs太陽電池の有効受光領域は厚さ10〜20μ
ｍの領域であるので、太陽電池の厚さはこの程度
で十分であるが、宇宙機器用太陽電池の標準寸法
である２cm×２cmの受光面の大きさで、上記厚さ
の結晶を得ることは現在の技術ではかなり困難で
あり、たとえ、得られたとしても非常に割れ易
く、電極形成等の組立て工程での取扱いが極めて
困難であり、太陽電池製作歩留りが極めて悪く、
太陽電池の価格をおし上げていた。 As described above, GaAs solar cells have excellent characteristics for use in space equipment, but because GaAs has a higher specific gravity than silicon, it is heavier than a silicon solar cell of the same size. This is a serious drawback when launching artificial satellites. On the other hand, as mentioned above, the effective light-receiving area of GaAs solar cells has a thickness of 10 to 20μ.
m region, so the thickness of the solar cell is sufficient, but it is possible to obtain a crystal with the above thickness with a light-receiving surface size of 2 cm x 2 cm, which is the standard size for solar cells for space equipment. is quite difficult with current technology, and even if it could be obtained, it would be extremely fragile, extremely difficult to handle during assembly processes such as electrode formation, and the yield of solar cell production would be extremely low.
They were pushing up the price of solar cells.
この発明は以上のような点に鑑みてなされたも
ので、ある程度の厚さの結晶基板を用いて接合、
表面側電極等の形成およびカバーガラスの接着を
完了した後に、基板の裏面をエツチングして所要
の結晶厚さにすることによつて、高効率で、耐放
射特性にすぐれ、しかも軽量で、かつ十分な機械
的強度を有する太陽電池を歩留りよく得る製作方
法を提供することを目的としている。 This invention was made in view of the above points, and uses crystal substrates of a certain thickness to bond,
After completing the formation of the front side electrodes and adhesion of the cover glass, the back side of the substrate is etched to the required crystal thickness, resulting in high efficiency, excellent radiation resistance, lightweight, and It is an object of the present invention to provide a manufacturing method for obtaining solar cells having sufficient mechanical strength with a high yield.
第３図Ａ〜Ｇはこの発明による太陽電池の製造
方法の一実施例を説明するための、その主要工程
段階における状態を示す断面図である。まず、用
意するものとしては、(i)融液槽および基板収納部
を有するカーボン製治具（図示せず）、(ii)300μｍ
程度の厚さをもつｎ形GaAs基板１（第３図Ａ）、
(iii)３元化合物半導体、例えばGaにAl、並びにAs
もしくはGaAsを含んだ融液に族元素例えば亜
鉛（Zn）を添加した結晶成長融液（図示せず）
である。 FIGS. 3A to 3G are cross-sectional views showing states at main process steps for explaining one embodiment of the method for manufacturing a solar cell according to the present invention. First, the following items must be prepared: (i) a carbon jig (not shown) having a melt tank and a substrate storage area; (ii) a 300μm
An n-type GaAs substrate 1 (Fig. 3A) with a thickness of about
(iii) Ternary compound semiconductors, such as Ga, Al, and As
Or a crystal growth melt made by adding a group element such as zinc (Zn) to a melt containing GaAs (not shown)
It is.
まず、上記カーボン製治具の融液槽に上記結晶
成長融液を入れるとともに、その基板収容部に上
記ｎ形GaAs基板１を収容する。そして、このカ
ーボン製治具を石英反応管（図示せず）内に入
れ、この石英反応管内を充分水素（H2）ガスで置
換したのち、H2ガスを流しながら所定温度まで
昇温する。温度が所定温度に安定したのち、上記
結晶成長融液をｎ形GaAs基板１に接触させた状
態で所定の温度で、この結晶成長融液からZnが
ｎ形GaAs基板１内に拡散してｐ形GaAs層２の厚
さが所定の値になるように、一定時間保持する。
次に、ｐ形AlxGa1-xAs層４の厚さが１μｍ以下
になるように、例えば0.2℃／分〜1.0℃／分の冷
却速度で所定温度降温させる。この状態を第３図
Ｂに示す。次に第３図Ｃに示すように反射防止膜
およびｐ形AlxGa1-xAs層４の保護膜として効果
をもつ、例えばシリコン窒化（Si3N4）膜７を形成
する。つづいて、写真蝕刻技術を用いて、Si3N4
膜７およびｐ形AlxGa1-xAs層４に穴あけを行な
つた後、この穴を通してｐ形GaAs層２の表面に
オーミツクコンタクトする、例えば金（Au）―
亜鉛（Zn）からなるグリツド状のｐ側電極６を
形成する。この状態を第３図Ｄに示す。次にｐ側
電極６の一部に外部リードのコネタ（図示せず）
を半田付けまたは溶接した後、太陽光に対して透
明な板、例えば、100〜250μｍの厚さをもつ溶融
シリカまたはセリウムをドープしたマイクロシー
トのカバーガラス８を透明シリコーン樹脂９で反
射防止膜７の表面に接着される。この状態を第３
図Ｅに示す。次に、第３図Ｆに示すように、この
カバーガラス８の接着されたGaAs太陽電池を例
えば、GaAsのエツチング液（HNO3：H2O：FH
＝３：２：１の混合液）に浸し、ｎ形GaAs基板
１の裏面をエツチングし、ｐ形GaAs層２とｎ形
GaAs基板１とからなる素子基体１０の厚さを50
μｍ程度にする。つづいて、第３図Ｇに示すよう
に、上記エツチングされたｎ形GaAs層１の面に
ｎ側電極５を形成してGaAs太陽電池は完成す
る。 First, the crystal growth melt is poured into the melt bath of the carbon jig, and the n-type GaAs substrate 1 is accommodated in the substrate accommodating portion thereof. Then, this carbon jig is placed in a quartz reaction tube (not shown), and after the inside of the quartz reaction tube is sufficiently replaced with hydrogen (H 2 ) gas, the temperature is raised to a predetermined temperature while flowing H 2 gas. After the temperature stabilizes at a predetermined temperature, Zn is diffused from the crystal growth melt into the n-type GaAs substrate 1 at a predetermined temperature with the crystal growth melt in contact with the n-type GaAs substrate 1, and p The thickness of the GaAs layer 2 is kept at a predetermined value for a certain period of time.
Next, the temperature is lowered to a predetermined temperature at a cooling rate of 0.2° C./min to 1.0° C./min, for example, so that the thickness of the p-type Al x Ga 1-x As layer 4 becomes 1 μm or less. This state is shown in FIG. 3B. Next, as shown in FIG. 3C, a silicon nitride (Si 3 N 4 ) film 7, for example, which is effective as an antireflection film and a protective film for the p-type Al x Ga 1-x As layer 4 is formed. Next, using photo-etching technology, Si 3 N 4
After drilling holes in the film 7 and the p-type Al x Ga 1-x As layer 4, a layer of, for example, gold (Au) is made to make ohmic contact with the surface of the p-type GaAs layer 2 through the hole.
A grid-like p-side electrode 6 made of zinc (Zn) is formed. This state is shown in FIG. 3D. Next, connect an external lead connector (not shown) to a part of the p-side electrode 6.
After soldering or welding, a plate transparent to sunlight, for example, a cover glass 8 made of fused silica or cerium-doped microsheet with a thickness of 100 to 250 μm is coated with an antireflection coating 7 using a transparent silicone resin 9. is adhered to the surface of This state is the third
Shown in Figure E. Next, as shown in FIG .
The back surface of the n-type GaAs substrate 1 is etched, and the p-type GaAs layer 2 and the n-type
The thickness of the element substrate 10 consisting of the GaAs substrate 1 is 50
The size should be about μm. Subsequently, as shown in FIG. 3G, an n-side electrode 5 is formed on the surface of the etched n-type GaAs layer 1 to complete the GaAs solar cell.
このようにして得られたGaAs太陽電池は、そ
の重量が従来のものに比較して1/5以下となり、
充に軽量化の効果がみられ、しかもカバーガラス
が接着されているので充分な機械的強度を有して
いる。 The weight of the GaAs solar cells obtained in this way is less than 1/5 of that of conventional ones.
It has a significant weight reduction effect, and since the cover glass is bonded, it has sufficient mechanical strength.
なお、上記実施例ではGaAsを用いた太陽電池
について説明したが、他の半導体を用いた太陽電
池の製造にもこの発明は適用できる。 In the above embodiments, a solar cell using GaAs was explained, but the present invention can also be applied to manufacturing a solar cell using other semiconductors.
以上、詳述したように、この発明になる太陽電
池の製造方法では、取扱い容易な程度の厚さの結
晶基板を用いて、接合、表面側電極等の形成およ
び表面側にカバーガラスを接着した後に、基板の
裏面にエツチングして所要の結晶厚さにするの
で、特性のすぐれ、軽量で、機械的強度の十分な
太陽電池を歩留りよく製造することができる。 As detailed above, in the method for manufacturing a solar cell according to the present invention, a crystal substrate having a thickness that is easy to handle is used, bonding, formation of surface side electrodes, etc., and bonding of a cover glass on the surface side are performed. Afterwards, the back surface of the substrate is etched to obtain the required crystal thickness, so solar cells with excellent characteristics, light weight, and sufficient mechanical strength can be manufactured with high yield.
第１図は従来のGaAs太陽電池の一例を示す平
面図、第２図は第１図の―線での断面図、第
３図Ａ〜Ｇはこの発明による太陽電池の製造方法
の一実施例を説明するための、その主要工程段階
における状態を示す断面図である。
図において、１はｎ形GaAs基板（第１伝導形
の半導体基板）、２はｐ形GaAs層（第２伝導形の
半導体層）、３はpn接合、５はｎ側電極（第２の
電極、６はｐ側電極（第１の電極）、８はカバー
ガラス、１０は素子基体である。なお、図中符号
は同一または相当部分を示す。
FIG. 1 is a plan view showing an example of a conventional GaAs solar cell, FIG. 2 is a sectional view taken along the line - in FIG. 1, and FIGS. FIG. 2 is a cross-sectional view showing the state at the main process stage for explaining the process. In the figure, 1 is an n-type GaAs substrate (first conductivity type semiconductor substrate), 2 is a p-type GaAs layer (second conductivity type semiconductor layer), 3 is a pn junction, and 5 is an n-side electrode (second electrode). , 6 is a p-side electrode (first electrode), 8 is a cover glass, and 10 is an element substrate.The reference numerals in the drawings indicate the same or corresponding parts.
Claims (1)
形の半導体基板の一方の主面側に第２伝導形の半
導体層を形成し上記半導体基板との間にpn接合
を構成させ、上記半導体層の表面に第１の電極の
形成などの所要の処理を施した後に当該表面上に
太陽光に対して透明なカバーガラスを被着させ、
しかる後に、上記半導体基板の他方の主面側をエ
ツチングして上記半導体基板と上記半導体層とか
らなる素子基体の厚さを所要厚さにして、当該主
面に第２の電極を形成することを特徴とする太陽
電池の製造方法。 ２ 半導体としてヒ化ガリウムを用い、半導体基
板エツチング後の素子基体の厚さを50μｍ程度に
することを特徴とする特許請求の範囲第１項記載
の太陽電池の製造方法。[Claims] 1. A semiconductor layer of a second conductivity type is formed on one main surface side of a semiconductor substrate of a first conductivity type having a thickness that is safe and easy to handle, and a p-n junction is formed between the semiconductor layer and the semiconductor substrate. After performing necessary processing such as forming a first electrode on the surface of the semiconductor layer, a cover glass transparent to sunlight is applied on the surface,
Thereafter, the other main surface side of the semiconductor substrate is etched to make the element substrate composed of the semiconductor substrate and the semiconductor layer have a required thickness, and a second electrode is formed on the main surface. A method for manufacturing a solar cell characterized by: 2. The method for manufacturing a solar cell according to claim 1, characterized in that gallium arsenide is used as the semiconductor, and the thickness of the element substrate after etching the semiconductor substrate is about 50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137331A JPS5839074A (en) | 1981-08-31 | 1981-08-31 | Manufacture of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137331A JPS5839074A (en) | 1981-08-31 | 1981-08-31 | Manufacture of solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5839074A JPS5839074A (en) | 1983-03-07 |
| JPS622712B2 true JPS622712B2 (en) | 1987-01-21 |
Family
ID=15196158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56137331A Granted JPS5839074A (en) | 1981-08-31 | 1981-08-31 | Manufacture of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839074A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6272179A (en) * | 1985-09-25 | 1987-04-02 | Sharp Corp | Manufacture of thin compound semiconductor device |
| DE3536299A1 (en) * | 1985-10-11 | 1987-04-16 | Nukem Gmbh | SOLAR CELL MADE OF SILICON |
| JPH01307277A (en) * | 1988-06-04 | 1989-12-12 | Nippon Mining Co Ltd | Manufacture of solar cell |
| US9412884B2 (en) * | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
-
1981
- 1981-08-31 JP JP56137331A patent/JPS5839074A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5839074A (en) | 1983-03-07 |
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