JPS62263234A - Amorphous thin film forming system - Google Patents
Amorphous thin film forming systemInfo
- Publication number
- JPS62263234A JPS62263234A JP61106313A JP10631386A JPS62263234A JP S62263234 A JPS62263234 A JP S62263234A JP 61106313 A JP61106313 A JP 61106313A JP 10631386 A JP10631386 A JP 10631386A JP S62263234 A JPS62263234 A JP S62263234A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- vessel
- reaction vessel
- thin film
- amorphous thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 230000005684 electric field Effects 0.000 claims abstract description 18
- 239000012495 reaction gas Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 23
- 239000002245 particle Substances 0.000 abstract description 17
- 239000007789 gas Substances 0.000 abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052786 argon Inorganic materials 0.000 abstract description 5
- 238000007599 discharging Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 argon ions Chemical class 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、太陽電池１燃料電池、薄膜半導体。[Detailed description of the invention] [Industrial application field] The present invention relates to a solar cell, a fuel cell, and a thin film semiconductor.
電子写真感光体や光センサなどの、各種電子デバイスに
使用される非晶質薄膜の製造装置に関するものである。The present invention relates to an apparatus for manufacturing amorphous thin films used in various electronic devices such as electrophotographic photoreceptors and optical sensors.
第２図には、従来よシ用いられている半導体薄膜の製造
装置を示しており、たとえば、特開昭５７−０４７７１
号公報などに記載されている公知の技術である。FIG. 2 shows a semiconductor thin film manufacturing apparatus conventionally used.
This is a well-known technique described in publications such as No.
図において、気密の反応容器０１内に放電空間を形成す
るための電極０２，０３が上下方向に設けてあり、この
電極０２，０３は高周波電源０４に電気的に接続されて
いる。上記反応容器０１の外周には、上記放電空間内の
電界方向と平行な磁界を発生させるためのコイル０５が
水平に配置されており、交流電源０６と電気的に接続さ
れている。排気孔０７は図示しない真空ポンプに連通し
ており１反応ガス導入管０８は、モノシラン（Ｓ １Ｈ
ａ） と水素ガス（Ｈ２）のポンペにそれぞれ連通して
いる。なお、０９はヒータで、基板０１０’ｉ加熱する
ものである。In the figure, electrodes 02 and 03 for forming a discharge space in an airtight reaction vessel 01 are provided in the vertical direction, and these electrodes 02 and 03 are electrically connected to a high frequency power source 04. A coil 05 for generating a magnetic field parallel to the direction of the electric field in the discharge space is horizontally arranged around the outer periphery of the reaction vessel 01, and is electrically connected to an AC power source 06. The exhaust hole 07 is connected to a vacuum pump (not shown), and the 1 reaction gas introduction pipe 08 is connected to a monosilane (S 1H
a) and a hydrogen gas (H2) pump, respectively. Note that 09 is a heater that heats the substrate 010'i.
さて、電極０３上に基板０１０を載せ１反応容器０１内
ヲＩＩＩｌｆｌＩＨｇ程度に減圧した後１ モノシラン
と水素ガスとの混合ガスを反応ガス導入管０８よシ反応
容器０１（内に供給しつつ、電極０２゜０３間に１３．
５Ｍ Ｈｚの高周波電圧を印加する。Now, after placing the substrate 010 on the electrode 03 and reducing the pressure inside the reaction vessel 01 to about III1Hg, the mixture gas of monosilane and hydrogen gas is supplied into the reaction vessel 01 (inside the reaction gas inlet pipe 08) and the electrode 13 between 02° and 03.
A high frequency voltage of 5 MHz is applied.
一方、コイル０５には、５０あるいは６０Ｈ２の商業用
交流電圧を印加し、電極０２，０３間に約１００ガウス
の磁界を発生させる。なお、基板０１０は、ヒータ０９
により３００℃程度に加熱しておく。On the other hand, a commercial AC voltage of 50 or 60 H2 is applied to the coil 05 to generate a magnetic field of about 100 Gauss between the electrodes 02 and 03. Note that the substrate 010 has a heater 09
Heat to around 300℃.
反応ガス導入管０８よシ反応容器０１内に導入されたモ
ノシラン等のガスは、電極０２，０３間の放電空間で分
解され、コイル０５により発生された変動する磁界によ
シ攪拌されつつ基板０１０の表面に付着し、非晶質薄膜
を形成する。A gas such as monosilane introduced into the reaction vessel 01 through the reaction gas inlet pipe 08 is decomposed in the discharge space between the electrodes 02 and 03, and is stirred by the fluctuating magnetic field generated by the coil 05 while being transferred to the substrate 010. It adheres to the surface of and forms an amorphous thin film.
上記した従来の装置では、２枚の電極０２゜０３間に発
生する電界の方向と平行にコイル０５で発生させた変動
磁界を印加するので、電極０２゜０３間の放電空間に存
在するシリコン等のイオンが攪拌され、基板０１０上に
比較的均一な非晶質薄膜が形成される。In the conventional device described above, since a varying magnetic field generated by the coil 05 is applied in parallel to the direction of the electric field generated between the two electrodes 02 and 03, silicon etc. existing in the discharge space between the electrodes 02 and 03 are applied. ions are stirred, and a relatively uniform amorphous thin film is formed on the substrate 010.
しかし。but.
■ 基板０１０が置かれる場所は、電極０３の上であり
、電極０２，０３間の放電空間内に位置することになる
。このため１基本的に高エネルギーをもつイオンの直撃
を受けることになる。(2) The substrate 010 is placed above the electrode 03, and is located within the discharge space between the electrodes 02 and 03. For this reason, 1. Basically, it will be directly hit by ions with high energy.
すなわち、電極０２，０３間の電界Ｅにより電荷ｑのイ
オンにはクーロン力Ｆ、＝ｑＥが働き、イオン粒子が基
板０１０ｔ−直撃して形成されつつある非晶質薄膜に損
傷を与えることになる。That is, the electric field E between the electrodes 02 and 03 causes a Coulomb force F, = qE to act on the ions with a charge q, and the ion particles directly hit the substrate 010t, damaging the amorphous thin film that is being formed. .
■ コイル０５により発生される変動磁界Ｂの方向が、
放電空間に発生した電界Ｅに平行なため、放電空間内に
あるイオン、および電子はＬａｒｍｏｒ運動により旋回
運動を引き起こされるが、その旋回運動による攪拌作用
は余り大きくなく極めて大きな電力を必要とする。■ The direction of the fluctuating magnetic field B generated by coil 05 is
Since it is parallel to the electric field E generated in the discharge space, the ions and electrons in the discharge space are caused to swirl due to Larmor motion, but the stirring effect due to the swirling motion is not very large and requires extremely large power.
■ 基板０１０が一方の電極の上に載せられるので、一
度に処理される基板０１０の大きさも限定されることに
なり、電極より面積の大きな基板０１０に非晶質薄膜を
形成することができない。(2) Since the substrate 010 is placed on one of the electrodes, the size of the substrate 010 that can be processed at one time is limited, and an amorphous thin film cannot be formed on the substrate 010, which has a larger area than the electrode.
的となる直流放電や低周波放電では大面積基板上に均一
な成膜を行うことが困難である。It is difficult to uniformly form a film on a large-area substrate using direct current discharge or low-frequency discharge, which are the main targets.
従って、高価な高周波電源がどうしても必要となる。Therefore, an expensive high frequency power source is absolutely necessary.
本発明は、グロー放電プラズマを用いて非晶質薄膜を形
成する装置であって、筒状の反応容器と、同容器内を減
圧し反応ガスを導入する手段と、上記反応容器内へ該容
器の軸芯に沿って。The present invention is an apparatus for forming an amorphous thin film using glow discharge plasma, which comprises: a cylindrical reaction vessel; a means for reducing the pressure inside the vessel and introducing a reaction gas; along the axis of.
互いに平行に相対して収納された放電用電極と。and discharge electrodes housed parallel to each other and facing each other.
同放電用電極にグロー放電用電圧を供給するキ＃填電源
と、上記容器の少なくとも一部分の壁面に沿って磁極を
交互に変えて並べられた複数個の永久磁石と、上記反応
容器の軸芯と平行な軸芯含有して該反応容器を囲繞する
コイルと。A keyed power source that supplies a glow discharge voltage to the discharge electrode, a plurality of permanent magnets arranged with alternating magnetic poles along the wall surface of at least a portion of the container, and an axial center of the reaction container. and a coil surrounding the reaction vessel and having an axis parallel to the coil.
同コイルに磁界発生用の電流全供給する交流電源と、上
記放電電界空間外で該電界と平行に非晶質薄膜形成用の
基板を支持する支持手段とを有するものである。It has an AC power source that supplies all of the current for generating a magnetic field to the coil, and support means that supports a substrate for forming an amorphous thin film outside the discharge electric field space and parallel to the electric field.
本発明の装置でも、電極間に呑井チ電圧全加えることに
よりグロー放電プラズマを発生させる訳であるが１電極
を収納する反応容器の壁に沿って永久磁石をその磁極を
交互に変えて並べたので、グロー放電プラズマは表面磁
界により反応容器内に封じ込められ、容器壁での荷電粒
子の表面再結金が防止されることになり、ラジカル粒子
の発生率が増加する。In the device of the present invention, a glow discharge plasma is generated by applying the full Noiichi voltage between the electrodes, but permanent magnets are arranged along the wall of the reaction vessel housing one electrode with their magnetic poles alternately changed. Therefore, the glow discharge plasma is confined within the reaction vessel by the surface magnetic field, preventing surface recrystallization of charged particles on the vessel wall, and increasing the generation rate of radical particles.
また、電極間の放電用電界と直交する方向にコイルによ
り磁界を印加した。従って、荷電粒子は、放電用電界よ
り与えられたクーロン力と。Further, a magnetic field was applied by a coil in a direction perpendicular to the electric field for discharge between the electrodes. Therefore, the charged particles react with the Coulomb force given by the electric field for discharge.
磁界により与えられたローレンツ力に初速を与えられた
形で電界と直交する方向にドリフトするが、電界空間を
出たところでクーロン力は弱マリローレンツカによるサ
イクロトロン運動によるＬａｒｍｏｒ軌道を描いて飛ん
でいく。The Lorentz force given by the magnetic field has an initial velocity and drifts in a direction perpendicular to the electric field, but once it leaves the electric field space, the Coulomb force flies off in a Larmor orbit due to cyclotron motion due to the weak Marlorentz force. .
一方、電気的に中性であるラジカル粒子は荷電粒子群の
軌道からそれて直進するが、荷電粒子（特にイオン）と
衝突しその進路を修正させられる。しかも、この磁界は
変動しており、ラジカル粒子は均一に飛散する。On the other hand, electrically neutral radical particles deviate from the trajectory of a group of charged particles and travel straight, but they collide with charged particles (especially ions) and are forced to correct their course. Moreover, this magnetic field is fluctuating, and the radical particles are scattered uniformly.
従って、放電電界空間外へ該電界と平行的に支持された
基板の表面には、均一な非晶質薄膜が形成されることに
なる。Therefore, a uniform amorphous thin film is formed on the surface of the substrate supported outside the discharge electric field space and parallel to the electric field.
以下１本発明を第１図に示す一実施例の装置に基づき説
明する。The present invention will be explained below based on an embodiment of the apparatus shown in FIG.
１は反応容器で、その中にグロー放電プラズの商用周波
数を用い放電抵抗１２を介して上記電極２・３に接続さ
れている。コイル５は、上記反応容器１を囲繞するもの
で、交流電源６に接続されている。７は反応ガス導入管
で１図示しないボンベに連通し、モノシランとアルゴン
の混合ガスを上記反応容器１に供給するものである。排
気孔８は、真空ポンプ９に連通しており１反応容器１内
のガスを排気するものである２、１１は永久磁石で、上
記反応容器１の外面にその隣り合うもの同士の磁極が異
なるように（市松模様のように）張り付けられている。Reference numeral 1 denotes a reaction vessel in which a commercial frequency glow discharge plasma is used and connected to the electrodes 2 and 3 via a discharge resistor 12. The coil 5 surrounds the reaction vessel 1 and is connected to an AC power source 6. Reference numeral 7 denotes a reaction gas introduction pipe which communicates with a cylinder (not shown) and supplies a mixed gas of monosilane and argon to the reaction vessel 1. The exhaust hole 8 communicates with a vacuum pump 9 and exhausts the gas in the reaction vessel 1. Reference numerals 2 and 11 are permanent magnets, and adjacent ones on the outer surface of the reaction vessel 1 have different magnetic poles. It is pasted like a checkerboard pattern.
さて１図示しない支持手段により基板１０’ｒ電極２・
３の面と直交する方向で、かつ、電極２・３が形成する
放電空間の外側に支持する。Now, 1. By supporting means (not shown), the substrate 10'r electrode 2.
3 and outside the discharge space formed by the electrodes 2 and 3.
真空ポンプ９を駆動して反応容器１内を排気した後３反
応ガス導入管７からモノシランとアルゴンの混合ガスを
供給する。上記混合ガスを反応容器１内に充満させて圧
力ｔｏ、０５ないし０．５Ｔｏｒｒ に保ち、低周波
電源４から電極２・３に電圧を印加するとグロー放電プ
ラズマが電極２・３間に発生する。このプラズマは反応
容器１の外面に取り付けた永久磁石１１により反応容器
１内に封じ込められ１反応容器１の内壁での荷電粒子の
表面再結合が防止され、プラズマ密度が増大するためラ
ジカル粒子の発生率が増加する。After evacuating the inside of the reaction vessel 1 by driving the vacuum pump 9, a mixed gas of monosilane and argon is supplied from the reaction gas introduction pipe 7. When the reaction vessel 1 is filled with the above-mentioned mixed gas and maintained at a pressure of 0.05 to 0.5 Torr, and a voltage is applied from the low frequency power source 4 to the electrodes 2 and 3, glow discharge plasma is generated between the electrodes 2 and 3. This plasma is confined within the reaction vessel 1 by a permanent magnet 11 attached to the outer surface of the reaction vessel 1, preventing surface recombination of charged particles on the inner wall of the reaction vessel 1, increasing plasma density, and generating radical particles. rate increases.
一方、コイル５にはたとえば１００Ｈｚ の交流電圧
を印加し、電極２・３間に発生する電界Ｅと直交する方
向の磁界Ｂ＝ｉ発生させる。なお。On the other hand, an AC voltage of, for example, 100 Hz is applied to the coil 5 to generate a magnetic field B=i in a direction perpendicular to the electric field E generated between the electrodes 2 and 3. In addition.
その磁界密度は１０ガウス程度で良い。The magnetic field density may be about 10 Gauss.
反応ガス導入管７から供給されたガスのうちモノシラン
ガスは、電極２・３の間に生じるグロー放電プラズマで
ラジカルＳｉ に分解され。Among the gases supplied from the reaction gas introduction pipe 7, monosilane gas is decomposed into radical Si2 by glow discharge plasma generated between the electrodes 2 and 3.
基板１０の表面に付着し薄膜を形成する。It adheres to the surface of the substrate 10 to form a thin film.
このとき、アルゴンイオン等の荷電粒子は。At this time, charged particles such as argon ions.
電極２・３間で電界Ｅによるクーロン力Ｆ、＝ｑＥとロ
ーレンツ力Ｆ２＝ｑ（Ｖｘ Ｂ ）によっていわゆるＥ
ｘＢドリフトの運動を起こす。Between electrodes 2 and 3, the so-called E is generated by the Coulomb force F, = qE due to the electric field E and the Lorentz force F2 = q (Vx B).
Causes xB drift movement.
なお、■は荷電粒子の速度である。Note that ■ is the speed of charged particles.
すなわち、ＥｘＢドリフトにより初速を与えられた形で
、電極２・３と直交する方向に飛び出し、基板１０に向
けて飛んでいく。しかし。That is, it flies out in a direction perpendicular to the electrodes 2 and 3 and flies toward the substrate 10 with an initial velocity given by the ExB drift. but.
電極２・３間に生じる電界Ｅの影響が小さい放電空間の
外側では、コイル６により生じた磁界Ｂによるサイクロ
トロン運動によりＬ ａ ｒｒｎ ｏ ｒ軌道を描いて
飛んでいく。Outside the discharge space, where the influence of the electric field E generated between the electrodes 2 and 3 is small, the cyclotron movement caused by the magnetic field B generated by the coil 6 causes the particles to fly in a L a rrn or r orbit.
従って、アルゴンイオン等の荷電粒子が基板１０を直撃
することはなくなる。Therefore, charged particles such as argon ions will not directly hit the substrate 10.
一方、電気的に中性であるラジカルＳｉは磁界Ｂの影響
を受けず、上記荷電粒子群の軌道よりそれて基板１０に
至り、その表面に非晶質薄膜を形成する。この時、ラジ
カルＳｉはＬａｒｍｏｒ軌道を飛んでゆく荷電粒子と衝
突するため、電極２・３の前方だけでなく左あるいは右
に広がった形で非晶薄膜が形成される。しかも、磁界Ｂ
ｉ変動させているので、基板１０の表面に均一に非晶質
薄膜を形成させることが可能となる。On the other hand, the electrically neutral radicals Si are not affected by the magnetic field B, deviate from the trajectory of the charged particle group, reach the substrate 10, and form an amorphous thin film on its surface. At this time, the radical Si collides with the charged particles flying in the Larmor orbit, so that an amorphous thin film is formed not only in front of the electrodes 2 and 3 but also spread to the left or right. Moreover, the magnetic field B
Since i is varied, it is possible to uniformly form an amorphous thin film on the surface of the substrate 10.
なお、電極２・３の長さは１反応容器１の長さの許す限
り長くしても何等問題がないので。Note that the lengths of the electrodes 2 and 3 can be made as long as the length of one reaction vessel 1 allows without any problem.
長尺な基板であってもその表面に均一な非晶質薄膜を形
成することが可能となる。It becomes possible to form a uniform amorphous thin film on the surface of even a long substrate.
また１図示は省略するが、基板１０を電極２・３の両側
に配置することにより、一度に２枚の大面積の非晶質薄
膜を形成することも可能であり、処理能率も向上する。Furthermore, although not shown in the drawing, by arranging the substrates 10 on both sides of the electrodes 2 and 3, it is possible to form two large-area amorphous thin films at once, and processing efficiency is also improved.
本発明によれば、太陽電池・燃料電池・電子写真感光体
などの各種ディバイスの製造において、均一な非晶質薄
膜が、しかも、大面積のものが形成されることになるの
で、産業上きわめて価値がある。According to the present invention, a uniform amorphous thin film with a large area can be formed in the production of various devices such as solar cells, fuel cells, and electrophotographic photoreceptors, which is extremely useful in industry. worth it.
第１図は本発明に係る一実施例を示す装置の横断面図、
第２図は従来装置ヲ示す鉗断面図である。
１・・・反応容器、２．３・・・電極、４・・・低周波
電源、５・・・コイル、６・・・交流電源、７・・・・
反応ガス導入管、８・・・排気孔、９・・・真空ポンプ
、１０・・・基板、１１・・・永久磁石、１２・・・放
電抵抗。FIG. 1 is a cross-sectional view of an apparatus showing one embodiment of the present invention;
FIG. 2 is a sectional view of a forceps showing a conventional device. DESCRIPTION OF SYMBOLS 1... Reaction container, 2.3... Electrode, 4... Low frequency power supply, 5... Coil, 6... AC power supply, 7...
Reaction gas introduction pipe, 8... Exhaust hole, 9... Vacuum pump, 10... Substrate, 11... Permanent magnet, 12... Discharge resistor.
Claims (1)
る手段と、上記反応容器内へ該容器の軸芯に沿って互い
に平行に相対して収納された放電用電極と、同放電用電
極にグロー放電用電圧を供給する電源と、上記容器の少
な くとも一部分の壁面に沿って磁極を交互に変えて並べら
れた複数個の永久磁石と、上記反応容器の軸芯と平行な
軸芯を有して該反応容器を囲繞するコイルと、同コイル
に磁界発生用の電流を供給する交流電源と、上記放電電
界空間外で該電界と平行に非晶質薄膜形成用の基板を支
持する支持手段とを有することを特徴とする非晶質薄膜
形成装置。[Scope of Claims] A cylindrical reaction vessel, means for reducing the pressure inside the vessel and introducing a reaction gas, and electric discharges housed in the reaction vessel parallel to each other and facing each other along the axis of the vessel. a power source for supplying glow discharge voltage to the discharge electrode; a plurality of permanent magnets arranged with alternating magnetic poles along at least a portion of the wall surface of the container; and an axis of the reaction container. a coil that surrounds the reaction vessel and has an axis parallel to the core; an AC power source that supplies a current for generating a magnetic field to the coil; and an amorphous thin film that is formed outside the discharge electric field space in parallel with the electric field. 1. An amorphous thin film forming apparatus comprising: support means for supporting a substrate for use in forming an amorphous thin film.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61106313A JPH0697657B2 (en) | 1986-05-09 | 1986-05-09 | Amorphous thin film forming equipment |
| EP87106535A EP0244842B1 (en) | 1986-05-09 | 1987-05-06 | Apparatus for forming thin film |
| DE3750349T DE3750349T2 (en) | 1986-05-09 | 1987-05-06 | Arrangement for the production of thin layers. |
| CA000536654A CA1279411C (en) | 1986-05-09 | 1987-05-08 | Method and apparatus for forming thin film |
| KR1019870004508A KR910002819B1 (en) | 1986-05-09 | 1987-05-08 | Forming method and device of amorphous thin film |
| US07/047,328 US4901669A (en) | 1986-05-09 | 1987-05-08 | Method and apparatus for forming thin film |
| KR1019900021941A KR910010168B1 (en) | 1986-05-09 | 1990-12-27 | Amorphous thin film manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61106313A JPH0697657B2 (en) | 1986-05-09 | 1986-05-09 | Amorphous thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62263234A true JPS62263234A (en) | 1987-11-16 |
| JPH0697657B2 JPH0697657B2 (en) | 1994-11-30 |
Family
ID=14430493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61106313A Expired - Fee Related JPH0697657B2 (en) | 1986-05-09 | 1986-05-09 | Amorphous thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0697657B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012172101A (en) * | 2011-02-23 | 2012-09-10 | Toppan Printing Co Ltd | Gas-barrier film, and method of manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742118A (en) * | 1980-08-27 | 1982-03-09 | Mitsubishi Electric Corp | Plasma cvd device |
| JPS59187136U (en) * | 1983-05-30 | 1984-12-12 | 三洋電機株式会社 | Semiconductor thin film forming equipment |
-
1986
- 1986-05-09 JP JP61106313A patent/JPH0697657B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742118A (en) * | 1980-08-27 | 1982-03-09 | Mitsubishi Electric Corp | Plasma cvd device |
| JPS59187136U (en) * | 1983-05-30 | 1984-12-12 | 三洋電機株式会社 | Semiconductor thin film forming equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012172101A (en) * | 2011-02-23 | 2012-09-10 | Toppan Printing Co Ltd | Gas-barrier film, and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0697657B2 (en) | 1994-11-30 |
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