JPS62262422A - Formation of tisi2 film - Google Patents
Formation of tisi2 filmInfo
- Publication number
- JPS62262422A JPS62262422A JP10594586A JP10594586A JPS62262422A JP S62262422 A JPS62262422 A JP S62262422A JP 10594586 A JP10594586 A JP 10594586A JP 10594586 A JP10594586 A JP 10594586A JP S62262422 A JPS62262422 A JP S62262422A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tisi2
- substrate
- vacuum
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 229910008479 TiSi2 Inorganic materials 0.000 abstract description 14
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 238000001771 vacuum deposition Methods 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はＴｉＳｉ２膜の形成方法に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for forming a TiSi2 film.
（従来の技術）
従来、半導体装置等に用いるＴｉＳｉ２膜は他の高融点
金属シリサイド膜の形成方法と同様に、１）Ｓｉ層を有
する基板表面にＴｉのみを堆積する知、１ｉ）ＴｉとＳ
ｉとを同時に堆積するかした後、一旦大気中に出して電
気炉やランプアニール装置等でアニールする方法等が行
われている。(Prior art) Conventionally, TiSi2 films used in semiconductor devices, etc. have been formed in the same way as other refractory metal silicide films: 1) depositing only Ti on the surface of a substrate having a Si layer, 1i) depositing Ti and S
A method is used in which, after simultaneously depositing 1 and 2, the material is exposed to the atmosphere and annealed using an electric furnace, a lamp annealing device, or the like.
（発明が解決しようとする問題点）
しかしながら、上記従来方法によって形成したＴｉＳｉ
２膜は大気中の運搬やアニールの際の雰囲気の影響で、
抵抗が増大している。例えば、ムラルカ（Ｓ、Ｐ、Ｍｕ
ｒａｒｋａ）によるシリサイドフォアブイエルニスアイ
アプリケーション（Ｓｉｌｉｃｉｄｅｓ ｆｏｒ ＶＬ
ＳＩＡｐｐｌｉｃａｔｉｏｎｓ、 Ｎｅｗ Ｙｏｒｋ
Ａｃａｄｅｍｉｃ Ｐｒｅｓｓ、 １９８３）に記載さ
れている様に前記ｉ）の方法で真空中で３０分のアニー
ルを行った時は１３１１Ω・ｃｍ以上、ｉｉ）の方法で
水素中で９００℃１３０分のアニールを行った時は〜２
５１１Ω。(Problems to be Solved by the Invention) However, TiSi formed by the above conventional method
Due to the influence of the atmosphere during transport and annealing, the two films
Resistance is increasing. For example, Murarka (S, P, Mu
Silicides for VL
SI Applications, New York
Academic Press, 1983), when annealing was performed in vacuum for 30 minutes using method i), the resistance was 1311 Ω·cm or more, and when annealing was performed for 130 minutes at 900°C in hydrogen using method ii) When I went ~2
511Ω.
ａｍの抵抗値である。It is the resistance value of am.
また、固体素子材料コンファレンス第１６回国際大会（
１９８４年）概要集、Ｐ、４９にあるように、ｉ）の方
法でＡｒ中、７００℃のアニールをランプアニール装置
によって３０〜１２０秒行って形成した場合、１４〜１
６ｐΩ・ｃｍである。これらの値は、２００ＯＡ以上の
膜厚のＴｉＳｉ２膜で得られたものであり、膜厚が本発
明の実施例のように１０００人の膜では比抵抗が増大し
てしまう可能性がある。In addition, the 16th International Solid State Device Materials Conference (
1984) Summary Collection, P. 49, when annealing is performed in Ar at 700°C for 30 to 120 seconds using a lamp annealing device using method i), 14 to 1
It is 6 pΩ·cm. These values were obtained for a TiSi2 film with a thickness of 200 OA or more, and if the film thickness is 1000 people as in the example of the present invention, the specific resistance may increase.
本発明の目的は低抵抗なＴｉＳｉ２膜の形成方法を提供
することにある。An object of the present invention is to provide a method for forming a low-resistance TiSi2 film.
（問題を解決するための手段）
本発明は少なくとも表面ｉ’−８ｉ層を有する基板表面
にＴｉを真空蒸着した後、７００℃以上のアニールによ
ってＴｉＳｉ２膜を形成する工程において、蒸着からア
ニールまでの工程を真空中で行うことを特徴とするＴｉ
Ｓｉ２膜の形成方法である。(Means for solving the problem) The present invention provides a process for forming a TiSi2 film by annealing at 700°C or higher after vacuum-depositing Ti on the surface of a substrate having at least a surface i'-8i layer. Ti characterized in that the process is carried out in vacuum
This is a method of forming a Si2 film.
（作用）
ＴｉＳｉ２膜は、気体分子を取り込み易いＴｉとＳｉの
反応によって生じる。膜堆積をスパッタによって行えば
、スパッタに用いるＡｒ等の気体成分を取り込み、膜堆
積後に大気にさらせば大気中の０２やＮ２を取り込んで
しまう。これら取り込まれた気体成分はアニール時にＴ
ｉＳｉ２膜の成長を阻害し、その電気抵抗値を増大させ
る。(Function) A TiSi2 film is formed by a reaction between Ti and Si, which easily incorporates gas molecules. If film deposition is performed by sputtering, gas components such as Ar used in sputtering will be taken in, and if the film is exposed to the atmosphere after deposition, O2 and N2 in the atmosphere will be taken in. During annealing, these incorporated gas components are
This inhibits the growth of the iSi2 film and increases its electrical resistance.
本発明のように、膜堆積とアニールを真空中で行い、し
かも、その間に一度も大気にさらすことがなければ気体
成分による電気抵抗の増大は防ぐことができる。As in the present invention, if film deposition and annealing are performed in a vacuum and the film is never exposed to the atmosphere during the process, an increase in electrical resistance due to gas components can be prevented.
（実施例）
本発明の一実施例を第１図（ａＸｂ）の断面図を使って
説明する。(Example) An example of the present invention will be described using a cross-sectional view of FIG. 1 (aXb).
第１図（ａ）に示すように酸洗浄及び希釈弗酸処理を施
したＳｉ基板１を真空蒸着装置内の基板加熱装置にセッ
トし、ｌＸ１Ｏ−７Ｔｏｒｒ以下に真空排気し、Ｓｉ基
板１を２００℃に加熱してＴｉ２を電子銃蒸着によって
４００人堆積し、引き続き、Ｔｉ２を表面に有する前記
Ｓｉ基板１を９００℃に加熱して３分間保持し第１図（
ｂ）に示すように、約１０００人のＴｉＳｉ２膜３を形
成した。As shown in FIG. 1(a), a Si substrate 1 that has been acid-cleaned and treated with diluted hydrofluoric acid is set in a substrate heating device in a vacuum evaporation device, and evacuated to a temperature of 1×1 O−7 Torr or less. ℃, and deposited 400 Ti2 by electron gun evaporation.Subsequently, the Si substrate 1 having Ti2 on the surface was heated to 900℃ and held for 3 minutes, as shown in FIG.
As shown in b), about 1000 TiSi2 films 3 were formed.
その後、前記Ｓｉ基板１の温度が１００６Ｃ以下になっ
てから真空中より取り出した。形成されたＴｉ５１２Ｍ
３の比抵抗は１１．４±０．４μΩ・ｃｍで報告された
いかなるＴｉＳｉ２よりも低抵抗だった。ＴｉＳｉ２膜
３の形成温度は上記の９００℃である必要はなく、７０
０℃以上であればいずれも同様の結果を得た。Thereafter, after the temperature of the Si substrate 1 became 1006 C or less, it was taken out from the vacuum. Formed Ti512M
The specific resistance of TiSi2 was 11.4±0.4 μΩ·cm, which was lower than any reported TiSi2. The formation temperature of the TiSi2 film 3 does not need to be the above-mentioned 900°C;
Similar results were obtained in all cases at temperatures above 0°C.
（発明の効果）
本発明によれば、極めて低抵抗なＴｉＳｉ２膜が短い熱
処理時間で再現性よく形成することができる。(Effects of the Invention) According to the present invention, an extremely low resistance TiSi2 film can be formed with good reproducibility in a short heat treatment time.
Claims (1)
蒸着によって堆積した後、７００℃以上のアニールによ
ってＴｉＳｉ＿２膜を形成する工程において、蒸着から
アニールまでの工程を真空中で行うことを特徴とするＴ
ｉＳｉ＿２膜の形成方法。In the process of depositing Ti by vacuum evaporation on the surface of a substrate having a Si layer on at least the surface, and then annealing at 700°C or higher to form a TiSi_2 film, the process from evaporation to annealing is performed in a vacuum.
Method for forming iSi_2 film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10594586A JPS62262422A (en) | 1986-05-08 | 1986-05-08 | Formation of tisi2 film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10594586A JPS62262422A (en) | 1986-05-08 | 1986-05-08 | Formation of tisi2 film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62262422A true JPS62262422A (en) | 1987-11-14 |
Family
ID=14420983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10594586A Pending JPS62262422A (en) | 1986-05-08 | 1986-05-08 | Formation of tisi2 film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62262422A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04226025A (en) * | 1990-04-16 | 1992-08-14 | Applied Materials Inc | Method forming titanium silicide con- ducting layer on silicon wafer |
| JPH05102075A (en) * | 1991-03-29 | 1993-04-23 | Applied Materials Inc | Method for forming tungsten contact having low resistance and low defect density for silicon semiconductor wafer |
| JPH07111252A (en) * | 1990-04-20 | 1995-04-25 | Applied Materials Inc | Method for formation of titanium nitride on semiconductor wafer by reaction of nitrogen-contained gas with titanium in integrated treatment system |
| JP2002280290A (en) * | 2001-03-21 | 2002-09-27 | Nec Corp | Mask for electron beam exposure, and method for electron beam exposure using the same |
| SG121692A1 (en) * | 2001-07-31 | 2006-05-26 | Inst Materials Research & Eng | Improvements in or relating to silicidation techniques |
| WO2011043120A1 (en) * | 2009-10-05 | 2011-04-14 | 住友電気工業株式会社 | Method for manufacturing a semiconductor device |
-
1986
- 1986-05-08 JP JP10594586A patent/JPS62262422A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04226025A (en) * | 1990-04-16 | 1992-08-14 | Applied Materials Inc | Method forming titanium silicide con- ducting layer on silicon wafer |
| JPH07111252A (en) * | 1990-04-20 | 1995-04-25 | Applied Materials Inc | Method for formation of titanium nitride on semiconductor wafer by reaction of nitrogen-contained gas with titanium in integrated treatment system |
| JPH05102075A (en) * | 1991-03-29 | 1993-04-23 | Applied Materials Inc | Method for forming tungsten contact having low resistance and low defect density for silicon semiconductor wafer |
| JP2002280290A (en) * | 2001-03-21 | 2002-09-27 | Nec Corp | Mask for electron beam exposure, and method for electron beam exposure using the same |
| SG121692A1 (en) * | 2001-07-31 | 2006-05-26 | Inst Materials Research & Eng | Improvements in or relating to silicidation techniques |
| WO2011043120A1 (en) * | 2009-10-05 | 2011-04-14 | 住友電気工業株式会社 | Method for manufacturing a semiconductor device |
| JP2011082254A (en) * | 2009-10-05 | 2011-04-21 | Sumitomo Electric Ind Ltd | Method for manufacturing semiconductor device |
| CN102549728A (en) * | 2009-10-05 | 2012-07-04 | 住友电气工业株式会社 | Method for manufacturing a semiconductor device |
| US8846531B2 (en) | 2009-10-05 | 2014-09-30 | Sumitomo Electric Industries, Ltd. | Method of manufacturing an ohmic electrode containing titanium, aluminum and silicon on a silicon carbide surface |
| CN102549728B (en) * | 2009-10-05 | 2015-06-03 | 住友电气工业株式会社 | Method for manufacturing a semiconductor device |
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