JPS62261188A - Semiconductor laser and manufacture thereof - Google Patents
Semiconductor laser and manufacture thereofInfo
- Publication number
- JPS62261188A JPS62261188A JP10548886A JP10548886A JPS62261188A JP S62261188 A JPS62261188 A JP S62261188A JP 10548886 A JP10548886 A JP 10548886A JP 10548886 A JP10548886 A JP 10548886A JP S62261188 A JPS62261188 A JP S62261188A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor laser
- active layer
- mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005253 cladding Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910000058 selane Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000000969 carrier Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体レーザ及びその製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor laser and a method for manufacturing the same.
従来の半導体レーザは、周知の如く、膜厚方向にダブル
へテロ構造を設けて、キャリアと光の閉じ込めを行なっ
ていた。例えば、特開昭６０−９１６９２のように、活
性層の上下を、エネルギーギャップの大きいＮ型クラッ
ドノーとＰ型クラッドノーではさみ込み、ダブルへテａ
！！４造を構成していた。As is well known, conventional semiconductor lasers have a double heterostructure in the film thickness direction to confine carriers and light. For example, as in JP-A-60-91692, the upper and lower parts of the active layer are sandwiched between N-type cladding and P-type cladding, which have a large energy gap, and double heathing is performed.
! ! It made up 4 buildings.
しかし、上記の従来技術は次のような間地点を有してい
る。すなわち、膜厚方向（上下方向）への１次元的なダ
ブルへテロ構造であるために、接合面方向（横方向）へ
のキャリアの閉じ込め及び光の閉じ込めが行なわれず、
したがって、発光効率が低く、シきい値電流が大きかっ
た。However, the above-mentioned conventional technology has the following intermediate points. In other words, since it is a one-dimensional double heterostructure in the film thickness direction (vertical direction), carrier confinement and light confinement are not performed in the junction surface direction (lateral direction).
Therefore, the luminous efficiency was low and the threshold current was large.
本発明はこのような問題点を解決するものであり、その
目的とするところは、上下方向のみならず横方向にも閉
じ込め効果を有する２次元的なダブルへテロ構造な夾現
し、発光効率が篩＜、シきいＩｌ［１Ｊｔ流の低い半導
体レーザを提供することにある。The present invention is intended to solve these problems, and its purpose is to create a two-dimensional double heterostructure that has a confinement effect not only in the vertical direction but also in the lateral direction, thereby increasing the luminous efficiency. The object of the present invention is to provide a semiconductor laser with a low current of 1 Jt.
本発明の半導体レーザは、ストライブ状の活性層の上下
に、前記活性ｒｍよりもエネルギーギヤツプの大きい第
１．及び第２のクラッド層を配置し、かつ、前記活性層
の左右に、前記活性層よりもエネルギーギヤツプの大き
い第３及び第４のクラッドＭを配置したことを特徴とし
１、また、本発明の半導体レーザの製造方法は、マスク
を用いて選択的に光の照射を行なう有機金属化学気相成
長法によシ、前ｄピ活性ノー及び前記第３及び第４のク
ラッド層を同時にブレーナ状に形成することを特徴とす
る。The semiconductor laser of the present invention has first and second layers above and below the stripe-like active layer, each having an energy gap larger than the active rm. and a second cladding layer, and third and fourth cladding M having a larger energy gap than the active layer are arranged on the left and right sides of the active layer. The method for manufacturing a semiconductor laser according to the invention uses a metal organic chemical vapor deposition method in which light is selectively irradiated using a mask. It is characterized by being formed into a shape.
上記の構成によれば、光の照射を行なう有機金属化学気
相成長法によシ成長薄膜の混晶比の制御を行なうために
、選択的に光の照射を行なえば任意の領域のエネルギー
ギャップを変化させ、ブレーナ状に活性層とクランド層
を同時に作り込むことができる。According to the above configuration, in order to control the mixed crystal ratio of a thin film grown by metalorganic chemical vapor deposition using light irradiation, selective light irradiation can change the energy gap in any region. It is possible to create an active layer and a crund layer at the same time in a Blenner shape by changing the .
〔実施例〕 以下、実施例に基づいて本発明の詳細な説明する。〔Example〕 Hereinafter, the present invention will be described in detail based on Examples.
＠１図は本発明の半導体レーザの構造に示す斜視図であ
る。以下、便宜上、Ｇａ＾ａ／ＡｔＧａＡａの材料系な
用いて説明するが、他の材料系（例えば、ＩｎｄａＰ／
ＧａＡｓ、 ＴｎＧａＡｔＰ／ＧａＡ１． ＩｎＧａＡ
ｍＰ／ｒｎｐ） ４を用いても側ら差し支えない。ｎ型
ＧａＡｍ１＆１０１上に、ｎ−ＧａＡａのバッファ層１
０２が設けられている。この上にはΔ−ＡｔＧａ入Ｓの
鷹１のクラッドＪ＠ １０３と、１−ＧａＡａのストラ
イブ状活性層１０４と、Ｐ−ＡｔＧａＡｓ の第２のク
ランド層１０６が設けられ、膜厚方向（図中２方向）に
ダブルへテロ構造を構成している。さらに又トライブ状
の活性層１０４の両側には、１−ＡｔＧａＡｓの第３の
クランド層１０５が設けられ、横方向（図中Ｘ方向）に
もダブルへテロ構造を構成している。し九がって、活性
層は２次元的なダブルへテロ構造で囲まれておυ、この
点が本発明の特徴である・
これによシ、キャリアと放射光が活性層中に有効に閉じ
込められ、半導体レーザの特性改善に大きく寄与する。Figure @1 is a perspective view showing the structure of the semiconductor laser of the present invention. For convenience, the following explanation will be based on the Ga^a/AtGaAa material system, but other material systems (for example, IndaP/
GaAs, TnGaAtP/GaA1. InGaA
mP/rnp) 4 may be used from the side. N-GaAa buffer layer 1 on n-type GaAm1&101
02 is provided. On top of this, a Δ-AtGa-containing S cladding J@ 103, a 1-GaAa striped active layer 104, and a P-AtGaAs second cladding layer 106 are provided. It forms a double heterostructure in the middle 2 directions). Furthermore, a third landing layer 105 of 1-AtGaAs is provided on both sides of the tribe-shaped active layer 104, forming a double heterostructure in the lateral direction (X direction in the figure). Therefore, the active layer is surrounded by a two-dimensional double heterostructure υ, which is a feature of the present invention. Due to this, carriers and synchrotron radiation are effectively transmitted into the active layer. It is confined and greatly contributes to improving the characteristics of semiconductor lasers.
これらの効果については後に詳述する。また、１０７は
Ｐ−ＧａＡｍの中ヤップ層であシ、ｐａ！！電極１０８
に接続している。１０９はｎ型ＧａＡｍ基板１０１に接
触するｎ型電極である。ま九、本実施例の場合、注入電
流の狭窄は、エネルギーギヤツプが大きく、シかも１型
で高抵抗の第３のクラッド層１０５により行っているが
、この方式については櫨々の変形が可能である。次に図
中Ａに及びＩＩ Ｂ’断面における構造上の分布につい
て述べ、本発明の特徴をよシ明確にする。These effects will be detailed later. In addition, 107 is the intermediate layer of P-GaAm, pa! ! electrode 108
is connected to. 109 is an n-type electrode that contacts the n-type GaAm substrate 101; In the case of this embodiment, the injection current is constricted by the third cladding layer 105, which has a large energy gap and is probably type 1 and has a high resistance. is possible. Next, the structural distribution in the cross sections A and II B' in the figure will be described to clarify the features of the present invention.
第２図はＡｔ組成比、エネルギーギャップＥｆ及び屈折
率ｎの分布を示すグラフで、（ａ）がＡＡ′断面（Ｘ方
向）に関するもの、（ｂ）がＢ Ｂ’断面（２方向）に
関するものである。図よシ明らかなように、Ｘ方向と２
方向について、Ａｔ組成比、エネルギーギヤツプ及び屈
折率が同様の分布を有している点が本発明の大きな特徴
である。すなわち、活性層ではｋＬｘｃ；ｈＩ−１ｘ
ＡＭ の＾１ｍ戎比Ｘが小さく、し九がってＥｆは小さ
くｎは大きくなる。活性Ｉ−に隣接するπ１．第２．第
３のクラッド層では逆にＸが大きく、したがってＥｔは
大きくｎは小さくなる。Figure 2 is a graph showing the distribution of At composition ratio, energy gap Ef, and refractive index n, where (a) is for the AA' cross section (X direction), and (b) is for the B B' cross section (two directions). It is. As is clear from the figure, the X direction and 2
A major feature of the present invention is that the At composition ratio, energy gap, and refractive index have similar distributions in terms of direction. That is, in the active layer kLxc; hI-1x
The ^1m ratio X of AM is small, so Ef is small and n is large. π1. adjacent to active I-. Second. Conversely, in the third cladding layer, X is large, so Et is large and n is small.
このように、Ｘ方向にも２方向にもダブルへテロ構造が
構成されている。これによりキャリア及び放射光は２次
元的に閉じ込められる。In this way, a double heterostructure is constructed in both the X direction and the two directions. As a result, carriers and emitted light are confined two-dimensionally.
第３図は上記のように構成された半導体レーザの特性を
示すグラフである。横軸は注入１！流、縦軸は出射光の
光出力である。図中、実線は本発明による半導体レーザ
の特性を示し、破線は２方向のみにダブルへテロ構造ケ
有する従来の半導体レーザの特性を示すものである。図
のように本発明による半導体レーザでは、従来の半導体
レーザに比べて、しきい値電流が約２７５に減少し、倣
分量子効率が高くなってνす、デバイス全体として、発
光の効率比が達成されている。こｆｉは、前述のように
、キャリアと放射光が活性層中に有効に閉じ込められて
いるためである。これらの効果によシ、低［流動作の高
出力半導体レーザゲ実現することが可能となる。FIG. 3 is a graph showing the characteristics of the semiconductor laser configured as described above. The horizontal axis is injection 1! The vertical axis is the optical output of the emitted light. In the figure, the solid line shows the characteristics of the semiconductor laser according to the present invention, and the broken line shows the characteristics of the conventional semiconductor laser having a double heterostructure in only two directions. As shown in the figure, in the semiconductor laser according to the present invention, compared to the conventional semiconductor laser, the threshold current is reduced to about 275, and the quantum efficiency is increased. has been achieved. This is because carriers and emitted light are effectively confined in the active layer, as described above. These effects make it possible to realize a high-power semiconductor laser with low current operation.
第４図は本発明による半導体レーザの襄遣方法に用いら
れる光照射有機金網化学気相成長法を示す概略図である
。）ｆ、 ＡｓＨ３，ｆ（ＩＳ＊、↑ＭＯａ、 ＴＭ＾
４ＤＥＺｎの原料カスが゛マスフローコントローラ（Ｍ
ＦＣ）を通してチェンバー４０４に導入された後、反応
して基板４０６上へＵＡＡ＠、 ＡｔＧｍＡｍ等の＃膜
がエピタキシャル成長する。使用後のガスはａ−タリポ
ンプ（ＲＰ、 ）な通して排気されるウチェンバー内で
は、ＲＦ；イル４０５による誘導加熱によりサセプタ４
０７が６００〜８００℃に加熱される。一方、エキシマ
レーザ等の光源４０１から出射された元はミラー４０２
を経て基板４０６へ照射される。途中にはマスク４０５
が置かれており、そのパターンに応じて基板４０６への
光照射領域と非照射領域が決定される。エキシマレーザ
光としては、例えばＡｒＦを用いたＩＳ’３ｎｍの高出
力コヒーレント光が使われる。上記の方式によυ、ｉ６
Ｅ仮のｔｆ：意の場所に光を照射しながらエピタキシャ
ル成長することができる。FIG. 4 is a schematic diagram showing the light irradiation organic wire mesh chemical vapor deposition method used in the semiconductor laser processing method according to the present invention. )f, AsH3,f(IS*, ↑MOa, TM^
4DEZn raw material waste is transferred to mass flow controller (M
# film such as UAA@, AtGmAm, etc. is epitaxially grown on the substrate 406 by reaction. After use, the gas is exhausted through the a-tary pump (RP).In the chamber, the susceptor 4 is
07 is heated to 600-800°C. On the other hand, the source of light emitted from a light source 401 such as an excimer laser is a mirror 402.
The light is then irradiated onto the substrate 406. There is a mask 405 on the way
A light irradiation area and a non-irradiation area of the substrate 406 are determined according to the pattern. As the excimer laser light, for example, a high-power coherent light of IS'3 nm using ArF is used. According to the above method, υ, i6
E Temporary tf: Epitaxial growth can be performed while irradiating light onto desired locations.
第３図は光照射を伴なう有機金属化学気相成長法による
混晶組成制御の原理を示すグラフである。FIG. 3 is a graph showing the principle of mixed crystal composition control by organometallic chemical vapor deposition accompanied by light irradiation.
４１＃Ｉ軸はエピタキシャル成畏編度、縦軸はＡ４！Ｇ
＆１−ｘＡｍのＡｔＭｉ成比Ｘである。図中、実線は光
照射を伴なわない通常の有機金属化学気相成長法の場合
、破線は光照射を伴なう有機金属化学気相成長法の場合
のデータをそれぞれ示している。照射光は波長１９５ｎ
ｍのＡｒＦエキシマレーザ九である。グラフより明らか
なように、すべての成長温度範囲において、光照射によ
りＡｔ、ｊｆｉ４成比Ｘが大きくなる。これはエキシマ
レーザ光のエネルギーにより、原料のＴＭＡｔ の分解
が促進されるためである。したがって第４図に示した方
法を用いれば、第１図及び第２図のような半導体レーザ
を実現することができる。丁なわち、元の照射されない
領域はＡｔ組成比Ｘの小さい活性層に、また光の照射さ
れる鎖酸はｈＬ組成比Ｘの大きい第３のり２ンド層にな
る。し九がって、これらの層をプレーナ状に同時に製造
することができる。これら以外のノー、例えば第１．第
２のクラッド脇等には光照射を行っても、行わなくても
良い。41# The I axis is epitaxial, and the vertical axis is A4! G
The AtMi composition ratio X of &1-xAm. In the figure, the solid line shows data for normal metal-organic chemical vapor deposition without light irradiation, and the broken line shows data for metal-organic chemical vapor deposition with light irradiation. Irradiation light has a wavelength of 195n
m ArF excimer laser 9. As is clear from the graph, the At and jfi4 ratios X increase due to light irradiation in all growth temperature ranges. This is because the energy of the excimer laser light accelerates the decomposition of the raw material TMAt. Therefore, by using the method shown in FIG. 4, semiconductor lasers as shown in FIGS. 1 and 2 can be realized. That is, the original non-irradiated region becomes an active layer with a small At composition ratio X, and the chain acid irradiated with light becomes a third adhesive layer with a large hL composition ratio X. These layers can thus be manufactured simultaneously in planar form. Nos other than these, such as No. 1. Light irradiation may or may not be applied to the sides of the second cladding, etc.
以上、ＡｔＧａＡ１のＡ４組成比を光照射により制御す
る方法について述べたが、これ以外の材料にも本発明は
適用可能である。例えば、Ａｔ組成比を光によシ制御し
て、活性層のｒｎＧａＦと第３のタラツドノ−のＩｎＧ
ａＡｔＰを同時にプレーナ状に作り込むこともａＴ能で
ある。また、エキシマレーザ光の波長を変えたり、他の
光源を用いることにより、ＩｎＧａ＾−ＰなどｈＬ以外
の組成比を光で制御することも可能である。Although the method of controlling the A4 composition ratio of AtGaA1 by light irradiation has been described above, the present invention is also applicable to other materials. For example, by controlling the At composition ratio by light, rnGaF in the active layer and InG in the third layer can be formed.
Simultaneously creating aAtP into a planar shape is also an aT function. Furthermore, by changing the wavelength of excimer laser light or using another light source, it is also possible to control the composition ratio of materials other than hL, such as InGa^-P, with light.
本発明は次のような優れた効果を有する。 The present invention has the following excellent effects.
第１に、しきい値電流が小さく、微分端子効率の晶い大
出力半導体レーザな実現できる。これは前述のように、
従来のｍ厚方向への１次元的なダブルへテロ構造とは異
なり、本発明の半導体レーザＣよ２次元的なダブルへテ
ロ構造を有し、キャリアと放射光に対していい閉じ込め
効果？有する次めである。また、横方向にもダブルへテ
ロ構」危を持つために、横モードのＫＩＩｉ御にも有利
である。First, it is possible to realize a high-output semiconductor laser with a small threshold current and a high differential terminal efficiency. As mentioned above, this
Unlike the conventional one-dimensional double heterostructure in the m-thickness direction, the semiconductor laser C of the present invention has a two-dimensional double heterostructure, which has a good confinement effect on carriers and emitted light. The next step is to have one. Also, since it has the danger of a double heterostructure in the lateral direction, it is also advantageous for controlling the KIIi in lateral mode.
第２に、大気にさらすことなく連続したエピタキシャル
成長で半導体レーザを製造することができる。これによ
り従来のように薄膜表面の酸化や汚染などの憇影響な受
けることがなくなり、発光効率の高い半導体レーザケ安
定に歩留）良く作ることができる。Second, semiconductor lasers can be manufactured by continuous epitaxial growth without exposure to the atmosphere. This eliminates the undesirable effects of oxidation and contamination on the thin film surface as in the past, and allows semiconductor lasers with high luminous efficiency to be produced stably and at a high yield.
ｙＪＩＪ３に、４Ｉ造プロセスが簡略化され、低コスト
化が実現できる。従来、フォトエツチング工程を通るた
びにエピタキシャル成長を行なってい九のに対して、本
発明によれば、フォトエッチフグ工８をａＴことなく連
続し１こ１回のエピタキシャル成長で半導体レーザを作
製することができる。これにより低コスト比が実現され
る。In yJIJ3, the 4I manufacturing process is simplified and costs can be reduced. Conventionally, epitaxial growth was performed each time the photoetching process was passed, but according to the present invention, a semiconductor laser can be manufactured by continuous epitaxial growth one by one without passing through the photoetching process 8. can. This results in a low cost ratio.
以上述べたように、本発゛−ｉは号れ念効果を有するも
のであろうAs mentioned above, this project-i will have a commemorative effect.
第１図は本発明による半導体レーザを示す斜視図である
。
第２図は本発明による半導体レーザ（４−おける＾ｔＩ
Ａ成比、エネルギーギヤラグ、屈折率の分布を示すグラ
フである。
＠３図は本発明による半導体レーザの特性を示すグラフ
である。
第４図は光照射有機金属化学気相成長法の概略図である
。
第３図は光照射有機金属化学気相成長法による混晶組成
制御の原理な示すグラフである。
以上
第１ＵＡ
第２＠
０ ダ０ ／ＤＯシ支入嘴こシ先
（、、、八）
第３図
１１４図
第３図FIG. 1 is a perspective view showing a semiconductor laser according to the present invention. Figure 2 shows the semiconductor laser according to the present invention (4-
It is a graph showing the distribution of A composition ratio, energy gear lag, and refractive index. Figure @3 is a graph showing the characteristics of the semiconductor laser according to the present invention. FIG. 4 is a schematic diagram of the light irradiation metalorganic chemical vapor deposition method. FIG. 3 is a graph showing the principle of mixed crystal composition control by light irradiation metalorganic chemical vapor deposition. Above is the 1st UA 2nd @ 0 Da 0 /DO Si input beak tip (,,,8) Fig. 3 114 Fig. 3
Claims (2)
もエネルギーギヤツプの大きい第１及び第２のクラッド
層を配置し、かつ、前記活性層の左右に、前記活性層よ
りもエネルギーギヤツプの大きい第３のクラッド層を配
置したことを特徴とする半導体レーザ。(1) Above and below a striped active layer, first and second cladding layers having a larger energy gap than the active layer are arranged, and on the left and right sides of the active layer, cladding layers with a larger energy gap than the active layer are arranged. A semiconductor laser characterized in that a third cladding layer with a large gap is disposed.
属化学気相成長法により、前記活性層及び前記第３のク
ラッド層を同時にプレーナ状に形成することを特徴とす
る半導体レーザの製造方法。(2) Manufacturing a semiconductor laser characterized in that the active layer and the third cladding layer are simultaneously formed into a planar shape by metalorganic chemical vapor deposition in which light is selectively irradiated using a mask. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10548886A JPS62261188A (en) | 1986-05-08 | 1986-05-08 | Semiconductor laser and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10548886A JPS62261188A (en) | 1986-05-08 | 1986-05-08 | Semiconductor laser and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62261188A true JPS62261188A (en) | 1987-11-13 |
Family
ID=14408977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10548886A Pending JPS62261188A (en) | 1986-05-08 | 1986-05-08 | Semiconductor laser and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62261188A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188932A (en) * | 1987-01-31 | 1988-08-04 | Toyoda Gosei Co Ltd | Method for vapor growth of gallium nitride compound semiconductor |
| JPS63236385A (en) * | 1987-03-25 | 1988-10-03 | Hitachi Ltd | Semiconductor light emitting element |
-
1986
- 1986-05-08 JP JP10548886A patent/JPS62261188A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188932A (en) * | 1987-01-31 | 1988-08-04 | Toyoda Gosei Co Ltd | Method for vapor growth of gallium nitride compound semiconductor |
| JPS63236385A (en) * | 1987-03-25 | 1988-10-03 | Hitachi Ltd | Semiconductor light emitting element |
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