JPS62260773A - High density silicon carbide sintered body and manufacture - Google Patents
High density silicon carbide sintered body and manufactureInfo
- Publication number
- JPS62260773A JPS62260773A JP61103484A JP10348486A JPS62260773A JP S62260773 A JPS62260773 A JP S62260773A JP 61103484 A JP61103484 A JP 61103484A JP 10348486 A JP10348486 A JP 10348486A JP S62260773 A JPS62260773 A JP S62260773A
- Authority
- JP
- Japan
- Prior art keywords
- density
- silicon carbide
- plasma
- sintered body
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 23
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000003575 carbonaceous material Substances 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 18
- 238000005245 sintering Methods 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000005011 phenolic resin Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000003763 carbonization Methods 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920005547 polycyclic aromatic hydrocarbon Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高密度炭化けい素焼結体及びその製造方法に関
する。更に詳しくは炭化けい素に遊離炭素を適当量含有
させ、高密度で、かつ高電気伝導度と機械的強度の優れ
た炭化けい素焼結体及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a high-density silicon carbide sintered body and a method for producing the same. More specifically, the present invention relates to a silicon carbide sintered body containing an appropriate amount of free carbon in silicon carbide, which has high density, high electrical conductivity, and excellent mechanical strength, and a method for producing the same.
従来技術
炭化けい素は元来難焼結性であるため高密度にするのは
困難であった。最近ポロンやアルミニウムなどの焼結助
剤を用いて高密度化することに成功している。Prior Art Silicon carbide is inherently difficult to sinter, so it has been difficult to make it highly dense. Recently, we have succeeded in increasing the density using sintering aids such as poron and aluminum.
一方、炭化けい素に炭素を含ませることにより電気伝導
度を高くすることが試みられたが、従来の焼結法では炭
素を含ませるのは１重量％程度で、それより多く加える
と気孔率が２０〜３５％ともなり、（理論密度の６５〜
８０％）焼結し難く、高密度のものは得られなかった。On the other hand, attempts have been made to increase the electrical conductivity by incorporating carbon into silicon carbide, but in the conventional sintering method, the amount of carbon included is about 1% by weight, and if more than that is added, the porosity increases. is 20-35% (65-35% of the theoretical density)
80%) It was difficult to sinter, and a high density product could not be obtained.
発明の目的
本発明は従来の問題点を解消すべくなされたもので遊離
炭素を３〜３０重量％を含有し、かつ密度が理論密度の
８５％以上である高密度炭化けい素焼結体とその製造方
法を提供するにある。Purpose of the Invention The present invention has been made to solve the problems of the conventional art, and provides a high-density silicon carbide sintered body containing 3 to 30% by weight of free carbon and having a density of 85% or more of the theoretical density. To provide a manufacturing method.
発明の構成
本発明者らは従来法の炭化けい素焼粘性を改善すべく研
究の結果、さきに、炭化けい素粉束または炭化けい素粉
末に焼結助剤を混合したものを加圧成形し、該成形体を
非酸化雰囲気のプラズマにて焼結する方法を見出した。Structure of the Invention As a result of research to improve the sintering viscosity of silicon carbide in the conventional method, the present inventors first pressure-molded a bundle of silicon carbide powder or a mixture of silicon carbide powder and a sintering aid. discovered a method of sintering the molded body using plasma in a non-oxidizing atmosphere.
（特願昭５９−２３８２４号）更に研究を重ねた結果、
該プラズマ焼結法によると、炭化けい素に対し、遊離炭
素量を最大３０重量％含有させても理論密度８５％以上
の高密度のものが得られることを見出した。この知見に
基づいて本発明を完成した。(Patent Application No. 59-23824) As a result of further research,
It has been found that, according to the plasma sintering method, a high-density product with a theoretical density of 85% or more can be obtained even when silicon carbide contains a maximum of 30% by weight of free carbon. The present invention was completed based on this knowledge.
本発明の要旨は、
１）遊離炭素を３〜３０重量％を含有し、かつ密度が理
論密度の８５％以上である高密度炭化けい素焼結体。The gist of the present invention is as follows: 1) A high-density silicon carbide sintered body containing 3 to 30% by weight of free carbon and having a density of 85% or more of the theoretical density.
２）炭化けい素微粉末に３〜３０重量％の炭素質物また
は熱処理により炭素を前置生成する打機化合物を混合し
、混合物を成形し、該成形物を、非酸化雰囲気のプラズ
マにて焼結することを特徴とする遊離炭素を３〜３０重
四％を含有し、かつ密度が理論密度の８５％以上である
高密度炭化けい素焼結体の製造方法。にある。2) Mix 3 to 30% by weight of a carbonaceous material or a punching compound that pre-generates carbon by heat treatment with silicon carbide fine powder, mold the mixture, and sinter the molded product in plasma in a non-oxidizing atmosphere. A method for producing a high-density silicon carbide sintered body containing 3 to 30% by weight of free carbon and having a density of 85% or more of the theoretical density. It is in.
本発明で用いる炭化けい素はα−５ｉＣ，β−ＳｉＣで
もまた非晶質であってもよく、その平均粒径は粒度が大
きくなると焼結が困難となるので、５μｍ以下、好まし
くは１μｍ以下であることが望ましい。また純度は焼結
体の特性を制御する点から出来るだけ高純度であること
が望ましい。The silicon carbide used in the present invention may be α-5iC, β-SiC, or amorphous, and its average particle size is 5 μm or less, preferably 1 μm or less, since sintering becomes difficult when the particle size becomes large. It is desirable that Further, it is desirable that the purity is as high as possible from the viewpoint of controlling the characteristics of the sintered body.
炭化けい素に混合する炭素源としては、カーボンブラッ
ク、コークス、炭素粉末等の炭素質粉末、または加熱に
より炭素を生成する有機化合物例えばフェノール樹脂、
パラフィン、多核芳香族炭化水素が用いられる。Carbon sources to be mixed with silicon carbide include carbonaceous powders such as carbon black, coke, and carbon powder, or organic compounds that generate carbon upon heating, such as phenol resins,
Paraffin and polynuclear aromatic hydrocarbons are used.
これらを炭化けい素粉末と均一に混合する。その混合割
合は焼結後の遊離炭素量として３〜３０重量％になるよ
うにする。遊離炭素量が３重量％未満では電気伝導度が
小さくなり、３０重量％を超えると成型性及び焼結性が
悪くなる。焼結助剤例えばボロン、アルミニウム、ベリ
リウム、バリウム、イツトリウム、ニオブ、等を添加す
ると焼結は容易になる。These are uniformly mixed with silicon carbide powder. The mixing ratio is such that the amount of free carbon after sintering is 3 to 30% by weight. If the amount of free carbon is less than 3% by weight, the electrical conductivity will be low, and if it exceeds 30% by weight, the moldability and sinterability will be poor. Sintering is facilitated by adding sintering aids such as boron, aluminum, beryllium, barium, yttrium, niobium, etc.
必要に応じ結合剤、可塑剤、滑剤などを加えて成形性を
上げてもよい。If necessary, binders, plasticizers, lubricants, etc. may be added to improve moldability.
これらを混合後、成形後乾燥する。After mixing these, they are molded and dried.
得られた成形物を非酸化雰囲気のプラズマ中に挿入する
。急激に挿入すると、プラズマが消失したり、試料にひ
びが入ったりするので、ゆっくり挿入することが肝要で
ある。The obtained molded product is inserted into a plasma in a non-oxidizing atmosphere. It is important to insert slowly, as rapid insertion may cause the plasma to disappear or cracks in the sample.
プラズマの作動ガスは、アルゴン、窒素、ヘリウム、水
素の単独または混合ガスである。The working gas of the plasma is argon, nitrogen, helium, or hydrogen, singly or in combination.
プラズマの発生は電気的な方法例えば直流または交流に
よるプラズマの発生、及び高周波（ラジオ波、マイクロ
波）によるプラズマの発生が好ましい。これらの方法で
発生するプラズマには、平衡プラズマと非平衡プラズマ
とがあり、いずれでもよい。効率から考えると平衡プラ
ズマの方が好ましい。平衡プラズマは電子温度、イオン
温度。It is preferable to generate plasma using an electrical method such as direct current or alternating current, or using high frequency waves (radio waves, microwaves). Plasmas generated by these methods include either equilibrium plasma or non-equilibrium plasma. In terms of efficiency, equilibrium plasma is preferable. Equilibrium plasma has electron temperature and ion temperature.
ガス温度が等しいプラズマであり、非平衡プラズマは電
子温度が数千度から三万度であるが、イオン温度、ガス
温度は千度に以下と低いプラズマである。It is a plasma in which the gas temperatures are equal, and in nonequilibrium plasma, the electron temperature is from several thousand degrees to 30,000 degrees, but the ion temperature and gas temperature are low, at less than 1,000 degrees.
プラズマによる焼結時間は、試料やプラズマの条件にも
よるが、数秒から士数分である。The plasma sintering time ranges from several seconds to several minutes, depending on the sample and plasma conditions.
実施例１
β−ＳｉＣサブミクロン粉末に非晶質ボロンを０．５重
量％、および炭化後の残留炭素量にして３．０重量％の
フェノール樹脂をエタノール中でボ−ルミルにて１６時
間混合した。混合後６０〜７０℃に加熱して乾燥させた
。これを成型圧３０ＭＰａで１軸加圧し、２００ ＭＰ
ａで２次成型した。次いでこの圧粉体中のフェノール樹
脂を炭化するためにアルコン気流中で加熱処理した。そ
の後アルゴンプラズマ中にゆっくり挿入し、２分間焼結
させた。Example 1 β-SiC submicron powder, 0.5% by weight of amorphous boron, and 3.0% by weight of phenolic resin based on the amount of residual carbon after carbonization were mixed in ethanol in a ball mill for 16 hours. did. After mixing, the mixture was heated to 60 to 70°C and dried. This was uniaxially pressurized at a molding pressure of 30 MPa to 200 MPa.
Secondary molding was performed in a. Next, in order to carbonize the phenol resin in this green compact, it was heat-treated in an alcon gas stream. Thereafter, it was slowly inserted into an argon plasma and sintered for 2 minutes.
この時のプラズマの発生条件は次の通りであった。The plasma generation conditions at this time were as follows.
発振周波数４ ＭＨｚのラジオ波を４回巻コイルを通シ
て４３ｍｍφの石英反応管内のアルゴンガスに供給し、
アルゴンガスを絶縁破壊させてプラズマ化した。アノー
ド電圧は７．５ ｋＶ、アノード電流１．５１ Ａであ
った。ガス条件はアルゴン流量４０ＳＣＣＭ．ガス圧力
５０Ｔｏｒｒであった。Radio waves with an oscillation frequency of 4 MHz were supplied to argon gas in a 43 mmφ quartz reaction tube through a 4-turn coil.
Argon gas was caused to break down and turned into plasma. The anode voltage was 7.5 kV and the anode current was 1.51 A. The gas conditions were an argon flow rate of 40SCCM. The gas pressure was 50 Torr.
得られた焼結体の密度は理論密度の９５．７％であり、
これの比抵抗値は室温で測定して３３５±１４Ωｃｍで
あった。ビッカース硬度は２３７１ｋｇ／ｍｍ、破壊靱
性値は４．３５ＭＮ／ｍ３／２であった。The density of the obtained sintered body was 95.7% of the theoretical density,
The specific resistance value of this was measured at room temperature and was 335±14 Ωcm. The Vickers hardness was 2371 kg/mm, and the fracture toughness was 4.35 MN/m3/2.
実施例２゜
α−５ｉＣサブミクロン粉末の非晶質ボロンを０．５重
量％、および炭化後の残留炭素量にして５．０重量％の
フェノール樹脂をエタノール中でボールミルにて１６時
間混合した。混合後、加熱して乾燥させた。これを成型
圧３０ＭＰａで１軸加圧し、２００ ＭＰａで２次成型
した。次いでこの圧粉体中のフェノール樹脂を炭化する
ためにアルゴンガス気流中で加熱処理した。その後アル
ゴンプラズマにゆっくり挿入し、２分間焼結させた。Example 2 0.5% by weight of α-5iC submicron powder amorphous boron and 5.0% by weight of phenolic resin based on the amount of residual carbon after carbonization were mixed in ethanol in a ball mill for 16 hours. . After mixing, the mixture was heated and dried. This was uniaxially pressurized at a molding pressure of 30 MPa, and secondary molded at 200 MPa. Next, in order to carbonize the phenol resin in this green compact, it was heat-treated in an argon gas stream. After that, it was slowly inserted into an argon plasma and sintered for 2 minutes.
この時のプラズマの発生条件は次の通りであった。The plasma generation conditions at this time were as follows.
発振周波数４ Ｍ）ｌｚのラジオ波を４回巻コイルを通
じて４３ｍｍφの石英反応管内のアルゴンガスに供給し
、アルゴンガス絶縁破壊させてプラズマ化した。アノー
ド電圧は７．５ ｋＶ、アノード電流１．５１Ａである
。ガス条件はアルゴンガス流ｌ ４０ ＳＣＣＭ。Radio waves with an oscillation frequency of 4 M)lz were supplied to argon gas in a 43 mmφ quartz reaction tube through a 4-turn coil to cause dielectric breakdown of the argon gas and turn it into plasma. The anode voltage is 7.5 kV and the anode current is 1.51A. Gas conditions were argon gas flow l 40 SCCM.
ガス圧力５０Ｔｏｒｒである。The gas pressure was 50 Torr.
得られた焼結体の密度は理論密度の９４．７％であり、
これの比抵抗値は室温で測定して４７８±１７Ωｃｍで
あった。ビッカース硬度は２２９９ｋｇ／ｍｍ２、破壊
靭性値は４．０５ＭＮ／ｍ５／２であった。The density of the obtained sintered body was 94.7% of the theoretical density,
The specific resistance value of this was measured at room temperature and was 478±17 Ωcm. The Vickers hardness was 2299 kg/mm2, and the fracture toughness was 4.05 MN/m5/2.
実施例３゜
α−３ｉＣサブミクロン粉末に非晶質ボロンを０．５重
量％、および炭化後の残留炭素量にして７．０重量％の
パラフィンをエタノール中でボールミルにて１６時間混
合した。以後実施例２と同じプロセスに従い成型し、２
分間プラズマ焼結した。Example 3 α-3iC submicron powder was mixed in ethanol with 0.5% by weight of amorphous boron and 7.0% by weight of paraffin based on the amount of residual carbon after carbonization in a ball mill for 16 hours. Thereafter, molding was performed according to the same process as in Example 2, and 2
Plasma sintered for minutes.
プラズマ条件やガス条件などのプラズマ焼結条件を実施
例２と一致させた。Plasma sintering conditions such as plasma conditions and gas conditions were made to match those of Example 2.
得られた焼結体の密度は理論密度の９２．７％であり、
これの比抵抗値は室温で測定して２０６±４２Ωｃｍで
あった。ビッカース硬度は２３２５ｋｇ ／ ｍｕ”
、破壊靭性値は４．ＯＩＭＮ／ｍ″′／２であった。The density of the obtained sintered body was 92.7% of the theoretical density,
The specific resistance value of this was measured at room temperature and was 206±42 Ωcm. Vickers hardness is 2325 kg/mu”
, the fracture toughness value is 4. OIMN/m''/2.
実施例４
α−ＳｉＣサブミクロン粉末にアルミニウムを２．０重
量％、および炭化後の残留炭素量にして：へ。Example 4 2.0% by weight of aluminum was added to α-SiC submicron powder, and the amount of residual carbon after carbonization was changed to:.
ＩＱ、０重量％フェノール樹脂をエタノール中でボール
ミルにて１６時間混合した。以後実施例２と同じプロセ
スに従い成型し２分間プラズマ焼結した。IQ, 0% by weight phenolic resin was mixed in ethanol in a ball mill for 16 hours. Thereafter, it was molded according to the same process as in Example 2 and plasma sintered for 2 minutes.
プラズマ条件やガス条件などのプラズマ焼結条件を実施
例２と一致させた。Plasma sintering conditions such as plasma conditions and gas conditions were made to match those of Example 2.
得られた焼結体の密度は理論密度の９７．５％であり、
これの比抵抗値は室温で測定して２３Ω・ｃｍであった
。The density of the obtained sintered body was 97.5% of the theoretical density,
The specific resistance value of this was measured at room temperature and was 23 Ω·cm.
実施例５゜
α−３ｉＣサブミクロン粉末に非晶質ボロンを７．０重
量％、および炭化後の残留炭素量にして１０．０重量％
のフェノール樹脂及びカーボンブラックを５．０重量％
を加えエタノール中でボールミルにて１６時間混合した
。以後実施例２と同じプロセスに従い成型し２分間プラ
ズマ焼結した。プラズマ条件やガス条件などのプラズマ
焼結条件を実施例２と一致させた。Example 5 α-3iC submicron powder with 7.0% by weight of amorphous boron and 10.0% by weight of residual carbon after carbonization
5.0% by weight of phenolic resin and carbon black
was added and mixed in ethanol for 16 hours in a ball mill. Thereafter, it was molded according to the same process as in Example 2 and plasma sintered for 2 minutes. Plasma sintering conditions such as plasma conditions and gas conditions were made to match those of Example 2.
得られた焼結体の密度は理論密度の９２．６％であり、
これの比抵抗値は室温で測定して０．３Ω・ｃｍであっ
た。The density of the obtained sintered body was 92.6% of the theoretical density,
The specific resistance value of this was measured at room temperature and was 0.3 Ω·cm.
実施例６゜
α−３ｉＣサブミクロン粉末に非晶質ボロンを２．０重
量％、および炭素粉末を５．０重世％加えエタノール中
でボールミルにて１６時間混合しな。Example 6 2.0% by weight of amorphous boron and 5.0% by mass of carbon powder were added to α-3iC submicron powder and mixed in ethanol in a ball mill for 16 hours.
以後実施例２と同じプロセスに従い成型し２分間プラズ
マ焼結した。プラズマ条件やガス条件などのプラズマ焼
結条件を実施例２と一致させた。Thereafter, it was molded according to the same process as in Example 2 and plasma sintered for 2 minutes. Plasma sintering conditions such as plasma conditions and gas conditions were made to match those of Example 2.
得られた焼結体の密度は理論密度の９５．２％であり、
これの比抵抗値は室温で測定して１２３６Ω・ｃｍであ
りた。ビ・・カース硬度は２２４７ ｋｇ ／ ＊＊・
、破壊靭″性値は４．１５ＭＮ ／ ｍ５／２であった
。The density of the obtained sintered body was 95.2% of the theoretical density,
The specific resistance value of this was measured at room temperature and was 1236 Ω·cm. Bi-curse hardness is 2247 kg / **.
, the fracture toughness value was 4.15 MN/m5/2.
実施例７゜ 実施例５において、フェノール量１５．０重星％。Example 7゜ In Example 5, the amount of phenol was 15.0%.
カーボンブランク１５．０重量％に代えた以外は同様に
してプラズマ焼結した。Plasma sintering was performed in the same manner except that the carbon blank was replaced with 15.0% by weight.
得られた焼結体の密度は理論密度の８９．２％であり、
ビッカース硬度は２１００ｋｇ／ｍｍ２であった。The density of the obtained sintered body was 89.2% of the theoretical density,
Vickers hardness was 2100 kg/mm2.
発明の効果
本発明は実施例からも明らかな様に、従来では製造不可
能であった高密度で、炭素を多量含有する炭化けい素焼
結体を得ることが出来る。炭化けい素も炭素も高温に強
い物質であるため、しかも高密度焼結体であるため、種
々の雰囲気下で高温まで使用出来るようになった。電気
伝導度や潤滑性の制御ができると共に耐酸化性、耐蝕性
、耐摩耗性１機械的強度が上がった。これは炭化けい素
の特性に炭素の特性を加味した複合特性を存す焼結体で
あること。さらに高密度焼結体であり、粒成長のない微
細な微構造をした焼結体であることによる。Effects of the Invention As is clear from the examples, the present invention makes it possible to obtain a silicon carbide sintered body that has a high density and contains a large amount of carbon, which was previously impossible to manufacture. Both silicon carbide and carbon are substances that are resistant to high temperatures, and because they are high-density sintered bodies, they can now be used in various atmospheres up to high temperatures. Electrical conductivity and lubricity can be controlled, and oxidation resistance, corrosion resistance, wear resistance, and mechanical strength have been improved. This is a sintered body with composite properties that combine the properties of silicon carbide with the properties of carbon. Furthermore, it is a high-density sintered body and has a fine microstructure without grain growth.
以上の様に材質が優れているために、高温条件下や厳し
い雰囲気下でも使用可能な電子材料、構造材料となる優
れた効果を有する。As described above, since the material is excellent, it has excellent effects as an electronic material and a structural material that can be used even under high temperature conditions and harsh atmospheres.
Claims (1)
密度の８５％以上である高密度炭化けい素焼結体。 ２）炭化けい素微粉末に３〜３０重量％の炭素質物また
は熱処理により炭素を前量生成する有機化合物を混合し
、混合物を成形し、該成形物を非酸化雰囲気のプラズマ
にて焼結することを特徴とする遊離炭素を３〜３０重量
％を含有し、かつ密度が理論密度の８５％以上である高
密度炭化けい素焼結体の製造方法。[Scope of Claims] 1) A high-density silicon carbide sintered body containing 3 to 30% by weight of free carbon and having a density of 85% or more of the theoretical density. 2) Mix 3 to 30% by weight of a carbonaceous material or an organic compound that pre-generates carbon through heat treatment with silicon carbide fine powder, mold the mixture, and sinter the molded product in plasma in a non-oxidizing atmosphere. A method for producing a high-density silicon carbide sintered body containing 3 to 30% by weight of free carbon and having a density of 85% or more of the theoretical density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61103484A JPS62260773A (en) | 1986-05-06 | 1986-05-06 | High density silicon carbide sintered body and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61103484A JPS62260773A (en) | 1986-05-06 | 1986-05-06 | High density silicon carbide sintered body and manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62260773A true JPS62260773A (en) | 1987-11-13 |
Family
ID=14355281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61103484A Pending JPS62260773A (en) | 1986-05-06 | 1986-05-06 | High density silicon carbide sintered body and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62260773A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5874578A (en) * | 1981-08-10 | 1983-05-06 | ステンカー・コーポレーション | Method of sintering refractories by using heating gas directly |
| JPS59102872A (en) * | 1982-12-06 | 1984-06-14 | 日本特殊陶業株式会社 | Silicon carbide graphite composite sintered body and manufacture |
| JPS59131577A (en) * | 1983-01-17 | 1984-07-28 | イ−グル工業株式会社 | Silicon carbide material and manufacture |
| JPS60166264A (en) * | 1984-02-10 | 1985-08-29 | 科学技術庁無機材質研究所長 | Method of sintering silicon carbide |
| JPS60191081A (en) * | 1984-03-07 | 1985-09-28 | イビデン株式会社 | Precision work product of silicon carbide and manufacture |
-
1986
- 1986-05-06 JP JP61103484A patent/JPS62260773A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5874578A (en) * | 1981-08-10 | 1983-05-06 | ステンカー・コーポレーション | Method of sintering refractories by using heating gas directly |
| JPS59102872A (en) * | 1982-12-06 | 1984-06-14 | 日本特殊陶業株式会社 | Silicon carbide graphite composite sintered body and manufacture |
| JPS59131577A (en) * | 1983-01-17 | 1984-07-28 | イ−グル工業株式会社 | Silicon carbide material and manufacture |
| JPS60166264A (en) * | 1984-02-10 | 1985-08-29 | 科学技術庁無機材質研究所長 | Method of sintering silicon carbide |
| JPS60191081A (en) * | 1984-03-07 | 1985-09-28 | イビデン株式会社 | Precision work product of silicon carbide and manufacture |
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