JPS62252942A - Electrode plate for plasma etching - Google Patents
Electrode plate for plasma etchingInfo
- Publication number
- JPS62252942A JPS62252942A JP61087115A JP8711586A JPS62252942A JP S62252942 A JPS62252942 A JP S62252942A JP 61087115 A JP61087115 A JP 61087115A JP 8711586 A JP8711586 A JP 8711586A JP S62252942 A JPS62252942 A JP S62252942A
- Authority
- JP
- Japan
- Prior art keywords
- electrode plate
- plasma etching
- carbon
- resin
- high purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 16
- 229910021397 glassy carbon Inorganic materials 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 7
- 229920005989 resin Polymers 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 239000003575 carbonaceous material Substances 0.000 abstract description 3
- 239000007849 furan resin Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000005011 phenolic resin Substances 0.000 abstract description 3
- 238000010000 carbonizing Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005115 demineralization Methods 0.000 description 1
- 230000002328 demineralizing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011271 tar pitch Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体集積回路を製造する際、ウェハのプラ
ズマエツチング加工に用いる電極板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrode plate used in plasma etching of a wafer when manufacturing semiconductor integrated circuits.
半導体集積回路の微細化と高密度化が進展するに伴い、
高精度で微細パターンを形成できる平行平板形プラズマ
エツチング技術の重要性が高まってい７．−
平行平板形のプラズマエツチングは、上下に対向する平
滑板状の電極間に高周波電力を印加して発生させたガス
プラズマによってウェハをエツチングするもので、プラ
ズマ中に存在するハロゲン系反応ガスのフリーラジカル
とイオンが電極内の電界に引かれて下部電極上に置かれ
たウェハに垂直に入射し、フォトレジストのない部分を
食刻していくプロセス機構からなっている。As semiconductor integrated circuits become smaller and more dense,
Parallel plate plasma etching technology, which can form fine patterns with high precision, is becoming increasingly important7. - Parallel plate plasma etching is a method in which a wafer is etched using gas plasma generated by applying high-frequency power between vertically facing smooth plate-shaped electrodes. It consists of a process mechanism in which radicals and ions are attracted by the electric field within the electrode and are incident perpendicularly onto the wafer placed on the lower electrode, etching away the areas where there is no photoresist.
このプラズマエツチングに用いられる電極には導電性を
はじめ高純度性、化学的安定性などの特性が必要とされ
ており、従来、主に金属質の円板が用いられていた。と
ころが、金属質の電極は化学的安定性が不十分であるう
えに高純度にすることが困難である問題点があった。The electrodes used in this plasma etching are required to have properties such as conductivity, high purity, and chemical stability, and conventionally, metallic disks have been mainly used. However, metallic electrodes have problems in that they have insufficient chemical stability and are difficult to obtain with high purity.
次いで、これに代わる電極材として高密度黒鉛が試みら
れた。高密度黒鉛は優れた導電性と化学的安定性を備え
高純度化も容易であることから特性的には極めて好適な
電極材料である。しかしながら、この材料は、コークス
あるいはカーボンの微粉をタールピッチなどのバインダ
ー成分と共に高密度に成形したのち焼成、黒鉛化した巨
視的に粒体集合状の組織構造を有するため、プラズマ発
生中に組織を構成する微細な粒体が脱落して消耗を早め
たり、ウェハの上面を汚損して所定パターンの形成を阻
害する等の欠点を招く不都合があ−た。Next, high-density graphite was tried as an alternative electrode material. High-density graphite has excellent conductivity and chemical stability, and can be easily purified, making it an extremely suitable electrode material. However, this material has a macroscopic grain aggregate-like structure in which coke or carbon fine powder is molded into high density with a binder component such as tar pitch, then fired and graphitized, so the structure changes during plasma generation. There are disadvantages in that the constituent fine particles fall off, resulting in accelerated wear and tear, and the top surface of the wafer is stained, obstructing the formation of a predetermined pattern.
本発明は、プラズマエツチング用電極板としての最適材
質につき多角的に検討を重ねた結果、高純度のガラス状
カーボンが要求特性ならびに実用性能を十分に満足する
事実を確認し開発に至ったものである。すなわち、本発
明の構成は、高純度のガラス状カーボンからなるプラズ
マエツチング用電極板に存する。The present invention was developed after conducting a multifaceted study on the optimal material for an electrode plate for plasma etching, and after confirming that high-purity glassy carbon fully satisfies the required characteristics and practical performance. be. That is, the structure of the present invention consists in an electrode plate for plasma etching made of high-purity glassy carbon.
本発明にいうガラス状カーボンとは、フラン系樹脂、フ
ェノール系樹脂またはこれらの混合樹脂を炭化して得ら
れる組織的に極めて緻密かつ均質な三次元網目状のガラ
ス構造を有する特異な炭素質物で、プラズマエツチング
用電極板として次のように製造される。The glassy carbon referred to in the present invention is a unique carbonaceous material having an extremely dense and homogeneous three-dimensional network glass structure obtained by carbonizing furan resin, phenol resin, or a mixed resin thereof. The electrode plate for plasma etching is manufactured as follows.
液状のフラン系樹脂、フェノール系樹脂またはこれらの
混合樹脂、もしくはこれら液状樹脂に同一種類の硬化樹
脂微粉を添加混合したしのを均一肉厚の平板状に成形硬
化し、ついで樹脂板を不活性雰囲気下に８００℃程度の
温度で焼成炭化し、更に必要に応じて３０００℃までの
温度で黒鉛化処理する。このようにして得られたガラス
状カーボン板を脱灰炉に移し、塩素、フレオン等の精製
ガスを炉中に吹き込んで高純度処理する。Liquid furan resin, phenolic resin, or a mixture of these resins, or a mixture of these liquid resins with the same type of cured resin fine powder, is molded and cured into a flat plate with uniform thickness, and then the resin plate is inertized. It is fired and carbonized in an atmosphere at a temperature of about 800°C, and further graphitized at a temperature of up to 3000°C if necessary. The glassy carbon plate thus obtained is transferred to a deashing furnace, and purified gas such as chlorine or freon is blown into the furnace to perform high purity treatment.
電極板には、反応ガスがプラズマ中に円滑に流入するた
めの貫通小孔を多数設置しておくことが望ましい。貫通
小孔は、ガラス状カーボン板にした後に放電加工等の手
段で設ける方法のほか、樹脂板成形段階で炭化時の寸法
収縮を見込んで予め加工設置する方法がとられる。It is desirable that the electrode plate be provided with a large number of through holes for smooth flow of reaction gas into the plasma. The small through-holes can be formed by electric discharge machining or the like after the glass-like carbon plate is formed, or they can be formed in advance during the resin plate molding stage in anticipation of dimensional shrinkage during carbonization.
上記のようにして製造されたガラス状カーボンからなる
プラズマエツチング用電極板は、高密度黒鉛のような粒
体集合系とは全く異質な三次元網目状ガラス構造の均質
緻密組織を呈しており、高純度、高精度、高化学的安定
性などの適合物性を具備している。The electrode plate for plasma etching made of glassy carbon produced as described above has a homogeneous dense structure with a three-dimensional network glass structure, which is completely different from a particle aggregate system such as high-density graphite. It has suitable physical properties such as high purity, high precision, and high chemical stability.
本発明のプラズマエツチング用電極板は、上記したガラ
ス状カーボン特有の組織構造ならびに物性が総体的に作
用して使用時の組織崩壊および過度の消耗を極めて効果
的に阻止する。また電極板に多数の貫通小孔を設けた構
造とした場合には、プラズマ中への反応ガスの流入が円
滑となりエツチング速度を早めるとともに、エツチング
パターンを高精度に形成するために有効に機能する。In the electrode plate for plasma etching of the present invention, the above-described structural structure and physical properties unique to glassy carbon work together to extremely effectively prevent structural collapse and excessive wear during use. In addition, when the electrode plate has a structure with a large number of through-holes, the flow of reactive gas into the plasma becomes smooth, increasing the etching speed, and working effectively to form an etching pattern with high precision. .
かさ比重１．４５９／ｃｍ’、気孔率３％、ショア硬度
７５、曲げ強さ５８０ ｋｇｆ／ｃｊＩ”、弾性率２４
３゜ｋｇｒ／ａｘ”、固有抵抗３５ｘｌＯ−’ΩＱ次の
物理特性を有する厚さ３ 、０ ｘｘのガラス状カーボ
ン平板に２ｍｍ等間隔に直径０ 、８ ｍｍの貫通小孔
群を放電加工により穿設したのち、塩素ガスを用いて脱
灰高純度化処理をおこなった。Bulk specific gravity 1.459/cm', porosity 3%, Shore hardness 75, bending strength 580 kgf/cjI'', elastic modulus 24
A group of through holes with diameters of 0 and 8 mm were drilled at equal intervals of 2 mm in a glassy carbon flat plate with a thickness of 3 and 0 xx, which had the following physical properties: After this, demineralization and high purity treatment were performed using chlorine gas.
上記の高純度ガラス状カーボンを電極板としてプラズマ
エツチング装置にセットし、反応ガス：ＣＨＦバトリフ
ロロメタン）、反応チャンバー内のガス圧： ０．０５
Ｔｏｒｒ、電源周波数：４００ＫＨ７の条件でシリコ
ンウェハのエツチングをおこなった。The above-mentioned high-purity glassy carbon was set as an electrode plate in a plasma etching device, reaction gas: CHF (batrifluoromethane), and gas pressure in the reaction chamber: 0.05.
The silicon wafer was etched under the conditions of Torr and power frequency: 400KH7.
その結果、電極板は長時間の使用によっても組織の崩落
現象は全く認められず、また消耗の度合は高密度黒鉛の
電極板使用時の１／１０程度であった。ウェハのエツチ
ング速度も早まり、得られるエツチングパターンも高精
度のものであった。As a result, no tissue collapse phenomenon was observed in the electrode plate even after long-term use, and the degree of wear was about 1/10 of that when using a high-density graphite electrode plate. The etching speed of the wafer was also increased, and the etching pattern obtained was also highly accurate.
以上のとおり、本発明により提供される新規材質のプラ
ズマエツチング用電極板によれば、この目的に要求され
る材質特性を満足するうえ、高密度黒鉛のような一般カ
ーボン材使用時に起きる粒体脱落などの組織崩壊および
過度の消耗現象を効果的に消去することができるから、
長期間に亙り安定したエツチング加工が保障される。As described above, the electrode plate for plasma etching made of a new material provided by the present invention not only satisfies the material properties required for this purpose, but also eliminates the drop-off of particles that occurs when using general carbon materials such as high-density graphite. It can effectively eliminate tissue breakdown and excessive wear and tear phenomena such as
Stable etching processing is guaranteed over a long period of time.
Claims (1)
ング用電極板。 ２、高純度のガラス状カーボン板に多数の貫通小孔を設
ける特許請求の範囲第１項記載のプラズマエッチング用
電極板。[Claims] 1. An electrode plate for plasma etching made of high-purity glassy carbon. 2. The electrode plate for plasma etching according to claim 1, wherein a large number of small through holes are provided in a high-purity glassy carbon plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61087115A JPS62252942A (en) | 1986-04-17 | 1986-04-17 | Electrode plate for plasma etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61087115A JPS62252942A (en) | 1986-04-17 | 1986-04-17 | Electrode plate for plasma etching |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6249974A Division JPH07278851A (en) | 1994-09-19 | 1994-09-19 | Electrode plate for plasma etching and its production |
| JP6249973A Division JPH07169749A (en) | 1994-09-19 | 1994-09-19 | Electrode plate for plasma etching use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62252942A true JPS62252942A (en) | 1987-11-04 |
Family
ID=13905955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61087115A Pending JPS62252942A (en) | 1986-04-17 | 1986-04-17 | Electrode plate for plasma etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62252942A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62281426A (en) * | 1986-05-30 | 1987-12-07 | Teru Ramu Kk | Semiconductor treatment device |
| JPH0333007A (en) * | 1989-06-29 | 1991-02-13 | Toshiba Ceramics Co Ltd | Carbon member for plasma device |
| EP0421686A2 (en) * | 1989-10-02 | 1991-04-10 | Tokai Carbon Company, Ltd. | Electrode plate for plasma etching |
| JPH03129729A (en) * | 1989-07-03 | 1991-06-03 | Ibiden Co Ltd | Electrode plate for plasma etching |
| GB2231761B (en) * | 1989-05-18 | 1992-04-29 | Electricity Council | Surface fouling resistant materials |
| EP0600365A1 (en) * | 1992-12-02 | 1994-06-08 | Nisshinbo Industries, Inc. | Electrode for use in plasma etching |
| US5324411A (en) * | 1991-09-20 | 1994-06-28 | Toshiba Ceramics Co., Ltd. | Electrode plate for plasma etching |
| JPH07278851A (en) * | 1994-09-19 | 1995-10-24 | Tokai Carbon Co Ltd | Electrode plate for plasma etching and its production |
| EP0757374A1 (en) * | 1995-07-31 | 1997-02-05 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Etching electrode and manufacturing process thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127059A (en) * | 1976-04-16 | 1977-10-25 | Hitachi Ltd | Field emission type electron gun |
| US4367114A (en) * | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
| JPS62109317A (en) * | 1985-11-08 | 1987-05-20 | Anelva Corp | Plasma etching apparatus |
-
1986
- 1986-04-17 JP JP61087115A patent/JPS62252942A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127059A (en) * | 1976-04-16 | 1977-10-25 | Hitachi Ltd | Field emission type electron gun |
| US4367114A (en) * | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
| JPS62109317A (en) * | 1985-11-08 | 1987-05-20 | Anelva Corp | Plasma etching apparatus |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62281426A (en) * | 1986-05-30 | 1987-12-07 | Teru Ramu Kk | Semiconductor treatment device |
| GB2231761B (en) * | 1989-05-18 | 1992-04-29 | Electricity Council | Surface fouling resistant materials |
| US5226106A (en) * | 1989-05-18 | 1993-07-06 | Electricity Association Technology Limited | Ohmic heating apparatus using electrodes formed of closed microporosity material |
| JPH0333007A (en) * | 1989-06-29 | 1991-02-13 | Toshiba Ceramics Co Ltd | Carbon member for plasma device |
| JPH03129729A (en) * | 1989-07-03 | 1991-06-03 | Ibiden Co Ltd | Electrode plate for plasma etching |
| EP0421686A2 (en) * | 1989-10-02 | 1991-04-10 | Tokai Carbon Company, Ltd. | Electrode plate for plasma etching |
| US5324411A (en) * | 1991-09-20 | 1994-06-28 | Toshiba Ceramics Co., Ltd. | Electrode plate for plasma etching |
| EP0600365A1 (en) * | 1992-12-02 | 1994-06-08 | Nisshinbo Industries, Inc. | Electrode for use in plasma etching |
| JPH07278851A (en) * | 1994-09-19 | 1995-10-24 | Tokai Carbon Co Ltd | Electrode plate for plasma etching and its production |
| EP0757374A1 (en) * | 1995-07-31 | 1997-02-05 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Etching electrode and manufacturing process thereof |
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