JPS62237784A - Semiconductor laser exciting solid-state laser - Google Patents
Semiconductor laser exciting solid-state laserInfo
- Publication number
- JPS62237784A JPS62237784A JP8034386A JP8034386A JPS62237784A JP S62237784 A JPS62237784 A JP S62237784A JP 8034386 A JP8034386 A JP 8034386A JP 8034386 A JP8034386 A JP 8034386A JP S62237784 A JPS62237784 A JP S62237784A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- laser
- excitation
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 230000005284 excitation Effects 0.000 claims abstract description 13
- 238000005192 partition Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000007787 solid Substances 0.000 claims abstract description 4
- 230000010355 oscillation Effects 0.000 claims description 9
- 238000005253 cladding Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 4
- 230000007704 transition Effects 0.000 abstract description 4
- 230000035699 permeability Effects 0.000 abstract 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 230000005281 excited state Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- -1 rare earth ions Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、レーザ加工や各種のレーザ計測に利用される
半導体レーザ励起固体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor laser-excited solid-state laser used for laser processing and various laser measurements.
（従来の技術とその問題点）
近年、レーザ加工あるいは各種のレーザ計測への応用上
から、Ｎ（１：ＹＡＧ結晶をはじめとする固体レーザに
対する需要が増大の機運にある。かかる固体レーザは超
短パルス発生など光パルス波形の制御が容易であるなど
他種のレーザに見られない特色を有しているが、通常可
視または紫外光発光ランプを励起用光源に使用する必要
があるなど取り扱いの上で難点を有していた。最近にお
いては、半導体レーザあるいは発光ダイオードによる励
起法が採用されているが、依然光結合の効率・調整の複
雑さ・レーザの大きさなどの点で問題出が残されていて
、かかる目的への広範な応用を阻んでいた。(Conventional technology and its problems) In recent years, the demand for solid-state lasers such as N(1:YAG crystal) has been increasing for applications in laser processing and various laser measurements. Although it has features not found in other types of lasers, such as short pulse generation and easy control of the optical pulse waveform, it is difficult to handle, such as the need to use a visible or ultraviolet light emitting lamp as the excitation light source. Recently, excitation methods using semiconductor lasers or light emitting diodes have been adopted, but problems still arise in terms of optical coupling efficiency, complexity of adjustment, and laser size. This has prevented its widespread application for such purposes.
本発明は、かかる状況にかんがみ効率よく、小型でかつ
調整容易な半導体励起固体レーザを実現することを目的
とする。In view of this situation, it is an object of the present invention to realize an efficient, compact, and easily adjustable semiconductor-excited solid-state laser.
（問題点を解決するための手段）
前述の問題点を解決するために本発明が提供する半導体
レーザ励起固体レーザは、電流励起により発振する半導
体レーザを励起源とし、Ｎｄイオンを含有する固体を発
振源とする固体レーザであって、該半導体レーザが１個
以上の０．８１μｍの発振波長を有する量子井戸構造の
活性層を有し、該量子井戸を隔てる隔壁領域に１モル％
以上のＮｄを含有し、前記量子井戸領域および隔壁領域
ならびにクラッド層が基板結晶と同一の格子常数を有し
、発振部の両端面に０．８１μｍ光に対して完全に反射
性であり１．０６μｍに対して部分的に透過性である被
膜を有してなる。(Means for Solving the Problems) In order to solve the above-mentioned problems, the semiconductor laser-excited solid-state laser provided by the present invention uses a semiconductor laser that oscillates by current excitation as an excitation source, and uses a solid state containing Nd ions as an excitation source. A solid-state laser used as an oscillation source, the semiconductor laser having an active layer of one or more quantum well structures having an oscillation wavelength of 0.81 μm, and a partition wall region separating the quantum wells having a concentration of 1 mol %.
The quantum well region, the partition wall region, and the cladding layer have the same lattice constant as the substrate crystal, and both end faces of the oscillation part are completely reflective for 0.81 μm light; It has a coating that is partially transparent to 0.6 μm.
（作用）
周知のように、量子井戸型半導体レーザにおいては、発
振波長は井戸部分のバンド幅によって決定され隔壁部分
は直接発振に関係しない。隔壁部分に３価のＮｔ１イオ
ンを含有せしめると、発撮光の一部が吸収され負温度状
態になる。しかるに本発明におけるレーザにおいては光
導波路構造と共振器構造を有しているから、０．８１μ
ｍと１．０６μｍ光の発振が行われるが、前者は端面に
よって完全に反射されるので、後者のみが外部に取り出
される。かかる３価の希土類イオンを含有するＧａＡθ
をけじめとする■−■化合物半導体結晶の成長について
は、たとえばＷ、Ｈ，Ｋｎｎｓｎ らによる文献（アプ
ライド・フィジックス警しターズ誌４６巻９号８７０ペ
ージより）に記載があり、適当な条件下で成長を行うこ
とにより、かなり良好な発光特性を有する結晶が得られ
ることが明らかにされている。(Function) As is well known, in a quantum well type semiconductor laser, the oscillation wavelength is determined by the bandwidth of the well portion, and the partition wall portion is not directly related to oscillation. When the partition wall portion contains trivalent Nt1 ions, a part of the emitted light is absorbed, resulting in a negative temperature state. However, since the laser according to the present invention has an optical waveguide structure and a resonator structure,
Light of m and 1.06 μm is oscillated, but since the former is completely reflected by the end face, only the latter is extracted to the outside. GaAθ containing such trivalent rare earth ions
The growth of compound semiconductor crystals under suitable conditions is described, for example, in the literature by W. H. Knnsn et al. It has been shown that the growth results in crystals with fairly good luminescent properties.
（実施例）
本発明の主要な特徴ならびに利点を一層明らかにするた
め、以下に本発明の一実施例について説明を行う。(Example) In order to further clarify the main features and advantages of the present invention, an example of the present invention will be described below.
第１図に示すように、この実施例はＧａＡｓ基板結晶１
上ＫＭＢＫ、ＭＯＣＶＤ、ＬＰＦｉなど周知の方法によ
って、バッファ層２、下部クラッド層３、隔壁層４、量
子井戸層５、上部クラッド層６を構成してあり、いずれ
も基板結晶１と格子整合の関係にある１ＧａＩｎＰ層を
逐次成長せしめてなる。さらに０４８１μｍ光の閉じ込
めと１．０６μｍ光の有効な発振を可能ならしめるため
に、端面の一方に完全反射性の被膜７を、他方の端面に
０．８１μｍ光に対して反射性であり１．０６μｍ光に
対して部分的に透過性である被膜８を付着した構造にし
である。各層のエネルギーバンド幅の関係は第２図に示
した如く、ＧａＡθからなるクラッド層３゜６において
もつとも大であり、Ａ４Ｇａ工ｎｐからなる隔壁層４、
量子井戸層５の順に低くなる。量子井戸層５のバンド幅
は、励起子による０、８１μｍのレーザ発振を可能なら
しめるため、これより若干小さめであることが必要であ
る。クラッド層はＮｄを含有せしめる必要がある反面基
板結晶ｌと格子整合条件を満たしている必要があるから
、結晶製作条件を試行錯誤的に繰り返し決定する必要が
ある。Ｎｃｌイオンのエネルギー準位の主要部は第２図
に示すごとく、基底状態１４と第１乃至第３励起状態（
それぞれ１５乃至１７）からなり、０．８１μｍ光の吸
収によって励起１８が行われ、周知のように、第２励起
状態から第１励起状態への遷移１９によって１．０６μ
ｍの発光が行われる。As shown in FIG. 1, this embodiment has a GaAs substrate crystal 1
A buffer layer 2, a lower cladding layer 3, a partition layer 4, a quantum well layer 5, and an upper cladding layer 6 are formed by well-known methods such as upper KMBK, MOCVD, and LPFi, all of which have a lattice matching relationship with the substrate crystal 1. The 1GaInP layer is grown sequentially. Furthermore, in order to enable confinement of 0481 μm light and effective oscillation of 1.06 μm light, a completely reflective coating 7 is provided on one end face, and a coating 7 that is reflective for 0.81 μm light is provided on the other end face. The structure is coated with a coating 8 that is partially transparent to 0.6 μm light. As shown in FIG. 2, the relationship between the energy band widths of each layer is the highest for the 3°6 cladding layer made of GaAθ, and for the partition layer 4 made of A4GaNp,
The quantum well layer 5 becomes lower in order. The bandwidth of the quantum well layer 5 needs to be slightly smaller than this in order to enable laser oscillation of 0.81 μm due to excitons. Since the cladding layer needs to contain Nd and satisfy lattice matching conditions with the substrate crystal l, it is necessary to repeatedly determine the crystal manufacturing conditions by trial and error. As shown in Figure 2, the main energy levels of Ncl ions are the ground state 14 and the first to third excited states (
15 to 17), and excitation 18 is performed by absorption of 0.81 μm light, and as is well known, 1.06 μm is caused by transition 19 from the second excited state to the first excited state.
m light emission is performed.
かかるレーザの外部にＱスイッチあるいはモード・ロッ
カなどの諸装置を付加することにより、超短パルス発生
などを有効に実現し得ることはいうまでもない。本実施
例においては、ＧａＡｓ＋結晶上にＡ４０ｇ工ｎＰ混晶
を成長させた場合について説明を行ったが、同様な効果
はＧａＡθ結晶上にＡＩＧａＡθ混晶を形成することに
よっても実現可能である。It goes without saying that by adding various devices such as a Q switch or a mode rocker to the outside of such a laser, generation of ultrashort pulses can be effectively realized. In this embodiment, a case has been described in which an A40g-nP mixed crystal is grown on a GaAs+ crystal, but a similar effect can also be achieved by forming an AIGaAθ mixed crystal on a GaAθ crystal.
また量子井戸が１個の場合でも光閉じ込め層にＮ（１の
ドーピングを行うことにより同様な効果を得ることがで
きる。Further, even when there is only one quantum well, the same effect can be obtained by doping the optical confinement layer with N (1).
（発明の効果）
かかる構成をもつ本発明の半導体レーザ励起固体レーザ
は、従来にない、小型で結合効率が高く、かつ調整の容
易な固体レーザである。(Effects of the Invention) The semiconductor laser-excited solid-state laser of the present invention having such a configuration is an unprecedented solid-state laser that is small, has high coupling efficiency, and is easy to adjust.
第１図は本発明にかかわる半導体レーザ励起固体レーザ
の構成の概念図、第２図は第１図実施例の半導体レーザ
励起固体レーザのエネルギー状態の説明図である。
１・・・ＧａＡ３基板結晶、２・・−ＧａＡｓバッファ
層、３ 、、、 ＡＩＧａＩｎＰ下部クラッド層、４−
ｉＧａ工ｎＰ隔壁層、５・・・ＡｎＧａＩｎＰ量子井戸
層、６・・・ＡｊＧａＩｎＰ上部クラッド層、７・・・
完全反射性被膜、８・・・部分反射性被膜、１４・・・
Ｎｄイオ／基底状態、１５・・・Ｎｄ第１励起状態、１
６・・・Ｎｄ第２励起状態、１７・・・Ｎｄ第３励起状
態、１８・・・励起に対応する遷移、１９・・・発光に
対応する遷移。
代理人 弁理士 本 庄 伸 介
を全反射橿辰
第１図
１８ｊ４Ｊｚ−ヤたイル走杼
１９４、ｔ、Ｇλず叱む差峰
第２図FIG. 1 is a conceptual diagram of the configuration of a semiconductor laser pumped solid-state laser according to the present invention, and FIG. 2 is an explanatory diagram of the energy state of the semiconductor laser pumped solid-state laser of the embodiment shown in FIG. 1...GaA3 substrate crystal, 2...-GaAs buffer layer, 3, ..., AIGaInP lower cladding layer, 4-
iGa-nP barrier layer, 5... AnGaInP quantum well layer, 6... AjGaInP upper cladding layer, 7...
Completely reflective coating, 8... Partially reflective coating, 14...
Nd io/ground state, 15...Nd first excited state, 1
6... Nd second excited state, 17... Nd third excited state, 18... Transition corresponding to excitation, 19... Transition corresponding to light emission. The agent, patent attorney Shinsuke Honjo, was totally reflected on the 1st figure 18j4Jz-Yatairu Shuttle 194, t, Gλ, scolding the difference peak 2nd figure
Claims (1)
ｄイオンを含有する固体を発振源とする固体レーザにお
いて、該半導体レーザが１個以上の０．８１μｍの発振
波長を有する量子井戸構造の活性層を有し、該量子井戸
を隔てる隔壁領域に１モル％以上のＮｄを含有し、前記
量子井戸領域および隔壁領域ならびにクラッド層が基板
結晶と同一の格子常数を有し、発振部の両端面に０．８
１μｍ光に対して完全に反射性であり１．０６μｍに対
して部分的に透過性である被膜を有する半導体レーザ励
起固体レーザ。The excitation source is a semiconductor laser that oscillates by current excitation, and the N
In a solid-state laser that uses a solid state containing d ions as an oscillation source, the semiconductor laser has one or more active layers with a quantum well structure having an oscillation wavelength of 0.81 μm, and a partition wall region separating the quantum wells has one or more active layers. Nd of mol % or more is contained, the quantum well region, the partition wall region, and the cladding layer have the same lattice constant as the substrate crystal, and 0.8
A semiconductor laser pumped solid state laser having a coating that is fully reflective to 1 μm light and partially transparent to 1.06 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8034386A JPH0654819B2 (en) | 1986-04-08 | 1986-04-08 | Semiconductor laser pumped solid-state laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8034386A JPH0654819B2 (en) | 1986-04-08 | 1986-04-08 | Semiconductor laser pumped solid-state laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62237784A true JPS62237784A (en) | 1987-10-17 |
| JPH0654819B2 JPH0654819B2 (en) | 1994-07-20 |
Family
ID=13715609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8034386A Expired - Lifetime JPH0654819B2 (en) | 1986-04-08 | 1986-04-08 | Semiconductor laser pumped solid-state laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0654819B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282488A (en) * | 1988-05-10 | 1989-11-14 | Asahi Glass Co Ltd | Optical fiber sensor |
| JPH03227092A (en) * | 1990-01-31 | 1991-10-08 | Nec Corp | Semiconductor laser |
| US5369661A (en) * | 1991-02-07 | 1994-11-29 | Nippon Steel Corporation | Semiconductor laser-pumped solid state laser system and optical coupling system coupling semiconductor laser with optical fiber |
| JP2002208730A (en) * | 2001-01-09 | 2002-07-26 | Toyoda Gosei Co Ltd | Iii nitride based compound semiconductor light emitting element |
-
1986
- 1986-04-08 JP JP8034386A patent/JPH0654819B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282488A (en) * | 1988-05-10 | 1989-11-14 | Asahi Glass Co Ltd | Optical fiber sensor |
| JPH03227092A (en) * | 1990-01-31 | 1991-10-08 | Nec Corp | Semiconductor laser |
| US5369661A (en) * | 1991-02-07 | 1994-11-29 | Nippon Steel Corporation | Semiconductor laser-pumped solid state laser system and optical coupling system coupling semiconductor laser with optical fiber |
| JP2002208730A (en) * | 2001-01-09 | 2002-07-26 | Toyoda Gosei Co Ltd | Iii nitride based compound semiconductor light emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0654819B2 (en) | 1994-07-20 |
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