JPS62235735A - Organic film coating device - Google Patents
Organic film coating deviceInfo
- Publication number
- JPS62235735A JPS62235735A JP8051186A JP8051186A JPS62235735A JP S62235735 A JPS62235735 A JP S62235735A JP 8051186 A JP8051186 A JP 8051186A JP 8051186 A JP8051186 A JP 8051186A JP S62235735 A JPS62235735 A JP S62235735A
- Authority
- JP
- Japan
- Prior art keywords
- organic film
- disc
- semiconductor substrate
- coated
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007888 film coating Substances 0.000 title claims 3
- 238000009501 film coating Methods 0.000 title claims 3
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000004528 spin coating Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 abstract description 28
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 5
- 239000000498 cooling water Substances 0.000 abstract description 5
- 239000003795 chemical substances by application Substances 0.000 abstract description 4
- 239000004519 grease Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 230000003749 cleanliness Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造装置に関し、特に有機膜回転塗布装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to an organic film spin coating equipment.
従来、この種の装置としては、機能としてただ単に有機
膜を回転塗布するものであり、有機膜塗布前後に必要な
熱処理としては、別の装置を使用していた。たとえば熱
処理用炉や、半導体基板をベルトで搬送し、その搬送中
に赤外線などで熱処理するものである。Conventionally, this type of apparatus has merely had the function of spin-coating an organic film, and a separate apparatus has been used for heat treatment required before and after applying the organic film. For example, a heat treatment furnace is used, or a semiconductor substrate is transported by a belt, and heat treatment is performed using infrared rays or the like while the semiconductor substrate is being transported.
一般に半導体基板上に有機膜を塗布する際、半導体基板
と有機膜の密着性を向上させるために半導体基板表面の
水分を除去しておく必要がある。Generally, when applying an organic film onto a semiconductor substrate, it is necessary to remove moisture from the surface of the semiconductor substrate in order to improve the adhesion between the semiconductor substrate and the organic film.
そのため、基板上に有機剤を滴下し回転塗布する前に基
板を２０８℃程度に加熱している。また有機膜の回転塗
布後は有機剤中に含まれる溶剤を除去するため、半導体
基板を加熱し、溶剤を蒸発させる必要がある。Therefore, the substrate is heated to about 208° C. before the organic agent is dropped onto the substrate and spin-coated. Furthermore, after spin-coating the organic film, in order to remove the solvent contained in the organic agent, it is necessary to heat the semiconductor substrate to evaporate the solvent.
前述の機能としてただ単に有機膜を回転塗布する装置の
みでは上述の加熱工程を行うために回転塗布装置とは別
に加熱装置が必要であった。そのため加熱装置から回転
塗布装置へ半導体基板を移動しなければならずその移動
中に半導体基板上にゴミが付着する確率が高くなり、歩
留り低下の一因となる。また、加熱装置は水分蒸発また
は溶剤蒸発のためであるから１０分〜３０分程度必要で
あり、従って加熱用ベルトを用いると２ｍ程度の長さを
必要とする。それだけ清浄度を保つ床面積が必要となシ
、その維持管理費またフロア−の効率活用に不利となる
。さらにまた、回転塗布前の加熱処理後、時間の経過と
ともに有機膜と基板との密着性が劣化するため加熱処理
後はすみやかに回転塗布する必要がある。従って加熱後
、別の装置である回転塗布装置に移すことは、密着性を
劣化していることになる。If the above-mentioned function was to simply spin-coat an organic film, a heating device would be required in addition to the spin-coating device to carry out the above-mentioned heating process. Therefore, the semiconductor substrate must be moved from the heating device to the spin coating device, and during the movement, there is a high probability that dust will adhere to the semiconductor substrate, which becomes a cause of a decrease in yield. Further, since the heating device is used for water evaporation or solvent evaporation, it takes about 10 to 30 minutes, and therefore, if a heating belt is used, it requires a length of about 2 m. This requires more floor space to maintain cleanliness, which is disadvantageous in terms of maintenance costs and efficient use of the floor. Furthermore, since the adhesion between the organic film and the substrate deteriorates over time after heat treatment before spin coating, it is necessary to quickly spin coat after heat treatment. Therefore, transferring the coating to a separate spin coating device after heating will degrade the adhesion.
本発明の回転塗布装置は、有機剤を滴下し、その回転塗
布と塗布された有機膜の熱処理を同一装置で行なうため
、塗布装置内に加熱機能と冷却機能を設けたものである
。The spin coating device of the present invention is equipped with a heating function and a cooling function in the coating device so that the organic agent is dropped and the spin coating and heat treatment of the applied organic film are performed in the same device.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の図面である。まず円板１０
１上に半導体基板を乗せ、それを保持するため真空１０
２を中心部からとり、さらに円板１０１の表面に開口１
０４に通す。これによって円板１０１上に乗せた半導体
基板は真空によって保持され円板１０１の回転によって
離脱することはない。次に赤外線ヒータ１０５を円板１
０１上に設は電極１０６に接続されている。さらに円板
１０１上の半導体基板に均一に加熱されるよう反射鏡１
０７を加熱ヒーター１０５の上に設置する。FIG. 1 is a drawing of one embodiment of the present invention. First, disk 10
A semiconductor substrate is placed on 1, and a vacuum 10 is applied to hold it.
2 from the center, and then make an opening 1 on the surface of the disk 101.
Pass it to 04. As a result, the semiconductor substrate placed on the disk 101 is held by the vacuum and does not come off due to the rotation of the disk 101. Next, the infrared heater 105 is connected to the disk 1.
01 is connected to an electrode 106. Furthermore, the reflector 1 is heated so that the semiconductor substrate on the disk 101 is heated uniformly.
07 is placed on top of the heater 105.
尚加熱用ヒーター１０５は２００℃程度まで温度を上昇
させるため複数本使用しても良い。本実施例では４本用
意し塗布前加熱は２００℃とするため４本通電させ、塗
布後加熱は１２０℃とし２本通電した。Note that a plurality of heating heaters 105 may be used to raise the temperature to about 200°C. In this example, four tubes were prepared, and the pre-coating heating was 200° C., so four of them were energized, and the post-coating heating was 120° C., and two were energized.
加熱用ヒーター１０５によって加熱された円板１０１は
その比熱のため、瞬時に冷却させるためには、冷却機能
を必要とする。そのため同じ円状に作成した三層管１０
８の外側の２つに冷却用水を流せるようにした。すなわ
ち、冷却水を供給する管１０９から冷却水を供給し排出
管１１０から排出する。この冷却装置によって塗布前後
に加熱された半導体基板を有機膜塗布時、また処理後基
板をはずすときすみやかに冷却することができる。Due to its specific heat, the disk 101 heated by the heating heater 105 requires a cooling function in order to be instantly cooled. Therefore, the three-layer pipe 10 made in the same circular shape
Cooling water can flow through the two outside of the 8. That is, cooling water is supplied from the cooling water supply pipe 109 and discharged from the discharge pipe 110. With this cooling device, a semiconductor substrate heated before and after coating can be quickly cooled down when applying an organic film or when removing the substrate after processing.
尚、モーターと直結させている回転軸１１１は円板１０
１と一体となっている軸１０８とはめ込むことによって
連結され連結部１１２はグリースなどによって密封され
ているこの構造をとることによりてモーターが回転すれ
ば支障なく円板１０１を回転することができる。Note that the rotating shaft 111 directly connected to the motor is a disc 10.
With this structure, in which the connecting portion 112 is connected by fitting into the shaft 108 that is integrated with the disk 108 and is sealed with grease or the like, the disk 101 can be rotated without any problem when the motor rotates.
以上説明したように本発明は回転塗布装置と加熱装置を
一体としたことＫより、まず加熱後、ただちに回軸塗布
が可能となり、半導体基板と有機膜との密着性を格段に
同上をさせることができる。As explained above, since the present invention integrates a spin coating device and a heating device, first, after heating, spin coating can be performed immediately, and the adhesion between the semiconductor substrate and the organic film can be significantly improved. I can do it.
また前述したように加熱装置が一体となっているため、
従来のように加熱装置を必要とせず清浄度の高いフロア
−の面積を節約できる。さらに従来のように加熱装置か
ら回転塗布装置へ、また回転塗布装置から加熱装置へと
半導体基板を移動する際発生または付着するゴミの確率
を少なくでき、歩留り向上が期待できる。Also, as mentioned above, since the heating device is integrated,
Unlike conventional heating devices, this does not require a heating device and saves floor area with high cleanliness. Furthermore, unlike the conventional method, when a semiconductor substrate is transferred from a heating device to a spin coating device, or from a spin coating device to a heating device, the probability of dust being generated or attached can be reduced, and an improvement in yield can be expected.
尚、本実施例では加熱用に赤外線ヒーターを使用したが
他の加熱法、たとえばマイクロ波などでも同様の効果を
得る。In this embodiment, an infrared heater is used for heating, but other heating methods such as microwaves can also be used to obtain similar effects.
第１図は本発明の詳細な説明するための断面図である。
１０１−・・・・円板、１０２，１０３−・・・・・真
空配管、１０５・・・・・・赤外線ヒーター、１０７・
・・・・・反射鏡、１０９．１１０・−・・・・冷却水
配管。
易
ｆ 閃FIG. 1 is a sectional view for explaining the present invention in detail. 101-... Disc, 102, 103-... Vacuum piping, 105... Infrared heater, 107.
...Reflector, 109.110...Cooling water piping. easy f flash
Claims (2)
、該基板を保持し回転する円板を間接的に加熱すること
を特徴とする有機膜塗布装置。(1) An organic film coating apparatus for spin-coating an organic film onto a semiconductor substrate, which indirectly heats a rotating disc that holds the substrate.
請求の範囲第（１）項記載の有機膜塗布装置。(2) The organic film coating apparatus according to claim (1), wherein the rotating disk can be cooled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8051186A JPS62235735A (en) | 1986-04-07 | 1986-04-07 | Organic film coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8051186A JPS62235735A (en) | 1986-04-07 | 1986-04-07 | Organic film coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62235735A true JPS62235735A (en) | 1987-10-15 |
Family
ID=13720339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8051186A Pending JPS62235735A (en) | 1986-04-07 | 1986-04-07 | Organic film coating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62235735A (en) |
-
1986
- 1986-04-07 JP JP8051186A patent/JPS62235735A/en active Pending
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