JPS62235588A - Manufacture of x ray detector - Google Patents
Manufacture of x ray detectorInfo
- Publication number
- JPS62235588A JPS62235588A JP61078986A JP7898686A JPS62235588A JP S62235588 A JPS62235588 A JP S62235588A JP 61078986 A JP61078986 A JP 61078986A JP 7898686 A JP7898686 A JP 7898686A JP S62235588 A JPS62235588 A JP S62235588A
- Authority
- JP
- Japan
- Prior art keywords
- scintillator
- photodiode
- electrode
- channel
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000007787 solid Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 4
- 238000000605 extraction Methods 0.000 claims description 14
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 1
- 238000003491 array Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明はＸ線検出器の製造法、主としてＸ線ＣＴ用検出
器の実装方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a method for manufacturing an X-ray detector, and mainly relates to a method for mounting a detector for X-ray CT.
（従来の技術）
放射線検出器がＸ線源と共に被検体の回りを回転する第
３世代のＸＩＩＣＴ装置において、従来用いられている
Ｘｅガス検出器に替わるものとして、固体シンチレータ
に、水素化アモルファスシリコン（以下ａ−３ｉ：Ｈと
もいう）を用いたフォトダイオードを付加したものが考
えられる。この検出器の作動原理は、Ｘ線信号を固体シ
ンチレータにより、光信丹に変換し、その信号をシンチ
レータに接着されたａ−３ｉフォトダイオードによって
、電気信号に変換し、これを検出するものである。この
種の検出器は固体シンチレータを用いることにより、検
出器の大きざを小型化することができ、ざらにａ−８ｉ
フオトダイオードを用いることにより、製造コストを低
減できるという利点がある。(Prior Art) In the third generation XIICT device in which the radiation detector rotates around the subject together with the X-ray source, hydrogenated amorphous silicon is used as a solid scintillator to replace the conventionally used Xe gas detector. (hereinafter also referred to as a-3i:H) may be added with a photodiode. The operating principle of this detector is to convert an X-ray signal into optical radiation using a solid-state scintillator, convert the signal into an electrical signal using an A-3I photodiode bonded to the scintillator, and detect this signal. . This type of detector uses a solid scintillator, making it possible to reduce the size of the detector, making it roughly a-8i
The use of photodiodes has the advantage of reducing manufacturing costs.
（発明が解決しようとする問題点）
ところが以上のような検出器は複数チャンネル分のａ−
３ｉフォトダイオードを固体シンチレータに実装するに
あたり、１チヤンネル毎に実装するのでは製造プロセス
が複雑になるという問題がある。(Problem to be solved by the invention) However, the above-mentioned detector has multiple channels of a-
When mounting a 3i photodiode on a solid-state scintillator, there is a problem in that the manufacturing process becomes complicated if the 3i photodiode is mounted channel by channel.
本発明の目的は固体シンチレータ上へのａ−３ｉフオト
ダイオードの実装法を簡略化し、製造プロセスを簡単な
ものにすることにある。It is an object of the present invention to simplify the mounting of an A-3I photodiode on a solid state scintillator and to simplify the manufacturing process.
［発明の構成］
（問題点を解決するための手段）
上記目的を達成するため本発明は、固体シン” チレ
ータ上にフォトダイオードアレーを複数チャンネル分同
時に作成した後、前記固体シンチレータを各チャンネル
毎に切断し、切断した固体シンチレータとコリメータと
を交互に積層することによりＸ線検出器を形成すること
にした。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention provides a method for simultaneously creating photodiode arrays for a plurality of channels on a solid-state scintillator, and then distributing the solid-state scintillator for each channel. It was decided to form an X-ray detector by cutting the solid scintillator and collimator into layers alternately.
（作 用）
本発明によれば固体シンチレータ上にフォトダイオード
アレーを複数チャンネル分同時に作成するので１チＶン
ネル毎に作成する場合に比べて、固体シンチレータ上に
フォトダイオードを実装するプロセスが著しく簡略化で
ある。(Function) According to the present invention, since photodiode arrays for multiple channels are simultaneously created on a solid-state scintillator, the process of mounting photodiodes on a solid-state scintillator is significantly simplified compared to the case where the photodiode array is created for each channel. It is.
（実施例）
以下、本発明の一実施例について図面を参照しながら説
明する。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図（ａ）〜（Ｃ）が製造プロセスを示す図、第２図
がフォトダイオードの断面図、第３図が完成したＣＴ用
Ｘ線検出器の図である。以下製造プロセスを順次説明す
る。1A to 1C are diagrams showing the manufacturing process, FIG. 2 is a cross-sectional view of a photodiode, and FIG. 3 is a diagram of a completed CT X-ray detector. The manufacturing process will be explained below.
（Ｉ＞本実施例では先ず検出器のチャンネル数にして数
十チャンネル分の面積をもつ直方体形状の″固体シンチ
レータ１．（例えばＣｄＷＯ４またはＧｄ２Ｏ２Ｓ：Ｐ
ｒ）のフォトダイオードを実装す・る面１ａを鏡面に研
磨する。(I> In this example, first, a "solid scintillator 1" in the shape of a rectangular parallelepiped (for example, CdWO4 or Gd2O2S:P
r) The surface 1a on which the photodiode is mounted is polished to a mirror surface.
（ｎ）次いでフォトダイオードを実装する面１ａの上側
及び下側に信号取り出し電極として、Ｃ・ｒ２．３を帯
状に真空蒸着法にて蒸着する（第１図（ａ）参照）。(n) Next, C.r2.3 is deposited in strips as signal extraction electrodes on the upper and lower sides of the surface 1a on which the photodiode is mounted by vacuum evaporation (see FIG. 1(a)).
（ＩＩＩ）次いで、一方の電極２に一部重なるように、
また他方の電極３には重ならないように透明電極４をス
パッタリング法により固体シンチレータ１の鏡面研磨面
１ａ全而に例えば１０００Ａの厚さで着膜する（第１図
（ａ＞参照）。透明電極４の材料としては、例えば酸化
インジウム錫（ＩＴＯ）が用いられる。(III) Then, so as to partially overlap one electrode 2,
In addition, a transparent electrode 4 is deposited to a thickness of, for example, 1000A on the entire mirror-polished surface 1a of the solid scintillator 1 by sputtering without overlapping the other electrode 3 (see FIG. 1 (a)).Transparent electrode As the material 4, for example, indium tin oxide (ITO) is used.
（ＩＶ）次いで、ａ−３ｉ：Ｈ膜５，６を透明電極４上
に透明電極４の信号引き出し電極２と重なっていない方
のエツジ４ａを被覆するようにプラズマＣＶＤにて着膜
する（第１図（ａ）参照） 。ａ−３ｉ：Ｈ膜５．６の
構造は、例えば１μｍの１層５上に１００ＯＡの１層６
が付着したものである。１層６はその上に蒸着する金属
電極７との間でオーミック接触が得られれば省いてもよ
い。このとき、透明電極４とａ−３ｉ ：Ｈ膜５の界面
はショットキー障壁を形成するようにする。ａ−３ｉ：
Ｈ膜５，６の原料としては、ｉ層を形成する時はＳ ｉ
Ｈ４を、ｈ層を形成するときはＳ ｉ Ｈａと数％の
ＰＨ３とを用いる。(IV) Next, the a-3i:H films 5 and 6 are deposited on the transparent electrode 4 by plasma CVD so as to cover the edge 4a of the transparent electrode 4 that does not overlap with the signal extraction electrode 2. (See Figure 1 (a)). The structure of the a-3i:H film 5.6 is, for example, one layer 6 of 100 OA on one layer 5 of 1 μm.
is attached. The first layer 6 may be omitted if ohmic contact can be obtained with the metal electrode 7 deposited thereon. At this time, the interface between the transparent electrode 4 and the a-3i:H film 5 is made to form a Schottky barrier. a-3i:
As the raw material for the H films 5 and 6, when forming the i layer, Si
H4 is used, and when forming the h layer, S i Ha and several percent of PH3 are used.
（Ｖ ） ａ−３ｉ ：Ｈ膜５，６上に真空蒸着法によ
り金属７、例えばＭＯを蒸着する。金属７の一方の端７
ａは信号取り出し用の帯状電極３と重なるようにし、そ
の他のエツジはすべてａ−３ｉ：Ｈ膜５，６上にあるよ
うにする（第１図（ａ＞参照）。(V) a-3i: A metal 7, such as MO, is deposited on the H films 5 and 6 by vacuum deposition. One end 7 of metal 7
The edge a is made to overlap the band-shaped electrode 3 for signal extraction, and all other edges are made to be on the a-3i:H films 5 and 6 (see FIG. 1 (a>)).
（１次いで、金属７上にフォトリソグラフィーにより、
シンチレータのパターン８を数十チャンネル分、フォト
レジストにて描画する。(1) Then, by photolithography on the metal 7,
A scintillator pattern 8 for several tens of channels is drawn using photoresist.
（■）次いで、ドライエツチング法または湿式エツチン
グ法にて金属７及びａ−３ｉ：Ｈ膜の１層６を経て１層
５までエツチングを行った後にレジストを剥離し、各チ
ャンネルのフォトダイオードのパターン８が完成する（
第１図（ｂ）図参照、図では６チＶンネル分のみ図示）
。(■) Next, the metal 7 and the a-3i:H film are etched through the first layer 6 to the first layer 5 using a dry etching method or a wet etching method, and then the resist is peeled off and the photodiode pattern of each channel is formed. 8 is completed (
(See Figure 1(b), only 6 channels are shown in the figure)
.
（■）次いでフォトダイオードが実装された固体シンチ
レータ１を各チャンネルごとに切断し、バラバラにする
。(■) Next, the solid scintillator 1 with photodiodes mounted thereon is cut into individual channels and separated into pieces.
（ＩＸ）次いで切断されたシンチレータ１に光の反射剤
９を塗布する（第２図参照）。(IX) Next, a light reflecting agent 9 is applied to the cut scintillator 1 (see FIG. 2).
（Ｘ）フォトダイオード８の実装されたシンチレータ１
とコリメータ（Ｐｂ板）１０とを交互に重ね合せ、Ｘ線
ＣＴ用検出器として必要なチャンネル数（例えば５１２
チヤンネル）並べて接着する（第１図（Ｃ）参照）。(X) Scintillator 1 with photodiode 8 mounted
and collimators (Pb plates) 10 are stacked alternately, and the number of channels required for an X-ray CT detector (for example, 512
channel) and adhere them side by side (see Figure 1(C)).
（ＸＩ）フォトダイオード８の表面に光の反射剤９を塗
布した後、フォトダイオード部分を樹脂１１でモールド
する。この時信号取り出し電極２，３は表面に現れるよ
うにする（第２図参照）。(XI) After applying a light reflecting agent 9 to the surface of the photodiode 8, the photodiode portion is molded with resin 11. At this time, the signal extraction electrodes 2 and 3 are made to appear on the surface (see FIG. 2).
（ＸＩＩ）第３図に示すように検出器の上下を、各チャ
ンネル毎に信号引き出し電極１５ａ、１５ｂのついて断
面り字形の補助板１２ａ、１２ｂで挟み固定する。フォ
トダイオード８の信号取り出し電極２，３（第３図では
３のみ可視）と補助板１２ａ、１２ｂの信号引き出し電
極１５ａ、１５ｂの両方にまたがるように導電性ゴムコ
ネクター１３ａ、１３ｂを圧着し、圧着板を兼ねた絶縁
体でできているカバー１４で押えつけて固定する。以上
でＣＴ用Ｘ線検出器が完成する。尚、導電性ゴムコネク
ター１３ａ、１３ｂは第４図に示すように、電導部１６
と、電導部１６の間に介装された厚みｔが数十〜百μｍ
の絶縁部１７とからなるものである。(XII) As shown in FIG. 3, the upper and lower sides of the detector are sandwiched and fixed between auxiliary plates 12a and 12b each having signal extraction electrodes 15a and 15b for each channel and each having a rectangular cross section. Conductive rubber connectors 13a and 13b are crimped so as to span both the signal extraction electrodes 2 and 3 of the photodiode 8 (only 3 is visible in FIG. 3) and the signal extraction electrodes 15a and 15b of the auxiliary plates 12a and 12b. It is held down and fixed with a cover 14 made of an insulator that also serves as a plate. With the above steps, the CT X-ray detector is completed. Incidentally, the conductive rubber connectors 13a and 13b are connected to the conductive portion 16 as shown in FIG.
and the thickness t interposed between the conductive portion 16 is several tens to one hundred μm.
It consists of an insulating section 17.
以上のような実施例は作用効果を奏する。The embodiments described above have effects.
（イ）固体シンチレータ１上に７オトダイオードアレー
８を多チャンネル分同時に作成するので、１チヤンネル
毎に作成する場合に比べて、固体シンチレータ上にフォ
トダイオードを実装するプロセスが著しく簡略化できる
。(a) Since seven photodiode arrays 8 are simultaneously created for multiple channels on the solid scintillator 1, the process of mounting photodiodes on the solid scintillator can be significantly simplified compared to the case where they are created one channel at a time.
（ロ）リード線の引き出しは、従来のようなワイヤーポ
ンディグを用いず、導電性ゴムコネクターを用いている
ので、構造が簡略化される。(b) The structure is simplified because a conductive rubber connector is used to draw out the lead wire, instead of using a conventional wire bonding device.
Ｃ＼）したがって製造コストの低減が図られ、また耐久
性が増加し、信頼性が向上する。C\) Therefore, manufacturing costs are reduced, durability is increased, and reliability is improved.
以上本発明の一実施例について説明したが、本発明は上
記実施例に限定されるものではなく、本発明の要旨の範
囲内で適宜に変形実施可能でおることはいうまでもない
。Although one embodiment of the present invention has been described above, it goes without saying that the present invention is not limited to the above embodiment, and can be modified as appropriate within the scope of the gist of the present invention.
例えばフォトダイオードの信号取り出し電極２゜３の材
料としてはＣｒに限られるものではない。For example, the material for the signal extraction electrode 2.3 of the photodiode is not limited to Cr.
またフォトダイオード８の金薦電極７についてもＭＯに
限られるものではなく、ａ−８ｉ：ｔｌ膜とオーミック
接触がとれ、エツチングされやすい金属ならば何でもよ
い。Further, the gold electrode 7 of the photodiode 8 is not limited to MO, but any metal may be used as long as it can make ohmic contact with the a-8i:tl film and is easily etched.
［発明の効果］
以上詳述したように本発明によれば、固体シンチレータ
上にａ−Ｓｉ：Ｈフォトダイオードを実装するプロセス
が１チヤンネル毎に作成する方法と比較して非常に簡略
化される。[Effects of the Invention] As detailed above, according to the present invention, the process of mounting an a-Si:H photodiode on a solid-state scintillator is greatly simplified compared to the method of manufacturing each channel. .
第１図（ａ）〜（Ｃ）はそれぞれ本発明に係るＸ線検出
器の製造法を示す図であり、同図（ａ）図はシンチレー
タ上にフォトダイオードを形成した部分切欠平面図、同
図（ｂ）図はシンチレータを各チャンネルに分離した状
態の斜視図、同図（Ｃ）図は各チＶンネルに切断後コリ
メータを挟み、多数チャンネルを接着した状態の斜視図
、第２図はフォトダイオードが実装されたシンチレータ
の断面図、第３図は本発明に係るＸ線ＣＴ用検出器の部
分切欠斜視図１．第４図は導電性ゴムコネクターの斜視
図である。
１・・・固体シンチレータ、
２．３・・・フォトダイオードの信号取り出し電極、４
・・・透明電極、 ５−ａ−３ｉ ：Ｈ膜ｉ層、６
−５−ａ−３ｉ ：Ｈ膜り層、 ７・・・金Ｒ電極、８
・・・フォトダイオードのパターン、９・・・光の反射
剤、 １０・・・コリメータ、１１・・・樹脂、
１２ａ、１２ｂ・・・信号引き出し用補助板、１３ａ、
１３ｂ・・・導電性ゴムコネクター、１４・・・ゴムコ
ネクター圧着板、
１５ａ、１５ｂ・・・信号引き出し電極。FIGS. 1(a) to 1(C) are diagrams each showing a method of manufacturing an X-ray detector according to the present invention, and FIG. 1(a) is a partially cutaway plan view showing a photodiode formed on a scintillator, and FIG. Figure (b) is a perspective view of the scintillator separated into each channel, Figure (C) is a perspective view of the scintillator with a collimator sandwiched between each channel after cutting, and multiple channels are glued together. FIG. 3 is a cross-sectional view of a scintillator on which a photodiode is mounted, and FIG. 3 is a partially cutaway perspective view of an X-ray CT detector according to the present invention. FIG. 4 is a perspective view of the conductive rubber connector. 1... Solid scintillator, 2.3... Signal extraction electrode of photodiode, 4
...transparent electrode, 5-a-3i: H film i layer, 6
-5-a-3i: H film layer, 7... Gold R electrode, 8
... Photodiode pattern, 9... Light reflector, 10... Collimator, 11... Resin, 12a, 12b... Auxiliary plate for signal extraction, 13a,
13b... Conductive rubber connector, 14... Rubber connector crimp plate, 15a, 15b... Signal extraction electrode.
Claims (2)
ダイオードを実装したＸ線検出器を製造するに際し、固
体シンチレータ上にフォトダイオードアレイを複数チャ
ンネル分同時に作成した後、前記固体シンチレータを各
チャンネル毎に切断し、切断した固体シンチレータとコ
リメータとを交互に積層することによりＸ線検出器を形
成することを特徴とするＸ線検出器の製造方法。(1) When manufacturing an X-ray detector in which an amorphous silicon photodiode is mounted on a solid scintillator, a photodiode array for multiple channels is simultaneously created on the solid scintillator, and then the solid scintillator is cut into individual channels. 1. A method of manufacturing an X-ray detector, comprising forming the X-ray detector by alternately stacking a solid scintillator and a collimator.
て、フォトダイオードの信号取り出し電極と、前記積層
体の側部に配した補助基板の信号引き出し電極との間に
導電性ゴムコネクターを介在させて接続した特許請求の
範囲第１項記載のＸ線検出器の製造方法。(2) As a signal extraction method from the photodiode, a conductive rubber connector was interposed between the signal extraction electrode of the photodiode and the signal extraction electrode of the auxiliary board arranged on the side of the laminate. A method for manufacturing an X-ray detector according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61078986A JPS62235588A (en) | 1986-04-04 | 1986-04-04 | Manufacture of x ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61078986A JPS62235588A (en) | 1986-04-04 | 1986-04-04 | Manufacture of x ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62235588A true JPS62235588A (en) | 1987-10-15 |
Family
ID=13677215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61078986A Pending JPS62235588A (en) | 1986-04-04 | 1986-04-04 | Manufacture of x ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62235588A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4982096A (en) * | 1988-01-06 | 1991-01-01 | Hitachi Medical Corporation | Multi-element radiation detector |
| JP2002303676A (en) * | 2001-04-03 | 2002-10-18 | Matsushita Electric Ind Co Ltd | Radiation detecting element and method of manufacturing the same |
| CN102870007A (en) * | 2010-04-26 | 2013-01-09 | 皇家飞利浦电子股份有限公司 | X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such x-ray detector |
| CN108878572A (en) * | 2018-07-10 | 2018-11-23 | 京东方科技集团股份有限公司 | Photosensitive element, photoelectric sensing detection substrate and its manufacturing method |
-
1986
- 1986-04-04 JP JP61078986A patent/JPS62235588A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4982096A (en) * | 1988-01-06 | 1991-01-01 | Hitachi Medical Corporation | Multi-element radiation detector |
| JP2002303676A (en) * | 2001-04-03 | 2002-10-18 | Matsushita Electric Ind Co Ltd | Radiation detecting element and method of manufacturing the same |
| CN102870007A (en) * | 2010-04-26 | 2013-01-09 | 皇家飞利浦电子股份有限公司 | X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such x-ray detector |
| US20130037723A1 (en) * | 2010-04-26 | 2013-02-14 | Koninklijke Philips Electronics N.V. | X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such x-ray detector |
| US9995831B2 (en) * | 2010-04-26 | 2018-06-12 | Koninklijke Philips N.V. | X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such X-ray detector |
| CN108878572A (en) * | 2018-07-10 | 2018-11-23 | 京东方科技集团股份有限公司 | Photosensitive element, photoelectric sensing detection substrate and its manufacturing method |
| CN108878572B (en) * | 2018-07-10 | 2021-01-26 | 京东方科技集团股份有限公司 | Photosensitive element, photoelectric sensing detection substrate and manufacturing method thereof |
| US11296246B2 (en) | 2018-07-10 | 2022-04-05 | Boe Technology Group Co., Ltd. | Photosensitive component, detection substrate and method for manufacturing the same |
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