JPS6223438B2 - - Google Patents
Info
- Publication number
- JPS6223438B2 JPS6223438B2 JP54054386A JP5438679A JPS6223438B2 JP S6223438 B2 JPS6223438 B2 JP S6223438B2 JP 54054386 A JP54054386 A JP 54054386A JP 5438679 A JP5438679 A JP 5438679A JP S6223438 B2 JPS6223438 B2 JP S6223438B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- discharge lamp
- ceramic thick
- film resistor
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 2
- 230000020169 heat generation Effects 0.000 claims 2
- 230000006378 damage Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
Landscapes
- Circuit Arrangements For Discharge Lamps (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
Description
【発明の詳細な説明】
本発明は発光管と並列に始動回路を接続しこれ
らを外球内に収納した、始動回路内蔵型電圧電灯
の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a voltage electric lamp with a built-in starting circuit, in which a starting circuit is connected in parallel with an arc tube and these are housed within an outer bulb.
高圧放電灯、殊に高圧ナトリウムランプやメタ
ルハライドランプは始動高圧が高く、高圧水銀ラ
ンプに用いる安定器だけでは点灯することができ
ない。そのため安定器とは別に高電圧パルスを発
生させる始動回路を用いて放電灯を始動してい
る。斯る高圧放電灯は始動回路を放電灯に内蔵す
るか或いは放電灯外部に設けるかによつて２種類
に大別できる。 High-pressure discharge lamps, especially high-pressure sodium lamps and metal halide lamps, require high starting pressure and cannot be lit using only the ballast used for high-pressure mercury lamps. Therefore, in addition to the ballast, a starting circuit that generates a high voltage pulse is used to start the discharge lamp. Such high-pressure discharge lamps can be roughly divided into two types depending on whether the starting circuit is built into the discharge lamp or provided outside the discharge lamp.
始動回路を内蔵する放電灯は安定器を小型にで
き経済的である等の幾多の利点を有し、現に実用
化されている。かかる始動回路内蔵型高圧放電灯
の回路例を第１図に示す。第１図において始動す
べき発光管１がチヨークコイル安定器２を介して
交流電源３に接続される。発光管１と並列にバイ
メタルスイツチ４とフイラメント抵抗５を直列接
続した始動回路が設けられ、この始動回路と発光
管１は外球６内に収容される。 Discharge lamps with built-in starting circuits have many advantages, such as being economical as the ballast can be made smaller, and are now in practical use. A circuit example of such a high pressure discharge lamp with a built-in starting circuit is shown in FIG. In FIG. 1, an arc tube 1 to be started is connected to an AC power source 3 via a choke coil ballast 2. A starting circuit in which a bimetal switch 4 and a filament resistor 5 are connected in series is provided in parallel with the arc tube 1, and the starting circuit and the arc tube 1 are housed within the outer bulb 6.
第１図の回路の動作を簡単に述べると、電源３
の投入により常温では閉じている常閉接点式のバ
イメタルスイツチ４及びフイラメント抵抗５を通
して電流が流れる。この際、発光管１は交流電源
の印加電圧だけでは始動できないので電流は専ら
チヨークコイル安定器２より始動回路を通して流
れる。この電流（以下スイツチング電流と称す
る）は殆んどフイラメント抵抗の抵抗値によつて
定まるが、スイツチング電流が或る時間例えば数
秒流れるとフイラメント抵抗５が赤熱される。こ
の熱でバイメタルスイツチ４が開放され、スイツ
チング電流は遮断される。この瞬間に、チヨーク
コイル安定器２の両端に高電圧パルスが誘起さ
れ、これが電源電圧に重畳されて発光管１に印加
され、放電灯が始動点灯する。 To briefly describe the operation of the circuit shown in Figure 1, the power supply 3
When the switch is turned on, a current flows through the bimetal switch 4, which is a normally closed contact type that is closed at room temperature, and the filament resistor 5. At this time, since the arc tube 1 cannot be started only by the applied voltage of the AC power supply, the current flows exclusively from the chiyoke coil ballast 2 through the starting circuit. This current (hereinafter referred to as switching current) is determined mostly by the resistance value of the filament resistor, but when the switching current flows for a certain period of time, for example, several seconds, the filament resistor 5 becomes red hot. This heat opens the bimetal switch 4 and cuts off the switching current. At this moment, a high voltage pulse is induced across the chiyoke coil ballast 2, which is superimposed on the power supply voltage and applied to the arc tube 1, starting and lighting the discharge lamp.
叙上の始動回路に流れるスイツチング電流の電
流値は主として次のような要因を考慮して決定さ
れる。 The current value of the switching current flowing through the starting circuit described above is determined mainly by considering the following factors.
(イ) 放電灯を始動させるのに充分な平均パルス電
圧を発生するように大きくする必要がある。(b) It is necessary to increase the average pulse voltage enough to start the discharge lamp.
(ロ) ところが発生するパルス電圧が高過ぎると、
チヨークコイル安定器の損傷するのでその絶縁
耐圧を越えないように小さくする必要がある。(b) However, if the generated pulse voltage is too high,
Since this will damage the chiyoke coil ballast, it is necessary to make it small so as not to exceed its dielectric strength voltage.
上記の要因を考慮して決定されたスイツチング
電流は一般に約１〔Ａ〕であるが、先に述べたご
とくその値はフイラメント抵抗５の抵抗値を所定
の値にすることによつて設定される。フイラメン
ト抵抗５は前述の如く外球６内に収納されるが、
これを所定の抵抗値例えば200Ωとするためには
フイラメントの長さが相当長くなり、発光管１か
ら放射される光を実質的に遮蔽しないような位置
にしかもバイメタルスイツチ４と所定の位置関係
に配置しなければならない。その配置例として可
成りの長さのフイラメント抵抗をジグザグ状に張
架して発光管１の下端部附近にバイメタルスイツ
チと共に取付けられるものが挙げられる。ところ
が、フイラメント抵抗はどのような取付け方法を
とろうとも振動や機械的シヨツクに弱く、しかも
通電時に蒸発して外球の内部等に付着するためラ
ンプの信頼性を低下することになる。 The switching current determined in consideration of the above factors is generally about 1 [A], but as mentioned earlier, the value is set by setting the resistance value of the filament resistor 5 to a predetermined value. . The filament resistor 5 is housed within the outer sphere 6 as described above,
In order to set this to a predetermined resistance value, for example 200Ω, the length of the filament must be considerably long, and it must be placed in a position where it does not substantially block the light emitted from the arc tube 1, and in a predetermined positional relationship with the bimetal switch 4. must be placed. An example of such an arrangement is one in which a filament resistor of considerable length is stretched in a zigzag pattern and attached near the lower end of the arc tube 1 together with a bimetal switch. However, no matter how the filament resistor is attached, it is susceptible to vibration and mechanical shock, and furthermore, it evaporates when energized and adheres to the inside of the outer bulb, reducing the reliability of the lamp.
上記のような問題を解決するため特開昭53−
16475号に示すような放電灯が提案されている。
この放電灯では従来のフイラメント抵抗に代えて
酸化物皮膜抵抗のごとき固定抵抗を使用すると共
にバイメタルスイツチを加熱するための加熱フイ
ラメントを別途設け、電流制限機能と、バイメタ
ルスイツチの加熱機能を別々の素子に分担させる
ものである。 In order to solve the above problems, JP-A-53-
A discharge lamp as shown in No. 16475 has been proposed.
This discharge lamp uses a fixed resistor such as an oxide film resistor instead of a conventional filament resistor, and also has a separate heating filament for heating the bimetallic switch, so that the current limiting function and the heating function of the bimetallic switch are performed using separate elements. This will be shared by the following.
かかる構成においては、電流制限機能を固定抵
抗に負担させるため加熱フイラメントは小さいも
ので済むから耐振性は向上するが、固定抵抗は数
ワツトのものを使用しても寸法的には直径約10
mm、全長約60mm程度の大型のものとなるため外球
内部への組込みが難かしいだけでなく耐熱性も劣
るため、現在のところ実用化されていない。 In such a configuration, the current limiting function is borne by the fixed resistor, so the heating filament can be small, improving vibration resistance, but even if the fixed resistor is of several watts, the diameter is about 1
Because it is large, with a total length of approximately 60 mm, it is not only difficult to incorporate into the outer sphere, but also has poor heat resistance, so it has not been put into practical use at present.
発明者等は、かかる始動器内蔵型高圧放電灯に
使用する電流制限用の抵抗体について種々検討及
び実験を行つた結果、セラミツク厚膜抵抗体を使
用して良好な結果を得た。セラミツクにタングス
テンの如き厚膜抵抗を介在させてセラミツク厚膜
抵抗体は、本来IC基盤やヒーター等に使われて
きたものである。耐振性、耐熱性があるうえに比
較的コンパクトに成形できるから、前記のごとき
始動器内蔵型高圧放電灯の電流制限用抵抗体とし
て利用することも考えられないことではなかつた
が、これを実際に使用しようとすると次のような
寸法上の問題及び熱的問題を解決しなければなら
なかつた。寸法上の問題は始動回路のスイツチン
グ電流との関係でセラミツク厚膜抵抗体の温度が
上昇しても破壊しないように安全を見込んで使用
すると、抵抗体の寸法が極めて大きくなり放電灯
に組み込むことが困難になることである。一般に
セラミツク厚膜抵抗体は10W／cm2以下の表面負荷
（抵抗負荷を表面積で除した値）殊に5W／cm2程度
の表面負荷で使用するのが安全とされているが、
始動回路のスイツチング電流を約1Aとした場
合、表面負荷を上記の値にしようとすると抵抗体
は大型になり放電灯に組み込むことはできなくな
る。そこで、抵抗体の寸法を放電灯に組込可能な
程度に小さくすると温度上昇により抵抗が破壊す
るという熱問題題を生ずる。 The inventors conducted various studies and experiments on current-limiting resistors used in such high-pressure discharge lamps with a built-in starter, and as a result, they obtained good results using ceramic thick-film resistors. Ceramic thick film resistors, which are made by interposing a thick film resistor such as tungsten in ceramic, were originally used for IC boards, heaters, etc. It is vibration resistant, heat resistant, and can be molded into a relatively compact size, so it was not inconceivable that it could be used as a current limiting resistor in a high-pressure discharge lamp with a built-in starter, as mentioned above. In order to use the device in a commercial environment, the following dimensional and thermal problems had to be solved. The size problem is related to the switching current of the starting circuit, and if the ceramic thick-film resistor is used with safety in mind so that it will not be destroyed even if the temperature rises, the resistor's size will become extremely large, making it difficult to incorporate it into the discharge lamp. It becomes difficult. Generally, it is considered safe to use ceramic thick film resistors with a surface load of 10W/ cm2 or less (the value obtained by dividing the resistive load by the surface area), especially a surface load of about 5W/ cm2 .
If the switching current of the starting circuit is approximately 1A, and the surface load is increased to the above value, the resistor will become too large to be incorporated into a discharge lamp. Therefore, if the dimensions of the resistor are made small enough to be incorporated into a discharge lamp, a thermal problem arises in which the resistor is destroyed due to temperature rise.
本発明はセラミツク厚膜抵抗体を用いてしかも
前記のような寸法上及び熱的問題を解決した始動
回路内蔵型高圧放電灯を提供することを目的とす
る。 SUMMARY OF THE INVENTION An object of the present invention is to provide a high-pressure discharge lamp with a built-in starting circuit that uses a ceramic thick-film resistor and solves the above-mentioned dimensional and thermal problems.
第２図は本発明の放電灯が実現される基本的な
回路構成を示す。第２図において、第１図の素子
と同様のものは同一参照番号で示し、動作上も同
様に機能するものである。第１図の回路と異なる
点はフイラメント抵抗５が第２図の回路において
はセラミツク厚膜抵抗体８とフイラメントヒータ
７で置換されている。フイラメントヒータ７は専
らバイメタルスイツチ４を熱的に開閉するのに用
いられ、セラミツク厚膜抵抗体８は主としてスイ
ツチング電流を所定値に制限するために用いられ
る。 FIG. 2 shows the basic circuit configuration for realizing the discharge lamp of the present invention. In FIG. 2, elements similar to those in FIG. 1 are designated by the same reference numerals and function in a similar manner in operation. The difference from the circuit of FIG. 1 is that the filament resistor 5 in the circuit of FIG. 2 is replaced by a ceramic thick film resistor 8 and a filament heater 7. The filament heater 7 is used exclusively to thermally open and close the bimetal switch 4, and the ceramic thick film resistor 8 is used mainly to limit the switching current to a predetermined value.
第３図は外球６内に発光管１と始動回路を収容
した放電灯Ｌを概略図で示す。発光管１は支柱９
その他の支持具によつて常套的な方法で外球６内
に保持される。始動回路は第２図に示す如くバイ
メタルスイツチ４、このスイツチを熱応動的に開
閉するフイラメントヒータ７、セラミツク厚膜抵
抗体８を直列に接続してなり、これを組立体１０
として示す。この組立体１０は電気的には発光管
１と並列に接続され、機械的には第３図に示す如
く発光管１の一方の端部、即ち放電灯のネツク側
に発光管から放射される光を遮らないような位置
に固定する。 FIG. 3 schematically shows a discharge lamp L in which an arc tube 1 and a starting circuit are housed in an outer bulb 6. The luminous tube 1 is the support 9
It is held within the outer sphere 6 in a conventional manner by other supports. As shown in FIG. 2, the starting circuit consists of a bimetal switch 4, a filament heater 7 that thermally opens and closes the switch, and a ceramic thick film resistor 8 connected in series.
Shown as This assembly 10 is electrically connected in parallel with the arc tube 1, and mechanically, as shown in FIG. Fix it in a position where it does not block the light.
始動回路としての組立体１０の一実施例を第４
図に示す。この実施例は第３図に示すような配置
形態をとるようにセラミツク厚膜抵抗体８を平板
円環状に形成し、その上にバイメタルスイツチ４
とフイラメントヒータ７を以下述べるような方法
で設置する。 One embodiment of the assembly 10 as a starting circuit is shown in the fourth embodiment.
As shown in the figure. In this embodiment, a ceramic thick film resistor 8 is formed into a flat annular shape so as to take the arrangement shown in FIG.
and the filament heater 7 are installed in the manner described below.
セラミツク厚膜抵抗体８はタングステン、モリ
ブデン等の難溶性金属厚膜抵抗体を板状のセラミ
ツク中にサンドイツチ状に介在させてなる。かか
るセラミツク厚膜抵抗体を出力100〔Ｗ〕乃至１
〔KW〕の放電灯に採用しそれらを200〔Ｖ〕の電
圧電源に接続する場合の設定条件は次の通りであ
る。 The ceramic thick film resistor 8 is formed by interposing a hardly soluble metal thick film resistor such as tungsten or molybdenum in a sandwich-like structure in a plate-like ceramic plate. Such a ceramic thick film resistor has an output of 100 [W] to 1
The setting conditions are as follows when used in [KW] discharge lamps and connected to a 200 [V] voltage power supply.
スイツチング電流 0.8〔Ａ〕（100〔Ｗ〕用）〜
1.5〔Ａ〕（１〔KW〕用）
スイツチ動作時抵抗値 250〔Ω〕〜130〔Ω〕
スイツチ動作時抵抗負荷 130〔Ｗ〕〜300〔Ｗ〕
叙上の設定条件をもとに具貞的にセラミツク厚
膜抵抗体を設計した。タングステン厚膜を用いそ
の抵抗値が200〔Ｖ〕の電源電圧を印加した場合
通電時間10秒後、即ちスイツチ動作時に180
〔Ω〕となるようにすると、スイツチング電流は
1.1〔Ａ〕、スイツチ動作時負荷は220〔Ｗ〕とな
る。かかるセラミツク厚膜抵抗体の形状寸法は次
の通りである。Switching current 0.8 [A] (for 100 [W]) ~
1.5 [A] (for 1 [KW]) Resistance value when switch is operating 250 [Ω] ~ 130 [Ω] Resistive load when switch is operating 130 [W] - 300 [W] Based on the setting conditions described above We designed a ceramic thick-film resistor based on the design. When using a thick tungsten film and applying a power supply voltage with a resistance value of 200 [V], after 10 seconds of energization, that is, when the switch is operated, the resistance will be 180 V.
[Ω], the switching current will be
1.1 [A], the load when the switch is activated is 220 [W]. The dimensions of such a ceramic thick film resistor are as follows.
平板円環状
外径 27〔mmφ〕
内径 ７〔mmφ〕
厚さ ２〔mmφ〕
表面積 10.7〔cm2〕
前述の如くスイツチ動作時負荷は220〔Ｗ〕で
あるから表面負荷は20.6〔Ｗ／cm2〕となる。Flat plate annular outer diameter 27 [mmφ] Inner diameter 7 [mmφ] Thickness 2 [mmφ] Surface area 10.7 [cm 2 ] As mentioned above, the load during switch operation is 220 [W], so the surface load is 20.6 [W/cm 2 ].
このように形成したセラミツク厚膜抵抗体８の
一方の面にバイメタルスイツチ４とフイラメント
ヒータ７が取付けられる。先ず、フイラメントヒ
ータ７は所望の間隔をあけてセラミツク本体に植
設された２本の金属支柱１１，１２に張架され
る。支柱は後述するような電気接続路を形成する
ようにロー付けすることによつて植設される。張
架したフイラメントヒータ７に対し一定の間隔に
おいてバイメタルスイツチ４を構成するバイメタ
ル部材４Ａがバイメタル支柱１３に取付けられ
る。バイメタル部材４Ａの一方の端部は自由端と
なつており、その自由端に下方に延びる棒状接点
４Ｂが固着される。この棒状接点４Ｂが接触し常
閉接点を形成する他方の接点４Ｃがフイラメント
ヒータ支柱１１に固定される。そしてこの接点４
ＣにはＬ字形の電極端子１４が取付けられる。 A bimetal switch 4 and a filament heater 7 are attached to one surface of the ceramic thick film resistor 8 thus formed. First, the filament heater 7 is stretched between two metal supports 11 and 12 planted in the ceramic body at a desired interval. The struts are installed by brazing to form electrical connections as described below. Bimetal members 4A constituting the bimetal switch 4 are attached to the bimetal support 13 at a constant interval with respect to the stretched filament heater 7. One end of the bimetal member 4A is a free end, and a downwardly extending rod-shaped contact 4B is fixed to the free end. The other contact 4C, which the rod-shaped contact 4B contacts and forms a normally closed contact, is fixed to the filament heater support column 11. And this contact point 4
An L-shaped electrode terminal 14 is attached to C.
叙上のように電極端子１４は組立体の一方の入
力端子となるが、他方の電極端子１５はセラミツ
ク本体の側壁より取出される。この電極端子１５
は入力端子であると共に組立体１０を発光管支持
支柱９に取付け保持する役をする。組立体１０を
堅固に保持するために支持端１６が電極端子１５
の反対側に設けられるが、この支持端子は単に組
立体を機械的に保持するためのものである。 As mentioned above, the electrode terminal 14 serves as one input terminal of the assembly, while the other electrode terminal 15 is taken out from the side wall of the ceramic body. This electrode terminal 15
serves as an input terminal and also serves to attach and hold the assembly 10 to the arc tube support column 9. Support end 16 is connected to electrode terminal 15 to firmly hold assembly 10.
This support terminal is provided solely to mechanically hold the assembly.
第４図の組立体１０の電流通路は次のように形
成される。即ち、
電極端子１５−セラミツク厚膜抵抗体８に埋設
した抵抗体（図示せず）−フイラメントヒータ支
柱１１−フイラメントヒータ７−フイラメント支
柱１２−バイメタル支柱１３−バイメタル部材４
Ａ−一方のバイメタル接点４Ｂ−他方のバイメタ
ル接点４Ｃ−電極端子１４。 The current path of the assembly 10 of FIG. 4 is formed as follows. That is, the electrode terminal 15 - the resistor embedded in the ceramic thick film resistor 8 (not shown) - the filament heater column 11 - the filament heater 7 - the filament column 12 - the bimetal column 13 - the bimetal member 4
A - One bimetal contact 4B - The other bimetal contact 4C - Electrode terminal 14.
上記のような電流通路は第２図のセラミツク厚
膜抵抗体８、フイラメントヒータ７、バイメタル
スイツチ４の直列接続路そのものである。このよ
うな電流通路を形成する組立体１０が電極端子１
５と支持端子１６により発光管支持支柱９に固定
される。従つて、電極端子１５には支柱９を介し
て電流が流れ、他方の電極端子１４にはリード線
（図示せず）を介して電流通路が形成される。 The current path as described above is the same as the series connection path of the ceramic thick film resistor 8, filament heater 7, and bimetal switch 4 shown in FIG. The assembly 10 forming such a current path is the electrode terminal 1.
5 and support terminals 16 to be fixed to the arc tube support column 9. Therefore, a current flows through the electrode terminal 15 via the support 9, and a current path is formed through the other electrode terminal 14 via a lead wire (not shown).
叙上のような組立体を外球内に収容した放電灯
を始動するに際し電源３を投入すると、フイラメ
ントヒータ７に制限電流が流れ加熱される。ヒー
タが所定の温度に達するとバイメタルスイツチ４
が開放して前述の如く高圧パルスを発生する。パ
ルスが発生するまでの時間、即ちセラミツク厚膜
抵抗体８の通電時間は５〜10秒である。バイメタ
ルスイツチ４には製作上バラツキがあるので更に
通電時間の長いものがあり得る。しかし規格品で
ある限り最高15秒を見込めば充分である。 When the power source 3 is turned on to start a discharge lamp in which the assembly as described above is housed in the outer bulb, a limited current flows through the filament heater 7 and heats it. When the heater reaches the predetermined temperature, bimetal switch 4
opens and generates a high voltage pulse as described above. The time until the pulse is generated, that is, the time during which the ceramic thick film resistor 8 is energized, is 5 to 10 seconds. Since there are manufacturing variations in the bimetal switch 4, there may be some that require a longer energization time. However, as long as it is a standard product, a maximum of 15 seconds is sufficient.
一方、セラミツク厚膜抵抗体は熱的に一定の限
界を有し、600℃〜800℃にて通常破壊する。他
方、前述の如くセラミツク厚膜抵抗体は真空又は
不活性ガス外球内に収容され外部からの熱的影響
を殆んど受けないので一定通電時間にて到達する
温度は実質的にその表面負荷で定まる。実験によ
ると、セラミツク厚膜抵抗体の通電時間11秒でそ
れが600℃に達する表面負荷は30〔Ｗ／cm2〕であ
つた。 On the other hand, ceramic thick film resistors have a certain thermal limit and usually break down at 600°C to 800°C. On the other hand, as mentioned above, ceramic thick film resistors are housed in a vacuum or inert gas outer sphere and are hardly affected by external heat, so the temperature reached during a certain period of energization is substantially equal to the surface load. It is determined by According to experiments, the surface load at which the ceramic thick film resistor reached 600° C. in 11 seconds of current application was 30 [W/cm 2 ].
前述の如く、抵抗体は外球内に収容され、しか
も配光上その設置位置が限られるから、セラミツ
ク厚膜抵抗体はその容積なかんずく表面積が小さ
いことが望ましい。しかし乍ら、表面積を小さく
すると必然的に表面負荷が大きくなる。表面負荷
が大きいと通電時間に対して温度上昇が大とな
り、このことはセラミツク厚膜抵抗体の破壊につ
ながる。前述のように、実験結果から通電時間が
15秒で600℃の温度に達し、これはセラミツク抵
抗体の破壊される臨界温度であるから、破壊臨界
温度に達する前にバイメタルスイツチ４が必ず開
放するようにする必要がある。そのため、本発明
においてはバイメタルスイツチ４がヒータ７の加
熱によつて開放する温度、即ち熱応動温度以上に
なるとヒータ７の熱にセラミツク抵抗体８からの
輻射熱が重畳されてセラミツク厚膜抵抗体の破壊
臨界温度に達する以前にバイメタルスイツチ４が
確実に開放するようにする。 As mentioned above, the resistor is housed within the outer sphere, and its installation position is limited due to light distribution, so it is desirable that the ceramic thick-film resistor has a small volume, especially a small surface area. However, reducing the surface area inevitably increases the surface load. If the surface load is large, the temperature rise will be large with respect to the energization time, which will lead to destruction of the ceramic thick film resistor. As mentioned above, the experimental results show that the energizing time is
The temperature reaches 600° C. in 15 seconds, which is the critical temperature at which the ceramic resistor is destroyed, so it is necessary to ensure that the bimetallic switch 4 opens before the critical temperature is reached. Therefore, in the present invention, when the temperature at which the bimetal switch 4 is opened by the heating of the heater 7, that is, the temperature exceeds the thermal response temperature, the radiant heat from the ceramic resistor 8 is superimposed on the heat of the heater 7, and the ceramic thick film resistor is heated. To ensure that a bimetal switch 4 is opened before the critical temperature for destruction is reached.
バイメタルスイツチ４の熱応答温度以上になる
とセラミツク厚膜抵抗体８からの輻射熱が重畳さ
れるようにするにはバイメタルスイツチをセラミ
ツク厚膜抵抗体８に対して所定の位置関係に保持
すればよい。 In order for the radiant heat from the ceramic thick film resistor 8 to be superimposed when the temperature exceeds the thermal response temperature of the bimetal switch 4, the bimetal switch may be held in a predetermined positional relationship with respect to the ceramic thick film resistor 8.
例えば第４図に示すような構成の組立体では、
バイメタル部材４Ａをセラミツク厚膜抵抗体８の
上表面から10mm〜17mm程度離間して設置しておけ
ばよい。離間距離をどの程度にするかはフイラメ
ントヒータやバイメタルを支持する支柱の直径等
にも依り、これは主に経済的に定められる。本発
明にとつて重要なことは所定の通電時間後セラミ
ツク厚膜抵抗体がバイメタルスイツチに積極的に
輻射熱を重畳するようにして、セラミツク厚膜抵
抗体の破壊臨界温度に達する前に始動回路のバイ
メタルスイツチを確実に開放するようにしたこと
である。そのため、セラミツク厚膜抵抗体は一般
に安全とされている10〔Ｗ／cm2〕以下の表面負荷
を超える高い表面負荷で使用することができ、そ
の結果、抵抗体の小型化を図れることとなるので
ある。 For example, in the assembly shown in FIG.
The bimetal member 4A may be placed at a distance of about 10 mm to 17 mm from the upper surface of the ceramic thick film resistor 8. The distance to be separated depends on the diameter of the filament heater and the support supporting the bimetal, and is determined primarily from an economic standpoint. What is important for the present invention is that the ceramic thick film resistor actively superimposes radiant heat on the bimetal switch after a predetermined energization time, so that the starting circuit is activated before the ceramic thick film resistor reaches its critical breakdown temperature. The purpose is to ensure that the bimetal switch is opened. Therefore, ceramic thick-film resistors can be used with high surface loads that exceed the generally safe surface loads of 10 [W/cm 2 ] or less, and as a result, the resistors can be made smaller. It is.
以上本発明を図示実施例について説明したが、
本発明による始動回路にバイメタルスイツチ加熱
用のヒーターとは別に限流用抵抗を用い、この抵
抗をセラミツク厚膜抵抗体によつて実現すること
ができるので、耐振性をもたせることができ、し
かもコンパクトに形成することができる。 Although the present invention has been described above with reference to the illustrated embodiments,
The starting circuit according to the present invention uses a current limiting resistor in addition to the heater for heating the bimetal switch, and this resistor can be realized by a ceramic thick film resistor, so it can have vibration resistance and be compact. can be formed.
また、本発明の実施例によれば、セラミツク厚
膜抵抗体を平板内環状となし、これにヒータをバ
イメタルスイツチを植設した上、放電灯外球内の
発光管の一方の端部又はその延長線上に発光管と
同心的に配置すると、設置が容易に出来、しかも
遮光することがないから機械的に優れしかも光学
的特性のよい始動回路内蔵型の高圧放電灯を提供
することができる。 Further, according to an embodiment of the present invention, the ceramic thick film resistor is formed into an annular shape inside a flat plate, and a heater and a bimetallic switch are embedded in this, and one end of the arc tube in the outer bulb of the discharge lamp or its When arranged concentrically with the arc tube on an extended line, it is easy to install and does not block light, making it possible to provide a high-pressure discharge lamp with a built-in starting circuit that is mechanically superior and has good optical characteristics.
第１図は従来の始動回路内蔵型高圧放電灯の回
路図、第２図は本発明が実現される始動回路内蔵
型高圧放電灯の回路図、第３図は本発明の放電灯
の外観概略図、第４図は本発明の放電灯に用いる
組立体の一実施例を示す概略斜視図である。
Fig. 1 is a circuit diagram of a conventional high-pressure discharge lamp with a built-in starting circuit, Fig. 2 is a circuit diagram of a high-pressure discharge lamp with a built-in starting circuit in which the present invention is realized, and Fig. 3 is a schematic external appearance of the discharge lamp of the present invention. 4 are schematic perspective views showing one embodiment of an assembly used in the discharge lamp of the present invention.
Claims (1)
イメタルスイツチを加熱するためのヒーターと電
流制限用の抵抗体とを直列に接続してなる始動回
路を接続して、これらを外球内部に収納してな
り、インダクタンス安定器を介して点灯するよう
に構成した高圧放電灯において、 前記電流制限用の低抗体を平板状セラミツク厚
膜抵抗体とし、該セラミツク厚膜抵抗体による発
熱が前記ヒーターの発熱に重畳して加わり該抵抗
体の破壊臨界温度に達する前に前記バイメタルス
イツチが開放されるように当該バイメタルスイツ
チと該ヒーターとを上記抵抗体の一方の表面上に
当該表面より離間して設置することを特徴とする
始動回路内蔵型高圧放電灯。 ２ 特許請求の範囲第１項記載の高圧放電灯にお
いて、バイメタルスイツチのバイメタル部材をセ
ラミツク厚膜抵抗体の表面より少なくとも10mmだ
け離間して配置したことを特徴とする始動回路内
蔵型高圧放電灯。 ３ 特許請求の範囲第１項又は第２項記載の高圧
放電灯において、セラミツク厚膜抵抗体を真空に
した放電灯外球内に発光管と同心的に発光管の一
方の端部又はその延長線上に設置したことを特徴
とする始動回路内蔵型高圧放電灯。[Scope of Claims] 1. A starting circuit consisting of a bimetal switch, a heater for heating the bimetal switch, and a resistor for limiting current is connected in series in parallel with the arc tube, and these are removed. In a high-pressure discharge lamp housed inside a bulb and configured to be lit via an inductance ballast, the current-limiting low antibody is a flat ceramic thick-film resistor, and heat generation by the ceramic thick-film resistor is provided. The bimetallic switch and the heater are mounted on one surface of the resistor so that the bimetallic switch is opened before the bimetallic switch is opened before the heat generated by the heater overlaps with the heat generation and reaches the critical breakdown temperature of the resistor. A high-pressure discharge lamp with a built-in starting circuit that is characterized by being installed at a distance. 2. A high-pressure discharge lamp with a built-in starting circuit according to claim 1, characterized in that the bimetallic member of the bimetallic switch is spaced apart from the surface of the ceramic thick-film resistor by at least 10 mm. 3. In the high-pressure discharge lamp according to claim 1 or 2, one end of the arc tube or an extension thereof is provided concentrically with the arc tube within the outer bulb of the discharge lamp in which the ceramic thick film resistor is evacuated. A high-pressure discharge lamp with a built-in starting circuit characterized by being installed on a line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5438679A JPS55146898A (en) | 1979-05-02 | 1979-05-02 | Device for starting discharge lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5438679A JPS55146898A (en) | 1979-05-02 | 1979-05-02 | Device for starting discharge lamp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55146898A JPS55146898A (en) | 1980-11-15 |
| JPS6223438B2 true JPS6223438B2 (en) | 1987-05-22 |
Family
ID=12969238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5438679A Granted JPS55146898A (en) | 1979-05-02 | 1979-05-02 | Device for starting discharge lamp |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55146898A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55161357A (en) * | 1979-06-04 | 1980-12-15 | Japan Storage Battery Co Ltd | Metal vapour discharge lamp |
| JPS5673856A (en) * | 1979-11-22 | 1981-06-18 | Iwasaki Electric Co Ltd | Starting device of electric-discharge lamp |
| JPS56165259A (en) * | 1980-05-22 | 1981-12-18 | Matsushita Electronics Corp | Discharge lamp |
| JPS58155641A (en) * | 1982-03-10 | 1983-09-16 | Toshiba Corp | Metallic vapor discharge lamp |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5324151U (en) * | 1976-08-06 | 1978-03-01 |
-
1979
- 1979-05-02 JP JP5438679A patent/JPS55146898A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5324151U (en) * | 1976-08-06 | 1978-03-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55146898A (en) | 1980-11-15 |
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