JPS62226670A - Manufacture of compound semiconductor solar cell - Google Patents
Manufacture of compound semiconductor solar cellInfo
- Publication number
- JPS62226670A JPS62226670A JP61068574A JP6857486A JPS62226670A JP S62226670 A JPS62226670 A JP S62226670A JP 61068574 A JP61068574 A JP 61068574A JP 6857486 A JP6857486 A JP 6857486A JP S62226670 A JPS62226670 A JP S62226670A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- compound semiconductor
- solar cell
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 229910001297 Zn alloy Inorganic materials 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、シリコン単結晶（以下Ｓｉという）基に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a silicon single crystal (hereinafter referred to as Si) group.
（従来の技術）
従来の化合物半導体太陽電池は、−例として特開昭５９
−７５６７７号公報に記載されている。(Prior art) Conventional compound semiconductor solar cells are as follows:
It is described in the publication No.-75677.
一般の化合物半導体太陽電池は、第１導電型ＧａＡｓ基
板上に、液相または気相成長法により第１導電型ＧａＡ
ａ層を５μｍ程度の厚さにエピタキシャル成長させ、こ
の上に第２導電型ＧａＡｓ層を１．０μｍ程度の厚さに
エピタキシャル成長させ、この上に第２導電型Ｇ ａ
１− ＸＡｌ−ＸＡｓ層を０．２μｍ程度の厚さに成長
させ、次に第２導電側電極をとるために表面の第２導電
型Ｇａ １−ｚＡＬｚＡｓ層の１部を化学エツチングに
より除去して第２導電型ＧａＡｓ層を露出し、その後絶
縁膜として窒化シリコンを３０００久厚さに被着し、さ
らにこの窒化シリコンを１部除去することにより前記第
２導電型ＧａＡｓ層を露出し、この露出部分に第２導電
側電極としてＡｕ −Ｚ ｎ等を蒸着することにより形
成し、第１導電型ＧａＡｓ基板側には第１導電側電極と
してＡｕ−Ｇｅ等を蒸着およびエツチングすることによ
り形成さ扛る。A general compound semiconductor solar cell is manufactured by growing a first conductivity type GaAs substrate on a first conductivity type GaAs substrate by a liquid phase or vapor phase growth method.
The a layer is epitaxially grown to a thickness of about 5 μm, a second conductivity type GaAs layer is epitaxially grown to a thickness of about 1.0 μm, and a second conductivity type GaAs layer is epitaxially grown on this to a thickness of about 1.0 μm.
A 1-XAl-XAs layer is grown to a thickness of about 0.2 μm, and then a part of the second conductive type Ga1-zALzAs layer on the surface is removed by chemical etching in order to form a second conductive side electrode. The second conductivity type GaAs layer is exposed, and then silicon nitride is deposited as an insulating film to a thickness of 3000 mm, and a portion of this silicon nitride is removed to expose the second conductivity type GaAs layer. A second conductive side electrode is formed by vapor-depositing Au-Zn, etc., and a first conductive-side electrode is formed by vapor-depositing and etching Au-Ge etc. on the first conductive type GaAs substrate side. Ru.
この構造は、化合物半導体太陽電池の１例であるが、基
本としてエピタキシャル成゛長技術を使った製造方法が
多く使われている。このような化合物半導体太陽電池は
、Ｓｉを使った太陽電池に比べて約培の２０％以上の光
電変換効率を有している力め、小型で高効率の太陽電池
を得ることができる。Although this structure is an example of a compound semiconductor solar cell, a manufacturing method that basically uses epitaxial growth technology is often used. Such a compound semiconductor solar cell has a photoelectric conversion efficiency of about 20% or more compared to a solar cell using Si, and it is possible to obtain a small, highly efficient solar cell.
（発明が解決しようとする問題点）
しかしながら、以上のように化合物半導体基板、たとえ
ばＧａＡｓ基板の上にＧａＡｓ系化合物半導体をエピタ
キシャル成長させて太陽電池を形成すると、シリコン系
の太陽電池に比べ高価で且つ重量が大きくなるという問
題点があった。(Problems to be Solved by the Invention) However, when a solar cell is formed by epitaxially growing a GaAs-based compound semiconductor on a compound semiconductor substrate, for example, a GaAs substrate, as described above, it is more expensive and expensive than a silicon-based solar cell. There was a problem that the weight increased.
本発明の目的は、安価で軽量で且つ光電変換効率の高い
太陽電池を提供することにある。An object of the present invention is to provide a solar cell that is inexpensive, lightweight, and has high photoelectric conversion efficiency.
（問題点を解決するための手段）
本発明は前記問題点を解決するために、低抵抗第１導電
型のＳｉ基板を準備し、この８１基板の表面に互いに直
交する複数の溝を形成し、このＳｊ基板上に第１導電型
ＧａＡｓの第１層、第２導亀型ＧａＡｓの第２層および
第２導電型ＧａＡｔＡｓの第３層を順次エピタキシャル
成長させ、この第３層の溝上部分を除去することにより
第２層を露出する開口を形成し、この第３層の表面にの
み絶縁膜を形成し、この基板を機械的な力により平坦化
し、少なくとも前記開口を覆い且つ前記第２層に接触す
る上部電極を形成するものである。(Means for Solving the Problems) In order to solve the above problems, the present invention prepares a low-resistance first conductivity type Si substrate, and forms a plurality of mutually perpendicular grooves on the surface of this 81 substrate. , on this Sj substrate, a first layer of first conductivity type GaAs, a second layer of second conductivity type GaAs, and a third layer of second conductivity type GaAtAs are sequentially grown epitaxially, and the upper part of the groove of this third layer is removed. An insulating film is formed only on the surface of the third layer, and the substrate is flattened by mechanical force, covering at least the opening and forming an insulating film on the second layer. This forms the contacting upper electrode.
（作用）
本発明によれば、以上説明したようにＳｔ基板上に化合
物半導体層をエピタキシャル成長させているので、熱膨
張係数の違いから基板に反りが生じるが、本発明ではＳ
ｉ基板表面にあらかじめ、互いに直交する複数の溝を形
成し、化合物半導体層の成長後、機械的な力により平坦
化しているのでストレスが溝の内部に集中し、クラック
を溝の内部にのみ発生させるので太陽電池の製造プロセ
スで平坦な基板として取り扱えるだけでなく、出来上っ
た太陽電池も平坦になる。さらに、以上説明したように
、溝上部分の開口を覆うように上部電極を形成している
ので、この上部電極が溝内部のクラックの入った化合物
半導体領域を保護するパッンベーション膜として働く。(Function) According to the present invention, since the compound semiconductor layer is epitaxially grown on the St substrate as described above, the substrate is warped due to the difference in thermal expansion coefficient.
Multiple grooves perpendicular to each other are formed in advance on the surface of the i-substrate, and after the compound semiconductor layer is grown, it is flattened by mechanical force, so stress is concentrated inside the grooves and cracks occur only inside the grooves. Not only can it be used as a flat substrate in the solar cell manufacturing process, but the resulting solar cell will also be flat. Furthermore, as explained above, since the upper electrode is formed to cover the opening above the groove, this upper electrode functions as a passivation film that protects the cracked compound semiconductor region inside the groove.
（実施例）
第１図（Ａ）〜■）は本発明の一実施例を説明するため
の化合物半導体太陽電池の断面図であり、以下図面に溢
って説明する。(Example) FIGS. 1A to 1) are cross-sectional views of a compound semiconductor solar cell for explaining an example of the present invention, and the explanation will be given below with reference to the drawings.
まず、第１図（Ａ）に示すように、ｎ型のＳｔ基板１１
０表面に２０μｍ幅の溝１２を複数、オリエンテーショ
ンフラット面に平行および垂直に、形成予定の上側電極
形状に対応して格子状または升目状に加工する。２イン
チ８１基板をエピタキシャル成長用の基板とする時には
通常、基板の厚みは２００〜２５０μｍであり溝１２の
加工は１００〜１５０μｍ深さにエツチングまたはグイ
シングツ−により行う。大口径の基板については、基板
の残りの厚みが１００〜１５０μｍとなるように溝１２
を加工する。溝の幅は出来るだけ細い方が有効である。First, as shown in FIG. 1(A), an n-type St substrate 11
A plurality of grooves 12 having a width of 20 μm are formed on the 0 surface parallel to and perpendicular to the orientation flat surface in a grid or square shape corresponding to the shape of the upper electrode to be formed. When a 2-inch 81 substrate is used as a substrate for epitaxial growth, the thickness of the substrate is usually 200 to 250 .mu.m, and the grooves 12 are formed by etching or grazing to a depth of 100 to 150 .mu.m. For large-diameter substrates, the grooves should be
Process. It is effective to make the width of the groove as narrow as possible.
次に第１図の）に示すように、有機金属化学気相成長法
（ＭＯＣＶＤ法）あるいは分子課エピタキ／−法（ＭＢ
Ｅ法）等のエピタキシャル成長技術を用いて、Ｓｉ基板
１１上にまずｎ型のＧａＡｓを低温約４５０℃程度で２
００Ｘ程度厚さ成長し、成長温度を７００〜７５０°Ｃ
に上げて同様のｎ型ＧａＡｓを５μｍ成長することによ
りｎ型ＧａＡｓ層１３を形成し、ｐ型ＧａＡｓ層１４を
１μｍ厚さに成長し、ついでｐ型ＧａＡムｓ層１５を０
６２μｍ成長する。このように、Ｓｉ基板１ノ上にＧａ
Ａｓ層１３．１４やＧａＡｔＡｓ層１５を５μｍ以上エ
ピタキシャル成長すると２インチＳｉ基板１１全上面に
成長した材質の熱膨張係数の差により第１図（Ｂ）に示
したように６０〜８０μｍ上に凹に反った形で変形する
。Next, as shown in Fig. 1), metal organic chemical vapor deposition (MOCVD) or molecular epitaxy/- method (MB
Using an epitaxial growth technique such as E method, n-type GaAs is first grown on the Si substrate 11 at a low temperature of about 450°C.
Grow to a thickness of about 00X, and grow at a growth temperature of 700 to 750°C.
An n-type GaAs layer 13 is formed by growing similar n-type GaAs to a thickness of 5 μm, a p-type GaAs layer 14 is grown to a thickness of 1 μm, and then a p-type GaAs layer 15 is grown to a thickness of 5 μm.
Grows to 62 μm. In this way, Ga is placed on the Si substrate 1.
When the As layer 13, 14 or the GaAtAs layer 15 is epitaxially grown to a thickness of 5 μm or more, it becomes concave by 60 to 80 μm as shown in FIG. Deformed in a warped shape.
次に、第１図（Ｃ）に示すように、ｐ型ＧａＡＡＡｓ層
１５の溝１２の上にあたる部分をエツチング除去するこ
とにより太陽電池のコンタクト部１６となる窓を形成す
る。この時、ｐ型ＧａＡｔＡｓ層１５の上にレノストを
塗布し密着露光によりマスク合せを行うことによりエピ
タキシャル成長した基板は全体が平坦化され、その時一
番大きなストレスを受ける溝１２の内部に成長したｎ型
及びｐ型ＧａＡｓ層１３．１４にクラック１７が入シ、
基板の変形はなくなる。その上に全面にＳｉ３Ｎ４など
の絶縁膜１８を約３０００に厚さに被着する。Next, as shown in FIG. 1C, a portion of the p-type GaAAAs layer 15 above the groove 12 is etched away to form a window that will become the contact portion 16 of the solar cell. At this time, by coating renost on the p-type GaAtAs layer 15 and performing mask alignment by contact exposure, the epitaxially grown substrate is flattened as a whole, and the n-type grown inside the groove 12, which is subjected to the greatest stress at that time, is And cracks 17 have appeared in the p-type GaAs layers 13 and 14,
No more deformation of the board. An insulating film 18 made of Si3N4 or the like is deposited on the entire surface to a thickness of about 3000 nm.
次に、第１図の）に示すように、溝１２の上部に形成し
た太陽電池のコンタクト部１６部分の絶縁膜１８をエツ
チングによりと９除く、その後、コンタクト部１６にＡ
ｕ −Ｚ ｎ合金層のｐ側電極１９を形成する。基板の
裏面には太陽電池のｎ側電極２０として例えばＡｕを全
面に蒸着し出来上る。Next, as shown in FIG.
A p-side electrode 19 of the u-Zn alloy layer is formed. For example, Au is deposited on the entire surface of the back surface of the substrate as the n-side electrode 20 of the solar cell.
本発明の実施例によれば、以上説明したように、ｎ＋型
のＳｉ基板１ノ上にｎ型ＧａＡｓ層１３、ｐ型ＧａＡｓ
層１４およびｐ型ＧａＡｔＡｓ層１５を順次エピタキシ
ャル成長させて太陽電池を構成しているので、軽量且つ
高い光電変換効率の太陽電池を安価に作ることができる
。また、Ｓｉ基板ｌｌ上に各化合物半導体をエピタキシ
ャル成長させると、それら材質の熱膨張係数の違いによ
り凹形に基板が変形するが、各化合物半導体層をエピタ
キシャル成長させた後の平坦化工程で溝１２の内部にス
トレスを集中し、クラック１７を溝１２の内部にのみ発
生させるので、太陽電池の製造プロセスで平坦な基板と
して取９扱えるだけでなく出来上った太陽電池そのもの
も平坦なものとなる。さらに、ｐ側電極１９は、溝１２
を覆うように形成されクラック１７の発生した化合物半
導体領域を保護するパッシベーション膜として働き、太
陽電池の劣化を防止する。According to the embodiment of the present invention, as described above, the n-type GaAs layer 13 and the p-type GaAs layer 13 are formed on the n+ type Si substrate 1.
Since the solar cell is constructed by sequentially epitaxially growing the layer 14 and the p-type GaAtAs layer 15, a lightweight solar cell with high photoelectric conversion efficiency can be manufactured at low cost. Furthermore, when each compound semiconductor layer is epitaxially grown on a Si substrate 11, the substrate is deformed into a concave shape due to the difference in thermal expansion coefficients of these materials. Since stress is concentrated inside and cracks 17 are generated only inside the grooves 12, not only can it be handled as a flat substrate in the solar cell manufacturing process, but the resulting solar cell itself is also flat. Furthermore, the p-side electrode 19
It acts as a passivation film to protect the compound semiconductor region where the crack 17 has occurred, and prevents deterioration of the solar cell.
尚、本発明の実施例におけるＳｉ基板１ノおよび各化合
物半導体層１３，１４．１５の導電型は、それぞれ逆の
導電型でもよい。また、ｎ側電極２０は、本発明の実施
例において、最後に形成しているが、他の工程で形成し
てもよい。Incidentally, the conductivity types of the Si substrate 1 and each compound semiconductor layer 13, 14, 15 in the embodiment of the present invention may be opposite conductivity types. Furthermore, although the n-side electrode 20 is formed last in the embodiment of the present invention, it may be formed in another step.
・（発明の効果）
本発明によれば、以上詳細に説明したようにＳｉ基板を
用いてＧａＡｓ系化合物半導体の太陽電池を形成してい
るので、軽量で且つ高い光電変換効率を有する化合物半
導体太陽電池を製造することができる。- (Effects of the Invention) According to the present invention, as explained in detail above, a GaAs-based compound semiconductor solar cell is formed using a Si substrate, so a compound semiconductor solar cell that is lightweight and has high photoelectric conversion efficiency can be obtained. Batteries can be manufactured.
第１図（Ａ）〜■）は本発明の一実施例を説明するため
の化合物半導体太陽電池の断面図である。
１１−−・Ｓｉ基板、１２ ・・・溝、１３− ｎ型Ｇ
ａＡｓ層、１４− ｐ型ＧａＡｓ層、１５ ・ｐ型Ｇａ
ＡｔＡａ層、１６ ・・・コにタクト部、１７・・・ク
ラック、１８・・・絶縁膜、１９・・・ｐ側電極、２０
・・・ｎ側電極。
特許出願人 沖電気工業株式会社
第１図FIGS. 1(A) to 1) are cross-sectional views of a compound semiconductor solar cell for explaining one embodiment of the present invention. 11--Si substrate, 12...groove, 13- n-type G
aAs layer, 14- p-type GaAs layer, 15 ・p-type Ga
AtAa layer, 16... tact portion, 17... crack, 18... insulating film, 19... p side electrode, 20
...n-side electrode. Patent applicant Oki Electric Industry Co., Ltd. Figure 1
Claims (1)
を形成する工程と、 該シリコン単結晶基板上に第１導電型ガリウム砒素の第
１層をエピタキシャル成長させる工程と、該第１層上に
第２導電型ガリウム砒素の第２層をエピタキシャル成長
させる工程と、 該第２層上に第２導電型アルミニウムガリウム砒素の第
３層をエピタキシャル成長させる工程と、該第３層の前
記溝上部分を除去することにより前記第２層を露出する
開口を形成する工程と、該第３層の表面に絶縁膜を形成
する工程と、該基板を機械的な力により平坦化する工程
と、少なくとも前記開口を覆い且つ前記第２層に接触す
る上部電極を形成する工程とを備えてなることを特徴と
する化合物半導体太陽電池の製造方法。[Claims] A step of preparing a silicon single crystal substrate of a first conductivity type; a step of forming a plurality of grooves perpendicular to each other on a surface of the silicon single crystal substrate; epitaxially growing a first layer of conductivity type gallium arsenide; epitaxially growing a second conductivity type gallium arsenide layer on the first layer; and epitaxially growing a second conductivity type aluminum gallium arsenide layer on the second layer. a step of epitaxially growing a third layer; a step of forming an opening exposing the second layer by removing a portion of the third layer above the groove; and a step of forming an insulating film on a surface of the third layer. manufacturing a compound semiconductor solar cell, comprising: flattening the substrate by mechanical force; and forming an upper electrode that covers at least the opening and contacts the second layer. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61068574A JPH077841B2 (en) | 1986-03-28 | 1986-03-28 | Method for manufacturing compound semiconductor solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61068574A JPH077841B2 (en) | 1986-03-28 | 1986-03-28 | Method for manufacturing compound semiconductor solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62226670A true JPS62226670A (en) | 1987-10-05 |
| JPH077841B2 JPH077841B2 (en) | 1995-01-30 |
Family
ID=13377677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61068574A Expired - Lifetime JPH077841B2 (en) | 1986-03-28 | 1986-03-28 | Method for manufacturing compound semiconductor solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077841B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165178A (en) * | 1987-12-22 | 1989-06-29 | Mitsubishi Electric Corp | Solar battery |
| JP2001044463A (en) * | 1999-07-27 | 2001-02-16 | Canon Inc | Solar cell and manufacture thereof |
| JP2011014897A (en) * | 2009-06-05 | 2011-01-20 | Sumitomo Chemical Co Ltd | Semiconductor substrate, photoelectric conversion device, method of manufacturing the semiconductor substrate, and method of manufacturing the photoelectric conversion device |
-
1986
- 1986-03-28 JP JP61068574A patent/JPH077841B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165178A (en) * | 1987-12-22 | 1989-06-29 | Mitsubishi Electric Corp | Solar battery |
| JP2001044463A (en) * | 1999-07-27 | 2001-02-16 | Canon Inc | Solar cell and manufacture thereof |
| JP2011014897A (en) * | 2009-06-05 | 2011-01-20 | Sumitomo Chemical Co Ltd | Semiconductor substrate, photoelectric conversion device, method of manufacturing the semiconductor substrate, and method of manufacturing the photoelectric conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH077841B2 (en) | 1995-01-30 |
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