JPS62225939A - Characteristic evaluator for semiconductor ion sensor - Google Patents
Characteristic evaluator for semiconductor ion sensorInfo
- Publication number
- JPS62225939A JPS62225939A JP61070151A JP7015186A JPS62225939A JP S62225939 A JPS62225939 A JP S62225939A JP 61070151 A JP61070151 A JP 61070151A JP 7015186 A JP7015186 A JP 7015186A JP S62225939 A JPS62225939 A JP S62225939A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ion
- contact
- porous material
- characteristic evaluation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000011156 evaluation Methods 0.000 claims abstract description 13
- 239000011148 porous material Substances 0.000 claims abstract description 13
- 239000000523 sample Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 229920000742 Cotton Polymers 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 13
- 238000012360 testing method Methods 0.000 description 6
- 241000257465 Echinoidea Species 0.000 description 3
- 102000004190 Enzymes Human genes 0.000 description 3
- 108090000790 Enzymes Proteins 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は半導体イオンセンサの％性評価装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a percentage evaluation device for semiconductor ion sensors.
（従来の技術）
従来、半導体イオンセンサの特性評価はチップをウェハ
より切り離しリード線等を付け、さらにリード線取り付
は部を樹脂等でモールドした後、これを側足溶液に浸漬
して行われて込た。(Prior art) Conventionally, the characteristics of semiconductor ion sensors have been evaluated by cutting the chip from the wafer and attaching lead wires, and then attaching the lead wires by molding the part with resin, etc., and then immersing it in a side solution. I was confused.
（発明が解決しようとする問題点）
このようｌこ、半導体イオンセンサを１個１個ウェハよ
り切５＃ｌて特性評価を行っていたのでは多大な時間の
浪費となり、天童生産には不利である。さらに、近年半
導体イオンセンサであるｌ５ＦＥＴ （イオン感受性電
界効果型トランジスタ）をウェハのままで加工し％ １
チツグ内の一部に酵素を固定化し、バイオセンサとする
技術が開発されている。これに関しては、例えば栗山ら
による「ア シングルチップ バイオセンサ（エヌ・イ
ー・シー リサーチ アンド ディベロップメント、７
８号、１−５頁、１９８５年２月号）」に述べられてい
るが、 ｌｓｆ”ＥＴｉバイオセンサの トランステ
ヱーサきして使用し、 ウェハから各チップに切り分け
られた時読に一個の酵素膜を持つバイオセンサとしての
機能を有している。特にこの様にウニへ段階での加工に
よってバイオセンサを作る場合、ウニへ段階でのＩ ８
ＰＥＴ自体の特性評価、バイオセンサへ加工したあ々
のウェハ状態での特性評価は重要である。この場合性わ
れうるテ２）としては、ｐＨ特性の評価、絶縁リークテ
ストなどが代表的なものであるが、これ以外にも反応時
間、ドリフトの検討などウニへ段階で採取した方か良ｂ
データは多く存在している。半導体イオンセンナの特性
評価を行うためには、イオン感応部を溶液に浸漬する事
が必要となる。(Problem to be solved by the invention) If semiconductor ion sensors were to be cut one by one from a wafer and evaluated for their characteristics, a great deal of time would be wasted, which would be disadvantageous to Tendo production. It is. Furthermore, in recent years, a semiconductor ion sensor, 15FET (ion sensitive field effect transistor), has been processed as a wafer and has improved by % 1.
A technology has been developed that immobilizes enzymes in a part of the chits and uses it as a biosensor. Regarding this, for example, Kuriyama et al.
8, pp. 1-5, February 1985 issue), it is used as a transducer for the lsf"ETi biosensor, and one enzyme membrane is used for each chip cut from the wafer. In particular, when making a biosensor by processing the sea urchin at the sea urchin stage, it has the function of a biosensor.
It is important to evaluate the characteristics of PET itself and the characteristics of the wafers processed into biosensors. Typical methods that may occur in this case (2) include evaluation of pH characteristics and insulation leakage tests, but there are also other tests such as reaction time, drift, etc. It would be better to sample the sea urchins in stages.
There is a lot of data. In order to evaluate the characteristics of a semiconductor ion sensor, it is necessary to immerse the ion sensing part in a solution.
そこで例えばウェハ全体を溶液に浸した場合、リード線
の取り出しあるいは絶縁に多くの問題が生じ、実際、ウ
ェハのままでテストする事は不可能である。For example, if the entire wafer is immersed in a solution, many problems will arise in removing the lead wires or insulating them, and in fact, it is impossible to test the wafer as it is.
本発明の目的は、この問題点を解決した半導体イオンセ
ンサの特性評価装置を提供することにある。An object of the present invention is to provide a semiconductor ion sensor characteristic evaluation device that solves this problem.
（問題点を解決するための手段）
本発明の半導体イオンセンサ特性評価装置は液体を含浸
し、かつその内部に電極を有した多孔性物質と、イオン
センサの例えばｌ５ＦＥＴのソース、ドレインのポンプ
インクバット部の様な少なくとも２つの電極から出カイ
＾゛号ｆ４’Ｊるための一対のプローブと、前記プロー
ブと′電極に接続する特性評価手段とを備えている。(Means for Solving the Problems) The semiconductor ion sensor characteristic evaluation device of the present invention uses a porous material impregnated with a liquid and having an electrode therein, and a pump ink for the source and drain of an ion sensor, such as an 15FET. The apparatus includes a pair of probes for emitting signals from at least two electrodes such as butt parts, and a characteristic evaluation means connected to the probes and the electrodes.
（作用）
ウェハ上の半導体イオンセンナのイオン感応部に接触す
る様に、内部にｆｉＬ＆を有し溶液を含浸させた多孔性
物質を配置し、イオンセンサの電極部にスロープを接触
することによってイオンセンサの出力信号を得、この信
号を特性評価を行う手段によって処理する。(Function) A porous material impregnated with a solution and having fiL& inside is arranged so as to contact the ion sensing part of the semiconductor ion sensor on the wafer, and by contacting the slope with the electrode part of the ion sensor, ions are detected. The output signal of the sensor is obtained and this signal is processed by means for performing characterization.
たとえば、ウェハ上の一例に並んだ複数個のイオンセン
サのイオン感応部を同時に前記多孔性物質に接触せしめ
、プローブを順次移動するか、あるいは−列すべてを同
時に接続せしめるプローブを用因ることによって、ウェ
ハからイオンセンサを切り離さずに、連続的に、迅速に
多数の半導体イオンセンサの特性評価を行うことができ
る。For example, by bringing the ion sensitive parts of a plurality of ion sensors arranged in a row on a wafer into contact with the porous material at the same time and moving the probes sequentially, or by using probes that connect all rows at the same time. , it is possible to continuously and rapidly evaluate the characteristics of a large number of semiconductor ion sensors without separating the ion sensors from the wafer.
（実施例） 第１図は本発明の実施例を示す全体構成図である。(Example) FIG. 1 is an overall configuration diagram showing an embodiment of the present invention.
サファイア基板１上に複数個作られたｌ５ＦＥＴの一列
のイオン感応部にｐ）１６．８６のｐＨ＊準液を含有し
内部に電極５８有する綿などの多孔性物質３が接触され
、−列に並んだｌ５ＦＥＴのソース・ドレイン各電極部
にプローブ４が接触されている。A porous material 3 such as cotton containing a pH* quasi-liquid of 16.86 and having an electrode 58 inside is brought into contact with a row of ion-sensitive parts of a plurality of 15FETs made on a sapphire substrate 1, and Probes 4 are in contact with the source and drain electrodes of the lined up I5FETs.
前記多孔性物質３内に設置された電極５がここではゲー
トとして作用する。それぞれの電極からの信号は特性評
価手段７へ送られ処理される。この場合、−列に並んだ
複数個のｌ５ＦＥＴの各ドレインは共通に結ばれ、各ソ
ースをスイッチ６により開閉することによって１個１個
、順次測定して込く。An electrode 5 placed within the porous material 3 acts here as a gate. The signals from each electrode are sent to the characteristic evaluation means 7 and processed. In this case, the drains of the plurality of 15FETs arranged in the negative column are connected in common, and each source is opened and closed by the switch 6 to sequentially measure each one.
このようにして−列のテストが終了したら次の列へ移る
。In this way, when the test for a column is finished, move on to the next column.
第２因はサファイア基板ｌ上の１ｓＦＥＴ２ と特性評
価装置との配置を模式的に示したものである。The second factor schematically shows the arrangement of the 1sFET2 on the sapphire substrate l and the characteristic evaluation device.
液体を含浸した多孔性物質３の内部に電極５が配置され
、多孔性物質３が１８ＦＥＴ ２の感応部に接触してい
る。またプローブ４が１８１；’ｇＴ２の電極に接して
いる。An electrode 5 is placed inside a porous material 3 impregnated with liquid, and the porous material 3 is in contact with the sensitive part of the 18FET 2. Further, the probe 4 is in contact with the electrode 181;'gT2.
この様にしてｐＨ６，８６の出力をテストした後で別の
ｐＨ緩衝液を順次使うこきによってｐＨ依存性が検討で
きる。また、この場合溶液として例えば１モルのＫＣＪ
を使用しソース・ドレインヲ短絡して、例えば３Ｖ程の
一定電圧を加え、さらに特性評価手段７を微小電流計と
すれば、この系を絶縁リークテスト系Ｉこ応用できる。After testing the output at pH 6 and 86 in this way, pH dependence can be investigated by sequentially using different pH buffers. In this case, for example, 1 mol of KCJ is added as a solution.
This system can be applied to an insulation leak test system by short-circuiting the source and drain, applying a constant voltage of, for example, 3 V, and using a minute ammeter as the characteristic evaluation means 7.
さらに、先に述べた論文の様にウェハ状で多量のバイオ
センサを製作した場合も同じ装置を使用して、前記多孔
性物質２にバイオセンサの酵素が作用する基質溶液をし
み込ませる事でバイオセンサのウェハ状態での検討が容
易に実現できることは言うまでもない。Furthermore, even when a large number of biosensors are manufactured in the form of wafers as in the paper mentioned above, the same device can be used to impregnate the porous material 2 with a substrate solution on which the enzyme of the biosensor acts. Needless to say, it is easy to study the sensor in a wafer state.
（発明の効果）
以上述べたとおり、本発明による装置を用いることによ
って半導体イオンセンサそウェハから切り離すことなく
、迅速に特性評価を行うことができる。(Effects of the Invention) As described above, by using the apparatus according to the present invention, characteristics can be quickly evaluated without separating the semiconductor ion sensor from the wafer.
【図面の簡単な説明】
第１図は本発明の一実施例を示す全体構成図、第２図は
多孔性物質と１８１Ｔとの配置を示す模式図である。
図にお−て、
１はサファイア基板、 ２はｌ５ＦＥＴ、３は多孔性
物質、 ４はプローブ、 ５は電極％ ６はスイ
ッチ、 ７は特性評価手段をそれぞれ示す。
丈 辱BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an overall configuration diagram showing an embodiment of the present invention, and FIG. 2 is a schematic diagram showing the arrangement of a porous material and 181T. In the figure, 1 is a sapphire substrate, 2 is an 15FET, 3 is a porous material, 4 is a probe, 5 is an electrode, 6 is a switch, and 7 is a characteristic evaluation means. Length humiliation
Claims (1)
物質と、少なくとも一対のプローブと、前記電極とプロ
ーブに接続する特性評価手段とを備えたことを特徴とす
る半導体イオンセンサの特性評価装置。Characteristic evaluation of a semiconductor ion sensor, comprising: a porous material impregnated with a liquid and having an electrode disposed therein; at least a pair of probes; and a characteristic evaluation means connected to the electrode and the probe. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61070151A JPS62225939A (en) | 1986-03-27 | 1986-03-27 | Characteristic evaluator for semiconductor ion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61070151A JPS62225939A (en) | 1986-03-27 | 1986-03-27 | Characteristic evaluator for semiconductor ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62225939A true JPS62225939A (en) | 1987-10-03 |
| JPH0554907B2 JPH0554907B2 (en) | 1993-08-13 |
Family
ID=13423291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61070151A Granted JPS62225939A (en) | 1986-03-27 | 1986-03-27 | Characteristic evaluator for semiconductor ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62225939A (en) |
-
1986
- 1986-03-27 JP JP61070151A patent/JPS62225939A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0554907B2 (en) | 1993-08-13 |
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