JPS62224097A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS62224097A JPS62224097A JP61069255A JP6925586A JPS62224097A JP S62224097 A JPS62224097 A JP S62224097A JP 61069255 A JP61069255 A JP 61069255A JP 6925586 A JP6925586 A JP 6925586A JP S62224097 A JPS62224097 A JP S62224097A
- Authority
- JP
- Japan
- Prior art keywords
- solder material
- optical fiber
- substrate
- meshy
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 230000003287 optical effect Effects 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 27
- 239000013307 optical fiber Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 238000012544 monitoring process Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 22
- 238000005476 soldering Methods 0.000 description 13
- 229910052742 iron Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光半導体素子と光ファイバーからなる光半導
体装置の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of an optical semiconductor device comprising an optical semiconductor element and an optical fiber.
従来、この種の光半導体装置は、光半導体素子を固定し
た基板上で予じめその周囲を金属被膜した光ファイバー
？該光半導体素子との光学結合を最適にする位置に調整
し、その最適状態を維持するため、半田材等を用いて、
該基板に固定する構成となっていた。Conventionally, this type of optical semiconductor device consists of an optical fiber whose periphery is coated with metal in advance on a substrate on which an optical semiconductor element is fixed. In order to adjust the position to optimize the optical coupling with the optical semiconductor element and maintain the optimal state, use a solder material etc.
It was configured to be fixed to the substrate.
〔発明が解決し工５とする問題点〕
上述した従来の光半導体装置の構成では、光半導体素子
を固定した基板に光ファイバーに固定する際、半田ゴテ
を用いて、半田材を溶融させた状態で光ファイバーを最
適状態に調整し、半田ゴテをゆツくり離していって、光
ファイバーを安定に固定する方法をとっている。この方
法に？いては。[Problems to be Solved by the Invention and Problem 5] In the configuration of the conventional optical semiconductor device described above, when fixing the optical fiber to the substrate on which the optical semiconductor element is fixed, a soldering iron is used to melt the solder material. The method used is to adjust the optical fiber to its optimal condition and then slowly release the soldering iron to securely fix the optical fiber. In this way? Yes.
半田材を溶融させた状態で、半田ゴテを離すとき。When releasing the soldering iron while the solder material is melted.
半田材の表面張力にＬって、半田材が半田ゴテの移動方
向に引張られる現象が生じ、このため、予じめ光半導体
素子に対して最適位置に調整してあった光ファイバーが
微少に移動することがわかった。この微少な移動は、半
導体レーザと単一軸モード７アイパー’ｌ結合させる光
半導体装置において特に悪い結果をもたらし、所定の結
合効率が得られないと同時に作製された半導体装置の信
頼性が低いという欠点を有していた。Due to the surface tension of the solder material, a phenomenon occurs in which the solder material is pulled in the direction of movement of the soldering iron, and as a result, the optical fiber, which has been adjusted in advance to the optimum position relative to the optical semiconductor element, moves slightly. I found out that it does. This minute movement brings about particularly bad results in optical semiconductor devices that couple with a semiconductor laser in a single-axis mode 7 eye per'l, and has the disadvantage that a predetermined coupling efficiency cannot be obtained and at the same time the reliability of the fabricated semiconductor device is low. It had
本発つ１の光半導体装置は、少な（とも光半導体素子と
光ファイバーとからなり、予じめその周囲を金属被膜し
た光ファイバーｔ、前記半導体素子を固定しである基板
上で、半田材で固定する部分を覆う工５に、半田材にな
じみやすい材料からなる網目状又は縞状の覆いを前記基
板に取付けることに裏って、前述の欠点？なくしている
。The first optical semiconductor device of the present invention consists of a small number of optical semiconductor elements and an optical fiber, the optical fiber t whose periphery is coated with metal in advance, and the semiconductor element is fixed on a substrate with a solder material. The above-mentioned disadvantages are eliminated by attaching a mesh or striped cover made of a material that is easily compatible with solder to the substrate as part of the covering process 5.
次に本発明についてｌ！？Ｊ面を参照して説明する。 Next, about the present invention! ? This will be explained with reference to the J side.
本発明の光半導体装置は、光半導体素子として半導体レ
ーザを用いた場合に、もっとも大きな効果を発揮するの
で、半導体レーザを用いた場合を中心に説明する。Since the optical semiconductor device of the present invention exhibits the greatest effect when a semiconductor laser is used as the optical semiconductor element, the case where a semiconductor laser is used will be mainly described.
第１図は１本発明の実施例の模型的斜視図である。半導
体レーザ１１は基板１３に融着固定しである。予じめそ
の周囲を金属被膜した光ファイバー１２は、網目状又は
縞状の覆い１４の中を通して、半導体レーザ１１の出射
端に対向している。FIG. 1 is a schematic perspective view of an embodiment of the present invention. The semiconductor laser 11 is fused and fixed to the substrate 13. The optical fiber 12 whose periphery has been coated with metal in advance passes through a mesh-like or striped cover 14 and faces the emission end of the semiconductor laser 11 .
網目状又は縞状の覆い１４は、半田材になじみやすい材
料でつ（られてＳす、基板１３にとりつけである。半導
体レーザ１１の背後には光出力をモニターするための受
光素子１６が配置してあり。The mesh or striped cover 14 is made of a material that is compatible with solder and is attached to the substrate 13. A light receiving element 16 for monitoring the optical output is arranged behind the semiconductor laser 11. Yes.
基板１３とともに同一補助基板１７を介して、サーモ・
エレクトリック−クーラ（以下Ｔ、Ｅクーラと呼ぶ）１
８に融潰しである。これらの素子はデエアルーインーラ
イン（ＤＩＰ）パッケージ１９に実装されて８す、使い
易い構造になっている。光ファイバー１２は、ハーメチ
ックシールされた貫通部２（ｌ介して外部に取出されて
いる。Along with the substrate 13, the thermoelectric
Electric cooler (hereinafter referred to as T and E cooler) 1
It is melted and crushed at 8. These elements are mounted in a de-air-in-line (DIP) package 19, providing an easy-to-use structure. The optical fiber 12 is taken out to the outside through a hermetically sealed penetration part 2 (1).
ＤＩＰパッケージには、複数本のリード２１がとりつけ
である。A plurality of leads 21 are attached to the DIP package.
第２図は１本発明の詳細な説明するための、模型的軸断
面図で、光７アイパー１２の取付は部分の一断面を示す
。筆１図で＆１図示していないが。FIG. 2 is a schematic axial sectional view for explaining the present invention in detail, and shows a section of the part where the optical 7 eyeper 12 is attached. Although the &1 drawing is not shown in the brush 1 drawing.
光ファイバー１２は、網目状又は縞状の覆い１４の中を
通して、その周囲を、半田材１５で囲まれている。２２
は半田ゴテを示して２９半田材１５を溶融させ軟かい状
態で、光フアイバー１２ｔマニユ°ビニレータ（図示せ
ず）を用いて微調整し。The optical fiber 12 passes through a mesh-like or striped cover 14 and is surrounded by a solder material 15 . 22
29 shows a soldering iron, the solder material 15 is melted, and in a soft state, it is finely adjusted using a 12-ton optical fiber manifold (not shown).
光ファイバー１２への光結合を最大にする。このとき光
ファイバー１２が単一軸モードファイバーの場合には、
光軸と垂直面内での調整範囲は極めて狭く１通常最適値
±１μｍ程度以下にする必要がある。この微妙な調整は
半田ゴテ２２′％：半田材１５から遠ざけることに１っ
て、半田材１５を低温硬化させる場合にも維持しなけれ
ばならない。Optical coupling to optical fiber 12 is maximized. At this time, if the optical fiber 12 is a single-axis mode fiber,
The adjustment range in the plane perpendicular to the optical axis is extremely narrow and needs to be within the normal optimum value of about ±1 μm. This delicate adjustment must be maintained even when the solder material 15 is cured at a low temperature by keeping the soldering iron 22'% away from the solder material 15.
従来の構成によると、光ファイバー１２を覆５３網目状
又は縞状の覆い１４が無いため、半田材１５を溶融させ
ている半田ゴテ２２Ｙ上方に離していくと、半田材１５
の表面張力に工って、半田材１５が半田ゴテ２２の移動
方向に引張られ、この力によって、予じめ微調整した光
ファイバ１２が同一方向にわずかに移動することがわか
った。According to the conventional configuration, since the optical fiber 12 is moved away from the soldering iron 22Y where the soldering material 15 is melted because the covering 53 does not have the mesh-like or striped covering 14, the soldering material 15
It has been found that the solder material 15 is pulled in the moving direction of the soldering iron 22 due to the surface tension of the soldering iron 22, and this force causes the optical fiber 12, which has been finely adjusted in advance, to move slightly in the same direction.
このため半田材１５が硬化したあとの光ファイバー１２
の結合効率は期待直重９悪くかつバラツキが大きくなり
、この工程の歩留りは４０％以下と極めて低い値であっ
た。Therefore, after the solder material 15 has hardened, the optical fiber 12
The expected normal weight was 9, and the coupling efficiency was poor and the variation was large, and the yield of this process was extremely low at 40% or less.
本発明による構成に８いては、溶融した半田材１５の中
に半田材になじみやすい材料からなる網目状又は縞状の
覆い１４が取付ゆであるため、半田ゴテ２２を上部に移
動させる際に半田材１５を引張る力は、覆い１４に工っ
て緩和され、光ファイバー１２の移動量は、著しく減少
し、この工程の歩留りは、約７０％と、従来の方法に比
らべ。In the structure 8 according to the present invention, since the mesh-like or striped cover 14 made of a material that is easily compatible with the solder material is attached to the molten solder material 15, the soldering iron 22 can be moved upwardly. The force that pulls the material 15 is alleviated by modifying the cover 14, and the amount of movement of the optical fiber 12 is significantly reduced, and the yield of this process is about 70%, compared to the conventional method.
はぼ２倍の値が得られることがわかった。It turns out that the value is about twice as high.
以上説明した工５に本発明は、半田材になじみや丁い材
料からなる網目状又は縞状の覆いＶ、＊付けることに工
って、予じめ微調整した光フアイバー全半田材を低温硬
化させて固定させる隣の移動量を著しく低減させ、この
工程での歩留を従来の約２倍にできる効果がある。In order to solve the above-described process 5, the present invention applies a net-like or striped covering V,* made of a flexible or thin material to the solder material, and applies the pre-adjusted optical fiber whole solder material to the solder material at a low temperature. It has the effect of significantly reducing the amount of movement of the adjacent material to be cured and fixed, and making it possible to approximately double the yield in this process compared to the conventional method.
第１図は本発明の一実施例の模型的斜視図、第２図は本
発明の詳細な説明するための模型的軸断面図である。
１１・・・・・・半導体レーザ、１２・・・・・・光フ
ァイバー。
１３・・・・・・基板、１４・・・・″・網目状又は縞
状の覆い。
１５・・・・・・半田材、１６・−・・・・モニター用
受光素子。
１７・・・・・・補助基板、１８・・・・・・サーモ・
エレクトリック−クーラー、１９・・・・・・デユアル
ーイン−ライン・パッケージ、２０・・・・・・貫通部
、２１・・・・・・ＩＪ−ド、２２・・・・・・半田ゴ
テ。
代理人 弁理士 内 原 晋 ４゛；１、’：’
７ ：
第 ／Ｉ！ｆ
茅 ２ 百FIG. 1 is a schematic perspective view of an embodiment of the present invention, and FIG. 2 is a schematic axial sectional view for explaining the present invention in detail. 11... Semiconductor laser, 12... Optical fiber. 13...Substrate, 14...''Mesh-like or striped cover. 15...Solder material, 16...Monitor light-receiving element. 17... ...Auxiliary board, 18...Thermometer
Electric cooler, 19... Dual-in-line package, 20... Penetration portion, 21... IJ-do, 22... Soldering iron. Agent Patent Attorney Susumu Uchihara 4゛;1,':'
7: No./I! f grass 2 hundred
Claims (1)
体装置において、予じめその周囲を金属被膜した該光フ
ァイバーを該光半導体素子を固定した基板上で、半田材
で固定する部分を覆るように半田材になじみやすい材料
からなる網目状又は縞状の覆いを該基板に取付けたこと
を特徴とする光半導体装置。In an optical semiconductor device consisting of at least an optical semiconductor element and an optical fiber, the optical fiber, the periphery of which is coated with metal in advance, is placed on a substrate to which the optical semiconductor element is fixed, and is fitted with solder material so as to cover the part to be fixed with solder material. 1. An optical semiconductor device characterized in that a mesh-like or striped cover made of a flexible material is attached to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61069255A JPS62224097A (en) | 1986-03-26 | 1986-03-26 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61069255A JPS62224097A (en) | 1986-03-26 | 1986-03-26 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62224097A true JPS62224097A (en) | 1987-10-02 |
Family
ID=13397432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61069255A Pending JPS62224097A (en) | 1986-03-26 | 1986-03-26 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62224097A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5793914A (en) * | 1995-08-21 | 1998-08-11 | Nec Corporation | Optical module & method for manufacturing the same |
-
1986
- 1986-03-26 JP JP61069255A patent/JPS62224097A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5793914A (en) * | 1995-08-21 | 1998-08-11 | Nec Corporation | Optical module & method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6318910B1 (en) | Method for hermetically sealing optical fiber introducing section and hermetically sealed structure | |
| US5998862A (en) | Air-packed CCD images package and a mold for manufacturing thereof | |
| JPS62224097A (en) | Optical semiconductor device | |
| JPS5947789A (en) | Photo semiconductor module equipped with optical fiber | |
| JPH05110203A (en) | Semiconductor laser device and its production | |
| JPS6120912A (en) | Coupling device between light emitting element and optical fiber | |
| US6947229B2 (en) | Etalon positioning using solder balls | |
| JPS62141507A (en) | Optical integrated circuit and its production | |
| JPH0772352A (en) | Structure for packaging flip-chip of optical semiconductor element | |
| JPS61224471A (en) | Chip carrier | |
| JPH04243181A (en) | Semiconductor laser module | |
| JPS62276890A (en) | Electronic component | |
| JP2513134B2 (en) | Chip on carrier | |
| JP2855980B2 (en) | Thermoelectric cooling module and cooled semiconductor laser module | |
| JPS62278512A (en) | Photosemiconductor device | |
| JPS6026909A (en) | Semiconductor laser device with optical fiber and its production | |
| JPS62139366A (en) | Semiconductor device for optical communications | |
| JP2786325B2 (en) | Optical semiconductor module | |
| JP2968550B2 (en) | Airtight structure of optical module | |
| JPS61112108A (en) | Light emitting element module | |
| JPS61206283A (en) | Optical coupling device | |
| JP2613879B2 (en) | Light receiving module | |
| JPH04186788A (en) | Semiconductor laser device | |
| JPS60263427A (en) | Manufacture of semiconductor device | |
| JPS61138219A (en) | Semiconductor laser device |