JPS62217206A - Production of optical waveguide - Google Patents
Production of optical waveguideInfo
- Publication number
- JPS62217206A JPS62217206A JP5942286A JP5942286A JPS62217206A JP S62217206 A JPS62217206 A JP S62217206A JP 5942286 A JP5942286 A JP 5942286A JP 5942286 A JP5942286 A JP 5942286A JP S62217206 A JPS62217206 A JP S62217206A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optical waveguide
- pattern
- waveguide
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010410 layer Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000012792 core layer Substances 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 16
- 238000005253 cladding Methods 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 238000001020 plasma etching Methods 0.000 abstract description 6
- 239000010453 quartz Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910006113 GeCl4 Inorganic materials 0.000 abstract 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 235000014121 butter Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光通信システム、光情報処理の多様化、高度
化に必要不可欠な、光カツプラ−、光合波・分波器など
の光部品の経済化、小型化、安定化に有利な光導波路の
製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to optical components such as optical couplers, optical multiplexers and demultiplexers, which are essential for the diversification and advancement of optical communication systems and optical information processing. The present invention relates to a method of manufacturing an optical waveguide that is advantageous for economicalization, miniaturization, and stability.
従来の光部品は、プリズム等の微小光学部品からな沙、
光軸合せ、組立てが困難であった。Conventional optical components range from microscopic optical components such as prisms,
Optical axis alignment and assembly were difficult.
そこで、平面上に光導波路を作成することによシ、これ
らの繁雑な作業を避けるように、種々の導波路が提案さ
れてきた。Therefore, various waveguides have been proposed in order to avoid these complicated operations by creating an optical waveguide on a plane.
光導波路に用いられる材料には、例えば半導体結晶、誘
電体結晶、ガラス、高分子材料などがある。これらの材
料により光導波路を作成するには、基板（クラッドを兼
ねてもよい）上にコア層及びクラッド層を形成した後に
、エツチング法、露光法等により＠３図に示すような構
造を作成し、光のとじ込めを行う。なお第５図中、６は
基板（もしくけクラッド）、１０はコア層、１１はクラ
ッド層をあられす。Examples of materials used for optical waveguides include semiconductor crystals, dielectric crystals, glass, and polymer materials. To create an optical waveguide using these materials, a core layer and a cladding layer are formed on a substrate (which may also serve as a cladding), and then a structure as shown in Figure 3 is created using an etching method, exposure method, etc. and locks in the light. In FIG. 5, numeral 6 indicates a substrate (a cladding), numeral 10 a core layer, and numeral 11 a cladding layer.
ところで、これらのコア層、クラッド層形成には、従来
、ＣＶＤ法や火炎直接堆積法が用いられてきた。By the way, the CVD method and the flame direct deposition method have conventionally been used to form these core layers and cladding layers.
ＣＶＤ法とは、第４図にその概略説明図と示すように、
石英ガラス製の炉心管２′のガス入口４′より、ガラス
原料のハロゲン化物ガスおよび反応用ガス例えばＥＨＯ
１４、ＴｉＣ４、Ｏ！等を導入し、酸化反応によりガラ
ス微粒子を合成し、ホルダー１′上の基板６′上に該合
成ガラス微粒子を堆積させる方法で、反応温度は最高部
で１２００℃程度で、炉３′によシ温度勾配を持たせる
ことで、熱泳動効果によりガラス微粒子の堆積が促進さ
れる。５′は排気系を示す。The CVD method is as shown in the schematic diagram in Figure 4.
From the gas inlet 4' of the quartz glass furnace tube 2', a halide gas as a glass raw material and a reaction gas such as EHO are introduced.
14, TiC4, O! In this method, fine glass particles are synthesized by an oxidation reaction, and the synthetic glass particles are deposited on the substrate 6' on the holder 1'. By providing a temperature gradient, the deposition of glass particles is promoted due to the thermophoretic effect. 5' indicates an exhaust system.
火炎直接堆積法とは、＠５図に示すように、石英ガラス
基板６′をターンテーブル１３上に回転中心から等距離
の位置に配置し、ガラス原料Ｂ１０１４ 、 Ｔｉ（
：！４等は同心円状ノズルを有するガラス微粒子合成用
トーチ１４に導入され、予め形成されている酸水素フレ
ーム１５中で、火炎加水分解反応によりガラス微粒子を
合成し、合成したガラス微粒子はフレーム直下を移動し
ている基板６′上に堆積させる方法である。ガラス微粒
子油漬膜厚の均一化を図るため、トーチ１４をターンテ
ーブル１３０半径方向に往復運動させる。In the flame direct deposition method, as shown in Figure @5, a quartz glass substrate 6' is placed on a turntable 13 at a position equidistant from the center of rotation,
:! The 4th grade is introduced into a glass fine particle synthesis torch 14 having a concentric nozzle, and glass fine particles are synthesized by a flame hydrolysis reaction in a pre-formed oxyhydrogen frame 15, and the synthesized glass fine particles move directly under the frame. This is a method in which the film is deposited on a substrate 6' that is In order to make the thickness of the oil-soaked glass particles uniform, the torch 14 is reciprocated in the radial direction of the turntable 130.
〔発明が解決しようとする問題点］
しかしながら、上記のＣＶＤ法、火炎直接堆積法等の従
来技術では、堆積時のガス流星のゆらぎによりガラスの
屈折率が変化するとか、膜厚の不均一性のために伝搬損
失が増加するという欠点があった。[Problems to be Solved by the Invention] However, with conventional techniques such as the above-mentioned CVD method and flame direct deposition method, the refractive index of the glass changes due to fluctuations of gas meteors during deposition, and non-uniformity of the film thickness occurs. This has the drawback of increasing propagation loss.
また、従来法ではいずれも石英（ｓｉｏ！ ） をエ
ツチングして、石英の導波路パターンを形成していたが
、石英のエチング速度は遅く、そのため加工に長時間を
要していた。In addition, in all conventional methods, quartz (sio!) is etched to form a quartz waveguide pattern, but the etching speed of quartz is slow and therefore requires a long time to process.
本発明はこのような従来技術の欠点を解消し、低損失な
光導波路を容易に製造できる新規な方法を提供せんとす
るものである。The present invention aims to eliminate these drawbacks of the prior art and provide a new method for easily manufacturing a low-loss optical waveguide.
本発明者らは、Ｓｉｎ！ よりもＳｌの方がパターン
形成が容易な点に着目し、従来の基板上に５１０２
を堆積し、これをエツチングする方法にかえて、まず８
１層を形成しておき、これに導波路となるバター／を形
成した後、このパターン形成したＳｉ層を酸化してＥｌ
ｉＯ，層とすることで、上記した欠点を解決できること
を見出し、本発明に到達した。The inventors of the present invention believe that Sin! Focusing on the fact that pattern formation is easier with Sl than with 5102
Instead of depositing and etching this, first
After forming one layer and forming a butter layer that will become a waveguide on this layer, this patterned Si layer is oxidized to form El.
It was discovered that the above-mentioned drawbacks could be solved by using an iO layer, and the present invention was achieved.
すなわち本発明は幕板上に光導波路を作成するに督いて
、＋３１ を主成分とする序ト形成し、［Ｓｉを主成分
とする層に導波路となるパターンを形成した後、該ｓ１
を酸化することにより５１０２ とする、ことを特
徴とする光導波路の製造方法に関する。また本発明は第
２の発明として、基板上に光導波路を作成するにおいて
、＋３１を主成分とする層を形成し、ｉｓｌ を主成分
とする層に導波路となるパターンを形成した後、該Ｓｉ
を酸化することにより＋３１０！ とじ、かつ、
コア層又はクラッド層の屈折率分布は上記Ｓｉを主成分
とするＪＸ４形成時に添加剤を加えることにより形成す
ることを特徴とする先導波路の製造方法にも関する。That is, in the present invention, while creating an optical waveguide on a curtain plate, a layer containing +31 as the main component is formed, and [after forming a pattern to become a waveguide on a layer containing Si as a main component, the s1
5102 by oxidizing the optical waveguide. In addition, the present invention provides a second aspect of the present invention, in which an optical waveguide is created on a substrate, after forming a layer containing +31 as a main component and forming a pattern to become a waveguide on the layer containing isl as a main component. Si
+310 by oxidizing! Binding and
The present invention also relates to a method for manufacturing a guided waveguide, characterized in that the refractive index distribution of the core layer or cladding layer is formed by adding an additive during the formation of JX4 mainly composed of Si.
本発明を第１図及び第２図に示す一実施態様に基いて説
明する。第１図はＳｌ 層の形成に用いる装置の概略説
明図であって、１はサセプター、２け反応管、５は電気
ヒーター、４はｓｉ層形成用原料導入口、５は排気口、
６は基板をあられす。サセプター１上に基板６を載置し
て、反応管２の中に入れ、原料導入口４から８１層形成
用原料ガスを導入し基板上ＫＳｉ層を形成する。このよ
うな原料ガスとしてけｓｌのハロゲン化物又はハイドラ
イド、例えばＢ１ａｔ４゜８１Ｈ４ｅ ８１１ Ｈ６
等を用いることが好ましい。The present invention will be explained based on one embodiment shown in FIGS. 1 and 2. FIG. 1 is a schematic explanatory diagram of the apparatus used for forming the SI layer, in which 1 is a susceptor, 2 reaction tubes, 5 are electric heaters, 4 is a raw material inlet for forming an SI layer, 5 is an exhaust port,
6 will hail the board. A substrate 6 is placed on the susceptor 1 and put into the reaction tube 2, and a raw material gas for forming the 81st layer is introduced from the raw material inlet 4 to form a KSi layer on the substrate. Such raw material gases include sl halides or hydrides, such as B1at4゜81H4e 811 H6
It is preferable to use the following.
またコア層もしくけクラッド層となるべきＳｉ 層形成
の際に、Ｇ ｓ Ｏｔ４等の屈折率変化用添加剤原料を
混合して屈折率分布をつけてもよい。Furthermore, when forming the Si layer to become the core layer or the cladding layer, a refractive index distribution may be imparted by mixing an additive material for changing the refractive index such as G s Ot4.
形成される８１５は結晶であってもアモルファスであっ
てもよく、含Ｓｉガスの熱反応により堆積速度が決まっ
てくるので、膜厚成長速度制御が容易で膜厚の均一性が
向上する。The formed 815 may be crystalline or amorphous, and the deposition rate is determined by the thermal reaction of the Si-containing gas, making it easy to control the film thickness growth rate and improve the uniformity of the film thickness.
なお、基板６としては、８１ 、 ５ｉ０２ 等平面
なものであ゛ればよい。It should be noted that the substrate 6 only needs to have a plane of 81 and 5i02.
第２図は表面にＳｉ層を形成した基板から光導波路を作
成する工程の説明図である。第１図の装置を用い、前記
した方法にて、基板６上に、コアとなるべき８１層７及
びクラッドとなるべき８１層８を形成する〔第２図（ａ
）工程〕。次にレジスト９を用いて導波路パターンを形
成する〔同図（ｂ’）工程〕。続いてＳｉ層をエツチン
グして、コアとなるべき８１層７、クラッドとなるべき
ｓｉ／ｆｉｓからなるパターンを形成する〔同図（Ｃ）
工程〕。FIG. 2 is an explanatory diagram of the process of creating an optical waveguide from a substrate on which a Si layer is formed. Using the apparatus shown in FIG. 1 and the method described above, an 81-layer 7 that will become the core and an 81-layer 8 that will become the cladding are formed on the substrate 6 [FIG. 2 (a)
) process]. Next, a waveguide pattern is formed using resist 9 [step (b') in the same figure]. Next, the Si layer is etched to form a pattern consisting of the 81 layer 7 that will become the core and the si/fis that will become the cladding [Figure (C)]
process].
このときのエツチング方法としては、例えば反応性イオ
ンエツチング、反応性イオンビームエツチング、イオン
エツチング、プラズマエツチング、マグネトロンイオン
エツチング等を用いることができる。As the etching method at this time, for example, reactive ion etching, reactive ion beam etching, ion etching, plasma etching, magnetron ion etching, etc. can be used.
次に、再び第１図の装置を用いて、８１層分酸化してＳ
ｉ０： とし、バタン形成されたコア層１０、クラッ
ド層１１を得る〔同図（ａ）工程〕。Next, using the apparatus shown in Figure 1 again, 81 layers were oxidized and S
i0: Then, a core layer 10 and a cladding layer 11 are obtained which have been formed with a button [step (a) in the same figure].
なお、形成されたＳｉ層を酸化するにけＨ，０又はＯ，
ト用いる。さらにクラッド層１２となる８１０ｔ を
堆積して光導波路とする〔同図（ｅ）工程〕。In addition, to oxidize the formed Si layer, H, 0 or O,
Use Furthermore, 810t, which will become the cladding layer 12, is deposited to form an optical waveguide [step (e) in the same figure].
以上の如く本発明では、Ｓｉ 層を形成し、該８１ 層
にパターン形成をした後、このＳｌ を酸化してＳｉ０
！ にするだめ、極めて低損失な光導波路の形成が実現
できる。従来の技術では堆積時のガスｉ、ｉのゆらぎに
よシ屈折率が変化するとか、膜厚の不均一性のために伝
搬損失が増加するという欠点があったが、本発明ではｉ
′ｒ１′５厚、組成制御の容易なＳｌ を堆積した後に
このＳｌを酸化することにより上記の欠点？抑えること
かできる。As described above, in the present invention, after forming a Si layer and forming a pattern on the 81 layer, this Si is oxidized to form an Si0 layer.
! By doing so, it is possible to form an optical waveguide with extremely low loss. Conventional techniques had drawbacks such as the refractive index changing due to fluctuations in gas i during deposition and propagation loss increasing due to non-uniformity of the film thickness, but the present invention
By depositing Sl, whose composition can be easily controlled, and then oxidizing this Sl, the above disadvantages can be overcome. It can be suppressed.
本発明ではまずＳｉ 層をエツチングにより加工して導
波路のパターンを形成するため、高速の加工が容易に行
うことができる。従来の技術ではＳｉ０！ 全形成し
た債に、エツチングによる導波路パターンを作るために
加工時間がかかるという欠点があった。例えばＳｉ０！
の反応性イオンエツチング速度は、ガス条件ＣＦ４（
９ａ％）Ｈ！（１０％）で６００ Ａ ／ ｍｉｎであ
るに対し、Ｓｌ の反応性イオンエツチング速度は、ガ
ス条件ＣＰ、（９５％）０．（５％）ｆ、５ｏｏｏＸ／
ｍｉｎと、はるかにエツチング速度が大である。In the present invention, since the Si layer is first processed by etching to form a waveguide pattern, high-speed processing can be easily performed. With conventional technology, Si0! The disadvantage of the fully formed bond is that it takes a long processing time to create the waveguide pattern by etching. For example, Si0!
The reactive ion etching rate of gas condition CF4 (
9a%) H! The reactive ion etching rate of Sl is 600 A/min at gas condition CP, (95%) 0. (5%) f, 5oooX/
The etching speed is much higher.
このように本発明では、Ｓｉｎ、 よシ加工速度の早
いＳｌ を加工することで上記の欠点を抑えることが
できる。As described above, in the present invention, the above-mentioned drawbacks can be suppressed by processing Sin and Sl, which has a faster processing speed.
第１図の装置のサセプター１に５０１角の石英基板を１
ｉ１ｅし、温度１ｏｏｏｃ４ｃて、５ｉＣｔ４５０ ａ
ｃｅ／分を導入し、厚さ０．５μｍのクラッドとなるＳ
ｉ層を形成した。次にｓｉ ｃ ｔ４およびＱ ｅ ０
１４を夫々５ｏｏｃｃ／分、３０ＣＣ／分の条件にて導
入し、厚さ４．５μｍのコアとなるＳｉ 、層を形成し
た（第２図参照）。One 501 square quartz substrate is placed in the susceptor 1 of the device shown in Figure 1.
i1e, temperature 1oooc4c, 5iCt450a
ce/min, resulting in a cladding with a thickness of 0.5 μm.
An i-layer was formed. Then sic t4 and Q e 0
No. 14 was introduced under the conditions of 5 oocc/min and 30 cc/min, respectively, to form a Si layer serving as a core with a thickness of 4.5 μm (see FIG. 2).
次に導波路パターンをホトレジスト（ＡＺ−１３５０、
Ｔ）を用いて厚さ１．５μｍつけた。その後、反応性イ
オンエツチング装置を用りて８１層をエツチングし、Ｓ
ｌのクラッド・コア層からなるパターンを形成した。こ
の時の条件はＣＦ４およびＨ，を１９ＣＣ／分、１ａ／
分流し真空度け１０Ｐａ とした。このパターン形成
に要した時間は１０分であった。Next, the waveguide pattern was coated with photoresist (AZ-1350,
T) to a thickness of 1.5 μm. After that, 81 layers were etched using a reactive ion etching device, and S
A pattern consisting of 1 clad core layer was formed. The conditions at this time were CF4 and H, 19CC/min, 1a/min.
Diversion vacuum level was set to 10 Pa. The time required for this pattern formation was 10 minutes.
次に再び第１図と同様の装ｊ市を用いて、上記で得られ
た、攪層物を温度１２００℃まで加熱し、ＨＩ３２００
Ｏ７分を装置内に導入してＳｉ 層を酸化した。この酸
化によりクラッド層は約１μｍ１コア層け１０層ｍにな
った。さらにクラッド層Ｂ１０！ を堆積して光のと
じ込めを良くした結果、光導波路のロスＱ ［１２ｄ、
Ｂ／ｍと低損失なものであった。Next, using the same container as in FIG. 1 again, the stirred layer obtained above was heated to a temperature of 1200°C, and
7 minutes of O was introduced into the apparatus to oxidize the Si layer. As a result of this oxidation, the cladding layer had a thickness of about 1 μm and 1 core layer and 10 layers. Furthermore, cladding layer B10! As a result of depositing and improving light confinement, the loss Q of the optical waveguide [12d,
It had a low loss of B/m.
本発明の方法は次のような効果を奏する。 The method of the present invention has the following effects.
（１） ８１０１ に比べてＳｉ のＣＶＤ法によ
る形成は含Ｓｉガスの熱反応により堆積速度が決まって
くるために、膜厚の均一性が上がり、膜成長速度の制御
性が高くなる。(1) Compared to 8101, when Si is formed by the CVD method, the deposition rate is determined by the thermal reaction of the Si-containing gas, so the uniformity of the film thickness is improved and the controllability of the film growth rate is improved.
（２１Ｓｉの酸化により形成される模はＳｉｎ、で、８
１：０＝１８２のストイキオメトリ−制御が容易なこと
から、組成、屈折率分布のコントロールが可能になる。(The pattern formed by oxidation of 21Si is Sin, and 8
Since the stoichiometry of 1:0=182 can be easily controlled, the composition and refractive index distribution can be controlled.
又、再現性も極めて高くなる。Moreover, reproducibility is also extremely high.
（３） ＋３１からＳｉ０！ になるため、高純度石
英ができるために、伝搬損失も小さく均一性も高い。(3) +31 to Si0! As a result, high purity quartz can be produced, resulting in low propagation loss and high uniformity.
（４１Ｓｉをエツチングするので、パターン形成を高速
に行うことができ、生産性に優れる。(Since 41Si is etched, pattern formation can be performed at high speed and productivity is excellent.
第１図は、本発明の実施態様を説明する概略の断面図、
第２図は、本発明の実施嬰様の各工程を説明する断面図
、
第３図は、光導波路の一例を示す断面図、第４図は、従
来法のＯＶＤ法を説明する概略の断面図、
第５図は、従来法の火炎直接堆積法を示す説明図、であ
る。FIG. 1 is a schematic cross-sectional view explaining an embodiment of the present invention, FIG. 2 is a cross-sectional view explaining each step of an embodiment of the present invention, and FIG. 3 is a cross-sectional view showing an example of an optical waveguide. 4 is a schematic cross-sectional view illustrating the conventional OVD method, and FIG. 5 is an explanatory diagram showing the conventional flame direct deposition method.
Claims (2)
成分とする層を形成し、該Ｓｉを主成分とする層に導波
路となるパターンを形成した後、該Ｓｉを酸化すること
によりＳｉＯ＿２とする、ことを特徴とする光導波路の
製造方法。(1) In creating an optical waveguide on a substrate, a layer containing Si as a main component is formed, a pattern to become a waveguide is formed on the layer containing Si as a main component, and then the Si is oxidized. A method for manufacturing an optical waveguide, characterized in that the optical waveguide is made of SiO_2.
成分とする層を形成し、該Ｓｉを主成分とする層に導波
路となるパターンを形成した後、該Ｓｉを酸化すること
によりＳｉＯ＿２とし、かつ、コア層又はクラッド層の
屈折率分布は上記Ｓｉを主成分とする層形成時に添加剤
を加えることにより形成することを特徴とする光導波路
の製造方法。(2) When creating an optical waveguide on a substrate, by forming a layer containing Si as the main component, forming a pattern to become a waveguide on the layer containing Si as the main component, and then oxidizing the Si. A method for manufacturing an optical waveguide, characterized in that SiO_2 is used, and the refractive index distribution of the core layer or cladding layer is formed by adding an additive when forming the layer containing Si as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059422A JPH079493B2 (en) | 1986-03-19 | 1986-03-19 | Method of manufacturing optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059422A JPH079493B2 (en) | 1986-03-19 | 1986-03-19 | Method of manufacturing optical waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62217206A true JPS62217206A (en) | 1987-09-24 |
| JPH079493B2 JPH079493B2 (en) | 1995-02-01 |
Family
ID=13112805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61059422A Expired - Lifetime JPH079493B2 (en) | 1986-03-19 | 1986-03-19 | Method of manufacturing optical waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH079493B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147A (en) * | 1976-06-23 | 1978-01-05 | Matsushita Electric Ind Co Ltd | Preparation of hologram recording media |
| JPS59137346A (en) * | 1983-01-27 | 1984-08-07 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of glass waveguide |
| JPS602905A (en) * | 1983-06-20 | 1985-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of diffusion type glass waveguide |
-
1986
- 1986-03-19 JP JP61059422A patent/JPH079493B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53147A (en) * | 1976-06-23 | 1978-01-05 | Matsushita Electric Ind Co Ltd | Preparation of hologram recording media |
| JPS59137346A (en) * | 1983-01-27 | 1984-08-07 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of glass waveguide |
| JPS602905A (en) * | 1983-06-20 | 1985-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of diffusion type glass waveguide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH079493B2 (en) | 1995-02-01 |
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