JPS62214650A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS62214650A JPS62214650A JP61057933A JP5793386A JPS62214650A JP S62214650 A JPS62214650 A JP S62214650A JP 61057933 A JP61057933 A JP 61057933A JP 5793386 A JP5793386 A JP 5793386A JP S62214650 A JPS62214650 A JP S62214650A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- component
- butadiene
- semiconductor device
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000003822 epoxy resin Substances 0.000 claims abstract description 53
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 53
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 21
- 229920000459 Nitrile rubber Polymers 0.000 claims abstract description 17
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 14
- 125000003277 amino group Chemical group 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims description 30
- 239000007795 chemical reaction product Substances 0.000 claims description 16
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 5
- 229920001568 phenolic resin Polymers 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 125000003700 epoxy group Chemical group 0.000 abstract description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 3
- 229920000642 polymer Polymers 0.000 abstract description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract 3
- 238000013329 compounding Methods 0.000 abstract 1
- 229920003986 novolac Polymers 0.000 description 10
- 238000007789 sealing Methods 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000001735 carboxylic acids Chemical group 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- NFVPEIKDMMISQO-UHFFFAOYSA-N 4-[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C=C1 NFVPEIKDMMISQO-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- -1 carboxy compound Chemical class 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007891 compressed tablet Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、信頼性の優れた半導体装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a highly reliable semiconductor device.
トランジスタ、ＩＣ，ＬＳＩ等の半導体素子は、通常セ
ラミックパッケージもしくはプラスチックパッケージ等
により封止され、半導体装置化されている。上記セラミ
ックパッケージは、構成材料そのものが耐熱性を有し、
耐透湿性にも優れているため、温度、湿度に対して強く
、しかも中空パッケージのため機械的強度も高く信頼性
の高い封止が可能である。しかしながら、構成材料が比
較的高価なものであることと、量産性に劣る欠点がある
ため、最近では上記プラスチックパッケージを用いた樹
脂封止が主流になっている。この種の樹脂封止には、従
来からエポキシ樹脂組成物が使用されており、良好な成
績を収めている。Semiconductor elements such as transistors, ICs, and LSIs are usually sealed with ceramic packages, plastic packages, or the like to form semiconductor devices. The above-mentioned ceramic package has heat resistance in the constituent material itself,
It also has excellent moisture permeability, so it is resistant to temperature and humidity, and because it is a hollow package, it has high mechanical strength and can be sealed with high reliability. However, since the constituent materials are relatively expensive and the mass productivity is poor, resin sealing using the above-mentioned plastic package has recently become mainstream. Epoxy resin compositions have conventionally been used for this type of resin sealing, and have achieved good results.
上記エポキシ樹脂組成物としては、特にエポキシ樹脂と
、硬化剤としてのフェノール樹脂と、その他硬化促進剤
としての２−メチルイミダゾール、弾性補強用併用樹脂
としての末端カルボン酸ブタジエン−アクリロニトリル
共重合体、無機充填剤としての溶融シリカ等の組成系で
構成されるものが、封止作業性（特にトランスファー成
形時の作業性）等に優れたものとして賞月されている。The above-mentioned epoxy resin composition includes an epoxy resin, a phenol resin as a curing agent, 2-methylimidazole as a curing accelerator, a terminal carboxylic acid butadiene-acrylonitrile copolymer as a combination resin for elastic reinforcement, an inorganic Those composed of compositions such as fused silica as a filler are praised for their excellent sealing workability (particularly workability during transfer molding).
しかしながら、半導体分野の技術革新はめざましく、最
近では、集積度の向上とともに、素子サイズの大形化、
配線の微細化が進む反面、パッケージ形状の小形化、薄
形化が進むようになっており、これに伴って、半導体素
子の封止材料においても、従来以上の低応力性、耐熱性
、耐湿性が要求されるようになっている。これまでの対
土用エポキシ樹脂組成物は、ＩＣ，、ＬＳＩ等の半導体
素子の封止材料としては充分価れているが、超ＬＳＩ等
の半導体素子の封止材料としては、充分に満足できるも
のではない。However, technological innovation in the semiconductor field is remarkable, and recently, along with improvements in the degree of integration, element sizes have become larger and
While interconnects are becoming finer, packages are becoming smaller and thinner, and along with this, encapsulation materials for semiconductor devices are also becoming more resistant to stress, heat, and moisture than ever before. Sexuality is now in demand. Conventional epoxy resin compositions for soil use have been sufficiently valued as encapsulating materials for semiconductor devices such as ICs and LSIs, but are not fully satisfactory as encapsulating materials for semiconductor devices such as VLSIs. It's not a thing.
この発明は、このような事情に鑑みなされたもので、樹
脂封止に用いるエポキシ樹脂組成物として特殊な成分組
成のものを用いることにより、超ＬＳＩ等の封止に充分
対応でき、低応力性、耐熱性、耐湿性に著しく優れた半
導体装置の提供をその目的とするものである。This invention was made in view of the above circumstances, and by using a special component composition as an epoxy resin composition used for resin sealing, it can be fully applied to the sealing of VLSIs, etc., and has low stress properties. The object of the present invention is to provide a semiconductor device having extremely excellent heat resistance and moisture resistance.
〔問題点を解決するための手段〕
上記の目的を達成するため、この発明の半導体装置は、
下記の（Ａ）〜（Ｃ）成分を含有するエポキシ樹脂組成
物を用いて半導体素子を封止するという構成をとる。[Means for solving the problem] In order to achieve the above object, the semiconductor device of the present invention has the following features:
The structure is such that a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C).
（Ａ）エポキシ樹脂。(A) Epoxy resin.
（Ｂ）ノボラック型フェノール樹脂。(B) Novolac type phenolic resin.
（Ｃ）分子鎖の両末端にカルボキシル基を有するブタジ
エン−アクリロニトリル共
重合体とアミン基を有するシリコーン
化合物との反応生成物。(C) A reaction product of a butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecular chain and a silicone compound having an amine group.
すなわち、この発明は、分子鎖の両末端にカルボキシル
基を有するブタジエン−アクリロニトリル共重合体と、
アミノ基を有するシリコーン化合物との反応生成物（Ｃ
成分）を含む特殊なエポキシ樹脂組成物によって半導体
素子を封止しており、上記Ｃ成分の樹脂応力緩和作用、
耐熱性および耐湿性向上作用等に基づき、超ＬＳＩ等の
封正に充分対応でき、低応力性、耐熱性、耐湿性等に著
しく優れた半導体装置を実現可能にするものである。That is, this invention provides a butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecular chain,
Reaction product with a silicone compound having an amino group (C
The semiconductor element is sealed with a special epoxy resin composition containing component C, and the resin stress relaxation effect of component C,
Based on the effect of improving heat resistance and moisture resistance, it is possible to realize a semiconductor device that is fully applicable to the encapsulation of ultra-LSIs, etc., and has extremely excellent low stress properties, heat resistance, moisture resistance, etc.
この発明に用いるエポキシ樹脂組成物は、エポキシ樹脂
（Ａ成分）と、ノボラック型フェノール樹脂（Ｂ成分）
と、分子鎖の両末端にカルボキシル基を有するブタジエ
ン−アクリロニトリル共重合体とアミノ基を有するシリ
コーン化合物との反応生成物（Ｃ成分）を用いて得られ
るものであって、通常、粉末状もしくはそれを打錠した
タブレット状になっている。The epoxy resin composition used in this invention comprises an epoxy resin (component A) and a novolac type phenol resin (component B).
It is obtained using a reaction product (component C) of a butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecular chain and a silicone compound having an amino group, and is usually in powder form or It is in the form of a compressed tablet.
上記エポキシ樹脂組成物のＡ成分となるエポキシ樹脂は
、１分子中に２個以上のエポキシ基を有するエポキシ化
合物であれば特に制限するものではない。すなわち、従
来から半導体装置の封止樹脂として用いられている各種
のノボラック型エポキシ樹脂が好適であり、その他、ビ
スフェノールへのジグリシジルエーテルやその多量体で
あるエピビス型エポキシ樹脂、ビスフェノールＦ型エポ
キシ樹脂、レゾルシン型エポキシ樹脂、脂環式エポキシ
樹脂等も好適なエポキシ樹脂として使用可能である。The epoxy resin serving as component A of the epoxy resin composition is not particularly limited as long as it is an epoxy compound having two or more epoxy groups in one molecule. In other words, various novolac type epoxy resins that have been conventionally used as encapsulating resins for semiconductor devices are suitable, as well as diglycidyl ether to bisphenol, epibis type epoxy resin which is a polymer thereof, and bisphenol F type epoxy resin. , resorcin type epoxy resins, alicyclic epoxy resins, etc. can also be used as suitable epoxy resins.
ノボラック型エポキシ樹脂としては、通常エポキシ当量
１６０〜２５０．軟化点５０〜１３０℃のものが用いら
れ、クレゾールノボラック型エポキシ樹脂としては、エ
ポキシ当量１７０〜２３０、軟化点６０〜１１０℃のも
のが一般に用いられる。The novolac type epoxy resin usually has an epoxy equivalent of 160 to 250. Cresol novolac type epoxy resins having a softening point of 50 to 130°C are generally used, and those having an epoxy equivalent of 170 to 230 and a softening point of 60 to 110°C are generally used.
上記エポキシ樹脂と共に用いられる、Ｂ成分のノボラッ
ク型フェノール樹脂は、上記エポキシ樹脂の硬化剤とし
て作用するものであり、なかでも、軟化点が５０〜１３
０℃、水酸基当量が８０〜１８０のものを用いることが
好ましい。The novolak type phenol resin as component B used together with the above epoxy resin acts as a curing agent for the above epoxy resin, and among them, the novolac type phenol resin has a softening point of 50 to 13.
It is preferable to use one having a temperature of 0°C and a hydroxyl equivalent of 80 to 180.
さらに、上記Ａ成分およびＢ成分とともに用いられるＣ
成分は、分子鎖の両末端にカルボキシル基を有するブタ
ジエン−アクリロニトリル共重合体と、アミノ基を存す
るシリコーン化合物との反応生成物である。この反応生
成物は、本発明者らが一連の研究の過程で見出したもの
であり、特に樹脂の応力緩和作用および耐湿性、耐熱性
等の改善に優れた効果を奏する。Furthermore, C used together with the above A component and B component
The component is a reaction product of a butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecular chain and a silicone compound having amino groups. This reaction product was discovered by the present inventors in the course of a series of studies, and is particularly effective in improving the stress relaxation effect, moisture resistance, heat resistance, etc. of the resin.
ここで、上記反応生成物の構成成分となる、アミノ基を
有するシリコーン化合物（以下「シリコーン化合物」と
略す）は、直鎖ポリオルガノシロキサンのアミン誘導体
であり、分子ｆｆｔ５００〜１００゜０００、アミン当
量５０〜５０，０００、ケイ素含有率１〜３５重量％（
以下「％」と略す）であって、末端ないしは側鎖のいず
れか一方もしくは双方に１〜５０個のアミノ基を備えて
いるものを使用することが好適である。特に、分子量１
、０００〜５０，０００、側鎖あるいは末端に１〜３
０個のアミノ基を備え、アミン当量１００〜３０，００
０、ケイ素含有量３〜３３％のものを使用することが好
結果をもたらす。Here, the silicone compound having an amino group (hereinafter abbreviated as "silicone compound"), which is a constituent component of the above reaction product, is an amine derivative of linear polyorganosiloxane, and has a molecular fft of 500 to 100°000 and an amine equivalent. 50-50,000, silicon content 1-35% by weight (
(hereinafter abbreviated as "%"), and has 1 to 50 amino groups at either the terminal or the side chain, or both. In particular, molecular weight 1
, 000-50,000, 1-3 on side chain or terminal
with 0 amino groups and amine equivalent weight 100-30,00
0. Good results are obtained by using a silicon content of 3 to 33%.
なお、上記分子量はゲルバーミエイションクロマトグラ
フによるポリスチレン換算重量平均分子量である。Note that the above molecular weight is a weight average molecular weight in terms of polystyrene determined by gel permeation chromatography.
また、上記Ｃ成分の反応生成物のもう一つの構成成分で
ある、分子鎖の両末端にカルボキシル基を有するブタジ
エン−アクリロニトリル共重合体は、分子ｉｔ１．００
０〜ｉｏ、ｏｏｏ、アクリロニトリル含有率５〜５０％
のものを使用することが好ましい。より好ましいのは、
分子ｆｆ１２．０００〜５，０００．７クリロニトリル
含有率が８〜４０％のものである。ここで、上記両末端
にカルボキシル基を有するとは、１分子当たり、平均１
．８〜２．２個のカルボキシル基を有するもののことを
いう。In addition, the butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecular chain, which is another component of the reaction product of component C, has a molecular IT of 1.00.
0-io, ooo, acrylonitrile content 5-50%
It is preferable to use More preferable is
The molecule ff is 12.000 to 5,000.7 and the crylonitrile content is 8 to 40%. Here, having a carboxyl group at both ends means that the average number of carboxyl groups per molecule is 1
．． It refers to those having 8 to 2.2 carboxyl groups.
上記Ｃ成分の反応生成物は、ブタジエン−アクリロニト
リル共重合体とシリコーン化合物とを、シリコーン化合
物のアミノ基とブタジエン−アクリロニトリル共重合体
のカルボキシル基との当量比が１０＝１〜１：１０の範
囲内になるような割合で反応させて得られたものを用い
ることが好ましい。なかでも好適なのは、４：１〜１：
４の範囲内のものである。The reaction product of the above C component is a mixture of a butadiene-acrylonitrile copolymer and a silicone compound, and the equivalent ratio of the amino group of the silicone compound to the carboxyl group of the butadiene-acrylonitrile copolymer is in the range of 10=1 to 1:10. It is preferable to use a product obtained by reacting at a ratio that satisfies the above. Among them, 4:1 to 1:
It is within the range of 4.
このようにして合成されるＣ成分の反応生成物は、一般
に、分子量１ 、０００〜１００．００で、前述のゲル
パーミエイションクロマトグラフによるポリスチレン換
算重量平均分子量（時間−吸光度曲線におけるピーク）
がそれぞれの構成成分単独の値に比べて高分子量側にシ
フトするという特性を備えている。The reaction product of component C synthesized in this manner generally has a molecular weight of 1,000 to 100.00, and has a weight average molecular weight (peak in the time-absorbance curve) calculated as polystyrene by the gel permeation chromatography described above.
It has the characteristic that the molecular weight is shifted to the higher molecular weight side compared to the value of each component alone.
そして、上記反応生成物におけるブタジエン−アクリロ
ニトリル共重合体とシリコーン化合物との反応率は、５
０％以上であることが好ましい。The reaction rate between the butadiene-acrylonitrile copolymer and the silicone compound in the above reaction product is 5.
It is preferably 0% or more.
より好ましいのは、７０％以上である。なお、上記反応
率は、両者が１：１で完全反応したときを１００％とし
、これを基準にして求められるものである。More preferably, it is 70% or more. The above reaction rate is determined based on 100% when both are completely reacted at a ratio of 1:1.
このように、この発明に用いるＣ成分には、ブタジエン
−アクリロニトリル共重合体とシリコーン化合物とが全
て反応せずに、残存しているものも含まれる。したがっ
て、この発明で用いるエポキシ樹脂組成物中には、上記
Ｃ成分の構成原料であるブタジエン−アクリロニトリル
共重合体とシリコーン化合物とが存在していることがあ
るのであり、Ｃ成分の含有比率よりも上記両原料の含有
比率のほうが高い場合もある。As described above, the C component used in the present invention includes a component in which the butadiene-acrylonitrile copolymer and the silicone compound remain without reacting at all. Therefore, in the epoxy resin composition used in the present invention, the butadiene-acrylonitrile copolymer and silicone compound, which are the constituent raw materials of the C component, may be present, and the content ratio of the C component may be higher than that of the C component. The content ratio of both of the above raw materials may be higher in some cases.
上記Ｃ成分は、先に述べたように分子鎖の両末端にカル
ボキシル基を有するブタジエン−アクリロニトリル共重
合体と、アミノ基を有するシリコーン化合物とを反応さ
せて得られるものであり、その際の付加反応は、従来公
知の方法に従い、両者を混合し、所定の温度に加熱する
ことにより行うことができる。すなわち、反応温度は一
般に、５０〜２００℃、より好ましくは８０〜１８０℃
であり、反応時間は数分から数十時間の範囲内で、反応
成分に応じて適宜選択して行われる。As mentioned above, the above C component is obtained by reacting a butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecular chain with a silicone compound having an amino group. The reaction can be carried out by mixing the two and heating the mixture to a predetermined temperature according to a conventionally known method. That is, the reaction temperature is generally 50 to 200°C, more preferably 80 to 180°C.
The reaction time is suitably selected from several minutes to several tens of hours depending on the reaction components.
なお、上記Ｃ成分は、この発明に用いるエポキシ樹脂組
成物中に独立状態で含有されるだけでなく、Ａ成分であ
るエポキシ樹脂と反応した状態、すなわち、Ａ成分とＣ
成分の反応生成物である変性エポキシ樹脂の状態でも含
有される。In addition, the C component is not only contained in the epoxy resin composition used in the present invention in an independent state, but also in a state where it has reacted with the epoxy resin that is the A component, that is, the A component and the C component.
It is also contained in the form of modified epoxy resin, which is a reaction product of the components.
また、この発明では、上記Ａ成分、Ｂ成分およびＣ成分
以外に必要に応じて硬化促進剤、充填剤、離型剤等を用
いることができる。硬化促進剤としては、フェノール硬
化エポキシ樹脂の硬化反応の触媒となるものは全て用い
ることができ、例えば、２，４．６−）リ （ジメチル
アミノメチル）フェノール、２−メチルイミダゾール等
をあげることができる。充填剤としては、石英ガラス粉
。Further, in this invention, in addition to the above-mentioned components A, B, and C, a curing accelerator, a filler, a mold release agent, etc. can be used as necessary. As the curing accelerator, any catalyst for the curing reaction of the phenol-cured epoxy resin can be used, such as 2,4.6-)li(dimethylaminomethyl)phenol, 2-methylimidazole, etc. I can do it. As a filler, use quartz glass powder.
珪石粉、タルク等を用いることができる。離型剤として
は、従来公知のステアリン酸、バルミチン酸等の長鎖カ
ルボン酸、ステアリン酸亜鉛、ステアリン酸カルシウム
等の長鎖カルボン酸の金属塩、カルナバワックス、モン
タンワックス等のワツラス類等を用いることができる。Silica powder, talc, etc. can be used. As the mold release agent, conventionally known long-chain carboxylic acids such as stearic acid and valmitic acid, metal salts of long-chain carboxylic acids such as zinc stearate and calcium stearate, and waxes such as carnauba wax and montan wax may be used. I can do it.
この発明に用いるエポキシ樹脂組成物は、上記成分を用
い例えばつぎのようにして製造することができる。すな
わち、シリコーン化合物とカルボキシ化合物との反応生
成物（Ｃ成分）にエポキシ樹脂（Ａ成分）、ノボラック
型フェノール樹脂（Ｂ成分）および必要に応じて硬化促
進剤、離型剤および充填剤を配合し、常法に従ってトラ
イブレンド法または溶融ブレンド法を採用し混合すると
いうことにより、エポキシ樹脂組成物を製造することが
できる。The epoxy resin composition used in this invention can be produced using the above components, for example, in the following manner. That is, the reaction product of a silicone compound and a carboxy compound (component C) is mixed with an epoxy resin (component A), a novolac type phenol resin (component B), and if necessary, a curing accelerator, a mold release agent, and a filler. An epoxy resin composition can be produced by mixing in accordance with a conventional method using a tri-blend method or a melt-blend method.
上記エポキシ樹脂組成物中におけるＣ成分の配合量は、
硬化促進剤や充填剤等の添加剤成分を除いたエポキシ樹
脂組成物（Ａ成分子Ｂ成分十Ｃ成分）中に０．５〜５０
％含有されるように設定することが望ましい。特に、緒
特性にバランスのとれた半導体装置を得るためには、５
〜３０％とすることが好適である。The blending amount of component C in the above epoxy resin composition is:
0.5 to 50% in the epoxy resin composition (A component, B component, C component) excluding additive components such as curing accelerators and fillers.
It is desirable to set the content so that the content is %. In particular, in order to obtain a semiconductor device with balanced characteristics, five
It is preferable to set it to 30%.
また、上記エポキシ樹脂組成物中のＡ成分であるエポキ
シ樹脂とＢ成分であるノボラック型フェノール樹脂との
配合比は、上記エポキシ樹脂中のエポキシ基と上記フェ
ノール樹脂中の水酸基の当量比が０．６〜１．４の範囲
内が好ましく、特に０．８〜１．２となるように配合す
ることが好適である。Further, the blending ratio of the epoxy resin as component A and the novolac type phenol resin as component B in the epoxy resin composition is such that the equivalent ratio of the epoxy groups in the epoxy resin to the hydroxyl groups in the phenol resin is 0. It is preferably within the range of 6 to 1.4, and particularly preferably 0.8 to 1.2.
この当量比が１に近いほど好結果が得られる。The closer this equivalence ratio is to 1, the better the results.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は特に限定するものではなく、通常の方法、例えば
トランスファー成形等の公知のモールド方法により行う
ことができる。Sealing of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a conventional method, for example, a known molding method such as transfer molding.
このようにして得られる半導体装置は、極めて低応力性
、耐熱性、耐湿性に優れている。The semiconductor device thus obtained has extremely low stress properties, excellent heat resistance, and excellent moisture resistance.
以上のように、この発明の半導体装置は、分子両末端に
カルボキシル基を有するブタジエン−アクリロニトリル
共重合体とシリコーン化合物との反応生成物（Ｃ成分）
を含む特殊なエポキシ樹脂組成物を用いて封止されてお
り、その封止プラスチックパッケージが、従来のエポキ
シ樹脂組成物製のものとは異なり特殊であるため、耐湿
信顛性および耐熱信顛性が高（、しかも内部応力が小さ
く、信頬度の極めて高いものである。特に、上記特殊な
エポキシ樹脂組成物による封止により、超ＬＳＩ等の封
止に充分対応でき、素子サイズが１６鶴２以上、素子上
のＡＩ配線の幅が２μ麟以下の特殊な半導体装置におい
て、上記のような高信頼度が得られるようになるのであ
り、これが大きな特徴である。As described above, the semiconductor device of the present invention uses a reaction product (component C) of a butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecule and a silicone compound.
It is sealed using a special epoxy resin composition containing (In addition, the internal stress is small, and the reliability is extremely high. In particular, the sealing with the special epoxy resin composition mentioned above is sufficient for sealing VLSI etc., and the device size is 16 Tsuru. This is a major feature of the special semiconductor device in which the width of the AI wiring on the element is 2 μm or less and the width of the AI wiring on the device is 2 μm or less.
つぎに、実施例について説明する。Next, examples will be described.
まず、下記のようにしてＣ成分を調製した。First, component C was prepared as follows.
くＣ成分の調製〉
分子鎖の両末端にガルボキシル基を有するブタジエン−
アクリロニトリル共重合体として下記の第１表に示すａ
、ｂ２種類の共重合体を準備すると同時に、この共重合
体と反応させる、アミノ基を有するシリコーン化合物と
して同表に示す０〜ｇの５種類のシリコーン化合物を準
備した。Preparation of component C> Butadiene having galboxyl groups at both ends of the molecular chain
a shown in Table 1 below as an acrylonitrile copolymer
, b2 types of copolymers were prepared, and at the same time, 5 types of silicone compounds of 0 to 1g shown in the same table were also prepared as silicone compounds having amino groups to be reacted with the copolymers.
（以下余白）
つぎに、上記共重合体とシリコーン化合物とを後記の第
２表に示す割合で配合し、その配合物を丸底フラスコに
入れ、１７５℃で１〜５時間攪拌を行い、上記ブタジエ
ン−アクリロニトリル共重合体とシリコーン化合物とを
反応させ、反応生成物１〜１０（Ｃ成分）を得た。(Left below) Next, the above copolymer and silicone compound were blended in the proportions shown in Table 2 below, and the mixture was placed in a round bottom flask and stirred at 175°C for 1 to 5 hours. The butadiene-acrylonitrile copolymer and the silicone compound were reacted to obtain reaction products 1 to 10 (component C).
（以下余白）
他方、Ａ成分であるエポキシ樹脂およびＢ成分であるノ
ボラック型フェノール樹脂として、後記の第３表に示す
エポキシ樹脂およびノボラック型フェノール樹脂を準備
した。(Left below) On the other hand, as the epoxy resin serving as the A component and the novolak type phenol resin serving as the B component, epoxy resins and novolak type phenol resins shown in Table 3 below were prepared.
〔実施例１〜１６〕
上記のようにして得られた。１０種類の反応生成物と、
上記第３表に示すエポキシ樹脂、フェノール樹脂ならび
にその他の原料を後記の第４表に従つて配合し、ミキシ
ングロール機（ロール温度１００℃）で１０分間溶融混
練を行い冷却固化後粉砕し、目的とする粉末状のエポキ
シ樹脂組成物を１尋た。[Examples 1 to 16] Obtained as described above. 10 types of reaction products,
Epoxy resins, phenolic resins, and other raw materials shown in Table 3 above are blended according to Table 4 below, melt-kneaded for 10 minutes with a mixing roll machine (roll temperature 100°C), cooled and solidified, and then pulverized. One fathom of a powdered epoxy resin composition was used.
（以下余白）
〔比較例１，２〕
下記の第５表に示す原料を用い、これらの原料をミキシ
ングロール機（ロール温度１００℃）で１０分間混練し
、得られたシート状組成物を用い、実施例１〜１６と同
様にして粉末状のエポキシ樹脂組成物を得た。(The following is a blank space) [Comparative Examples 1 and 2] Using the raw materials shown in Table 5 below, these raw materials were kneaded for 10 minutes with a mixing roll machine (roll temperature 100 ° C.), and the obtained sheet composition was used. Powdered epoxy resin compositions were obtained in the same manner as in Examples 1 to 16.
以上の実施例および比較例によって得られた粉末状のエ
ポキシ樹脂組成物を用い、半導体素子をトランスファー
成形でモールドすることにより半導体装置を得た。この
ようにして得られた半導体装直について、曲げ弾性率、
ガラス転移温度、電圧印加状態におけるプレッシャー釜
による１０００時間の信頬テスト（以下ｒＰＣＢＴテス
ト」と略す）および−５０℃／３０分〜１５０℃／３０
分の２００回の温度サイクルテスト（以下ｒＴＣＴテス
ト」と略す）の測定を行った。その結果を下記の第６表
に示した。A semiconductor device was obtained by molding a semiconductor element by transfer molding using the powdered epoxy resin composition obtained in the above Examples and Comparative Examples. For the semiconductor device obtained in this way, the bending elastic modulus,
Glass transition temperature, 1000-hour test using a pressure cooker under voltage application (rPCBT test) and -50°C/30 minutes to 150°C/30 minutes
A temperature cycle test (hereinafter abbreviated as "rTCT test") of 200 minutes was conducted. The results are shown in Table 6 below.
（以下余白）
！−」Ｌ−表
第６表の結果から、実施例品はＰＣＢＴテストおよびＴ
ＣＴテストの成績が比較例品に比べて著しく優れている
ことがわかる。(Margin below)! - From the results in Table 6 of the L-Table, the example product was tested by PCBT test and T
It can be seen that the CT test results are significantly superior to those of the comparative example.
Claims (1)
脂組成物を用いて半導体素子を封止してなる半導体装置
。 （Ａ）エポキシ樹脂。 （Ｂ）ノボラック型フェノール樹脂。 （Ｃ）分子鎖の両末端にカルボキシル基を有するブタジ
エン−アクリロニトリル共重合体とアミノ基を有するシ
リコーン化合物との反応生成物。(1) A semiconductor device in which a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C). (A) Epoxy resin. (B) Novolac type phenolic resin. (C) A reaction product of a butadiene-acrylonitrile copolymer having carboxyl groups at both ends of the molecular chain and a silicone compound having an amino group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61057933A JPS62214650A (en) | 1986-03-14 | 1986-03-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61057933A JPS62214650A (en) | 1986-03-14 | 1986-03-14 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62214650A true JPS62214650A (en) | 1987-09-21 |
Family
ID=13069815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61057933A Pending JPS62214650A (en) | 1986-03-14 | 1986-03-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62214650A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02305860A (en) * | 1989-02-10 | 1990-12-19 | Toray Ind Inc | Thermosetting resin composition, cured product of resin, prepreg, and fiber-reinforced plastics |
| EP0707042A1 (en) * | 1994-10-07 | 1996-04-17 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing electronic parts and sealed semiconductor device using the same |
| KR100437322B1 (en) * | 2001-06-04 | 2004-06-25 | 한국타이어 주식회사 | Resin Composition for Mixing with Rubber and Rubber Composition Containing the Same |
-
1986
- 1986-03-14 JP JP61057933A patent/JPS62214650A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02305860A (en) * | 1989-02-10 | 1990-12-19 | Toray Ind Inc | Thermosetting resin composition, cured product of resin, prepreg, and fiber-reinforced plastics |
| EP0707042A1 (en) * | 1994-10-07 | 1996-04-17 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing electronic parts and sealed semiconductor device using the same |
| KR100437322B1 (en) * | 2001-06-04 | 2004-06-25 | 한국타이어 주식회사 | Resin Composition for Mixing with Rubber and Rubber Composition Containing the Same |
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