JPS62211939A - Self-cooling type semiconductor controlling device - Google Patents
Self-cooling type semiconductor controlling deviceInfo
- Publication number
- JPS62211939A JPS62211939A JP5524986A JP5524986A JPS62211939A JP S62211939 A JPS62211939 A JP S62211939A JP 5524986 A JP5524986 A JP 5524986A JP 5524986 A JP5524986 A JP 5524986A JP S62211939 A JPS62211939 A JP S62211939A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- cooling
- self
- semiconductor stack
- element cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 238000005192 partition Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 25
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 230000001174 ascending effect Effects 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 101100281516 Caenorhabditis elegans fox-1 gene Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
この発明は電車等の車両の床下に搭載される半導体制御
装置に関し、特に装置箱に外気の流通が可能な開放部を
有してそこでの空気の自然対流を利用して半導体素子の
冷却を行うようにした自冷式半導体制御装置に関する。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention relates to a semiconductor control device mounted under the floor of a vehicle such as a train, and in particular, the present invention relates to a semiconductor control device mounted under the floor of a vehicle such as a train. The present invention relates to a self-cooling type semiconductor control device that cools a semiconductor element using natural convection of air therein.
（従来の技術）
一般に、この種の車両用半導体制御装置は、装置箱内に
半導体素子及びその周辺回路用品によって構成した半導
体スタックを必要数収納していて、その構成用品のうち
半導体素子や抵抗などの発熱体を適切に冷却する必要が
ある。それらの冷却は各種の方式があるが、装置の構成
や保守成いはコスト等の面で有利な自冷式を採用する例
が多い。(Prior Art) In general, this type of semiconductor control device for a vehicle stores a required number of semiconductor stacks made up of semiconductor elements and peripheral circuit supplies in a device box. It is necessary to properly cool heating elements such as There are various methods for cooling these devices, but in many cases, the self-cooling method is adopted because it is advantageous in terms of cost and maintenance of the device.
その自冷式半導体制御装置の従来例を第１１図及び第１
２図面の簡単な説明すると、１は車両床下に搭載される
ｌ固相で、この装置箱１内に複数の半導体スタック２と
その他の電気品；３が配設されている。その各半導体ス
タツイノ２は、半導体素子４と、この素子冷却用フィン
５ど、抵抗等の“発熱体６と、その他のスタック構成用
品７などを組込んでなる構成で、各スタックごとにそれ
ぞれ取付板８を介して該装置箱内に取付られている。Figures 11 and 1 show conventional examples of self-cooling semiconductor control devices.
To briefly explain the drawings, numeral 1 denotes a solid phase device mounted under the floor of a vehicle, and inside this equipment box 1, a plurality of semiconductor stacks 2 and other electrical components; 3 are arranged. Each semiconductor stack 2 has a structure that incorporates a semiconductor element 4, a fin 5 for cooling the element, a heating element 6 such as a resistor, and other stack components 7, which are attached to each stack. It is attached inside the device box via a plate 8.
ここで装置箱１内の温度上昇を抑えＤつ半導体素子等の
冷却を外部の低い温度の空気により行うようにする為に
、該装置箱１内を密閉室１ａ。Here, in order to suppress the temperature rise inside the equipment box 1 and to cool the semiconductor elements etc. with external low temperature air, the inside of the equipment box 1 is set up in a closed room 1a.
１ｂと外部空気に流通が可能な開放部１Ｃとに区画する
と共に、各半導体スタック２の外部塵埃等の侵入をきら
う半導体素子４やその他のスタック構成用品７は前記密
閉室１ａ側に配置し、発熱の大きい素子冷却フィン５や
抵抗等の発熱体６は取付板８を挟んで開放部１Ｃ側に配
置して、その開放部１Ｃ内に外部からの空気の自然対流
により素子冷却フィン５や発熱体６を冷却するようにし
ている。なおその開放部１Ｃは外部からの空気の流れを
妨げずに素子冷却フィン５や発熱体６等を保護するため
に、下面部及び正面部に適当な大きさの打抜き穴を多数
設けた保護カバー９を取付けて覆っていると共に、その
上面部を構成する箱枠部にも同様に穴を設けている。こ
れで温度の低い外部空気が開放部１ｃ内を素子冷却フィ
ン５や発熱体６からの放熱により図示矢印の如く自然対
流して冷却作用をなすようになっている。1b and an open part 1C that allows circulation to outside air, and the semiconductor elements 4 and other stack components 7 that prevent dust from entering each semiconductor stack 2 are placed on the side of the sealed chamber 1a, The element cooling fins 5 and heat generating elements 6 such as resistors, which generate a large amount of heat, are placed on the open part 1C side with the mounting plate 8 in between, and the element cooling fins 5 and heat generating elements are disposed on the open part 1C side with the mounting plate 8 in between, and natural convection of air from the outside occurs in the open part 1C. The body 6 is cooled. The open part 1C is a protective cover with a number of appropriately sized punched holes in the lower and front parts in order to protect the element cooling fins 5, heating element 6, etc. without interfering with the flow of air from the outside. 9 is attached and covered, and a hole is similarly provided in the box frame portion constituting the upper surface portion. As a result, low-temperature external air naturally convects inside the open portion 1c as shown by the arrows in the figure due to heat radiation from the element cooling fins 5 and the heating element 6, thereby producing a cooling effect.
一方、もう一つの従来例として第１３図及び第１４図に
示す自冷式半導体制御装置がある。これは装置箱１の中
央部に」二下に貫通する風洞のような開ＩＪ！１部１ｄ
を設け、この開放部７ｄ内に各半導体スタック２の素子
冷却フィン５や抵抗等の発熱体６を配置して、それらの
熱により温度の低い外部空気の開放部１ｄへの図示矢印
の如き自然対流により該素子冷却フィン５や発熱体６の
冷却作用をなすようになっている。On the other hand, as another conventional example, there is a self-cooling type semiconductor control device shown in FIGS. 13 and 14. This is an open IJ like a wind tunnel that penetrates downwards in the center of equipment box 1! 1 part 1d
The element cooling fins 5 of each semiconductor stack 2 and the heating elements 6 such as resistors are arranged in the open part 7d, and the heat generated by these elements allows the low-temperature external air to flow naturally to the open part 1d as shown by the arrow in the figure. The element cooling fins 5 and the heating element 6 are cooled by convection.
（発明が解決しようとする問題点）
ところで、前述した従来の各自冷式半導体制御装置は次
のような問題があった。つまり、先ず前者の第１１図及
び第１２図に示した装置では、装置箱１の開放部１ｃを
底面部及び前面部に多数の打抜き穴付き保護カバー９に
より覆って、該開放部１Ｇの空気の流れを妨げないよう
にしているが、その開放部１ｃ内の各素子冷却フィン５
は該フィン５自身からの放熱によって生じる空気の自然
対流によって冷却されるだけであるので、その冷却能力
が低い問題があった。(Problems to be Solved by the Invention) By the way, each of the conventional self-cooling type semiconductor control devices described above has the following problems. That is, in the former device shown in FIGS. 11 and 12, the open portion 1c of the device box 1 is covered with a protective cover 9 with a large number of punched holes on the bottom and front surface, so that the air in the open portion 1G is Each element cooling fin 5 in the open portion 1c is
Since the fins 5 are cooled only by natural convection of air generated by heat dissipation from the fins 5 themselves, there is a problem in that the cooling capacity is low.
また後者の第１３図及び第１４図に示した装置では、開
放部１ｄが上下端のみ開放した風洞の如き構成であるこ
とから、その内部の冷却フィン５からの熱だけでなく、
その上側に配する抵抗等の発熱体６からの熱によって、
開放部１ｄ内上部の空気が暖められ、これに伴う自然対
流により外部空気が開放部１ｄ内を下方から上方に向け
て流れて、該各素子冷却フィン５や発熱体６が冷却され
るようになるが、しかし装置の構成及び絶縁等の為に各
半導体スタック２の素子冷却フィン５同志の相互間や該
素子冷却フィン５と装置箱１の箱内壁板との間に大きな
空間ができているので、開放部１ｄ内を上昇する空気の
流れが空気抵抗の少ない空間部分に分散し、上側の抵抗
等の発熱体６による開放部１ｄ内の空気の自然対流促進
効果が素子冷却フィン５の冷却に有効に生かされず、や
はりこれも冷却能力が低い問題があった。Furthermore, in the latter device shown in FIGS. 13 and 14, since the open portion 1d has a structure similar to a wind tunnel with only the upper and lower ends open, not only the heat from the cooling fins 5 inside the open portion 1d but also the
Due to the heat from the heating element 6 such as a resistor placed above it,
The air in the upper part of the open part 1d is warmed, and the accompanying natural convection causes external air to flow from the bottom to the top in the open part 1d, so that each element cooling fin 5 and heating element 6 are cooled. However, due to the structure of the device and insulation, large spaces are created between the device cooling fins 5 of each semiconductor stack 2 and between the device cooling fins 5 and the inner wall plate of the device box 1. Therefore, the flow of air rising inside the opening 1d is dispersed into the space with low air resistance, and the effect of promoting natural convection of the air inside the opening 1d by the heating element 6 such as the upper resistance cools the element cooling fins 5. This also had the problem of low cooling capacity.
従って、前記従来の装置ではいずれにおいても所定の冷
却を行う為には、素子冷却フィン５を大きなものとする
必要があり、装置全体の小形・軽量化を図ることが困鉗
であった。Therefore, in any of the conventional devices described above, the element cooling fins 5 must be made large in order to perform the desired cooling, making it difficult to reduce the size and weight of the entire device.
本発明は上記事情に鑑みなされたもので、簡易な構成で
冷却性能の向上が図れて、装置全体の小形・軽量化が可
能となる自冷式半導体制御装置を提供することを目的と
する。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a self-cooling type semiconductor control device that can improve cooling performance with a simple configuration and make it possible to reduce the size and weight of the entire device.
（問題を解決するための手段）
この発明の自冷式半導体装置は、冷却性能をアップする
ために、制御箱の開放部に仕切り板等を設けて、該開放
部に各半導体スタックごとに区分して各々当該半導体ス
タックの素子冷却フィンと抵抗等の発熱体を囲む上下端
開放の分割風洞を構成したことを特徴とする。(Means for Solving the Problem) In order to improve cooling performance, the self-cooling semiconductor device of the present invention is provided with a partition plate or the like in the open part of the control box, and the open part is divided into sections for each semiconductor stack. The semiconductor stack is characterized in that a divided wind tunnel with open upper and lower ends surrounds the element cooling fins of the semiconductor stack and heating elements such as resistors.
（作用）
６一
ト記楕成によト〕、装置箱の開ｈり部内に配する素子冷
却フィン及びその上側の抵抗等の発熱体からの熱で該開
放部内上部の空気が暖められ、これにて自然対流が起き
て温度の低い外部空気が開ｈ々部内にその下方から上方
に流れるが、その上昇気流は開放部内を各半導体スタッ
クごとに区分構成した各分割風洞内をそれぞれ流れるよ
うになり、しかもその各分割風洞内の素子冷却フィンの
周囲空間が小さいので、その−Ｆ側の抵抗等の発熱体か
らの熱による自然対流促進効果が各分割風洞内に有効に
生かされて、下方から浸入した外部空気の各素子冷却フ
ィン表面を通過する割合及び風速が大きく得られて、各
素子冷却フィンの冷却効率が向トするようになる。(Function) 6) Due to the ellipse configuration described above, the air in the upper part of the opening is warmed by the heat from the element cooling fins arranged in the opening of the equipment box and the heating element such as the resistor above the fin, and This causes natural convection, and low-temperature external air flows into the opening from below to above, but the rising air flows through each divided wind tunnel, which is divided into sections for each semiconductor stack inside the opening. Moreover, since the space around the element cooling fins in each divided wind tunnel is small, the natural convection promoting effect of heat from the heating element such as the -F side resistor is effectively utilized in each divided wind tunnel. The ratio and wind speed of the external air entering from below passing through the surface of each element cooling fin can be increased, and the cooling efficiency of each element cooling fin can be improved.
（実施例）
以下この発明のいくつかの実施例を図面に従い説明する
。なお図中前記第１１図乃至第１４図に示したものと同
一構成をなすものには同一符号を付して説明の簡略化を
図ることにする。(Embodiments) Some embodiments of the present invention will be described below with reference to the drawings. Components in the drawings having the same configuration as those shown in FIGS. 11 to 14 are designated by the same reference numerals to simplify the explanation.
まず、第１図乃至第４図はこの発明の第１実施例を示す
もので、第１１図及び第１２図に示した従来例と同様に
一側に開放部１Ｇを有した装置箱１に各半導体スタック
２やその他の電気品３を配置した形式のもので、その間
ｈり部１ｃにはこの内部にそれぞれ配＠する各半導体ス
タック２の素子冷却フィン５と抵抗等の発熱体６とを外
部から保護する保護カバー１０が取付られている。この
保護カバー１０は第１１図及び第１２図に示した従来の
保護カバー９と構成が異なり、下面部のみに適当な大き
さの打１友き穴１０ａが形成され、立上がり正面部は穴
が一切無い目くら板とされでいる（第３図参照）。また
この保護カバー１０の前記口くら板である立上が正面部
の内面側に複数枚の仕切り板１１が突設され、これら仕
切り板１１が前記開放部１Ｃ内の各半導体スタック２の
それぞれの素子冷却フィン５の両側近傍位置に配して、
該開放部１Ｃ内に各半導体スタック２ごとに区分して各
々の当該半導体スタック２の素子冷却フィン５と発熱体
６を囲む上下端開放の分割風洞１２ａ、１２ｂ、１２ｃ
・・・を構成する状態とされている。なお開放部１Ｇの
土面部の箱入板部には下面部間様に適当な大きさの打扱
き穴′１３が形成されている。First, FIGS. 1 to 4 show a first embodiment of the present invention, in which a device box 1 having an opening 1G on one side is used, similar to the conventional example shown in FIGS. 11 and 12. Each semiconductor stack 2 and other electrical components 3 are placed in the hutch 1c between which element cooling fins 5 of each semiconductor stack 2 and a heating element 6 such as a resistor are placed. A protective cover 10 is attached for protection from the outside. This protective cover 10 is different in structure from the conventional protective cover 9 shown in FIGS. 11 and 12, in that a perforated hole 10a of an appropriate size is formed only on the bottom surface, and no hole is formed on the rising front surface. It is said that there is no blind board at all (see Figure 3). Further, a plurality of partition plates 11 are provided protrudingly provided on the inner surface side of the upright front portion of the protective cover 10, and these partition plates 11 are arranged to separate the respective semiconductor stacks 2 in the opening portion 1C. Arranged near both sides of the element cooling fins 5,
Divided wind tunnels 12a, 12b, 12c with open upper and lower ends surround the element cooling fins 5 and heating elements 6 of each semiconductor stack 2 in the open portion 1C.
It is said that the state consists of... Note that a punching hole '13 of an appropriate size is formed between the bottom surface of the box inserting portion of the earth surface of the open portion 1G.
而して、上述した構成の自冷式半導体制御装置であれば
、装置箱１の開放部１Ｃ内に配する素子冷却フィン５及
びその上側の抵抗等の発熱体６からの熱で該開放部１Ｃ
Ｃ内部の空気が暖められ、これにて自然対流が起きて温
度の低い外部空気が開放部１Ｃ内にその下方から上方に
流れるが、その上昇気流は開放部１Ｃ内を保護カバー１
０から突設した仕切り板１１により各半導体スタック２
ごとに区分構成した各分割風洞１２ａ、１２ｂ。In the case of the self-cooling type semiconductor control device having the above-mentioned configuration, heat from the element cooling fins 5 disposed in the open portion 1C of the device box 1 and the heating element 6 such as a resistor above the open portion 1C cools the open portion. 1C
The air inside C is warmed, and this causes natural convection, causing low-temperature external air to flow upward into the open part 1C from below, but the rising air flows inside the open part 1C through the protective cover 1.
Each semiconductor stack 2 is separated by a partition plate 11 protruding from 0.
Each divided wind tunnel 12a, 12b is divided into sections.
１２Ｇ・・・内をそれぞれ流れるようになる。この為に
その各分割風洞１２ａ、１２ｂ、１２ｃ・・・内を下方
から上方に流れる外部空気は素子冷却フィン５の熱と共
にその上側の抵抗等の発熱体６からの熱による自然対流
促進効果が有効に生かされて風速が高くなり、しかもそ
の各分割風洞１２ａ。12G... will each flow inside. For this reason, the external air flowing from the bottom to the top inside each of the divided wind tunnels 12a, 12b, 12c... has a natural convection promoting effect due to the heat from the element cooling fins 5 as well as the heat from the heating element 6 such as a resistor on the upper side. The wind speed is increased by effectively utilizing the divided wind tunnels 12a.
１２ｂ、１２ｃ・・・内の素子冷却フィン５の周囲空間
が小さいので、下方から侵入した外部空気の各素子冷却
フィン５表面を通過覆る割合が大きくなる。このために
冷却フィン５の冷却効率が従来のものに比しかなり向上
するようになる。Since the surrounding space of the element cooling fins 5 in the elements 12b, 12c, . For this reason, the cooling efficiency of the cooling fins 5 is considerably improved compared to the conventional one.
つまり第４図は半導体素子４の発熱量に灼する素子冷却
フィン５の熱抵抗値を表わす試験デ〜りのグラフで、実
線１４は上記本発明の実施例の冷却性能曲線、破線１５
は第１１図及び第１２図に示した従来例の冷却性能曲線
であり、従来のものに比して本発明の素子冷却フィン５
の冷却効率が約１０％程度向上していることが確認され
る。この為に同じ冷却性能を確保するのであれば、従来
より素子冷却フィン５を小さくすることができるように
なる。In other words, FIG. 4 is a graph showing the thermal resistance value of the device cooling fin 5 when heated by the semiconductor device 4. The solid line 14 is the cooling performance curve of the embodiment of the present invention, and the broken line 15 is
is the cooling performance curve of the conventional example shown in FIG. 11 and FIG.
It is confirmed that the cooling efficiency has improved by about 10%. Therefore, if the same cooling performance is to be maintained, the element cooling fins 5 can be made smaller than before.
次に、第５図及び第６図はこの発明の第２実施例を示す
もので、ここでは装置箱１の開放部１Ｇに前記第１実施
例の如き仕切り板１１付き保護カバー１０を設けず、そ
の代わりに各半導体スタック２ごとに付属させて風洞板
２０を設けて、この各風洞板２０によりそれぞれ開放部
１Ｃ内に配置する冷却フィン５と抵抗等の発熱体６を囲
む分割−１０＝
風洞２１ａ、２１ｂ、２１ｃ・・・を構成した構造であ
る。つまり各風洞板２０はそれぞれ断面コ字形状の縦長
のもので、上下面部には適当大きさの打抜き穴２０ａを
それぞれ有して空気の流通が可能な状態に開放されてい
るが、立上がり正面部及び両側面部は目くら板とされて
いる構成で、各半導体スタック２ごとにその取付板８に
開放裏面側を接合して固定することで取付られて、当該
半導体スタック２の素子冷却フィン５とその上側の抵抗
等の発熱体６を内部に収納する分割風洞２１ａ。Next, FIGS. 5 and 6 show a second embodiment of the present invention, in which the protective cover 10 with the partition plate 11 as in the first embodiment is not provided in the opening 1G of the device box 1. Instead, a wind tunnel plate 20 is provided attached to each semiconductor stack 2, and each wind tunnel plate 20 surrounds the cooling fins 5 and heating elements 6 such as resistors, which are arranged in the open portion 1C. This structure includes wind tunnels 21a, 21b, 21c, . . . . In other words, each wind tunnel board 20 is a vertically elongated one with a U-shaped cross section, and has punched holes 20a of appropriate size on the upper and lower surfaces, which are open to allow air to circulate. And both side parts are configured as blind plates, and each semiconductor stack 2 is attached by joining and fixing the open back side to the mounting plate 8 of the semiconductor stack 2, and the element cooling fins 5 of the semiconductor stack 2 are attached. A divided wind tunnel 21a houses a heating element 6 such as a resistor on the upper side thereof.
２１ｂ、２ＩＣ・・・を構成したものである。21b, 2IC...
こうした構成のものでも、前記第１実施例のものと同様
に優れた冷却性能が得られる。またこの第２実施例の場
合、各半導体スタック２を装置箱１から取外して床など
に置く際、風洞板２０が素子冷却フィン５や抵抗等の発
熱体６を外部から保護する役割を果たすと共に、該風洞
板２０に図示の如く取手２２を設けておけば、各半導体
スタック２の装置箱１内への脱着作業が楽にできるよう
になる。更には風洞板２０が素子冷却フィン５や発熱体
６の保護を行うので、従来の開放部１Ｃ全体を覆う保護
カバーが不要となり、各半導体スタック２の脱着作業時
に保護カバーを取外したり付は直したりする手間が省け
るようになる効果もある。Even with such a configuration, excellent cooling performance can be obtained similar to that of the first embodiment. Further, in the case of the second embodiment, when each semiconductor stack 2 is removed from the device box 1 and placed on the floor, the wind tunnel plate 20 serves to protect the element cooling fins 5 and the heat generating elements 6 such as resistors from the outside. If the wind tunnel plate 20 is provided with a handle 22 as shown in the figure, each semiconductor stack 2 can be easily attached and detached into the device box 1. Furthermore, since the wind tunnel plate 20 protects the element cooling fins 5 and the heating element 6, there is no need for the conventional protective cover that covers the entire open section 1C, and the protective cover can be removed or reattached when each semiconductor stack 2 is attached or detached. It also has the effect of saving you the trouble of doing so.
また、第７図及び第８図はこの発明の第３実施例を示す
もので、ここでは第１３図及び第１４図に示したものと
同様に装置箱１の中央部に上下に貫通する開放部１ｄを
設けた形式のもので、この場合にはその中央開放部１ｄ
内にその両側箱内壁板間に介在させて複数の仕切り板３
０を設けて、各半導体スタック２ごとに区分してそれぞ
れ素子冷却フィン５とその上側の抵抗等の発熱体６とを
囲む上下端開放の分割風洞３１８．３１ｂ。Further, FIGS. 7 and 8 show a third embodiment of the present invention, in which an opening penetrating vertically in the center of the device box 1 is shown, similar to that shown in FIGS. 13 and 14. In this case, the center open part 1d
A plurality of partition plates 3 are interposed between the inner wall plates on both sides of the box.
A divided wind tunnel 318.31b with open upper and lower ends surrounds the element cooling fin 5 and the heating element 6 such as a resistor above the element cooling fin 5 and the heating element 6 such as a resistor on the upper side thereof.
３１Ｃ・・・を構成した構造である。この構造のものに
おいても前記第１実施例同様の優れた冷却性能が得られ
るようになる。This is a structure composed of 31C... With this structure as well, excellent cooling performance similar to the first embodiment can be obtained.
更に、第９図及び第１０図はこの発明の第４実施例を示
すもので、これは装置箱１の中央部に上下に貫通する開
放部１ｄを有する第３実施例のものと類似する形式のも
のであるが、その第３実施例の如く仕切り板３０のよう
なものでなく、第５図及び第６図に示した第２実施例の
ような断面コ字形状の縦長な風洞板４０をそれぞれ装置
箱１の気密室１ａ側壁板に固定して設け、これで各半導
体スタック２ごとに区分してそれぞれ素子冷却フィン５
とその上側の抵抗等の発熱体６とを囲む上下端開放の分
割風洞４１ａ、４１ｂ、４１ｃ・・・を構成した構造で
ある。この構造のものにおいても前記第１実施例同様の
優れた冷却性能が得られるようになる。またこの構造で
あれば、装置箱１の気密室１ｂと中央開放室１ｄとを仕
切る箱内壁板が不要となり、その気密室１ｂからの放熱
面積を増加できて該気密室１ｂ内の温度上昇をも効果的
に抑えることが可能となる。Furthermore, FIGS. 9 and 10 show a fourth embodiment of the present invention, which is similar to the third embodiment, having an opening 1d penetrating vertically in the center of the device box 1. However, instead of the partition plate 30 as in the third embodiment, it is a vertically elongated wind tunnel plate 40 with a U-shaped cross section as in the second embodiment shown in FIGS. 5 and 6. are fixed to the side wall plate of the airtight chamber 1a of the equipment box 1, and each semiconductor stack 2 is divided into element cooling fins 5.
It has a structure in which divided wind tunnels 41a, 41b, 41c, . With this structure as well, excellent cooling performance similar to the first embodiment can be obtained. In addition, with this structure, there is no need for an inner box wall plate that partitions the airtight chamber 1b and the central open chamber 1d of the equipment box 1, and the heat dissipation area from the airtight chamber 1b can be increased, thereby reducing the temperature rise in the airtight chamber 1b. can also be effectively suppressed.
この発明は上述した如くなしたから、温度の低い外部空
気が装置箱の開放部内の各半導体スタックごとに区分構
成した各分割風洞内をそれぞれ下方から上方に流れるよ
うになり、しかもその各分割風洞内の素子冷却フィンの
周囲空間が小さいので、その上側の抵抗等の発熱体から
の熱による自然対流促進効果が各分割風洞内に有効に生
かされて、外部空気の各素子冷却フィン表面を通過する
割合及び風速が大きくなり、各素子冷却フィンの冷却効
率の向上が簡易な構成で図れて、装置全体の小形・軽量
化が可能となる自冷式半導体制御装置が得られる。Since this invention is made as described above, low-temperature external air can flow from the bottom to the top in each of the divided wind tunnels that are divided and configured for each semiconductor stack in the open part of the device box, and each of the divided wind tunnels Since the space surrounding the element cooling fins inside is small, the natural convection promoting effect of the heat from the heating element such as the resistor above is effectively utilized in each divided wind tunnel, and the external air passes over the surface of each element cooling fin. A self-cooled semiconductor control device is obtained in which the cooling efficiency of each element cooling fin can be improved with a simple configuration, and the entire device can be made smaller and lighter.
第１図乃至第４図はこの発明の第１実施例を示すもので
、第１図は一部省略した縦断面図、第２図は第１図のＡ
−Ａｌｉ！に沿う横断面図、第３図（ａ）（ｂ）は分割
風洞を構成するための保護カバーを一部断面した側面図
及び正面図、第４図は本発明のものと従来のものとの素
子冷却フィンの冷却効率をグラフにて比較した冷却性能
特性図、第５図はこの発明の第２実施例を示す縦断面図
、第６図は第５図のＢ−Ｂ線に沿う横断面図、第７図は
この発明の第３実施例を示す縦断面図、第８図は第７図
のＣ−Ｃ線に沿う横断面図、第９図はこの発明の第４実
施例を示す縦断面図、第１０図は第９図のＩＩ−Ｄ線に
沿う横断面図、第１１図は従来例を示す縦断面図、第１
２図は第１１図のＥ−Ｆ線に沿う横断面図、第１３図は
他の従来例を示す縦断面図、第１４図は第１３図のＦ−
Ｆ線に沿う横断面図である。
１・・・装置箱、１ａ、１ｂ・・・気密室、１ｃ、１ｄ
・・・開放室、２・・・半導体スタック、３・・・その
他の電気品、４・・・半導体素子、５・・・素子冷却フ
ィン、６・・・抵抗等の発熱体、８・・・取付板、１０
・・・保護カバー、１１．３０・・・仕切り板、２０．
４０・・・風洞板、１２８〜１２Ｇ、２１８〜２１Ｇ、
３１ａ 〜３１ｃ、４１ａ 〜４１ｃｍ・・分割風洞。
出願人代理人 弁理士 鈴江武彦
第３図
１４開日ａＧ２−２１１９３９ （６）第５図
４：１
、 ・ ２１ｃ
１−一］
２１ｂ
ｌ 、 ｊ
イ！↓！１インド、１１ミゴ・（宕と：り？；し−（Ｗ
）１ −−−一′ｌ ２０
−−−」
１ａ
狐 １＋ 只 １Ｃ
第９図
第１１図1 to 4 show a first embodiment of the present invention, in which FIG. 1 is a partially omitted vertical sectional view, and FIG. 2 is an A of FIG. 1.
-Ali! 3(a) and 3(b) are partially sectional side and front views of a protective cover for constructing a split wind tunnel, and FIG. 4 is a cross-sectional view of the present invention and the conventional one. A cooling performance characteristic diagram comparing the cooling efficiency of element cooling fins in a graph, FIG. 5 is a vertical cross-sectional view showing the second embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along the line B-B in FIG. 7 is a vertical cross-sectional view showing a third embodiment of the present invention, FIG. 8 is a cross-sectional view taken along line C-C in FIG. 7, and FIG. 9 is a cross-sectional view showing a fourth embodiment of the present invention. 10 is a cross-sectional view taken along line II-D in FIG. 9; FIG. 11 is a vertical sectional view showing the conventional example;
2 is a cross-sectional view taken along line E-F in FIG. 11, FIG. 13 is a vertical cross-sectional view showing another conventional example, and FIG. 14 is a cross-sectional view taken along line F-F in FIG.
It is a cross-sectional view along the F line. 1... Equipment box, 1a, 1b... Airtight room, 1c, 1d
... Open chamber, 2... Semiconductor stack, 3... Other electrical items, 4... Semiconductor element, 5... Element cooling fin, 6... Heating element such as resistor, 8...・Mounting plate, 10
...protective cover, 11.30...partition plate, 20.
40... Wind tunnel board, 128~12G, 218~21G,
31a ~ 31c, 41a ~ 41cm...Divided wind tunnel. Applicant's agent Patent attorney Takehiko Suzue Figure 3 14 Kaichi Nippon aG2-211939 (6) Figure 5 4:1, 21c 1-1] 21b l, j I! ↓! 1 India, 11 Migo・(宕と：ri?;shi-(W
)1 ---1'l 20 ---'' 1a Fox 1+ Only 1C Figure 9 Figure 11
Claims (3)
クとその他の電気品を収納すると共に、制御箱の開放部
に前記各半導体スタックの素子冷却用フィンとその上部
に抵抗等の発熱体を配した自冷式半導体制御装置におい
て、前記制御箱の開放部に前記各半導体スタックごとに
区分して各々当該半導体スタックの素子冷却用フィンと
発熱体を囲む上下端開放の分割風洞を構成したことを特
徴とする自冷式半導体制御装置。(1) A plurality of semiconductor stacks including semiconductor elements and other electrical components are housed in a control box, and element cooling fins for each of the semiconductor stacks are installed in the open part of the control box, and heating elements such as resistors are placed above the fins. In the self-cooling type semiconductor control device arranged in the control box, a divided wind tunnel with open upper and lower ends is configured for each of the semiconductor stacks and surrounds the element cooling fins and heating element of each semiconductor stack in the open part of the control box. A self-cooling semiconductor control device featuring:
内壁板と該開放部を区分する仕切り板とによりそれぞれ
構成したことを特徴とする特許請求の範囲第１項記載の
自冷式半導体制御装置。(2) The self-cooling type semiconductor according to claim 1, wherein each of the divided wind tunnels is constituted by a protective cover for an open part of the control box or a wall plate inside the box, and a partition plate that partitions the open part. Control device.
洞板により構成したことを特徴とする特許請求の範囲第
１項記載の自冷式半導体制御装置。(3) The self-cooling type semiconductor control device according to claim 1, wherein the divided wind tunnel is constituted by a wind tunnel plate attached to each semiconductor stack.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5524986A JPS62211939A (en) | 1986-03-13 | 1986-03-13 | Self-cooling type semiconductor controlling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5524986A JPS62211939A (en) | 1986-03-13 | 1986-03-13 | Self-cooling type semiconductor controlling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62211939A true JPS62211939A (en) | 1987-09-17 |
Family
ID=12993320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5524986A Pending JPS62211939A (en) | 1986-03-13 | 1986-03-13 | Self-cooling type semiconductor controlling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62211939A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009123755A (en) * | 2007-11-12 | 2009-06-04 | Toshiba Corp | Electric power conversion device for railway vehicle |
| JP2012214222A (en) * | 2012-06-15 | 2012-11-08 | Toshiba Corp | Power conversion device for rolling stock |
-
1986
- 1986-03-13 JP JP5524986A patent/JPS62211939A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009123755A (en) * | 2007-11-12 | 2009-06-04 | Toshiba Corp | Electric power conversion device for railway vehicle |
| JP2012214222A (en) * | 2012-06-15 | 2012-11-08 | Toshiba Corp | Power conversion device for rolling stock |
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