JPS62207975A - Method and apparatus for monitoring deterioration of semiconductor element at all times - Google Patents
Method and apparatus for monitoring deterioration of semiconductor element at all timesInfo
- Publication number
- JPS62207975A JPS62207975A JP5056486A JP5056486A JPS62207975A JP S62207975 A JPS62207975 A JP S62207975A JP 5056486 A JP5056486 A JP 5056486A JP 5056486 A JP5056486 A JP 5056486A JP S62207975 A JPS62207975 A JP S62207975A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- semiconductor element
- current
- rectifier
- reverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 230000006866 deterioration Effects 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 10
- 238000012544 monitoring process Methods 0.000 title claims description 3
- 238000001514 detection method Methods 0.000 claims description 7
- 238000012806 monitoring device Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000018199 S phase Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体素子劣化の常時監視方法とその装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and apparatus for constantly monitoring deterioration of semiconductor elements.
（従来の技術）
半導体整流素子や、半導体制御整流素子などの寿命は、
半永久的といわれてはいるが、偶発故障や、使用条件な
どに起因する故障もかなり発生しており、電力用素子の
劣化、特に逆耐電圧の低下による事故は、その回路構成
上、短絡事故を惹起し、大事故につながる。(Conventional technology) The lifespan of semiconductor rectifiers, semiconductor-controlled rectifiers, etc.
Although it is said to be semi-permanent, there are quite a few accidental failures and failures caused by usage conditions, etc. Accidents due to deterioration of power elements, especially decreases in reverse withstand voltage, are caused by short circuits due to the circuit configuration. This can lead to serious accidents.
半導体素子の使用数量の増加に伴い事故件数も増加して
おり、大事故の予知とその対策方法が求められている。As the number of semiconductor devices used increases, the number of accidents is also increasing, and there is a need for ways to predict major accidents and take countermeasures against them.
そのため、従来よシ半導体素子の劣化を事前に判定する
方法として２次のような方法が採用されている。Therefore, a secondary method has conventionally been adopted as a method for determining deterioration of a semiconductor element in advance.
■ 半導体カーブトレーサを使用して、半導体素子に印
加する電圧を自動掃引し、その瞬時々々に対応する電流
を連続的にブラウン管に投影し、その影像により所定の
電圧においてその半導体を通過する電流が規定値内にあ
るか否かで半導体素子の良否を判別する方法。■ Using a semiconductor curve tracer, the voltage applied to the semiconductor element is automatically swept, and the current corresponding to each moment is continuously projected onto a cathode ray tube, and the image is used to determine the current passing through the semiconductor at a given voltage. A method of determining the quality of a semiconductor device based on whether or not the value is within a specified value.
■ ＳＣＲチェッカーを使用して、半導体素子に一定の
直流電圧を加え、この時、半導体素子に流れる電流を検
出し、その値が規定値内にあるか否かで半導体素子の良
否を判別する方法。■ A method of applying a constant DC voltage to a semiconductor element using an SCR checker, detecting the current flowing through the semiconductor element, and determining whether the semiconductor element is good or bad based on whether the value is within a specified value. .
（発明が解決しようとする問題点）
これらの方法では、半導体素子の良否の判別が静特性上
の判別であるため１判別の時点において良品とされても
、それらが動作中何か月後、あるいは何か午後に劣化し
事故に至るかはそれぞれの本体的個性及び環境的個性（
取付場所、使用条件）などによシ異なるので、動作中宮
に良品であることを保証できるものではない。(Problems to be Solved by the Invention) In these methods, the determination of whether a semiconductor device is good or bad is based on static characteristics, so even if it is determined to be a good product at the time of the first determination, after many months while it is in operation, Or whether something deteriorates in the afternoon and leads to an accident depends on each body's individuality and environmental characteristics (
Since it depends on the installation location, usage conditions, etc., we cannot guarantee that the product will be of good quality during operation.
また上記従来の方法では９個々の半導体素子の良否を判
別する際に、それらを回路や機器から外さなければなら
ず、多大の労力を必要とする。Furthermore, in the above-mentioned conventional method, when determining whether the nine individual semiconductor elements are good or bad, they must be removed from the circuit or equipment, which requires a great deal of effort.
そのため２個々の半導体素子の実際の動作状態において
それらの劣化を測定、もしくは監視できる方法や装置が
強く要望されていた。Therefore, there has been a strong demand for a method and apparatus that can measure or monitor the deterioration of two individual semiconductor elements under their actual operating conditions.
（問題点を解決するための手段）
本発明は、半導体素子の逆方向耐電圧劣化の状態を半導
体素子が組込まれている回路の動作中にオンラインで検
出して常時表示又は警報出力を出し、これにより半導体
を制御でき、また半導体素子の順方向電流の多少及びバ
ラツキの判別も容易に行える方法とその装置を提供する
ことを目的とするものである◇
以下図面にもとづいて本発明の詳細な説明すると、（１
）は三相動力用変圧器、（２）は変圧器（１）に接続し
た三相線路、（３）は三相線路（２）に接続した整流器
で、プラス側シリコン制御整流素子（４）、 （５Ｌ
（６）と、マイナス側シリコン制御整流素子（７） 、
（８） 、 （９） を接続してなる。α１は整流器
（３）に接続した直流負荷機器、Ｑυ、（１３，（１３
は上記整流素子（４）、 （５）、 １６）のアノード
同局に接続したホール素子、α４）、 ｕｓ、 ｃｔ６
１は上記整流素子（７）、 （８）、 （９）のカソー
ド回路に接続したホール素子、ａ？）はホール素子αυ
、α）、α３及びＩ、 （１５，（１１１９よ多出力さ
れる正及び負の信号電圧を増巾する増巾器で、その出力
側には、逆電流検出用直線整流回路部と、順電流検出用
直線整流回路−とを一接続しである。翰は上記整流回路
α樽の出力端子で、これには電流表示器及び／又は警報
器を接続する。Ｑ〃は上記整流回路（ＩＩの出力端子で
、これには電流表示器を接続する。(Means for Solving the Problems) The present invention detects the state of reverse dielectric strength deterioration of a semiconductor element online during the operation of a circuit in which the semiconductor element is incorporated, and constantly displays or outputs an alarm. The purpose of this invention is to provide a method and device that can control a semiconductor and also easily determine the degree and variation of the forward current of a semiconductor element.The following is a detailed description of the present invention based on the drawings. To explain, (1
) is a three-phase power transformer, (2) is a three-phase line connected to the transformer (1), (3) is a rectifier connected to the three-phase line (2), and the positive side silicon-controlled rectifier element (4) , (5L
(6), negative side silicon controlled rectifier (7),
(8) and (9) are connected. α1 is the DC load equipment connected to the rectifier (3), Qυ, (13, (13
are Hall elements connected to the anodes of the rectifying elements (4), (5), 16), α4), us, ct6
1 is a Hall element connected to the cathode circuit of the rectifying elements (7), (8), and (9), and a? ) is the Hall element αυ
, α), α3 and I, (15, (1119) is an amplifier that amplifies the positive and negative signal voltages that are outputted, and on its output side, there is a linear rectifier circuit for reverse current detection, and a linear rectifier circuit for reverse current detection. It is connected to the linear rectifier circuit for current detection.The wire is the output terminal of the rectifier circuit α, to which a current indicator and/or alarm is connected.Q is the rectifier circuit (II). Connect a current indicator to this output terminal.
（作 用）
第１図において整流素子（７）が正常であれば、印加さ
れる交流の順方向の半サイクルのみ直流負荷機器Ｑ（１
に通電し、逆方向の半サイクルは通電しない。従って第
１図のＰ点を通過する・電流は第２図■に示すような波
形となる。この第２図■中斜線を施した部分Ａは順方向
電流で直流負荷機器Ｑ（１に供給、される電流であり、
またＢは素子に逆電圧が加わった時に流れる漏電流でア
夛、理想的には零であるが、半導体素子の性質上若干の
電流は許容せざるを得ない。半導体素子が劣化してくる
と。(Function) In Fig. 1, if the rectifying element (7) is normal, the DC load device Q (1
is energized, and is not energized for half a cycle in the opposite direction. Therefore, the current passing through point P in FIG. 1 has a waveform as shown in FIG. 2 (■). The hatched area A in Figure 2 is the forward current, which is the current supplied to the DC load device Q (1).
Further, B is a leakage current that flows when a reverse voltage is applied to the element, and ideally it is zero, but due to the nature of the semiconductor element, a certain amount of current must be allowed. When semiconductor elements deteriorate.
この漏電流が増加してくる。この漏電流が整流素子によ
り定まる値を越えると半導体素子中のキャリアが増加し
、電流阻止状態を維持することができなくなり、電子雪
崩現象によシ通電状態に移行し、ｌｔＡ間短絡事故とな
る。This leakage current increases. When this leakage current exceeds a value determined by the rectifying element, carriers in the semiconductor element increase, making it impossible to maintain the current blocking state, and transitioning to a conductive state due to an electron avalanche phenomenon, resulting in an ltA short circuit accident. .
これを第１図で説明すると、三相線路（２）のＲ相のア
点よ）整流素子（７）のカンードを経てダイオードを逆
行し、つ点に抜け、整流素子（８）ヲ経て二点に至る電
流、即ち変圧器（１）の８相、Ｓ相間を短絡する電流と
なり、大きな短絡電流が流れ、変圧器（１）の破損や三
相線路（２）の溶融などの原因となり。To explain this with reference to Figure 1, from point A of the R phase of the three-phase line (2), through the rectifying element (7) cand, going backwards through the diode, exiting to point 2, passing through the rectifying element (8), and then passing through the rectifying element (7). This current leads to a short circuit between the 8-phase and S-phase of the transformer (1), causing a large short-circuit current to flow, causing damage to the transformer (1) and melting of the three-phase line (2).
しいては、工場生産の停止など大きな事故に至る。This can lead to major accidents such as the suspension of factory production.
本発明では、上記漏電流をそれに比例する磁界の変化か
らホール素子ａｎ、鰺、（至）及び（１４）、 ＜１５
． 鰻により正及び負の信号電圧として検出され、その
信号電圧が増巾器αηで増巾された後、整流回路（１８
による逆方向の整流出力及び整流回路α１による順方向
の整流出力としてそれぞれ取り出される。In the present invention, the leakage current is calculated from the change in the magnetic field proportional to the leakage current by the Hall element an, 麺, (to) and (14), <15
．． The eel detects positive and negative signal voltages, and after the signal voltages are amplified by the amplifier αη, the rectifier circuit (18
A rectified output in the reverse direction by the rectifier circuit α1 and a rectified output in the forward direction by the rectifier circuit α1 are respectively taken out.
整流回路舖の出力は、第２図■のような波形となシ、逆
耐圧劣化の予防保全に電流表示、もしくは警報接点出力
として役立てることができ、また整流回路ａ場の出力は
、第２図■のような波形となり、Ｍ方向電圧の上昇や１
回路断線により発生する整流素子の順方向電流の減少を
検出できて、これらの限度管理に役立てることができ、
これは半導体素子を並列運転する場合の管理指標として
も役立つものでおる。The output of the rectifier circuit has a waveform as shown in Figure 2 (■), and can be used as a current display or alarm contact output for preventive maintenance of reverse breakdown voltage deterioration. The waveform becomes as shown in Figure ■, and the M direction voltage increases and
It is possible to detect a decrease in the forward current of a rectifying element caused by a circuit break, and it can be used to manage these limits.
This is also useful as a management index when semiconductor devices are operated in parallel.
（発明の効果）
本発明は、仮止のように構成したから、半導体素子の逆
方向耐電圧劣化の状態を回路の動作中にオンラインで検
出して、常時表示又は警報出力を出し、これによシ牛導
体素子を制御することができ、ｉた半導体素子の順方向
電流の多少及びバラツキの判別も容易に行うことができ
る０(Effects of the Invention) Since the present invention is configured as a temporary fixing, the state of reverse dielectric strength deterioration of a semiconductor element is detected online during circuit operation, and a constant display or alarm output is output. It is possible to control the conductive elements, and it is also possible to easily determine the amount and variation of the forward current of the semiconductor elements.
第１図は本発明装置の回路図、第２図■、■。
■、■は同回路における各要部の波形図である。
（１）・・・変圧器、（３）・・・整流器、 （１（１
・・・直流負荷機器、Ｃ１υｌ Ｃ［Ｌ （１５・・・
ホーに素子、＜１４１１ （１５１１（１１５・＄−に
素子、ａη・・・増巾器、崗・・・逆電流検出用直線整
流回路。
［１・・・順電流検出用直線整流回路。
第１図Fig. 1 is a circuit diagram of the device of the present invention, and Fig. 2 (■, ■). ■ and ■ are waveform diagrams of each main part in the same circuit. (1)...Transformer, (3)...Rectifier, (1(1
...DC load equipment, C1υl C[L (15...
element, <1411 (1511 (115/$- element, aη... amplifier, amplifier... linear rectifier circuit for reverse current detection. [1... linear rectifier circuit for forward current detection. Figure 1
Claims (2)
ル素子を結合して、半導体素子に流れる電流を検出し、
これを順方向電流と逆方向電流の成分に分離し、それぞ
れ表示、警報又は制御を行うことを特徴とする半導体素
子の常時監視方法。(1) A Hall element is coupled to the anode or cathode circuit of the semiconductor element to detect the current flowing through the semiconductor element,
A method for constantly monitoring a semiconductor device, characterized in that the current is separated into forward current and reverse current components, and each is displayed, alarmed, or controlled.
続し、この整流回路の出力側に直流負荷機器を接続して
なる回路において、半導体素子のアノード回路又はカソ
ード回路にホール素子を接続し、このホール素子の出力
側には、増巾器を接続し、この増巾器の出力側には、逆
電流検出用直線整流器と、順電流検出用直線整流器とを
接続することを特徴とする半導体素子劣化の常時監視装
置。(2) In a circuit in which a rectifier circuit using semiconductor elements is connected to an AC transformer and a DC load device is connected to the output side of this rectifier circuit, a Hall element is connected to the anode circuit or cathode circuit of the semiconductor element. , an amplifier is connected to the output side of the Hall element, and a linear rectifier for reverse current detection and a linear rectifier for forward current detection are connected to the output side of the amplifier. Continuous monitoring device for semiconductor element deterioration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5056486A JPS62207975A (en) | 1986-03-10 | 1986-03-10 | Method and apparatus for monitoring deterioration of semiconductor element at all times |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5056486A JPS62207975A (en) | 1986-03-10 | 1986-03-10 | Method and apparatus for monitoring deterioration of semiconductor element at all times |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62207975A true JPS62207975A (en) | 1987-09-12 |
Family
ID=12862497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5056486A Pending JPS62207975A (en) | 1986-03-10 | 1986-03-10 | Method and apparatus for monitoring deterioration of semiconductor element at all times |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62207975A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5949971B2 (en) * | 1981-05-15 | 1984-12-05 | フリ−工業株式会社 | Slope protection method |
-
1986
- 1986-03-10 JP JP5056486A patent/JPS62207975A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5949971B2 (en) * | 1981-05-15 | 1984-12-05 | フリ−工業株式会社 | Slope protection method |
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