JPS62207802A - Apparatus for forming ultrafine particle - Google Patents
Apparatus for forming ultrafine particleInfo
- Publication number
- JPS62207802A JPS62207802A JP5039386A JP5039386A JPS62207802A JP S62207802 A JPS62207802 A JP S62207802A JP 5039386 A JP5039386 A JP 5039386A JP 5039386 A JP5039386 A JP 5039386A JP S62207802 A JPS62207802 A JP S62207802A
- Authority
- JP
- Japan
- Prior art keywords
- ultrafine particles
- arc
- ultrafine
- ultrafine particle
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011882 ultra-fine particle Substances 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 238000007664 blowing Methods 0.000 claims description 10
- 239000000112 cooling gas Substances 0.000 claims description 2
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 238000001816 cooling Methods 0.000 abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
- 239000010937 tungsten Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000006698 induction Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002789 length control Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は超微粒子を高効率に、かつ高品質に生成する際
に好適な装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus suitable for producing ultrafine particles with high efficiency and high quality.
従来の技術は特公昭５５−４４１２５号に記載のように
高周波誘導加熱で溶かした金属に、アークエネルギをあ
てて金属を蒸発させ、さらに必要に応じて別熱源で加熱
したガスを噴出して冷却装置に運ぶ装置があり、この装
置ではまだ十分な生成量が得られず、また生成した超微
粒子の粒径もそろっていない。The conventional technology, as described in Japanese Patent Publication No. 55-44125, is to evaporate metal by applying arc energy to metal melted by high-frequency induction heating, and then, if necessary, cool it by blowing out gas heated by a separate heat source. There is a device that transports the particles to the device, but this device is not yet able to produce a sufficient amount, and the particle sizes of the ultrafine particles produced are not uniform.
上記技術は生成した超微粒子の粒径なそろえるだめの配
慮がされておらず、またアークのエネルギーを十分効率
よく利用していないっ本発明はこの両者を満足させるこ
とが可能な超微粒子生成装置を提供することにある。The above technology does not take into consideration the particle size of the generated ultrafine particles, nor does it utilize arc energy sufficiently efficiently.The present invention is an ultrafine particle generation device that can satisfy both of these requirements. Our goal is to provide the following.
上記目的は（１）斜向電極によるアークを利用する、（
２）アーク雰囲気に熱ピンチ効果の大きいガスを用いる
、（３）高周波パルス電流でアークをピンチさせること
により生成量を高効率化することで達成できる。The above objectives are (1) to utilize an arc by diagonal electrodes; (
This can be achieved by 2) using a gas with a large thermal pinch effect in the arc atmosphere, and (3) increasing the efficiency of the generation amount by pinching the arc with a high-frequency pulse current.
また粒径のそろった高品質超微粒子を得るためには（１
）プラズマフレームに冷却ガスを吹キつける、（２）複
合エネルギーを用いる方法で、−次生成した直後に、再
蒸発させて、冷却すること釦よって達成される。In addition, in order to obtain high quality ultrafine particles with uniform particle size (1
(2) By blowing a cooling gas onto the plasma flame, (2) By using a method using combined energy, the plasma flame is reevaporated and cooled immediately after being generated.
高効率化に関する前記手段の（１）は斜向電極による電
磁力のアンバランスでアークの磁気吹き現象が生じ、そ
の結果金属表面で蒸発した金属蒸気がプラズマ気流で強
制移送されるために、常に新しぃ金属表面が露出し、蒸
発、移送が効率よ（＜す返えされる。前記手段の（２）
は熱ピンチの大きいＨ，、）（、水蒸気、 Ｏ，、Ｎ、
等のガスを利用したり、十分冷却したガスをアーク近傍
に流すことにより、アークが熱ピンチし、その結果アー
クが金属表面に集中して、効率よく蒸発を促進する。ま
た分子ガスを利用するとアーク熱で解離したガス原子が
、金属表面で分子化する際に発生するエネルギーで金属
表面を加熱し、より効率よく蒸発させることができる。(1) of the above means for improving efficiency is that the magnetic arc blowing phenomenon occurs due to the imbalance of electromagnetic force caused by the diagonal electrodes, and as a result, the metal vapor evaporated on the metal surface is forcibly transported by the plasma airflow, so The new metal surface is exposed, and the evaporation and transfer are efficient (returned.
is a large thermal pinch H, ) (, water vapor, O,, N,
By using a gas such as, or by flowing a sufficiently cooled gas near the arc, the arc is thermally pinched, and as a result, the arc is concentrated on the metal surface, promoting efficient evaporation. Furthermore, when molecular gas is used, the gas atoms dissociated by arc heat are generated when molecules form on the metal surface, which heats the metal surface and evaporates it more efficiently.
また前期手段の（３）でアーク電流をパルス電流にする
ととＫより、電磁ピンチ力によりアークをピンチさせ、
金属表面を効率よく蒸発させることができる。Also, if the arc current is made into a pulse current in step (3) of the previous step, the arc will be pinched by the electromagnetic pinch force,
Metal surfaces can be efficiently evaporated.
高品質化に関する前期手段の（１）はプラズマフレーム
中の金属蒸気に、冷却したガスを吹きつけて急冷するこ
とにより、超微粒子の粒径生長を停止させることができ
、粒径の整った超微粒子を得ることができる。また前期
手段の（２）はプラズマフレームで移送された超微粒子
を他の熱源で再蒸発させ、冷却する方法で、冷却速度の
制御により所望−〇粒径分布の超微粒子を得ることがで
きる。また再蒸発した時に、メタン、アンモニア、１ｌ
ｌｉ窒素ガス等の反応ガスを添加することＫより、種々
の化合物超微粒子、酸化物超微粒子、炭火物超微粒子、
窒化物超微粒子等を得ることができる。(1) of the first method for improving quality is that by rapidly cooling the metal vapor in the plasma flame by blowing cooled gas, it is possible to stop the particle size growth of ultrafine particles, and it is possible to stop the particle size growth of ultrafine particles. Fine particles can be obtained. The first method (2) is a method in which the ultrafine particles transferred by the plasma flame are reevaporated using another heat source and cooled, and ultrafine particles with a desired -0 particle size distribution can be obtained by controlling the cooling rate. Also, when re-evaporated, methane, ammonia, 1 liter
By adding a reactive gas such as li nitrogen gas, various ultrafine compound particles, ultrafine oxide particles, ultrafine charcoal particles,
Ultrafine nitride particles etc. can be obtained.
超微粒子を生成する装置の実施例を第１図に示す５発生
室１で生成した超微粒子は循環ガスによって冷却器１０
を通して捕集室１１に運ばれフィルター１１ＡＫ捕捉さ
れろうなおガスは循環ポンプ１６によって発生室１に送
り返される。ここでタングステン又は安定剤としてトリ
ウム、シリコニウム等の入ったタングステン電極２を吸
引孔４と反対側に５０〜６０度傾け、負荷電圧の十分高
い、例えば８０ｖを重下特性の電源６を用いて、熱ピン
チ効果の大きいヘリウム、水素、水蒸気。An embodiment of an apparatus for generating ultrafine particles is shown in FIG.
The remaining gas that would be transported to the collection chamber 11 through the filter 11AK and captured by the filter 11AK is sent back to the generation chamber 1 by the circulation pump 16. Here, the tungsten electrode 2 containing tungsten or thorium, siliconium, etc. as a stabilizer is tilted 50 to 60 degrees to the side opposite to the suction hole 4, and using a power supply 6 with a sufficiently high load voltage, for example, 80V, Helium, hydrogen, and water vapor have a large thermal pinch effect.
窒素、酸素等のガス、又はアルゴンとの混合ガス雰囲気
でアーク１９を発生させ、このエネルギーで母材５を溶
融、蒸発させて超微粒子を生成するっこの時、電極２の
斜向化により、電磁力のアンバランスが生じ、磁気吹き
効果で生成した超微粒子が吸引孔４に向って移行する。An arc 19 is generated in a mixed gas atmosphere with a gas such as nitrogen, oxygen, or argon, and the base material 5 is melted and evaporated with this energy to generate ultrafine particles.At this time, by tilting the electrode 2, An imbalance of electromagnetic force occurs, and ultrafine particles generated by the magnetic blowing effect move toward the suction hole 4.
その結果、新しい金属表面がくり返し表われるので高効
率に超微粒子を生成することができるっ電極２を頌けな
い場合と傾けて磁気吹き効果で生成した場合の、各種材
料の生成量比較を第１表に示すっ表から分るように材料
によって異なるが、多いものでは２６倍の生成量が得ら
れることが分る。なお、アーク電流を増大すれば第２表
に示すようにより生成量は相対的に増大する。なお、第
１図において、７はアーク長制御装置、８は母材５を上
下させるためのモータ、９．１０はガスを冷却する冷却
器、１２はバルブ、１５はガス圧力、流量を制御する圧
力流量調整器、１４はガスボンベ、１５は真空ポンプ、
１６はガスを循環させるための循環ポンプ、１７は冷却
水入口、１８は冷却水出口であるっまたアーク１９をピ
ンチさせて、母材表面の熱集中を高めて、生成量を増大
させるために、第２表に示したようにピンチ効果の大き
いＨ，ガス 又は水蒸気、Ｈ・、 Ｎ、 、 ０
． ガスを雰囲気に使用するとよい。また第２図（ａ）
（ｂ）に示すピンチガス供給器５により、アーク周辺又
は近傍に、液体窒素又は水等で冷却（第１図参照）した
ガスを吹きつけると有効である。As a result, new metal surfaces appear over and over again, making it possible to generate ultrafine particles with high efficiency.A comparison of the amounts of various materials produced when the electrode 2 is not placed and when it is tilted and generated using the magnetic blowing effect. As can be seen from the table shown in Table 1, it varies depending on the material, but it can be seen that 26 times the production amount can be obtained with a large amount. Note that, as shown in Table 2, as the arc current increases, the amount produced increases relatively. In Fig. 1, 7 is an arc length control device, 8 is a motor for moving the base material 5 up and down, 9.10 is a cooler for cooling the gas, 12 is a valve, and 15 is a gas pressure and flow rate control device. A pressure flow regulator, 14 a gas cylinder, 15 a vacuum pump,
16 is a circulation pump for circulating gas; 17 is a cooling water inlet; 18 is a cooling water outlet; , as shown in Table 2, H, gas or water vapor, which has a large pinch effect, H, N, , 0
．． It is recommended to use gas as an atmosphere. Also, Figure 2(a)
It is effective to spray gas cooled with liquid nitrogen or water (see FIG. 1) around or near the arc using the pinch gas supply device 5 shown in (b).
さらにアーク１９の電流波形を第４図に示すように、５
ＱＨｚ〜２０ ＫＨｚの高周波電流にすることによって
、アーク１９はピンチされ、母材表面への熱集中を高め
、高効率に蒸発超微粒子を提進することができる。アー
ク１９のピンチは第５図に示すように、電極２の周囲に
ピンチ効果の大きい水素ガス、Ｈ・ ガス等をピンチガ
スノズル２０を通して別途流すこと疋よっても、同様の
効果が得られる。なお、図中２１は母材台である。また
高周波電流とピンチガスを併用することで、より高効率
化が可能である。Furthermore, the current waveform of the arc 19 is as shown in FIG.
By using a high frequency current of QHz to 20 KHz, the arc 19 is pinched, heat concentration on the base material surface is increased, and vaporized ultrafine particles can be propelled with high efficiency. As shown in FIG. 5, the pinching of the arc 19 can also be achieved by separately flowing hydrogen gas, H. gas, etc., which have a large pinching effect, around the electrode 2 through a pinch gas nozzle 20. In addition, 21 in the figure is a base material stand. Further, higher efficiency can be achieved by using a high frequency current and pinch gas together.
第 １ 表
θ：母材に対する電離角度
アーク電流：２０ＯＡ
雰囲気ガ、ｘ、 ： Ａｒ ＋ ５０％Ｈ２第２表
電極：φ６．４タングステン
母材：Ｎｉ
次に超微粒子の品質を向上するためには、粒径の分布範
囲を狭くする必要があるっその手段として、第５図に示
すように冷却ガス供給器２２により、冷却ガスを冷却ガ
ス人口２５から液体窒素、水等で十分冷却し、冷却ガス
出口２４から吸引孔４に向って吹き出し、プラズマフレ
ーム中の母材蒸気を急冷しながら吸引孔４に吸い込むよ
うにした循環ガスを母材蒸気を含むプラズマガスに吹き
付けることでも同様の効果が得られる。Table 1: θ: Ionization angle relative to base material Arc current: 20OA Atmosphere, x: Ar + 50% H2 Table 2 Electrode: φ6.4 Tungsten Base material: Ni Next, to improve the quality of ultrafine particles As a further means for narrowing the particle size distribution range, as shown in FIG. A similar effect can be obtained by blowing circulating gas, which is blown out from the gas outlet 24 toward the suction hole 4 and sucked into the suction hole 4 while rapidly cooling the base material vapor in the plasma flame, onto the plasma gas containing the base material vapor. It will be done.
また発生室１から出た移送中の超微粒子を別熱源、例え
ば高周波誘導プラズマ、赤外線ヒータ。In addition, the ultrafine particles being transferred out of the generation chamber 1 are treated with another heat source, such as a high frequency induction plasma or an infrared heater.
抵抗加熱等により再蒸発させて、冷却することにより、
粒径の整った超微粒子が得られるっ第６図は発生室１の
吸引孔４と捕集室１１間に石英管２６を取りつけ、これ
に高周波誘導コイル２５を巻き、接続された発信器２８
．整合器２７を通し、捕集するものである。なお、図に
おいて５０は冷却水入口、５１は冷却水出口、５２は反
応ガス供給口である７発生室１のアークフレーム１９、
母材蒸気に誘導コイル２５を接近させて配置することで
、より安定なプラズマが得られる。アルゴン・水素ガス
雰囲気中でタングステン電極とニッケル母材間にアーク
を発生させ、蒸発したニッケルの超微粒子を高周波誘導
プラズマで再蒸発させ、急冷して得た超微粒子の粒度分
布を第７図に示すつアークエネルギで得た超微粒子に比
較して、整粒化されている様子がわかろう
使用する材料に合金を用いて、その合金の組成を適宜選
定することにより、所望の組成の超微粒子が得られる。By reevaporating and cooling using resistance heating, etc.
Ultrafine particles with a uniform particle size can be obtained. Fig. 6 shows a quartz tube 26 installed between the suction hole 4 of the generation chamber 1 and the collection chamber 11, a high-frequency induction coil 25 wound around it, and a transmitter 28 connected to it.
．． It passes through a matching box 27 and collects it. In the figure, 50 is a cooling water inlet, 51 is a cooling water outlet, and 52 is a reactant gas supply port. 7 Arc frame 19 of the generation chamber 1;
By arranging the induction coil 25 close to the base material vapor, more stable plasma can be obtained. Figure 7 shows the particle size distribution of the ultrafine particles obtained by generating an arc between the tungsten electrode and the nickel base material in an argon/hydrogen gas atmosphere, reevaporating the evaporated ultrafine nickel particles using high-frequency induction plasma, and rapidly cooling them. It can be seen that the grains are more regular compared to the ultrafine particles obtained using arc energy. By using an alloy as the material and selecting the composition of the alloy appropriately, ultrafine particles with the desired composition can be obtained. is obtained.
また雰囲気ガスに徨々の反応ガス（アンモニア、メタン
、窒素、酸素等）を混合することにより、所望の化合物
超微粒子（炭化物。In addition, by mixing various reactive gases (ammonia, methane, nitrogen, oxygen, etc.) with the atmospheric gas, ultrafine particles of the desired compound (carbide) can be produced.
窒化物、酸化物等）が得られるっ
〔発明の効果〕
本発明によれば種々の金属、合金、化合物を高効率で多
量に得られ、また整粒化された高品質な超微粒子が得ら
れる。[Effects of the Invention] According to the present invention, various metals, alloys, and compounds can be obtained in large quantities with high efficiency, and sized, high-quality ultrafine particles can be obtained. It will be done.
第１図から第７図は本発明に係る超微粒子生成装置の断
面図で、第１図は装置の断面図、第２図はピンチガス供
給器の詳細図、第５図はピンチガスを電極周囲から供給
する説明図、第４図は高周波電流を用いてアークをピン
チさせる時の′電流波形の説明図、第５図は母材蒸気を
急冷して超微粒子の粒径を一様化する説明図、第６図は
他の実施例の部分図、ｗｃＺ図は従来の装置と本発明装
置とにより生成された超微粒子の粒径分布図であるっ第
１ 図
第 ２ 図
第゛３図
第４図
第 ５ 図
２２− 吟糎ゼ′虐命器
第 ６ 図
（ｎｍ）Figures 1 to 7 are cross-sectional views of the ultrafine particle generation device according to the present invention, where Figure 1 is a cross-sectional view of the device, Figure 2 is a detailed view of the pinch gas supply device, and Figure 5 is the pinch gas supplied from around the electrodes. Figure 4 is an explanatory diagram of the current waveform when pinching the arc using high-frequency current, and Figure 5 is an explanatory diagram of how the base metal vapor is rapidly cooled to make the particle size of ultrafine particles uniform. , FIG. 6 is a partial view of another example, and the wcZ diagram is a particle size distribution diagram of ultrafine particles produced by the conventional device and the device of the present invention. Figure 5 Figure 22- Ginze's death device Figure 6 (nm)
Claims (1)
、母材に対して電極を傾斜させてアークに磁気吹きを生
じさせ、吹かれた方向に吸引孔を設け、生成した金属蒸
気を冷却して、捕集する超微粒子生成装置。 ２、アーク周辺に冷却したガスを供給して生成する特許
請求の範囲第１項記載の超微粒子生成装置。 ３、アーク電源に負荷電圧２０〜８０Ｖ、２００〜３０
０Ａの重下特性電源を用いて生成する特許請求の範囲第
２項記載の超微粒子生成装置。 ４、アーク電流に５０Ｈｚ〜２０ＫＨｚのパルス電流を
用いて生成する特許請求の範囲第３項記載の超微粒子生
成装置。 ５、アーク近傍より吸引孔に向って冷却ガスを吹きつけ
て、超微粒子を生成する特許請求の範囲第１項記載の超
微粒子生成装置。 ６、超微粒子発生室と捕集空間に超微粒子を再蒸発させ
る熱源を設けた特許請求の範囲第１項記載の超微粒子生
成装置。 ７、再蒸発熱源と捕集室間に急冷装置を設けた特許請求
の範囲第１項記載の超微粒子生成装置。[Claims] 1. In a device that generates ultrafine particles using arc energy, the electrode is tilted with respect to the base material to cause magnetic blowing in the arc, and suction holes are provided in the direction of the blowing, so that the generated metal Ultrafine particle generator that cools and collects steam. 2. The ultrafine particle generation device according to claim 1, which generates ultrafine particles by supplying cooled gas around the arc. 3. Load voltage 20-80V on arc power supply, 200-30V
The ultrafine particle generation device according to claim 2, which generates ultrafine particles using a 0A power supply with low voltage characteristics. 4. The ultrafine particle generation device according to claim 3, which generates ultrafine particles by using a pulse current of 50 Hz to 20 KHz as an arc current. 5. The ultrafine particle generation device according to claim 1, which generates ultrafine particles by blowing cooling gas toward the suction hole from near the arc. 6. The ultrafine particle generation device according to claim 1, wherein the ultrafine particle generation chamber and the collection space are provided with a heat source for reevaporating the ultrafine particles. 7. The ultrafine particle generating device according to claim 1, wherein a quenching device is provided between the reevaporation heat source and the collection chamber.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5039386A JPS62207802A (en) | 1986-03-10 | 1986-03-10 | Apparatus for forming ultrafine particle |
| US06/898,600 US4732369A (en) | 1985-10-30 | 1986-08-21 | Arc apparatus for producing ultrafine particles |
| DE8686111902T DE3687157T2 (en) | 1985-10-30 | 1986-08-28 | DEVICE FOR PRODUCING ULTRAFINE POWDERS. |
| EP86111902A EP0220420B1 (en) | 1985-10-30 | 1986-08-28 | Apparatus for producing ultrafine particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5039386A JPS62207802A (en) | 1986-03-10 | 1986-03-10 | Apparatus for forming ultrafine particle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62207802A true JPS62207802A (en) | 1987-09-12 |
Family
ID=12857628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5039386A Pending JPS62207802A (en) | 1985-10-30 | 1986-03-10 | Apparatus for forming ultrafine particle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62207802A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004512943A (en) * | 2000-11-09 | 2004-04-30 | サイプラス・アマックス・ミネラルズ・カンパニー | Method and apparatus for producing molybdenum oxide nanoparticles |
| JP2008528259A (en) * | 2005-01-28 | 2008-07-31 | テクナ・プラズマ・システムズ・インコーポレーテッド | Inductive plasma synthesis of nanopowder |
| US7883673B2 (en) | 2000-11-09 | 2011-02-08 | Cyprus Amax Minerals Company | Apparatus for producing nano-particles of molybdenum oxide |
| CN104607647A (en) * | 2015-02-13 | 2015-05-13 | 江永斌 | Continuous collecting device of ultrafine metal powder production equipment |
| JP2022096622A (en) * | 2020-12-17 | 2022-06-29 | 江蘇博遷新材料有限公司 | Apparatus for manufacturing super fine powder for plasma arc atomizing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5854166A (en) * | 1981-09-24 | 1983-03-31 | 新進通信株式会社 | Standard structure |
| JPS59166605A (en) * | 1983-03-11 | 1984-09-20 | Tokyo Tekko Kk | Apparatus for preparing ultra-fine particle |
| JPS60224706A (en) * | 1984-04-20 | 1985-11-09 | Hitachi Ltd | Production of ultrafine metallic particles |
| JPS60228605A (en) * | 1984-04-27 | 1985-11-13 | Hitachi Ltd | Manufacture of hyperfine particles |
| JPS60228609A (en) * | 1984-04-27 | 1985-11-13 | Hitachi Ltd | Production of ultrafine particles |
-
1986
- 1986-03-10 JP JP5039386A patent/JPS62207802A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5854166A (en) * | 1981-09-24 | 1983-03-31 | 新進通信株式会社 | Standard structure |
| JPS59166605A (en) * | 1983-03-11 | 1984-09-20 | Tokyo Tekko Kk | Apparatus for preparing ultra-fine particle |
| JPS60224706A (en) * | 1984-04-20 | 1985-11-09 | Hitachi Ltd | Production of ultrafine metallic particles |
| JPS60228605A (en) * | 1984-04-27 | 1985-11-13 | Hitachi Ltd | Manufacture of hyperfine particles |
| JPS60228609A (en) * | 1984-04-27 | 1985-11-13 | Hitachi Ltd | Production of ultrafine particles |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004512943A (en) * | 2000-11-09 | 2004-04-30 | サイプラス・アマックス・ミネラルズ・カンパニー | Method and apparatus for producing molybdenum oxide nanoparticles |
| US7749463B2 (en) | 2000-11-09 | 2010-07-06 | Cyprus Amax Minerals Company | Apparatus for producing nano-particles of molybdenum oxide |
| US7829060B2 (en) | 2000-11-09 | 2010-11-09 | Cyprus Amax Minerals Company | Nano-particles of molybdenum oxide |
| US7883673B2 (en) | 2000-11-09 | 2011-02-08 | Cyprus Amax Minerals Company | Apparatus for producing nano-particles of molybdenum oxide |
| JP2008528259A (en) * | 2005-01-28 | 2008-07-31 | テクナ・プラズマ・システムズ・インコーポレーテッド | Inductive plasma synthesis of nanopowder |
| CN104607647A (en) * | 2015-02-13 | 2015-05-13 | 江永斌 | Continuous collecting device of ultrafine metal powder production equipment |
| JP2022096622A (en) * | 2020-12-17 | 2022-06-29 | 江蘇博遷新材料有限公司 | Apparatus for manufacturing super fine powder for plasma arc atomizing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH10507227A (en) | Apparatus and method for forming uniform thin films on large substrates | |
| JPS63274762A (en) | Device for forming reaction vapor-deposited film | |
| JPS6254005A (en) | Production of hyperfine particles | |
| JPS62207802A (en) | Apparatus for forming ultrafine particle | |
| JPH03505104A (en) | Plasma treatment method and plasmatron | |
| JPH0524988B2 (en) | ||
| WO2001008795A1 (en) | Fine particle manufacturing method using laser beam | |
| JP2002220601A (en) | Production method for low oxygen spherical metal powder using dc thermal plasma processing | |
| JPS60224706A (en) | Production of ultrafine metallic particles | |
| JP2002069664A (en) | Method and apparatus for plasma processing | |
| JPH01292828A (en) | Induction plasma application apparatus | |
| JPH05266991A (en) | Magnetic drive plasma reaction device | |
| JP4521174B2 (en) | Cluster manufacturing apparatus and cluster manufacturing method | |
| JP2716844B2 (en) | Thermal spray composite film forming method | |
| Bica | Plasma device for magnetic nanoparticles production | |
| JP2595365B2 (en) | Thermal plasma jet generator | |
| JPH1053866A (en) | Gas control type arc device and its method | |
| TWI285066B (en) | Plasma torch apparatus | |
| JPS61261201A (en) | Method for producing metal oxide fine powder and apparatus therefor | |
| JP2505375B2 (en) | Method and apparatus for forming compound film | |
| JPH03215671A (en) | Cvd method and device by sheet plasma | |
| JPH01201481A (en) | Method and apparatus for vapor phase synthesis of high-pressure phase boron nitride | |
| JPS60228609A (en) | Production of ultrafine particles | |
| JP2505376B2 (en) | Film forming method and apparatus | |
| JPH07316774A (en) | Low-pressure plasma thermal spraying method |