JPS62206821A - Electron-beam annealing device - Google Patents
Electron-beam annealing deviceInfo
- Publication number
- JPS62206821A JPS62206821A JP61049722A JP4972286A JPS62206821A JP S62206821 A JPS62206821 A JP S62206821A JP 61049722 A JP61049722 A JP 61049722A JP 4972286 A JP4972286 A JP 4972286A JP S62206821 A JPS62206821 A JP S62206821A
- Authority
- JP
- Japan
- Prior art keywords
- linear
- electron
- sample
- mask
- beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 26
- 238000000137 annealing Methods 0.000 title claims abstract description 11
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電子ビームアニール装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an electron beam annealing apparatus.
従来、半導体基板等を熱り＆理するためビームの断面形
状がほぼ矩形（線状）である線状電子ビームアニール装
置が用いられてきた（［゛エネルギビーム加工ｊｇｔ機
学会エネルギビーム分科会編、リアライズ社、１９８５
年、２６８頁参照）。Conventionally, a linear electron beam annealing device in which the cross-sectional shape of the beam is approximately rectangular (linear) has been used to heat and process semiconductor substrates, etc. , Realize, 1985
(see 2010, p. 268).
従来の線状電子ビームアニール装置では、第２図の断面
構成図に示した様に、試料１１表面における線状電子ビ
ーム４（本図では代表的な２本の電子線軌跡のみ示す）
の幅（長辺の長さ）は、線状カソード１の幅や電子レン
ズ５等の電子銃や電子光学系によって調整されるが、線
状カソードの熱安定性が良くないことや、電子工学系に
非軸対称系を用いなければならないこと等の理由で、線
状電子ビームの幅を精度良く制御することは困難であっ
た。In the conventional linear electron beam annealing apparatus, as shown in the cross-sectional diagram of FIG.
The width (length of the long side) is adjusted by the width of the linear cathode 1, an electron gun such as the electron lens 5, and an electron optical system. It has been difficult to precisely control the width of the linear electron beam because the system must be non-axisymmetric.
電子ビームアニールによってシリコン素子を形成するた
めの絶縁物上にシリコン結晶薄膜（Ｓ。A silicon crystal thin film (S.
Ｉ ： ５ｉｌｉｃｏｎ−Ｏｎ−Ｉｎｓｕｌａｔｏｒ）
を形成する場合には、電子ビーム走査によって溶融・固
化した領域の両側面では結晶粒界が発生しやすいので、
溶融領域の端、すなわち線状電子ビームの両端がチップ
とチップの間の切りしろ（幅約１００μｍ）の部分にく
ることが望まれるが、従来の線状電子ビームアニール装
置では、その様な精密な制御は不可能であった。I: 5ilicon-On-Insulator)
When forming a crystal grain, grain boundaries are likely to occur on both sides of the region melted and solidified by electron beam scanning.
It is desired that the edges of the melting region, that is, both ends of the linear electron beam, be located at the cutting margin (width approximately 100 μm) between the chips, but conventional linear electron beam annealing equipment cannot achieve such precision. control was impossible.
本発明の目的は、このような問題を解決し、アニール領
域を精度よく加工できる線状電子ビームアニール装置を
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a linear electron beam annealing apparatus that can solve these problems and process an annealed region with high precision.
本発明の電子ビームアニール装置は、電子ビーム断面が
線状となる電子ビーム通路途中の一箇所に、長手方向の
ビーム断面の幅を限定する開口を有゛するマスクを設け
、このマスクの開口を通過する線状電子ビームを投影電
子レンズにより試料上に結像させることを特徴とする。In the electron beam annealing apparatus of the present invention, a mask having an aperture that limits the width of the beam cross section in the longitudinal direction is provided at one point in the electron beam path where the cross section of the electron beam is linear. It is characterized in that the passing linear electron beam is imaged onto the sample by a projection electron lens.
（作用）
本発明の線状電子ビームアニール装置によれば、マスク
の開口幅を所定の寸法に選びかつ、投影レンズにより所
要の寸法（幅）の線状電子ビームを試料の所定領域へ限
定照射することが可能となる。(Function) According to the linear electron beam annealing apparatus of the present invention, the aperture width of the mask is selected to a predetermined size, and a linear electron beam of the desired size (width) is irradiated in a limited manner onto a predetermined region of a sample using a projection lens. It becomes possible to do so.
そして試料と電子ビームとの相対移動により、試料面の
アニールすべき領域を、順次に精度よくアニールし、線
状電子ビームの幅の両端部は、試料上の問題を生じない
部分にくるようにすることができる。Then, by moving the sample and the electron beam relative to each other, the areas to be annealed on the sample surface are annealed in sequence with high precision, and both ends of the width of the linear electron beam are placed in areas that do not cause problems on the sample. can do.
第１図は本発明の一実施例の主要な構成を示した断面図
である２鏡筒７内の線状カソード１．ウェネルト電極２
及び陽極３等から構成される電子銃で形成される線状ソ
ース２１（ビーム断面の短辺方向寸法が最小となるとこ
ろ）は、第１の電子レンズ５でマスク９の位置に線状ビ
ーム２２となって結像する。開口１０の幅より大きな寸
法のこの線状ビーム２２は、マスク９の開口１０により
限定され所定の寸法の線状ビームとして出射し、第２の
投影用電子レンズ１５により試料１１の上に所定領域に
所望の寸法の線状ビーム２３として結像投射される。試
料１１は試料室８内の試料ホルダ１２で支持され、必要
により図示していないヒータ等により予熱される。試料
ホルダ１２は同駆動系１３により動がされ、試料１１の
所定領域が、順次に制度よくアニールされる。線状ビー
ム２３と試料１１の相対移動は、このように試料ホルダ
駆動系のみで行えるが、電子ビーム偏向走査系単独また
は両者併用によって行うようにしてもよい。FIG. 1 is a cross-sectional view showing the main structure of an embodiment of the present invention, in which a linear cathode 1. Wehnelt electrode 2
A linear source 21 formed by an electron gun (where the short side dimension of the beam cross section is the smallest) is formed by an electron gun consisting of an anode 3 and the like. It forms an image. This linear beam 22 with a dimension larger than the width of the aperture 10 is limited by the aperture 10 of the mask 9 and is emitted as a linear beam with a predetermined dimension, and is projected onto the sample 11 in a predetermined area by the second projection electron lens 15. The image is projected as a linear beam 23 of desired dimensions. The sample 11 is supported by a sample holder 12 in the sample chamber 8, and is preheated by a heater or the like (not shown) if necessary. The sample holder 12 is moved by the drive system 13, and predetermined areas of the sample 11 are sequentially and accurately annealed. Although the linear beam 23 and the sample 11 can be moved relative to each other using only the sample holder driving system as described above, it may also be performed using the electron beam deflection and scanning system alone or in combination with both.
マスク９は良伝導性あるいは高融点の金属を用１いるの
が望ましく、また必要により水冷ｆｉ横を付して、線状
ビーム２２の照射による損傷を防ぐ。The mask 9 is preferably made of a metal with good conductivity or a high melting point, and is provided with a water cooling fi side if necessary to prevent damage caused by irradiation with the linear beam 22.
そしてマスク９の開口１０の位置や幅を調節可能な方式
にしておくと便利である。さらに、マスク９への入射電
流をチェック可能なようにして、その電流値が所定範囲
にあることをモニタすれば、アニールの安定化に役立つ
こともある。It is convenient to make the position and width of the opening 10 of the mask 9 adjustable. Furthermore, making it possible to check the current incident on the mask 9 and monitoring whether the current value is within a predetermined range may help stabilize the annealing.
なお、マスク９に入射するビーム電流密度を下げてマス
ク９の損傷をできるだけ少くするためには、第１の電子
レンズ５で電子ビームを拡大投影し、第２の電子レンズ
１５で縮小投影するのが有利である。Note that in order to reduce the beam current density incident on the mask 9 and to minimize damage to the mask 9, the first electron lens 5 is used to enlarge and project the electron beam, and the second electron lens 15 is used to reduce and project the electron beam. is advantageous.
また、本実施例では、２段の電子レンズ５．１５を用い
ているが、電子レンズの段数が２段以外の場合でも、本
発明の装置を実現し得ることは言うまでもない。Further, in this embodiment, two stages of electron lenses 5.15 are used, but it goes without saying that the apparatus of the present invention can be realized even when the number of stages of electron lenses is other than two.
以上述べたとおり、本発明の構成によれば、アニールさ
れる領域はマスクによって精度良く規定することができ
る。また、マスクと試料は離れているので、それぞれの
調節機構等は独立の比較的簡単な構成とすることができ
る。そして、マスクから多少の蒸発物などが発生しても
、試料への影響は無視できる程度にするのが容易である
という効果も得られる。As described above, according to the configuration of the present invention, the region to be annealed can be defined with high precision by the mask. Furthermore, since the mask and the sample are separated, each adjustment mechanism can be independent and relatively simple. Further, even if some evaporated matter is generated from the mask, the effect on the sample can be easily minimized to a negligible extent.
第１図は本発明の一実施例の概略断面図、第２図は従来
の装置の概略断面図である。FIG. 1 is a schematic sectional view of one embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional device.
Claims (1)
線状源に、断面長手方向のビーム幅を限定する開口を有
するマスクを設け、このマスクの開口を通過する線状電
子ビームを投影電子レンズにより試料上に結像するよう
にしたことを特徴とする電子ビームアニール装置。A mask having an aperture that limits the beam width in the longitudinal direction of the cross section is provided at a linear source in the middle of the electron beam path where the beam cross section is linear, and the linear electron beam passing through the aperture of this mask is projected. An electron beam annealing device characterized in that an image is formed on a sample using a lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61049722A JPS62206821A (en) | 1986-03-06 | 1986-03-06 | Electron-beam annealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61049722A JPS62206821A (en) | 1986-03-06 | 1986-03-06 | Electron-beam annealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62206821A true JPS62206821A (en) | 1987-09-11 |
Family
ID=12839080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61049722A Pending JPS62206821A (en) | 1986-03-06 | 1986-03-06 | Electron-beam annealing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62206821A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0222811A (en) * | 1988-07-12 | 1990-01-25 | Agency Of Ind Science & Technol | Electronic beam heating apparatus |
-
1986
- 1986-03-06 JP JP61049722A patent/JPS62206821A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0222811A (en) * | 1988-07-12 | 1990-01-25 | Agency Of Ind Science & Technol | Electronic beam heating apparatus |
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