JPS62199661A - Resin composition for inner coating of semiconductor - Google Patents
Resin composition for inner coating of semiconductorInfo
- Publication number
- JPS62199661A JPS62199661A JP61040379A JP4037986A JPS62199661A JP S62199661 A JPS62199661 A JP S62199661A JP 61040379 A JP61040379 A JP 61040379A JP 4037986 A JP4037986 A JP 4037986A JP S62199661 A JPS62199661 A JP S62199661A
- Authority
- JP
- Japan
- Prior art keywords
- polysiloxane
- group
- formula
- weight
- viscosity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 239000011342 resin composition Substances 0.000 title claims description 22
- 238000000576 coating method Methods 0.000 title description 22
- 239000011248 coating agent Substances 0.000 title description 21
- -1 polysiloxane Polymers 0.000 claims abstract description 76
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 69
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 39
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 36
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 17
- 238000007259 addition reaction Methods 0.000 claims abstract description 16
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 11
- 239000007809 chemical reaction catalyst Substances 0.000 claims abstract description 10
- 229910000077 silane Inorganic materials 0.000 claims abstract description 9
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 4
- 229920002554 vinyl polymer Polymers 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 29
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 239000003054 catalyst Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 8
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VCYDUTCMKSROID-UHFFFAOYSA-N 2,2,4,4,6,6-hexakis-phenyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound O1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 VCYDUTCMKSROID-UHFFFAOYSA-N 0.000 description 1
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical group CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- XAVQZBGEXVFCJI-UHFFFAOYSA-M lithium;phenoxide Chemical compound [Li+].[O-]C1=CC=CC=C1 XAVQZBGEXVFCJI-UHFFFAOYSA-M 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical group COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体チップの表面を保護するためのいわゆる
インナーコート用樹脂組成物に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a so-called inner coat resin composition for protecting the surface of a semiconductor chip.
〈従来の技術〉
半導体のインナーコートとは半導体チップを樹脂で封止
加工する際および該樹脂の硬化の収縮応力による半導体
表面の損傷防止、あるいはボンディングワイヤーの接続
を保護するために、半導体チップ表面に予め保護層とし
てコーティングするものである。<Conventional Technology> What is an inner coat for a semiconductor? When a semiconductor chip is sealed with a resin, it is used to prevent damage to the semiconductor surface due to shrinkage stress caused by curing of the resin, or to protect the connection of bonding wires. It is coated in advance as a protective layer.
第１図は半導体チップにインナーコートを施した半導体
装置の一例を示すものであシ、すなわちインナーコート
層１を有する半導体チップ２が半導体基板としてのリー
ドフレーム７ａ上にダイメンディング用接着層６にょシ
接着固定された状態を示す。３は上記チツｆ２上に形成
された電極５と他のリードフレーム７ｂ、７ｅとを接続
したデンディングワイヤーで４は該デンディングワイヤ
ーの先端部であり、又、８は上記各構成要素の封止樹脂
である。FIG. 1 shows an example of a semiconductor device in which a semiconductor chip is coated with an inner coat. In other words, a semiconductor chip 2 having an inner coat layer 1 is placed on a lead frame 7a serving as a semiconductor substrate with an adhesive layer 6 for die-mending. It shows the state where it is glued and fixed. Reference numeral 3 denotes a ending wire connecting the electrode 5 formed on the chip f2 and the other lead frames 7b and 7e, 4 is the tip of the ending wire, and 8 is a seal of each of the above-mentioned components. It is a stop resin.
半導体チップ上に樹脂をインナーコートするには通常、
ディスペンサーのごとき装置を使用し、細孔よシ定量さ
れた樹脂組成物を液滴としてチップ表面に自然落下させ
、チップ表面全域およびデンディングワイヤー先端部を
十分被覆するよう液滴を拡散後、硬化して被覆層を形成
するものである。To apply resin inner coating on semiconductor chips, usually
Using a device such as a dispenser, droplets of the resin composition measured through the pores are allowed to fall naturally onto the chip surface, and the droplets are spread to sufficiently cover the entire chip surface and the tip of the dendritic wire, and then cured. to form a coating layer.
従来のインナーコート用樹脂はシリコーン系のグルやゴ
ムが使用されてきた。こうしたシリコーン系のグルとし
ては付加反応架橋型オルガノシロキサングルが知られ、
またシリコーン系のゴムとしては付加反応架橋型オルガ
ノポリシロキサンゴムや縮合反応架橋型もしくは室温加
硫型オルガノポリシロキサンゴムが知られ、かつ使用さ
れているが、下記に述べるとおり大きな問題をいくつか
有するものであった。Conventional inner coating resins have been silicone glue or rubber. Addition reaction cross-linked organosiloxane glues are known as such silicone-based glues.
Furthermore, addition reaction crosslinking type organopolysiloxane rubber, condensation reaction crosslinking type or room temperature vulcanization type organopolysiloxane rubber are known and used as silicone rubbers, but these have some major problems as described below. It was something.
第２図（イ）に半導体装置を構成するデンディングワイ
ヤーの先端部周辺の拡大断面図を、又、同図（ロ）にイ
ンナーコート層周辺の拡大断面図を示す。FIG. 2(A) shows an enlarged cross-sectional view of the vicinity of the tip of the dendritic wire constituting the semiconductor device, and FIG. 2(B) shows an enlarged cross-sectional view of the vicinity of the inner coat layer.
尚、デンディングワイヤーの先端部は電極への接着手段
によシ各種の形態があるが、本例では通常多用されてい
る第２図（イ）に示すごとき形状のゴールデンディング
ワイヤーを使用した場合について述べる。The tip of the dending wire has various shapes depending on the means of adhesion to the electrode, but in this example, a dending wire with the shape shown in Fig. 2 (a), which is commonly used, is used. Let's talk about.
半導体チップの表面にインナーコート層を設ける際もっ
とも注意を要するのは、過激な温度変化の繰ｂｘしによ
り発生するデンディングワイヤーの切断（ワイヤーオー
プン）を防止するために、硬化後のインナーコート層１
がデンディングワイヤーの先端部４の側湾部Ｑの上方に
まで被覆するようにコーティングすることである。例え
ば第２図（ロ）で示すチップの幅２が７１１１、チップ
の表面からゲンディングワイヤー先端の側湾部Ｐまでの
寸法が４０μｍとすると、チップ表面からワイヤー先端
部で必要なインナーコート層の被覆点Ｑｔでの塗布厚は
約１００μｍを要する。この場合、被覆点Ｑまでの所望
の塗布厚を得るために従来のインナーコート用樹脂を使
用すると、インナーコート層中央部の最大塗布厚Ｘは５
００〜６００μｍにも到達する。一方、最近の半導体チ
ップの大型化、および実装密度の向上、ＩＣカード等の
出現による封止樹脂の薄型化の技術指向によυ、インナ
ーコート層の最大塗布厚Ｘは極力薄くしなければならな
い状況にある。When forming an inner coat layer on the surface of a semiconductor chip, the most important thing to be careful about is to prevent the inner coat layer from curing after curing in order to prevent the wire from breaking (wire open), which occurs due to repeated extreme temperature changes. 1
The coating is applied so as to cover the upper part of the curved part Q of the tip part 4 of the dending wire. For example, if the width 2 of the chip shown in Fig. 2 (B) is 7111 and the dimension from the chip surface to the curved part P of the tip of the wire is 40 μm, the inner coat layer required from the chip surface to the tip of the wire is The coating thickness at the coating point Qt is approximately 100 μm. In this case, if a conventional inner coat resin is used to obtain the desired coating thickness up to the coating point Q, the maximum coating thickness X at the center of the inner coat layer will be 5.
It reaches 00 to 600 μm. On the other hand, due to the recent increase in the size of semiconductor chips, the improvement in packaging density, and the technological trend toward thinner sealing resins due to the emergence of IC cards, etc., the maximum coating thickness X of the inner coat layer must be made as thin as possible. situation.
然るに従来のインナーコート用樹脂では、塗布厚Ｘが厚
すぎるためにインナーコート層最上端部に位置する狭部
封止樹脂領埴Ｙが薄くなシすぎ、従ってＹの機械的強度
が低下し、過激な温度サイクルの繰シ返しにより半導体
封止樹脂にクラックを生ずるという半導体装置として致
命的な問題を生ずるものであった。又、従来のインナー
コート用樹脂はその粘性が不適当であるため、コーティ
ングに際し半導体チップ表面に液滴としてドロラグした
後の拡散性が不良でチップ表面のわずかな溝や凹凸やデ
ンディングワイヤー周辺部への均一な塗工がむずかしい
。However, with conventional inner coat resins, the coating thickness X is too thick and the narrow sealing resin area Y located at the top end of the inner coat layer is too thin, resulting in a decrease in the mechanical strength of Y. The repetition of extreme temperature cycles causes cracks in the semiconductor sealing resin, which is a fatal problem for semiconductor devices. In addition, because the viscosity of conventional inner coating resins is inappropriate, the dispersion of the resin after it lags as droplets on the surface of the semiconductor chip during coating is poor, resulting in slight grooves and irregularities on the chip surface, and areas around the denting wire. Difficult to apply uniformly.
さらに又、従来のインナーコート用樹脂は金ワイヤーか
らなるゼンディングワイヤー表面との親和性が不良のた
めワイヤーオープンを生シやスイ問題をも有するもので
あった。Furthermore, conventional resins for inner coatings have poor affinity with the surface of the gold wire of the gending wire, and thus have the problem of creating wire opens or swiping.
〈発明が解決しようとする問題点〉
本発明は上記の事情に鑑みてなされたものであり、とく
に均一で薄膜のインナーコート層を形成し、しかも過酷
なヒートサイクルの条件下でもワイヤーオープンのない
インナーコート用樹脂組成物を提供するものである。<Problems to be Solved by the Invention> The present invention has been made in view of the above-mentioned circumstances, and is particularly designed to form a uniform and thin inner coat layer, and to prevent wires from opening even under severe heat cycle conditions. The present invention provides a resin composition for inner coating.
く問題点を解決するための手段〉
即ち、本発明の組成物は
１Ａ） 一般式、
Ｍｅ Ｍｅ ＲＭｅ
〔式中、■はビニル基、 Ｍｅはメチル基、ｐｈはフェ
ニル基、Ｒはメチル基またはフェニル基を示す〕で表さ
れるビニル基含有ポリシロキサン１００重量部、
（Ｂ） 一般式、
Ｍｅ Ｍｅ ＭｅＭｅ
〔式中、 Ｍｅはメチル基を示す〕で表される、珪素原
子に結合した水素１子を含有する／ ＩＪシロキサン１
〜３５重量部、
（Ｑ 一般式、
Ｒ５ｔ（ＯＲ２）３
〔式中、Ｒ１は低級アルクニル基、Ｒ２は低級アルキル
基、又は一般式、Ｒ（ＯＣＩ（２ＣＭ２）ｊ（Ｒはメチ
ル基又はエチル基、ｊは１又は２）で示される基〕で表
されるアルケニル基含有シラン化合物、上記（Ａ）及び
（８）の合計量に対して０．０１〜２．０重量部、
ＣＤ） 白金系付加反応触媒
よりなる組成物でありて、（Ａ）のポリシロキサンが０
．０１〜０．２のｚ／（ｋ＋ｚ）値と温度２５℃におけ
る粘度１００〜８００Ｃｐｓを有し、（Ｂ）のポリシミ
キサ／が０．０５〜０．３のｎ／（ｍ＋ｎ）値と温度２
５℃における粘度２〜５００ ｃｐｓを有する事を特徴
とするものである。Means for Solving Problems> That is, the composition of the present invention has the following general formula: 1A) Me Me RMe [wherein ■ is a vinyl group, Me is a methyl group, ph is a phenyl group, and R is a methyl group or 100 parts by weight of a vinyl group-containing polysiloxane represented by the following formula: (B) Me Me MeMe [wherein Me represents a methyl group] 1 hydrogen bonded to a silicon atom; Contains / IJ Siloxane 1
~35 parts by weight, (Q general formula, R5t(OR2)3 [wherein, R1 is a lower alknyl group, R2 is a lower alkyl group, or the general formula, R(OCI(2CM2)j (R is a methyl group or an ethyl group) , j is a group represented by 1 or 2)], 0.01 to 2.0 parts by weight based on the total amount of (A) and (8) above, CD) Platinum-based A composition comprising an addition reaction catalyst, wherein the polysiloxane (A) is 0.
．． The polycimixer of (B) has a z/(k+z) value of 0.01 to 0.2 and a viscosity of 100 to 800 Cps at a temperature of 25°C, and the polycimixer/ of (B) has an n/(m+n) value of 0.05 to 0.3 and a temperature of 25°C.
It is characterized by having a viscosity of 2 to 500 cps at 5°C.
以下、本発明の構成を更に詳しく説明する。成分（Ａ）
のビニル基含有ポリシロキサンは両末端のみに８１原子
に結合し九ビニル基を有する直鎖状のポリシロキサンで
あって、該ポリシロキサンにおける（ＰｈＲ３ＩＯ）単
位（Ｒはメチル基又はフェニル基を示す）のモル数ｔの
、（Ｍｅ ２ Ｓ ｉ Ｏ）単位のモルｆｉＫと前記ｔ
との合計値に対する比率が０．０１−０．２であシ又温
度２５℃における粘度１００〜８００ ｃｐｓを有する
ものでなければならない。この成分（４）の主鎖の部分
を（Ｍｅ ２ Ｓ ｉ Ｏ）単位と（ｐｂａｓｓＯ）単
位との共重合体とする目的は、フェニル基の導入によっ
て、本発明の組成物を使用したインナーコート層の耐熱
性を向上させることにある。従って、（ＰｈＲ８ｔｏ）
単位中のＲはフェニル基であることがよシ好ましい。ま
た、このｔ／Ｃｋ＋１ ”）値は０．０１より小さい範
囲では目的とする耐熱性が得られず、０．２を越える範
囲では耐熱性では問題ないものの成分（Ｂ）の８％原子
に結合した水素原子を含有する。３１’ ＩＪシロキサ
ンとの相溶性に問題が生じ、前記インナーコート層が白
濁するに至る。そして、このｔ／Ｃｋ＋ｔ’）値の好ま
しい範囲は０．０３〜０．１５である。また、温度２５
℃における粘度が１００ ｃｐｓよシ小さい範囲では半
導体チップ表面への拡散が速過ぎる結果、インナーコー
ト層があまシにも薄くなシ過ぎメンディングワイヤー周
辺部を十分に被覆できなかったシ、チップ表面から流れ
落ちてしまうなどの欠点があシ、逆に該粘度が８００
ｃｐｓを越える範囲では半導体チップ表面への拡散性が
不良となるため、目的とする薄膜のインナーコート層が
得られず又メンディングワイヤー周辺部への均一な塗工
も難しくなる。Hereinafter, the configuration of the present invention will be explained in more detail. Ingredient (A)
The vinyl group-containing polysiloxane is a linear polysiloxane having 9 vinyl groups bonded to 81 atoms only at both ends, and the (PhR3IO) unit (R represents a methyl group or a phenyl group) in the polysiloxane. The number of moles t of (Me 2 Si O) units fiK and the t
It must have a ratio of 0.01-0.2 to the total value and a viscosity of 100-800 cps at a temperature of 25°C. The purpose of making the main chain portion of component (4) a copolymer of (Me 2 S i O) units and (pbassO) units is to create an inner coat using the composition of the present invention by introducing a phenyl group. The purpose is to improve the heat resistance of the layer. Therefore, (PhR8to)
More preferably, R in the unit is a phenyl group. In addition, if this t/Ck+1'') value is smaller than 0.01, the desired heat resistance cannot be obtained, and if it exceeds 0.2, there is no problem with heat resistance, but the bond is bonded to 8% atoms of component (B). A problem arises in compatibility with 31' IJ siloxane, resulting in the inner coat layer becoming cloudy.The preferable range of this t/Ck+t') value is 0.03 to 0.15. Also, the temperature 25
When the viscosity at °C is as small as 100 cps, diffusion to the semiconductor chip surface is too fast, resulting in the inner coat layer being too thin to adequately cover the area around the mending wire. There are disadvantages such as the viscosity is 800%.
In a range exceeding cps, the diffusibility to the semiconductor chip surface becomes poor, making it impossible to obtain the desired thin inner coat layer and making it difficult to uniformly coat the surrounding area of the mending wire.
次に、成分（Ｂ）の珪素原子に結合した水素原子を含有
するポリシロキサンは、両末端及び側鎖に８１原子に結
合した水素原子を含有する直鎖状のポリシロキサンであ
って、主剤である成分囚のビニル基含有ポリシロキサン
に対し、そのビニル基に対するＳし１の付加反応即ちい
わゆるヒドロシリル化反応による硬化剤として作用する
ものである。Next, the polysiloxane containing hydrogen atoms bonded to silicon atoms of component (B) is a linear polysiloxane containing hydrogen atoms bonded to 81 atoms at both ends and side chains, and is a linear polysiloxane containing hydrogen atoms bonded to 81 atoms at both ends and side chains. It acts as a curing agent for a vinyl group-containing polysiloxane as a component by an addition reaction of S-1 to the vinyl group, that is, a so-called hydrosilylation reaction.
そしてこのポリシロキサンは一般式（Ｂ） Ｋおける（
Ｍｅ）ＩＳｉＯ）単位のモル数ｎの、（Ｍｅ２８１０）
単位のモル数ｍと前記ｎとの合計値に対する比率が０．
０５〜０．３であシ又温度２５℃における粘度２〜５０
０ｅｐｆｉを有するものでなければならず、その使用量
は成分（８）１００重量部に対して１〜３５重量部であ
る。前記ｎ／（ｍ＋ｎ）値が０．０５より小さい範囲で
は硬化不十分となる可能性が大きく０．３を越える範囲
では過度の硬化反応によシやや柔軟性に欠ける腰になシ
易い。このｎ／（ｍ十ｎ）値が前記範囲の限界を少々外
れた値でおっても、成分（４）及び０）それぞれの粘度
或は囚に対する（Ｂ）の使用割合を変動させる事によっ
て好ましい硬化状態に調整出来るものではあるが、その
好ましい範囲は０．１〜０．２で６る。また温度２５℃
における粘度が２ａｐｓより低い範囲では組成物の初期
粘度を好ましい値に調整しづらいだけでなく該ポリシロ
キサンの分子量が小さいことに基づく硬化状態の不具合
を招くことになる。逆に該粘度が５００ ｃｐｓを越え
る範囲でもｔ次組放物の初期粘度を好ましい値に調整し
づらいという問題点が存在する。該粘度の好ましい範囲
は５〜１５０ ｃｐｓである。そして該ポリシロキサン
の使用量が成分（Ａ） １ｏ ｏ重量部に対して１重量
部より少ない範囲では硬化不十分のインナーコート層に
なシ易く、該使用量が３５重量部を越える範囲では反応
性に富む５Ｌ−Ｈが未反応のまｔｉり易くその結果硬化
後の膜の安定性及び電気的緒特性に悪影響が現れる。This polysiloxane has the general formula (B) K (
(Me2810) with n moles of Me)ISiO) units
The ratio of the number of moles m of units to the total value of n is 0.
05-0.3 and viscosity at 25℃ temperature 2-50
It must have an epfi of 0 epfi, and the amount used is 1 to 35 parts by weight per 100 parts by weight of component (8). If the n/(m+n) value is less than 0.05, there is a high possibility that the curing will be insufficient, and if it exceeds 0.3, the curing reaction tends to be excessive, resulting in a somewhat inflexible stiffness. Even if this n/(m+n) value is a value slightly outside the limits of the above range, it can be made preferable by varying the viscosity of each of components (4) and 0) or the proportion of (B) to be used. Although it can be adjusted to a hardened state, the preferred range is 0.1 to 0.2. Also the temperature is 25℃
If the viscosity of the polysiloxane is lower than 2 aps, it is not only difficult to adjust the initial viscosity of the composition to a preferable value, but also causes problems in the cured state due to the low molecular weight of the polysiloxane. On the other hand, even if the viscosity exceeds 500 cps, there is a problem in that it is difficult to adjust the initial viscosity of the t-order parabolic to a preferable value. The preferred range of viscosity is 5 to 150 cps. If the amount of polysiloxane used is less than 1 part by weight per 100 parts by weight of component (A), the inner coat layer is likely to be insufficiently cured, and if the amount exceeds 35 parts by weight, it may cause a reaction. 5L-H, which is highly reactive, tends to remain unreacted, and as a result, the stability and electrical properties of the cured film are adversely affected.
尚、これら成分（Ａ）及び（Ｂ）のポリシロキサンは一
般的に良く知られた方法で製造することができる。例え
ば、（Ａ）のビニル基含有ポリシロキサンの場合は、末
端停止剤としてのジピニルテトラメチルジシロキサンの
存在下、ヘキサメチルシフｏ）ジシロキサンもしくはオ
クタメチルシクロテトラシロキサンと、ヘキサフェニル
シクロトリシロキサンもしくハトリノチルトリフェニル
シクロシロキサンとを、硫酸、塩酸、活性白土等の酸触
媒、或は水酸化リチウム、水酸化カリウム、水酸化セシ
ウム、水酸化テトラメチルアンモニウム、リチウムシラ
ル−ト、カリウムシラル−ト、リチウムフェノキサイド
等のアルカリ触媒を用いて平衡化させ友後、常法によシ
触媒を除去し、減圧下に加熱することによシ低分子量の
ポリシロキサンを除去して精製する。又（Ｂ）の珪素結
合水素基を有するポリシロキサンの場合は、末端停止剤
としてテトラメチルジシロキサンを用い、フェニル基含
有環状ポリシロキサンに替えてテトラメチルシクロテト
ラシロキサンを用いることによシ、上記（Ａ）の場合と
同様な操作で製造することができる。尚上記それぞれの
場合において、原料の使用割合を調整することによセ、
粘度及びフェニル基或は珪素結合水素基の含有量を所望
の値に調整できることも公知のことである。The polysiloxanes of components (A) and (B) can be produced by generally well-known methods. For example, in the case of vinyl group-containing polysiloxane (A), hexamethylcyclotrisiloxane or octamethylcyclotrisiloxane and hexaphenylcyclotrisiloxane are combined in the presence of dipinyltetramethyldisiloxane as a terminal capping agent. Siloxane or hatrinotyltriphenylcyclosiloxane is treated with an acid catalyst such as sulfuric acid, hydrochloric acid, activated clay, or lithium hydroxide, potassium hydroxide, cesium hydroxide, tetramethylammonium hydroxide, lithium syralate, potassium hydroxide. After equilibration using an alkali catalyst such as syralate or lithium phenoxide, the catalyst is removed by a conventional method, and the low molecular weight polysiloxane is removed by heating under reduced pressure for purification. . In the case of (B), a polysiloxane having a silicon-bonded hydrogen group, the above-mentioned It can be manufactured by the same operation as in case (A). In each of the above cases, by adjusting the proportion of raw materials used,
It is also known that the viscosity and the content of phenyl groups or silicon-bonded hydrogen groups can be adjusted to desired values.
ｆｆ分（Ｃ）ｆｌ一般式Ｒ’５ｉ（ＯＲ２）、 ？表さ
れルシラン化合物であって、Ｒ１は低級アルケニル基、
Ｒ２は低級アルキル基、又は一般式、Ｒ３（ＯＣＨ２Ｃ
Ｈ２） ｊ（Ｒ５はメチル基又はエチル基、ｊＦｉｌ又
は２）で示される基」を示すもので６Ｄ、半導体チップ
への密着性向上の目的をもりて成分（Ａ）と成分（Ｂ）
との合計量に対して０．０１〜２．０重量％を使用する
。Ｒの例としてはビニル基、アリル基、ｌ−グロペニル
基或はイソプロペニル基等が挙げられ、この内特にビニ
ル基が好ましい。又Ｒとしてはメチル基、エチル基、プ
ロピル基、イソブチル基、ブチル基、イソブチル基、あ
るいはメトキシエチレン基、エトキシエチレン基 ２
＋ Ｃ２−メトキシエトキシ）エチレン基、２−（２−
エトキシエトキシ）エチレン基等が例示される。該シラ
ン化合物の使用量が成分（Ａ）と成分（Ｂ）との合計量
に対し０．０１重量％よシ少ない範囲では前記密着性の
向上が十分でなく、２．０重量％を越えて使用しても密
着性が格段に向上するわけではないうえ、反応性に富む
５ｌＯＲ２基が増加して硬化後の膜の安定性或は電気的
緒特性に悪影醤を与える等不利な結果を招くことになる
。該シラン化合物の使用量の好ましい範囲は（Ａ）及び
（Ｂ）の合計量に対して０．０５〜１．０重量％である
。ff minute (C) fl general formula R'5i (OR2), ? is a lucirane compound represented by R1, where R1 is a lower alkenyl group,
R2 is a lower alkyl group, or the general formula, R3(OCH2C
H2) j (R5 is a methyl group or ethyl group, jFil or a group represented by 2)" 6D, component (A) and component (B) for the purpose of improving adhesion to semiconductor chips
and 0.01 to 2.0% by weight based on the total amount. Examples of R include vinyl group, allyl group, l-gropenyl group, and isopropenyl group, among which vinyl group is particularly preferred. Further, R is a methyl group, ethyl group, propyl group, isobutyl group, butyl group, isobutyl group, or methoxyethylene group, ethoxyethylene group 2
+ C2-methoxyethoxy)ethylene group, 2-(2-
Examples include ethoxyethoxy)ethylene group. If the amount of the silane compound used is less than 0.01% by weight relative to the total amount of components (A) and (B), the improvement in adhesion will not be sufficient; if it exceeds 2.0% by weight, Even if it is used, adhesion does not improve significantly, and the highly reactive 5lOR2 groups increase, resulting in disadvantageous effects such as adversely affecting the stability and electrical properties of the film after curing. I will invite you. The preferred range of the amount of the silane compound used is 0.05 to 1.0% by weight based on the total amount of (A) and (B).
成分（Ｄ）の白金系付加反応触媒は、ビニル基と珪素結
合水素との付加反応触媒として有効な公知の白金触媒を
全て包含する者でアシ、塩化白金酸、塩化白金酸とオレ
フィン或はビニル基含有ポリシロキサン等の錯化合物、
白金配位化合物等を代表例として挙げることができる。The platinum-based addition reaction catalyst of component (D) includes all known platinum catalysts that are effective as catalysts for the addition reaction between vinyl groups and silicon-bonded hydrogen; Complex compounds such as group-containing polysiloxanes,
Typical examples include platinum coordination compounds.
そして、該付加反応触媒の使用量は、温度条件との関係
下に硬化速度に影響を与えるだけであり特に限定する必
要はないが、実用的には（Ａ）及び（Ｂ）の合計量に対
して２〜６ ｐｐｍの白金原子を与える量が好ましい。The amount of the addition reaction catalyst used only affects the curing rate in relation to the temperature conditions and does not need to be particularly limited, but in practical terms, the total amount of (A) and (B) An amount that provides 2 to 6 ppm of platinum atoms is preferred.
又この際、付加反応触媒である白金を配位させて。Also, at this time, platinum, which is an addition reaction catalyst, is coordinated.
一時的に触媒能を失活させる能力を有する化合物即ち付
加反応遅延剤として知られる公知の化合物を併用しても
何等差し支えない。尚、本発明の組成物に無機充填剤或
は耐熱安定剤等を添加することも、半導体インナーコー
トとして要求される諸物件に影響を与えない限ＪＩＣお
いて許される。There is no problem in using a compound having the ability to temporarily deactivate the catalyst, ie, a known compound known as an addition reaction retarder. It should be noted that the addition of inorganic fillers, heat-resistant stabilizers, etc. to the composition of the present invention is also permitted by JIC as long as it does not affect the properties required as a semiconductor inner coat.
なお、上記各成分を混合して組成物となす際には全ての
配合成分を一度に混合しても構わ彦いが、各成分を２８
１Ｉ類のグループに分けて予め混合したものを用いる２
液タイプの混合法が実用的であシまた一般的でもある。In addition, when mixing the above components to form a composition, it is possible to mix all the components at once, but each component
Use a pre-mixed mixture divided into 1I groups 2
Liquid type mixing methods are both practical and common.
この際、成分（Ｂ）の珪素結合水素含有ポリシロキサン
には、珪素結合水素の高い反応性のため成分（Ａ）のビ
ニル基含有ポリシロキサン以外の成分は予め混合してお
くことができず、成分（Ｃ）の低級アルケニル基含有シ
ラン化合物、成分（Ｄ）の白金系付加反応触媒、更には
必要に応じて付加反応遅延剤、無機充填剤或は耐熱安定
剤等は成分（Ａ）のビニル基含有ポリシロキサンに予め
混合して使用される。At this time, components other than the vinyl group-containing polysiloxane of component (A) cannot be mixed in advance with the silicon-bonded hydrogen-containing polysiloxane of component (B) due to the high reactivity of silicon-bonded hydrogen. The lower alkenyl group-containing silane compound of component (C), the platinum-based addition reaction catalyst of component (D), and, if necessary, addition reaction retardant, inorganic filler, or heat-resistant stabilizer, etc. are the vinyl component (A). It is used by pre-mixing it with group-containing polysiloxane.
以下、本発明を実施例により説明するが、これらは説明
のためのものに過ぎず本発明を制限するものではない。Hereinafter, the present invention will be explained with reference to Examples, but these are merely for illustration purposes and are not intended to limit the present invention.
以下特に断らない限シ実施例および比較例中で部及び係
とあるのは重量部及び重量部を示し、また粘度は２５℃
におｔ↑る値を示す。Unless otherwise specified, parts and parts in Examples and Comparative Examples refer to parts by weight, and viscosity is 25°C.
Indicates the value of t↑.
実施例１
（Ｐｈ２３１０ ）単位のモル数ｔの（Ｍ・２ＳＩＯ）
単位のモル数にと前記りとの合計値に対する比率が０．
０６であり粘度３６０ ｃｐｓである、両末端にビニル
基を有する直鎖状ポリシロキサンに、０．４％のビニル
トリス（２−メトキシエトキシ）シラン、及び白金原子
に換算して４ ｐｐｍに相当する量のメチルビニル環状
ポリシロキサンの塩化白金酸錯体を添加して調製した混
合液１００部と、 （Ｍ＠Ｈ８ｌ０）単位のモル数ｎの
（Ｍ・２ｓｉｏ）単位のモル数ｍと前記ｎとの合計値に
対する比率が０．０４でアり粘度ｇ ７ ｃｐｓである
、両末端に珪素結合水素を有する直鎖状ポリシロキサン
と前記ビニル基含有ポリシロキサンとをｌＯ：１の割合
で配合した混合液１８部を混合してインナーコート用樹
脂組成物を得た。該組成物の中のビニル基含有ポリシロ
キサンと珪素結合水素含有／ ＩＪシロキサンとの比率
は１００：１６．１．ビニルトリス（２−メトキシエト
キシ）７ランの使用量はビニル基含有ポリシロキサンと
珪素結合水素含有ポリシロキサンの合計量に対して０．
３４チ、ｔた白金触媒の使用量は前記両ポリシロキサン
の合計量に対し白金原子換算３、４ ｐｐｍと計算され
る。以上のようにして調製した組成物を、混合後直ちに
脱泡処理を施した後、ディスペンサーを用いて４．５
Ｘ ７．４ ｍ／ｍ四方の２５６にピッ） ＣＭＯ８Ｗ
ＲＡＳ素子からなる半導体チップ表面に自然落下拡散
させ、１５０℃で３時間加熱硬化しインナーコート層を
形成し念。その結果、第２図←）で示したインナーコー
ト層中央部の最大塗布厚Ｘは２３０μｍであった。なお
、この場合、液滴としてドロップした本発明の樹脂組成
物の拡散性はきわめて良好であり、インナーコート層は
素子表面およびがンデイングワイヤーに均一に密着して
、いた。然るのちエポキシ樹脂組成物を用いてに２図（
ロ）でいうＸ＋Ｙが７００μｍになるよう半導体チップ
を封止した。Example 1 (M・2SIO) of the number of moles t of (Ph2310) units
The ratio of the number of moles of the unit to the total value of the above is 0.
0.6 and a viscosity of 360 cps, a linear polysiloxane having vinyl groups at both ends, 0.4% vinyltris(2-methoxyethoxy)silane, and an amount equivalent to 4 ppm in terms of platinum atoms. 100 parts of a mixed solution prepared by adding a chloroplatinic acid complex of methylvinyl cyclic polysiloxane, the number of moles n of (M@H8l0) units, the number m of moles of (M・2sio) units, and the sum of the above n. A mixed liquid 18 in which a linear polysiloxane having silicon-bonded hydrogen at both ends and the above-mentioned vinyl group-containing polysiloxane are blended in a ratio of 1O:1, and the ratio to the value is 0.04 and the viscosity is g 7 cps. These parts were mixed to obtain a resin composition for inner coating. The ratio of vinyl group-containing polysiloxane to silicon-bonded hydrogen-containing/IJ siloxane in the composition is 100:16.1. The amount of vinyltris(2-methoxyethoxy) 7ran used is 0.000% based on the total amount of vinyl group-containing polysiloxane and silicon-bonded hydrogen-containing polysiloxane.
The amount of platinum catalyst used is calculated to be 3.4 ppm in terms of platinum atoms based on the total amount of both polysiloxanes. Immediately after mixing, the composition prepared as described above was subjected to defoaming treatment, and then 4.5
X 7.4 m/m square 256) CMO8W
It was allowed to naturally fall and diffuse onto the surface of a semiconductor chip consisting of a RAS element, and then heated and cured at 150°C for 3 hours to form an inner coat layer. As a result, the maximum coating thickness X at the center of the inner coat layer shown in FIG. 2 ←) was 230 μm. In this case, the resin composition of the present invention dropped as droplets had extremely good diffusibility, and the inner coat layer was uniformly adhered to the element surface and the bonding wire. Afterwards, using the epoxy resin composition, the
The semiconductor chip was sealed so that X+Y in b) was 700 μm.
本発明のインナーコート用樹脂組成物で被覆後エポキシ
樹脂封止された半導体チップをＭＩＩ、−８ＴＤ−８８
３Ｂ （日本電子機械工業会線）の試験番号１０１０．
２に規定された試験条件Ｃにより２００サイクルの温度
サイクル試験に供したところ、ゴンディ／グワイヤーの
断線もなく、又、インナーコート層最上部に位置する狭
部封止樹脂領域Ｙの厚さが４７０μｍとｂう十分な厚さ
を保持して込るのでこの部分での封止樹脂のクラック等
破損を生ずることがなかりた。MII, -8TD-88, a semiconductor chip coated with the resin composition for inner coat of the present invention and then sealed with epoxy resin.
3B (Japan Electronics Industry Association Line) test number 1010.
When subjected to a temperature cycle test of 200 cycles under test conditions C specified in 2, there was no disconnection of the gondii/gwire, and the thickness of the narrow sealing resin region Y located at the top of the inner coat layer was 470 μm. Since a sufficient thickness was maintained, no damage such as cracking of the sealing resin occurred in this part.
さらに本発明により得られた半導体装置の耐湿性をみる
ために１２１℃２ ａｔｍ、の条件で５００時間のプレ
ッシャークツカー試験をおこなったところ半導体のノク
ツド及び回路部の腐食はみられず実用上きわめて高い信
頼性を有することが確認された。Furthermore, in order to check the moisture resistance of the semiconductor device obtained according to the present invention, a pressure cooker test was conducted for 500 hours at 121°C and 2 atm, and no corrosion was observed in the semiconductor nooks and circuit parts, which is extremely suitable for practical use. It was confirmed that it has high reliability.
実施例２
（ｐｈ２ｓｔｏ）単位のモル数りの（Ｍｅ２８１０）単
位のモル数にと前記ｔとの合計値に対する比率が０．０
６であり粘度３６０ ｃｐｓである、両末端にビニル基
を有する直鎖状ポリシロキサンに、０．４％のビニルト
リス（２−メトキシエトキシ）シラン、及び白金原子に
換算して４ｐｐｍに相当する童のメチルビニル環状ポリ
シロキサンの塩化白金酸錯体を添加して調製し九混合液
１００部と、（Ｍ＠Ｈ８１Ｏ）単位のモル数ｎの（Ｍ６
２ＳｔＯ）単位のモル数ｍと前記ｎとの合計値に対する
比率が０．０４であり粘度８８ｃｐｓである、両末端に
珪素結合水素を有する直鎖状ポリシロキサンと前記ビニ
ル基含有ポリシロキサンとを１０：１．５の割合で配合
した混合液１８部を混合してインナーコート用樹脂組成
物を得た。Example 2 The ratio of the number of moles of (Me2810) units to the number of moles of (ph2sto) units to the total value of t is 0.0
6 and a viscosity of 360 cps, 0.4% vinyltris(2-methoxyethoxy)silane and 4 ppm of platinum atoms were added to a linear polysiloxane having vinyl groups at both ends. 100 parts of a mixed solution prepared by adding a chloroplatinic acid complex of methylvinyl cyclic polysiloxane and (M6
A linear polysiloxane having silicon-bonded hydrogen at both ends and the vinyl group-containing polysiloxane having a ratio of 0.04 to the total value of the number of moles m of 2StO) units and the above n and a viscosity of 88 cps : 18 parts of a mixed solution blended at a ratio of 1.5 were mixed to obtain a resin composition for inner coat.
該樹脂組成物中のビニル基含有／ ＋３シロキサンと珪
素結合水素含有／ ＩＪシロキサンとの比率は１００：
１５．３、ビニルトリス（２−メトキシエトキシ）シラ
ンの使用量はビニル基含有ポリシロキサンと珪素結合水
素含有ポリシロキサンの合計量に対して０．３４１また
白金触媒の使用量は前記両ポリシロキサンの合計量に対
し白金原子換算３．４ ｐｐｍと計算される。以上のよ
うにしてｍ製した組成物を、混合後直ちに脱泡処理を施
した後、ディスペンサーを用いて４．５ Ｘ ７．４
ｍ／ｍ四方の２５６にピッ） ＣＭＯ８型ＲＡＭ素子か
らなる半導体チップ表面に自然落下拡散させ、１５０℃
で３時間加熱硬化し最大塗布厚Ｘが２３０μｍのインナ
ーコート層を形成した。この場合液滴としてドロップし
た本発明の樹脂組成物の拡散性はきわめて良好であり、
インナーコート層は素子表面およびボンディングワイヤ
ーに均一に密着していた。然るのち工Ｉキシ樹脂組成物
を用いて第２図仲）でいうＸ＋Ｙが７００μｍになるよ
う半導体チップを封止した。The ratio of vinyl group-containing/+3 siloxane to silicon-bonded hydrogen-containing/IJ siloxane in the resin composition is 100:
15.3. The amount of vinyltris(2-methoxyethoxy)silane used is 0.341 with respect to the total amount of vinyl group-containing polysiloxane and silicon-bonded hydrogen-containing polysiloxane, and the amount of platinum catalyst used is the sum of both polysiloxanes. Calculated to be 3.4 ppm in terms of platinum atoms. Immediately after mixing, the composition prepared in the above manner was defoamed, and then 4.5 x 7.4 m was prepared using a dispenser.
256 m/m square) Gently fall and diffuse on the surface of a semiconductor chip consisting of a CMO8 type RAM element, and heat at 150°C.
The inner coat layer was cured by heating for 3 hours to form an inner coat layer having a maximum coating thickness X of 230 μm. In this case, the dispersibility of the resin composition of the present invention dropped as droplets is extremely good,
The inner coat layer was uniformly adhered to the element surface and the bonding wire. Thereafter, the semiconductor chip was sealed using a polyurethane resin composition such that X+Y was 700 μm as shown in Figure 2 (middle).
本発明のインナーコート用樹脂組成物で被覆後エポキシ
樹脂封止された半導体チップについて実施例１と同様和
して評価試験をおこなったところ封止樹脂の破損等生ず
ることなく実用上きわめて高い信頼性を有するものであ
った。A semiconductor chip coated with the resin composition for inner coating of the present invention and then sealed with epoxy resin was subjected to an evaluation test in the same manner as in Example 1, and the reliability was extremely high in practical use, with no damage to the sealing resin. It had a
実施例３
（ｐｈ２ｓｌｏ）単位のモル数ｔの（Ｍ・２ＳＩＯ）単
位のモル数にと前記ｔとの合計値に対する比率が０．０
６であシ粘度４１０ ｃｐｓである、両末端にビニル基
を有する直鎖状ポリシロキサンに、０．４％のビニルト
リス（２−メト牛シェド中シ）シラン、及ヒ白金原子に
換算して４ ｐｐｍに相当する量のメチルビニル環状４
ｙシロキサンの塩化白金酸錯体を添加して調製した混合
液１００部と、（ＭｅＨ８１Ｏ）単位のモル数ｎの（Ｍ
ｅ ｚ ８．１０）単位のモル数ｍと前記ｎとの合計値
に対する比率が０．０４であシ粘度９０ ａｐｔである
、両末端に珪素結合水素を有する直鎖状ポリシロキサン
と前記ピ、ニル基含有ポリシロ中サンとｉｌＯ：１．２
の割合で配合した混合液１８部を混合してインナーコー
ト用樹脂組成物を得た。該樹脂組成物中のビニル基含有
／ ＩＪシロ千サンと珪素結合水素含有ポリシロ中サン
との比率は１００：１５．８．ビニルトリス（２−メト
午ジェトキシ）シランの使用量はビニル基含有ポリシロ
キサンと珪素結合水素含有ポリシロ：？テンの合計量に
対して０．３４％、また白金触媒の使用量は前記両ポリ
シロキサンの合計量に対し白金原子換算３．４ ｐｐｍ
と計算される。以上のようにして調製した組成物を、混
合後直ちに脱泡処理を施した後、ディスペアｆ−を用い
て４．５ Ｘ ７．４ ｎｔｍ四方の２５６にビットＣ
ＭＯ８型ＲＡＭ素子からなる半導体テップ表面に自然落
下拡散させ、１５０℃で３時間加熱硬化することによシ
最大塗布厚Ｘが２６０μｍのインナ゛ −コート層を
得た。この場合液滴としてドロ、プした本発明の樹脂組
成物の拡散性はきわめて良好であシ、インナーコート層
は素子表面およびＩンディングワイヤーに均一に密着し
ていた。然るのちエポキシ樹脂組成物を用いて第２図（
ロ）でいうＸ＋Ｙが７００μｍになるよう半導体テップ
を封止した。Example 3 The ratio of the number of moles t of the (ph2slo) unit to the total value of the number of moles of the (M・2SIO) unit and the above t is 0.0
A linear polysiloxane having a vinyl group at both ends and having a viscosity of 410 cps was added with 0.4% vinyl tris(2-metallic acid) silane and 4% platinum atoms. An amount corresponding to ppm of methylvinyl cyclic 4
100 parts of a mixed solution prepared by adding a chloroplatinic acid complex of siloxane and (M
e z 8.10) A linear polysiloxane having silicon-bonded hydrogen at both ends, the ratio of the molar number m of units to the total value of n being 0.04 and having a viscosity of 90 apt; Nyl group-containing polysiloxane and ilO: 1.2
A resin composition for an inner coat was obtained by mixing 18 parts of a mixed solution blended at a ratio of . The ratio of the vinyl group-containing/IJ Shirosan and the silicon-bonded hydrogen-containing polysilosan in the resin composition was 100:15.8. What is the amount of vinyltris(2-methoxy)silane used for vinyl group-containing polysiloxane and silicon-bonded hydrogen-containing polysiloxane? 0.34% based on the total amount of ten, and the amount of platinum catalyst used is 3.4 ppm in terms of platinum atoms based on the total amount of both polysiloxanes.
It is calculated as follows. Immediately after mixing, the composition prepared as described above was subjected to defoaming treatment, and then bit C was applied to 4.5 x 7.4 ntm square 256 using Despair f-.
An inner coat layer having a maximum coating thickness X of 260 .mu.m was obtained by gravity-diffusion on the surface of a semiconductor chip consisting of an MO8 type RAM element and heating and curing at 150.degree. C. for 3 hours. In this case, the dispersibility of the resin composition of the present invention, which was dripped as droplets, was extremely good, and the inner coat layer was evenly adhered to the element surface and the wiring wire. After that, the epoxy resin composition was used to produce the image shown in Figure 2 (
The semiconductor tip was sealed so that X+Y in b) was 700 μm.
本発明のインナーコート用樹脂組成物で被覆後エポキシ
樹脂封止された半導体チップについて実施例１と同様に
して評価試験をおこなったところ封止樹脂の破損等生ず
ることなく実用上きわめて高い信頼性を有するものであ
った。An evaluation test was conducted in the same manner as in Example 1 on a semiconductor chip coated with the inner coat resin composition of the present invention and then sealed with an epoxy resin. It was something that I had.
比較例
両末端にビニル基を含有する粘度２２００ ｃｐｓの市
販の直鎖状ポリシロキサンと両末端に珪素結合水素を有
する粘度６６０ ｃｐｓの直鎖状ポリシロキサンとが１
０二１となるよう配合され、かつビニルトリス（２−メ
トキシエト中シ）シランの使用量がビニル基含有−リシ
ロキサンと珪素結合水素含有ポリシロキサンの合計量に
対して０．３４％、また白金触媒の使用量が前記両Ｉリ
シロ千サンの合計量に対し白金原子換算３．４ ｐｐｍ
になるよう調製された２ ０００ ｃｐｓの粘度を有す
る比較用の半導体インナーコート用樹脂組成物を使用し
て実施例１の要領にて半導体チップ上にインナーコート
層を形成した。Comparative Example A commercially available linear polysiloxane with a viscosity of 2,200 cps containing vinyl groups at both ends and a linear polysiloxane with a viscosity of 660 cps having silicon-bonded hydrogens at both ends were used.
021, and the amount of vinyl tris(2-methoxyethoxy)silane used is 0.34% based on the total amount of vinyl group-containing lysiloxane and silicon-bonded hydrogen-containing polysiloxane, and platinum catalyst. The amount used is 3.4 ppm in terms of platinum atoms based on the total amount of both I reshirosensan.
An inner coat layer was formed on a semiconductor chip in the same manner as in Example 1 using a comparative resin composition for semiconductor inner coat having a viscosity of 2,000 cps.
得られたインナーコート層の最大塗布厚Ｘは６００μｍ
であった。然るのち工Ｉ″Ｐシ樹脂組成物を用いて第２
図（に）でいうＸ＋Ｙが７００μｍになるよう半導体チ
ップを封止した。The maximum coating thickness X of the obtained inner coat layer is 600 μm
Met. After that, a second process was performed using the resin composition.
The semiconductor chip was sealed so that X+Y in the figure was 700 μm.
上記のごとき比較用のインナーコート用樹脂組成物で被
覆後エポキシ樹脂封止された半導体装置プについて実施
例１の要領にて温度サイクル試験をおこなったところイ
ンナーコート層最上部に位置する狭部封止樹脂領域Ｙの
部分でクラックが発生し、信頼性を著しく欠くものであ
った。A temperature cycle test was conducted in the same manner as in Example 1 on a semiconductor device coated with the comparative inner coat resin composition as described above and then sealed with epoxy resin. Cracks occurred in the resin stopper region Y, resulting in a significant lack of reliability.
〈発明の効果〉
本発明は上記の構成からなるので半導体チップ表面のイ
ンナーコート層の厚さを大幅に薄くすることが可能とな
シ、半導体チップの大型化、もしくはノヤッケージの薄
型化に十分適合しうるものである。<Effects of the Invention> Since the present invention has the above structure, it is possible to significantly reduce the thickness of the inner coat layer on the surface of the semiconductor chip, and it is fully suitable for increasing the size of semiconductor chips or reducing the thickness of the package. It is possible.
第１図は本発明の半導体インナーコート用樹脂組成物が
適用される半導体装置の一例を示す断面図、第２図（イ
）はボンディングワイヤー先端部周辺の拡大断面図、第
２図（ｏ）はインナーコート層周辺の拡大断面図を示す
。
１・・・インナーコート層、２・・・半導体チップ、３
・・・がンディングワイヤー、４・・・先端部、５・・
・電極、６・・・グイボンディング層、７ ｋ Ｆ ７
ｂ ｐ ７ ｅ・・・リードフレーム、８・・・封止
樹脂、Ｐ・・・側湾部、Ｑ・・・被覆点、Ｘ・・・最大
塗布厚、Ｙ・・・狭部封止樹脂領域、２・・・半導体テ
ップの幅。FIG. 1 is a sectional view showing an example of a semiconductor device to which the resin composition for semiconductor inner coat of the present invention is applied, FIG. 2(a) is an enlarged sectional view of the vicinity of the bonding wire tip, and FIG. 2(o) shows an enlarged cross-sectional view around the inner coat layer. 1... Inner coat layer, 2... Semiconductor chip, 3
...Ganding wire, 4...Tip, 5...
・Electrode, 6... Gui bonding layer, 7 kF 7
b p 7 e... Lead frame, 8... Sealing resin, P... Side curved part, Q... Covering point, X... Maximum coating thickness, Y... Narrow part sealing resin Area, 2... Width of semiconductor tip.
Claims (1)
ル基、Ｒはメチル基またはフェニル基を示す〕で表され
るビニル基含有ポリシロキサン１００重量部、 （Ｂ）一般式、 ▲数式、化学式、表等があります▼ 〔式中、Ｍｅはメチル基を示す〕で表される、珪素原子
に結合した水素原子を含有するポリシロキサン１〜３５
重量部、 （Ｃ）一般式 Ｒ＾１Ｓｉ（ＯＲ＾２）＿３ 〔式中、Ｒ＾１は低級アルケニル基、Ｒ＾２は低級アル
キル基、又は一般式、Ｒ＾３（ＯＣＨ＿２ＣＨ＿２）＿
ｊ（Ｒ＾３はメチル基又はエチル基、ｊは１又は２）で
示される基〕で表されるアルケニル基含有シラン化合物
、上記（Ａ）及び（Ｂ）の合計量に対して０．０１〜２
．０重量％、 （Ｄ）白金系付加反応触媒 よりなる組成物であって、（Ａ）のポリシロキサンが０
．０１〜０．２のｌ／（ｋ＋ｌ）値と温度２５℃におけ
る粘度１００〜８００ｃｐｓを有し、（Ｂ）のポリシロ
キサンが０．０５〜０．３のｎ／（ｍ＋ｎ）値と温度２
５℃における粘度２〜５００ｃｐｓを有する事を特徴と
する半導体インナーコート用樹脂組成物。 ２（Ａ）のポリシロキサンの温度２５℃における粘度が
２００〜５００ｃｐｓであり、（Ｂ）のポリシロキサン
の温度２５℃における粘度が５〜１５０ｃｐｓである特
許請求の範囲第１項記載の組成物。 ３（Ａ）におけるｌ／（ｋ＋ｌ）値が０．０３〜０．１
５である特許請求の範囲第１項乃至第２項に記載の組成
物。 ４（Ｂ）におけるｎ／（ｍ＋ｎ）値が０．１〜０．２で
ある特許請求の範囲第１項乃至第３項に記載の組成物。 ５（Ａ）のポリシロキサン１００重量部に対する（Ｂ）
のポリシロキサンの使用量が５〜２５重量部である特許
請求の範囲第１項乃至第４項に記載の組成物。 ６（Ａ）におけるＲがフェニル基である特許請求の範囲
第１項乃至第５項に記載の組成物。 ７（Ｃ）におけるＲ＾１がビニル基である特許請求の範
囲第１項乃至第６項に記載の組成物。 ８（Ｃ）のシラン化合物の使用量が（Ａ）及び（Ｂ）の
合計量に対して０．０５〜１．０重量％である特許請求
の範囲第１項乃至第７項に記載の組成物。 ９（Ａ）一般式、 ▲数式、化学式、表等があります▼ 〔式中、Ｖはビニル基、Ｍｅはメチル基、Ｐｈはフェニ
ル基〕で表されるビニル基含有ポリシロキサン１００重
量部、 （Ｂ）一般式 ▲数式、化学式、表等があります▼ 〔式中、Ｍｅはメチル基を示す〕で表される、珪素原子
に結合した水素原子を含有するポリシロキサン５〜２５
重量部、 （Ｃ）一般式、 ＶＳｉ（ＯＲ＾２）＿３ 〔式中、Ｖはビニル基、Ｒ＾２は低級アルキル基、又は
一般式、Ｒ＾３（ＯＣＨ＿２ＣＨ＿２）＿ｊ（Ｒ＾３は
メチル基又はエチル基、ｊは１又は２）で示される基〕
で表されるビニル基含有シラン化合物、上記（Ａ）及び
（Ｂ）の合計量に対して０．０５〜１．０重量％、 （Ｄ）白金系付加反応触媒 よりなる組成物であって、（Ａ）のポリシロキサンが０
．０３〜０．１５のｌ／（ｋ＋ｌ）値と温度２５℃にお
ける粘度２００〜５００ｃｐｓを有し、（Ｂ）のポリシ
ロキサンが０．１〜０．２のｎ／（ｍ＋ｎ）値と温度２
５℃における粘度５〜１５０ｃｐｓを有する事を特徴と
する半導体インナーコート用樹脂組成物。 １０ 白金系付加反応触媒の使用量が（Ａ）及び（Ｂ）
の合計量に対して２〜６ｐｐｍの白金原子を与える量で
ある特許請求の範囲第１項乃至第９項に記載の組成物。[Claims] 1 (A) General formula, ▲ Numerical formula, chemical formula, table, etc. ▼ [In the formula, V is a vinyl group, Me is a methyl group, Ph is a phenyl group, and R is a methyl group or a phenyl group. 100 parts by weight of vinyl group-containing polysiloxane represented by (B) general formula, ▲Mathematical formula, chemical formula, table, etc.▼ [In the formula, Me represents a methyl group], silicon atom Polysiloxanes 1-35 containing bonded hydrogen atoms
Parts by weight, (C) General formula R^1Si(OR^2)_3 [In the formula, R^1 is a lower alkenyl group, R^2 is a lower alkyl group, or general formula, R^3(OCH_2CH_2)_
0.01 based on the total amount of (A) and (B) above, ~2
．． 0% by weight, (D) a composition consisting of a platinum-based addition reaction catalyst, in which the polysiloxane of (A) is 0% by weight;
．． The polysiloxane of (B) has an l/(k+l) value of 0.01 to 0.2 and a viscosity of 100 to 800 cps at a temperature of 25°C, and the polysiloxane of (B) has an n/(m+n) value of 0.05 to 0.3 and a temperature of 25°C.
A resin composition for a semiconductor inner coat, having a viscosity of 2 to 500 cps at 5°C. 2. The composition according to claim 1, wherein the polysiloxane (A) has a viscosity of 200 to 500 cps at a temperature of 25°C, and the polysiloxane (B) has a viscosity of 5 to 150 cps at a temperature of 25°C. l/(k+l) value in 3(A) is 0.03 to 0.1
5. The composition according to claim 1 or 2, which is 4. The composition according to claim 1, wherein the n/(m+n) value in 4(B) is 0.1 to 0.2. (B) based on 100 parts by weight of polysiloxane 5(A)
5. The composition according to claim 1, wherein the amount of polysiloxane used is 5 to 25 parts by weight. 6. The composition according to claims 1 to 5, wherein R in 6(A) is a phenyl group. 7. The composition according to claims 1 to 6, wherein R^1 in 7(C) is a vinyl group. 8. The composition according to claims 1 to 7, wherein the amount of the silane compound used in (C) is 0.05 to 1.0% by weight based on the total amount of (A) and (B). thing. 9 (A) General formula, ▲Mathematical formulas, chemical formulas, tables, etc.▼ 100 parts by weight of vinyl group-containing polysiloxane represented by [In the formula, V is a vinyl group, Me is a methyl group, and Ph is a phenyl group], ( B) General formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ Polysiloxane 5 to 25 containing a hydrogen atom bonded to a silicon atom, represented by [In the formula, Me represents a methyl group]
Parts by weight, (C) General formula, VSi(OR^2)_3 [wherein, V is a vinyl group, R^2 is a lower alkyl group, or general formula, R^3(OCH_2CH_2)_j (R^3 is methyl group or ethyl group, j is a group represented by 1 or 2)]
A composition comprising a vinyl group-containing silane compound represented by, 0.05 to 1.0% by weight based on the total amount of (A) and (B), and (D) a platinum-based addition reaction catalyst, (A) polysiloxane is 0
．． The polysiloxane of (B) has an l/(k+l) value of 0.3 to 0.15 and a viscosity of 200 to 500 cps at a temperature of 25°C, and the polysiloxane of (B) has an n/(m+n) value of 0.1 to 0.2 and a temperature of 25°C.
A resin composition for a semiconductor inner coat, characterized in that it has a viscosity of 5 to 150 cps at 5°C. 10 The amount of platinum-based addition reaction catalyst used is (A) and (B)
10. The composition according to claim 1, wherein the amount provides 2 to 6 ppm of platinum atoms based on the total amount of .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61040379A JPS62199661A (en) | 1986-02-27 | 1986-02-27 | Resin composition for inner coating of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61040379A JPS62199661A (en) | 1986-02-27 | 1986-02-27 | Resin composition for inner coating of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62199661A true JPS62199661A (en) | 1987-09-03 |
| JPH0588752B2 JPH0588752B2 (en) | 1993-12-24 |
Family
ID=12579017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61040379A Granted JPS62199661A (en) | 1986-02-27 | 1986-02-27 | Resin composition for inner coating of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62199661A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04370151A (en) * | 1991-06-18 | 1992-12-22 | Shin Etsu Chem Co Ltd | Silicone composition for electronic part impregnation and cured product therefrom |
| JP2011513579A (en) * | 2008-03-12 | 2011-04-28 | ダウ・コーニング・コーポレイション | Silicone polymer dispersion and method for forming the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5239751A (en) * | 1975-09-26 | 1977-03-28 | Shin Etsu Chem Co Ltd | Curable organopolysiloxane compositions |
| JPS5434362A (en) * | 1977-08-24 | 1979-03-13 | Shin Etsu Chem Co Ltd | Curable organopolysiloxane composition |
| JPS59122558A (en) * | 1982-12-29 | 1984-07-16 | Toray Silicone Co Ltd | Organopolysiloxane composition for coating of semiconductor element |
-
1986
- 1986-02-27 JP JP61040379A patent/JPS62199661A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5239751A (en) * | 1975-09-26 | 1977-03-28 | Shin Etsu Chem Co Ltd | Curable organopolysiloxane compositions |
| JPS5434362A (en) * | 1977-08-24 | 1979-03-13 | Shin Etsu Chem Co Ltd | Curable organopolysiloxane composition |
| JPS59122558A (en) * | 1982-12-29 | 1984-07-16 | Toray Silicone Co Ltd | Organopolysiloxane composition for coating of semiconductor element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04370151A (en) * | 1991-06-18 | 1992-12-22 | Shin Etsu Chem Co Ltd | Silicone composition for electronic part impregnation and cured product therefrom |
| JP2011513579A (en) * | 2008-03-12 | 2011-04-28 | ダウ・コーニング・コーポレイション | Silicone polymer dispersion and method for forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588752B2 (en) | 1993-12-24 |
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