JPS62198035A - Static focusing/static deflecting type image pickup tube - Google Patents
Static focusing/static deflecting type image pickup tubeInfo
- Publication number
- JPS62198035A JPS62198035A JP3995886A JP3995886A JPS62198035A JP S62198035 A JPS62198035 A JP S62198035A JP 3995886 A JP3995886 A JP 3995886A JP 3995886 A JP3995886 A JP 3995886A JP S62198035 A JPS62198035 A JP S62198035A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrodes
- focusing
- static
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003068 static effect Effects 0.000 title 2
- 238000010894 electron beam technology Methods 0.000 claims abstract description 17
- 238000003384 imaging method Methods 0.000 claims description 2
- 230000004075 alteration Effects 0.000 abstract description 17
- 239000011521 glass Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 241000272517 Anseriformes Species 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/465—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement for simultaneous focalisation and deflection of ray or beam
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、静電集束・静電偏向型の撮像管に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an electrostatic focusing/electrostatic deflection type image pickup tube.
本発明は、静電集束・静電偏向型の撮像管において、電
子ビームの発散角抑制用の補助電極を設けることによシ
、収差を低減するようにしたものである。The present invention is an electrostatic focusing/electrostatic deflection type imaging tube in which aberrations are reduced by providing an auxiliary electrode for suppressing the divergence angle of an electron beam.
第５図は、静電集束Ｏ静電偏向型（Ｓ−Ｓ型）の撮像管
の構成を示している。同図において、Ｋ。FIG. 5 shows the configuration of an electrostatic focusing O electrostatic deflection type (S-S type) image pickup tube. In the same figure, K.
Ｇ１及びＧ２は夫々電子銃を構成するカンード、第１グ
リツド電極及び第２グリツド！極であり、ＬＡはターグ
ットに供給される電子ビームＢｍの発散角を制限するビ
ーム制限開孔である。G1 and G2 are a canard, a first grid electrode, and a second grid, respectively, which constitute an electron gun. LA is a beam-limiting aperture that limits the divergence angle of the electron beam Bm supplied to the target.
また、Ｇ３ ＊ Ｇ４及びＧ５は、夫々第３．第４及び
第５グリツド電極である。これらの電極０３〜Ｇ５は、
ガラスパルプ（図示せず）の内面に、例えばクロム等の
金属が蒸着あるいはメッキされた後、例えばレーザビー
ムにより所定パターンにカッティングされて形成される
。電極０３〜Ｇ５により電子ビームＢｍの集束のための
集束電極系が構成されると共に、電極Ｇ４は電子ビーム
Ｂｍの偏向のだめの電極を兼ねている。また、Ｇ６はメ
ツシュ状電極、ＴＡはターグットである。Moreover, G3*G4 and G5 are respectively 3rd. These are the fourth and fifth grid electrodes. These electrodes 03 to G5 are
After a metal such as chromium is vapor-deposited or plated on the inner surface of glass pulp (not shown), the glass pulp is cut into a predetermined pattern using, for example, a laser beam. The electrodes 03 to G5 constitute a focusing electrode system for focusing the electron beam Bm, and the electrode G4 also serves as an electrode for deflecting the electron beam Bm. Further, G6 is a mesh-like electrode, and TA is a targut.
この撮像管の電極０３〜Ｇ５は、例えば第６図にその展
開図を示すようなノぞターンとされている。The electrodes 03 to G5 of this image pickup tube are formed into a circular shape, for example, as shown in a developed view in FIG.
特に電極Ｇ４は、一様な偏向電界を得るために、絶縁さ
れて入シ組んでいる４つの電極部Ｈ＋ Ｈｖ＋ ＩＨ−
及びＶ−が円周方向に交互に配された、いわゆるアロー
ノぞターンとされる。また、ＴＨ＋ ｔＴｖ＋ 。In particular, the electrode G4 has four insulated and intricately arranged electrode parts H+ Hv+ IH- in order to obtain a uniform deflection electric field.
and V- are arranged alternately in the circumferential direction, making this a so-called Aronozo turn. Also, TH+ tTv+.
ＴＨ−及び’ｒｖ−は夫々電極部Ｈ＋、Ｖ＋、Ｈ−及び
■−からのリードであシ、電極Ｇ３の領域に形成される
。TH- and 'rv- are leads from the electrode portions H+, V+, H- and -, respectively, and are formed in the region of the electrode G3.
電極部Ｈ＋ 、 Ｈ−は水平偏向用の電極部であり、電
極部Ｖ＋、Ｖ−は垂直偏向用の電極部である。図示せず
も、電極部Ｈ十及びＨ−には夫々リードＴＨ十及びＴＨ
−を介して所定電圧を中心に対称的に変化する水平周期
ののこぎシ波電圧が印加され、一方、電極部Ｖ十及びＶ
−には夫々リードＴＶ十及びＴＶ−を介して所定電圧を
中心に対称的に変化する垂直周期ののこぎり波電圧が印
加され、水平及び垂直偏向走査がなされる。Electrode parts H+ and H- are electrode parts for horizontal deflection, and electrode parts V+ and V- are electrode parts for vertical deflection. Although not shown, the electrode parts H0 and H- have leads TH0 and TH, respectively.
A horizontally periodic sawtooth voltage that changes symmetrically around a predetermined voltage is applied through the electrode parts V0 and V
A sawtooth voltage with a vertical period that changes symmetrically around a predetermined voltage is applied through leads TV0 and TV-, respectively, to perform horizontal and vertical deflection scanning.
尚、図面の簡単化のため、この第６図においては金属の
被着されていな℃・部分を黒線で示している。In order to simplify the drawing, in FIG. 6, the parts to which metal is not deposited are indicated by black lines.
ところで、第５図に示す撮像管においては、電極０３〜
Ｇ５の集束電極系で形成される静電レンズによって電子
ビームＢｍの集束が行われるので、一般に収差が大きい
ことが知られている。By the way, in the image pickup tube shown in FIG.
Since the electron beam Bm is focused by the electrostatic lens formed by the focusing electrode system of G5, it is generally known that aberrations are large.
従来、収差を低減するために、物点を小さくしたシ、電
極形状を制限したシ、高圧化したりと種種の方法が提案
されているが、結局のところは、電子銃からでる電子ビ
ームＢｍの発散角を抑制しないと収差を低減することは
できない。In the past, various methods have been proposed to reduce aberrations, such as making the object point smaller, restricting the electrode shape, and increasing the pressure, but ultimately the electron beam Bm emitted from the electron gun Aberrations cannot be reduced unless the divergence angle is suppressed.
高圧化により電子ビームＢｍの発散角は多少抑えられる
が、急激な軸上電位分布の変化は却って球面収差を増す
不都合がある。Although the divergence angle of the electron beam Bm can be suppressed to some extent by increasing the voltage, a sudden change in the axial potential distribution has the disadvantage of increasing spherical aberration.
本発明は斯る点に鑑み、収差の低減を図るものである。In view of this point, the present invention aims to reduce aberrations.
本発明は上述問題点を解決するため、電子ビームＢｍの
発散角抑制用の補助電極０３′が偏向１！極より電子銃
側に設けられるものである。例えば、電極Ｇ３〜Ｇ５に
よシミ子ビームＢｍの集束のための集束電極系が構成さ
れると共に、電極Ｇ４は電子ビームＢｍの偏向のための
電極を兼ねているユニポテンシャル型のもの忙よれば、
電極Ｇ４より電子銃（Ｋ。In order to solve the above-mentioned problems, the present invention has an auxiliary electrode 03' for suppressing the divergence angle of the electron beam Bm that deflects 1! It is installed closer to the electron gun than the pole. For example, if the electrodes G3 to G5 constitute a focusing electrode system for focusing the beam Bm, and the electrode G4 is a unipotential type electrode that also serves as an electrode for deflecting the electron beam Bm, ,
Electron gun (K.
Ｇｌ ＊ ０２ ）側に円筒状又は円板状の補助電極Ｇ
３が設けられる。Cylindrical or disc-shaped auxiliary electrode G on the Gl*02) side
3 is provided.
電極Ｇｌが設けられることによシ、プリ集束レンズが形
成され、これによシミ子ビームＢｍの発散角が抑制され
る。By providing the electrode Gl, a pre-focusing lens is formed, which suppresses the divergence angle of the sinter beam Bm.
以下、第１図を参照しながら本発明の一実施例につ檗て
説明しよう。この第１図において、第５図と対応する部
分には同一符号を付し、その詳細説明は省略する。Hereinafter, one embodiment of the present invention will be explained with reference to FIG. In FIG. 1, parts corresponding to those in FIG. 5 are designated by the same reference numerals, and detailed explanation thereof will be omitted.
本例においては、電極Ｇ３と０４との間に円筒状の補助
電極Ｇ３が配される。そして、この電極Ｇ３と電極Ｇ３
との間にプリ１束レンズが形成されるようになされる。In this example, a cylindrical auxiliary electrode G3 is arranged between electrodes G3 and 04. And this electrode G3 and electrode G3
A pre-bundle lens is formed between the two.
この場合、電極Ｇｌも電極０３〜Ｇ５ と同様にガラス
ノ々ルプ（図示せず）の内面に、例えばクロム等の金属
が蒸着あるいはメッキされた後、例えばレーザービーム
により所定ノぞターンにカッティングされて形成される
。In this case, like the electrodes 03 to G5, the electrode Gl is also formed by vapor-depositing or plating a metal such as chromium on the inner surface of a glass nozzle (not shown), and then cutting it into a predetermined nozzle turn using a laser beam, for example. It is formed.
第２図は、電極Ｇ３ ｙ Ｇ３’ ｅ Ｇ４ ＊ Ｇ５
の展開図を示したものである。即ち、電極０３′は電極
Ｇ３と電極Ｇ４との間にこれらの電極の延長部が所定面
積比で交互に配されて形成される。そして、面積比の選
択により、この電極Ｇ３に一定電圧が印加された状態と
される。Figure 2 shows the electrode G3 y G3' e G4 * G5
This figure shows a developed diagram of . That is, the electrode 03' is formed between the electrode G3 and the electrode G4, with extensions of these electrodes being alternately arranged at a predetermined area ratio. Then, by selecting the area ratio, a constant voltage is applied to this electrode G3.
その他は第５図例と同様に構成される。The rest of the structure is the same as the example shown in FIG.
以上述べた本例によれば、電極Ｇ３と電極Ｇ３との間に
プリ集束レンズが形成され、これによって電子銃（Ｋ
＊ Ｇｌ ｍ Ｇ２ ）からの電子ビームＢｍの発散角
が抑制されると共に、高圧化するもののように軸上電位
分布の急激な変化が生じることもなく、鵡
軸上電位分布がなだらかになシ、収差を大幅低減するこ
とができる。According to the present example described above, a pre-focusing lens is formed between the electrode G3 and the electrode G3, and thereby the electron gun (K
*The divergence angle of the electron beam Bm from Gl m G2 ) is suppressed, and there is no sudden change in the axial potential distribution that occurs when the voltage is increased, and the axial potential distribution is gentle. Aberrations can be significantly reduced.
例えば、Ｓインチ管（管径φ＝１５ｕ＋）で、ビーム制
限開孔ＬＡからメツシュ状電極Ｇ６までの長さ１１＝４
２ｍｍのものを考える。電極Ｇ３の電位ＥＧ３＝５００
Ｖ 、電極Ｇ４の中心電位ＯＶ、電極Ｇ５の電位ＥＧ
５ ＝ ５００Ｖ 、 を極Ｇｓ ノ’に位ＥＧａ ＝
１２００Ｖ ノドき、第１図例のものは収差が４０μ
ｍであった。これに対し本例において、電極Ｇ３の長さ
を２鮎とし、電極０３′に印加する電圧ＥＧ３を変化さ
せたとき（ＥＧ３〜””０６ ＃φ、Ｉｌは上述と同じ
）の収差は、第３図実線に示すように変化する。これか
ら明らかなように、電極Ｇ３の印加電圧ＥＧ３が５００
ｖ以下で収差は４０μｍ以下となり、第５図例のものに
比べて、収差は減少する。尚、電圧ＥＧ３が５００Ｖ以
上では収差は４０μｍ以上となるが、これは電極Ｇ３と
電極０３′との間に凹レンズが形成され、電子ビームＢ
ｍの発散角を広げる方向に働くと共に軸上電位分布がな
だらかでなくなるためと考えられる。このように、本例
のように構成することにより電極Ｆ’ｃａの印加電圧に
もよるが、収差を低減することができる。For example, in an S inch pipe (tube diameter φ = 15u+), the length from the beam limiting aperture LA to the mesh electrode G6 is 11 = 4
Consider a 2mm one. Potential of electrode G3 EG3=500
V, center potential OV of electrode G4, potential EG of electrode G5
5 = 500V, place EGa = at the pole Gs no'
1200V, the example in Figure 1 has an aberration of 40μ.
It was m. On the other hand, in this example, when the length of the electrode G3 is set to 2 and the voltage EG3 applied to the electrode 03' is changed (EG3~""06 #φ, Il are the same as above), the aberration is It changes as shown by the solid line in Figure 3. As is clear from this, the applied voltage EG3 of the electrode G3 is 500
Below v, the aberration is 40 μm or less, and the aberration is reduced compared to the example shown in FIG. Note that when the voltage EG3 is 500 V or more, the aberration becomes 40 μm or more, but this is because a concave lens is formed between the electrode G3 and the electrode 03', and the electron beam B
This is thought to be because it acts in the direction of widening the divergence angle of m and the axial potential distribution becomes less gentle. In this way, by configuring as in this example, aberrations can be reduced, although it depends on the voltage applied to the electrode F'ca.
次に、第４図は本発明の他の実施例を示すものであり、
［ｆ＃ＬＧｚと電極Ｇ３との間に円板状の補助電極ＧＩ
が配される。その他は第１図例と同様に構成される。Next, FIG. 4 shows another embodiment of the present invention,
[A disc-shaped auxiliary electrode GI is placed between f#LGz and electrode G3.
will be arranged. The rest of the structure is the same as the example shown in FIG.
この第４図例において、電極ＧＢＶｃ印加する電圧ＥＧ
！を変化させたとき（ＥＧ３〜ＥＧ６１φ、Ｐは上述と
同じ）の収差は、第３図破線に示すように変化する。こ
れから明らかなように、電極Ｇ３の印加電圧Ｅ０３′が
５００ｖ以下で収差は４０μ訴なり、第５図例のものに
比べて収差は減少する。In this example in FIG. 4, the voltage EG applied to the electrode GBVc
! When changing (EG3 to EG61φ, P is the same as above), the aberration changes as shown by the broken line in FIG. As is clear from this, when the voltage E03' applied to the electrode G3 is 500 V or less, the aberration is 40 μm, which is reduced compared to the example shown in FIG.
このように、第４図例においても、第１図例と同様の作
用効果を得ることができる。In this way, the example in FIG. 4 can also provide the same effects as the example in FIG. 1.
尚、上述実施例は電極０３〜Ｇ５を有するユニポテンシ
ャル型のものに適用した例であるが、ノ々イデテンシャ
ル型のものにも同様に適用することができる。Although the above-mentioned embodiment is an example applied to a unipotential type having electrodes 03 to G5, it can be similarly applied to a non-identical type.
以上述べた本発明によれば、電子ビーム発散角抑制用の
補助電極を設けたので、収差の低減を図ることができる
。According to the present invention described above, since the auxiliary electrode for suppressing the electron beam divergence angle is provided, it is possible to reduce aberrations.
第１図は本発明の一実施例を示す構成図、第２図及び第
３図はその説明のための図、第４図は本発明の他の実施
例を示す構成図、第５図は従来例の構成図、第６図はそ
の説明のための図である。
Ｇ３ ＊ Ｇ４及びＧ５は夫々第３．第４及び第５グリ
ツド電極、Ｇ６はメツシュ状電極、０３′は補助電極で
ある。Fig. 1 is a block diagram showing one embodiment of the present invention, Figs. 2 and 3 are diagrams for explaining the same, Fig. 4 is a block diagram showing another embodiment of the present invention, and Fig. 5 is a block diagram showing an embodiment of the present invention. FIG. 6 is a diagram for explaining the configuration of the conventional example. G3 * G4 and G5 are the third. The fourth and fifth grid electrodes, G6 is a mesh electrode, and 03' is an auxiliary electrode.
Claims (1)
極を備え、上記第１及び第２の円筒電極によつて上記電
子ビームの集束を行う静電レンズ系が形成され、上記第
２の電極は上記電子ビームの偏向を行う偏向電極とされ
る静電集束・静電偏向型の撮像管において、 上記電子ビームの発散角抑制用の補助電極が上記第２の
円筒電極より電子銃側に設けられることを特徴とする静
電集束・静電偏向型の撮像管。[Scope of Claims] An electrostatic lens system comprising first and second cylindrical electrodes arranged along an electron beam path, and focusing the electron beam by the first and second cylindrical electrodes. In an electrostatic focusing/electrostatic deflection type image pickup tube in which the second electrode is a deflection electrode for deflecting the electron beam, the auxiliary electrode for suppressing the divergence angle of the electron beam is the second electrode. An electrostatic focusing/electrostatic deflection type imaging tube characterized by being provided closer to an electron gun than a cylindrical electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3995886A JPS62198035A (en) | 1986-02-25 | 1986-02-25 | Static focusing/static deflecting type image pickup tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3995886A JPS62198035A (en) | 1986-02-25 | 1986-02-25 | Static focusing/static deflecting type image pickup tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62198035A true JPS62198035A (en) | 1987-09-01 |
Family
ID=12567464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3995886A Pending JPS62198035A (en) | 1986-02-25 | 1986-02-25 | Static focusing/static deflecting type image pickup tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62198035A (en) |
-
1986
- 1986-02-25 JP JP3995886A patent/JPS62198035A/en active Pending
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