JPS62196826A - Exposure device - Google Patents
Exposure deviceInfo
- Publication number
- JPS62196826A JPS62196826A JP61041313A JP4131386A JPS62196826A JP S62196826 A JPS62196826 A JP S62196826A JP 61041313 A JP61041313 A JP 61041313A JP 4131386 A JP4131386 A JP 4131386A JP S62196826 A JPS62196826 A JP S62196826A
- Authority
- JP
- Japan
- Prior art keywords
- etched
- photomask
- mask
- glass plate
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 36
- 238000002834 transmittance Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
イ 発明の目的
ａ 産業上の利用分野
本発明は電子工業その他の分野において、フォトエツチ
ングにより各種のパターンを形成する際に用いるハード
コンタクト方式の露光装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION A. OBJECTS OF THE INVENTION a. Field of Industrial Application The present invention relates to a hard contact type exposure apparatus used in forming various patterns by photoetching in the electronic industry and other fields.
ｂ 従来の技術
フォトエツチングは写真製版技術から発展したものであ
るが、近時電子工業その池の分野に応用され重要な役割
を果している。例えばテレピプラクン管のシャドツマス
ク、トランジスタ・グイオードのメタルマスク、■Ｃ用
フォトマスク、リードフレーム、プリント基板、各種電
子部品等においては、各種のパターンをフォトエツチン
グによって形成している。B. Conventional Technology Photoetching was developed from photolithography, but has recently been applied to the electronic industry and plays an important role. For example, various patterns are formed by photo-etching in shadow masks for telepolar tubes, metal masks for transistors/diodes, photomasks for C, lead frames, printed circuit boards, various electronic parts, and the like.
本発明は、そのフォトエツチングによる製造工程中で、
重要な位置を占める露光装置に関するものである。一般
にフォトエツチングにおける蕗光手段は、パターン形成
用の被エツチング板に、フォトマスク即ちソフトマスク
（写真乾ｆｆｌ”ｉｉＩりまたはハードマスク（ガラス
板製）を密着（ハードコンタクト）させ、紫外線等の照
射によりフォトマスクのパターン画像を感光させ又いる
。この露光手段で問題となるのが、精密性と生産性であ
る。In the present invention, during the manufacturing process by photoetching,
This relates to exposure equipment, which occupies an important position. In general, the photoetching method in photoetching involves bringing a photomask, ie, a soft mask (photo dryer) or a hard mask (made of a glass plate), into close contact (hard contact) with the plate to be etched for pattern formation, and then irradiating it with ultraviolet rays, etc. The pattern image on the photomask is exposed to light using this exposure means.The problems with this exposure means are accuracy and productivity.
なぜなら、フォトエツチングは上記の如く写真製版技術
に基くものであるが、電子工業の分野に応用するには、
それに対応して高精度と高速性が要求されるのである。This is because, as mentioned above, photoetching is based on photoengraving technology, but in order to apply it to the electronic industry,
Correspondingly, high precision and high speed are required.
そこで従来の露光装置では、パターンを形成すべき物に
フォトマスクを密着させる手段として、吸引バキューム
法がとられ又いる。しかしこの吸引バキューム法では、
未た精密性と生産性の面で次の如き問題がある。■吸引
バキュームでは、フォトマスクの中央部に空気抜き口を
形成する必要があるが、その設計如何によっては充分な
密着が得られぬ場合かある。そのため分解能がおちたり
、パターンがぼやけたり、パターンの境界線がはっきり
出す、精度を損なう結果となる。■フォトマスクが、吸
引バキュームによって僅かながら内側へ歪曲を生じるこ
とがあり、それはパターンの寸法精度に影響を及ぼすこ
とになり、またそれを防止するため真空密着させるのに
手間を要する。■吸引バキュームでは、パターン形成用
の被エツチング板にフォトマスクをセントする際、その
密着作業に約６０〜９０秒を要し、またそれを解除する
のにも約１０〜２０秒を要する。そのため他の工程の処
理時間とバランスかとれず、連続処理による生産性を著
しく損ねている。＠ｉｌさらに、露光中の光源による発
熱でフォトマスクが膨張するのを防止するため、クーラ
等により強制的にクーリングしている。しかしその効果
は必ずしも安定的でなく、また大型のクーラを設けるの
は不経済でもある。Therefore, in conventional exposure apparatuses, a suction vacuum method is used as a means for bringing a photomask into close contact with an object on which a pattern is to be formed. However, with this suction vacuum method,
However, the following problems still exist in terms of precision and productivity. (2) In suction vacuum, it is necessary to form an air vent in the center of the photomask, but depending on its design, sufficient adhesion may not be achieved. This results in decreased resolution, blurred patterns, sharp pattern boundaries, and loss of precision. ■The photomask may be slightly distorted inward by the suction vacuum, which affects the dimensional accuracy of the pattern, and it takes time and effort to ensure vacuum contact to prevent this. (2) With a suction vacuum, when placing a photomask on a plate to be etched for pattern formation, it takes about 60 to 90 seconds to bring it into close contact, and it also takes about 10 to 20 seconds to release it. Therefore, the processing time cannot be balanced with the processing time of other processes, and the productivity of continuous processing is significantly impaired. @ilFurthermore, in order to prevent the photomask from expanding due to heat generated by the light source during exposure, it is forcibly cooled using a cooler or the like. However, the effect is not necessarily stable, and it is also uneconomical to provide a large cooler.
Ｃ発明が解決しようとする問題点
フォトエツチングのための従来の露光装置は、上記の如
く精度面や生産性に関し未だ不充分て′、多くの問題点
゛かある。本発明はそれら問題点の解決を目的としてい
る。即ち、シンプルな構成ながう、パターン形成用の被
エツチング板にフォトマスクを確実に密着できて、パタ
ーンが鮮明で特に境界線をはっきりさせ、また歪曲が生
じず寸法精度が高いとともに、充分な密１のための検査
や手間を不要とし、かつ処理時間を大幅に短縮できて連
続処理による生産性を向上させ、かつ大型クーラ等を設
置する不経済性もなくせるような露光装置を提供しよう
とするものである。C. Problems to be Solved by the Invention Conventional exposure apparatuses for photoetching are still insufficient in terms of accuracy and productivity as described above, and have many problems. The present invention aims to solve these problems. In other words, the simple structure allows the photomask to be firmly attached to the plate to be etched for pattern formation, the pattern is clear, especially the border lines, and there is no distortion and dimensional accuracy is high. We would like to provide an exposure device that eliminates the need for close-up inspections and labor, significantly shortens processing time, improves productivity through continuous processing, and eliminates the uneconomical cost of installing large coolers. That is.
口 発明の構成
ａ 問題点を解決するだめの手段
本発明に係る露光装置は、被エツチング板（りに密着さ
せるフォトマスク（２）と紫外線照射光源（３）との間
に、紫外線透過率がよく前記マスク（２）との接合面が
平滑状で、歪曲せぬ厚みをもつ加圧用ガラス板（４）を
設け、かつ該加圧用ガラス板（４）によりマスク（２）
を被エツチング＆ ＋１１へ密着させる加圧手段（５）
を設けてなるものである。Arrangement of the Invention (a) Means for Solving the Problems The exposure apparatus according to the present invention has a structure in which the ultraviolet transmittance is high between the photomask (2) that is brought into close contact with the plate to be etched and the ultraviolet irradiation light source (3). A pressurizing glass plate (4) is often provided that has a smooth joint surface with the mask (2) and is thick enough not to be distorted, and the pressurizing glass plate (4) is used to attach the mask (2) to the mask (2).
Pressurizing means (5) to bring the material into close contact with etching target & +11
It is made up of the following.
上記構成を上・下両面蕗光式のものについて具体的に示
すと、被エツチングＩ’ｈ （Ｉｔとはパターンを形成
すべき板で、例えば酸化膜を形成したシリコンクエバや
、表面に金属層を設けであるプリント基材、４・２合金
、銅、銅糸材その他の金属板等をいう。フォトマスク（
２）は、形成すべきパターンを形成したソフトマスクま
たはハードマスクであり、前記被エツチング板ｆ１＋を
間にして対称位置に各々設けである。同様に紫外線照射
光源（３）も対称位置に設けてあり、一般に水銀灯が用
いられる。To specifically show the above structure for a top and bottom double-sided film type, the plate to be etched I'h (It is a board on which a pattern is to be formed, for example, a silicon cube with an oxide film formed on it, or a metal layer on the surface). Refers to printed substrates, 4/2 alloy, copper, copper thread materials, and other metal plates that are used as photomasks (
2) is a soft mask or a hard mask on which a pattern to be formed is formed, and each mask is provided at a symmetrical position with the plate to be etched f1+ in between. Similarly, ultraviolet irradiation light sources (3) are also provided at symmetrical positions, and generally a mercury lamp is used.
加圧用ガラス扱（４）も、前記各フォトマスク（２１を
加圧ａＪ能に対称位置に設けてあり、紫外線透過率の良
いものとし、例えば石英ガラスを用いる。The pressurizing glass (4) is also made of a material having good ultraviolet transmittance, such as quartz glass, in which the photomasks (21) are arranged symmetrically with respect to the pressurizing function.
前記フォトマスク（２）との接合面は、各々充分な平滑
性を有するものとする。また該ガラス板ｆ４ｉの厚さは
歪曲せぬように例えば２０〜５０履程度とするが、前記
石英ガラス（密度２．２ ｇ ／ ｃｙｌ ）を用いて
面積を５００Ｘ５００ｍｍとした場合、その自重は厚さ
が２０＋ｍのもので１１１ｇ、同じく５０間のもので２
７．５ ｋｇとなる。Each surface to be bonded to the photomask (2) shall have sufficient smoothness. In addition, the thickness of the glass plate f4i is, for example, about 20 to 50 so as not to be distorted, but if the quartz glass (density 2.2 g/cyl) is used and the area is 500 x 500 mm, its own weight will be The one with a length of 20+m weighs 111g, and the one with a length of 50+m weighs 2
It weighs 7.5 kg.
加圧手段＋５］ Ｉ／′ｉ、加圧用ガラス板（４）を押
圧することでフォトマスク（２）を被エツチング板（１
）へ密着させるものであり、例えば油圧シリングやエア
シリンダを用いる。Pressure means +5] I/'i, by pressing the pressure glass plate (4), the photomask (2) is pressed against the plate to be etched (1).
), for example, using a hydraulic cylinder or an air cylinder.
図において、（６）はマスクセット枠であり、２枚以上
のフォトマスク（２）を平面的に並べて保合可能で、か
つ前記被エツチング板［１＋と各加圧用ガラス板（４）
との間で各々横方向にスライド可能として、フォトマス
ク（２）のプレセットを図るものである。In the figure, (6) is a mask set frame, which is capable of holding two or more photomasks (2) side by side in a plane, and which holds the etched plate [1+ and each pressurizing glass plate (4)].
The photomask (2) can be preset by being slidable laterally between the two.
（７）は加圧手段（５）による押え杆、ｔ８Ｈ−ｊ下側
のガラス板（４）の支丞杆、（９）は遮光板である。(7) is a presser rod for the pressurizing means (5), a support rod for the glass plate (4) on the lower side of t8H-j, and (9) is a light shielding plate.
なお前記被エツチング板ｍは連続した帯状のもので、図
では手前方向へ間欠移動させるようにしであるが、単板
を１枚毎に置くようにしてもよい。また前記は上・下両
面露光式であるが、片面露光式にすることも可能である
。The plate m to be etched is a continuous strip, and although it is shown as being moved intermittently toward the front in the figure, it may be arranged to place a single plate one by one. Further, although the above-mentioned type is an exposure type on both upper and lower sides, it is also possible to use a single side exposure type.
ｂ 作 用
本発明の露光装置の作動状態を、図示した両面露光式に
ついて説明する。予じめ各面のフォトマスク（２）を、
各々マスクセット枠（６）内にセントし又おくが、この
場合ブリセント用に次回使用のマスク（２）も並べてセ
ットし又おけばよい。b. Function The operating state of the exposure apparatus of the present invention will be explained with reference to the illustrated double-sided exposure type. Apply photomask (2) on each side in advance.
Each mask is placed in the mask set frame (6), but in this case, the mask (2) to be used next time for Briscent may also be placed and placed side by side.
次に被エツチング板［１＋を本装置内に送り込んで停止
させ、同時に前記各マスクセット枠（６）をスライドさ
せて、所望パターンの各フォトマスク（２）を被エツチ
ング板（１）間に位置させる。Next, feed the plate to be etched [1+] into the device and stop it, and at the same time slide each mask set frame (6) to position each photomask (2) of the desired pattern between the plates to be etched (1). let
この状態で上側の加圧用ガラス板（４）を自重により降
下させ、上側のフォトマスク（２）を押下ける。In this state, the upper pressurizing glass plate (4) is lowered by its own weight, and the upper photomask (2) is pressed down.
これにより第２図で示される如く、被エツチング板（１
）・下側のフォトマスク（２）も押下けられて下側のガ
ラス板（４）上に載置され、被エツチング板ｆ１＋を間
にして、上・下にフォトマスク（２）・ガラス板（４）
が重なることになる。この場合、上側のガラス板（４）
の自重は、前記の如く面積が５００Ｘ５００ｆｌのもの
の場合、厚さが２０Ｗｎｎで１１に７、同５０ｍｍで２
７．５に９程度ある。そのため該加圧用ガラス板（４）
の自重によって、上・下のフォトマスク（２）が被エツ
チング板（１）の両面に各々仮固定される。その後加圧
手段（５）にて、本格的に加圧用ガラス板（４）を加圧
することにより、各フォトマスクｆ２） ｋ 被エツチ
ング板（１）Ｋ密着させる。As a result, as shown in FIG.
)・The lower photomask (2) is also pushed down and placed on the lower glass plate (4), and the photomask (2) and the glass plate are placed above and below with the plate to be etched f1+ in between. (4)
will overlap. In this case, the upper glass plate (4)
As mentioned above, if the area is 500 x 500fl, the weight is 11 to 7 if the thickness is 20Wnn, and 2 if the thickness is 50mm.
There are about 7.5 to 9. Therefore, the pressurizing glass plate (4)
The upper and lower photomasks (2) are temporarily fixed to both sides of the plate to be etched (1) by their own weight. Thereafter, the pressurizing means (5) presses the pressurizing glass plate (4) in earnest, so that each photomask f2)k and the plate to be etched (1)K are brought into close contact.
上記において加圧手段（５）Ｋよる加圧力は、密着に必
要な力から上側のガラス板（４）の自重による圧力を差
し引いたものである。また各ガラス板（４）の各フォト
マスク（２）への接合面が平滑であり、かつ歪曲せぬ厚
さを有するので、各フォトマスク（２）の被エツチング
板ｆ１＋への密＃は、確実かつ充分なものとなる。In the above, the pressurizing force by the pressurizing means (5)K is the force required for close contact minus the pressure due to the weight of the upper glass plate (4). Also, since the bonding surface of each glass plate (4) to each photomask (2) is smooth and has a thickness that does not cause distortion, the tightness # of each photomask (2) to the plate to be etched f1+ is as follows. It will be certain and sufficient.
続いて、紫外線照射光源（３）としての例えば水銀灯を
、各々点灯して露光する。その際、各光源（３）とマス
ク（２）との間に各々加圧用ガラス板（４）が介在して
いるが、該ガラス＆＋４８４石英ガラスの如く紫外線透
過率の良いものを用いているため、少々厚さがあっても
光の損失は殆んどない。また前記の如く各ガラス板［４
）ｌ’ｉ、フォトマスク（２）との接合面か充分に平滑
性を有して、各フォトマスク（２）を被エツチング板ｆ
１）に充分に密着させている。そのためこの露光は分解
能がよくパターンは鮮明となるとともに、境界線もはっ
きり出て精度がよくなる。同時に各ガラス板（４）は歪
曲せぬ厚みをもたせてあり、各フォトマスク（２）を均
一に加圧しているため、この点からも寸法精度が良好な
露光を行なえる。Subsequently, a mercury lamp, for example, as an ultraviolet irradiation light source (3) is turned on for exposure. At that time, pressurizing glass plates (4) are interposed between each light source (3) and the mask (2), but because they are made of glass with good ultraviolet transmittance, such as 484 quartz glass. , even if it is a little thick, there is almost no loss of light. In addition, as mentioned above, each glass plate [4
) l'i, the bonding surface with the photomask (2) has sufficient smoothness, and each photomask (2) is placed on the plate to be etched f.
1) is fully adhered to. Therefore, this exposure has good resolution and the pattern is clear, and the border lines are also clearly visible, improving accuracy. At the same time, each glass plate (4) has a thickness that does not cause distortion, and each photomask (2) is pressurized uniformly, so that exposure with good dimensional accuracy can be performed from this point of view as well.
その後は加圧手段（５）により上側の加圧用ガラス板（
４）を上昇して間をあけ、両フォトマスク（２）間に次
の被エツチング板ｆ＋）を送り込めばよい。また［］［
Ｉ記の如きプレセント用のマスクセット枠（６）を用い
ておれば、それをスライドさせることで次のフォトマス
ク（２）へのマスク変更を容易・迅速に行なえる。After that, the upper pressurizing glass plate (
4) to leave a gap between the two photomasks (2), and then feed the next plate f+) to be etched between the two photomasks (2). Also[][
If a mask set frame (6) for presents as shown in I is used, the mask can be easily and quickly changed to the next photomask (2) by sliding it.
上記場合において、両フォトマスク（２）を被エツチン
グ板（１）へ密着させるだめのセット時間は約１０秒、
また密着状態を解くオフセント時間も約１０秒間である
。これは、従来の吸引バキューム法が吸引によるセット
時間に約６０〜９０秒、それを解除するオフセット時間
に約１０〜２０秒間を要するのに比べると、１回の処理
時間を約１０〜２０秒間節約でき、１ ／ ３．５〜ｌ
／ ５．５に短縮できることになる。In the above case, the setting time for bringing both photomasks (2) into close contact with the plate to be etched (1) is approximately 10 seconds.
Further, the off-cent time for releasing the close contact state is also about 10 seconds. This means that the conventional suction vacuum method requires approximately 60 to 90 seconds to set the suction and approximately 10 to 20 seconds to offset the suction, while the processing time for one process is approximately 10 to 20 seconds. Saves 1/3.5~l
/ This can be shortened to 5.5.
さらに本発明では、各フォトマスク（２）と光源（３）
との間に加圧用ガラス板（４）があるので、露光時に光
源（３）からの熱がフォトマスク（２）へ直接的に伝わ
るのを防止する断熱作用がある。そのためフォトマスク
（２）の熱膨張を押えることができ、大型の冷却装置を
設けずともパターンの寸法精度は安定している。Furthermore, in the present invention, each photomask (2) and a light source (3)
Since there is a pressurizing glass plate (4) between the photomask and the photomask, there is a heat insulating effect that prevents heat from the light source (3) from being directly transmitted to the photomask (2) during exposure. Therefore, thermal expansion of the photomask (2) can be suppressed, and the dimensional accuracy of the pattern is stable even without providing a large cooling device.
ハ 発明の効果
ａ 本発明は従来の吸引バキューム法に比べると、精密
性に優れる。即ち、従来の吸引バキューム法では、空気
抜き口の設計如何によってはフォトマスクが被エツチン
グ板に密行せず、そのため分解能がおちたり、パターン
がぼやけたり、パターンの境界線がはっきり出す、精度
が損なわれることかあった。これに対して本発明ではフ
ォトマスクを、それとの接合面が平滑な加圧用ガラス板
にて加圧するものである。それゆえ、ガラス板の自重に
より初期加圧がなされてｇ、固定され、続く加圧手段に
よる本加圧により、この平滑な接合面をもつガラス板を
介して、フォトマスクｅ［エツチング板へ充分に密着さ
せることができる。したがって本発明によれば、分解能
がよく、パターンがぼやけぬとともに、パターンの境界
線もはっきり出た高精度な露光ができるものである。C. Effects of the Invention a. The present invention is superior in precision compared to the conventional suction vacuum method. In other words, in the conventional suction vacuum method, depending on the design of the air vent, the photomask does not come close to the etching plate, resulting in decreased resolution, blurred patterns, sharp pattern boundaries, and impaired accuracy. There were times when I got caught. On the other hand, in the present invention, the photomask is pressurized using a pressurizing glass plate having a smooth surface to be bonded to the photomask. Therefore, initial pressure is applied to the glass plate by its own weight to fix it, and then main pressure is applied by the pressure means to apply sufficient pressure to the photomask e [to the etching plate] through this glass plate with a smooth bonding surface. It can be brought into close contact with the Therefore, according to the present invention, it is possible to perform highly accurate exposure with good resolution, patterns that are not blurred, and pattern boundaries that are clearly visible.
しかも本発明の加圧用ガラス板は、歪曲せぬ厚さのもの
としであるので、これがフォトマスクを均一に被エツチ
ング板へ密着させることになり、この点からも精密性が
確保できる。さらにこの厚めの加圧用ガラス板が、フォ
トマスクと露光光源との聞にあることにより、該ガラス
板が断熱材の役割をも果たすことになって、フォトマス
クが光源からの発熱で熱膨張するのを押えられる。その
ため大型の冷却装置を設けるような不経済なことをせず
とも、パターンの寸法精度を良好に維持することができ
る。Moreover, since the pressurizing glass plate of the present invention has a thickness that does not cause distortion, this allows the photomask to be uniformly brought into close contact with the plate to be etched, and precision can also be ensured from this point of view. Furthermore, by placing this thick pressure glass plate between the photomask and the exposure light source, the glass plate also plays the role of a heat insulator, causing the photomask to thermally expand due to heat generated from the light source. can be held down. Therefore, the dimensional accuracy of the pattern can be maintained well without having to do something uneconomical such as installing a large cooling device.
ｂ 本発明は従来の吸引バキューム法に比べると、処理
時間を短縮でき生産性を向上できる。b Compared to the conventional suction vacuum method, the present invention can shorten processing time and improve productivity.
即ち、従来のバキューム吸引法では、航記の如くフォト
マスクを被エツチング板に密着させるためのセット時間
が約６０〜９０秒、密着状態を解くオフセント時間が約
１０〜２０秒を要した。これでは他の処理工程の時間と
バランスがとれず、連続処理による量産をはかれない。That is, in the conventional vacuum suction method, it takes about 60 to 90 seconds to set the photomask in close contact with the plate to be etched, and it takes about 10 to 20 seconds to break the contact. This does not balance the time required for other processing steps, and mass production through continuous processing cannot be achieved.
これに対し１本発明では、フォトマスクを加圧用ガラス
板の自重と加圧手段により被エツチング板へ密着させる
ものである。それゆえ、本発明によりフォトマスクを被
エツチング板へ密着させるセント時間は、前記の如く約
１０秒、またオフセット時間も約１０秒でよい。したが
って１回の処理時間で約５０〜９０秒問を節約でき、１
／ ３．５〜１７５．５程度に短縮できるので、露光
処理時開が他の工程の処理時間とバランスをとれること
になり、全工程を通じての連続処理ができ、生産性を大
幅に向上できるものである。In contrast, in the present invention, the photomask is brought into close contact with the plate to be etched by the weight of the pressurizing glass plate and the pressurizing means. Therefore, according to the present invention, the cent time for bringing the photomask into close contact with the plate to be etched may be about 10 seconds, as described above, and the offset time may also be about 10 seconds. Therefore, approximately 50 to 90 seconds can be saved in one processing time, and 1
/ Since it can be shortened to about 3.5 to 175.5, the opening during exposure processing can be balanced with the processing time of other processes, allowing continuous processing throughout the entire process and greatly improving productivity. It is.
図は本発明を上・下両面露光式とした実施例を示すもの
で、第１図はフォトマスクを密着前の縦断正面図、第２
図はフォトマスクを密着させ露光中の縦断正面図である
。
図面符号（１）・・・被エツチング板、（２）・・・フ
ォトマスク、（３）・・・光源、（４）・・・加圧用ガ
ラス板、（５）・・・加圧手段。The figures show an embodiment in which the present invention is an upper and lower double-sided exposure type.
The figure is a longitudinal sectional front view during exposure with a photomask in close contact. Drawing code (1)...Plate to be etched, (2)...Photomask, (3)...Light source, (4)...Glass plate for pressurization, (5)...Pressure means.
Claims (1)
（２）と紫外線照射光源（３）との間に、紫外線透過率
がよく前記マスク（２）との接合面が平滑状で、歪曲せ
ぬ厚さをもつ加圧用ガラス板（４）を設け、かつ該ガラ
ス板（４）によりマスク（２）を被エッチング板（１）
へ密着させる加圧手段（５）を設けたことを特徴とする
、露光装置。[1] Between the photomask (2) that is brought into close contact with the plate to be etched (1) and the ultraviolet irradiation light source (3), use a material that has good ultraviolet transmittance, has a smooth joint surface with the mask (2), and is free from distortion. A pressurizing glass plate (4) having a thickness of
An exposure apparatus characterized by being provided with a pressurizing means (5) for bringing the device into close contact with the exposure device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61041313A JPS62196826A (en) | 1986-02-24 | 1986-02-24 | Exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61041313A JPS62196826A (en) | 1986-02-24 | 1986-02-24 | Exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62196826A true JPS62196826A (en) | 1987-08-31 |
Family
ID=12605016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61041313A Pending JPS62196826A (en) | 1986-02-24 | 1986-02-24 | Exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62196826A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7754131B2 (en) | 2002-08-27 | 2010-07-13 | Obducat Ab | Device for transferring a pattern to an object |
| US9513551B2 (en) | 2009-01-29 | 2016-12-06 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
| CN108089408A (en) * | 2017-12-12 | 2018-05-29 | 中国科学院光电技术研究所 | A kind of passive type leveling retaining mechanism applied to lithographic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5527245U (en) * | 1978-08-08 | 1980-02-21 | ||
| JPS5520244B2 (en) * | 1977-09-01 | 1980-05-31 |
-
1986
- 1986-02-24 JP JP61041313A patent/JPS62196826A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5520244B2 (en) * | 1977-09-01 | 1980-05-31 | ||
| JPS5527245U (en) * | 1978-08-08 | 1980-02-21 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7754131B2 (en) | 2002-08-27 | 2010-07-13 | Obducat Ab | Device for transferring a pattern to an object |
| US9513551B2 (en) | 2009-01-29 | 2016-12-06 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
| CN108089408A (en) * | 2017-12-12 | 2018-05-29 | 中国科学院光电技术研究所 | A kind of passive type leveling retaining mechanism applied to lithographic equipment |
| CN108089408B (en) * | 2017-12-12 | 2020-03-20 | 中国科学院光电技术研究所 | Passive leveling and locking mechanism applied to photoetching device |
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