JPS62195610A - Photodetecting device - Google Patents
Photodetecting deviceInfo
- Publication number
- JPS62195610A JPS62195610A JP3681886A JP3681886A JPS62195610A JP S62195610 A JPS62195610 A JP S62195610A JP 3681886 A JP3681886 A JP 3681886A JP 3681886 A JP3681886 A JP 3681886A JP S62195610 A JPS62195610 A JP S62195610A
- Authority
- JP
- Japan
- Prior art keywords
- optical fiber
- light
- receiving element
- light receiving
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013307 optical fiber Substances 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 4
- 239000000284 extract Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000006185 dispersion Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Light Guides In General And Applications Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
１１へ１江
［産業上の利用分野］
本発明は光検出装置に関し、詳しくは光フアイバ中を伝
送される光の強度を検出する光検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photodetection device, and more particularly to a photodetection device that detects the intensity of light transmitted through an optical fiber.
［従来の技術］
従来、この種の光検出装置としては、光導波路として形
成された光フアイバ中を伝送される光を、光フアイバ端
面から外部の受光素子に轡いて、その強度を検出するも
のが知られている。従って、光ファイバからの射出光を
直接受光素子に入光するにせよレンズ等により集光して
から入光するにせよ、光軸調整を行なっていた。[Prior Art] Conventionally, this type of photodetection device detects the intensity of light transmitted through an optical fiber formed as an optical waveguide by passing the light from the end face of the optical fiber to an external light receiving element. It has been known. Therefore, whether the light emitted from the optical fiber enters the light-receiving element directly or after being focused by a lens or the like, the optical axis must be adjusted.
［発明が解決しようとする問題点１
しかしながら、こうした光検出装置の光軸調整は煩瑣な
手間を必要とする上、調整が不充分であったり、外力や
経年変化等によって光軸にずれが生じたりすると、受光
素子の出力の低下や変動を招致しで、光強度の検出が充
分に行なえないことがあるといった問題があった。また
、光ファイバ端面と受光素子＆面とが離間しているので
、これらの而での反ｌＪ］に起因する検出誤差が生じる
ことも考えられた。[Problem to be Solved by the Invention 1] However, adjusting the optical axis of such a photodetecting device requires a lot of time and effort, and the adjustment may be insufficient or the optical axis may shift due to external force or aging. If this happens, there is a problem that the output of the light-receiving element may decrease or fluctuate, and the light intensity may not be detected satisfactorily. Furthermore, since the end face of the optical fiber and the light-receiving element & surface are separated from each other, it was considered that a detection error due to the anti-lJ between them may occur.
そこで、本発明はこれらの問題を解決し、光軸調整を必
要どしない光検出装置を捉供することを目的としてなさ
れた。Therefore, the present invention has been made with the object of solving these problems and providing a photodetecting device that does not require optical axis adjustment.
ＲＪＪＬ罹屑工
Ｅ問題点を解決するための手段］
゛かかる目的を達成すべく、本発明は問題点を解決する
ための手段として次の構成をとった。即ち、光導波路と
して形成された光ファイバと、該光ファイバの一端面に
直接形成され、該光ファイバを透過してきた光の強度を
検出する受光素子と、からなる光検出装置の構成がそれ
である。Means for Solving the Problems of RJJL Scrap Work E] ゛In order to achieve the above object, the present invention has the following configuration as a means for solving the problems. That is, this is the configuration of a photodetecting device consisting of an optical fiber formed as an optical waveguide, and a light receiving element that is formed directly on one end surface of the optical fiber and detects the intensity of the light that has passed through the optical fiber. .
ここで、゛受光素子を、光ファイバー端面に直接形成さ
れた透明電極、と、入射する光の強度に応じて電気的特
性が変化する半導体と、該半導体の電気的特性の変化を
前記透明電極と共に取り出す電極と、を積層して形成し
、光フアイバ中を伝送される光の強度を電気イシ弓とし
て容易に取り出ず構成とすることができる。また、光フ
ァイバを複数の光導波路からなるマルチファイバとし、
受光素子の前記透明電極を複数の光導波路に対して其通
に形成し、前記半導体と前記電極とは前記複数の光導波
路毎に形成丈ることにより、多数の光検出装置を簡易に
構成することもできる。尚、こうした半導体としては、
例えばシランを材料ガスとするプラズマ気相化学反応法
により形成される水素化されたアモルファスシリコンの
太陽電池やボ１〜ダイオード等種々のものが考えられる
。また、材料ガスや気相化学反応法も多様に選択りるこ
とができ、光ファイバの態様等に応じてこれらを適宜用
いればよい。Here, ``a light-receiving element includes a transparent electrode formed directly on the end face of an optical fiber, a semiconductor whose electrical characteristics change depending on the intensity of incident light, and a change in the electrical characteristics of the semiconductor that changes in accordance with the intensity of incident light. It is possible to form a structure in which the intensity of the light transmitted through the optical fiber is not easily extracted as an electric beam by stacking the electrodes and the electrodes to be extracted. In addition, the optical fiber is made into a multi-fiber consisting of multiple optical waveguides,
By forming the transparent electrode of the light-receiving element so as to communicate with the plurality of optical waveguides, and by forming the semiconductor and the electrode with different lengths for each of the plurality of optical waveguides, a large number of photodetecting devices can be easily constructed. You can also do that. Furthermore, as such semiconductors,
For example, various types of solar cells and diodes made of hydrogenated amorphous silicon formed by a plasma vapor phase chemical reaction method using silane as a material gas can be considered. Further, a variety of material gases and vapor phase chemical reaction methods can be selected, and these may be used as appropriate depending on the form of the optical fiber.
更に、受光素子を、光ファイバー端面に直接設けられた
光導電層と、該光導電層上に離間して設けられた２つの
電極とから構成することも何等差支えなく、伝送される
光の強度を、電気抵抗として検出する構成とすることも
できる。この場合には、光フアイバ中を伝送される光は
直接、光導電層に入射するので、微弱な光の検出も良好
に行なうことができる。Furthermore, there is no problem in constructing the light receiving element from a photoconductive layer provided directly on the end face of the optical fiber and two electrodes provided apart from each other on the photoconductive layer, so that the intensity of the transmitted light can be adjusted. , it can also be configured to be detected as electrical resistance. In this case, since the light transmitted through the optical fiber is directly incident on the photoconductive layer, even weak light can be detected satisfactorily.
［作用］
上記構成を有する本発明の光検出装置は、光フアイバ中
を伝送される光を、外部に導出することなく受光素子に
導くので、光軸ＦｊＡ整等を行なわなくとも、光の強度
を良好に検出する。[Function] The photodetector of the present invention having the above configuration guides the light transmitted through the optical fiber to the light receiving element without leading it to the outside, so the intensity of the light can be adjusted without adjusting the optical axis FjA. is detected well.
［実施例１
以上説明した本発明の構成を一層明らかにする為に、次
に本発明の好適な実施例について説明する。第１図は、
本発明−実施例としての光検出装置の構造を示す軸方向
断面図である。[Example 1] In order to further clarify the configuration of the present invention described above, a preferred example of the present invention will be described next. Figure 1 shows
FIG. 1 is an axial cross-sectional view showing the structure of a photodetection device as an example of the present invention.
図示づ゛るように、本実施例の光検出装置は、屈折率ス
テップインデックス形の光ファイバ１の端面に、プラズ
マＣＶＤ （気相化学反応法）法により受光素子３を形
成したものである。光ファイバ１は、シリカ（Ｓ ｉ
Ｏｚ ）を主成分とし、屈折率の高い中心部分コア１ａ
と屈折率の低い周辺部分クラッド１ｂとの二重構造を有
する周知のものであり、外周に被１１ｃを備える。As shown in the figure, in the photodetection device of this embodiment, a light receiving element 3 is formed on the end face of an optical fiber 1 of a refractive index step index type by plasma CVD (vapor phase chemical reaction method). The optical fiber 1 is made of silica (Si
The central core 1a has a high refractive index and has a high refractive index.
This is a well-known structure having a double structure of a peripheral portion cladding 1b having a low refractive index and a covering 11c on the outer periphery.
この光ファイバ１の端面は光の散乱が生じない程度に鏡
面加工されており、この上に受光素子３が直接形成され
ている。受光素子３は、光ファイバ１の端面に接する半
導体薄膜（ＭＥＳＡ膜、ＩＴｏ膜等）の透明電極５と、
ｐ−１−ｎ接合されたアモルファスシリコン層７と、金
ｍ電極９とから構成されている。アモルファスシリコン
層７は、シラン（Ｓｉｎト１２ｎ＋２）を材料ガスとし
て、プラズマＣＶＤ等の手法により、形成されるが、こ
の結！！！１！７られる水素化されたアモルファスシリ
コンＪＩ１７は、ジボラン（Ｂ ２ Ｈｓ ） 、ホス
フィン（］〕ト］３）等の添加によりｐ形化、ｎ形化が
容易であり、優れた光電特性、光学吸収特性を有する。The end face of this optical fiber 1 is mirror-finished to such an extent that no scattering of light occurs, and the light-receiving element 3 is directly formed thereon. The light receiving element 3 includes a transparent electrode 5 made of a semiconductor thin film (MESA film, ITo film, etc.) that is in contact with the end surface of the optical fiber 1;
It is composed of an amorphous silicon layer 7 and a gold electrode 9 which are connected to each other in a p-1-n manner. The amorphous silicon layer 7 is formed by a method such as plasma CVD using silane (Sin 12n+2) as a material gas. ! ! 1!7 Hydrogenated amorphous silicon JI17 can be easily converted into p-type or n-type by adding diborane (B 2 Hs ), phosphine (]), etc., and has excellent photoelectric properties and optical properties. Has absorption properties.
本実施例では、このアモルファスシリコン層７は光フア
イバ１端而より、ｐｉ、！ （ｉ！！抵抗）ｆ４．ｎ層
の順に積層化されており、ｐ−１−ｎホトダイオ−ドと
同等の構造を有づるアモルファスシリコン太陽電池とし
て形成されている。また、両電極５．９間には負荷抵抗
器Ｒ１が接続されており、太１［池として働く受光素子
３により電流が流れる構成となっている。尚、水素化さ
れたアモルファスシリコンｍ７は、プラズマＣＶＤに限
らず、光ＣｖＤや電子ナイクロトロン共鳴プラズマＣｖ
Ｄ等の手法によっても形成することができる。In this embodiment, this amorphous silicon layer 7 is made of optical fiber 1, pi,! (i!! resistance) f4. It is formed as an amorphous silicon solar cell having a structure equivalent to a p-1-n photodiode, in which n layers are laminated in this order. Further, a load resistor R1 is connected between both electrodes 5.9, and a current flows through the light-receiving element 3, which acts as a resistor. Note that hydrogenated amorphous silicon m7 can be processed not only by plasma CVD but also by optical CVD and electron nicrotron resonance plasma CVD.
It can also be formed by a method such as D.
以上の構成を有する本実施例においては、光ファイバ１
のコア１ａを伝播してきた光は、光フフイバ１の端面よ
り透明電極５を介して受光素子３のアモルファスシリコ
ン層７に直接入射する。この時、アー［ルファスシリコ
ンｍ７は入射した光の強度に応じた起電力を生じ、これ
により負荷抵抗器Ｒ１に流れる電流に基づいて出力信号
Ｉを得ることができる。In this embodiment having the above configuration, the optical fiber 1
The light propagating through the core 1a of the optical fiber 1 directly enters the amorphous silicon layer 7 of the light receiving element 3 via the transparent electrode 5 from the end face of the optical fiber 1. At this time, the alpha silicon m7 generates an electromotive force according to the intensity of the incident light, and thereby an output signal I can be obtained based on the current flowing through the load resistor R1.
本実施例の光検出装置では、光ファイバ１の端部に、透
明電極５を直接接触させて受光素子３を形成しているの
で、光フアイバ１中を伝送された光は、透明電極５にＪ
：る減衰を除いて、総て受光素子３内での光電変換に供
される。従って、本実施例の光検出装置は、光フアイバ
１端而や受光素子３表面での光の反射や散乱がほとんど
ないことと相俟って、高い検出効率を実現している。尚
、第２図に示すように、受光素子３を、光ファイバ１端
面の一部に形成し、光）７・イバ１中を伝送され端面よ
り外部に導出される光の強度を、受光素子３によってモ
ニタタるよう構成することもできる。こうした光検出装
置は、パルス発振レーザのように出力の強度を一定とづ
ることが困難な光源を用いて、種々、の計測を行なう場
合等に有用である。尚、これらの光検出装置では、アモ
ルファスシリコン層７の起電力を直接増幅器に入力し、
信号として取出ずよう構成することもできる。In the photodetection device of this embodiment, the transparent electrode 5 is brought into direct contact with the end of the optical fiber 1 to form the light receiving element 3, so that the light transmitted through the optical fiber 1 is transmitted to the transparent electrode 5. J
: All of the light except for attenuation is subjected to photoelectric conversion within the light receiving element 3. Therefore, the photodetection device of this embodiment achieves high detection efficiency, in combination with the fact that there is almost no reflection or scattering of light on the surface of the optical fiber 1 or the light receiving element 3. As shown in FIG. 2, a light receiving element 3 is formed on a part of the end face of the optical fiber 1, and the intensity of the light transmitted through the optical fiber 1 and led out from the end face is measured by the light receiving element 3. It can also be configured to be monitored by 3. Such a photodetector is useful when performing various measurements using a light source such as a pulsed laser whose output intensity is difficult to maintain at a constant level. In addition, in these photodetecting devices, the electromotive force of the amorphous silicon layer 7 is input directly to the amplifier,
It can also be configured so that it is not taken out as a signal.
次に本発明の第２の実施例について説明する。Next, a second embodiment of the present invention will be described.
第２実施例の光検出装置は、第３図に示すように、コア
１１ａ、クラッド１１ｂ、被［１１ｃＪ：りなる第１実
施例と同様の光ファイバ１１の端面に、透明電極１５．
・光導ｍ層１７．金属電極１９よりなる受光素子２０を
設けたものである。光導電層１７は、硫化カドミウムＣ
ｄＳあるいは硫化鉛ＰｂＳ等から形成されており、入射
する光の強度に応じてそのインピーダンス（抵抗値）は
変化する。As shown in FIG. 3, the photodetecting device of the second embodiment has a core 11a, a cladding 11b, a transparent electrode 15.
・Light guiding m layer 17. A light receiving element 20 made of a metal electrode 19 is provided. The photoconductive layer 17 is made of cadmium C sulfide.
It is made of dS or lead sulfide PbS, and its impedance (resistance value) changes depending on the intensity of incident light.
従って、この抵抗値Ｒの変化を、外部の電ＩＩＥ２より
供給される電流の変化として、ここでは抵抗＠Ｒ２の電
圧として取り出すことにより、光フアイバ１内を伝送さ
れる光の強度を容易に検出することができる。Therefore, by extracting this change in the resistance value R as a change in the current supplied from the external electric current IIE2, here as the voltage across the resistor @R2, the intensity of the light transmitted within the optical fiber 1 can be easily detected. can do.
本実施例によれば、第１実施例と同様に高い変換効率が
得られる上、受光素子２０を光導ｆｆ１Ｗ４１７により
構成して、Ｎ造工敗、コスト等の低減を図ることも出来
る。According to this embodiment, not only can a high conversion efficiency be obtained as in the first embodiment, but also the light receiving element 20 can be configured by the light guide ff1W417, thereby reducing manufacturing costs, costs, etc.
尚、第４図に示すように、光３’）ｆｆｉｉ！１７を光
ファイバ１１の端面に直接形成し、その上に、金属電極
１９ａ、１９ｂを離開して設番プることも何等差支えな
い。この場合には、透明電極を用いる必要がなく、透明
電極により光の減衰が存在しないので、充電変換効率を
一層良好なものにすることができる。また、製造工数、
コスト共に低減することもできる。In addition, as shown in FIG. 4, the light 3') ffii! 17 may be formed directly on the end face of the optical fiber 11, and the metal electrodes 19a and 19b may be separated and placed thereon. In this case, there is no need to use a transparent electrode, and there is no attenuation of light due to the transparent electrode, so that the charge conversion efficiency can be made even better. In addition, manufacturing man-hours,
It is also possible to reduce both costs.
更に、第５図（Ａ）、（Ｂ）に示すように、金ｌｆｆ１
電極１９ａ、１９ｂＧ；ｉ、光導？ｌ！１１１７の周部
に設けることも考えられる。この場合には、金属電極を
光ファイバ１１の端部外周にＭ首した後、両サイドの電
極を機械的に除去して分離・絶縁して。Furthermore, as shown in FIGS. 5(A) and (B), gold lff1
Electrodes 19a, 19bG; i, light guide? l! It is also conceivable to provide it around the periphery of 1117. In this case, after a metal electrode is attached to the outer periphery of the end of the optical fiber 11, the electrodes on both sides are mechanically removed to separate and insulate.
もよいし、電極を蒸着する際にマスキングを施すことに
より２つの電極１９ａ、１９ｂを形成してもよい。この
例では、金属？！極１９ａ、１９ｂと光導電層１７との
接触面積が増え（接触抵抗は減少し）光検出装置として
の感度の向上に資することができる。Alternatively, the two electrodes 19a and 19b may be formed by masking when depositing the electrodes. In this example, metal? ! The contact area between the poles 19a, 19b and the photoconductive layer 17 increases (contact resistance decreases), which contributes to improving the sensitivity of the photodetecting device.
次に、本発明の第３実施例について説明づる。Next, a third embodiment of the present invention will be described.
第３実施例のコネクタ付光検出装置は、第６図に示ずよ
うに、光ファイバ２１の端面に第１実施例と同様に透明
′Ｎｉ極２５．アモルファスシリコン層２７、金属電極
２９よりなる受光素子３ｏを設け、これに更にゴネクタ
３２を一体に組付けて構成されている。コネクタ３２は
、透明電極２５と電気的に接続され外周部に雄ねじを形
成した係合部３４、系合部３４内に絶縁部材３Ｇを介し
て支持され受光素子３０の金属型ｌ４Ｊ２９に接続され
たジｊｒツク部３８とから形成されている。従って、本
実施例にＪ：れば、第１実施例と同様の効果を秦する他
、プラグ４０をこのコネクタ３２にフリーナラ１へ４１
によって容易に着脱づることができ、光検出装置ど電子
機器との接続のｌｌ！！ｌ易化を図ることができる。As shown in FIG. 6, the optical detection device with a connector of the third embodiment has a transparent Ni electrode 25 on the end face of the optical fiber 21, as in the first embodiment. A light receiving element 3o made of an amorphous silicon layer 27 and a metal electrode 29 is provided, and a goconnector 32 is further integrally assembled thereto. The connector 32 includes an engaging part 34 that is electrically connected to the transparent electrode 25 and has a male screw formed on the outer periphery, and is supported within the connecting part 34 via an insulating member 3G and connected to the metal type l4J29 of the light receiving element 30. It is formed from a jack portion 38. Therefore, if J: is used in this embodiment, in addition to achieving the same effect as in the first embodiment, the plug 40 is connected to this connector 32 and the free connector 1 is connected to the connector 41.
It can be easily attached and detached, and can be connected to photodetectors and other electronic devices! ! It can be made easier.
更に、光ファイバを多数束ねて用いるイメージガイドや
ファイバハンドル等に本発明を適用することらでさる。Furthermore, the present invention can be applied to image guides, fiber handles, etc. that use a large number of bundled optical fibers.
第７図は、イメージガイドに応用した実施例を示ず断面
図である。図示する如く、本実施例では、個々に被覆５
１ｃを有する光ファイバ５１を多数束ねてイメージガイ
ドを形成するが、これらの光ファイバ５１の端面ば揃え
られて鎖部加工されている。この上に、まず透明電極５
５を多数の光ファイバ５１に亘って直１＆形成づる。FIG. 7 is a cross-sectional view, not showing an embodiment applied to an image guide. As shown in the figure, in this embodiment, the coating 5 is individually coated.
An image guide is formed by bundling a large number of optical fibers 51 having 1c, and the end faces of these optical fibers 51 are aligned and chained. On top of this, first transparent electrode 5
5 is directly connected and formed over a large number of optical fibers 51.
この結果、透明電極５５は多数の光ファイバ５１に対し
て」１通電極となる。次に、この透明電極５５上に、光
ファイバ５１の端面の位置を除く位置をマスクづるマス
キングパターンを布置し、プラズマＣＶＤににす、ｐ−
１−ｎ接合を右づるアモルファスシリコン層５７を成長
さ゛せる。更に、金属電極５９をアモルファスシリコン
層５７十に形成してからマスキングパターンを除去すれ
ば、アモルファスシリコン層５７と金属電極５９とは、
光フアイバ５１毎に受光素子６０として形成されたこと
になる。As a result, the transparent electrode 55 becomes a single electrode for a large number of optical fibers 51. Next, a masking pattern is placed on the transparent electrode 55 to mask positions other than the end face of the optical fiber 51, and a p-
An amorphous silicon layer 57 is grown to the right of the 1-n junction. Furthermore, if the masking pattern is removed after the metal electrode 59 is formed on the amorphous silicon layer 570, the amorphous silicon layer 57 and the metal electrode 59 are
This means that a light receiving element 60 is formed for each optical fiber 51.
従って、イメージガイドとして、光フアイバ５１群の一
喘に成立した光学像を光ファイバ５１１σにｍ子化され
た電気信号に容易に変換することかできる。しかも、本
実施例のイメージガイドは、光フアイバ５１毎に光軸あ
わせ等を行なう必要がなく、製造工数、コストを格段に
低減しえる上、光軸のばらつぎによる検出効率の不揃い
を生じることがないので、その調整等も簡略化すること
がでさる。Therefore, as an image guide, it is possible to easily convert an optical image formed in one part of the group of optical fibers 51 into an electrical signal converted into m-converters in the optical fiber 511σ. Moreover, the image guide of this embodiment does not require alignment of the optical axis for each optical fiber 51, which can significantly reduce manufacturing man-hours and costs, and eliminates the possibility of uneven detection efficiency due to variations in the optical axes. Since there is no adjustment, the adjustment etc. can be simplified.
以上、本発明の幾つかの実施例について説明したが本発
明はこれらの実施例に同等限定されるものではなく、被
覆のない光フフイバを用いた構成や受光素子をｐ−１−
ｎもしくはアバランシェホトダイオードとして形成した
り、あるいはプラズマＣＶＤ以外のＣＶＤ′！Ａ置やス
パッタリング蒸着等の薄膜形成手段により形成するなど
、本発明の要旨を変更しない範囲において種々なる態様
で大施しえることは勿論である。Although several embodiments of the present invention have been described above, the present invention is not limited to these embodiments.
n or formed as an avalanche photodiode, or by CVD other than plasma CVD'! Of course, it can be applied in various ways without departing from the gist of the present invention, such as by forming by a thin film forming means such as A-position or sputtering vapor deposition.
発明の効果
以上詳）ホしたように、本発明の光検出装置にＪ：れば
、光フアイバ中を伝送された光を総て受光素子に）９く
ことができるので、光の検出を高い効率で行なうことが
できるという極めて門れた効果を秦覆る。また、光軸調
整の必要がなり、ＷｙＪ造工数。Effects of the Invention As mentioned above, if the photodetection device of the present invention is used, all the light transmitted through the optical fiber can be transmitted to the light receiving element, so that the light detection can be performed at high speed. Qin overturns the extremely effective effect of being able to do it efficiently. In addition, optical axis adjustment is required, which increases the man-hours required for WyJ construction.
コストの低減を図ることができる上、小型を図ることが
でき、光軸ずれを１しないため光検出装置の信頼性を一
層向トさせることもできる。更に、九ファイバ」に受光
素子を直接形成しているので、塵埃等の使用環境の影響
を災けることもなく、光検出の再現性し良好どなる。In addition to being able to reduce costs, it is also possible to achieve a smaller size, and since optical axis deviation is prevented by 1, the reliability of the photodetecting device can be further improved. Furthermore, since the light-receiving element is directly formed on the 9-fiber, it is not affected by the usage environment such as dust, and the reproducibility of light detection is excellent.
第１図は本発明第１実施例どしての光検出装置の構造を
示す断面図、第２図は第１実施例の変形例を示り゛断面
図、第３図は本発明の第２実施例としての光検出装Ｕの
構造を示す断面図、第４図。
第５図（Δ）、（Ｂ）は各々第２実施例の変形例を示す
概略構成図、第６図は本発明第３実施例としてのコネク
タ付き光検出装置の構造をプラグと共に示す断面図、第
７図は本発明第４実施例としてのイメージガイドの構成
を示す概略構成図、である。
１・・・光ファイバ ３・・・受光素子５・・・透
明電極FIG. 1 is a cross-sectional view showing the structure of a photodetecting device according to the first embodiment of the present invention, FIG. 2 is a cross-sectional view showing a modification of the first embodiment, and FIG. FIG. 4 is a sectional view showing the structure of a photodetector U as a second embodiment. 5(Δ) and (B) are schematic configuration diagrams showing modifications of the second embodiment, respectively, and FIG. 6 is a sectional view showing the structure of a photodetecting device with a connector as a third embodiment of the present invention together with a plug. , FIG. 7 is a schematic configuration diagram showing the configuration of an image guide as a fourth embodiment of the present invention. 1... Optical fiber 3... Light receiving element 5... Transparent electrode
Claims (1)
イバの一端面に直接形成され、該光ファイバを透過して
きた光の強度を検出する受光素子と、 からなる光検出装置。 ２ 前記受光素子は、前記光ファイバー端面に直接形成
された透明電極と、入射する光の強度に応じて電気的特
性が変化する半導体と、該半導体の電気的特性の変化を
前記透明電極と共に取り出す電極と、を積層して形成さ
れた特許請求の範囲第１項記載の光検出装置。 ３ 前記光ファイバは複数の光導波路からなるマルチフ
ァイバであり、 前記受光素子は、前記透明電極を複数の光導波路に対し
て共通に形成し、前記半導体と前記電極とは前記複数の
光導波路毎に形成した特許請求の範囲第２項記載の光検
出装置。 ４ 前記受光素子は、前記光ファイバー端面に直接設け
られた光導電層と、該光導電層上に離間して設けられた
２つの電極とから構成された特許請求の範囲第１項記載
の光検出装置。[Scope of Claims] 1. A photodetection device comprising: an optical fiber formed as an optical waveguide; and a light receiving element formed directly on one end surface of the optical fiber to detect the intensity of light transmitted through the optical fiber. . 2. The light receiving element includes a transparent electrode formed directly on the end face of the optical fiber, a semiconductor whose electrical characteristics change depending on the intensity of incident light, and an electrode that extracts changes in the electrical characteristics of the semiconductor together with the transparent electrode. The photodetecting device according to claim 1, which is formed by laminating the above. 3. The optical fiber is a multi-fiber consisting of a plurality of optical waveguides, and the light receiving element has the transparent electrode formed in common for the plurality of optical waveguides, and the semiconductor and the electrode are formed for each of the plurality of optical waveguides. A photodetecting device according to claim 2, which is formed as follows. 4. The photodetector according to claim 1, wherein the light receiving element is comprised of a photoconductive layer provided directly on the end face of the optical fiber, and two electrodes provided spaced apart on the photoconductive layer. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3681886A JPS62195610A (en) | 1986-02-21 | 1986-02-21 | Photodetecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3681886A JPS62195610A (en) | 1986-02-21 | 1986-02-21 | Photodetecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62195610A true JPS62195610A (en) | 1987-08-28 |
Family
ID=12480339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3681886A Pending JPS62195610A (en) | 1986-02-21 | 1986-02-21 | Photodetecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62195610A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0968410A1 (en) * | 1997-03-20 | 2000-01-05 | Hartford Hospital | Method and apparatus for evaluating the performance characteristics of endoscopes |
| JP2007017810A (en) * | 2005-07-08 | 2007-01-25 | National Institute Of Advanced Industrial & Technology | Structure for connecting optical element-attached optical fiber with coaxial electric wiring |
| JP2008128636A (en) * | 2006-11-16 | 2008-06-05 | Nichia Chem Ind Ltd | Light-emitting device |
-
1986
- 1986-02-21 JP JP3681886A patent/JPS62195610A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0968410A1 (en) * | 1997-03-20 | 2000-01-05 | Hartford Hospital | Method and apparatus for evaluating the performance characteristics of endoscopes |
| EP0968410A4 (en) * | 1997-03-20 | 2000-05-24 | Hartford Hospital | Method and apparatus for evaluating the performance characteristics of endoscopes |
| JP2007017810A (en) * | 2005-07-08 | 2007-01-25 | National Institute Of Advanced Industrial & Technology | Structure for connecting optical element-attached optical fiber with coaxial electric wiring |
| JP2008128636A (en) * | 2006-11-16 | 2008-06-05 | Nichia Chem Ind Ltd | Light-emitting device |
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