JPS62193126A - Method and apparatus for microwave plasma treatment - Google Patents
Method and apparatus for microwave plasma treatmentInfo
- Publication number
- JPS62193126A JPS62193126A JP3303386A JP3303386A JPS62193126A JP S62193126 A JPS62193126 A JP S62193126A JP 3303386 A JP3303386 A JP 3303386A JP 3303386 A JP3303386 A JP 3303386A JP S62193126 A JPS62193126 A JP S62193126A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- plasma
- high frequency
- sample stage
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract description 5
- 238000009832 plasma treatment Methods 0.000 title 1
- 238000003672 processing method Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract description 14
- 238000005530 etching Methods 0.000 abstract description 8
- 238000005513 bias potential Methods 0.000 abstract description 5
- 230000010355 oscillation Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はマイクロ波プラズマ処理方法および装置に係り
、特にプラズマ中のイオンによって固体表面のエツチン
グを行うのに好適なプラズマ処理方法および装置に関す
るものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a microwave plasma processing method and apparatus, and particularly to a plasma processing method and apparatus suitable for etching a solid surface using ions in plasma. It is.
従来の装置は、特公昭５６−３７３１１号に記載のよう
に、マイクロ波と磁場とを用いたプラズマ処理と、ｌ
Ｑ Ｑ ＫＨｚ〜１０ ＭＨｚの交流電圧を試料に印加
する手段とを併用して試料をエツチング処理するものが
あった。しかし、交流電圧に１０ＭＨｚ以上の高周波を
用いる点については考慮されていなかった。Conventional equipment uses plasma processing using microwaves and a magnetic field, as described in Japanese Patent Publication No. 56-37311, and l
There is a method for etching a sample using a method for applying an alternating current voltage of 10 MHz to 10 MHz to the sample. However, no consideration was given to the use of a high frequency of 10 MHz or higher for the alternating current voltage.
０発明が解決しようとする問題点〕
上記従来技術は、１０Ｍ）ｈ以上の周波数の交流電圧を
用いたものについては考慮されておらず、実際には電波
法および工業技術の制約により、４００ ＫＨｚまたは
３ Ｑ Ｑ ＫＨｚの低周波域の発振源しか用いること
ができず、さらにエツチング速度を向上させる上で限界
があるという問題があった。0 Problems to be Solved by the Invention] The above-mentioned conventional technology does not take into consideration those using AC voltage with a frequency of 10 M)h or higher, and in reality, due to the restrictions of the Radio Law and industrial technology, the AC voltage of 400 KHz is not considered. Alternatively, only an oscillation source in a low frequency range of 3 Q Q KHz can be used, and furthermore, there is a problem that there is a limit to improving the etching speed.
本発明の目的は、エツチング速度を向上させ、さらに優
れた加工特性を得ることのできるマイクロ波プラズマ処
理方法および装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a microwave plasma processing method and apparatus that can improve etching speed and provide even better processing characteristics.
上記目的は、１００ ＫＨｚ 〜１０ ＭＨｚ ｃＤ低
周波域をｌ Ｑ ＭＨｚ以上の高周波域に変えて、試料
に交流電圧を印加することにより達成される。The above object is achieved by changing the 100 KHz to 10 MHz cD low frequency range to a high frequency range of lQ MHz or more and applying an alternating current voltage to the sample.
従来技術の低周波放電を用いた場合、高真空圧力中でマ
イクロ波によって励起された、処理ガスの原子や分子の
イオンは、交流電圧の周期が長いため移動距離が長くな
り、トラップされることなく試料に到達する。このとき
、低周波放電の電気力線が試料に垂直に作用しているの
であれば、イオンは試料に対し垂直に入射してくる確率
が高（なるが、電気力線が試料に垂直に作用していない
場合は試料に対する方向性をもたせることが困難となる
。When conventional low-frequency discharge is used, ions of atoms and molecules of the processing gas excited by microwaves in high vacuum pressure have a long travel distance due to the long period of the alternating current voltage, and can be trapped. reaching the sample without any problems. At this time, if the electric lines of force of the low-frequency discharge are acting perpendicularly to the sample, there is a high probability that the ions will be incident perpendicularly to the sample. If not, it will be difficult to provide directionality to the sample.
本発明のように例えば１３．５６ ＭＨｚのような高周
波放電を用いると、交流電圧の周期が短いためにイオン
の移動距離が短くなり、イオンがトラップされる。ここ
で、試料台と高周波発振源との間にブロッキングコンデ
ンサーを入れ、試料台をアース電位から浮かせた形にす
ると、上述のトラップ現象より、試料台に直流電位が定
常的に存在するようｊこなる。この直流電位（アース電
位に対し、マイナス側に滞電する）とプラズマ電位（正
電位）との差によって、試料近傍にイオンシースが形成
され、高周波放電の電気力線に係わりなく、イオンが試
料に対し垂直に入射するようになる。また、この電位差
により、イオンが運動エネルギーを得るため、試料の処
理速度が低周波放電を利用するのに比べ向上する。When a high frequency discharge such as 13.56 MHz is used as in the present invention, the period of the alternating current voltage is short, so the distance the ions travel becomes short, and the ions are trapped. If a blocking capacitor is inserted between the sample stage and the high-frequency oscillation source, and the sample stage is lifted from the ground potential, the trap phenomenon described above will cause a constant DC potential to exist on the sample stage. Become. Due to the difference between this DC potential (current is stored on the negative side with respect to the earth potential) and the plasma potential (positive potential), an ion sheath is formed near the sample, and ions are transferred to the sample regardless of the electric field lines of the high-frequency discharge. It becomes incident perpendicular to the Furthermore, because the ions gain kinetic energy due to this potential difference, the sample processing speed is improved compared to using low frequency discharge.
以下、本発明の一実施例を第１図と第２図とにより説明
する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第１図において、真空容器であるプラズマ室１内には、
試料３を配置する試料台２が設けである。In FIG. 1, inside the plasma chamber 1, which is a vacuum container, there are
A sample stage 2 on which a sample 3 is placed is provided.
試料台２には、コンデンサ４を介して交流電圧を印加す
る手段である高周波電源５が接続されている。高周波電
源５は、例えば１３．５６ ＭＨｚの高周波を発振する
。高周波電源５の他方は、アースされている。試料台２
の周辺には、アース電極６が設けられている。アース電
極６はアースされている。試料台２の試料面に対向する
側には、プラズマ室１の端部１ａを囲むように導波管７
が設けである。導波管７の端部にはマイクロ波発信源８
が取り付けである。マイクロ波発信源８には、直流電源
９が接続されている。マイクロ波発振源８は、例えば２
．４５ ＧＨｚのマイクロ波を発振する。プラズマ室１
の端部１ａ周辺には、導波管７を介して磁場発生手段で
ある磁石１０が設けである。プラズマ室１の端部１ａ付
近には、図示しないガス供給装置からプラズマ室１の端
部１ａに処理ガスを導入するガス導入口１２が設けであ
る。プラズマ室１の端部１ａの反対側には、図示しない
排気装置に継ながる排気口が設けである。A high frequency power source 5, which is a means for applying an alternating current voltage, is connected to the sample stage 2 via a capacitor 4. The high frequency power supply 5 oscillates a high frequency of 13.56 MHz, for example. The other end of the high frequency power source 5 is grounded. Sample stand 2
A ground electrode 6 is provided around the . The ground electrode 6 is grounded. A waveguide 7 is provided on the side of the sample stage 2 facing the sample surface so as to surround the end 1a of the plasma chamber 1.
is the provision. A microwave source 8 is located at the end of the waveguide 7.
is the installation. A DC power supply 9 is connected to the microwave oscillation source 8 . The microwave oscillation source 8 is, for example, 2
．． It oscillates microwaves at 45 GHz. plasma chamber 1
A magnet 10, which is a magnetic field generating means, is provided around the end 1a of the waveguide 7 via a waveguide 7. A gas inlet 12 is provided near the end 1a of the plasma chamber 1 for introducing a processing gas into the end 1a of the plasma chamber 1 from a gas supply device (not shown). An exhaust port connected to an exhaust device (not shown) is provided on the opposite side of the end 1a of the plasma chamber 1.
上記構成により、プラズマ室１の端部１ａｌこ処理ガス
を供給し、プラズマ室１を所定圧力に減圧排気した状態
で、マイクロ波発振源８からマイクロ波を発振する。マ
イクロ波は導波管７に導かれてプラズマ室１の端部１ａ
を透過して端部１ａに入る。端部１ａ内の処理ガスは、
マイクロ波によって励起される。この時、磁石１０によ
って端部１ａ内に磁場を発生させ、より強いプラズマを
発生させるとともに、磁場の制御によってプラズマを試
料３の方へ輸送する。試料台２に高周波電圧を印加する
ことによって、試料３の近傍に輸送されてきたプラズマ
に高周波放電を発生させ、試料台２にバイアス電位を生
成させる。試料台２のバイアス電位により高周波放電に
よるプラズマ中のイオンが試料３に垂直に入射して、試
料３がエツチングされる。With the above configuration, the processing gas is supplied to the end portion 1al of the plasma chamber 1, and the microwave oscillation source 8 oscillates microwaves while the plasma chamber 1 is depressurized and evacuated to a predetermined pressure. The microwave is guided to the waveguide 7 and reaches the end 1a of the plasma chamber 1.
and enters the end portion 1a. The processing gas in the end portion 1a is
Excited by microwaves. At this time, a magnetic field is generated within the end portion 1a by the magnet 10 to generate stronger plasma, and the plasma is transported toward the sample 3 by controlling the magnetic field. By applying a high frequency voltage to the sample stage 2, a high frequency discharge is generated in the plasma transported near the sample 3, and a bias potential is generated on the sample stage 2. Due to the bias potential of the sample stage 2, ions in the plasma caused by high-frequency discharge are perpendicularly incident on the sample 3, and the sample 3 is etched.
また、高周波電源５の電力を制御することによって、試
料台２のバイアス電位を制御してマイクロ波および磁場
の作用によって生成したプラズマとは無関係に、プラズ
マ中のイオンエネルギーを制御できる。Furthermore, by controlling the power of the high-frequency power source 5, the bias potential of the sample stage 2 can be controlled, and the ion energy in the plasma can be controlled independently of the plasma generated by the action of microwaves and magnetic fields.
第２図に、処理ガスとしてＳＦ６．ガス圧力を５．２Ｘ
１０ Ｐａ、 フィクロ波電力を２５０Ｗとした条件
で、各周波数の交流電圧を試料台２に印加した場合の全
印加電圧ｖｐｐと自己バイアス電圧Ｖｄｃとの関係を示
す。In FIG. 2, SF6. Gas pressure 5.2X
The relationship between the total applied voltage vpp and the self-bias voltage Vdc is shown when an AC voltage of each frequency is applied to the sample stage 2 under the conditions that the fibrous wave power is 10 Pa and 250 W.
第２図によれば、全印加電圧Ｖｌ）ｌ）が大きくなるに
従い、自己バイアス電圧Ｖｄｃも大きくなっている。ま
た、同一全印加電圧Ｖｐｐに対して、周波数が高くなる
につれて自己バイアス電圧Ｖｄｃも大きくなっている。According to FIG. 2, as the total applied voltage Vl)l) increases, the self-bias voltage Vdc also increases. Further, for the same total applied voltage Vpp, as the frequency becomes higher, the self-bias voltage Vdc also becomes larger.
すなわち、低周波である１ ０ ＭＨｚに比べて高周波
である１３．５６ ＭＨｚの方が、同一全印加電圧ｖｌ
）ｐｌこ対して自己バイアス電圧Ｖｄｃが大きい。In other words, compared to the low frequency of 10 MHz, the high frequency of 13.56 MHz has the same total applied voltage vl.
) pl, the self-bias voltage Vdc is larger.
以上、本−実施例によれば、低周波である１０ＭＨｚ以
上の高周波を用いることにより、同一全印加電圧ｖｐｐ
に対し自己バイアス電圧Ｖｄｃを大きくすることができ
、それだけ、イオンを加速するためのエネルギーが大き
くなり、エツチング速度を向上させることができる。逆
に、小さい入力電力でイオンの加速を制御できる。As described above, according to this embodiment, by using a high frequency of 10 MHz or more, which is a low frequency, the same total applied voltage vpp
In contrast, the self-bias voltage Vdc can be increased, and the energy for accelerating ions increases accordingly, making it possible to improve the etching rate. Conversely, ion acceleration can be controlled with small input power.
また、工業上は、８００ ＫＨｚや１０ ＭＨｚ等の低
周波発振器は一般に市販されておらず、高周波発振器で
は１３．５６ ＭＨｚのものが市販されており、１３、
５６ ＭＨｚの高周波発振器の方が機器コストが安い。In addition, from an industrial perspective, low frequency oscillators such as 800 KHz and 10 MHz are generally not commercially available, but high frequency oscillators with a frequency of 13.56 MHz are commercially available.
The equipment cost of a 56 MHz high frequency oscillator is lower.
したがって１３．５６ ＭＨｚの高周波発振器を用いれ
ば、１０ ＭＨｚ以下の低周波発振器に比べて、イオン
の制御性が向上し、かつ装置が安価にできる。Therefore, if a high frequency oscillator of 13.56 MHz is used, ion controllability is improved and the device can be made at a lower cost than a low frequency oscillator of 10 MHz or less.
なお、本−実施例は、プラズマ化手段に電子サイクロト
ロン共鳴（ＥＣＲ）放電を用いた装置について記載した
が、プラズマ化手段にマイクロ波放電を用いたものでも
同様の効果がある。Although this embodiment has described an apparatus using electron cyclotron resonance (ECR) discharge as the plasma generation means, a similar effect can be obtained using a microwave discharge as the plasma generation means.
本発明によれば、試料台に周波数１０ＭＨｚ以上の高周
派電圧印加すること蓄こより、エツチング速度を向上さ
せ、さらに優れた加工特性を得ることができるという効
果がある。According to the present invention, by applying and storing a high-frequency voltage with a frequency of 10 MHz or more to the sample stage, the etching speed can be improved and even better processing characteristics can be obtained.
第１図は本発明の一実施例であるマイクロ波プラズマ処
理装置を示す縦断面図、第２図は全印加電圧と自己バイ
アス電圧の関係を示す図である。
１・・・・・・プラズマ室 ２・・・・・・試料台
４・・・・・・コンデンサ ５・・・・・・高周波
発振器）
フ
￥１図
／−−−−−７°うにマ堅
２−−−−一試粁台
ａ −一一一マイ２０３庚ｉ【拐鯵京ｌθ−−−−忌
もFIG. 1 is a longitudinal sectional view showing a microwave plasma processing apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between the total applied voltage and the self-bias voltage. 1... Plasma chamber 2... Sample stage 4... Capacitor 5... High frequency oscillator) Ken 2----Ichitsukadai a - 111 Mai 203庚i
Claims (1)
マ化する工程と、前記真空容器内の試料台に配置された
試料を前記プラズマにより処理する工程と、前記試料台
に周波数１０ＭＨｚ以上の高周波電圧を印加する工程と
を有することを特徴とするマイクロ波プラズマ処理方法
。 ２、真空容器と、該真空容器内に処理ガスを供給する手
段と、前記真空容器内を所定圧力に減圧排気する排気手
段と、前記真空容器内の処理ガスをプラズマ化する手段
と、前記真空容器内に設けられ試料を支持する試料台と
、該試料台に周波数１０ＭＨｚ以上の高周波電圧を印加
する高周波電圧印加手段とから成ることを特徴とするマ
イクロ波プラズマ処理装置。[Claims] 1. A step of introducing a processing gas into a vacuum container and turning the processing gas into plasma, a step of treating a sample placed on a sample stage in the vacuum container with the plasma, and a step of treating the sample with the plasma. A microwave plasma processing method characterized by comprising the step of applying a high frequency voltage with a frequency of 10 MHz or more to the stage. 2. A vacuum container, a means for supplying a processing gas into the vacuum container, an evacuation means for reducing and exhausting the inside of the vacuum container to a predetermined pressure, a means for turning the processing gas in the vacuum container into plasma, and the vacuum A microwave plasma processing apparatus comprising: a sample stage provided in a container to support a sample; and a high-frequency voltage applying means for applying a high-frequency voltage with a frequency of 10 MHz or higher to the sample stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61033033A JPH0831438B2 (en) | 1986-02-19 | 1986-02-19 | Microwave plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61033033A JPH0831438B2 (en) | 1986-02-19 | 1986-02-19 | Microwave plasma processing equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6199672A Division JP2629610B2 (en) | 1994-08-24 | 1994-08-24 | Microwave plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62193126A true JPS62193126A (en) | 1987-08-25 |
| JPH0831438B2 JPH0831438B2 (en) | 1996-03-27 |
Family
ID=12375480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61033033A Expired - Lifetime JPH0831438B2 (en) | 1986-02-19 | 1986-02-19 | Microwave plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831438B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0421430A2 (en) † | 1989-10-03 | 1991-04-10 | Applied Materials, Inc. | A plasma process, method and apparatus |
| US5759922A (en) * | 1993-08-25 | 1998-06-02 | Micron Technology, Inc. | Control of etch profiles during extended overetch |
| KR100339813B1 (en) * | 1999-12-16 | 2002-06-07 | 김덕중 | Atmospheric Plasma System Using High Frequency Source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637311A (en) * | 1979-08-27 | 1981-04-11 | Kanebo Ltd | Polyester fiber for woven and knitted fabric |
| JPS57164986A (en) * | 1982-02-26 | 1982-10-09 | Hitachi Ltd | Microwave plasma etching device |
-
1986
- 1986-02-19 JP JP61033033A patent/JPH0831438B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637311A (en) * | 1979-08-27 | 1981-04-11 | Kanebo Ltd | Polyester fiber for woven and knitted fabric |
| JPS57164986A (en) * | 1982-02-26 | 1982-10-09 | Hitachi Ltd | Microwave plasma etching device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0421430A2 (en) † | 1989-10-03 | 1991-04-10 | Applied Materials, Inc. | A plasma process, method and apparatus |
| EP0421430B2 (en) † | 1989-10-03 | 2003-12-10 | Applied Materials, Inc. | A plasma process, method and apparatus |
| US5759922A (en) * | 1993-08-25 | 1998-06-02 | Micron Technology, Inc. | Control of etch profiles during extended overetch |
| KR100339813B1 (en) * | 1999-12-16 | 2002-06-07 | 김덕중 | Atmospheric Plasma System Using High Frequency Source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0831438B2 (en) | 1996-03-27 |
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|---|---|---|---|
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