JPS62188233A - Semiconductor bonding unit - Google Patents

Semiconductor bonding unit

Info

Publication number
JPS62188233A
JPS62188233A JP61029518A JP2951886A JPS62188233A JP S62188233 A JPS62188233 A JP S62188233A JP 61029518 A JP61029518 A JP 61029518A JP 2951886 A JP2951886 A JP 2951886A JP S62188233 A JPS62188233 A JP S62188233A
Authority
JP
Japan
Prior art keywords
bonding
laser
semiconductor
temperature
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61029518A
Other languages
Japanese (ja)
Inventor
Takashi Ebisawa
海老沢　隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Matsushima Kogyo KK
Original Assignee
Matsushima Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushima Kogyo KK filed Critical Matsushima Kogyo KK
Priority to JP61029518A priority Critical patent/JPS62188233A/en
Publication of JPS62188233A publication Critical patent/JPS62188233A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78261—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable a bonding unit to form good bonds with desirable strength and reliability even on a heat-resisting substrate, by applying laser beams to a bonding section for heating it directly. CONSTITUTION:A laser generating apparatus 30, which is a YAG laser in this embodiment, is provided so as to apply a laser beam to each of bonding pads on a semiconductor 61. Further, a temperature detecting apparatus 40 is provided for detecting a temperature of the region of the bonding pad to which the laser beam has been applied. The temperature detecting apparatus 40 is composed of a infrared radiation generating section for applying infrared rays to the that region to which the laser beam has been applied and of a temperature detecting element formed of In-Sb for receiving the infrared rays reflected therefrom. A television camera 20, the laser generating apparatus 30, the temperature detecting apparatus 40 and a body 10 are all connected to a control unit 50 so that, for example, an output of the laser generating apparatus 30 is controlled based on a temperature detected by the temperature detecting apparatus 40 or a bonding head is positioned reciprocally or transversely according to the position of the bonding pad recognized by the television camera 20.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体のボンディングパッドと半導体を固定
しｔＴｔ板上の接続端子と？　ｋｑｔ、　Ａｔ、−など
の極細線で接続する半導体ボンディング装置に間するも
のである。[Detailed Description of the Invention] [Industrial Field of Application] The present invention is directed to bonding pads of semiconductors and connecting terminals on a tTt board by fixing semiconductor bonding pads and semiconductors. It is used in semiconductor bonding equipment that connects with ultrafine wires such as kqt, At, and -.

〔発明の概要〕[Summary of the invention]

本発明は半導体ボンディング装置尾おいて、半導体のポ
ンディングパシドｆレーザ光を照射することにより基板
自体を高温に加熱することなく半導体と基板とを確実に
ポンディングな行なえるよさにしたものである。The present invention is a semiconductor bonding apparatus that is capable of reliably bonding a semiconductor and a substrate by irradiating the semiconductor with a bonding passive f laser beam without heating the substrate itself to a high temperature. be.

〔従来技術〕[Prior art]

従来の半導体ポンディング装置としては１図示はしてい
ｒｃいｈｔ基板の惺持をするテーブル部および、Ａｕ、
　ｋｔ、　（ｍなどの極細線を半導体のボンデイングパ
ッドや基板端子に押圧するキャピラリーな前後、左右、
上下方向如移動可能で、さらＫＮ細線の先端にポールな
形成させるボール形成用トーチシ具備しｔボンディング
ヘッドが設けられている。まｔ、このポンディングヘッ
ドには超音波発生器が設けられキャピラリーに超音波が
伝達されるようＫｌ成されている。そして基板の下には
ヒータブロックが具備され基板および半導体？加熱する
よ）になって（八る。さらに、この装置にはＴＶカメラ
ｈ”−設けられ半導体のボンディングパッドや基板の端
子部Ｉｋ−認識できるように構成されている。A conventional semiconductor bonding device includes a table portion (not shown) for holding an RC substrate, an Au,
kt, (m) and other capillary wires that press ultrafine wires to semiconductor bonding pads and board terminals, front and back, left and right,
A bonding head is provided which is movable in the vertical direction and is equipped with a torch for forming a ball at the tip of the KN thin wire. Also, this pumping head is provided with an ultrasonic generator and configured to transmit ultrasonic waves to the capillary. And a heater block is provided under the substrate, and is the substrate and semiconductor? Further, this device is equipped with a TV camera (h'') and is configured to be able to recognize the semiconductor bonding pads and the terminal portions (Ik) of the substrate.

次に従来の半導体ポンディング装置のポンディング方法
な填２図れ）〜ω）にて説明する。Next, a bonding method using a conventional semiconductor bonding apparatus will be explained in Figures 2) to ω).

セラミックやルビーで形成され次キャピラリー１に４２
５〜５０μｍのＡｔ４線２（ま之けｋｔ、Ｏｕ、線）が
通されている。千ヤピラリ−１の先端ａｓ　＠　２は放
電アークによるボール形成用トーチ３により溶融されポ
ールが形成される（第２図し））。次に千ヤピラリ−１
が降下し基板６１Ｃ固定された半導体４、のＭ蒸着ボン
ディングパッド５の上にポールシ所定加圧力により一定
時間圧着する。このとき、超音波ｈ；キャピラリー１に
印加され總線２と半導体４のポンデイングパツド５との
第１接合ｈｔなされる。この際、半導体４け基板６の下
に看かれｔヒータブロック８により２００〜３００℃に
加熱されている。次にキャビラリ−１を引き上げ（第２
図（ｂ））同時にキャビラリ−１が基板６の端子部７へ
移動し、この總メッキが施され几端子部７に第２接合が
なされる（第２図（Ｃ））。このときにも超音波が印加
されている。そして、千ヤピラリー１が引き上げられＡ
ｓ線１が切られて接合が完了する（第２図３）。42 to the next capillary 1 made of ceramic or ruby
A 5-50 μm At4 wire 2 (manoke kt, Ou, wire) is passed through. The tip as@2 of the thousand pillars 1 is melted by a ball forming torch 3 using a discharge arc to form a pole (FIG. 2)). Next, Senya Pillarry-1
is lowered and pressed onto the M-deposited bonding pad 5 of the semiconductor 4 fixed to the substrate 61C for a certain period of time using a predetermined pressing force. At this time, an ultrasonic wave h is applied to the capillary 1 to form a first bond ht between the wire 2 and the bonding pad 5 of the semiconductor 4. At this time, the four semiconductor substrates 6 are heated to 200 to 300° C. by a heater block 8 located below them. Next, pull up cavity 1 (second
(FIG. 2(B)) At the same time, the cavity 1 is moved to the terminal portion 7 of the substrate 6, and this plating is applied and a second bond is made to the terminal portion 7 (FIG. 2(C)). Ultrasonic waves are also applied at this time. Then, Senya Pillarry 1 was pulled up and A
The S-line 1 is cut to complete the bonding (Fig. 2, 3).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかじな／Ｉｔら、上記従来の半導体ボンディング装置
では半導体を加熱するのに基板の下よりヒータブロック
で加熱する之め、ガラスエポキシ基板などの４１１脂基
板？用い几場合には、基板の耐熱性の関係から１５０℃
前後の温度でしか設定できないという問題を生じている
。さらＫ、樹脂基板の場合には熱伝導性が悪い念め、基
板の下からヒータブロックで加熱しても半導体のボンデ
ィングパッドや基板端子ｈｚ　ｐｆｒ宇の温度に加熱さ
れるのに時間ｈ＝かかるといへ欠点があり、ま友、一つ
の半導体の中で最初のポンディ・／グ温度と滞後のポン
ディング温度に差が生じている。このため、ポンディン
グ弾変及び信頼性の低下、ま之ポンディングサイクルタ
イムの長時間化なひき起し、ている。そこで、本発明は
上記問題点？解決するものでその目的とするところは、
ボンディング部？瞬時に適切な温＃（約２５０℃〜３０
０℃）に加熱でき、ポンディングの強度および償頼性シ
向上させる半導体ボンディング装置シ提供することにあ
る。Shikajina/It et al., In the conventional semiconductor bonding equipment mentioned above, a heater block is used from below the substrate to heat the semiconductor, so 411 fat substrates such as glass epoxy substrates are heated. When used, the temperature is 150℃ due to the heat resistance of the substrate.
The problem is that you can only set the temperature before or after. Furthermore, in the case of a resin substrate, it has poor thermal conductivity, so even if you heat it from below with a heater block, it will take a long time to heat it to the temperature of the semiconductor bonding pad or board terminal. However, there is a drawback: within a single semiconductor, there is a difference between the initial bonding temperature and the subsequent bonding temperature. As a result, the pounding bullet changes, reliability decreases, and the pounding cycle time becomes longer. So, does the present invention solve the above problems? The purpose of this solution is to
Bonding department? Instantly adjusts to the appropriate temperature (approximately 250℃~30℃
An object of the present invention is to provide a semiconductor bonding device which can be heated to 0° C.) and which improves bonding strength and reliability.

〔問題？解決する定めの手段〕〔problem? Predetermined means to solve the problem]

大発明は、半導体のポンディングパツドと半導体を固定
し友、基板上の端子とをＡｙｌ、　、　　Ａｔ、　　Ｃ
ｕなどの揮細線で接続する半導体ボンディング装置Ｋｆ
、＞いて、半導体のボンディングパッドおよび、基板端
子位置とシ認識する認識装置と認識装置により認識され
た半導体のボンディングパッド、および基板端子位置に
レーザ光？照射可能なレーザ発生装置と、レーザ発生装
置によりレーザ光な照射されｔ部分の温度を検出する温
度検出装置と、温度検出装置の温度検出によりレーザ発
生装置の出力を制御する制御装置と、＋ｔＩｔ加し几こ
とを特徴とする。The great invention is to fix the semiconductor bonding pad and the semiconductor and connect the terminals on the board with Ayl, , At, C.
Semiconductor bonding equipment Kf that connects with volatile wires such as u
A recognition device recognizes the semiconductor bonding pad and the board terminal position, and a laser beam is applied to the semiconductor bonding pad and the board terminal position recognized by the recognition device? A laser generating device capable of irradiating a laser beam, a temperature detecting device detecting the temperature of a portion t irradiated with a laser beam by the laser generating device, a control device controlling the output of the laser generating device by detecting the temperature of the temperature detecting device, and a +tIt addition. It is characterized by being sharp.

〔作用〕[Effect]

本発明の構成によれば、レーザ光によりポンディング部
？直接加熱することができる几め、耐熱性のない基板に
かいてもポンディングの強度と信頼性をもりｔボンディ
ングｔすることができる。According to the configuration of the present invention, the bonding portion is formed by a laser beam. Since it can be heated directly, bonding can be performed with high bonding strength and reliability even on substrates that are not heat resistant.

〔実施例〕〔Example〕

第１図は本発明の実施例における半導体ポンディング装
置の概略図である。FIG. 1 is a schematic diagram of a semiconductor bonding apparatus in an embodiment of the present invention.

半導体ポンディング装置の本体１ｏは基板６゜の保持を
するテーブル部１１およびキャピラ＋）−？前後、左右
、上下方向に移動可能でＡｔ４線などの先端にポールな
形成させるボール形成用トーチを具備し超音波発振源を
有するボンディングヘッド１２よりＷＩＩ成されている
。また、この半導体ボンディング装置にＶｉ認識装置と
してのＴＶカメラ２゜が設けられ半導体６１のボンディ
ングパッドや基板６０の端子部を認識できるようになっ
ている。The main body 1o of the semiconductor bonding device includes a table portion 11 for holding a substrate 6° and a capillary +)-? The bonding head 12 is made up of a bonding head 12 which is movable in the front-rear, left-right, and up-down directions and is equipped with a ball-forming torch for forming a pole at the tip of an At4 wire, etc., and has an ultrasonic oscillation source. Further, this semiconductor bonding apparatus is equipped with a TV camera 2° as a Vi recognition device so that the bonding pads of the semiconductor 61 and the terminal portions of the substrate 60 can be recognized.

さらに、半導体６１のひとつひとつのボンヂイングパ１
ドにレーザ光を照射するレーザ発生装Ｍ３０が設けられ
ている。ここではＹＡＧレーザがレーザ発生源として用
いられている。さらに、このレーザ光を照射し友部分の
温度？検出するために温間ゆ小装置ｔ４０が備えられて
いる。この温度＃吊装置ｔ４０はレーザ光な照射した同
位置に赤外線を照射する赤外線発生部と、その赤外線の
反射光？受光するＩｎ　−Ｂｂ　Ｋよる温度検出素子部
より構成されている。そして、ＴＶカメラ２０．レーザ
発生寝首５０．温度喰出装置４０、本体１０け制御装着
５０につなｈｚれ、友とえば淵度襖出装置４０による帰
山温度によりレーザ発生装着３０の出力が制御されたり
、Ｔｖカメラ２０による位置認識によりボンディングヘ
クト１２０前後左右方向の位置決めが制御される。Furthermore, each bonding pad 1 of the semiconductor 61 is
A laser generator M30 is provided to irradiate the laser beam with laser light. Here, a YAG laser is used as a laser source. Furthermore, what is the temperature of the friend part irradiated with this laser light? A warm damping device t40 is provided for detection. This temperature #hanging device t40 has an infrared generation part that irradiates infrared rays to the same position that is irradiated with laser light, and the reflected light of the infrared rays. It is composed of a temperature detection element section made of In-BbK that receives light. And TV camera 20. Laser generation neck 50. The temperature output device 40 is connected to the main body 10 control attachment 50, and the output of the laser generation attachment 30 is controlled by the return temperature by the fuchidori sliding device 40, for example, and the bonding is performed by position recognition by the TV camera 20. The positioning of the hect 120 in the front, rear, left and right directions is controlled.

以上説明しｔ本発明の半導体ポンディング装置な用い几
ボンディング方法なｆａ３図社）〜（−で説明する。As explained above, the semiconductor bonding apparatus and the bonding method of the present invention will be explained with - (-).

ガラスエポそシ基板６０Ｖｒは半導体６１ｂｔ固定され
ている。これからボンディングを行なへ半導体６１のボ
ンディングパッド６２にけレーザ発生装置３０から発生
されたレーザ光が照射されｔボンディングパッド６２Ｉ
？加熱する。このとを温度検出素子４１からは赤外線が
レーザ光？照射した同位置に照射されその反射光り−Ｉ
ｎ　−Ｂｂによる温度検出素子に入り温度が検出され、
図示してｂない制御装置にフィードバックされてレーザ
光発生装置３０の出力が制御される。そして、このボン
ディングパッド６２け設定した温度に保たれる。千ヤピ
ラリ−６３の先端のｋｕ線６４は放電７−りによるボー
ル形成用トーチ６５により溶融されボールが形成される
。まｔ、基板６０の下よりと一々ブロック６６により加
熱される。この加熱温度はガラスエポキシ基板の耐熱温
度以下の温度で約１５０℃である。このヒータブロック
６６による加熱は主に半導体６１のヒートシッツクシ和
らげる目的で行なう（第３図（ｃＬ）　）。A semiconductor 61bt is fixed to the glass epoxy substrate 60Vr. From now on, bonding is performed, and the bonding pad 62 of the semiconductor 61 is irradiated with the laser light generated from the laser generator 30.
? Heat. Is this infrared light from the temperature detection element 41 a laser beam? The reflected light is irradiated at the same location as the irradiation-I
The temperature is detected by the n-Bb temperature detection element,
The output of the laser beam generator 30 is controlled by being fed back to a control device (not shown). The temperature of these bonding pads 62 is maintained at the set temperature. The KU wire 64 at the tip of the thousand pillars 63 is melted by a ball forming torch 65 using an electric discharge 7 to form a ball. Also, the bottom of the substrate 60 is heated by the block 66. This heating temperature is about 150° C., which is lower than the heat resistance temperature of the glass epoxy substrate. This heating by the heater block 66 is performed mainly for the purpose of alleviating heat stress in the semiconductor 61 (FIG. 3(cL)).

次にキャピラリー６３が降下し振板６０に固定され定半
導体６１のＡｔ蒸着ポンデインダパヴド６２の七にボー
ルを所中加圧力により一定時間圧着する。このとｓ、ｍ
音波ｈＺ−ｓｐヤピ→リ−６３に印加されＡｓ　＠　（
、４と半導体６１のボンディングパッド６２との電１接
合４ｔなされる。その後、キャピラリー６３シ引き上げ
（＠３図（ｂ）　）　、同時ＶＣ−？　ヤピラ＋＋−６
ｓ　ｈ＝基板６０のＡＭメッキが施された端子部６７へ
移動し、この端子部に屓２接合Ｍ’−なされる（塩３図
（Ｃ））。このときにも超音波が印加され次にキャピラ
リー６３が引き上げられＡ’ｌ＆線６４ｈ；切られて接
合ｈ−完了する（５Ｅ３図（ｄ））。以下同様にして他
のボンディングパッドと基板の端子との接続ｈｔなされ
る。Next, the capillary 63 is lowered and fixed to the diaphragm 60, and the ball is pressed onto the At vapor deposited pad 62 of the constant semiconductor 61 for a certain period of time by applying pressure therein. This and s, m
The sound wave hZ-spYapi→Lee-63 is applied to As @ (
, 4 and the bonding pad 62 of the semiconductor 61 are electrically connected 4t. After that, capillary 63 is pulled up (@Figure 3 (b)), and simultaneous VC-? Yapira++-6
s h=moves to the AM-plated terminal portion 67 of the substrate 60, and performs a lateral bond M'- to this terminal portion (Fig. 3 (C)). At this time as well, ultrasonic waves are applied, and then the capillary 63 is pulled up and the A'l& line 64h is cut to complete the bonding (Fig. 5E3 (d)). Thereafter, other bonding pads and terminals of the substrate are connected in the same manner.

以上のよへに本発明の実施例では、半導体のボンディン
グパッド部にレーザ光を照射して加熱１行なっ７？Ｊ’
−、Ｘ板端子にも１ノ−ザ光を照射してもよい。また、
半導体のボンディングパッドと基板端子との両方にレー
ザ光を照射することもでき、この場合には２台のレーザ
発生装置と温度ゆ吊装置な具備することｈ；望ましい。As described above, in the embodiment of the present invention, the bonding pad portion of the semiconductor is irradiated with laser light and heated once. J'
- and X plate terminals may also be irradiated with one nose light. Also,
It is also possible to irradiate both the semiconductor bonding pad and the substrate terminal with laser light, and in this case, it is desirable to have two laser generators and a temperature adjustment device.

ま几１本健施例では樹脂基板としてガラスエポキシ樹脂
にて説明し次ｈ＝ポリイミド樹脂、ガラスポリイミド樹
脂などで屯よい。さらに、本発明ではボンディング部を
直接加熱して一定温度に採でる定め、セラミック基板や
４−２７０イ、銅系のメタルフレーム基板に卦いても信
頼性の向上するボンディングな行なうのに有効である。In the example, glass epoxy resin is used as the resin substrate, and then polyimide resin, glass polyimide resin, etc. may be used as the resin substrate. Furthermore, in the present invention, the bonding part is directly heated to a constant temperature, which is effective for bonding with improved reliability even on ceramic substrates, 4-270I, and copper-based metal frame substrates. .

また、ボンディング方法として本実施例ではボールボン
ディング法にて説明し７？：　ｈ′−ウェッジポンディ
ング法にても実施可能であり、極細線につｈてもＡｆ４
線以外Ｋ　Ａｔ線、Ｏ？Ｌｐｋ中いてもよい。In addition, as a bonding method, a ball bonding method will be explained in this embodiment. : It can also be carried out by the h'-wedge pounding method, and Af4 can also be applied to ultra-fine wires.
Other than line K At line, O? May be in Lpk.

さらに、レーザ光の発生源としてＹＡＧレーザな甲−几
が００２レーザな用いても実施可絆である。Furthermore, it is also possible to use a YAG laser or a 002 laser as the laser light source.

〔発明の効果〕〔Effect of the invention〕

以ヒ述べ次ように本発明によれば、レーザ光によりボン
ディング部を直接加熱することがで着るため、耐熱性の
ない樹脂基板においても良好な温度条件でポンディング
でき、ポンディング強度と信頼性な得ることができる。As described below, according to the present invention, since the bonding part is directly heated by laser light, bonding can be performed under favorable temperature conditions even on resin substrates that are not heat resistant, and bonding strength and reliability are improved. You can get it.

重比、瞬時にボンディング部を一定温度に保つことｈ”
＝できる定め従来に較べて一定温度φ件にてボンディン
グカー可能となり、ポンディング条件６”−安定しさら
にポンディングのサイクルタイムめ；速くなるという絶
大な効果な有する。The gravity ratio allows the bonding part to be maintained at a constant temperature instantly.
Compared to the conventional method, bonding is possible at a constant temperature φ, the bonding condition is stable at 6'', and the bonding cycle time is also faster.

【図面の簡単な説明】[Brief explanation of drawings]

′ｓ１図は本発明の一実施例を示す半導体ポンディング
装置の概略図。 第２図（α）〜（ｄは従来の半導体ボンディング装置ケ
用いたポンディング方法な示す説明図。 準３図（α）〜頓は本発明の半導体ポンディング装置の
ボ・／ディング方法を示す説明図。 ２０・・・・・・ＴＶカメう ３０・・・・・・レーザ発生＊ｅ ４０・・・・・・温度検出装置 ５０・・・・・・制御装置 ６０・・・・・・基板 ６１・・・・・・半導体 以　　上 ５Ｏ−−−−一制御装置 ６０−−−−−一基板 ６　／−−−一一手尋体 半導体ホ゛ン−”ｆ２ングｋＬ置の魁時図晃　１　目 第２図 ８３図Figure 's1 is a schematic diagram of a semiconductor bonding device showing an embodiment of the present invention. Figures 2 (α) to (d) are explanatory diagrams showing a bonding method using a conventional semiconductor bonding device. Figures 3 (α) to (d) illustrate a bonding method using a semiconductor bonding device of the present invention Explanatory diagram. 20...TV camera 30...Laser generation*e 40...Temperature detection device 50...Control device 60... Substrate 61...Semiconductor and above 5O-----1 control device 60-----1 substrate 6/---11-hand body semiconductor board-"Fig. 1. Figure 2. Figure 83.

Claims (2)

【特許請求の範囲】[Claims] （１）半導体のボンディングパッドと半導体を固定した
基板上の端子とをＡｕ、Ａｌ、Ｃｕなどの極細線で接続
する半導体ボンディング装置において、半導体のボンデ
ィングパツドおよび基板端子位置とを認識する認識装置
と、前記認識装置により認識された半導体のボンディン
グパッドおよび基板端子位置にレーザ光を照射可能なレ
ーザ発生装置と前記レーザ発生装置によりレーザ光を照
射された部分の温度を検出する温度検出装置と、前記温
度検出装置の温度検出により前記レーザ発生装置の出力
を制御する制御装置と、を付加したことを特徴とする半
導体ボンディング装置。(1) A recognition device that recognizes the positions of semiconductor bonding pads and substrate terminals in semiconductor bonding equipment that connects semiconductor bonding pads and terminals on a substrate to which the semiconductor is fixed using ultrafine wires such as Au, Al, Cu, etc. a laser generator capable of irradiating a semiconductor bonding pad and a substrate terminal position recognized by the recognition device with a laser beam; and a temperature detection device configured to detect the temperature of a portion irradiated with the laser beam by the laser generator; A semiconductor bonding apparatus further comprising: a control device that controls an output of the laser generator based on temperature detection of the temperature detection device. （２）レーザ発生装置によりレーザ光を照射された部分
の温度を検出する温度検出装置は、赤外線を照射可能な
赤外線発生部とＩｎ−Ｓｂによる温度検出素子部より構
成されたことを特徴とする特許請求の範囲第１項記載の
半導体ボンディング装置。(2) The temperature detection device for detecting the temperature of a portion irradiated with laser light by the laser generator is characterized by comprising an infrared generation section capable of irradiating infrared rays and a temperature detection element section made of In-Sb. A semiconductor bonding apparatus according to claim 1.
JP61029518A 1986-02-13 1986-02-13 Semiconductor bonding unit Pending JPS62188233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61029518A JPS62188233A (en) 1986-02-13 1986-02-13 Semiconductor bonding unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61029518A JPS62188233A (en) 1986-02-13 1986-02-13 Semiconductor bonding unit

Publications (1)

Publication Number Publication Date
JPS62188233A true JPS62188233A (en) 1987-08-17

Family

ID=12278321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61029518A Pending JPS62188233A (en) 1986-02-13 1986-02-13 Semiconductor bonding unit

Country Status (1)

Country Link
JP (1) JPS62188233A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232438A (en) * 1987-03-20 1988-09-28 Matsushita Electric Ind Co Ltd Wire bonding method
KR100294128B1 (en) * 1997-03-27 2001-08-07 가네꼬 히사시 Test method for a bonding pad on a semiconductor chip
JP2004503939A (en) * 2000-06-12 2004-02-05 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Solder bump and wire bonding by infrared heating
JP2007289836A (en) * 2006-04-24 2007-11-08 Seiko Epson Corp Pattern formation process, liquid droplet discharge apparatus and circuit module

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232438A (en) * 1987-03-20 1988-09-28 Matsushita Electric Ind Co Ltd Wire bonding method
KR100294128B1 (en) * 1997-03-27 2001-08-07 가네꼬 히사시 Test method for a bonding pad on a semiconductor chip
US6339337B1 (en) 1997-03-27 2002-01-15 Nec Corporation Method for inspecting semiconductor chip bonding pads using infrared rays
JP2004503939A (en) * 2000-06-12 2004-02-05 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Solder bump and wire bonding by infrared heating
JP2007289836A (en) * 2006-04-24 2007-11-08 Seiko Epson Corp Pattern formation process, liquid droplet discharge apparatus and circuit module

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