JPS62185246A - Production of magnetic recording medium - Google Patents
Production of magnetic recording mediumInfo
- Publication number
- JPS62185246A JPS62185246A JP2717586A JP2717586A JPS62185246A JP S62185246 A JPS62185246 A JP S62185246A JP 2717586 A JP2717586 A JP 2717586A JP 2717586 A JP2717586 A JP 2717586A JP S62185246 A JPS62185246 A JP S62185246A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxygen
- durability
- vapor deposition
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229920006254 polymer film Polymers 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 8
- 230000004907 flux Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 3
- 239000002120 nanofilm Substances 0.000 abstract 2
- 230000007774 longterm Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 32
- 230000005415 magnetization Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高密度磁気記録に適する強磁性金属薄膜を磁気
記録層とする磁気記録媒体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a magnetic recording medium having a magnetic recording layer made of a ferromagnetic metal thin film suitable for high-density magnetic recording.
従来の技術
短波長記録と狭トラツク記録による磁気記録の高密度化
の進歩は目覚しく、磁気記録層に対して垂直方向に磁化
する垂直磁気記録方式と、従来よシ広く実用に供されて
いるいわゆる長手記録方式のいずれも、強磁性金属薄膜
を磁気記録層とする磁気記録媒体の実用化が強く望まれ
ている。〔例えば、日本金属学会会報、第２４巻、第８
号。Conventional technology Progress in increasing the density of magnetic recording through short wavelength recording and narrow track recording has been remarkable. In any of the longitudinal recording methods, it is strongly desired to put into practical use magnetic recording media in which the magnetic recording layer is a ferromagnetic metal thin film. [For example, Bulletin of the Japan Institute of Metals, Vol. 24, No. 8
issue.
６４６〜６６２頁（１９８５））
強磁性金属薄膜の形成は、特性上は垂直磁化膜ではスパ
ッタ法が一歩優れているが、製膜速度に難点があり、電
子ビーム蒸着を基板を昇温させて行う方法で、Ｇｏ−Ｃ
ｒ垂直磁化膜を得るだめの研究が盛んである。〔例えば
、特開昭６９−２０１２３０号公報〕
一方、長手記録用としては、電子ビーム蒸着を斜め入射
で行う方法と、酸素ガス導入効果の利用が、磁気記録層
の実用化に最短距離にあって数多くの提案がなされてい
る。〔例えば１日本応用磁気学会誌、第７巻、第３号、
１９７〜２０１頁（１９８３）、特開昭６８−４１４４
２号公報。(pp. 646-662 (1985)) For forming ferromagnetic metal thin films, the sputtering method is one step superior in terms of characteristics for perpendicularly magnetized films, but it has a drawback in film formation speed, and electron beam evaporation is difficult to achieve by raising the temperature of the substrate. Go-C
There is active research into how to obtain r-perpendicularly magnetized films. [For example, JP-A No. 69-201230] On the other hand, for longitudinal recording, the method of performing electron beam evaporation with oblique incidence and the use of the oxygen gas introduction effect are the shortest path to practical use of magnetic recording layers. Many proposals have been made. [For example, 1 Journal of the Japan Society of Applied Magnetics, Vol. 7, No. 3,
pp. 197-201 (1983), JP-A-68-4144
Publication No. 2.
特開昭５１３−４１４４３号公報〕
第２図は、電子ビーム蒸着法で垂直磁化膜の形成を行う
だめの蒸着装置の一例で、第２図に於て、１はポリイミ
ド等の高分子フィルム１２は巻出し軸、３は巻取り軸、
４は円筒キャンで高温（１ｏ０°Ｃ〜２００’Ｃ）の媒
体循環路を内蔵したものが通常用いられている。５は蒸
着材料で、Ｇｏ−Ｇｒが通常用いられている。６は蒸発
源容器、７は電子ビーム発生器、８は電子ビーム、９は
蒸気流、１０はスリット、１１はマスク１１２は真空容
器。JP-A-513-41443] Fig. 2 shows an example of a vapor deposition apparatus for forming a perpendicularly magnetized film by electron beam evaporation. is the unwinding shaft, 3 is the winding shaft,
Reference numeral 4 denotes a cylindrical can having a built-in high temperature (1o0°C to 200'C) medium circulation path, which is usually used. 5 is a vapor deposition material, and Go-Gr is usually used. 6 is an evaporation source container, 7 is an electron beam generator, 8 is an electron beam, 9 is a vapor flow, 10 is a slit, 11 is a mask 112 is a vacuum container.
１３は真空排気系である。13 is a vacuum exhaust system.
第２図の装置で蒸気の入射角θＳ、θｅと１キヤンの表
面温度をコントロールすることで、垂直方向の保磁力の
異なるＧｏ−Ｃｒ膜を形成することが知られている。Ｇ
ｏ−Ｃｒ垂直磁化膜の形成時には外部より真空容器内に
酸素ガスを導入することはないが、Ｇｏ−０系垂直磁化
膜形成時には当然酸素が利用される。しかし現状ではＧ
ｏ −０系垂直磁化膜は短波長特性が悪＜ｔｃｏ−Ｃｒ
垂直磁化膜が中心に検討されているのが実状である。It is known that Go--Cr films having different coercive forces in the vertical direction can be formed by controlling the incident angles θS and θe of the vapor and the surface temperature of one can using the apparatus shown in FIG. G
When forming an o-Cr perpendicular magnetization film, oxygen gas is not introduced into the vacuum chamber from the outside, but oxygen is of course used when forming a Go-0 perpendicular magnetization film. However, currently G
o -0 series perpendicular magnetization film has poor short wavelength characteristics<tco-Cr
The current situation is that perpendicular magnetization films are mainly being studied.
第３図は斜め蒸着に基礎を置いた長手記録用の磁気記録
媒体の製造装置の一例である。FIG. 3 shows an example of an apparatus for manufacturing a magnetic recording medium for longitudinal recording based on oblique deposition.
第３図で、１４はポリエチレンテレフタレートフィルム
等の高分子フィルムで、１５は巻出し軸。In Fig. 3, 14 is a polymer film such as polyethylene terephthalate film, and 15 is an unwinding shaft.
１６は巻取り軸、１７は円筒キャン、１８はＧｏ−Ｆｅ
等の蒸着材料、１９は蒸発源容器、２０は電子ビーム発
生器、２１は電子ビーム１２２は蒸気流、２３．２４は
遮へい板１２５は放電電極、２６は絶縁導入端子１２７
は真空容器、２８は真空排気系で、２６はガス導入パイ
プも兼ねている。16 is a winding shaft, 17 is a cylindrical can, 18 is Go-Fe
19 is an evaporation source container, 20 is an electron beam generator, 21 is an electron beam 122 is a vapor flow, 23 and 24 is a shield plate 125 is a discharge electrode, 26 is an insulation introduction terminal 127
28 is a vacuum vessel, 28 is a vacuum exhaust system, and 26 also serves as a gas introduction pipe.
第３図の場合、θ８は９０度でθ。は酸素ガスの導入条
件、キャン温度、蒸着材料との関係で、必要な保磁力を
得るのに最適な条件に設定され、保磁力１０００ （Ｏ
ｅ） （７）ｃｏ系金合金膜厚み０，１〜０．２μｍ
）を得るには通常、３０度から４５度ぐらいに設定され
ているのが実状である。In the case of Figure 3, θ8 is 90 degrees. is set to the optimum condition to obtain the necessary coercive force depending on the oxygen gas introduction conditions, can temperature, and vapor deposition material, and the coercive force is 1000 (O
e) (7) Co-based gold alloy film thickness 0.1 to 0.2 μm
) is usually set at about 30 to 45 degrees.
斜め蒸着膜では現状１酸素を利用せずに、実用的な水準
の膜は知られていない。Currently, there is no known obliquely deposited film that does not utilize oxygen and is of a practical level.
熱処理と組み合わせて１窒素ガスを利用する例も報告さ
れているが、熱処理温度が４００°Ｃ以上と極めて高く
、高分子フィルムには用いられない。An example of using nitrogen gas in combination with heat treatment has also been reported, but the heat treatment temperature is extremely high at 400°C or higher, and it cannot be used for polymer films.
発明が解決しようとする問題点
上記した構成では、垂直磁化膜では、磁気ヘッドとの高
速摺接時の実用耐久性が不満足で、保護膜を必要とし、
周知のように、厚い保護膜（１００八〜２００人）は短
波長記録再生時のスペース損失が深酷である。一方長手
記録用では１全体を酸化雰囲気にしてＧｏ−Ｆｅ等の部
分酸化膜を形成するので、実用耐久性はＧｏ−ｃｒ垂直
磁化膜より優れているが、部分酸化による飽和磁束密度
が低下するので、短波出力の点ではＧｏ−Ｃｒ垂直磁化
膜を上回ることができないというのが現状である。Problems to be Solved by the Invention In the above configuration, the perpendicular magnetization film has unsatisfactory practical durability during high-speed sliding contact with the magnetic head, and requires a protective film.
As is well known, a thick protective film (1008 to 200 thick) causes severe space loss during short wavelength recording and reproduction. On the other hand, for longitudinal recording, a partially oxidized film such as Go-Fe is formed in an oxidizing atmosphere over the whole 1, so the practical durability is superior to a Go-cr perpendicular magnetization film, but the saturation magnetic flux density due to partial oxidation decreases. Therefore, the current situation is that it cannot exceed the Go-Cr perpendicular magnetization film in terms of short wave output.
本発明は上記事情に鑑みなされたもので、垂直磁化膜、
長手記録用蒸着膜のいずれを問わす１飽和磁束密度の大
きい１かつ実用耐久性の優れた磁性膜を得ることの出来
る製法を提供するものである。The present invention was made in view of the above circumstances, and includes a perpendicularly magnetized film,
The object of the present invention is to provide a manufacturing method capable of obtaining a magnetic film having a high saturation magnetic flux density and excellent practical durability, regardless of whether it is a vapor-deposited film for longitudinal recording.
問題点を解決するだめの手段
上記した問題点を解決するだめに本発明の磁気記録媒体
の製造方法は１回転支持体に沿わせて移動させる高分子
フィルムに強磁性金属薄膜を電子ビーム蒸着する際、蒸
着完了側に酸素、初期側に不活性ガスを隣接させて導入
するように構成したものである。Means for Solving the Problems In order to solve the above-mentioned problems, the method for manufacturing a magnetic recording medium of the present invention involves electron beam evaporation of a ferromagnetic metal thin film onto a polymer film that is moved along a support that rotates once. At this time, oxygen is introduced adjacently to the vapor deposition completion side, and inert gas is introduced adjacent to the initial vapor deposition side.
作用
本発明の磁気記録媒体の製造方法は上記した構成により
、強磁性金属薄膜の厚み方向に酸素の行き渡υ方に分布
ができて、実用耐久性を向上させる表面酸化層ができる
一方、Ｃｏ−０ｒの結晶配向性を低下させ性能を劣す酸
素の作用や、飽和磁束密度を低下させる酸素の作用に対
し、不活性ガスが酸素に対する遮へい効果を有するため
、実用耐久性と性能向上の双方を両立させることができ
ることになるのである。Function: The method for producing a magnetic recording medium of the present invention has the above-described structure, so that oxygen is distributed in the υ direction in the thickness direction of the ferromagnetic metal thin film, forming a surface oxidation layer that improves practical durability. The inert gas has a shielding effect against oxygen, which reduces the crystal orientation of 0r and deteriorates performance, and the effect of oxygen which reduces the saturation magnetic flux density, so it improves both practical durability and performance. This means that both can be achieved.
実施例
以下、図面を参照しながら本発明の実施例について説明
する。第１図は１本発明の製造方法の概念説明図である
。第１図で２９は厚み１２μｍのポリエチレンナフタレ
ートフィルム、 ３ｏ１ｄ回に支持体、３１は形成され
たＧｏ−Ｃｒ垂直磁化膜で１フイルムは矢印人の方向に
移動し、Ｇｏ−Ｏｒ蒸気流３２に先ず８点で接し、結晶
成長がはじまり、厚み方向に成長を続け、Ｅ点で完了す
る。３３はＧｏ−Ｃｒ蒸着材料、３４は蒸発源容器１３
６はスリットを有するマスクである。３６はガス導入ノ
ズルで、酸素へと、例えばＡｒ ｂ等の不活性ガスを分
配し１かつ、Ｅ側に酸素１ Ｓ側にＡｒが噴射されるよ
う隣接させて、導入するよう構成する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a conceptual explanatory diagram of the manufacturing method of the present invention. In Figure 1, 29 is a polyethylene naphthalate film with a thickness of 12 μm, 3 o 1d is a support, 31 is a formed Go-Cr perpendicular magnetization film, and 1 film moves in the direction of the arrow, and is connected to the Go-Or vapor flow 32. First, they touch at eight points, and crystal growth begins, continues to grow in the thickness direction, and completes at point E. 33 is a Go-Cr vapor deposition material, 34 is an evaporation source container 13
6 is a mask having slits. Reference numeral 36 denotes a gas introduction nozzle, which is configured to distribute an inert gas, such as Arb, to oxygen and introduce it adjacently so that oxygen 1 is injected on the E side and Ar is injected on the S side.
３７は酸素が放出され拡散する様子を模式的に示したも
ので３８はＡｒガスが放出され拡散する様子を同じく模
式的に示したもので、ノズル先端部の構成により、３７
側にＡｒ、３Ｓ側に酸素が拡散するのを無視し得るよう
にすることができる。37 schematically shows how oxygen is released and diffuses, and 38 schematically shows how Ar gas is released and diffuses.
The diffusion of Ar on the side and oxygen on the 3S side can be made negligible.
尚第１図は、垂直磁化膜の形成を模式的に示したもので
あるが、ガス導入の斜め蒸着への応用も同じ考え方で実
施できるのは勿論である。Although FIG. 1 schematically shows the formation of a perpendicularly magnetized film, it goes without saying that the same concept can also be applied to oblique vapor deposition using gas introduction.
第１図の構成で、Ｇｏ−Ｃｒ （Ｏｒ ： １ｓ、ｓ
ｗｔ％）を６６ＫＷの電子ビームで加熱蒸発させ、入射
角１１度以内で蒸着を行い、Ｇｏ−Ｃｒ膜を０．１６μ
ｍポリエチレンナフタレートフィルム上に形成した。そ
の時回転支持体は１２０’Ｃ一定とした。With the configuration shown in Figure 1, Go-Cr (Or: 1s, s
wt%) was heated and evaporated with a 66KW electron beam, and vapor deposition was performed at an incident angle of 11 degrees or less to form a Go-Cr film with a thickness of 0.16μ.
It was formed on a polyethylene naphthalate film. At that time, the rotating support was kept constant at 120'C.
酸素ノズルの孔とアルゴンノズルの孔は９０μｍφで孔
の中心間距離は０．８酊として、孔の真上がＥ点となる
ようにし、Ｅまでの距離を３７＊ｗに設定した。The hole of the oxygen nozzle and the hole of the argon nozzle had a diameter of 90 μm, and the distance between the centers of the holes was set to 0.8 mm, so that point E was directly above the hole, and the distance to E was set to 37*w.
酸素を０．７６Ｎ −（１／ｍｉｎ 、アルゴンを０．
８８Ｎ−ｅ／ｍｉｎ導入してＣｒｏ−Ｃｒ垂直磁化膜を
形成したものを８酊幅にスリットし、８朋ビデオの走行
系、シリンダ、ヘッドを利用して、記録波長０．３μｍ
の記録再生を行った。Oxygen at 0.76N-(1/min), Argon at 0.76N-(1/min).
A Cro-Cr perpendicularly magnetized film was formed by introducing 88 N-e/min, which was then slit into 8-inch widths, and was recorded at a recording wavelength of 0.3 μm using the running system, cylinder, and head of an 8-hour video.
was recorded and played back.
又、比較例として、ガスを導入しない従来法で形成した
Ｇｏ−Ｃｒ垂直磁化膜を採用した。Further, as a comparative example, a Go--Cr perpendicular magnetization film formed by a conventional method without introducing gas was used.
尚、保護膜として、平均厚み３Ｑ入のパーフルオロオク
タン酸の真空蒸着膜を夫々に配した。As a protective film, a vacuum-deposited film of perfluorooctanoic acid having an average thickness of 3Q was disposed on each of the test pieces.
尚、Ｇｏ−Ｃｒ厚みは０．１６μｍでほぼ同じ保磁力（
ｅｏｏｏｅ〜ｅ１２０ｅ）で比較した。In addition, the Go-Cr thickness is 0.16 μm and has almost the same coercive force (
eooooe~e120e).
本発明品による磁気記録媒体では、主としてＣｏｏとＣ
ｒ２Ｏ３の酸化層がち密に表面をおおっていてその厚み
はオージェ電子分光法で解析したところ８ｏ入あり１そ
のために、従来例との比較で耐久性に差が認められたと
考えられる。In the magnetic recording medium according to the present invention, mainly Coo and C
An oxidized layer of r2O3 densely covers the surface, and its thickness was analyzed by Auger electron spectroscopy and was found to be 80m1. This is probably why there was a difference in durability compared to the conventional example.
即ち耐久性の差Ｆｉ１ 出力変動が３ｄＢ以上になるく
り返し走行回数で比較じたものであるが、本発明の実施
例が、１０’Ｃ１０％ＲＨで４０６バスであったのに、
比較例では１２パスであ−）た点からその差は顕著であ
る。尚初期出力には差が見られなかったことから、本発
明の価値がわかる。That is, the difference in durability Fi1 was compared based on the number of repeated runs where the output fluctuation was 3 dB or more, and although the example of the present invention was 406 buses at 10'C 10% RH,
The difference is remarkable since the comparative example required 12 passes. The value of the present invention can be seen from the fact that no difference was observed in the initial output.
斜め蒸着の場合は、同じ保磁力を得るのに、飽和磁束密
度が２０％から６０％高くできるので、短波長出力を２
〜４ｄＢ高くしても同じ耐久性の膜が得られる利点があ
る。In the case of oblique deposition, the saturation magnetic flux density can be increased by 20% to 60% to obtain the same coercive force, so the short wavelength output can be increased by 20%.
There is an advantage that a film with the same durability can be obtained even if it is increased by ~4 dB.
本発明の実施例では、不活性ガスをムｒとしたが、Ｈｅ
、Ｋｒ、Ｘｅ等の単−又は混合でもよい。In the embodiments of the present invention, the inert gas was used as a gas, but He
, Kr, Xe, etc., or a mixture thereof may be used.
又回転支持体として円筒キャンを用いたが、回転ベルト
等であっても良い。Further, although a cylindrical can was used as the rotating support, a rotating belt or the like may also be used.
又、ガスの導入は、イオンとして導入してもよいし５分
子流として導入するなどの工夫も本発明の範囲で行える
ことができる。Further, the gas may be introduced in the form of ions or in a flow of five molecules, etc., within the scope of the present invention.
発明の効果
以上のように本発明によれば１垂直磁化膜の形成時は電
磁変換特性を低下させずに耐久性を改良でき、斜め蒸着
膜の形成時は、耐久性を保った状態で、飽和磁束密度を
大きくできるので、電磁変換特性を向上させることがで
きるといったすぐれた効果がある。Effects of the Invention As described above, according to the present invention, when forming a perpendicularly magnetized film, the durability can be improved without deteriorating the electromagnetic conversion characteristics, and when forming an obliquely deposited film, the durability can be improved while maintaining the durability. Since the saturation magnetic flux density can be increased, the electromagnetic conversion characteristics can be improved, which is an excellent effect.
第１図は本発明の磁気記録媒体の製法を実施するための
蒸着機の要部説明図、第２図は従来の重着磁気記録用磁
気記録媒体の製造に用いられる蒸着装置の一例の内部構
成図１第３図は従来の斜め蒸着装置の一例の内部構成図
である。
２９・・・・・・高分子フィルム、３０・・・・・・回
転支持体、３３・・・・・・蒸着材料、３６・・・・・
・ガス導入ノズル（ａ：酸素、ｂ；不活性気体）。Fig. 1 is an explanatory diagram of the main parts of a vapor deposition machine for carrying out the method for producing a magnetic recording medium of the present invention, and Fig. 2 is an interior view of an example of a vapor deposition machine used for producing a conventional magnetic recording medium for superimposed magnetic recording. Configuration Diagram 1 FIG. 3 is an internal configuration diagram of an example of a conventional oblique evaporation apparatus. 29... Polymer film, 30... Rotating support, 33... Vapor deposition material, 36...
- Gas introduction nozzle (a: oxygen, b: inert gas).
Claims (1)
性金属薄膜を電子ビーム蒸着する際、蒸着完了側に酸素
、初期側に不活性ガスを隣接させて導入することを特徴
とする磁気記録媒体の製造方法。A magnetic recording medium characterized in that when a ferromagnetic metal thin film is deposited by electron beam on a polymer film that is moved along a rotating support, oxygen is introduced adjacent to the deposition completion side and an inert gas is introduced to the initial deposition side. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2717586A JPS62185246A (en) | 1986-02-10 | 1986-02-10 | Production of magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2717586A JPS62185246A (en) | 1986-02-10 | 1986-02-10 | Production of magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62185246A true JPS62185246A (en) | 1987-08-13 |
Family
ID=12213729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2717586A Pending JPS62185246A (en) | 1986-02-10 | 1986-02-10 | Production of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62185246A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63285725A (en) * | 1987-05-16 | 1988-11-22 | Sony Corp | Production of perpendicular magnetic recording medium |
| JP2006271811A (en) * | 2005-03-30 | 2006-10-12 | Duskin Co Ltd | Container and tool for aromatic substance |
| JP2008018977A (en) * | 2006-07-13 | 2008-01-31 | Taisei Kako Co Ltd | Cap closure guiding device in container with cap |
| JP2008259817A (en) * | 1994-10-11 | 2008-10-30 | Ian Marshall Moore | Single use syringe |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58158030A (en) * | 1982-03-15 | 1983-09-20 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
-
1986
- 1986-02-10 JP JP2717586A patent/JPS62185246A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58158030A (en) * | 1982-03-15 | 1983-09-20 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63285725A (en) * | 1987-05-16 | 1988-11-22 | Sony Corp | Production of perpendicular magnetic recording medium |
| JP2008259817A (en) * | 1994-10-11 | 2008-10-30 | Ian Marshall Moore | Single use syringe |
| JP2006271811A (en) * | 2005-03-30 | 2006-10-12 | Duskin Co Ltd | Container and tool for aromatic substance |
| JP2008018977A (en) * | 2006-07-13 | 2008-01-31 | Taisei Kako Co Ltd | Cap closure guiding device in container with cap |
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