JPS62184345A - Method for measuring ion concentration - Google Patents

Method for measuring ion concentration

Info

Publication number
JPS62184345A
JPS62184345A JP61025962A JP2596286A JPS62184345A JP S62184345 A JPS62184345 A JP S62184345A JP 61025962 A JP61025962 A JP 61025962A JP 2596286 A JP2596286 A JP 2596286A JP S62184345 A JPS62184345 A JP S62184345A
Authority
JP
Japan
Prior art keywords
ion
measured
measuring
measurement
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61025962A
Other languages
Japanese (ja)
Inventor
Kenichi Sugano
菅野 憲一
Tetsuya Katayama
潟山 哲哉
Masao Koyama
小山 昌夫
Masayoshi Okamoto
正義 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61025962A priority Critical patent/JPS62184345A/en
Publication of JPS62184345A publication Critical patent/JPS62184345A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To permit miniaturization and stable measurement of a material to be measured in a measuring liquid by using an FET ion sensor as a reference electrode in the stage of measuring said material in the measuring liquid. CONSTITUTION:The FET ion sensor formed with an ion selective film to measure a material except the material to be measured in the measuring sample liquid as an object to be measured in the gate region of an insulated gate type transistor is used as the reference electrode in the stage of measuring the material to be measured in the measuring liquid. The FET sensor to measure the material, with which the fluctuation of the ion concn. thereof is negligible, except the material to be measured as the object to be measured in multi-ISFET to be used for measurement is used as the reference electrode and therefore, the integration with the ISFET for measurement and miniaturization are possible. Since the sensor itself has the effect of an impedance converter, the measurement can be made with substantially no influence of noise.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は測定試料液中のとくに、血液など体液中のイオ
ン濃度の測定を行なうFETイオンセンサ(以下、l5
FHTともいう)を用いたイオンを一度の測定方法に関
する。
Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to an FET ion sensor (hereinafter referred to as 15
It relates to a method for measuring ions once using FHT (also referred to as FHT).

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来より、成牛の特定のイオン一度を選択的に定量でき
るイオン選択性電極が、特定イオンのモニターや水質分
ケ「寺の広い分野で用いられている。
Ion-selective electrodes that can selectively quantify specific ions in adult cows have been used in a wide range of fields, including monitoring specific ions and analyzing water quality.

近年では、特に血液中のNa、に、Ct−等の各種イオ
ンの定量などがイオン選択性電極を用いてさかん屹行な
われている。
In recent years, ion-selective electrodes have been increasingly used to quantify various ions, particularly Na, Ct-, and the like in blood.

このようなイオン選択性電極の中で、従来のイオン選択
性電極に代わって、絶縁ゲート型のFE’l’のゲート
部にイオン感応膜を形成したFETイオンセンサが注目
されるようになってきた。これは、i’g’rイオンセ
ンサが、トランジスタやIC,LSIなどをつくるとき
に用いるシリコンプロセスを用いることにより同時に複
数個つくることができ、多重化が容易で、しかも小型化
が容易であることとや、大量生産が可能なため低コスト
化が期待できるなどの理由による。このようなFkTイ
オンセンサは、小型化、多重化に適することから、複数
の測定項目を対象としたマルチタイプのFETイオンセ
ンサ(以下、マルチl5FETともいう)が種々考案さ
れている。
Among such ion-selective electrodes, FET ion sensors, in which an ion-sensitive membrane is formed on the gate of an insulated gate type FE'l', have been attracting attention instead of conventional ion-selective electrodes. Ta. This is because multiple i'g'r ion sensors can be manufactured at the same time by using the silicon process used to make transistors, ICs, LSIs, etc., making it easy to multiplex and downsize. This is because it can be mass-produced and can be expected to reduce costs. Since such FkT ion sensors are suitable for miniaturization and multiplexing, various multi-type FET ion sensors (hereinafter also referred to as multi-I5FETs) that target a plurality of measurement items have been devised.

ところでこのようなに’nTイオンセンサにおいても、
通常のイオンセンサと同様にイオンR&の測定の際には
基準電極を用いて、基準電極と測定電極の間の電位差を
求める必要がある。従来より、こうした基準電極として
は、たとえば飽和せコウ電極や銀−塩化銀電極などが用
いられてきている。
By the way, even in such a 'nT ion sensor,
As with a normal ion sensor, when measuring ions R&, it is necessary to use a reference electrode and determine the potential difference between the reference electrode and the measurement electrode. Conventionally, as such a reference electrode, for example, a saturated plaster electrode, a silver-silver chloride electrode, etc. have been used.

このような基準1!極を安定状態で使うためには、この
基M[極を構成する内部電極に接して基準電位を発生さ
せるための電解質溶液が必要であり、その電解質溶液を
保持するため、上記の如き基準電極はFk、Tイオンセ
ンサの形状に比べて非常に大型にならざるを得なかった
。したがって、これらの基準1Jc#Aをマルチl5F
ET用として組み込むことは小型化を目指している複数
のマルチタイプを組込だマルチl8FETの特長が活か
せなくなり、問題であった。
Standard 1 like this! In order to use the electrode in a stable state, an electrolyte solution is required to generate a reference potential in contact with the internal electrodes that make up the electrode. had to be much larger than the Fk and T ion sensors. Therefore, these standards 1Jc#A are multi-l5F
Incorporating it for ET was a problem because the features of the multi-l8FET, which incorporates multiple multi-types aimed at miniaturization, could not be utilized.

たとえ仮に、このような基本構成を有する上記基準電極
を小型化してマルチl5FET中に組み込んだとしても
、その内部電極に接する電解液量が少くならざるを得な
いため、基準tt極として安定性に欠は短寿命にならざ
るを得ないという欠点があった〇 一方これに対して、絶縁ゲート型電界効果トランジスタ
のゲート部にイオン非感応性の膜を形成した小型基準電
極が考えられ、種々のテストが繰り返されている。しか
しながらこれまで長寿命なイオン非感応性膜を形成した
基準電極は開発されていない。
Even if the above-mentioned reference electrode having such a basic configuration were miniaturized and incorporated into a multi-l5FET, the amount of electrolyte in contact with the internal electrode would inevitably be small, resulting in poor stability as a reference TT electrode. On the other hand, a small reference electrode with an ion-insensitive film formed on the gate of an insulated gate field effect transistor has been considered, and various tests have been repeated. However, no reference electrode with a long-life ion-insensitive membrane has been developed so far.

〔発明の目的〕[Purpose of the invention]

本発明は上記欠点に対してなされたものであり、安定に
測定物質の検出ができるイオン濃度の測定方法を提供す
ることを目的とする。
The present invention has been made to solve the above-mentioned drawbacks, and an object of the present invention is to provide a method for measuring ion concentration that can stably detect a substance to be measured.

〔発明の概要〕[Summary of the invention]

本発明は、絶縁ゲート型トランジスタのゲート領域に、
測定試料液中の被測定物質以外の物質を測定対象とする
イオン選択膜を形成してなるPETイオンセンサを、前
記測定液中の被測定物を測定する際の基準電極として用
いることを特徴とする。
In the present invention, in the gate region of an insulated gate transistor,
A PET ion sensor formed with an ion-selective membrane that targets substances other than the substance to be measured in the measurement sample liquid is used as a reference electrode when measuring the substance to be measured in the measurement liquid. do.

このような本発明に係るイオン濃度の測定方法では、測
定に用いるマルチl8Fj(Tにおいて被測定物質以外
のそのイオン誼度変動が無視できる物質を測定対象とす
るFETセンサを基準電極として用いるので、測定用の
l8FETとの1体化、小型化が可能である。さらには
従来のl8FETではない構成のイオン選択性電極を基
準電極として用いた場合では、イオン選択膜の抵抗が大
きく測定中にノイズを拾いやすい等の問題点があるが、
FffTセンサを基準電極として用いた場合には、セン
サ自体がインピーダンス変換器の働きを有しているため
、ノイズの影響をほとんど受けずに測定できる。
In the method for measuring ion concentration according to the present invention, a multi-I8Fj (T) FET sensor whose measurement target is a substance whose ion density fluctuation can be ignored other than the substance to be measured is used as a reference electrode. It is possible to integrate it with an 18FET for measurement and make it smaller.Furthermore, when an ion-selective electrode with a configuration other than a conventional 18FET is used as a reference electrode, the resistance of the ion-selective membrane is large, causing noise during measurement. There are some problems, such as the fact that it is easy to pick up
When an FffT sensor is used as a reference electrode, since the sensor itself functions as an impedance converter, measurement can be performed with almost no influence from noise.

〔発明の効果〕〔Effect of the invention〕

本発明に係るイオン濃度の測定方法はイオンセンサとし
て小型化が可能なI”ETセンサの特長を損なわずに、
かつ、安定に被測定物質を測定でき、工業的価値は大で
ある。
The method for measuring ion concentration according to the present invention does not impair the features of the I"ET sensor, which can be miniaturized as an ion sensor.
In addition, the substance to be measured can be measured stably, and it has great industrial value.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明をさらに実施例にもとづき詳しく説明する
Hereinafter, the present invention will be further explained in detail based on Examples.

第1図の模式図は本発明の一実施例としての流通製マル
チISFgT及びこのマルチISF’nTの駆動部、デ
ータ処理部等を含む測定糸を示す。図中点! (1)内
は流通型マルチl5lI’ETを模式的に示したもので
あり、(2)は試料の流通路である。(3)は流通路壁
で、(4)、(4g )、(4g )はそれぞれ絶縁ゲ
ー) ff FETの表面にイオン感応膜を形成したイ
オン選択性電極であり、(41)はナトリウムイオンセ
ンサ、(4S)はカリウムイオンセンサ(43)は硝酸
イオンセンサである。ここで、硝酸イオンセンサ(43
)は基準電極として用いるイオン選択性F]!iTセン
サである。(5)は各々のl8FETのソース部に接続
されている白金電極であり、測定液との間にアースをと
るためのものである。(6)は前記の各々のl5FET
に、ドレンとソースからのリード線によって接続されて
いる前記の各々のl8FETへの加電圧回路である。さ
らに、(7)は前記各々のI S F)、:Tにおける
ドレン電流値からイオン湿度を算出するためのデータ処
理部、(8)は表示部である。なお、(9,)、(9宜
)、(9m)はそれぞれのFETの絶縁ゲート部に形成
されたイオン感応部である。本測定系に8いて、試料の
流通路(2)にたとえば血精をCa(NO,)2を数l
omM含有する希釈液で希釈したサンプルを通すことζ
こより、一定量であるNO;イオン縫度を基準に被測定
物資であるNa、K イオン濃度を測定することができ
る。この時、filll定に先立って標準液により較正
を行なっておく。血液中にはNO;はほとんど存在しな
いのでN07を含む希釈液で測定することにより硝酸イ
オンセンサからの出力を基準電位しして得ることができ
る。なお、血液中ではり、、Ca  も微量にしか存在
しないため、L1イオン選択性FETセンサ、Ca  
イオン選択性Flj’rセンサを基準電極として含むマ
ルチタイプのFETイオンセンサを用いて血中イオン濃
度の分析も可能である。
The schematic diagram in FIG. 1 shows a multi-ISFgT produced by a distribution company as an embodiment of the present invention, and a measuring thread including a driving section, a data processing section, etc. of this multi-ISF'nT. The middle point of the diagram! (1) is a schematic diagram of a flow-through type multi-l5lI'ET, and (2) is a sample flow path. (3) is the flow channel wall, (4), (4g), and (4g) are ion-selective electrodes with an ion-sensitive membrane formed on the surface of an insulating gate (FFFET), and (41) is a sodium ion sensor. , (4S), the potassium ion sensor (43) is a nitrate ion sensor. Here, the nitrate ion sensor (43
) is the ion selectivity F used as a reference electrode! It is an iT sensor. (5) is a platinum electrode connected to the source part of each 18FET, and is used to establish a ground between the electrode and the measurement liquid. (6) is each of the above 15FETs
and a voltage applying circuit to each of the above-mentioned 18FETs connected by lead wires from the drain and source. Furthermore, (7) is a data processing unit for calculating the ion humidity from the drain current value at each of the above-mentioned ISF), :T, and (8) is a display unit. Note that (9,), (9y), and (9m) are ion sensitive parts formed in the insulated gate part of each FET. In this measuring system, for example, several liters of blood semen and Ca(NO,)2 are added to the sample flow path (2).
Passing the sample diluted with a diluent containing omMζ
From this, it is possible to measure the concentration of Na and K ions, which are the substances to be measured, based on the constant amount of NO; ion density. At this time, calibration is performed using a standard solution prior to fill determination. Since there is almost no NO; in blood, by measuring with a diluent containing N07, the output from the nitrate ion sensor can be obtained as a reference potential. In addition, since Ca exists only in trace amounts in blood, L1 ion selective FET sensor, Ca
Blood ion concentration analysis is also possible using a multi-type FET ion sensor that includes an ion-selective Flj'r sensor as a reference electrode.

第2図に第1図で示したマルチIS1!’l’を用いた
測定液、希釈液等の流れを示した。αυは基準電極とし
てのイオン選択性FETセンサを組み込んだマルチl8
FETである。圓は希釈液の容器、03は測定対象とし
ての血清である。(141はポンプであり前記血清un
i’や希釈液α4′を試料調製容器α四に導く。
Figure 2 shows the multi-IS1 shown in Figure 1! The flow of measurement solution, dilution solution, etc. using 'l' is shown. αυ is a multi-l8 incorporating an ion-selective FET sensor as a reference electrode.
It is an FET. Circle is a container for a diluent, and 03 is serum as a measurement target. (141 is a pump and the serum un
i' and the diluent α4' are introduced into the sample preparation container α4.

qljは切換えコックである。ポンプ(17>は前記マ
ルチl5FETαυに希釈欣により所定のz軸度に希釈
された測定試料敢を導く働きをする。(181は廃液タ
ンクである。なお、翰は前記ポンプα力、Qη、コック
αeを駆動させるための駆動装置である。このようなマ
ルチタイプのFg’rセンサーに基準電極としてのに″
ETイオンセンサを組み込んでなる分析装置では、従来
の基準電極を用いた場合と比べて小型になり、ノイズ等
に強く安定した測定ができる。
qlj is a switching cock. The pump (17) serves to guide the measurement sample diluted to a predetermined z-axis degree by the dilution pump to the multi-l5FET αυ. (181 is a waste liquid tank. The handles are the pump α force, Qη, and the cock. This is a driving device for driving αe.
An analyzer incorporating an ET ion sensor is smaller than that using a conventional reference electrode, is resistant to noise, and can perform stable measurements.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例としての()tllll決方
法現するためのイオン濃度の測定系を示す模式図、第2
図はマルチIf:1FETを中心にした測定歇、希釈液
等の流れを示した模式図である。 (I)、αυ・・・流通型マルチInk″JIT、(2
)・・・流通路、(4)・・・ナトリウムイオンセンサ
、(4)・・・カリウムイオンセンサ、(4m)・・・
硝酸イオンセンサ、tlJ’・・・希釈液、u31’・
・・測定液、ul・・・駆動装置。 代理人 弁理士 則 近 憲 佑 同    竹 花 番久男
FIG. 1 is a schematic diagram showing an ion concentration measurement system for realizing the ()tllll determination method as an embodiment of the present invention, and FIG.
The figure is a schematic diagram showing the flow of measurement intervals, diluent, etc. centering around the multi-If:1 FET. (I), αυ...Distribution type multi-Ink''JIT, (2
)...Flow path, (4)...Sodium ion sensor, (4)...Potassium ion sensor, (4m)...
Nitrate ion sensor, tlJ'... diluent, u31'.
...Measurement liquid, ul...Drive device. Agent Patent Attorney Nori Chika Yudo Takehana Bank Hisao

Claims (1)

【特許請求の範囲】[Claims] 絶縁ゲート型トランジスタのゲート領域に、測定試料液
中の被測定物質以外の物質を測定対象とするイオン選択
膜を形成してなるFETイオンセンサを、前記測定液中
の被測定物質を測定する際の基準電極として用いること
を特徴とするイオン濃度の測定方法。
When measuring a substance to be measured in the measurement liquid, an FET ion sensor is formed by forming an ion-selective membrane on the gate region of an insulated gate transistor to measure substances other than the substance to be measured in the measurement sample liquid. A method for measuring ion concentration, characterized in that it is used as a reference electrode.
JP61025962A 1986-02-10 1986-02-10 Method for measuring ion concentration Pending JPS62184345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61025962A JPS62184345A (en) 1986-02-10 1986-02-10 Method for measuring ion concentration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61025962A JPS62184345A (en) 1986-02-10 1986-02-10 Method for measuring ion concentration

Publications (1)

Publication Number Publication Date
JPS62184345A true JPS62184345A (en) 1987-08-12

Family

ID=12180364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61025962A Pending JPS62184345A (en) 1986-02-10 1986-02-10 Method for measuring ion concentration

Country Status (1)

Country Link
JP (1) JPS62184345A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457161A (en) * 1987-08-28 1989-03-03 Shindengen Electric Mfg Electrochemical measuring method
JPS6466558A (en) * 1987-09-07 1989-03-13 Toa Electronics Oxidizing/reducing potential difference
US8502277B2 (en) 2003-08-29 2013-08-06 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457161A (en) * 1987-08-28 1989-03-03 Shindengen Electric Mfg Electrochemical measuring method
JPS6466558A (en) * 1987-09-07 1989-03-13 Toa Electronics Oxidizing/reducing potential difference
US8502277B2 (en) 2003-08-29 2013-08-06 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same
US8766326B2 (en) 2003-08-29 2014-07-01 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor
US8772099B2 (en) 2003-08-29 2014-07-08 Japan Science And Technology Agency Method of use of a field-effect transistor, single-electron transistor and sensor
US9506892B2 (en) 2003-08-29 2016-11-29 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same

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