JPS62177985A - Thin film thermoelectric conversion element - Google Patents
Thin film thermoelectric conversion elementInfo
- Publication number
- JPS62177985A JPS62177985A JP61017955A JP1795586A JPS62177985A JP S62177985 A JPS62177985 A JP S62177985A JP 61017955 A JP61017955 A JP 61017955A JP 1795586 A JP1795586 A JP 1795586A JP S62177985 A JPS62177985 A JP S62177985A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- thermoelectric
- substrates
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 9
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 3
- 229910018598 Si-Co Inorganic materials 0.000 abstract 1
- 229910008453 Si—Co Inorganic materials 0.000 abstract 1
- 229910006639 Si—Mn Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は熱電変換素子に係り、特に薄膜を用いた熱電素
子で大きな温度差を確保することにより大きな出力を得
るに好適な熱電変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thermoelectric conversion element, and particularly to a thermoelectric conversion element using a thin film suitable for obtaining a large output by ensuring a large temperature difference.
薄膜型の熱電変換素子においては膜厚方向に熱を流す構
造と膜の面内方向に熱を流す構造があるが、熱流が膜厚
方向の場合、高温側と低温側の温度差を大きくとれない
欠点がある。そのため熱流が膜の面内方向となる構造の
ものが大きな出力を得る一ヒで有利である。この構造し
こ関する公知例としてフイルムトの片面にＰ及Ｎ型のｗ
ｌ、膜パターンを形成させる方法が開示されている。（
特開昭５３−３１９８５号）。Thin-film thermoelectric conversion elements have a structure in which heat flows in the film thickness direction and a structure in which heat flows in the in-plane direction of the film, but when heat flows in the film thickness direction, it is difficult to maintain a large temperature difference between the high temperature side and the low temperature side. There are no drawbacks. Therefore, a structure in which the heat flow is in the in-plane direction of the membrane is advantageous in terms of obtaining a large output. As a known example of this structure, P and N type w are formed on one side of the film.
1. A method for forming a film pattern is disclosed. (
JP-A No. 53-31985).
しかし、この公知例においては膜の片面ｌ−で■）とＮ
型膜の接続を行う方法であるので温度差を有効にとれな
いこと、またフィル１１を基板に用いているので高温で
の使用が回能である。However, in this known example, one side of the membrane is
Since this is a method of connecting mold films, temperature differences cannot be taken effectively, and since the film 11 is used as a substrate, it can be used at high temperatures.
本発明の目的はかかる欠点をなくし、薄膜で温度差を有
効に確保でき、かつ高温域で使用できる集積度の高い薄
膜熱電素子を提供することにある。An object of the present invention is to eliminate such drawbacks, to provide a thin film thermoelectric element with a high degree of integration, which can effectively secure a temperature difference with a thin film, and which can be used in a high temperature range.
１１記目的はまず基板材料として耐熱性を有し、熱及び
電気的絶縁物であるガラスやセラミックスの薄板を用い
、薄板の高温側となる部分にメタライズを施し５片面に
Ｐ型熱電物質膜を、他の面にＮ型熱電物質膜を蒸着、ス
パッタ等により形成しく２）
て、Ｐ及びＮ膜の接続を行って要素基板を作成し、次に
要素基板を無機質接着材を用いて積層接着を行うと共に
隣接する基板のＰ及びＮ型膜を電気的に接続することに
よって達成される。The purpose of item 11 is to first use a thin plate of glass or ceramics, which has heat resistance and is a thermal and electrical insulator, as the substrate material, metallizes the high temperature side of the thin plate, and coats one side with a P-type thermoelectric material film. , an N-type thermoelectric material film is formed on the other surface by vapor deposition, sputtering, etc. 2) Then, the P and N films are connected to create an element substrate, and then the element substrate is laminated and bonded using an inorganic adhesive. This is achieved by electrically connecting the P and N type films of adjacent substrates.
以下１本発明を実施例により詳細に説明する。 The present invention will be explained in detail below using examples.
第１図は本発明による薄膜型熱電素子の製造プロセスを
示す。FIG. 1 shows a manufacturing process of a thin film type thermoelectric element according to the present invention.
（ａ）図は要素基板の断面を示す。基板］−はエツジ部
をテーパ状に加工した厚さ０．５ｍｍのパイレックスガ
ラスであり、表面は梨地状にして、金属や熱電物質との
密着性を向上させた。このガラス基板１の高温側端面に
蒸着法によりＮｉメタライズ２（厚さ１μｍ）を行った
後、まずＰ型熱電物質であるＦ ｅ Ｓ ３． Ｍ
ｎ ３をスパッタ法でガラスの一方の面に形成（厚さ
２μｍ）し、さらにガラス基板１のもう一方の面にｎ型
熱電物質であるＦｅ−８ｉ−Ｃｏ４をスパッタした。エ
ツジ部がテーパ状になっているのでスパッタしたＰ型及
びＮ型膜はＮｉメタライズ層を介して電気的に接続され
る。(a) The figure shows a cross section of the element substrate. The substrate] was made of Pyrex glass with a thickness of 0.5 mm with tapered edges and a matte surface to improve adhesion to metals and thermoelectric materials. After performing Ni metallization 2 (thickness 1 μm) on the high-temperature side end face of the glass substrate 1 by vapor deposition, first, F e S 3. which is a P-type thermoelectric material is applied. M
n3 was formed on one surface of the glass (thickness: 2 μm) by sputtering, and Fe-8i-Co4, which is an n-type thermoelectric material, was sputtered on the other surface of the glass substrate 1. Since the edge portion is tapered, the sputtered P-type and N-type films are electrically connected via the Ni metallized layer.
（ｂ）図は要素基板の積層方法を示したものである。２
０Ｘ１０＋ｎｎ＋角の要素基板５は無機質の接着剤６を
界して５０ケ積層した。この時、隣接する基板間のＰ型
膜とＮ型膜を電気的に直列に接続するため、接着剤層の
低温側の一部に導電性ペースト７を埋め込んだ。The figure (b) shows a method of laminating element substrates. 2
Fifty element substrates 5 of 0×10+nn+ angle were laminated with an inorganic adhesive 6 interposed therebetween. At this time, in order to electrically connect the P-type film and the N-type film between adjacent substrates in series, a conductive paste 7 was embedded in a part of the adhesive layer on the low temperature side.
（ｃ）図は完成した薄膜型熱電変換素子の断面を示す。Figure (c) shows a cross section of the completed thin film thermoelectric conversion element.
高温端面と低温端面にＣｕ板８を薄い無機接着剤９を界
して接合し、Ｐ型及びＮ型熱電膜の′ このようにして
得られた素子の高温側と低温側に２００″Ｃ″、の温度
差を与えたところ端子間に現われた電圧は約３ｖであっ
た。このように本発明によれば大きさが３０Ｘ２０Ｘ１
０ｍｍ程度の小さい素子で高い電圧が得られ、また、熱
流を膜の面内方向とし、熱絶縁物と積層することによっ
て、温度差を有効に利用できる。A Cu plate 8 was bonded to the high-temperature end face and the low-temperature end face with a thin inorganic adhesive 9 interposed therebetween, and the P-type and N-type thermoelectric films were heated at 200°C on the high-temperature side and the low-temperature side of the thus obtained device. When a temperature difference of , was applied, the voltage appearing between the terminals was about 3V. According to the present invention, the size is 30X20X1.
A high voltage can be obtained with an element as small as 0 mm, and temperature differences can be effectively utilized by directing heat flow in the plane of the film and laminating it with a thermal insulator.
第１図は本発明の一実施例の構成図で、（８）は要素基
板の断面図、（ｂ）は同じく積層構造図、（ｃ）は完成
した熱電変換素子の断面図である。
１・・・ガラス基板、２・・・Ｎｉメタライズ膜、３・
・・Ｐ型熱電膜、４・・・Ｎ型熱電膜、５・・・要素基
板、１゜・・・電極。FIG. 1 is a block diagram of an embodiment of the present invention, in which (8) is a cross-sectional view of an element substrate, (b) is a laminated structure diagram, and (c) is a cross-sectional view of a completed thermoelectric conversion element. 1...Glass substrate, 2...Ni metallized film, 3.
...P type thermoelectric film, 4...N type thermoelectric film, 5...element substrate, 1°...electrode.
Claims (1)
及び電気の不良導体で耐熱性を有する薄い基板の表面及
び裏面にＰ型熱電物質及びＮ型熱電物質の薄膜を各々形
成し、高温側となる端部でＰ型とＮ型熱電物質が電気的
に接続された要素基板を用意し、これを複数個積層する
と共に、各々の基板のＰ型膜とＮ型膜を直列に接続した
ことを特徴とする薄膜熱電変換素子。1. In a thermoelectric conversion element that generates electricity by applying heat, thin films of P-type thermoelectric material and N-type thermoelectric material are formed on the front and back surfaces of a heat-resistant thin substrate that is a poor conductor of heat and electricity, and Prepared element substrates in which P-type and N-type thermoelectric materials were electrically connected at the ends thereof, stacked a plurality of these, and connected the P-type film and N-type film of each substrate in series. A thin film thermoelectric conversion element characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61017955A JPS62177985A (en) | 1986-01-31 | 1986-01-31 | Thin film thermoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61017955A JPS62177985A (en) | 1986-01-31 | 1986-01-31 | Thin film thermoelectric conversion element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62177985A true JPS62177985A (en) | 1987-08-04 |
Family
ID=11958175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61017955A Pending JPS62177985A (en) | 1986-01-31 | 1986-01-31 | Thin film thermoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62177985A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2664745A1 (en) * | 1990-07-12 | 1992-01-17 | Landis & Gyr Betriebs Ag | Thermoelectric converter and method for manufacturing it |
| EP0880184A2 (en) * | 1997-05-22 | 1998-11-25 | Ngk Insulators, Ltd. | Thermoelectric conversion module and method of manufacturing the same |
| US6043423A (en) * | 1997-04-28 | 2000-03-28 | Sharp Kabushiki Kaisha | Thermoelectric device and thermoelectric module |
| US7351906B2 (en) | 2003-11-17 | 2008-04-01 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element |
-
1986
- 1986-01-31 JP JP61017955A patent/JPS62177985A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2664745A1 (en) * | 1990-07-12 | 1992-01-17 | Landis & Gyr Betriebs Ag | Thermoelectric converter and method for manufacturing it |
| US6043423A (en) * | 1997-04-28 | 2000-03-28 | Sharp Kabushiki Kaisha | Thermoelectric device and thermoelectric module |
| EP0880184A2 (en) * | 1997-05-22 | 1998-11-25 | Ngk Insulators, Ltd. | Thermoelectric conversion module and method of manufacturing the same |
| EP0880184A3 (en) * | 1997-05-22 | 2000-09-13 | Ngk Insulators, Ltd. | Thermoelectric conversion module and method of manufacturing the same |
| US7351906B2 (en) | 2003-11-17 | 2008-04-01 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element |
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