JPS6217484Y2 - - Google Patents
Info
- Publication number
- JPS6217484Y2 JPS6217484Y2 JP19399882U JP19399882U JPS6217484Y2 JP S6217484 Y2 JPS6217484 Y2 JP S6217484Y2 JP 19399882 U JP19399882 U JP 19399882U JP 19399882 U JP19399882 U JP 19399882U JP S6217484 Y2 JPS6217484 Y2 JP S6217484Y2
- Authority
- JP
- Japan
- Prior art keywords
- container
- substrate
- etching
- heated
- eddy current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 230000006698 induction Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 239000003251 chemically resistant material Substances 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Description
【考案の詳細な説明】
（技術分野）
本考案は化学エツチングによる基板の加工装置
に係り、特に基板周囲を局部的に加熱して立上り
の速い昇温により安定なエツチングを行なうこと
ができる基板の加工装置に関するものである。[Detailed Description of the Invention] (Technical Field) The present invention relates to a substrate processing device using chemical etching, and in particular, it is capable of stably etching a substrate by locally heating the periphery of the substrate and rapidly increasing the temperature. This relates to processing equipment.
（従来技術）
従来の液温全体を上げて化学エツチングを行な
う基板の加工装置を第１図に示す。同図におい
て、１は例えばホツトプレートのようなエツチン
グ液を昇温させるための加熱器、２はエツチング
液、３はエツチング液２を入れる容器である。従
来装置はこのように構成されているから、例え
ば、シリコン板上に形成された窒素膜をエツチン
グする場合、エツチング液としてリン酸を使用し
てその液温を140℃〜150℃に昇温して行なわれる
が、リン酸液全体を所定温度まで昇温させなけれ
ばならないので、その昇温のための所要時間が長
くなるだけでなく、この間に液表面からの蒸発に
よつてエツチング液の組成が変り易く、一定速度
でのエツチングが難かしいなどの欠点があつた。(Prior Art) FIG. 1 shows a conventional substrate processing apparatus that performs chemical etching by raising the entire liquid temperature. In the figure, 1 is a heater such as a hot plate for raising the temperature of the etching solution, 2 is the etching solution, and 3 is a container in which the etching solution 2 is placed. Conventional equipment is configured in this way, so for example, when etching a nitrogen film formed on a silicon plate, phosphoric acid is used as the etching solution and the temperature of the solution is raised to 140°C to 150°C. However, since the entire phosphoric acid solution must be heated to a predetermined temperature, not only does it take a long time to raise the temperature, but during this time the composition of the etching solution changes due to evaporation from the surface of the solution. It has disadvantages such as the change in temperature and the difficulty of etching at a constant speed.
（考案の目的）
本考案の目的はこれらの欠点を解決するため、
容器中央部に設けた被加熱体に容器外周に設けた
高周波誘導コイルによる電磁誘導作用によつて渦
電流を流し、これによつて被加熱体を加熱し、被
加熱体に近接して支持された基板周囲のエツチン
グ液を局部的に昇温させて基板の加工をする装置
を提供することにある。以下本考案を実施例につ
いて詳細に説明する。(Purpose of the invention) The purpose of the invention is to solve these drawbacks.
An eddy current is passed through the object to be heated, which is provided in the center of the container, by the electromagnetic induction effect of a high-frequency induction coil provided on the outer periphery of the container, thereby heating the object to be heated. An object of the present invention is to provide an apparatus for processing a substrate by locally raising the temperature of an etching solution around the substrate. The present invention will be described in detail below with reference to embodiments.
（考案の構成）
第２図は本考案の一実施例の構成を示す説明図
で、第１図と同一部分には同一記号が付してあ
る。４は容器３を載置する台、５は容器３の外周
に設けられた高周波誘導コイルで400kHz〜
13.56MHzの高周波電圧を印加する、６は被加熱
体で所望の加熱温度にするために必要な渦電流損
をもつた部材例えばグラフアイトに耐薬品性を付
与するためフツ素樹脂の被覆を施してある。７は
この被加熱体に支持された加工用基板である。こ
のように構成することにより、耐薬品性の石英で
作られた容器３にエツチング液２を満たし、高周
波誘導コイル５に図示しない電源から400kHz〜
13.56MHzの高周波電圧を印加すれば、中央部に
立設されているグラフアイト等の被加熱体６は電
磁誘導作用によつて生ずるいわゆる渦電流損によ
つて加熱される。従つて、この被加熱体６の外周
近傍のエツチング液は局部的に極めて速い立ち上
りで温度が上昇しかつ自然に対流するから、被加
熱体６に近接して支持されている基板７はこれに
接するエツチング液が絶えず更新されるので、極
めて効果的にエツチングが行なわれることにな
る。(Structure of the invention) FIG. 2 is an explanatory diagram showing the structure of an embodiment of the invention, and the same parts as in FIG. 1 are given the same symbols. 4 is a table on which the container 3 is placed, and 5 is a high frequency induction coil installed around the outer periphery of the container 3.
A high frequency voltage of 13.56 MHz is applied, and 6 is a member to be heated, which has the necessary eddy current loss to achieve the desired heating temperature. For example, graphite is coated with fluororesin to give chemical resistance. There is. 7 is a processing substrate supported by this heated object. With this configuration, the container 3 made of chemical-resistant quartz is filled with the etching solution 2, and the high frequency induction coil 5 is connected to the high frequency induction coil 5 from a power supply (not shown) at 400 kHz to
When a high frequency voltage of 13.56 MHz is applied, the object 6 to be heated, such as graphite, which is placed upright in the center, is heated by so-called eddy current loss caused by electromagnetic induction. Therefore, the temperature of the etching liquid near the outer periphery of the object to be heated 6 locally rises extremely rapidly and convection occurs naturally, so that the substrate 7 supported close to the object to be heated 6 is exposed to this temperature. Since the contacting etching liquid is constantly renewed, etching is very effective.
なお、本実施例では容器３の材質が石英であつ
たが、渦電流損の少ない材質即ちフツ素樹脂であ
つてもよく、また、被加熱体６はグラフアイトの
代りにステンレス等の適宣の渦流損を有する材質
のものであつてもよい。その他、基板としてはシ
リコンのほかに、化合物半導体、アルミナなどが
用いられる。 In this embodiment, the material of the container 3 was quartz, but it may also be made of a material with low eddy current loss, that is, fluororesin, and the heated body 6 may be made of a suitable material such as stainless steel instead of graphite. The material may be made of a material having an eddy current loss of . In addition to silicon, compound semiconductors, alumina, and the like are also used for the substrate.
（考案の効果）
以上説明したように、本考案はエツチング液全
体を加熱する代りに局部加熱方式を採用したの
で、液温が適温にまで上昇してエツチングできる
状態にまで立上る時間が速いだけでなく、局部加
熱により基板に接する近傍のエツチング液が絶え
ず循環して基板の表面をエツチングすることにな
るので、エツチングを極めて安定に行なうことが
できるほかに、消費電力も少なくて済むなどの効
果がある。(Effects of the invention) As explained above, the present invention uses a local heating method instead of heating the entire etching solution, so the time it takes for the solution to rise to an appropriate temperature and ready for etching is faster. Instead, the etching solution in the vicinity of the substrate is constantly circulated due to local heating and etches the surface of the substrate, which not only allows for extremely stable etching but also reduces power consumption. There is.
第１図は従来の装置を示す簡略断面図、第２図
は本考案の実施例を示す簡略断面図である。
１……ホツトプレート、２……エツチング液、
３……容器、４……載置台、５……高周波誘導コ
イル、６……被加熱体、７……基板。
FIG. 1 is a simplified sectional view showing a conventional device, and FIG. 2 is a simplified sectional view showing an embodiment of the present invention. 1...Hot plate, 2...Etching liquid,
3... Container, 4... Mounting table, 5... High frequency induction coil, 6... Heated object, 7... Substrate.
Claims (1)
た容器にエツチング液を満たし、この容器内中央
部に定められた渦電流損を有する部材で作られか
つ耐薬品性材料で被覆された被加熱体を立設する
とともに、この被加熱体外周に近接して被加工基
板を支持し、かつ前記容器外周に高周波誘導コイ
ルを設けたことを特徴とする基板の加工装置。 A container made of a material that is resistant to chemicals and has low eddy current loss is filled with etching solution, and a cover made of a material that has a specified eddy current loss and coated with a chemically resistant material is placed in the center of the container. 1. A substrate processing apparatus, characterized in that a heating body is provided upright, a substrate to be processed is supported close to the outer periphery of the heated body, and a high frequency induction coil is provided on the outer periphery of the container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19399882U JPS59100856U (en) | 1982-12-23 | 1982-12-23 | Substrate processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19399882U JPS59100856U (en) | 1982-12-23 | 1982-12-23 | Substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59100856U JPS59100856U (en) | 1984-07-07 |
| JPS6217484Y2 true JPS6217484Y2 (en) | 1987-05-06 |
Family
ID=30417111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19399882U Granted JPS59100856U (en) | 1982-12-23 | 1982-12-23 | Substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59100856U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2740670B2 (en) * | 1989-03-01 | 1998-04-15 | 日本電信電話株式会社 | Etching method |
-
1982
- 1982-12-23 JP JP19399882U patent/JPS59100856U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59100856U (en) | 1984-07-07 |
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