JPS62173789A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS62173789A JPS62173789A JP1652586A JP1652586A JPS62173789A JP S62173789 A JPS62173789 A JP S62173789A JP 1652586 A JP1652586 A JP 1652586A JP 1652586 A JP1652586 A JP 1652586A JP S62173789 A JPS62173789 A JP S62173789A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- laser
- semiconductor laser
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 14
- 238000003776 cleavage reaction Methods 0.000 claims description 8
- 230000007017 scission Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241000019011 Tasa Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体レーザ、特に超高速動作可能な半導体
レーザ或いは、０ＥＩＣに搭載する半導体レーザの製造
方法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a method for manufacturing a semiconductor laser, particularly a semiconductor laser capable of ultra-high-speed operation or a semiconductor laser mounted on an 0EIC.
（従来技術とその問題点）
近年、光通信技術の進歩とともに半導体光デバイスの高
性能化が強く求められており、１０ＧＨ，以上の高速で
動作が可能な半導体レーザ或いは、高速、低電力消費の
レーザと電子回路とをモノリシックに集積した０ＥＩＣ
の実現が望まれている。このデバイスを実現するには、
レーザの短共振器化或いは電子回路のレイアウトを左右
しないレーザの共振器形成が必要となる。そのためには
、ウェハーのへき開を用いない共振器形成が必要であり
、その一方法としてマイクロクリープ法が知られている
。従来のマイクロクリープ法としては、レーザ層側から
絶縁膜或いは電極をマスクとしてエツチングし、レーザ
層下の基板の一部を除去して突出部を形成し、これを超
音波振動によりへき関する方法が知られていた（ Ａｐ
ｐｌ、 Ｐｈｙｓ、 Ｌｅｔｔ、 ４０２８９（１９８
２）参照）、シかしこの方法で良好なへき開面を得るに
はサイドエツチングのエツジをなめらかにする必要があ
るが、サイドエツチングは本来制御性、再現性に欠け、
また突出部の形成をモニターできないから、この方法は
歩留まり、再現性が悪いといった欠点を有していた。(Prior art and its problems) In recent years, with the advancement of optical communication technology, there has been a strong demand for higher performance of semiconductor optical devices. 0EIC monolithically integrated laser and electronic circuit
It is hoped that this will be realized. To realize this device,
It is necessary to shorten the laser cavity or form a laser cavity that does not affect the layout of the electronic circuit. For this purpose, it is necessary to form a resonator without using wafer cleavage, and a microcreep method is known as one method thereof. The conventional microcreep method involves etching from the laser layer side using an insulating film or electrode as a mask, removing a part of the substrate under the laser layer to form a protrusion, and separating this using ultrasonic vibration. It was known (Ap
pl, Phys, Lett, 40289 (198
However, in order to obtain a good cleavage surface using this method, it is necessary to smooth the edges of side etching, but side etching inherently lacks controllability and reproducibility.
Furthermore, since the formation of protrusions cannot be monitored, this method has drawbacks such as poor yield and reproducibility.
そこで、本発明の目的は、上述の欠点を除去し、超高速
動作可能な半導体レーザ、或いは高速、低消費電力の０
ＥＩＣを歩留まり良く製造する方法を提供することにあ
る。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to eliminate the above-mentioned drawbacks and provide a semiconductor laser capable of ultra-high-speed operation, or a high-speed, low-power semiconductor laser.
An object of the present invention is to provide a method for manufacturing an EIC with high yield.
（問題点を解決するための手段）
前述の問題点を解決するために本発明が提供する手段は
、基板と隣接する石が前記基板の混晶組成とは異なる半
導体レーザの製造方法であって、前記基板まで達するメ
サを形成する工程と、少なくとも前記メサ下部の前記基
板の一部をその基板の裏面からエツチングして除去し前
記基板から突出している突出部を形成する工程と、前記
突出部を超音波振動により除去してへき開面を形成する
工程とを含むことを特徴とする。(Means for Solving the Problems) Means provided by the present invention to solve the above-mentioned problems is a method for manufacturing a semiconductor laser in which a substrate and a stone adjacent to the substrate have a mixed crystal composition different from that of the substrate. forming a mesa that reaches the substrate; etching and removing at least a portion of the substrate below the mesa from the back surface of the substrate to form a protrusion protruding from the substrate; and forming a protrusion protruding from the substrate; The method is characterized in that it includes a step of removing the cleavage plane by ultrasonic vibration to form a cleavage plane.
（実施例） 次に図面を参照して本発明の実施例を詳細に説明する。(Example) Next, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は一実施例の半導体レーザの製造方法を説明する
ための工程図である。本実施例では、半絶縁性ＩｎＰの
基板１上にキャリア濃度がｌＸｌ０”ｃｍ−”のｎ型Ｉ
ｎｏ、ａｙＧａｏ、＋ｓＡ！３ｏ、ｚ＊Ｐｏ、ｙ＋によ
りなる電極コンタクト層２を形成し、その上に埋め込み
型構造のレーザ層を形成したウェハをＳｉＯｘをマスク
としてｐ型Ｉｎｏ、５ｙＧａｏ、 １ｊＡ９１ｆｆｉｔ
ｐＨ，７１よりなるキャップ暦３とアンドープＩｎｏ、
ｙｓＧａｏ、＊ｔＡＳａ、＋＋ｓＰ６．４４よりなる活
性層４をＨ！５０４ ： ＨｓＣｈ ： Ｈ＊Ｏ−３：
１：１組成のエツチング液Ｉで、ｐ型ＩｎＰ及びｎ型Ｉ
ｎＰよりなる埋め込み層５及び活性層４を狭むｐ型及び
ｎ型ＩｎＰよりなるクラッド暦６をｌｃＱ ： Ｈ，Ｐ
Ｏ４−４； １組成のエツチング液■でそれぞれの層を
選択的にメサエッチングし幅３０泗、長さ１５０−のメ
サを形成し、更に電極コンタクト層２の一部に更にマス
クを施しエツチング液Ｉで基板１が露出するまでエツチ
ングする。次にキャブ層３上にＡ工２．２極７を電極コ
ンタクト居士にＡ、Ｇ。FIG. 1 is a process diagram for explaining a method of manufacturing a semiconductor laser according to an embodiment. In this example, an n-type I with a carrier concentration of lXl0"cm-" is placed on a semi-insulating InP substrate 1.
no, ay Gao, +sA! A wafer on which an electrode contact layer 2 consisting of 3o, z*Po, and y+ was formed, and a laser layer with an embedded structure was formed thereon was used as a p-type Ino, 5yGao, and 1jA91ffit using SiOx as a mask.
Cap calendar 3 consisting of pH, 71 and undoped Ino,
The active layer 4 consisting of ysGao, *tASa, ++sP6.44 is heated to H! 504: HsCh: H*O-3:
With etching solution I of 1:1 composition, p-type InP and n-type I
A buried layer 5 made of nP and a cladding layer 6 made of p-type and n-type InP that narrows the active layer 4 are lcQ: H, P
O4-4: Selectively mesa-etch each layer with an etching solution (1) of one composition to form a mesa with a width of 30 cm and a length of 150 cm, and further mask a part of the electrode contact layer 2 and apply the etching solution. Etch with I until the substrate 1 is exposed. Next, connect the A-type 2.2 poles 7 to the electrode contacts A and G on the cab layer 3.
電極８をリフトオフ法により形成する（第１図（ａ））
、次にレーザ層側をフォトレジストによリガラス板には
りつけ基板１の裏面にＳｉｎ、マスクを施し、裏面より
エツチング液■により基板１のみを選択的にエツチング
し、レーザ層の両側を５０１５ＴＩ突出きせる（第１ｆ
ｆｌ（ｂ））。こうして形成した突出部を超音波振動に
よりへき関し、レーザ共振器面を形成すると共振器長５
０ＰｒｒｒＩのレーザが製造できる。（第１図（Ｃ））
。Electrode 8 is formed by lift-off method (Fig. 1(a))
Next, the laser layer side is attached to a glass plate using a photoresist, a Sin mask is applied to the back side of the substrate 1, and only the substrate 1 is selectively etched from the back side using an etching solution (2) to make 5015TI protrude on both sides of the laser layer. (1st f
fl(b)). When the protrusions thus formed are separated by ultrasonic vibration to form a laser resonator surface, the resonator length is 5.
0PrrrI laser can be manufactured. (Figure 1 (C))
.
本実施例では基板１の裏面からエツチングしているから
、レーザ層の突出部根元９を滑らかにでき、また基板１
のエツチングにおいて電極コンタクトＪ！５２がエツチ
ングストップ居となっているため、レーザ層がエツチン
グされることもないので、歩留まり良く良好なへき開面
が形成できる。In this embodiment, since etching is performed from the back surface of the substrate 1, the base 9 of the protruding portion of the laser layer can be made smooth, and the etching is performed from the back surface of the substrate 1.
In the etching of the electrode contact J! Since 52 serves as an etching stop, the laser layer is not etched, so that a good cleavage plane can be formed with a high yield.
また本実施例ではへき開工程がレーザ製造工程の最後の
工程となっており、またへき開面を形成するためのレー
ザ層の突出部形成を基板１の裏面より行なうから、電子
回路をレーザとモノリシック集積する０ＥＩＣ製造工程
にも、そのまま適用することができる。Furthermore, in this embodiment, the cleavage step is the last step in the laser manufacturing process, and since the protrusion of the laser layer for forming the cleavage plane is formed from the back surface of the substrate 1, the electronic circuit can be monolithically integrated with the laser. It can also be applied as is to the 0EIC manufacturing process.
なお、レーザＷｔ）告【十ｍ ＩＦ２（ａ ）〜（ｃ
’）に７Ｋした構造に限らず、各種構造のレーザに本発
明は適用できる。In addition, the laser Wt) notification [10 m IF2 (a) ~ (c
The present invention is applicable not only to lasers having a 7K structure, but also to lasers having various structures.
（発明の効果）
以上説明したように本発明によれば、超高速動作が可能
な半導体レーザ、或いは高速、低１力消費の０ＥＩＣが
歩留まり良く製造できる半導体レーザの製造方法が提供
できる。(Effects of the Invention) As described above, according to the present invention, it is possible to provide a method for manufacturing a semiconductor laser capable of ultra-high-speed operation or a semiconductor laser capable of manufacturing a high-speed 0EIC with low unit power consumption at a high yield.
第１図（ａ）〜（ｃ）は本発明の一実施例を示すための
工程図である。
図において、１は基板、２は電極コンタクト層、３はキ
ャップ居、４は活性層、５は埋め込み】、６はクラッド
】、７はＡ、Ｚ、電極、８はＡ、Ｇ、’！！極、９はレ
ーザ突出部根元。FIGS. 1(a) to 1(c) are process diagrams showing one embodiment of the present invention. In the figure, 1 is the substrate, 2 is the electrode contact layer, 3 is the cap layer, 4 is the active layer, 5 is the buried], 6 is the cladding], 7 is A, Z, electrode, 8 is A, G, '! ! Pole 9 is the base of the laser protrusion.
Claims (1)
体レーザの製造方法において、前記基板まで達するメサ
を形成する工程と、少なくとも前記メサ下部の前記基板
の一部をその基板の裏面からエッチングして除去し、前
記基板から突出している突出部を形成する工程と、前記
突出部を超音波振動により除去してへき開面を形成する
工程とを含むことを特徴とする半導体レーザの製造方法
。In a method of manufacturing a semiconductor laser in which a layer adjacent to a substrate has a mixed crystal composition different from that of the substrate, the step includes forming a mesa that reaches the substrate, and etching at least a portion of the substrate below the mesa from the back surface of the substrate. A method of manufacturing a semiconductor laser, the method comprising the steps of: forming a protrusion protruding from the substrate; and removing the protrusion using ultrasonic vibration to form a cleavage plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1652586A JPS62173789A (en) | 1986-01-28 | 1986-01-28 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1652586A JPS62173789A (en) | 1986-01-28 | 1986-01-28 | Manufacture of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62173789A true JPS62173789A (en) | 1987-07-30 |
Family
ID=11918690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1652586A Pending JPS62173789A (en) | 1986-01-28 | 1986-01-28 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62173789A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03285381A (en) * | 1990-04-02 | 1991-12-16 | Sharp Corp | Manufacture of semiconductor laser element |
| JP2007103460A (en) * | 2005-09-30 | 2007-04-19 | Sanyo Electric Co Ltd | Semiconductor laser device and its manufacturing method |
-
1986
- 1986-01-28 JP JP1652586A patent/JPS62173789A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03285381A (en) * | 1990-04-02 | 1991-12-16 | Sharp Corp | Manufacture of semiconductor laser element |
| JP2007103460A (en) * | 2005-09-30 | 2007-04-19 | Sanyo Electric Co Ltd | Semiconductor laser device and its manufacturing method |
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