JPS62172691A - Thin film el device - Google Patents
Thin film el deviceInfo
- Publication number
- JPS62172691A JPS62172691A JP61013472A JP1347286A JPS62172691A JP S62172691 A JPS62172691 A JP S62172691A JP 61013472 A JP61013472 A JP 61013472A JP 1347286 A JP1347286 A JP 1347286A JP S62172691 A JPS62172691 A JP S62172691A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- layer
- transparent electrode
- thin film
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 16
- 239000010410 layer Substances 0.000 description 59
- 239000010408 film Substances 0.000 description 12
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910003452 thorium oxide Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本光明は、′ａ薄膜Ｌ素子に係り、特にｉｌ１度の向上
のための＠造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film L element, and particularly to a structure for improving illumination degree.
［従来技術およびその問題点］
輝度の面で問題が多く照明用光源としての開発を断面せ
ざるを得なかった。硫化亜鉛（ＺｎＳ）系蛍光体粉末を
用いた分散型ＥＬ素子に代わって、薄膜蛍光体層を用い
た薄膜型ＥＬ素子が高輝度を得られることから近年注目
されてきている。[Prior art and its problems] Development as a light source for illumination had to be abandoned due to many problems in terms of brightness. In place of dispersed EL devices using zinc sulfide (ZnS)-based phosphor powder, thin-film EL devices using thin-film phosphor layers have been attracting attention in recent years because they can provide high brightness.
薄膜ＥＬ素子は、発光層が透明な薄膜で構成されていて
粒状性がないため、外部から入射する光および発光層内
部で発光した光が散乱されてハレーションやにじみを生
じることがなく、鮮明でコントラストが高いことから、
車両への搭載用、コンピュータ端末等の表示装置あるい
は照明用として脚光を浴びている。Thin-film EL elements have a light-emitting layer that is made of a transparent thin film and has no graininess, so light incident from the outside and light emitted inside the light-emitting layer are not scattered and cause halation or smearing, resulting in clear images. Due to its high contrast,
It is in the spotlight for use in vehicles, display devices for computer terminals, and lighting.
従来薄膜Ｅｌ素子の基本構造は、第３図に示す如く透光
性の基板１上に酸化錫（ＳｎＯ２）層等からなる透明電
極２と第１の誘電体層３と、ＺｎＳ：Ｍｎ薄膜からなる
発光層４と、第２の誘電体層５と、アルミニウム（Ａ」
）層等からなる背面電極６とが順次積層ゼしめられた２
申誘電体構造をなしている。The basic structure of a conventional thin film El element is as shown in FIG. The light emitting layer 4, the second dielectric layer 5, and the aluminum (A)
) layers, etc., are sequentially laminated.
It has a dielectric structure.
そして、光光の過程は、以下に示づ如くである。The process of light is as shown below.
前記透明電極と前記背面電極との間に電圧を印加すると
、発光層内に誘起された電界によって界面単位にトラッ
プされていた電子が引き出されて加速され充分なエネル
ギーを得、この電子がＭｎ（発光中心）の軌道電子に衝
突しこれを励起する。When a voltage is applied between the transparent electrode and the back electrode, the electric field induced in the light-emitting layer pulls out the electrons trapped at each interface and accelerates them to obtain sufficient energy, and these electrons become Mn( It collides with the orbital electrons of the luminescent center) and excites them.
そしてこの励起された発光中心が基底状態に戻る際に発
光を行なう。Then, when this excited luminescent center returns to the ground state, it emits light.
かかる＠造の簿膜ＥＬ素子においては、発光層から発生
される光を効率良く外部に取り出すべく、第１の誘電体
層の屈折率と膜厚を制御する方法（特公昭５８−５５６
３５＞等、さまざまな工夫がなされている。In such a film EL device manufactured by @, a method of controlling the refractive index and film thickness of the first dielectric layer (Japanese Patent Publication No. 58-556
35>, etc., various efforts have been made.
ところで、このような簿膜ＥＬ素子の等価回路は第１の
誘電体層３、発光層４、第２の誘電体層５によって構成
される３つのコンデンサの直列接続体として表わずこと
かできる。従って、第１の誘電体層および第２の誘電体
層の比誘電率ε「１゜Ｃｒ２が、発光層の比誘電体率ε
１に比べて充分に大きい（εｒ１．εｒ２）＋８．１１
）とき、これらの電気容Ｆｉ Ｃｒｌ、 Ｃｒ２． Ｃ
ｊはＣｒ１． Ｃｒ２＞ Ｃｊとなるため、この素子へ
の外部からの印加電圧のほとんどが発光層にかかること
になり、低い駆動電圧で高輝度を得ることができる。By the way, the equivalent circuit of such a film EL element can be expressed as a series connection of three capacitors constituted by the first dielectric layer 3, the light emitting layer 4, and the second dielectric layer 5. . Therefore, the dielectric constant ε of the first dielectric layer and the second dielectric layer is 1°Cr2, while the dielectric constant ε of the light emitting layer is
Sufficiently larger than 1 (εr1.εr2)+8.11
), these electric capacitances Fi Crl, Cr2. C
j is Cr1. Since Cr2>Cj, most of the externally applied voltage to this element is applied to the light emitting layer, and high brightness can be obtained with a low driving voltage.
駆ＩＪＩ電圧の低下のためには、第１のｙ、電体層どし
て誘電率の大きなものを用いるのが好ましいが、誘電率
の大きなものを用いると、透明電極との界面での反射率
が大きくなり、発光層からの光を効率良く取り出すこと
ができないという矛盾があり、低い駆動電圧で高輝度を
（ｑることは困難であった。In order to reduce the driving IJI voltage, it is preferable to use a material with a large dielectric constant as the first y, electric layer, etc. However, if a material with a large dielectric constant is used, reflections at the interface with the transparent electrode may occur. There is a contradiction in that the ratio becomes large and light cannot be extracted efficiently from the light emitting layer, and it is difficult to achieve high brightness with a low driving voltage.
本発明は、前記実情に鑑みてなされたもので、発光層か
らの光を効率良く取り出し、高輝度を得ることのできる
薄膜ＥＬ素子を提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a thin film EL element that can efficiently extract light from a light emitting layer and obtain high brightness.
〔問題点を解決するための手段）
そこで本発明では、基板上に透明電極と、第１の誘電体
層と、発光層と、第２の誘電体層と、背面電極とを順次
積層せしめた薄膜ＥＬ素子において、透明電極と第１の
誘電体層との間に、両者の中間の屈折率を有する第３の
誘電体層を介在せしめるようにしている。[Means for Solving the Problems] Therefore, in the present invention, a transparent electrode, a first dielectric layer, a light emitting layer, a second dielectric layer, and a back electrode are sequentially laminated on a substrate. In the thin film EL element, a third dielectric layer having a refractive index intermediate between the transparent electrode and the first dielectric layer is interposed between the transparent electrode and the first dielectric layer.
かかる構成によれば、第３の誘電体層を介在せしめるこ
とにより第１の誘電体層のもつ誘電率を低下せしめるこ
となく第１の誘電体層と透明電極との界面における屈折
率の差を緩和し、反射を低減することにより発光層から
の光を効率良くとり出すことができる。According to this configuration, by interposing the third dielectric layer, the difference in refractive index at the interface between the first dielectric layer and the transparent electrode can be reduced without reducing the dielectric constant of the first dielectric layer. By relaxing and reducing reflection, light can be efficiently extracted from the light emitting layer.
例えば、いま透明電極の屈折率をｎｏ＝２、第１の誘電
体層を屈折率ｎ２＝４とし、これらの間にこれらの中間
の屈折率ｎ１＝３を有する第３のＦ：、電体層を介在さ
せたとき、フレネル（Ｆｒｅｓｎｅｌ ）の法則より、
透明電極と第３の誘電体層との間の＝２％
第３の誘電体層と第１の誘電体層との間の反射−４％
となって全体の反射率は６％となり、透過率は９４％と
なる。For example, let us assume that the refractive index of the transparent electrode is no=2, the first dielectric layer has a refractive index n2=4, and a third F:, an electric material having an intermediate refractive index n1=3 is formed between them. When a layer is interposed, according to Fresnel's law,
The reflection between the transparent electrode and the third dielectric layer = 2%, the reflection between the third dielectric layer and the first dielectric layer - 4%, and the total reflectance is 6%. The rate is 94%.
これに対し、第３の誘電体層を介在さゼなかったとき、
透明電極と第１の誘電体層との反射率は、か１１％
となり、透過率は８９％となる。On the other hand, when the third dielectric layer is not interposed,
The reflectance between the transparent electrode and the first dielectric layer is approximately 11%, and the transmittance is 89%.
これら透過率の比較からも第３の誘電体層を介在せしめ
ることにより、透過率が大幅に改善されていることがわ
かる。A comparison of these transmittances also shows that the interposition of the third dielectric layer significantly improves the transmittance.
（実施例）
以下、本発明の実施例について図面を参照しつつ詳細に
説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は、本発明のｎｂ膜ＥＬ素子を示す図である。FIG. 1 is a diagram showing an nb film EL device of the present invention.
この薄ｒｆ５ＥＬ素子はｊνさ１ ｒｔｒｍの透光性の
ガラス基板１１上にＰＩＡ厚０．３．ｃｚｙｎの酸化錫
（ＳｎＯ２）層等からなる透明型＃Ａ１２、膜厚０．１
μｍの酸化イツ・トリウム（Ｙ２Ｏ２）層からなる第３
の誘電体層１３、膜厚０．４μｍの五酸化タンクル（Ｔ
ａ２０５）層からなる第１の誘電体層１４、膜厚Ｏ１５
μｍの硫化亜鉛（ＺｎＳ）：マンガンＭｎ層からなる発
光層１５．１１！、！厚０．５μｍの五酸化タンタル（
Ｔａ２０５）層からなる第２の誘電体層１６、膜厚０．
５μｍのアルミニウム；Ｗ膜からなる背面電極１７とが
順次積層セしめられて構成されている。This thin rf5EL element is mounted on a transparent glass substrate 11 with a length of 1 rtrm and a PIA thickness of 0.3. Transparent type #A12 consisting of czyn tin oxide (SnO2) layer, etc., film thickness 0.1
The third layer consists of μm thick thorium oxide (Y2O2) layer.
The dielectric layer 13 is made of tank pentoxide (T) with a film thickness of 0.4 μm.
a205) first dielectric layer 14, film thickness O15
μm zinc sulfide (ZnS): Luminescent layer consisting of a manganese Mn layer 15.11! ,! Tantalum pentoxide with a thickness of 0.5 μm (
The second dielectric layer 16 is made of a Ta205) layer with a film thickness of 0.
A back electrode 17 made of a 5 μm thick aluminum film and a W film are sequentially laminated and set.
この薄膜ＥＬ素子は、透明電極と背面電極との間に交’
ａ 電界を加えることによって駆動されるが、その電圧
−輝度特性曲線ａを従来例の第３の誘電体層を有しない
＠造の薄１！ＥＬ素子の電圧−輝度特性曲線すと共に第
２図に示す。これらの比較からも、本発明の薄膜ＥＬ素
子は、従来例の薄膜ＥＬｉ子に比べて、大幅にｉｇ！！
度が向上していることがわかる。（ここでたて軸は輝度
、横軸は印加電圧（Ｖ）を示す、、）
なお、実施例では第３の誘電体層を一層＠造としたが、
多層構造とし、徐々に屈折率の変化するような構造とし
てもよい。This thin film EL element has an intersection between a transparent electrode and a back electrode.
a It is driven by applying an electric field, but its voltage-brightness characteristic curve a is similar to that of the conventional example, which does not have the third dielectric layer. FIG. 2 shows the voltage-luminance characteristic curve of the EL element. From these comparisons, the thin film EL device of the present invention has significantly higher ig! than the conventional thin film EL device. !
It can be seen that the level has improved. (Here, the vertical axis shows the brightness, and the horizontal axis shows the applied voltage (V).) In the example, the third dielectric layer was made of a single layer, but
It may also be a multilayer structure in which the refractive index gradually changes.
また、各層の構成材料としては、実施例に限定されるこ
となく、適宜変更可能である。加えて、この薄膜ＥＬ素
子は、表示装置以外に照明用として、光記録媒体への信
号の書き込み、読み出し、消去用の光源としても使用可
能である。Further, the constituent materials of each layer are not limited to the examples and can be changed as appropriate. In addition, in addition to display devices, this thin film EL element can also be used for illumination and as a light source for writing, reading, and erasing signals on optical recording media.
（効 果）
以上説明したきたように、本発明によれば、透明電極と
第１の誘電体層との間に、これらの中間の屈折率を有す
る第３の誘電体層を介在せしめるようにしているため、
発光層からの光を効率良く、外部に取り出すことができ
、高輝度のＷ膜ＥＬ素子を提供することが可能となる。(Effects) As explained above, according to the present invention, a third dielectric layer having a refractive index intermediate between the transparent electrode and the first dielectric layer is interposed between the transparent electrode and the first dielectric layer. Because
Light from the light-emitting layer can be efficiently extracted to the outside, making it possible to provide a high-luminance W film EL element.
第１図は、本発明実施例の１ＷＩＩＷＥＬ素了を示す図
、第２図は、同簿膜ＥＬ素子と従来の薄膜ＥＬ素子との
輝度−電圧特性の比較図、第３図は、従来例の薄膜ＥＬ
素子を示す図である。
１・・・基板、２・・・透明電極、３・・・第１の誘電
体層、４・・・発光層、５・・・第２の誘電体層、６・
・・背面τ、極、１１・・・ガラス基板、１２・・・透
明電極、１３・・・第３の誘電体層、１４・・・第１の
誘電体層、１５・・・発光層、１６・・・第２の誘電体
層、１７・・・背面電極。
（−一・１．ム、二°、１
電圧 （■）
第２図FIG. 1 is a diagram showing the completion of 1WIIWEL according to an embodiment of the present invention, FIG. 2 is a comparison diagram of brightness-voltage characteristics between the same film EL element and a conventional thin film EL element, and FIG. 3 is a diagram of a conventional example. thin film EL
It is a figure showing an element. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Transparent electrode, 3... First dielectric layer, 4... Light emitting layer, 5... Second dielectric layer, 6...
...Back surface τ, pole, 11...Glass substrate, 12...Transparent electrode, 13...Third dielectric layer, 14...First dielectric layer, 15...Light emitting layer, 16... Second dielectric layer, 17... Back electrode. (-1・1.mu, 2°, 1 voltage (■) Fig. 2
Claims (1)
めると共に、更に透明電極側に、 該第１の誘電体層と透明電極との間の中間の屈折率を有
する第２の誘電体層を介在せしめるようにしたことを特
徴とする薄膜ＥＬ素子。[Claims] A first dielectric layer is interposed between the transparent electrode and the light-emitting layer, and a refractive index intermediate between the first dielectric layer and the transparent electrode is further provided on the transparent electrode side. 1. A thin film EL device characterized by interposing a second dielectric layer having:
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61013472A JPH0766856B2 (en) | 1986-01-24 | 1986-01-24 | Thin film EL device |
| US06/947,782 US4794302A (en) | 1986-01-08 | 1986-12-30 | Thin film el device and method of manufacturing the same |
| EP87100094A EP0229627B1 (en) | 1986-01-08 | 1987-01-07 | Thin film electroluminescent device and method of manufacturing the same |
| DE3751206T DE3751206T2 (en) | 1986-01-08 | 1987-01-07 | Thin film electroluminescent device and method of manufacturing the same. |
| DE8787100094T DE3777664D1 (en) | 1986-01-08 | 1987-01-07 | THICK LAYER ELECTROLUMINESCENT DEVICE AND METHOD FOR PRODUCING THE SAME. |
| EP90125792A EP0421494B1 (en) | 1986-01-08 | 1987-01-07 | A thin film electroluminescent (EL) device and method of manufacturing the same |
| KR1019870000081A KR0132785B1 (en) | 1986-01-08 | 1987-01-08 | Thin film el device and method of manufacturing the same |
| FI870066A FI83013C (en) | 1986-01-08 | 1987-01-08 | Thin film type electroluminescence device and method of counting its front |
| US07/269,930 US5006365A (en) | 1986-01-08 | 1988-10-28 | Method of manufacturing a thin film EL device by multisource deposition method |
| US07/648,111 US5133988A (en) | 1986-01-08 | 1991-01-31 | Method of manufacturing thin film el device |
| KR1019950034085A KR970000428B1 (en) | 1986-01-08 | 1995-10-02 | Thin film el device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61013472A JPH0766856B2 (en) | 1986-01-24 | 1986-01-24 | Thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62172691A true JPS62172691A (en) | 1987-07-29 |
| JPH0766856B2 JPH0766856B2 (en) | 1995-07-19 |
Family
ID=11834073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61013472A Expired - Fee Related JPH0766856B2 (en) | 1986-01-08 | 1986-01-24 | Thin film EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766856B2 (en) |
Cited By (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396208B1 (en) | 1998-01-27 | 2002-05-28 | Nec Corporation | Organic electroluminescent device and its manufacturing process |
| WO2002080626A1 (en) * | 2001-03-29 | 2002-10-10 | Fuji Photo Film Co., Ltd. | Electroluminescence device |
| US6476550B1 (en) | 1998-03-27 | 2002-11-05 | Nec Corporation | Organic Electroluminescent device with a defraction grading and luminescent layer |
| JP2002352956A (en) * | 2001-03-23 | 2002-12-06 | Mitsubishi Chemicals Corp | Thin-film light emitting substance and manufacturing method therefor |
| JP2004079422A (en) * | 2002-08-21 | 2004-03-11 | Tdk Corp | Organic el element |
| US6734624B2 (en) | 1999-12-08 | 2004-05-11 | Nec Corporation | Organic electro-luminescence device and method for fabricating same |
| US6771018B2 (en) | 2001-07-30 | 2004-08-03 | Samsung Sdi Co., Ltd. | Light-emitting device and display device employing electroluminescence with no light leakage and improved light extraction efficiency |
| US6787796B2 (en) | 2002-02-27 | 2004-09-07 | Samsung Sdi Co., Ltd. | Organic electroluminescent display device and method of manufacturing the same |
| EP1476002A2 (en) | 2003-05-08 | 2004-11-10 | Samsung SDI Co., Ltd. | Method of manufacturing a substrate for organic electroluminescent device |
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| LAPS | Cancellation because of no payment of annual fees |