JPS62171170A - Thin film solar cell - Google Patents
Thin film solar cellInfo
- Publication number
- JPS62171170A JPS62171170A JP61012919A JP1291986A JPS62171170A JP S62171170 A JPS62171170 A JP S62171170A JP 61012919 A JP61012919 A JP 61012919A JP 1291986 A JP1291986 A JP 1291986A JP S62171170 A JPS62171170 A JP S62171170A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- solar cell
- band width
- forbidden band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000000654 additive Substances 0.000 claims description 9
- 230000000996 additive effect Effects 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 238000005036 potential barrier Methods 0.000 abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は非晶質膜及び微結晶混合質膜を備えた薄膜太陽
電池に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a thin film solar cell comprising an amorphous film and a microcrystalline mixed film.
（発明の技術的背景とその問題点）
近年、非晶質ソリコン等を用いた薄膜太陽電池の開発か
盛んに行なわれているが、これら薄膜太陽電池の光電変
換効率の向上が重要な課題になっている。(Technical background of the invention and its problems) In recent years, there has been active development of thin film solar cells using amorphous silicon, etc., but improving the photoelectric conversion efficiency of these thin film solar cells has become an important issue. It has become.
従来より、薄膜太陽電池の光電変換効率を向上させる有
力な手段として、光の入射側の不純物添加層での光の損
失を少なくするために、不純物部ｔｍＨに禁制帯幅の広
い非晶質半導体（ａ−ＳｉｘＣ＋−ｘ：Ｈ等）を用いた
り、可視光領域の光の吸収係数の小さな微結晶混合質膜
を用いる方法等が提案され、効果を上げている。Conventionally, as an effective means to improve the photoelectric conversion efficiency of thin-film solar cells, an amorphous semiconductor with a wide forbidden band width has been used in the impurity region tmH in order to reduce the loss of light in the impurity-doped layer on the light incident side. (a-SixC+-x:H, etc.) or a method using a microcrystalline mixed film with a small absorption coefficient for light in the visible light region has been proposed and has been effective.
ａ−３ｉｘ（ｇ−ｘ ： Ｉ−（膜をｐ層に用いた場合
、禁制帯幅の制御が比較的容易であることと、更に、禁
制帯幅がｉ層の禁制帯幅よりも広いため、ｉ層のｐ−ｉ
界面近傍で生成された自由電子がｐ層へ拡散するのを防
ぐ障壁の役割もなしており、キャリヤの巣板効率の向上
にも寄与していること等の長所があることがら光電変換
効率向上のための手法として主流をなしている。a-3ix (g-x: I- , p-i of i layer
It also acts as a barrier to prevent free electrons generated near the interface from diffusing into the p-layer, and it also contributes to improving carrier nesting plate efficiency, which improves photoelectric conversion efficiency. It is the mainstream method for
一方、微結晶混合質膜はａ−Ｓｉｘ（ｇ−ｘ ： ＩＩ
膜の場合と同様に、入射光側添加層での光の損失を軽減
できると共に、太陽電池の内部電位を大幅に増加させる
ため、光電変換効率の向上には大きな効果がある。しか
し、ガラス／透明導電膜／ｐｉｎ／裏面電極溝造の太陽
電池のｐ層に用いる場合、微結晶混合質膜は高いＲＦ電
力を投入して形成するために、プラズマのダメージによ
り透明導電膜の特性が損われると共に、ｐ層更にｉ層へ
透明導電膜の組成元素が混入し、期待されるような効果
は得られなかった。ステンレス基板を用いたセルでは入
射光側添加層に用いた例があり、大きな効果が得られて
いる。前述のガラス基板を用いたセルにおいても、ｐ層
を非晶質膜と微結晶混合質膜の２層で形成することによ
り透明導電膜へのダメージをなくし、微結晶混合質膜の
特性を生かしたセルができることが報告されており、薄
膜太陽電池の光電変換効率を向上させる手法として微結
晶混合質膜の応用の拡大が大いに期待できる。On the other hand, the microcrystalline mixed film has a-Six (g-x: II
As in the case of a film, it is possible to reduce the loss of light in the additive layer on the incident light side, and it also significantly increases the internal potential of the solar cell, which has a great effect on improving photoelectric conversion efficiency. However, when used in the p layer of a solar cell with a glass/transparent conductive film/pin/back electrode groove structure, the microcrystalline mixed film is formed by applying high RF power, so the transparent conductive film may be damaged by plasma. In addition to the properties being impaired, the constituent elements of the transparent conductive film were mixed into the p-layer and further into the i-layer, and the expected effect could not be obtained. In cells using stainless steel substrates, there are examples where it is used as an additive layer on the incident light side, and great effects have been obtained. Even in the cell using the glass substrate mentioned above, by forming the p-layer with two layers, an amorphous film and a microcrystalline mixed film, damage to the transparent conductive film can be eliminated and the characteristics of the microcrystalline mixed film can be utilized. It has been reported that microcrystalline mixed films can be used to improve the photoelectric conversion efficiency of thin-film solar cells, and the application of microcrystalline mixed films is highly expected to expand.
微結晶混合質膜添加層の禁制帯幅は多くの場合１層の禁
制帯幅と同等らしくは狭い。従って、ａ−Ｓ ｉｘｃ
＋−Ｘ・Ｈ膜の場合のようなキャリヤの拡散を防ぐ障壁
の効果は期待できない。先に述べたように、微結晶混合
質膜を添加層に用いた場合、１層中に高い拡散電位が形
成されるため、キャリヤの拡散に因る効果は軽減されて
いるが、光電変換効率を更に向上させるためには、この
ようなキャリヤの拡散に因る効果をより軽減させること
が望まれている。In many cases, the forbidden band width of a microcrystalline mixed film-added layer is narrow and is equivalent to the forbidden band width of one layer. Therefore, a-S ixc
The effect of a barrier to prevent carrier diffusion as in the case of the +-X·H film cannot be expected. As mentioned earlier, when a microcrystalline mixed film is used as an additive layer, a high diffusion potential is formed in one layer, so the effect due to carrier diffusion is reduced, but the photoelectric conversion efficiency is In order to further improve this, it is desired to further reduce the effect caused by such carrier diffusion.
（発明の目的）
本発明は、上記問題点に鑑みてなされたもので、微結晶
混合質膜の性質と相反する性質に期待される効果を太陽
電池自体の特性を何ら損ねることなく付加し、光電変換
特性を更に向上させるようにした薄膜太陽電池を提供す
る。(Objective of the Invention) The present invention has been made in view of the above-mentioned problems, and provides an effect expected from properties that are contradictory to those of a microcrystalline mixed film without impairing the properties of the solar cell itself. A thin film solar cell with further improved photoelectric conversion characteristics is provided.
（発明の構成）
即ち、本発明は充電変換活性領域がｐｉｎ接合型構造を
有し、ｐ型またはｎ型添加層の少なくとも一方が微結晶
混合質膜からなる薄膜太陽電池において、 ｉ層の微結
晶混合質膜との界面付近の禁制帯幅が１層中心部禁制帯
幅より広いことを特徴とする薄膜太陽電池を提供する。(Structure of the Invention) That is, the present invention provides a thin film solar cell in which the charge conversion active region has a pin junction structure and at least one of the p-type or n-type additive layer is a microcrystalline mixed film. Provided is a thin film solar cell characterized in that the forbidden band width near the interface with a crystalline mixed film is wider than the forbidden band width at the center of one layer.
本発明によれば、薄膜太陽電池の光電変換活性領域のｉ
層の禁制帯幅を、微結晶混合質膜（添加層）との界面付
近を広くすることにより、 ｉ層の添加層界面付近で発
生した自由キャリヤが添加層に拡散するのを防げる。According to the present invention, i of the photoelectric conversion active region of a thin film solar cell
By widening the forbidden band width of the layer near the interface with the microcrystalline mixed film (additional layer), free carriers generated near the addition layer interface of the i-layer can be prevented from diffusing into the addition layer.
禁制帯幅の制御はａ−９ｉｘＣ＋−ｘ ： Ｈやａ−Ｓ
ｉｘＮ＋−ｘ ： Ｈ膜のような禁制帯幅の広い非晶質
材料を用い、炭素や窒素のような合金材料のシリコンに
対する組成比を変えながら被着する。被着方法は具体的
にはスパッタリング、プラズマＣＶＤ等の方法が例示さ
れろ。Forbidden band width control is a-9ixC+-x: H or a-S
ixN+-x: An amorphous material with a wide forbidden band width such as an H film is used, and the composition ratio of an alloy material such as carbon or nitrogen to silicon is varied. Specific examples of the deposition method include sputtering and plasma CVD.
添加層は通常アモルファスシリコン（ａ−９ｉ）にリン
等のＶ、ｆｆ１元素をドープしたものおよびホウ素等の
ＩＩＩ族元素をドープしたものが使用される。The additive layer is usually amorphous silicon (a-9i) doped with V and ff1 elements such as phosphorus, and doped with a group III element such as boron.
上記光電変換活性領域は通常透明電極のついたガラス基
板上に被着され、次いで背面電極としてＡＯやＡｇを付
けることにより、太陽電池を形成する。The photoelectric conversion active region is usually deposited on a glass substrate with a transparent electrode, and then AO or Ag is applied as a back electrode to form a solar cell.
（発明の実施例）
以下、図面を参照して本発明の実施例を詳細に説明する
。(Embodiments of the Invention) Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は非晶質シリコン系材料から成る薄膜太陽ＴＬ池
のエネルギー帯構造を模式的に示す。図中、（１）はフ
ェルミレベルを示し、（３）は１層のエネルギー抽構造
を示す。第１図（ａ）はｐｉｎ各層に非晶質膜を用いた
太陽電池のエネルギー帯構造で、ｐ層（２）及びｎ層（
４）に微結晶混合質膜（５，６）を用いた場合が第１図
（ｂ）である。第１図（ｂ）の場合の方が内部電圧が高
く、（ａ）の場合に比べ、キャリヤの拡散による効果は
少なくなっている。しかし、この効果を著しく減らし、
光電変換効率の向上への寄与を明確にできるようにする
には、添加層との界面、特に光の入射側の界面に、キャ
リヤの拡散を担止するための電位障壁が必要である。FIG. 1 schematically shows the energy band structure of a thin film solar TL cell made of amorphous silicon-based material. In the figure, (1) shows the Fermi level, and (3) shows the energy extraction structure of one layer. Figure 1(a) shows the energy band structure of a solar cell using an amorphous film for each pin layer, including the p layer (2) and the n layer (2).
FIG. 1(b) shows the case in which microcrystalline mixed films (5, 6) are used in 4). In the case of FIG. 1(b), the internal voltage is higher, and the effect of carrier diffusion is smaller than in the case of FIG. 1(a). However, significantly reducing this effect,
In order to make the contribution to the improvement of photoelectric conversion efficiency clear, a potential barrier is required at the interface with the additive layer, particularly at the interface on the light incident side, to prevent carrier diffusion.
このような電位障壁を本発明に基づいて形成した太陽電
池のエネルギー帯構造を示したのが第１図（Ｃ）である
。図ではｐ層（５）、ｎＪｆｆｌ（６）両界面近傍に電
位障壁を形成しているが、セルの特性や光源のスペクト
ル等により、光の入射側のみに形成しても大きな効果が
得られる。図中の破線は第１図（ｂ）と同じエネルギー
帯を示している。界面近傍のｉ層よりも禁制帯幅が広く
なっている領域（７）の幅は界面でのｉ層の禁制帯幅や
、その領域中での電位勾配の分布等によって異なり、添
加層及びｉ層の作製条件や膜質によって最適化を要する
。FIG. 1(C) shows the energy band structure of a solar cell in which such a potential barrier is formed based on the present invention. In the figure, a potential barrier is formed near both the p-layer (5) and nJffl (6) interfaces, but depending on the characteristics of the cell and the spectrum of the light source, a great effect can be obtained even if it is formed only on the light incident side. . The broken line in the figure indicates the same energy band as in FIG. 1(b). The width of the region (7) where the forbidden band width is wider than that of the i layer near the interface varies depending on the forbidden band width of the i layer at the interface, the potential gradient distribution in that region, etc. Optimization is required depending on layer production conditions and film quality.
（効果）
本発明に基づく電位障壁の形成により、キャリヤの拡散
効果による電子のｐ層への侵入及び正孔のｎ層への侵入
を防ぎ、キャリヤの消滅を著しく減）し、薄膜太陽電池
の光電変換効率を格段に向上させる。(Effect) The formation of the potential barrier based on the present invention prevents electrons from entering the p-layer and holes from entering the n-layer due to the carrier diffusion effect, significantly reducing the disappearance of carriers, and improving thin-film solar cells. Significantly improves photoelectric conversion efficiency.
第１図は各種薄膜太陽電池のエネルギー帯構造で、第１
図（ａ）は添加層に通常の非晶質シリコン膜を用いた場
合、第１図（ｂ）は添加層に微結晶混合質膜を用いた場
合、第１図（Ｃ）は本発明による禁制帯幅の広いｉ層に
よる電位障壁を設けた場合である。
図中、番号は以下の通り。
（１）・・フェルミレベル、
（２）・・・ｐ型部晶質シリコン膜エネルギー帯構造、
（３）・・・１型非晶質ンリコン膜エネルギー帯構造、
（４）・・・ｎ型非晶質ソリコン膜エネルギー帯構造、
（５）・・ｐ型機結晶混合質シリコン膜エネルギー帯構
造、
（６）・・・ｎ型機結晶混合質シリコン膜エネルギー帯
構造、
（７）・・・１層（３）よりも禁制帯幅の広い領域。Figure 1 shows the energy band structure of various thin film solar cells.
Figure 1 (a) shows the case where a normal amorphous silicon film is used as the additive layer, Figure 1 (b) shows the case where a microcrystalline mixed film is used as the additive layer, and Figure 1 (C) shows the case where the present invention is used. This is a case where a potential barrier is provided by an i-layer with a wide forbidden band width. In the figure, the numbers are as follows. (1)...Fermi level, (2)...p-type crystalline silicon film energy band structure,
(3)... Type 1 amorphous silicon film energy band structure,
(4)...n-type amorphous solicon film energy band structure,
(5)...P-type mechano-crystalline mixed silicon film energy band structure, (6)...N-type mechano-crystalline mixed silicon film energy band structure, (7)...Forbidden band than one layer (3) wide area.
Claims (1)
またはｎ型添加層の少なくとも一方が微結晶混合質膜か
らなる薄膜太陽電池において、ｉ層の微結晶混合質膜と
の界面付近の禁制帯幅がｉ層中心部禁制帯幅より広いこ
とを特徴とする薄膜太陽電池。 ２、ｉ層がａ−ＳｉｘＣ＿１−ｘ：Ｈ膜またはａ−Ｓｉ
ｘＮ＿１−ｘ：Ｈ膜である第１項記載の薄膜太陽電池。[Claims] 1. In a thin film solar cell in which the photoelectric conversion active region has a pin junction structure and at least one of the p-type or n-type additive layer is a microcrystalline mixed film, the i-layer contains a microcrystalline mixed film. 1. A thin film solar cell characterized in that the forbidden band width near the interface with a thin film is wider than the forbidden band width at the center of the i-layer. 2. The i layer is a-SixC_1-x:H film or a-Si
xN_1-x: The thin film solar cell according to item 1, which is an H film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61012919A JPS62171170A (en) | 1986-01-22 | 1986-01-22 | Thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61012919A JPS62171170A (en) | 1986-01-22 | 1986-01-22 | Thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62171170A true JPS62171170A (en) | 1987-07-28 |
Family
ID=11818743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61012919A Pending JPS62171170A (en) | 1986-01-22 | 1986-01-22 | Thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62171170A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9923307B2 (en) | 2012-11-13 | 2018-03-20 | Harting Electric Gmbh & Co. Kg | Retaining frame for retaining plug-in connector modules |
-
1986
- 1986-01-22 JP JP61012919A patent/JPS62171170A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9923307B2 (en) | 2012-11-13 | 2018-03-20 | Harting Electric Gmbh & Co. Kg | Retaining frame for retaining plug-in connector modules |
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